CN110235229B - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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Publication number
CN110235229B
CN110235229B CN201880006937.6A CN201880006937A CN110235229B CN 110235229 B CN110235229 B CN 110235229B CN 201880006937 A CN201880006937 A CN 201880006937A CN 110235229 B CN110235229 B CN 110235229B
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insulating film
interlayer insulating
semiconductor
semiconductor device
contact hole
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CN110235229A (zh
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浦上泰
加藤武宽
青井佐智子
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Denso Corp
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Denso Corp
Toyota Motor Corp
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6923—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
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    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/069—Manufacture or treatment of conductive parts of the interconnections by forming self-aligned vias or self-aligned contact plugs
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    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
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    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
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    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
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    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
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    • H10W20/48—Insulating materials thereof

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
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Application Number Priority Date Filing Date Title
JP2017006002A JP6828449B2 (ja) 2017-01-17 2017-01-17 半導体装置およびその製造方法
JP2017-006002 2017-01-17
PCT/JP2018/001260 WO2018135541A1 (ja) 2017-01-17 2018-01-17 半導体装置およびその製造方法

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CN110235229B true CN110235229B (zh) 2022-08-12

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JP (1) JP6828449B2 (enExample)
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WO2019069580A1 (ja) * 2017-10-05 2019-04-11 富士電機株式会社 半導体装置
JPWO2020031971A1 (ja) * 2018-08-07 2021-08-10 ローム株式会社 ＳｉＣ半導体装置
WO2020032206A1 (ja) 2018-08-10 2020-02-13 ローム株式会社 ＳｉＣ半導体装置
CN112567531A (zh) 2018-08-10 2021-03-26 罗姆股份有限公司 SiC半导体装置
JP7188230B2 (ja) * 2019-03-28 2022-12-13 株式会社デンソー 半導体装置
JP7443673B2 (ja) * 2019-04-15 2024-03-06 富士電機株式会社 炭化珪素半導体装置
JP7081564B2 (ja) * 2019-04-24 2022-06-07 株式会社デンソー 半導体装置とその製造方法
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JP7404722B2 (ja) * 2019-09-06 2023-12-26 富士電機株式会社 半導体装置
JP7476502B2 (ja) * 2019-09-06 2024-05-01 富士電機株式会社 半導体装置
US12369381B2 (en) * 2019-09-30 2025-07-22 Rohm Co., Ltd. Semiconductor device
JP7129397B2 (ja) * 2019-12-06 2022-09-01 ローム株式会社 ＳｉＣ半導体装置
JP7129436B2 (ja) * 2020-02-17 2022-09-01 ローム株式会社 ＳｉＣ半導体装置
JP7129437B2 (ja) * 2020-02-17 2022-09-01 ローム株式会社 ＳｉＣ半導体装置
US20230296987A1 (en) * 2020-08-12 2023-09-21 Applied Materials, Inc. Tool drift compensation with machine learning
US12477773B2 (en) * 2020-09-17 2025-11-18 Rohm Co., Ltd. Semiconductor device including terminal electrodes
JP7697255B2 (ja) * 2021-04-27 2025-06-24 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
US12490451B2 (en) * 2022-03-02 2025-12-02 Semiconductor Components Industries, Llc Process of forming an electronic device including a component structure adjacent to a trench
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US20230307507A1 (en) * 2022-03-25 2023-09-28 Fast SiC Semiconductor Incorporated Silicon carbide semiconductor device
JP7765881B2 (ja) * 2022-09-09 2025-11-07 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
TWI817895B (zh) * 2023-01-30 2023-10-01 李羿軒 具有創新邊緣終端部的半導體裝置
JP7834044B2 (ja) 2023-02-24 2026-03-23 三菱電機株式会社 半導体装置及び半導体装置の製造方法
WO2025052689A1 (ja) * 2023-09-04 2025-03-13 株式会社 東芝 半導体装置
CN119170507B (zh) * 2024-11-19 2025-03-21 芯联越州集成电路制造（绍兴）有限公司 一种半导体器件及其制造方法、电子装置

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