CN1134797C - 叠层电子元件 - Google Patents
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Abstract
本发明涉及一种叠层电子元件,它包括通过层叠其上形成有线圈导体的绝缘薄层形成的叠层和最外层绝缘薄片。把线圈导体经通孔串联连接,形成线圈。绝缘薄层层叠的方向和输入/输出外部电极垂直,而和安装表面平行。把最外层绝缘层的厚度设定为大于叠层的圆角的半径和外部电极折叠部分的长度。依据本发明的叠层电子元件能防止由机械应力引起的层间剥落。
Description
本发明涉及叠层电子元件,例如叠层电容器、叠层电感器和叠层LC滤波器。
已知道一种传统的叠层电子元件,包括通过层叠内部电极和绝缘薄层形成的叠层。在这种类型的元件中,所用的绝缘薄层具有大致相等的厚度。由于外部的机械冲击容易在叠层的角部引起损坏或类似的结果,叠层要进行滚筒抛光处理以避免损坏之类的现象发生,所以叠层的角部是倒圆的。
如图9所示,依据一个电子元件51,此元件具有的结构是,内部电极(未示出)和绝缘薄层52层叠的方向垂直于在叠层的两个相对侧上形成的外部电极53和54,在为防止叠层角部破裂的滚筒抛光中所施加的机械应力减小了在角部55内的层间粘附,而在角部55处容易发生层间剥落。
在电路基座部件61上安装电子元件51,会引起一通过焊缝62和63的外部的机械应力(例如,由焊接时的热膨胀和收缩所施加的,电路基件61的弯曲等等引起的应力),在外部电极和绝缘薄层之间的界面或绝缘薄层之间的界面上集中。这样,在角部55由于滚筒抛光的机械应力而减小了层间粘附,有可能发生层间剥落。
于是,本发明的一个目的是提供一种叠层电子元件,能够防止由在滚筒抛光中施加的机械应力和在把叠层电子元件安装在电路基底部件61上时,通过焊缝施加的的外部机械应力等等这些应力引起的层间剥落。
所以,依据本发明的一个方面,上述目的通过提供一个叠层电子元件而达到,此叠层电子元件包括由层叠内部电极和绝缘体组成的叠层,其中,内部电极和绝缘体层叠的方向垂直于分别在叠层的两个相对侧上形成的外部电极,并且,叠层最外层绝缘体的厚度大于叠层的圆角的半径。
依据本发明的另一个方面,上述目的已通过提供一个叠层电子元件而达到,此叠层电子元件包含通过层叠内部电极和绝缘体形成的叠层,其中,内部电极和绝缘体堆叠的方向垂直于分别在叠层的两个相对侧上形成的外部电极,并且,叠层最外层绝缘体的厚度大于叠层的外部电极折叠部分的长度。
依据本发明,把叠层的最外层绝缘体的厚度设置得大于叠层的圆角的半径或叠层的外部电极折叠部分的长度,这样即使在把电子元件安装到电路基件上时通过焊缝施加一外部的机械应力,也能防止电子元件的体内发生层间剥落。结果,可以避免例如安装在电路基件上的电子元件的层间剥落或裂纹之类的损坏。
图1是一部件分解透视图,显示了本发明第一实施例的叠层电子元件。
图2是一透视图,显示了图1所示的叠层电子元件的外部。
图3是沿图2的直线III-III所取的剖面图。
图4是图2所示的叠层电子元件的等效电路图。
图5是一部件分解透视图,显示了本发明第二实施例的叠层电子元件。
图6是一透视图,显示了图5所示的叠层电子元件的外部。
图7是沿图6的直线VII-VII所取的剖面图。
图8是图6所示的叠层电子元件的等效电路图。
图9是一剖面图,显示了一个叠层电子元件。
下文将依据图示,描述本发明的叠层电子元件的各实施例。
(第一实施例(图1到4))
现在描述本发明第一实施例的叠层电子元件。如图1所示,一叠层电感器1包括绝缘薄层21,22,23,到2n,此绝缘薄片上分别形成有线圈导体51,52,53到5n,还有绝缘薄层20和2n+1,在它们上面分别形成通孔80和8n+1。螺旋管5通过形成于绝缘薄层21到2n上的接力通孔81到8n把线圈导体51到5n电气串联而形成。
线圈导体51到5n由诸如Ag、Pd、Ag-Pd和Cu等材料组成,通过诸如公知的印刷方法、溅射或真空淀积,在绝缘薄片20到2n的表面上形成这些线圈导体。比如把铁氧体或绝缘体用作绝缘薄片20到2n+1的材料。把绝缘薄层20到2n的厚度比如定为20到30μm。这种情况下,把最外层绝缘薄层20或2n+1的厚度d1设定为50到100μm或更大。
把各绝缘薄层20到2n+1层叠起来,并且随后烧结在一起以形成叠层。然后,如图2和图3所示,叠层角部15通过滚筒抛光而进行倒圆。把此圆角15的半径设定为等于或小于最外层绝缘薄层20或2n+1的厚度d1。相应地,在进行滚筒抛光处理时发挥影响的机械应力并不在绝缘薄层的界面上,这样,消除了角部15的界面粘附变坏的可能性。圆角15的特定半径例如在大约50到100μm之间。
然后,在叠层左侧和右侧形成输入/输出外部电极10和11。把输出/输入外部电极10或11的折叠部分10a或11a的长度设定为等于或小于最外层绝缘薄层20或2n+1的厚度d1。折叠部分10a或11a的特定长度d2例如在大约50和100μm之间。
输入/输出外部电极10和11通过诸如在涂敷后烘培、溅射或真空淀积等方法形成。输入/输出外部电极10通过延伸通孔80电气连接到线圈5的一端,具体地说,是线圈导体51的一端。输入/输出外部电极11通过延伸通孔8n+1电气连接到线圈5的另一端,具体地说,是线圈导体5n的一端。图4显示了电感器1的等效电路图。
当把这样得到的电感器1安装在电路基件16上时,线圈5的轴向和输入/输出外部电极10和11垂直,并和安装表面13(示于图2和3)平行。这样,由于产生于线圈5内的磁通量Φ的方向和安装表面13平行,所以磁通量Φ几乎不会因大的导体图形而减弱,诸如在电路基件16上形成的地。结果,减小了电感器1的自感值或Q值的下降。
另外,把最外层绝缘薄层20或2n+1的厚度d1设定为大于圆角15的半径和输入/输出外部电极10或11的折叠部分10a或11a的长度d2。这样,电感器1具有这样一种结构,其中,通过焊缝17和18施加的外部机械应力(例如,由焊接时的热膨胀和收缩或电路基件16的弯曲引起的应力)几乎不施加在线圈感应器51到5n和绝缘薄层20到2n+1之间的界面上,或绝缘薄层20到2n+1相互之间的界面上。结果,此结构防止了诸如电感器的层间剥落和裂纹之类的损坏的发生。
(第二实施例(图5到8))
对于本发明的第二实施例描述一种叠层LC滤波器。
如图5所示,一个叠层LC滤波器21包括其上形成有线圈导体251、252、253、254、261、262、263和264的绝缘薄层22。在其上形成有延伸通孔29的绝缘薄层23,还有在其上形成有电容器电极31和32的绝缘薄层30。通过经由形成于绝缘薄层22上的接力通孔281到284把线圈感应器251到254电气串联,形成螺线管25。相似地,通过经形成于绝缘薄层22上的接力通孔289到2812把线圈导体261到264电气串联,形成螺线管26。
经接力通孔284到288把电容器电极31串联连接在线圈25和线圈26之间。把另一个电容器电极32放置在接力通孔286和288的周围,其问有一预定的距离。电容器电极31的一端露出在绝缘薄层30的前侧,而它的另一端露出在绝缘薄片30的后侧。电容器电极31和32之间形成静电电容。
把绝缘薄层22或30的厚度设定为20或30μm。另外,把最外层绝缘薄层23的厚度设定为50到100μm或更大。把一种磁性材料用作绝缘薄层22或23的材料,而把一种电介质材料作为绝缘薄层30的材料。
层叠各绝缘薄层22,23,和30,随后将它们一起烧结以形成叠层。然后,如图6和7所示,叠层的角部35通过滚筒式抛光而倒圆。把圆角35的半径设定为等于或小于绝缘薄片23的厚度d1。相应地,进行滚筒抛光时的机械应力不施加在绝缘薄层的界面上,这消除了角35的层间粘附变坏的可能性。圆角35的特定半径例如大约在50到100μm之间。
然后,在叠层的左侧和右侧形成输入/输出外部电极40和41。在叠层的前侧和后侧形成接地的外部电极42和43。把输入/输出外部电极40或41的折叠部分40a和41a的长度d2设定为等于或小于最外层绝缘薄层23的厚度d1。折叠部分40a或41a的特定的长度d2例如大致在50到100μm之间。
输入/输出外部电极40经延伸通孔29和线圈25的一端电气连接,具体地说是线圈导体251的一端。输入/输出外部电极41经延伸通孔29和线圈26的一端电气连接,具体地说是线圈导体264的一端。接地外部电极42和43分别和电容器电极32的端子电气连接。图8显示了LC滤波器21的等效电路图。这样得到的LC滤波器21工作类似于第一实施例的电感器1。
(其它实施例)
依据本发明的叠层电子元件并不限于上述实施例,而可在本发明的主旨范围有各种修改。
最外层绝缘薄层的厚度并不总是如上面实施例中所述的那样,设定为既大于叠层圆角的半径又大于外部电极折叠部分的厚度。可以设定其中的一个。
另外,最外层绝缘薄层可用几个厚度大于设置在内电极之间的绝缘薄片的厚度的绝缘薄层形成。
虽然第二实施例描述了使用两个线圈和一个电容器的情况,但内装线圈和电容器的数量是可选的。增加线圈和电容器的数量,就增加了叠层侧面上形成的接地外部电极的数量。除叠层电感应器和LC滤波器外,电子元件还可包括有一个可变电阻和一个电容器。
根据上述实施例,层叠绝缘薄层,并将它们烧结在一起,以形成叠层。但本发明并不限于此。可以使用先烧结好的绝缘薄层。另外,可得到一种叠层电子元件,从而用诸如印刷的方法相连地施加、烘干、再施加一种绝缘膏和一种导电膏。
Claims (2)
1.一种叠层电子元件,包括通过层叠内部电极和绝缘体形成的叠层,其特征在于,所述内部电极和所述绝缘体层叠的方向垂直于分别在所述叠层的两个相对侧上形成的外部电极,并且所述叠层最外层绝缘体的厚度大于所述叠层的圆角的半径。
2.一种叠层电子元件,包括通过层叠内部电极和绝缘体形成的叠层,其特征在于,所述内部电极和所述绝缘体层叠的方向垂直于分别在所述叠层的两个相对侧上形成的外部电极,并且所述叠层最外层绝缘体的厚度大于所述外部电极的折叠部分的长度。
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Application Number | Priority Date | Filing Date | Title |
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JP241987/1996 | 1996-09-12 | ||
JP241987/96 | 1996-09-12 | ||
JP08241987A JP3077056B2 (ja) | 1996-09-12 | 1996-09-12 | 積層型電子部品 |
Publications (2)
Publication Number | Publication Date |
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CN1189677A CN1189677A (zh) | 1998-08-05 |
CN1134797C true CN1134797C (zh) | 2004-01-14 |
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ID=17082571
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB971182906A Expired - Lifetime CN1134797C (zh) | 1996-09-12 | 1997-09-12 | 叠层电子元件 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5985414A (zh) |
JP (1) | JP3077056B2 (zh) |
KR (1) | KR100258791B1 (zh) |
CN (1) | CN1134797C (zh) |
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ES2259819T3 (es) * | 1997-10-22 | 2006-10-16 | Bae Systems Bofors Ab | Circuito electronico integrado que comprende un oscilador y elementos de circuito pasivos. |
MY122218A (en) * | 1998-02-02 | 2006-03-31 | Taiyo Yuden Kk | Multilayer electronic component and manufacturing method therefor |
JP2000357624A (ja) * | 1999-06-16 | 2000-12-26 | Murata Mfg Co Ltd | 積層セラミック電子部品 |
JP2001023822A (ja) * | 1999-07-07 | 2001-01-26 | Tdk Corp | 積層フェライトチップインダクタアレイおよびその製造方法 |
JP2001036372A (ja) * | 1999-07-15 | 2001-02-09 | Murata Mfg Co Ltd | ディレイライン |
KR100340130B1 (ko) * | 1999-11-09 | 2002-06-10 | 엄우식 | 정 온도 계수 서미스터와 배리스터 복합소자 및 그 제조방법 |
DE10040811A1 (de) * | 2000-08-21 | 2002-03-14 | Infineon Technologies Ag | Monolithisch integrierbare Induktivität |
JP3791333B2 (ja) * | 2000-12-28 | 2006-06-28 | 松下電器産業株式会社 | 高周波スイッチモジュールおよびこれを実装した高周波機器 |
US7152291B2 (en) | 2002-04-15 | 2006-12-26 | Avx Corporation | Method for forming plated terminations |
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US7576968B2 (en) * | 2002-04-15 | 2009-08-18 | Avx Corporation | Plated terminations and method of forming using electrolytic plating |
US7177137B2 (en) * | 2002-04-15 | 2007-02-13 | Avx Corporation | Plated terminations |
US6982863B2 (en) * | 2002-04-15 | 2006-01-03 | Avx Corporation | Component formation via plating technology |
EP1458226A3 (en) * | 2003-03-11 | 2006-06-28 | Fujitsu Hitachi Plasma Display Limited | Circuit board assembly and flat coil |
US7167070B2 (en) * | 2003-09-01 | 2007-01-23 | Murata Manufacturing Co., Ltd. | Laminated coil component and method of producing the same |
KR20060031943A (ko) * | 2004-10-11 | 2006-04-14 | 삼성전기주식회사 | 바리스터-lc필터 겸용 복합소자 |
JP4650007B2 (ja) * | 2005-02-01 | 2011-03-16 | 株式会社村田製作所 | 積層コンデンサ |
US7268645B2 (en) * | 2005-05-09 | 2007-09-11 | Seiko Epson Corporation | Integrated resonator structure and methods for its manufacture and use |
KR100668977B1 (ko) * | 2005-06-27 | 2007-01-16 | 삼성전자주식회사 | 써지전압 보호용 소자 |
KR100786416B1 (ko) * | 2006-11-21 | 2007-12-17 | 주식회사 아모텍 | 적층형 칩 소자 |
US8493744B2 (en) * | 2007-04-03 | 2013-07-23 | Tdk Corporation | Surface mount devices with minimum lead inductance and methods of manufacturing the same |
KR101105653B1 (ko) * | 2008-09-24 | 2012-01-18 | 가부시키가이샤 무라타 세이사쿠쇼 | 적층 코일 부품 |
CN101763934B (zh) * | 2010-01-20 | 2012-08-22 | 深圳顺络电子股份有限公司 | 一种无极性叠层片式电感器 |
WO2012023315A1 (ja) * | 2010-08-18 | 2012-02-23 | 株式会社村田製作所 | 電子部品及びその製造方法 |
JP6005945B2 (ja) * | 2011-03-18 | 2016-10-12 | 日本碍子株式会社 | 複合電子部品 |
JP2012204441A (ja) * | 2011-03-24 | 2012-10-22 | Murata Mfg Co Ltd | 電子部品 |
TWI502802B (zh) | 2011-03-25 | 2015-10-01 | Murata Manufacturing Co | Electronic Parts |
KR20130023612A (ko) * | 2011-08-29 | 2013-03-08 | 삼성전기주식회사 | 적층 세라믹 전자부품 |
FR3003354B1 (fr) * | 2013-03-12 | 2015-04-17 | Alstom Technology Ltd | Element resistif, module rc et diviseur en tension rc pour poste electrique haute tension isole par un fluide dielectrique |
KR101499717B1 (ko) * | 2013-05-21 | 2015-03-06 | 삼성전기주식회사 | 적층 세라믹 커패시터 및 적층 세라믹 커패시터 실장 기판 |
KR102122934B1 (ko) * | 2013-07-22 | 2020-06-15 | 삼성전기주식회사 | 적층 세라믹 커패시터 및 그 실장 기판 |
KR101983146B1 (ko) * | 2013-08-14 | 2019-05-28 | 삼성전기주식회사 | 칩 전자부품 |
KR20150058869A (ko) * | 2013-11-21 | 2015-05-29 | 삼성전기주식회사 | 적층형 인덕터 |
KR20150114747A (ko) * | 2014-04-02 | 2015-10-13 | 삼성전기주식회사 | 칩형 코일 부품 및 그 실장 기판 |
KR102004794B1 (ko) * | 2014-06-24 | 2019-07-29 | 삼성전기주식회사 | 복합 전자부품 및 그 실장 기판 |
KR102271041B1 (ko) * | 2018-11-13 | 2021-07-01 | 삼성전기주식회사 | 적층 세라믹 전자부품 |
KR102263865B1 (ko) * | 2018-11-16 | 2021-06-11 | 삼성전기주식회사 | 적층 세라믹 전자부품 |
JP2021097080A (ja) * | 2019-12-13 | 2021-06-24 | 株式会社村田製作所 | 積層型コイル部品 |
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US3679950A (en) * | 1971-04-16 | 1972-07-25 | Nl Industries Inc | Ceramic capacitors |
US4071880A (en) * | 1974-06-10 | 1978-01-31 | N L Industries, Inc. | Ceramic bodies with end termination electrodes |
EP0189087B1 (de) * | 1985-01-17 | 1988-06-22 | Siemens Aktiengesellschaft | Spannungsabhängiger elektrischer Widerstand (Varistor) |
DE3873206D1 (de) * | 1987-07-31 | 1992-09-03 | Siemens Ag | Fuellschichtbauteil mit einem gesinterten, monolithischen keramikkoerper und verfahren zu dessen herstellung. |
JPH04221888A (ja) * | 1990-12-21 | 1992-08-12 | Matsushita Electric Ind Co Ltd | セラミック配線基板とその製造方法 |
US5312674A (en) * | 1992-07-31 | 1994-05-17 | Hughes Aircraft Company | Low-temperature-cofired-ceramic (LTCC) tape structures including cofired ferromagnetic elements, drop-in components and multi-layer transformer |
JPH06325979A (ja) * | 1993-05-11 | 1994-11-25 | Murata Mfg Co Ltd | 複合電子部品 |
-
1996
- 1996-09-12 JP JP08241987A patent/JP3077056B2/ja not_active Expired - Lifetime
-
1997
- 1997-09-10 KR KR1019970046496A patent/KR100258791B1/ko not_active IP Right Cessation
- 1997-09-12 CN CNB971182906A patent/CN1134797C/zh not_active Expired - Lifetime
- 1997-09-12 US US08/928,421 patent/US5985414A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP3077056B2 (ja) | 2000-08-14 |
CN1189677A (zh) | 1998-08-05 |
KR19980024487A (ko) | 1998-07-06 |
JPH1092691A (ja) | 1998-04-10 |
KR100258791B1 (ko) | 2000-06-15 |
US5985414A (en) | 1999-11-16 |
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