CN1542847A - 半导体存储器件 - Google Patents
半导体存储器件 Download PDFInfo
- Publication number
- CN1542847A CN1542847A CNA2004100318538A CN200410031853A CN1542847A CN 1542847 A CN1542847 A CN 1542847A CN A2004100318538 A CNA2004100318538 A CN A2004100318538A CN 200410031853 A CN200410031853 A CN 200410031853A CN 1542847 A CN1542847 A CN 1542847A
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Images
Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
- F16L15/00—Screw-threaded joints; Forms of screw-threads for such joints
- F16L15/006—Screw-threaded joints; Forms of screw-threads for such joints with straight threads
- F16L15/007—Screw-threaded joints; Forms of screw-threads for such joints with straight threads with more than one threaded section
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
- F16L13/00—Non-disconnectible pipe-joints, e.g. soldered, adhesive or caulked joints
- F16L13/10—Adhesive or cemented joints
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/40—Heating elements having the shape of rods or tubes
- H05B3/54—Heating elements having the shape of rods or tubes flexible
- H05B3/56—Heating cables
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP95050/2003 | 2003-03-31 | ||
JP95050/03 | 2003-03-31 | ||
JP2003095050A JP4290457B2 (ja) | 2003-03-31 | 2003-03-31 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1542847A true CN1542847A (zh) | 2004-11-03 |
CN100412985C CN100412985C (zh) | 2008-08-20 |
Family
ID=33407466
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100318538A Expired - Fee Related CN100412985C (zh) | 2003-03-31 | 2004-03-30 | 半导体存储器件 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7079413B2 (zh) |
JP (1) | JP4290457B2 (zh) |
KR (1) | KR100594927B1 (zh) |
CN (1) | CN100412985C (zh) |
TW (1) | TWI238411B (zh) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102024816A (zh) * | 2009-09-14 | 2011-04-20 | 瑞萨电子株式会社 | 半导体存储器件 |
CN102105941A (zh) * | 2008-08-01 | 2011-06-22 | 松下电器产业株式会社 | 半导体存储装置 |
CN102624364A (zh) * | 2011-01-27 | 2012-08-01 | 富士通半导体股份有限公司 | 半导体装置 |
CN103703557A (zh) * | 2011-07-29 | 2014-04-02 | 瑞萨电子株式会社 | 半导体器件及半导体器件的制造方法 |
CN105870064A (zh) * | 2011-07-29 | 2016-08-17 | 瑞萨电子株式会社 | 半导体器件 |
CN109698617A (zh) * | 2017-10-23 | 2019-04-30 | 意法半导体国际有限公司 | 用于生成正电压和负电压的电压倍增器电路 |
CN109830253A (zh) * | 2018-12-27 | 2019-05-31 | 西安紫光国芯半导体有限公司 | 用于减少本地字线驱动器漏电的电路及方法、本地字线驱动器 |
CN111798899A (zh) * | 2019-04-04 | 2020-10-20 | 华邦电子股份有限公司 | 半导体装置 |
Families Citing this family (75)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2005119763A1 (ja) * | 2004-06-04 | 2005-12-15 | Nec Corporation | 半導体装置およびその製造方法 |
JP4795653B2 (ja) * | 2004-06-15 | 2011-10-19 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
JP2006040495A (ja) * | 2004-07-30 | 2006-02-09 | Renesas Technology Corp | 半導体集積回路装置 |
JP4553185B2 (ja) * | 2004-09-15 | 2010-09-29 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置 |
FR2878068A1 (fr) * | 2004-11-15 | 2006-05-19 | St Microelectronics Sa | Memoire a cellule de memorisation polarisee par groupe |
JP4851711B2 (ja) * | 2004-12-10 | 2012-01-11 | テキサス インスツルメンツ インコーポレイテツド | アクティブモードの間減少した漏洩電流を有するスタティックランダムアクセスメモリ及びその動作方法 |
US7217978B2 (en) * | 2005-01-19 | 2007-05-15 | International Business Machines Corporation | SRAM memories and microprocessors having logic portions implemented in high-performance silicon substrates and SRAM array portions having field effect transistors with linked bodies and method for making same |
US20060227594A1 (en) * | 2005-03-30 | 2006-10-12 | National Sun Yat-Sen University | Memory unit using dynamic threshold voltage wordline transistors |
US7274072B2 (en) * | 2005-04-15 | 2007-09-25 | International Business Machines Corporation | Hybrid bulk-SOI 6T-SRAM cell for improved cell stability and performance |
US7242626B2 (en) * | 2005-05-06 | 2007-07-10 | Freescale Semiconductor, Inc. | Method and apparatus for low voltage write in a static random access memory |
JP4912016B2 (ja) | 2005-05-23 | 2012-04-04 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
WO2007063988A1 (ja) * | 2005-12-02 | 2007-06-07 | Nec Corporation | 半導体装置およびその製造方法 |
JP2007234073A (ja) * | 2006-02-27 | 2007-09-13 | Fujitsu Ltd | 半導体記憶装置 |
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US7446352B2 (en) | 2006-03-09 | 2008-11-04 | Tela Innovations, Inc. | Dynamic array architecture |
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US9230910B2 (en) | 2006-03-09 | 2016-01-05 | Tela Innovations, Inc. | Oversized contacts and vias in layout defined by linearly constrained topology |
US9035359B2 (en) | 2006-03-09 | 2015-05-19 | Tela Innovations, Inc. | Semiconductor chip including region including linear-shaped conductive structures forming gate electrodes and having electrical connection areas arranged relative to inner region between transistors of different types and associated methods |
US8541879B2 (en) | 2007-12-13 | 2013-09-24 | Tela Innovations, Inc. | Super-self-aligned contacts and method for making the same |
US9009641B2 (en) | 2006-03-09 | 2015-04-14 | Tela Innovations, Inc. | Circuits with linear finfet structures |
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US7763534B2 (en) | 2007-10-26 | 2010-07-27 | Tela Innovations, Inc. | Methods, structures and designs for self-aligning local interconnects used in integrated circuits |
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JP5057739B2 (ja) * | 2006-10-03 | 2012-10-24 | 株式会社東芝 | 半導体記憶装置 |
WO2008069277A1 (ja) * | 2006-12-07 | 2008-06-12 | National Institute Of Advanced Industrial Science And Technology | Sram装置 |
US8705300B1 (en) * | 2007-02-27 | 2014-04-22 | Altera Corporation | Memory array circuitry with stability enhancement features |
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US7929332B2 (en) * | 2007-06-29 | 2011-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device and semiconductor device |
US8217427B2 (en) * | 2007-10-02 | 2012-07-10 | International Business Machines Corporation | High density stable static random access memory |
JP2009093702A (ja) * | 2007-10-04 | 2009-04-30 | Sony Corp | 半導体記憶装置及びその駆動方法 |
US7742325B2 (en) * | 2007-12-17 | 2010-06-22 | Suvolta, Inc. | Swapped-body RAM architecture |
JP5263495B2 (ja) * | 2008-01-25 | 2013-08-14 | ルネサスエレクトロニクス株式会社 | スタティック型半導体記憶装置 |
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US20090201075A1 (en) * | 2008-02-12 | 2009-08-13 | Yannis Tsividis | Method and Apparatus for MOSFET Drain-Source Leakage Reduction |
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JP4844619B2 (ja) * | 2008-03-27 | 2011-12-28 | 株式会社デンソー | 半導体メモリ装置 |
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KR101749351B1 (ko) | 2008-07-16 | 2017-06-20 | 텔라 이노베이션스, 인코포레이티드 | 동적 어레이 아키텍쳐에서의 셀 페이징과 배치를 위한 방법 및 그 구현 |
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Family Cites Families (11)
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KR960006283B1 (ko) * | 1991-08-26 | 1996-05-13 | 닛본덴기 가부시끼가이샤 | 반도체 디램(dram) 장치 |
JPH07105681A (ja) * | 1993-10-07 | 1995-04-21 | Mitsubishi Electric Corp | 半導体装置 |
JPH0973784A (ja) | 1995-09-07 | 1997-03-18 | Nec Corp | 半導体装置及びその制御回路 |
JP3523762B2 (ja) | 1996-12-19 | 2004-04-26 | 株式会社東芝 | 半導体記憶装置 |
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JP4046383B2 (ja) * | 1997-04-01 | 2008-02-13 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
JPH11213673A (ja) | 1998-01-20 | 1999-08-06 | Matsushita Electric Ind Co Ltd | 半導体記憶装置 |
JP2001339071A (ja) | 2000-03-22 | 2001-12-07 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JP2002197867A (ja) * | 2000-12-28 | 2002-07-12 | Nec Corp | 半導体装置 |
JP4623885B2 (ja) | 2001-08-16 | 2011-02-02 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
JP4162076B2 (ja) * | 2002-05-30 | 2008-10-08 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
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2003
- 2003-03-31 JP JP2003095050A patent/JP4290457B2/ja not_active Expired - Lifetime
-
2004
- 2004-03-25 TW TW093108082A patent/TWI238411B/zh not_active IP Right Cessation
- 2004-03-30 CN CNB2004100318538A patent/CN100412985C/zh not_active Expired - Fee Related
- 2004-03-30 KR KR1020040021660A patent/KR100594927B1/ko active IP Right Grant
- 2004-03-30 US US10/812,403 patent/US7079413B2/en not_active Expired - Lifetime
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CN102105941A (zh) * | 2008-08-01 | 2011-06-22 | 松下电器产业株式会社 | 半导体存储装置 |
CN102024816A (zh) * | 2009-09-14 | 2011-04-20 | 瑞萨电子株式会社 | 半导体存储器件 |
CN102024816B (zh) * | 2009-09-14 | 2015-02-11 | 瑞萨电子株式会社 | 半导体存储器件 |
CN102624364B (zh) * | 2011-01-27 | 2015-07-08 | 株式会社索思未来 | 半导体装置 |
CN102624364A (zh) * | 2011-01-27 | 2012-08-01 | 富士通半导体股份有限公司 | 半导体装置 |
CN103703557B (zh) * | 2011-07-29 | 2016-06-15 | 瑞萨电子株式会社 | 半导体器件及半导体器件的制造方法 |
CN103703557A (zh) * | 2011-07-29 | 2014-04-02 | 瑞萨电子株式会社 | 半导体器件及半导体器件的制造方法 |
CN105870064A (zh) * | 2011-07-29 | 2016-08-17 | 瑞萨电子株式会社 | 半导体器件 |
CN109698617A (zh) * | 2017-10-23 | 2019-04-30 | 意法半导体国际有限公司 | 用于生成正电压和负电压的电压倍增器电路 |
CN109698617B (zh) * | 2017-10-23 | 2021-10-26 | 意法半导体国际有限公司 | 用于生成正电压和负电压的电压倍增器电路 |
US11183924B2 (en) | 2017-10-23 | 2021-11-23 | Stmicroelectronics International N.V. | Voltage multiplier circuit with a common bulk and configured for positive and negative voltage generation |
CN109830253A (zh) * | 2018-12-27 | 2019-05-31 | 西安紫光国芯半导体有限公司 | 用于减少本地字线驱动器漏电的电路及方法、本地字线驱动器 |
CN111798899A (zh) * | 2019-04-04 | 2020-10-20 | 华邦电子股份有限公司 | 半导体装置 |
CN111798899B (zh) * | 2019-04-04 | 2022-06-17 | 华邦电子股份有限公司 | 半导体装置 |
US11430796B2 (en) | 2019-04-04 | 2022-08-30 | Winbond Electronics Corp. | SRAM layout scheme for improving write margin |
Also Published As
Publication number | Publication date |
---|---|
JP4290457B2 (ja) | 2009-07-08 |
KR20040086780A (ko) | 2004-10-12 |
KR100594927B1 (ko) | 2006-06-30 |
TW200428389A (en) | 2004-12-16 |
JP2004303340A (ja) | 2004-10-28 |
US20040252548A1 (en) | 2004-12-16 |
US7079413B2 (en) | 2006-07-18 |
TWI238411B (en) | 2005-08-21 |
CN100412985C (zh) | 2008-08-20 |
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