CN111834232A - 一种无特征层结构的转接载板及其制造方法 - Google Patents

一种无特征层结构的转接载板及其制造方法 Download PDF

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CN111834232A
CN111834232A CN202010536963.9A CN202010536963A CN111834232A CN 111834232 A CN111834232 A CN 111834232A CN 202010536963 A CN202010536963 A CN 202010536963A CN 111834232 A CN111834232 A CN 111834232A
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copper
insulating layer
carrier
layer
temporary
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CN111834232B (zh
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陈先明
顾敏
黄本霞
冯磊
谢炳森
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Zhuhai Yueya Semiconductor Co ltd
Zhuhai Access Semiconductor Co Ltd
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Abstract

本发明提供了一种无特征层结构的转接载板的制造方法，包括准备临时承载板；对所述临时承载板制作包边；在临时承载板的上下表面上层压绝缘材料形成绝缘层；在所述绝缘层上开设通孔；用金属填充所述通孔；去除包边，并去除临时承载板。本发明还提供了一种无特征层结构的转接载板，包括绝缘层和嵌入在所述绝缘层中的通孔柱层，其中通孔柱的端部用作焊盘。

Description

一种无特征层结构的转接载板及其制造方法
技术领域
本发明涉及无特征层结构的转接载板及其制造方法。
背景技术
在电子行业，尤其是消费电子行业中，小微型功能器件如音频PA开关、LEDdriver、射频LNA/GPS/LDO，controller等，对小型化的要求越来越高，通常是通过增加IO(输入输出)数实现小型化，但是用常规载板(有机载板和引线框架)已经达到布线的极限，没办法再增加IO数。
现在业界，不论是晶圆的3D堆叠结构中使用的转接载板，如TGV(through glassvia玻璃通孔转接板)、TSV(through silicon via硅通孔转接板)，还是封装基板转接板，都是利用通孔连接上下两层特征层构成的3层板结构，其中特征层用作打线和焊球的焊盘。
对于此类现有转接板而言，特征层间最小间距能力限制了进一步缩小的可能，图1示出现有转接板的一个示例。图1为通孔柱在开孔后电镀前的SEM图片，如图1所示，当通孔柱的直径是100μm时，孔与孔之间的间距是45μm，当通孔柱的直径减小到60μm时，孔与孔之间的间距是30μm。但是当继续制作特征层时，以业界最好的激光直接成像LDI曝光机为例，目前载板行业的对位对准能力是20μm，解析能力线宽/线距为15/15μm，也就是说当铜通孔柱直径是100μm，孔与孔之间的间距是45μm的情况下，特征层中的焊盘直径是140μm，相邻焊盘的间距就只有5μm，这种间距已经超出目前载板行业设备解析的最高能力。
当特征层的最小间距仍小于设备的解析能力时，唯一的办法是通过重新布线，将焊盘向外(四周)扩散，这样的后果是产品尺寸变大，违背市场小型化的发展趋势。仍如图1所示，当有特征层的情况下，相邻焊盘所需要的长度尺寸是140μm(一个焊盘直径)+140μm(另一个焊盘直径)+15μm(焊盘间最小间距)＝295μm。然而，如果能够取消特征层，则相邻通孔柱的长度尺寸是100μm+100μm+45μm＝245μm，亦即从单一方向上，取消特征层能够有效节约17％的长度占比。
同时由于通孔柱与特征层间对位能力的限制，特征层尺寸必定比通孔柱尺寸大，超出的部分是由设备的对位能力来决定的，称作“对位环宽”。在开关和射频RF等器件上，反复的连接/关断和变频不可避免地会产生寄生电容，图2为现有技术中一种转接板的结构示意图，如图2所示，将上方的特征层命名为M1层，下方的特征层命名为M2层，当电流(或电信号)从M1层经由通孔铜柱流过M2层的过程中，可将电路等效为如图3所示。
寄生电感L12的产生会导致器件工作过程中不必要的发热，产品的工作温度高间接将缩短产品的使用寿命；寄生电容C1和C2的产生会导致电信号在绝缘层内的损耗，同时寄生电容的充电过程会导致电信号的传递时延。寄生电感L12随传输线路的减短而减小，寄生电容C1和C2随对位环宽的减小而降低。
发明内容
本发明的实施方案涉及提供一种无特征层结构的转接载板解决方案。
本发明第一方面涉及一种无特征层结构的转接载板的制造方法，包括：
(a)准备临时承载板；
(b)对所述临时承载板制作包边；
(c)在临时承载板的上下表面上层压绝缘层材料形成绝缘层；
(d)在所述绝缘层上开设通孔；
(e)用金属填充所述通孔；
(f)去除包边，并去除临时承载板。
在一些实施方式中，临时承载板包括双层覆铜板，即上下表面分别覆有双层铜箔的绝缘板。
在一些实施方式中，临时承载板包括在所述绝缘板表面的第一铜箔和在所述第一铜箔表面的第二铜箔，所述第二铜箔的厚度为0.8μm～5μm。
在一些实施方式中，步骤(b)包括用包覆材料包覆所述临时承载板的周边，包覆材料可以是铜。
在一些实施方式中，步骤(c)中的绝缘层包括聚酰亚胺、环氧树脂、双马来酰亚胺/三嗪树脂、聚苯醚、聚丙烯酸酯、半固化片、膜状有机树脂或它们的组合。
在一些实施方式中，步骤(d)包括在所述绝缘层上通过激光开孔、机械开孔或光刻开孔的方式开设通孔。
在一些实施方式中，步骤(e)包括采用电镀或化学镀的方式填充所述通孔。
在一些实施方式中，步骤(e)中的填充金属为铜，以形成铜通孔柱。
在一些实施方式中，步骤(f)包括用铣刀铣去所述包边。
根据本发明的另一方面，提供一种无特征层结构的转接载板，其采用如前所述的无特征层结构的转接载板的制造方法制备。
在一些实施方式中，所述转接载板包括绝缘层和嵌入在所述绝缘层中的通孔柱层。
在一些实施方式中，所述绝缘层包括聚酰亚胺、环氧树脂、双马来酰亚胺/三嗪树脂、聚苯醚、聚丙烯酸酯、半固化片、膜状有机树脂或它们的组合。
在一些实施方式中，所述通孔柱层包括至少一个铜通孔柱。
在一些实施方式中，所述通孔柱层包括不同尺寸的通孔柱。
在一些实施方式中，所述通孔柱的端部与所述绝缘层平齐或高出所述绝缘层。
术语μm是指10-6米。
附图说明
为了更好地理解本发明并示出本发明的实施方式，以下纯粹以举例的方式参照附图。
具体参照附图时，必须强调的是特定的图示是示例性的并且目的仅在于说明性地讨论本发明的优选实施方案，并且基于提供被认为是对于本发明的原理和概念方面的描述最有用和最易于理解的图示的原因而被呈现。就此而言，没有试图将本发明的结构细节以超出对本发明基本理解所必须的详细程度来图示；参照附图的说明使本领域技术人员认识到本发明的几种形式可如何实际体现出来。在附图中：
图1示出现有技术中的一种转接载板，其中示出通孔柱在开孔后电镀前的SEM图片；
图2为现有技术中的一种转接板的截面示意图；
图3为图2中的转接载板的电路等效示意图；
图4为根据本发明的一个实施方案的无特征层结构的转接载板的截面示意图；
图5(a)-(f)示出图4所示的无特征层结构的转接载板的制造步骤的截面图。
具体实施方式
参照图4，示出本发明的无特征层结构的转接载板的截面示意图。转接载板200包括绝缘层204和嵌入在绝缘层204内的铜通孔柱206。铜通孔柱206的端部与其嵌入在绝缘层204内的部分具有基本相同的尺寸。铜通孔柱206的端部可以与绝缘层204平齐，也可以高出绝缘层204。通常，转接载板200具有多个铜通孔柱206作为转接IO通道，多个铜通孔柱206的尺寸可以相同，也可以不同。铜通孔柱206在绝缘层204内间隔设置，使得其端部可被用作连接焊盘。
参照图5(a)-(f)，一种制造无特征层结构的转接载板的方法包括以下步骤：准备临时承载板201—步骤5(a)，如图5(a)所示。临时承载板201通常是上表面201a、下表面201b分别覆有双层铜箔的绝缘板，双层铜箔包括物理压合在一起的第一铜箔202a和第二铜箔202b，第一铜箔202a与临时承载板201接触，第二铜箔202b贴合在第一铜箔202a的表面，第二铜箔202b的厚度为0.8μm～5μm。
接着，对所述临时承载板201制作包边203—步骤5(b)，如图5(b)所示。通常，在临时承载板201的上表面201a、下表面201b的板周用金属包覆形成密封板周间隙的包边，采用的包覆材料可以为铜。通过制作包边203能够防止后续制程中双层铜箔分层和药液残留在双层铜箔的分界面处。
然后，在临时承载板201的上下表面上层压绝缘材料形成绝缘层204—步骤5(c)，如图5(c)所示。通常，在临时承载板201的上表面201a、下表面201b上分别层压绝缘材料形成绝缘层。采用的绝缘材料可以是聚合物材料，例如可以为聚酰亚胺、环氧树脂、双马来酰亚胺/三嗪树脂(BT)、聚苯醚、聚丙烯酸酯、半固化片(PP)、膜状有机树脂(ABF)或它们的组合；也可以是感光型绝缘材料。
接着，在所述绝缘层204上开设通孔205—步骤5(d)，如图5(d)所示。
在绝缘层204上开设通孔205的步骤5(d)可以采用激光开孔、机械开孔或光刻开孔的方式在绝缘层204上开设通孔205。
然后，填充所述通孔205—步骤5(e)，如图5(e)所示。通常，可以采用电镀或化学镀的方式利用金属填充通孔205，形成金属通孔柱205；电镀时采用的金属可以是铜，形成铜通孔柱206。
接着，去除包边203，并去除临时承载板201—步骤5(f)，如图5(f)所示。在使用铜通孔柱206和绝缘层204使结构200具有刚性后，可以移除临时承载板201。通常，去除临时承载板201之前，需要先去除包边203，可以采用铣刀207铣去包边203，然后分离第一和第二铜箔以移除临时承载板201。
在移除临时承载板201后，可通过蚀刻移除第二铜箔202b得到无特征层转接载板200。电镀制备铜通孔柱206过程会产生应力使无特征层载板200向临时承载板201的相反方向翘曲，可以在移除第二铜箔202b后通过烘烤释放应力使板面平坦。然后，可以对板面进行磨板，施加阻焊剂并暴露出通孔柱端部作为焊盘。
本发明通过省略现有技术的转接载板中的特征层，利用无芯载板中的通孔柱作为转接IO通道和焊盘，使得转接载板的焊盘间距能够突破设备的解析能力进一步缩小，从而显著提高转接载板单位面积的IO通道数量，进一步节约PCB板上空间，以实现更高的集成密度。
本领域技术人员将会认识到，本发明不限于上下文中具体图示和描述的内容。而且，本发明的范围由所附权利要求限定，包括上文所述的各个技术特征的组合和子组合以及其变化和改进，本领域技术人员在阅读前述说明后将会预见到这样的组合、变化和改进。
在权利要求书中，术语“包括”及其变体例如“包含”、“含有”等是指所列举的组件被包括在内，但一般不排除其他组件。

Claims (17)

1.一种无特征层结构的转接载板的制造方法，包括如下步骤：
(a)准备临时承载板；
(b)对所述临时承载板制作包边；
(c)在临时承载板的上下表面上层压绝缘材料形成绝缘层；
(d)在所述绝缘层上开设通孔；
(e)用金属填充所述通孔；
(f)去除包边，并去除临时承载板。
2.根据权利要求1所述的无特征层结构的转接载板的制造方法，其中所述临时承载板包括上下表面分别覆有双层铜箔的绝缘板。
3.根据权利要求2所述的无特征层结构的转接载板的制造方法，其中所述临时承载板包括在所述绝缘板表面的第一铜箔和在所述第一铜箔表面的第二铜箔，所述第二铜箔的厚度为0.8μm～5μm。
4.根据权利要求2所述的无特征层结构的转接载板的制造方法，其中步骤(b)包括在所述临时承载板的周边用包覆材料包覆以密封双层铜箔的缝隙。
5.根据权利要求4所述的无特征层结构的转接载板的制造方法，其中步骤(b)中的所述包覆材料是铜。
6.根据权利要求1所述的无特征层结构的转接载板的制造方法，其中步骤(c)中的所述绝缘材料包括有机电绝缘材料。
7.根据权利要求6所述的无特征层结构的转接载板的制造方法，其中步骤(c)中的所述绝缘材料包括聚酰亚胺、环氧树脂、双马来酰亚胺/三嗪树脂、聚苯醚、聚丙烯酸酯、半固化片、膜状有机树脂或它们的组合。
8.根据权利要求1所述的无特征层结构的转接载板的制造方法，其中步骤(d)包括在所述绝缘层上通过激光、机械或光刻的方式开设通孔。
9.根据权利要求1所述的无特征层结构的转接载板的制造方法，其中步骤(e)包括采用电镀或化学镀的方式填充所述通孔。
10.根据权利要求1所述的无特征层结构的转接载板的制造方法，其中步骤(e)中的填充金属为铜，以形成铜通孔柱。
11.根据权利要求1所述的无特征层结构的转接载板的制造方法，其中步骤(f)包括用铣刀铣去所述包边。
12.一种无特征层结构的转接载板，其采用权利要求1～11中任一项所述的无特征层结构的转接载板的制造方法制备。
13.根据权利要求12所述的无特征层结构的转接载板，包括绝缘层和嵌入在所述绝缘层中的通孔柱层。
14.根据权利要求13所述的无特征层结构的转接载板，其中所述绝缘层包括聚酰亚胺、环氧树脂、双马来酰亚胺/三嗪树脂、聚苯醚、聚丙烯酸酯、半固化片、膜状有机树脂或它们的组合。
15.根据权利要求13所述的无特征层结构的转接载板，其中所述通孔柱层包括至少一个铜通孔柱。
16.根据权利要求13所述的无特征层结构的转接载板，其中所述通孔柱层包括不同尺寸的通孔柱。
17.根据权利要求13所述的无特征层结构的转接载板，其中所述通孔柱的端部与所述绝缘层平齐或高出所述绝缘层。
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