CN1127131C - 用以覆盖半导体器件上的孔的基层结构及其形成方法 - Google Patents
用以覆盖半导体器件上的孔的基层结构及其形成方法 Download PDFInfo
- Publication number
- CN1127131C CN1127131C CN98106991A CN98106991A CN1127131C CN 1127131 C CN1127131 C CN 1127131C CN 98106991 A CN98106991 A CN 98106991A CN 98106991 A CN98106991 A CN 98106991A CN 1127131 C CN1127131 C CN 1127131C
- Authority
- CN
- China
- Prior art keywords
- hole
- basic unit
- thickness
- insulating barrier
- extends
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
- H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
Description
Claims (27)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9102169A JP3050161B2 (ja) | 1997-04-18 | 1997-04-18 | 半導体装置及びその製造方法 |
JP102169/97 | 1997-04-18 | ||
JP102169/1997 | 1997-04-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1198587A CN1198587A (zh) | 1998-11-11 |
CN1127131C true CN1127131C (zh) | 2003-11-05 |
Family
ID=14320214
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN98106991A Expired - Fee Related CN1127131C (zh) | 1997-04-18 | 1998-04-17 | 用以覆盖半导体器件上的孔的基层结构及其形成方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US6051880A (zh) |
JP (1) | JP3050161B2 (zh) |
KR (1) | KR19980081534A (zh) |
CN (1) | CN1127131C (zh) |
DE (1) | DE19817558A1 (zh) |
TW (1) | TW436873B (zh) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6284316B1 (en) * | 1998-02-25 | 2001-09-04 | Micron Technology, Inc. | Chemical vapor deposition of titanium |
JP3575373B2 (ja) * | 1999-04-19 | 2004-10-13 | 株式会社村田製作所 | 外力検知センサの製造方法 |
JP2001015508A (ja) * | 1999-06-28 | 2001-01-19 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US6444574B1 (en) * | 2001-09-06 | 2002-09-03 | Powerchip Semiconductor Corp. | Method for forming stepped contact hole for semiconductor devices |
US6875693B1 (en) * | 2003-03-26 | 2005-04-05 | Lsi Logic Corporation | Via and metal line interface capable of reducing the incidence of electro-migration induced voids |
US7833893B2 (en) * | 2007-07-10 | 2010-11-16 | International Business Machines Corporation | Method for forming conductive structures |
JP5634742B2 (ja) * | 2010-04-30 | 2014-12-03 | ピーエスフォー ルクスコ エスエイアールエルPS4 Luxco S.a.r.l. | 半導体装置の製造方法 |
US9856132B2 (en) | 2010-09-18 | 2018-01-02 | Fairchild Semiconductor Corporation | Sealed packaging for microelectromechanical systems |
US8813564B2 (en) | 2010-09-18 | 2014-08-26 | Fairchild Semiconductor Corporation | MEMS multi-axis gyroscope with central suspension and gimbal structure |
US9278846B2 (en) | 2010-09-18 | 2016-03-08 | Fairchild Semiconductor Corporation | Micromachined monolithic 6-axis inertial sensor |
DE112011103124T5 (de) | 2010-09-18 | 2013-12-19 | Fairchild Semiconductor Corporation | Biegelager zum Verringern von Quadratur für mitschwingende mikromechanische Vorrichtungen |
EP2616389B1 (en) | 2010-09-18 | 2017-04-05 | Fairchild Semiconductor Corporation | Multi-die mems package |
EP2616772B1 (en) | 2010-09-18 | 2016-06-22 | Fairchild Semiconductor Corporation | Micromachined monolithic 3-axis gyroscope with single drive |
KR101332701B1 (ko) | 2010-09-20 | 2013-11-25 | 페어차일드 세미컨덕터 코포레이션 | 기준 커패시터를 포함하는 미소 전자기계 압력 센서 |
JP5966301B2 (ja) * | 2011-09-29 | 2016-08-10 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
US9488693B2 (en) | 2012-04-04 | 2016-11-08 | Fairchild Semiconductor Corporation | Self test of MEMS accelerometer with ASICS integrated capacitors |
EP2647955B8 (en) | 2012-04-05 | 2018-12-19 | Fairchild Semiconductor Corporation | MEMS device quadrature phase shift cancellation |
EP2647952B1 (en) | 2012-04-05 | 2017-11-15 | Fairchild Semiconductor Corporation | Mems device automatic-gain control loop for mechanical amplitude drive |
KR102058489B1 (ko) | 2012-04-05 | 2019-12-23 | 페어차일드 세미컨덕터 코포레이션 | 멤스 장치 프론트 엔드 전하 증폭기 |
US9625272B2 (en) | 2012-04-12 | 2017-04-18 | Fairchild Semiconductor Corporation | MEMS quadrature cancellation and signal demodulation |
DE102013014881B4 (de) | 2012-09-12 | 2023-05-04 | Fairchild Semiconductor Corporation | Verbesserte Silizium-Durchkontaktierung mit einer Füllung aus mehreren Materialien |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4656732A (en) * | 1984-09-26 | 1987-04-14 | Texas Instruments Incorporated | Integrated circuit fabrication process |
US4782380A (en) * | 1987-01-22 | 1988-11-01 | Advanced Micro Devices, Inc. | Multilayer interconnection for integrated circuit structure having two or more conductive metal layers |
JPS63258021A (ja) * | 1987-04-16 | 1988-10-25 | Toshiba Corp | 接続孔の形成方法 |
GB2206540B (en) * | 1987-06-30 | 1991-03-27 | British Aerospace | Aperture forming method |
JP2941841B2 (ja) * | 1989-03-10 | 1999-08-30 | 沖電気工業株式会社 | 合金配線の形成方法 |
JPH06104341A (ja) | 1992-09-18 | 1994-04-15 | Toshiba Corp | 半導体集積回路およびその製造方法 |
KR940010197A (ko) * | 1992-10-13 | 1994-05-24 | 김광호 | 반도체 장치의 제조방법 |
KR960006693B1 (ko) * | 1992-11-24 | 1996-05-22 | 현대전자산업주식회사 | 고집적 반도체 접속장치 및 그 제조방법 |
KR960001176B1 (ko) * | 1992-12-02 | 1996-01-19 | 현대전자산업주식회사 | 반도체 접속장치 및 그 제조방법 |
JP3240724B2 (ja) * | 1993-02-09 | 2001-12-25 | ソニー株式会社 | 配線形成方法 |
US5705429A (en) * | 1993-10-04 | 1998-01-06 | Yamaha Corporation | Method of manufacturing aluminum wiring at a substrate temperature from 100 to 150 degrees celsius |
JPH07130681A (ja) * | 1993-10-30 | 1995-05-19 | Sony Corp | 半導体装置の配線接続孔の形成方法装置 |
JPH07130744A (ja) * | 1993-11-05 | 1995-05-19 | Sony Corp | 接続孔の形成方法 |
JPH0878525A (ja) * | 1994-09-07 | 1996-03-22 | Seiko Epson Corp | 半導体装置及びその製造方法 |
JP2891161B2 (ja) * | 1996-02-15 | 1999-05-17 | 日本電気株式会社 | 配線形成方法 |
US5746884A (en) * | 1996-08-13 | 1998-05-05 | Advanced Micro Devices, Inc. | Fluted via formation for superior metal step coverage |
-
1997
- 1997-04-18 JP JP9102169A patent/JP3050161B2/ja not_active Expired - Fee Related
-
1998
- 1998-04-17 CN CN98106991A patent/CN1127131C/zh not_active Expired - Fee Related
- 1998-04-17 US US09/061,872 patent/US6051880A/en not_active Expired - Lifetime
- 1998-04-17 TW TW087105932A patent/TW436873B/zh not_active IP Right Cessation
- 1998-04-18 KR KR1019980013954A patent/KR19980081534A/ko active IP Right Grant
- 1998-04-20 DE DE19817558A patent/DE19817558A1/de not_active Withdrawn
-
2000
- 2000-01-03 US US09/477,009 patent/US6313030B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE19817558A1 (de) | 1998-10-22 |
TW436873B (en) | 2001-05-28 |
CN1198587A (zh) | 1998-11-11 |
KR19980081534A (ko) | 1998-11-25 |
JP3050161B2 (ja) | 2000-06-12 |
US6313030B1 (en) | 2001-11-06 |
US6051880A (en) | 2000-04-18 |
JPH10294365A (ja) | 1998-11-04 |
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