CN110036471B - 封装体基材和封装体基材的制造方法 - Google Patents
封装体基材和封装体基材的制造方法 Download PDFInfo
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- CN110036471B CN110036471B CN201780076472.7A CN201780076472A CN110036471B CN 110036471 B CN110036471 B CN 110036471B CN 201780076472 A CN201780076472 A CN 201780076472A CN 110036471 B CN110036471 B CN 110036471B
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Classifications
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- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/105—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L27/00
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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Abstract
本发明提供一种不倾斜地立设有能实现电连接的金属针的封装体基材和该封装体基材的制造方法。本发明的封装体基材包括基材和配置于上述基材表面的电极,其特征在于,金属针介由包含金属粉和热固性树脂的导电膏的固化物立设于上述电极上,上述金属粉包含低熔点金属和熔点比上述低熔点金属的熔点高的高熔点金属。
Description
技术领域
本发明涉及封装体基材和封装体基材的制造方法。
背景技术
近年来,集成电路的大容量化、高速化、低功耗化的需求激增,并且半导体封装体的小型化、薄型化的需求也激增。为实现半导体封装体的小型化、薄型化,已有人提出一种将逻辑类封装体基材、存储类封装体基材等不同的封装体基材进行层压所得到的Packageon Package(PoP)等3维封装体。
基本的PoP结构为:表面配置有电极的数个封装体基材介由焊料球互相层压。PoP中,各封装体基材通过焊料球电连接。作为含有这种结构的PoP,有专利文献1公开的以下层压型半导体封装体。
即,专利文献1公开了一种层压型半导体封装体,其含有:数个第1封装体基材,分别含有半导体器件的安装区域且互相介由层压用焊料球层压;第2封装体基材,含有和该数个第1封装体基材相对应大小的多段凹部,且覆盖所述数个第1封装体基材使所述数个第1封装体基材收纳于该多段凹部,包含介由连接用焊料球和所述数个第1封装体基材分别电连接的参考电位线路;安装用焊料球,设于位于所述数个第1封装体基材的最下方的所述第1封装体基材的下侧面和所述第2封装体基材的下端,其特征在于:所述数个第1封装体基材分别在与所述多段凹部的相对应的段部或所述多段凹部的底面和所述参考电位线路电连接。
专利文献1公开的层压型半导体封装体中,封装体基材之间的电连接使用的是焊料球。
若要使封装体基材更加小型化,可使配置在封装体基材表面的电极更进一步聚集。若要使电极聚集,也需使焊料球聚集。另一方面,为防止短路,焊料球之间需要一定的空间。焊料球的形状为大致球状,而球是不利于填充空间的形状。也就是说,即使想要使焊料球聚集,由于形状的制约无法充分地使焊料球聚集。
于是,作为使封装体基材彼此电连接的手段,有人尝试了使用柱状的金属针(metal pin)。
专利文献2公开了一种方法,该方法使用焊料膏将导电柱(柱状金属针)立设于第1基材,之后使用焊料膏将导电柱和第2基材连接,从而将第1基材和第2基材电连接。
【现有技术文献】
【专利文献】
【专利文献1】日本特开2012-160693号。
【专利文献2】日本特开2016-48728号。
发明内容
【发明要解决的技术问题】
专利文献2中,使用焊料膏将导电柱立设于第1基材时,首先加热焊料膏使其熔融,之后冷却焊料膏使其固化从而将导电柱固定于第1基材。
像这样,使用焊料膏将导电柱固定于第1基材时出现了如下问题:在焊料膏熔融时焊料膏的粘度过低,导电柱由于自重等而倾斜的问题、焊料膏熔融时的焊料膏的表面张力的变化导致导电柱倾斜的问题。
本发明用于解决上述技术问题,本发明目的在于提供一种不倾斜地立设有能实现电连接的金属针的封装体基材和该封装体基材的制造方法。
【解决技术问题的技术手段】
为解决上述技术问题,本发明人悉心研究的结果是发现通过将包含低熔点金属、高熔点金属和热固性树脂的导电膏用作使金属针固定于封装体基材的手段能使金属针不倾斜地立设于封装体基材,进而完成了本发明。
即,本发明的封装体基材包括基材和配置于上述基材表面的电极,其特征在于:金属针介由包含金属粉和热固性树脂的导电膏的固化物立设于上述电极上,上述金属粉包含低熔点金属和熔点比上述低熔点金属的熔点高的高熔点金属。
本发明的封装体基材中,立设有作为封装体基材之间的连接手段的金属针。金属针的形状为大致柱状,因此与使用大致球状的焊料球作为封装体基材之间的连接手段相比,能使金属针聚集。因此,能使本发明的封装体基材小型化,并能进一步使本发明的封装体基材层压所得到的PoP小型化及薄型化。
本发明的封装体基材中,金属针介由导电膏的固化物立设于电极上。即,在制造本发明的封装体基材时,使用导电膏将金属针固定于电极。比如,使用焊料将金属针固定于电极时,有时会出现由于焊料熔融时焊料的粘度过度下降、焊料的表面张力变化导致金属针倾斜的情况。
另一方面,上述导电膏含有热固性树脂,所以加热会固化。因此,与使用焊料相比,使用上述导电膏将金属针固定于电极时金属针不易倾斜。因此,本发明的封装体基材中,金属针的倾斜小。
本发明的封装体基材中,上述金属粉包含低熔点金属和熔点比上述低熔点金属的熔点高的高熔点金属。
金属粉包含低熔点金属的话,在加热导电膏时,低熔点金属会软化,导电膏的粘度会暂时下降。之后,导电膏的热固性树脂固化,成为导电膏的固化物。
在制造本发明的封装体基材时,使用低熔点金属的话,在导电膏被加热粘度暂时下降时,导电膏会毫无缝隙地和金属针接触。之后,导电膏会固化,因此金属针会被牢固地固定。即,金属粉包含低熔点金属时,封装体基材中,金属针会牢固地固定并立设于电极上。另外,金属粉包含高熔点金属的话能提高导电膏的导电性。
本发明的封装体基材中,优选上述导电膏的固化物和上述金属针之间存在上述低熔点金属和上述金属针的合金。
导电膏的固化物和金属针之间存在低熔点金属和金属针的合金意味着导电膏的固化物的一部分和金属针的一部分已经一体化。因此,这样的封装体基材中,金属针会牢固地固定并立设于电极上。另外,这样的合金耐热性优越,因此也能提高封装体基材的耐热性。另外,本说明书中,合金可以是低熔点金属元素和形成金属针的元素的混合物,也可以是这些元素之间的金属间化合物。
本发明的封装体基材中,优选上述低熔点金属的熔点为180℃以下。
低熔点金属的熔点超过180℃的话,加热导电膏时,容易出现在导电膏的粘度暂时下降之前热固性树脂就开始固化、导电膏的粘度下降的温度范围变窄的情况。因此,封装体基材中,金属针不易牢固地固定于电极上。
本发明的封装体基材中,优选上述低熔点金属包含从由铟、锡、铅及铋构成的群中选择的至少1种。这些金属具备适合作为低熔点金属的熔点及导电性。
本发明的封装体基材中,优选上述高熔点金属的熔点为800℃以上。
本发明的封装体基材中,优选上述高熔点金属包含从由铜、银、金、镍、银包铜及银包铜合金构成的群中选择的至少1种。这些金属导电性优越。因此,在封装体基材中,能提高金属针和电极间的导电性。另外,这些高熔点金属会和低熔点金属形成合金,因此会得到连续的导电通路。
另外,若导电膏的固化物不含低熔点金属而是只含有高熔点金属作为金属粉时,导电通路会变成只是高熔点金属之间的点接触以及高熔点金属和金属针的点接触,因此难以降低金属针和封装体基材间的连接电阻值。
本发明的封装体基材中,优选上述金属针包含从由铜、银、金及镍构成的群中选择的至少1种。这些金属导电性优越。因此能使封装体基材之间恰当地电连接。
本发明的封装体基材的制造方法是制造上述本发明的封装体基材的方法,其特征在于包含如下工序:基材准备工序,准备表面配置有电极的基材;印刷工序,将包含金属粉和热固性树脂的导电膏印刷于上述电极上;金属针配置工序,将金属针配置于上述导电膏上;金属针立设工序,通过加热上述导电膏使上述导电膏软化后随即固化成为上述导电膏的固化物,并介由上述导电膏的固化物将上述金属针立设于上述电极上,其中,上述金属粉包含低熔点金属和熔点比上述低熔点金属的熔点高的高熔点金属。
本发明的封装体基材的制造方法是制造上述本发明的封装体基材的方法,其特征在于包含如下工序:基材准备工序,准备表面配置有电极的基材;导电膏附着工序,使包含金属粉和热固性树脂的导电膏附着于金属针的端部;金属针配置工序,使上述导电膏接触上述电极,在上述电极上配置上述金属针;金属针立设工序,通过加热上述导电膏使上述导电膏软化后随即固化成为上述导电膏的固化物,并介由上述导电膏的固化物将上述金属针立设于上述电极上,其中,上述金属粉包含低熔点金属和熔点比上述低熔点金属的熔点高的高熔点金属。
【发明效果】
本发明的封装体基材中,立设有作为封装体基材之间的连接手段的金属针。金属针的形状为大致柱状,因此能使金属针充分地聚集。因此,能使本发明的封装体基材小型化,并能进一步使本发明的封装体基材层压所得到的PoP小型化及薄型化。
附图说明
【图1】图1(a)是本发明的封装体基材的一例的侧面概略示意图;图1(b)是图1(a)的俯视图;
【图2】图2(a)是配置有焊料球的封装体基材的一例的侧面概略示意图;图2(b)是图2(a)的俯视图;
【图3】图3(a)是包含图1(a)所示的封装体基材的PoP的一例的侧面概略示意图;图3(b)是包含图2(a)所示的封装体基材的PoP的一例的侧面概略示意图;
【图4】图4是本发明的封装体基材的电极、导电膏的固化物以及金属针的关系的一例的放大截面示意图;
【图5】图5是本发明的封装体基材的制造方法的工序中所含有的基材准备工序的示意图;
【图6】图6是本发明的封装体基材的制造方法的工序中所含有的印刷工序的示意图;
【图7】图7是本发明的封装体基材的制造方法的工序中所含有的金属针配置工序的示意图;
【图8】图8(a)和(b)是本发明的封装体基材的制造方法的工序中所含有的金属针立设工序的示意图;
【图9】图9(a)和(b)是使用焊料将金属针立设于配置在封装体基材表面的电极的方法的一例的示意图;
【图10】图10是本发明的封装体基材的制造方法的工序中所含有的导电膏附着工序的示意图;
【图11】图11是本发明的封装体基材的制造方法的工序中所含有的金属针配置工序的示意图;
【图12】图12(a)是实施例1所涉及的封装体基材的导电膏的固化物和金属针的边界的SEM照片;图12(b)是实施例1所涉及的封装体基材的导电膏的固化物和金属针的边界上锡的分布的分布图像;图12(c)是实施例1所涉及的封装体基材的导电膏的固化物和金属针的边界上铋的分布的分布图像;图12(d)是实施例1所涉及的封装体基材的导电膏的固化物和金属针的边界上铜的分布的分布图像;图12(e)是实施例1所涉及的封装体基材的导电膏的固化物和金属针的边界上银的分布的分布图像。
具体实施方式
本发明的封装体基材包括基材和配置于上述基材表面的电极,金属针介由包含金属粉和热固性树脂的导电膏的固化物立设于上述电极上,上述金属粉只要是包含低熔点金属和熔点比上述低熔点金属的熔点高的高熔点金属的结构即可,可以包含其他任何成分。
以下具体说明上述本发明的封装体基材的一例。但是本发明不限于以下实施方式,在不变更本发明的要旨的范围内能适宜变更并适用。
图1(a)是本发明的封装体基材的一例的侧面概略示意图。
图1(b)是图1(a)的俯视图。
图2(a)是配置有焊料球的封装体基材的一例的侧面概略示意图。图2(b)是图2(a)的俯视图。
图3(a)是包含图1(a)所示的封装体基材的PoP的一例的侧面概略示意图。
图3(b)是包含图2(a)所示的封装体基材的PoP的一例的侧面概略示意图。
图1(a)所示的封装体基材10是包括基材20和配置于基材20的表面21的电极30的封装体基材。金属针50介由包含金属粉和热固性树脂的导电膏的固化物40立设于电极30上。
另一方面,图2(a)所示的封装体基材110是包括基材120和配置于基材120的表面121的电极130的封装体基材。电极130上配置有焊料球160。
如图1(a)和(b)所示,金属针50的形状为大致圆柱状,而如图2(a)和(b)所示,焊料球160的形状为大致球状。
另外,图1(a)和(b)、以及图2(a)和(b)中,电极30和电极130的大小相同,金属针50和焊料球160的大小是使用这些封装体基材制作PoP时所需的大小。
如图2(b)所示,用俯视视角看封装体基材110的话,焊料球160的轮廓比配置于基材120的电极130的轮廓大。焊料球160之间接触的话会产生短路,因此封装体基材110中电极130配置为使焊料球160之间不接触。因此,封装体基材110中各电极130之间的间隔变大。
如图1(b)所示,用俯视视角看封装体基材10的话,金属针50的轮廓比配置于基材20的电极30的轮廓小。因此,封装体基材10中,能在不用担心金属针50之间的侧面接触的情况下配置电极30。因此,封装体基材10中各电极30之间的间隔变窄。
即,若要在封装体基材上使立体物聚集,则大致柱状的立体物比大致球状的立体物更有利。
基于如上理由,相较于焊料球160而言,金属针50能在封装体基材上聚集。因此,能使封装体基材10比封装体基材110小型化。
如图3(a)所示,封装体基材10上层压其他封装体基材11得到PoP1。此时,配置于封装体基材11的底部的电极31和金属针50的上部介由导电膏的固化物40连接。
另外,如图3(b)所示,封装体基材110上层压其他封装体基材111得到PoP101。此时,配置于封装体基材111的底部的电极131和焊料球160的上部连接。
比较图3(a)和图3(b)可知,与在封装体基材110上层压其他封装体基材111所得到的PoP101相比,在封装体基材10上进一步层压其他封装体基材11所得到的PoP1的宽度小且薄。
如上所述,PoP1的宽度比PoP101小的理由是金属针50比焊料球160更容易在封装体基材上聚集。
PoP1比PoP101薄的理由如下所述。
如图2(a)所示,焊料球160的上侧面为曲面状。另外,如图3(b)所示,配置于封装体基材111的底部的电极131的底面为平面状。
在连接焊料球160和电极131时,熔融焊料球160的上侧面后再进行连接,为了使焊料球160能充分覆盖电极131的底面,要用到稍微大一点的焊料球160。
另一方面,如图1(a)所示,金属针50的上侧面为平面状。另外,如图3(a)所示,配置于封装体基材11的底部的电极31的底面为平面状。并且金属针50的上侧面和电极31的底面介由导电膏的固化物40连接。即,PoP1中,不用像使用焊料球160的情况那样考虑焊料球160的上侧面的熔融而加大设计金属针50。因此,能使PoP1比PoP101薄。
基于如上理由,使用金属针50能使封装体基材10层压所得到的PoP1小型化及薄型化。
另外,如后述所示,封装体基材10中,金属针50介由导电膏的固化物40不倾斜地立设于基材20。因此,图3(a)所示的PoP1中,可以使用焊料连接配置于封装体基材11的底部的电极31和金属针50的上部。
封装体基材10中,金属针50的形状只要为大致柱状即可,无特别限定,比如可以是大致三棱柱状、大致四棱柱状、大致六棱柱状等棱柱状,也可以是大致圆柱状、大致椭圆柱状等。其中优选四棱柱状或圆柱状。
当金属针50是四棱柱状时,优选其底面为长50~300μm、宽50~300μm的大致长方形。
当金属针50是圆柱状时,优选其底面为直径50~200μm的大致圆形,更优选为70~150μm的大致圆形。金属针50的底面为上述形状和大小的话,能恰当地使金属针50聚集。
封装体基材10中,优选金属针50的密度为100~500针/1封装体,更优选300~400针/1封装体。另外,优选金属针50的间距为0.2~0.5mm。金属针50的间距指的是相邻的金属针50之间的距离。
像这样,通过使金属针50聚集,能让封装体基材10和层压封装体基材10所得到的PoP1变小。
金属针50的高度无特别限定,优选50~500μm。
金属针50的高度在上述范围内的话,层压封装体基材10能降低PoP1的高度。
封装体基材10中,优选金属针包含从由铜、银、金及镍构成的群中选择的至少1种。
这些金属导电性优越。因此,能使封装体基材之间恰当地电连接。
封装体基材10中,金属针50介由导电膏的固化物40立设于电极30上。即,在制造封装体基材10时,使用导电膏将金属针50固定于电极30。
比如,使用焊料将金属针固定于电极时,有时会出现由于焊料熔融时焊料的粘度过度下降、焊料的表面张力变化导致金属针倾斜的情况。
另一方面,导电膏含有热固性树脂所以加热会固化。因此,与使用焊料相比,使用上述导电膏将金属针固定于电极时金属针不易倾斜。因此,封装体基材10中金属针50的倾斜小。
另外,封装体基材10中,导电膏的固化物40包含固化的热固性树脂和金属粉。
固化的热固性树脂无特别限定,优选丙烯酸酯树脂、环氧树脂、苯酚树脂、聚氨酯树脂、硅树脂等固化而成物。
更加具体的热固性树脂可列举出双酚A型环氧树脂、溴化环氧树脂、双酚F型环氧树脂、(线型)酚醛型环氧树脂、脂环族环氧树脂、缩水甘油胺型环氧树脂、1,6-己二醇二缩水甘油醚等缩水甘油醚型环氧树脂、杂环环氧树脂、氨基苯酚型环氧树脂等。这些热固性树脂可以单独使用,也可以并用。
另外,优选固化前的热固性树脂的固化温度比后述的低熔点金属的熔点高10℃以上。另外,优选热固性树脂的固化温度的上限为200℃。
当热固性树脂的固化温度小于上述温度时,在低熔点金属软化前,热固性树脂就会固化,低熔点金属和金属针难以形成合金。另外,优选热固性树脂的固化温度为160~180℃。
另外,金属粉包含低熔点金属和熔点比上述低熔点金属的熔点高的高熔点金属。
金属粉只要包含低熔点金属和高熔点金属即可,无特别限定,比如可以为低熔点金属粒子和高熔点金属粒子的混合物,也可以为低熔点金属和高熔点金属合为一体的粒子,也可以为低熔点金属粒子、高熔点金属粒子以及低熔点金属和高熔点金属合为一体的粒子的混合物。
金属粉包含高熔点金属的话能提高导电膏的导电性。
金属粉包含低熔点金属的话,在加热导电膏时,低熔点金属软化,导电膏的粘度暂时下降。之后,导电膏的热固性树脂固化,成为导电膏的固化物。
在制造封装体基材10时,使用低熔点金属的话,在导电膏被加热粘度暂时下降时,导电膏会毫无缝隙地和金属针接触。之后,导电膏会固化,因此金属针50会被牢固地固定。即,在金属粉包含低熔点金属的封装体基材中,金属针50会牢固地固定并立设于电极30上。
另外,导电膏包含低熔点金属的话,导电膏固化时会形成金属针50和低熔点金属的合金。因此,金属针50会牢固地固定于电极30上,并且能提高导电膏的导电性。另外,这样的合金耐热性优越,因此也能提高封装体基材的耐热性。
以下用附图说明像这样存在合金的情况。
图4是本发明的封装体基材的电极、导电膏的固化物以及金属针的关系的一例的放大截面示意图。
如图4所示,封装体基材10中,导电膏的固化物40和金属针50之间存在低熔点金属和金属针50的合金70。即,导电膏的一部分和金属针50的至少一部分一体化。因此,封装体基材10中,金属针50牢固地固定并立设于电极30上。另外,合金70可以含有来自高熔点金属的元素。
能用能量色散X射线分析(EDS)确认导电膏的固化物40和金属针50之间是否存在合金70。
EDS的条件可以列举出使用安装在扫描电子显微镜(日本电子(株)制、型号:JSM-7800F)的能谱仪(日本电子(株)制、型号:JED-2300),在加速电压:3~15kV、3000倍下进行观察这一条件。
封装体基材10中,优选低熔点金属的熔点为180℃以下,更优选60~180℃,进一步优选120~145℃。
低熔点金属的熔点超过180℃的话,加热导电膏时,容易出现在导电膏的粘度暂时下降之前热固性树脂就开始固化、导电膏的粘度下降的温度范围变窄的情况。因此,封装体基材10中,金属针50不易牢固地固定于电极30上。
另外,低熔点金属的熔点小于60℃的话,导电膏的粘度下降的温度过低,因此在将金属针50固定于电极30上时,金属针50容易倾斜。另一方面,低熔点金属的熔点为60℃以上的话,封装体基材10中金属针50不易倾斜。
封装体基材10中,优选低熔点金属包含从由铟、锡、铅及铋构成的群中选择的至少1种,更优选锡。这些金属具备适合作为低熔点金属的熔点及导电性。
封装体基材10中,优选高熔点金属的熔点为800℃以上,更优选800~1500℃,进一步优选900~1100℃。
另外,优选高熔点金属包含从由铜、银、金、镍、银包铜及银包铜合金构成的群中选择的至少1种。这些金属导电性优越。因此,在封装体基材10中能提高金属针50和电极30之间的导电性。
封装体基材10中,金属粉包含上述低熔点金属和高熔点金属时,优选导电膏的固化物40和金属针50之间的合金70为锡和铜的合金。
低熔点金属和高熔点金属的重量比无特别限定,优选低熔点金属:高熔点金属=80:20~20:80。
低熔点金属的重量相对于高熔点金属的重量的比例比上述范围大的话,在制造本发明的封装体基材时,在使导电膏固化时,导电膏会暂时过于柔软,金属针容易倾斜。
低熔点金属的重量相对于高熔点金属的重量的比例比上述范围小的话,在制造本发明的封装体基材时,在使导电膏固化时,由于低熔点金属少,因此难以形成低熔点金属和金属针的合金。这样一来,金属针的固定强度容易变弱。
封装体基材10中,优选导电膏的固化物40中的金属粉的含有量为80~95重量%。
导电膏的固化物中的金属粉的含有量小于80重量%的话封装体基材的电阻值容易变高。导电膏的固化物中的金属粉的含有量超过95重量%的话,在制造本发明的封装体基材时,导电膏的粘度变高印刷性变差。这样一来,导电膏的固化物的印刷状态容易变差。
另外,封装体基材10中,基材20的材料无特别限定,可以是环氧树脂、BT树脂(双马来酰亚胺三嗪)、聚酰亚胺、氟碳树脂、聚苯醚、液晶聚合物、苯酚树脂、陶瓷等。另外,封装体基材10中,电极30的材料无特别限定,可以是铜、锡、镍、铝、金、银等。
优选封装体基材10的大小为长10~30mm、宽10~50mm的大致长方形。
另外,可根据需要将焊料球配置于本发明的封装体基材。即,本发明的封装体基材中,介由包含金属粉和热固性树脂的导电膏的固化物而立设的金属针和焊料球可混合存在。
接下来,举以下2例说明这样的本发明的封装体基材的制造方法。
(本发明的封装体基材的制造方法的第1例)
本发明的封装体基材的制造方法的第1例的特征在于包含如下工序:
(1)基材准备工序,准备表面配置有电极的基材;
(2)印刷工序,在上述电极上印刷包含金属粉和热固性树脂的导电膏;
(3)金属针配置工序,在上述导电膏上配置金属针;
(4)金属针立设工序,通过加热上述导电膏使上述导电膏软化之后随即固化成为上述导电膏的固化物,并介由上述导电膏的固化物将上述金属针立设于上述电极上。
以下用附图说明各工序。
图5是本发明的封装体基材的制造方法的工序中所含有的基材准备工序的示意图。
图6是本发明的封装体基材的制造方法的工序中所含有的印刷工序的示意图。
图7是本发明的封装体基材的制造方法的工序中所含有的金属针配置工序的示意图。
图8(a)和(b)是本发明的封装体基材的制造方法的工序中所含有的金属针立设工序的示意图。
(1)基材准备工序
如图5所示,首先准备表面21配置有电极30的基材20。
基材20和电极30的优选材料如上述本发明的封装体基材的说明中所述,因此这里不再赘述。另外,表面配置有电极的基材能用众所周知的方法制作。
(2)印刷工序
(2-1)导电膏的准备
本工序中首先制作导电膏。能够通过混合金属粉和热固性树脂来制造导电膏。在要制作的导电膏中,金属粉和热固性树脂的重量比无特别限定,优选热固性树脂:金属粉=20:80~5:95。
另外,要制作的导电膏中,使用低熔点金属和高熔点金属作为金属粉。导电膏所含有的热固性树脂、低熔点金属和高熔点金属的优选材料和性质如上述本发明的封装体基材的说明中所述,因此这里不再赘述。
另外,在制作导电膏时,除了金属粉和热固性树脂以外,也可混合固化剂、助焊剂、固化促进剂、消泡剂、整平剂、有机溶剂、无机填料等。
固化剂可以列举出2-苯基-4,5-二羟基甲基咪唑、2-苯基咪唑、2-十一烷基咪唑、2-十七烷基咪唑、2-乙基咪唑、2-苯基咪唑、2-乙基-4-甲基咪唑、1-氰基乙基-2-十一烷基咪唑、1-氰基乙基-2-十一烷基咪唑鎓偏苯三酸盐等。
助焊剂可以列举出氯化锌、乳酸、柠檬酸、油酸、硬脂酸、谷氨酸、苯甲酸、草酸、麸胺酸盐酸盐、盐酸苯胺、溴化十六烷基吡啶、尿素(urea)、羟乙基月桂胺、聚乙二醇月桂胺、油烯丙二胺、三乙醇胺、甘油、肼、松香等。
(2-2)导电膏的印刷
接下来,如图6所示,印刷包含金属粉46和热固性树脂47的导电膏45。导电膏45的印刷方法无特别限定,能用网印等众所周知的方法进行。
(3)金属针配置工序
接下来,如图7所示,在导电膏45上配置金属针50。优选配置金属针50使其密度为300~400针/1封装体。像这样,通过使金属针50聚集能缩小要制造的封装体基材。另外,也能缩小制造出的封装体基材层压所得到的PoP。金属针50的优选形状、材料如上述本发明的封装体基材的说明中所述,因此这里不再赘述。
(4)金属针立设工序
接下来,如图8(a)所示,通过加热导电膏45使导电膏45软化后随即固化成为导电膏的固化物40。由此,如图8(b)所示,能介由导电膏的固化物40使金属针50立设于电极30上。
与使用焊料相比,使用导电膏45将金属针50固定于电极30时金属针50不易倾斜。将该原理和使用焊料将金属针固定于电极的情况进行比较说明。
图9(a)和(b)是使用焊料将金属针立设于配置在封装体基材表面的电极的方法的一例的示意图。
如图9(a)所示,为了将金属针150立设于电极130上而使用焊料161时,首先在电极130上配置焊料161,并在其上配置金属针150。
接下来,如图9(b)所示,加热焊料161使其熔融,之后冷却焊料161使其固化从而将金属针150固定于电极130。
像这样使用焊料161将金属针150固定于电极130时,如图9(b)所示,在使焊料161熔融时,由于焊料161的粘度过度下降、焊料161的表面张力变化,金属针150变得容易倾斜。像这样在金属针150倾斜的状态下冷却并固化焊料161,因此金属针150容易在金属针150倾斜的状态下固定于电极130。
另一方面,如图8(a)和(b)所示,使用导电膏45将金属针50立设于电极30时,导电膏45含有热固性树脂47所以加热会固化。因此,与使用焊料相比,使用导电膏45将金属针50固定于电极30时金属针50不易倾斜。
另外,优选金属针立设工序中导电膏45的加热温度是比低熔点金属的熔点高10℃以上的温度。另外,更优选加热温度的上限是200℃。
加热温度小于比低熔点金属的熔点高10℃的温度的话,则在低熔点金属软化前,热固性树脂47就会固化,低熔点金属和金属针50难以形成合金。
加热温度超过200℃的话,导电膏45的固化物所含有的金属粉、固化的热固性树脂以及金属针容易劣化。
另外,导电膏45含有低熔点金属和高熔点金属,所以加热导电膏45时低熔点金属软化,导电膏45的粘度暂时下降。此时,导电膏45会毫无缝隙地接触金属针50。
之后,导电膏45会固化,因此金属针50会被牢固地固定。即,金属粉含有低熔点金属,因此能将金属针50牢固地固定于电极30。另外,导电膏45的粘度暂时下降时的、粘度的极小值优选40~200Pa・s,更优选60~180Pa・s。
另外,金属粉含有低熔点金属,因此导电膏45固化时,低熔点金属会形成和金属针50的合金。因此,金属针50会牢固地固定于电极30上,并且能提高导电膏的固化物40的导电性。另外,这样的合金耐热性优越,因此也能提高制造的封装体基材的耐热性。
本说明书中的“粘度”是指使用流变仪(型号:MCR302、制造商:Anton Parr公司)在以下条件下测定的粘度。
升温速度:5℃/min
测定夹具:PP25
振幅γ:0.1%
频率f:1Hz
温度:25~200℃。
经过以上工序能制造本发明的封装体基材。
(本发明的封装体基材的制造方法的第2例)
本发明的封装体基材的制造方法的第2例的特征在于包含如下工序:
(1)基材准备工序,准备表面配置有电极的基材;
(2)导电膏附着工序,使包含金属粉和热固性树脂的导电膏附着于金属针的端部;
(3)金属针配置工序,使导电膏接触电极,在电极上配置金属针;
(4)金属针立设工序,通过加热导电膏使导电膏软化并随即固化成为导电膏的固化物,并介由导电膏的固化物将金属针立设于电极上。
即,本发明的封装体基材的制造方法的第2例是将上述本发明的封装体基材的制造方法的第1例的(2)印刷工序和(3)金属针配置工序置换为以下的(2´)导电膏附着工序和(3´)金属针配置工序而成的封装体基材的制造方法。
图10是本发明的封装体基材的制造方法的工序中所含有的导电膏附着工序的示意图。
图11是本发明的封装体基材的制造方法的工序中所含有的金属针配置工序的示意图。
(2´)导电膏附着工序
首先,如上述“(2-1)导电膏的准备”中所述,制作包含金属粉和热固性树脂的导电膏。
接下来,如图10所示,本工序中,使包含金属粉46和热固性树脂47的导电膏45附着于金属针50的端部51。
使导电膏45附着于金属针50的端部51的方法无特别限定,比如可以用浸涂法(dip)使其附着。金属针50的优选形状、材料等、以及导电膏45的优选组成如上所述,因此这里不再赘述。
(3´)金属针配置工序
如图11所示,本工序中,使附着在金属针50的端部51的导电膏45接触电极30,在电极30上配置金属针50。金属针50的优选密度如上所述,因此这里不再赘述。
【实施例】
以下通过实施例进一步具体说明本发明,但本发明不被这些实施例所限定。
(实施例1)
(1)基材准备工序
准备了表面配置有铜电极的环氧树脂基材。
(2)印刷工序
(2-1)导电膏的准备
按表1所示的比例配混原材料,使用行星搅拌机在500rpm搅拌30分钟,制作了导电膏。
【表1】
表1中,原材料的数值表示的是重量份。
表1中,关于银包铜粉,平均粒径为2μm,银的熔点为962℃,铜的熔点为1085℃。
表1中,银粉的平均粒径为5μm,熔点为962℃。
表1中,Sn42%-Bi58%合金的平均粒径为10μm,熔点为139℃。
表1中,Sn80%-Bi20%合金的平均粒径为5μm,熔点为139℃。
(2-2)导电膏的印刷
使用含有数个孔径100μm、厚度60μm的开口部的金属掩模印刷得到的导电膏。
(3)金属针配置工序
接下来,在导电膏上配置了直径150μm、高200μm的大致圆柱状的由铜制成的金属针。
(4)金属针立设工序
接下来,将导电膏在180℃加热1小时,从而使导电膏软化后随即固化成为导电膏的固化物。由此,介由导电膏的固化物将金属针立设在了上述电极上。
经过以上工序制造了实施例1所涉及的封装体基材。
(实施例2)和(实施例3)、以及(比较例1)
除了将导电膏的原材料变更为表1所示的组分以外,其余与实施例1相同地制造了实施例2和实施例3、以及比较例1所涉及的封装体基材。
(印刷性的评价)
制造实施例1~3和比较例1所涉及的封装体基材时的“(2-2)导电膏的印刷”中,通过肉眼观察对导电膏印刷了几处这一个数进行计数,评价了印刷性。
评价基准如下所述。另外,转印率(%)如下算出:导电膏介由金属掩模的开口部转印到基材几处这一数量/金属掩模的开口部的总数×100。评价结果显示于表2。
○:转印率100%
△:转印率80%~小于100%
×:转印率小于80%。
【表2】
(导电膏的固化物和金属针的边界的观察)
从制造出的实施例1所涉及的封装体基材取出了导电膏的固化物和金属针,且使其含有导电膏的固化物和金属针的边界。
截断导电膏的固化物和金属针且使得导电膏的固化物和金属针的边界显示于截断面,并用扫描电子显微镜(SEM)观察,进一步用EDS对截断面的锡、铋、铜、银进行元素分析,并测绘了其分布。结果显示于图12(a)~(e)。
图12(a)是实施例1所涉及的封装体基材的导电膏的固化物和金属针的边界的SEM照片。
图12(b)是实施例1所涉及的封装体基材的导电膏的固化物和金属针的边界上锡的分布的分布图像。
图12(c)是实施例1所涉及的封装体基材的导电膏的固化物和金属针的边界上铋的分布的分布图像。
图12(d)是实施例1所涉及的封装体基材的导电膏的固化物和金属针的边界上铜的分布的分布图像。
图12(e)是实施例1所涉及的封装体基材的导电膏的固化物和金属针的边界上银的分布的分布图像。
图12(a)~(e)中,编号40表示的部分是导电膏的固化物部分,编号50表示的部分是金属针部分。
图12(b)~(e)中,编号46b、46c、46d及46e表示的部分分别是锡、铋、铜及银分布的部分。图12(b)和(d)中,编号70表示的部分是锡和铜的合金。
如图12(b)和(d)所示,导电膏的固化物和金属针之间存在锡和铜的合金。即,导电膏的固化物的一部分和金属针的一部分一体化。因此,实施例1的封装体基材中,金属针被牢固地固定于电极上。
(金属针的倾斜观察)
肉眼观察并评价了制造出的实施例1~3、以及比较例1所涉及的封装体基材的金属针的倾斜。
评价结果如下所述。结果显示于表3。
◎:金属针倾斜的比例小于5%。
○:金属针倾斜的比例为5~10%。
×:金属针倾斜的比例超过10%。
【表3】
通过如上结果知道了实施例1~3所涉及的封装体基材中金属针倾斜少,适于层压封装体基材。
编号说明
1、101 PoP
10、110封装体基材
20、120基材
21、121基材的表面
30、31、130、131电极
40导电膏的固化物
45导电膏
46金属粉
47热固性树脂
50、150金属针
51金属针的端部
70合金
160焊料球
161焊料
Claims (9)
1.一种封装体基材,所述封装体基材包括基材和配置于所述基材表面的电极,其特征在于:
金属针介由包含金属粉和热固性树脂的导电膏的固化物立设于所述电极上,
所述金属粉包含低熔点金属和熔点比所述低熔点金属的熔点高的高熔点金属,
固化前的所述热固性树脂的固化温度比所述低熔点金属的熔点高10℃以上。
2.根据权利要求1所述的封装体基材,其特征在于:
所述导电膏的固化物和所述金属针之间存在所述低熔点金属和所述金属针的合金。
3.根据权利要求1或2所述的封装体基材,其特征在于:
所述低熔点金属的熔点为180℃以下。
4.根据权利要求1或2所述的封装体基材,其特征在于:
所述低熔点金属包含从由铟、锡、铅及铋构成的群中选择的至少1种。
5.根据权利要求1或2所述的封装体基材,其特征在于:
所述高熔点金属的熔点为800℃以上。
6.根据权利要求1或2所述的封装体基材,其特征在于:
所述高熔点金属包含从由铜、银、金、镍、银包铜及银包铜合金构成的群中选择的至少1种。
7.根据权利要求1或2所述的封装体基材,其特征在于:
所述金属针包含从由铜、银、金及镍构成的群中选择的至少1种。
8.一种封装体基材的制造方法,所述制造方法是权利要求1至7的任意一项所述的封装体基材的制造方法,其特征在于包含如下工序:
基材准备工序,准备表面配置有电极的基材;
印刷工序,将包含金属粉和热固性树脂的导电膏印刷在所述电极上;
金属针配置工序,在所述导电膏上配置金属针;
金属针立设工序,通过加热所述导电膏使所述导电膏软化后随即固化成为所述导电膏的固化物,并介由所述导电膏的固化物将所述金属针立设于所述电极上;
其中,所述金属粉包含低熔点金属和熔点比所述低熔点金属的熔点高的高熔点金属,
固化前的所述热固性树脂的固化温度比所述低熔点金属的熔点高10℃以上。
9.一种封装体基材的制造方法,所述制造方法是权利要求1至7的任意一项所述的封装体基材的制造方法,其特征在于包含如下工序:
基材准备工序,准备表面配置有电极的基材;
导电膏附着工序,让包含金属粉和热固性树脂的导电膏附着于金属针的端部;
金属针配置工序,使所述导电膏接触所述电极,在所述电极上配置所述金属针;
金属针立设工序,通过加热所述导电膏使所述导电膏软化后随即固化成为所述导电膏的固化物,并介由所述导电膏的固化物将所述金属针立设于所述电极上;
其中,所述金属粉包含低熔点金属和熔点比所述低熔点金属的熔点高的高熔点金属,
固化前的所述热固性树脂的固化温度比所述低熔点金属的熔点高10℃以上。
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US20200091050A1 (en) | 2020-03-19 |
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