TWI710071B - 封裝基板及封裝基板之製造方法 - Google Patents
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- TWI710071B TWI710071B TW106139913A TW106139913A TWI710071B TW I710071 B TWI710071 B TW I710071B TW 106139913 A TW106139913 A TW 106139913A TW 106139913 A TW106139913 A TW 106139913A TW I710071 B TWI710071 B TW I710071B
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- 239000000758 substrate Substances 0.000 title claims abstract description 239
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 36
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 24
- 229910052751 metal Inorganic materials 0.000 claims abstract description 382
- 239000002184 metal Substances 0.000 claims abstract description 382
- 238000002844 melting Methods 0.000 claims abstract description 136
- 230000008018 melting Effects 0.000 claims abstract description 127
- 239000000843 powder Substances 0.000 claims abstract description 47
- 229920005989 resin Polymers 0.000 claims abstract description 41
- 239000011347 resin Substances 0.000 claims abstract description 41
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 37
- 239000000463 material Substances 0.000 claims abstract description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 22
- 229910045601 alloy Inorganic materials 0.000 claims description 21
- 239000000956 alloy Substances 0.000 claims description 21
- 239000010949 copper Substances 0.000 claims description 21
- 229910052802 copper Inorganic materials 0.000 claims description 18
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 15
- 238000007639 printing Methods 0.000 claims description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 14
- 229910052709 silver Inorganic materials 0.000 claims description 14
- 239000004332 silver Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 11
- 238000002360 preparation method Methods 0.000 claims description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 9
- 229910052718 tin Inorganic materials 0.000 claims description 9
- 229910052797 bismuth Inorganic materials 0.000 claims description 8
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 description 69
- 238000010586 diagram Methods 0.000 description 16
- 150000002739 metals Chemical class 0.000 description 16
- 238000009826 distribution Methods 0.000 description 13
- 239000003822 epoxy resin Substances 0.000 description 11
- 229920000647 polyepoxide Polymers 0.000 description 11
- 101150025129 POP1 gene Proteins 0.000 description 10
- 230000007423 decrease Effects 0.000 description 10
- 239000011135 tin Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 6
- 239000002923 metal particle Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 229910001128 Sn alloy Inorganic materials 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- -1 fluororesin Polymers 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 239000004848 polyfunctional curative Substances 0.000 description 2
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 2
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 2
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- HCYSJBICYOIBLS-UHFFFAOYSA-N 2-(dodecylamino)ethanol Chemical compound CCCCCCCCCCCCNCCO HCYSJBICYOIBLS-UHFFFAOYSA-N 0.000 description 1
- WTYYGFLRBWMFRY-UHFFFAOYSA-N 2-[6-(oxiran-2-ylmethoxy)hexoxymethyl]oxirane Chemical compound C1OC1COCCCCCCOCC1CO1 WTYYGFLRBWMFRY-UHFFFAOYSA-N 0.000 description 1
- CDAWCLOXVUBKRW-UHFFFAOYSA-N 2-aminophenol Chemical compound NC1=CC=CC=C1O CDAWCLOXVUBKRW-UHFFFAOYSA-N 0.000 description 1
- PQAMFDRRWURCFQ-UHFFFAOYSA-N 2-ethyl-1h-imidazole Chemical compound CCC1=NC=CN1 PQAMFDRRWURCFQ-UHFFFAOYSA-N 0.000 description 1
- YTWBFUCJVWKCCK-UHFFFAOYSA-N 2-heptadecyl-1h-imidazole Chemical compound CCCCCCCCCCCCCCCCCC1=NC=CN1 YTWBFUCJVWKCCK-UHFFFAOYSA-N 0.000 description 1
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 1
- LLEASVZEQBICSN-UHFFFAOYSA-N 2-undecyl-1h-imidazole Chemical compound CCCCCCCCCCCC1=NC=CN1 LLEASVZEQBICSN-UHFFFAOYSA-N 0.000 description 1
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 1
- SZUPZARBRLCVCB-UHFFFAOYSA-N 3-(2-undecylimidazol-1-yl)propanenitrile Chemical compound CCCCCCCCCCCC1=NC=CN1CCC#N SZUPZARBRLCVCB-UHFFFAOYSA-N 0.000 description 1
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 1
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- WHUUTDBJXJRKMK-UHFFFAOYSA-N Glutamic acid Natural products OC(=O)C(N)CCC(O)=O WHUUTDBJXJRKMK-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 description 1
- ZDXPYRJPNDTMRX-VKHMYHEASA-N L-glutamine Chemical compound OC(=O)[C@@H](N)CCC(N)=O ZDXPYRJPNDTMRX-VKHMYHEASA-N 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- 239000005642 Oleic acid Substances 0.000 description 1
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- UUQQGGWZVKUCBD-UHFFFAOYSA-N [4-(hydroxymethyl)-2-phenyl-1h-imidazol-5-yl]methanol Chemical compound N1C(CO)=C(CO)N=C1C1=CC=CC=C1 UUQQGGWZVKUCBD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- MMCPOSDMTGQNKG-UJZMCJRSSA-N aniline;hydrochloride Chemical compound Cl.N[14C]1=[14CH][14CH]=[14CH][14CH]=[14CH]1 MMCPOSDMTGQNKG-UJZMCJRSSA-N 0.000 description 1
- UHOVQNZJYSORNB-UHFFFAOYSA-N benzene Substances C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- 239000004841 bisphenol A epoxy resin Substances 0.000 description 1
- 239000004842 bisphenol F epoxy resin Substances 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- DVBJBNKEBPCGSY-UHFFFAOYSA-M cetylpyridinium bromide Chemical compound [Br-].CCCCCCCCCCCCCCCC[N+]1=CC=CC=C1 DVBJBNKEBPCGSY-UHFFFAOYSA-M 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- JRBPAEWTRLWTQC-UHFFFAOYSA-N dodecylamine Chemical compound CCCCCCCCCCCCN JRBPAEWTRLWTQC-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000002529 flux (metallurgy) Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000004220 glutamic acid Substances 0.000 description 1
- 235000013922 glutamic acid Nutrition 0.000 description 1
- ZDXPYRJPNDTMRX-UHFFFAOYSA-N glutamine Natural products OC(=O)C(N)CCC(N)=O ZDXPYRJPNDTMRX-UHFFFAOYSA-N 0.000 description 1
- 235000004554 glutamine Nutrition 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 235000021313 oleic acid Nutrition 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001955 polyphenylene ether Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 239000011592 zinc chloride Substances 0.000 description 1
- 235000005074 zinc chloride Nutrition 0.000 description 1
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4867—Applying pastes or inks, e.g. screen printing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4827—Materials
- H01L23/4828—Conductive organic material or pastes, e.g. conductive adhesives, inks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
- H01L23/4924—Bases or plates or solder therefor characterised by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/105—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L27/00
-
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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Abstract
本發明係提供可電連接之金屬銷已不傾斜而直立設置的封裝基板及該封裝基板之製造方法。本發明之封裝基板具有基材與配置於前述基材表面之電極,於前述電極上介著包含金屬粉及熱硬化性樹脂的導電性糊之硬化物而直立設置有金屬銷,前述金屬粉含有低熔點金屬與高熔點金屬,該高熔點金屬具有較前述低熔點金屬熔點更高之熔點。
Description
本發明係有關於封裝基板及封裝基板之製造方法。
近年來,隨追求積體電路之大容量化、高速化、低耗電力化,同時亦追求半導體封裝之小型化或薄型化。為實現半導體封裝之小型化或薄型化,已有提案一種將邏輯系封裝基板或記憶系封裝基板等相異之封裝基板予以積層的Package on Package(PoP:堆疊式封裝)等之3次元封裝。
基本之PoP結構係表面配置有電極之多數個封裝基板介著焊球互相積層的結構。PoP中各封裝基板介著焊球電連接。 具有如此結構之PoP,專利文獻1中揭示有如以下之積層型半導體封裝。
即,專利文獻1中揭示了一種積層型半導體封裝,其特徵在於具有:多數個第1封裝基板,其各有半導體元件之安裝區域,且互相介著積層用焊球積層;第2封裝基板,其有對應該多數個第1封裝基板之大小的多段凹部,且係包覆前述多數個第1封裝基板以使前述多數個第1封裝基板容納於該多段凹部,該第2封裝基板包含可介著連接用焊球分別與前述多數個第1封裝基板電連接的基準電位配線;及安裝用焊球,其設於位在前述多數個第1封裝基板中最下段之前述第1封裝基板的下面及前述第2封裝基板下端;前述多數個第1封裝基板於其各對應前述多段凹部之段部或前述多段凹部之底面,與前述基準電位配線電連接。
專利文獻1所揭示之積層型半導體封裝中,封裝基板彼此之電連接是使用焊球。 將封裝基板更小型化的情況下,可考慮使配置於封裝基板表面之電極更為密集。如此欲使電極密集的話,亦需使焊球密集。另一方面,為防止短路,焊球彼此之間需要一定的空間。焊球之形狀為略球狀,而球狀係不利於填充空間的形狀。換言之,即使欲使焊球密集,因受限於形狀而尚未能使焊球充分地密集。 於是,有人嘗試了使用柱狀之金屬銷來作為電連接封裝基板彼此之元件。
專利文獻2中揭示了一種電連接方法,係使用焊料糊將導電性柱(柱狀金屬銷)直立設置於第1基板,之後,使用焊料糊將導電性柱連接於第2基板,以電連接第1基板與第2基板。 先前技術文獻 專利文獻
專利文獻1:日本專利特開2012-160693號公報 專利文獻2:日本專利特開2016-48728號公報
發明概要 發明欲解決之課題 專利文獻2中於使用焊料糊將導電性柱直立設置於第1基板時,首先加熱焊料糊使其熔融,之後,冷卻焊料糊使其固化,藉此而將導電性柱固定於第1基板。 如此,使用焊料糊將導電性柱固定於第1基板時,於焊料糊熔融之際,焊料糊之黏度將變得過低,而有導電性柱因自重等傾斜的問題、或熔融焊料糊時因焊料糊之表面張力變化造成導電性柱傾斜的問題。
本發明係為解決前述課題而作成者,本發明之目的係提供已直立而不傾斜地設置有可電連接之金屬銷的封裝基板及該封裝基板之製造方法。 用以解決課題之手段
為解決前述課題,本發明人反覆致力研究之結果,發現藉由使用包含低熔點金屬、高熔點金屬及熱硬化性樹脂之導電性糊來作為用以將金屬銷固定於封裝基板的手段,即可使金屬銷不傾斜而直立設置於封裝基板,因而完成本發明。
換言之,本發明之封裝基板具有基材與配置於前述基材表面之電極,於前述電極上介著包含金屬粉及熱硬化性樹脂的導電性糊之硬化物而直立設置有金屬銷,前述金屬粉含有低熔點金屬與高熔點金屬,該高熔點金屬具有較前述低熔點金屬熔點更高之熔點。
本發明封裝基板中,直立設置有作為封裝基板彼此之連接機構的金屬銷。因金屬銷之形狀為略柱狀,較作為封裝基板彼此之連接機構使用的略球狀之焊球,可使金屬銷密集。因此,可使本發明封裝基板小型化,更可使已積層有本發明封裝基板的PoP小型化及薄型化。
本發明封裝基板中,於電極上介著導電性糊之硬化物直立設置有金屬銷。換言之,於製造本發明封裝基板時,使用導電性糊將金屬銷固定於電極。 以使用例如焊料將金屬銷固定於電極的情況而言,於焊料熔融之際會有焊料黏度過度下降、或因焊料之表面張力變化導致金屬銷傾斜的情形。 另一方面,前述導電性糊因含有熱硬化性樹脂故利用加熱而硬化。因此,於使用前述導電性糊將金屬銷固定於電極時,金屬銷較使用焊料的情況來得不易傾斜。因此,本發明封裝基板中金屬銷之傾斜小。
本發明封裝基板中,前述金屬粉包含低熔點金屬高熔點金屬,該高熔點金屬與有具較前述低熔點金屬熔點更高之熔點。 金屬粉若包含低熔點金屬,於加熱導電性糊時,低熔點金屬會軟化,導電性糊之黏度將暫時下降。之後,導電性糊之熱硬化性樹脂硬化,成為導電性糊之硬化物。 製造本發明封裝基板時若使用低熔點金屬,導電性糊受到加熱而黏度暫時下降之際,導電性糊將無縫隙地與金屬銷接觸。之後,因導電性糊硬化,故金屬銷可堅固地被固定。 即,在金屬粉包含低熔點金屬的情況下,封裝基板中金屬銷係堅固地固定且直立設置於電極上。 又,金屬粉若包含高熔點金屬的話,可提升導電性糊之導電性。
本發明封裝基板中,以於前述導電性糊之硬化物與前述金屬銷之間存在有前述低熔點金屬與前述金屬銷之合金為佳。 所謂於導電性糊之硬化物與金屬銷之間存在有低熔點金屬與金屬銷之合金,係使導電性糊之硬化物之一部分與金屬銷之一部分一體化之意。因此,如此之封裝基板中金屬銷將堅固地固定且直立設置於電極上。 此外,如此之合金因耐熱性優異,故亦可提升封裝基板之耐熱性。 再者,本說明書中之合金可為低熔點金屬元素與構成金屬銷之元素的混合物,亦可為該等元素彼此之金屬間化合物。
本發明封裝基板中,前述低熔點金屬之熔點以180℃以下為佳。 若低熔點金屬之熔點超過180℃的話,於加熱導電性糊之際,將容易產生以下情況:在導電性糊之黏度暫時下降前,硬化性樹脂即開始硬化;或導電性糊之黏度下降的溫度範圍變小。因此,封裝基板中金屬銷將不易堅固地固定於電極上。
本發明封裝基板中,前述低熔點金屬以包含選自於由銦、錫、鉛及鉍所構成群組中之至少1種為佳。該等金屬具有適合作為低熔點金屬之熔點及導電性。
本發明封裝基板中,前述高熔點金屬之熔點以800℃以上為佳。
本發明封裝基板中,前述高熔點金屬以包含選自於由銅、銀、金、鎳、鍍銀銅及鍍銀銅合金所構成群組中之至少1種為佳。 該等金屬之導電性優異。因此,可提升封裝基板中金屬銷與電極間之導電性。 又,因該等高熔點金屬與低熔點金屬形成合金,故可得連續之導電路徑。 再者,導電性糊之硬化物中,若金屬粉未含低熔點金屬僅含有高熔點金屬的話,因導電路徑僅為高熔點金屬彼此之點接觸及高熔點金屬與金屬銷之點接觸,故不易降低金屬銷與封裝基板間之互連電阻值。
本發明封裝基板中,前述金屬銷以包含選自於由銅、銀、金及鎳所構成群組中之至少1種為佳。 該等金屬之導電性優異。因此,可適當地電連接封裝基板彼此。
本發明之封裝基板之製造方法係用以製造前述本發明封裝基板,該方法包含:基材準備步驟,準備表面已配置有電極之基材;印刷步驟,於前述電極上印刷導電性糊,該導電性糊包含金屬粉及熱硬化性樹脂;金屬銷配置步驟,於前述導電性糊上配置金屬銷;及金屬銷直立設置步驟,藉由加熱前述導電性糊使前述導電性糊軟化然後硬化,而作成前述導電性糊之硬化物,並介著前述導電性糊之硬化物將前述金屬銷直立設置於前述電極上。其中前述金屬粉包含低熔點金屬與高熔點金屬,該高熔點金屬具有較前述低熔點金屬熔點更高之熔點。
本發明之封裝基板之製造方法係用以製造如前述本發明封裝基板的方法,包含:基材準備步驟,準備表面已配置有電極之基材;導電性糊附著步驟,使包含金屬粉及熱硬化性樹脂之導電性糊附著於金屬銷之端部;金屬銷配置步驟,將前述金屬銷配置於前述電極上並使該等金屬銷與前述導電性糊接觸;及金屬銷直立設置步驟,藉由加熱前述導電性糊使前述導電性糊軟化後然硬化而作成前述導電性糊之硬化物,並介著前述導電性糊之硬化物,將前述金屬銷直立設置於前述電極上。其中前述金屬粉包含低熔點金屬與高熔點金屬,該高熔點金屬具有較前述低熔點金屬熔點更高之熔點。 發明效果
本發明封裝基板中,直立設置有作為封裝基板彼此之連接機構的金屬銷。因金屬銷之形狀為略柱狀,故可使金屬銷充分地密集。因此,可使本發明封裝基板小型化,更可使已積層有本發明封裝基板的PoP小型化及薄型化。
用以實施發明之形態 本發明封裝基板具有基材與配置於前述基材表面之電極,於前述電極上,介著包含金屬粉及熱硬化性樹脂的導電性糊之硬化物而直立設置有金屬銷,前述金屬粉只要係含有低熔點金屬,與具較前述低熔點金屬熔點更高熔點的高熔點金屬之構成即可,亦可含有其他任何結構。 以下具體地說明如此之本發明封裝基板之一例。然而,本發明並未受以下實施形態所限定,可於未變更本發明要旨之範圍內適當地變更來使用。
圖1(a)係示意地顯示本發明封裝基板之一例的概略側面圖。 圖1(b)係圖1(a)之俯視圖。 圖2(a)係示意地顯示配置有焊球之封裝基板之一例的概略側面圖。圖2(b)係圖2(a)之俯視圖。 圖3(a)係示意地顯示包含圖1(a)所示封裝基板之PoP一例的概略側面圖。 圖3(b)係示意地顯示包含圖2(a)所示封裝基板之PoP一例的概略側面圖。
圖1(a)所示之封裝基板10係一具有基材20與配置於基材20表面21之電極30的封裝基板。 於電極30上,介著包含金屬粉及熱硬化性樹脂之導電性糊之硬化物40而直立設置有金屬銷50。
另一方面,圖2(a)所示之封裝基板110係一具有基材120與配置於基材120表面121之電極130的封裝基板。 電極130上配置有焊球160。
如圖1(a)及(b)所示,相對於金屬銷50的形狀為略圓柱狀,如圖2(a)及(b)所示,焊球160的形狀為略球狀。 再者,圖1(a)與(b)以及圖2(a)與(b)中,電極30與電極130為相同大小,金屬銷50及焊球160之大小為使用該等封裝基板製作PoP所需之大小。
如圖2(b)所示,從俯視觀看封裝基板110時,焊球160之輪廓大於配置於基材120之電極130之輪廓。由於焊球160彼此接觸後將產生短路,故封裝基板110上係以使焊球160彼此不致互相接觸來配置電極130。因此,封裝基板110上各電極130彼此之間隔變寬。
如圖1(b)所示,從俯視觀看封裝基板10時,金屬銷50之輪廓小於配置於基材20之電極30之輪廓。因此,可在無須擔心金屬銷50彼此側面會接觸的情況下,將電極30配置於封裝基板10上。因此,封裝基板10中各電極30彼此之間隔變窄。
即,就封裝基板上使立體物密集的情況而言,略柱狀之立體物較略球狀之立體物更有利。 基於該理由,金屬銷50可較焊球160在封裝基板上更密集。因此,封裝基板10可較封裝基板110小型化。
如圖3(a)所示,於封裝基板10上積層其他封裝基板11而成為PoP1。此時,配置於封裝基板11底部之電極31與金屬銷50之上部介著導電性糊之硬化物40連接。 又,如圖3(b)所示,於封裝基板110上積層其他封裝基板111而成為PoP101。此時,配置於封裝基板110底部之電極131與焊球160之上部連接。
比較圖3(a)與圖3(b),相較於封裝基板110上已積層其他封裝基板111之PoP101,封裝基板10上更已積層其他封裝基板11之PoP1在寬度上較小且薄。
PoP1之寬度較PoP101小之理由係如前述,封裝基板上金屬銷50較焊球160容易密集之故。
PoP1較PoP101薄之理由係如下述。 如圖2(a)所示,焊球160上面係曲面狀。又,如圖3(b)所示,配置於封裝基板111底部之電極131的底面係平面狀。 於連接焊球160與電極131時,係使焊球160之上面熔融後連接該等,但為使焊球160可充分地包覆電極131之底面,焊球160係使用稍大者。 另一方面,如圖1(a)所示,金屬銷50之上面係平面狀。又,如圖3(a)所示,配置於封裝基板11底部之電極31的底面係平面狀。 此外,金屬銷50之上面與電極31之底面介著熱硬化性樹脂之硬化物40連接。 換言之,以PoP1而言,不須如使用焊球160的情況去考量焊球160上面之熔融而加大設計金屬銷50。 因此,可使PoP1較PoP101薄。
依據該等理由,藉由使用金屬銷50,可將已積層封裝基板10之PoP1小型化及薄型化。
再者,如後述,金屬銷50係介著導電性糊之硬化物40以相對於基材20不傾斜而直立的狀態設置於封裝基板10上。因此,圖3(a)所示之PoP1中,亦可將焊料使用於連接配置於封裝基板11底部之電極31與金屬銷50上部。
封裝基板10中,金屬銷50之形狀只要為略柱狀的話即可,並未特別限定,亦可為例如,略三角柱狀、略四角柱狀、略六角柱狀等角柱狀、或略圓柱狀、略橢圓柱狀等。 該等中以四角柱狀或圓柱狀為佳。
金屬銷50為四角柱狀時,以其底面為長50~300mm、寬50~300mm之略長方形為佳。 金屬銷50為圓柱狀時,其底面以直徑50~200mm之略圓形為佳,以70~150mm之略圓形更佳。 金屬銷50之底面若為前述形狀及大小,即可適當地使金屬銷50密集。
封裝基板10中,金屬銷50之密度以100~500銷/1封裝為佳,以300~400銷/1封裝更佳。又,金屬銷50之節距以0.2~0.5mm為佳。所謂金屬銷50之節距係相鄰之金屬銷50彼此間之距離之意。 如此,藉使金屬銷50密集,即可縮小封裝基板10及已積層封裝基板10之PoP1。
金屬銷50之高度並未特別限定,以50~500mm為佳。 金屬銷50之高度若在前述範圍內,積層封裝基板10即可降低PoP1之高度。
封裝基板10中,金屬銷以包含選自於由銅、銀、金及鎳所構成群組中之至少1種為佳。 該等金屬之導電性優異。因此,可適當地電連接封裝基板彼此。
封裝基板10中,於電極30上介著導電性糊之硬化物40直立設置有金屬銷50。即,製造封裝基板10時,金屬銷50係使用導電性糊被固定於電極30。 以使用例如焊料將金屬銷固定於電極的情況而言,將有焊料已熔融時焊料黏度過度下降、或因焊料之表面張力變化造成金屬銷傾斜的情形。 另一方面,導電性糊因含有熱硬化性樹脂故藉由加熱而硬化。因此,於使用前述導電性糊將金屬銷固定於電極時,金屬銷較使用焊料的情況來得不易傾斜。因此,封裝基板10中金屬銷50之傾斜小。
又,封裝基板10中導電性糊之硬化物40包含已硬化之熱硬化性樹脂與金屬粉。
已硬化之熱硬化性樹脂並未特別限定,以丙烯酸酯樹脂、環氧樹脂、酚樹脂、胺基甲酸酯樹脂、矽酮樹脂等已硬化者為佳。 更具體之熱硬化性樹脂,可舉例如:雙酚A型環氧樹脂、溴化環氧樹脂、雙酚F型環氧樹脂、酚醛清漆型環氧樹脂、脂環式環氧樹脂、環氧丙基胺型環氧樹脂、1,6-己二醇二環氧丙基醚等環氧丙基醚型環氧樹脂、雜環式環氧樹脂、胺基酚型環氧樹脂等。 該等熱硬化性樹脂可單獨使用,亦可合併使用。
又,硬化前之熱硬化性樹脂的硬化溫度以較後述之低熔點金屬的熔點高10℃以上為佳。又,熱硬化溫度之上限以200℃為佳。 熱硬化性樹脂的硬化溫度小於前述溫度時,熱硬化性樹脂會於低熔點金屬軟化前就硬化,低熔點金屬與金屬銷不易形成合金。 又,熱硬化性樹脂的硬化溫度以160~180℃為佳。
又,金屬粉包含低熔點金屬與具較前述低熔點金屬熔點更高熔點的高熔點金屬。 金屬粉只要包含低熔點金屬與高熔點金屬的話即可,並未特別限定,例如,可由低熔點金屬粒子及高熔點金屬粒子之混合物所構成、由低熔點金屬與高熔點金屬成為一體後之粒子所構成、或由低熔點金屬粒子、高熔點金屬粒子及低熔點金屬與高熔點金屬成為一體後之粒子的混合物所構成。
金屬粉若包含高熔點金屬,可提升導電性糊之導電性。
金屬粉若包含低熔點金屬,於加熱導電性糊時,低熔點金屬會軟化,導電性糊之黏度將會暫時下降。之後,導電性糊之熱硬化性樹脂硬化,成為導電性糊之硬化物。 製造封裝基板10時,若使用低熔點金屬,導電性糊受到加熱黏度暫時下降之際,導電性糊將無縫隙地與金屬銷接觸。之後,因導電性糊硬化,故金屬銷50可堅固地被固定。 即,以金屬粉包含低熔點金屬之封裝基板而言,金屬銷50係堅固地固定且直立設置於電極30上。
又,導電性糊若包含低熔點金屬,導電性糊硬化時將形成金屬銷50與低熔點金屬之合金。因此,金屬銷50可堅固地固定於電極30上,且可提升導電性糊之導電性。 此外,如此之合金因耐熱性優異,故亦可提升封裝基板之耐熱性。
以下使用圖式說明如此合金存在的情形。 圖4係示意地顯示本發明封裝基板中電極、導電性糊之硬化物及金屬銷之關係之一例的放大截面圖。 如圖4所示,封裝基板10中於導電性糊之硬化物40與金屬銷50之間,存在有低熔點金屬與金屬銷50之合金70。 換言之,導電性糊之一部分與金屬銷50之至少一部分為一體化。因此,封裝基板10中金屬銷50堅固地固定且直立設置於電極30上。 再者,合金70中亦可含有來自高熔點金屬之元素。
可藉由能量色散型X射線分析(EDS)確認導電性糊之硬化物40與金屬銷50間是否存在合金70。 EDS之條件係使用裝設於掃描型電子顯微鏡(日本電子(股)製,型號:JSM-7800F)之能量色散型分光器(日本電子(股)製,型號:JED-2300),以加速電壓:3~15kV、3000倍觀察之條件。
封裝基板10中低熔點金屬之熔點以180℃以下為佳,以60~180℃較佳,以120~145℃更佳。 低熔點金屬之熔點超過180℃的話,於加熱導電性糊之際,在導電性糊之黏度暫時下降前,熱硬化性樹脂容易開始硬化、或導電性糊之黏度下降的溫度範圍容易變小。因此,封裝基板10中金屬銷50不易堅固地固定於電極30上。 再者,低熔點金屬之熔點小於60℃的話,由於導電性糊黏度下降的溫度過低,故將金屬銷50固定於電極30上時金屬銷50會變得容易傾斜。另一方面,低熔點金屬之熔點若在60℃以上,封裝基板10中金屬銷50將變得不易傾斜。
封裝基板10中低熔點金屬以包含選自於由銦、錫、鉛及鉍所構成群組中之至少1種為佳,以錫較佳。 該等金屬具有適合作為低熔點金屬之熔點及導電性。
封裝基板10中高熔點金屬之熔點以800℃以上為佳,以800~1500℃較佳,以900~1100℃更佳。
又,高熔點金屬以包含選自於由銅、銀、金、鎳、鍍銀銅及鍍銀銅合金所構成群組中之至少1種為佳。 該等金屬之導電性優異。因此,對封裝基板10而言可提升金屬銷50與電極30間之導電性。
封裝基板10中,金屬粉包含前述低熔點金屬及高熔點金屬時,導電性糊之硬化物40與金屬銷50間之合金70以錫與銅之合金為佳。
低熔點金屬與高熔點金屬之重量比並未特別限定,但以低熔點金屬:高熔點金屬=80:20~20:80為佳。 相對於高熔點金屬重量之低熔點金屬重量的比例若大於前述範圍的話,在製造本發明封裝基板上,使導電性糊硬化時,導電性糊將暫時變得過軟,金屬銷變得容易傾斜。 相對於高熔點金屬重量之低熔點金屬重量的比例若小於前述範圍的話,在製造本發明封裝基板上,使導電性糊硬化時,源於低熔點金屬少,低熔點金屬與金屬銷之合金將不易形成。結果,金屬銷之固定容易變弱。
封裝基板10中導電性糊之硬化物40中的金屬粉含量以80~95重量%為佳。 導電性糊之硬化物中的金屬粉含量若小於80重量%的話,封裝基板之電阻值容易變高。 導電性糊之硬化物中的金屬粉含量若大於95重量%的話,在製造本發明封裝基板之際,導電性糊之黏度會變高,印刷性變差。結果,導電性糊之硬化物的印刷狀態容易變差。
再者,封裝基板10中基材20之材料並未特別限定,可為環氧樹脂、BT樹脂(雙順丁烯二醯亞胺三)、聚醯亞胺、氟樹脂、聚苯醚、液晶聚合物、酚樹脂、陶瓷等。 又,封裝基板10中電極30之材料並未特別限定,亦可為銅、錫、鎳、鋁、金、銀等。
封裝基板10之大小以長10~30mm、寬10~50mm的略長方形為佳。
再者,本發明封裝基板視需要亦可配置有焊球。 換言之,本發明封裝基板中,介著包含金屬粉及熱硬化性樹脂的導電性糊之硬化物而直立設置的金屬銷與焊球可混合存在。
接著,舉以下2例說明如此之本發明封裝基板的製造方法。
(本發明封裝基板之製造方法的第1例) 本發明封裝基板之製造方法的第1例之特徵包含: (1)基材準備步驟,準備表面已配置有電極之基材; (2)印刷步驟,於前述電極上印刷導電性糊,該導電性糊包含金屬粉及熱硬化性樹脂; (3)金屬銷配置步驟,於前述導電性糊上配置金屬銷;及 (4)金屬銷直立設置步驟,藉由加熱前述導電性糊使前述導電性糊軟化然後硬化而作成前述導電性糊之硬化物,並介著前述導電性糊之硬化物,將前述金屬銷直立設置於前述電極上。
以下使用圖式說明各步驟。
圖5係示意地顯示本發明封裝基板之製造方法步驟中所含之基材準備步驟的示意圖。 圖6係示意地顯示本發明封裝基板之製造方法步驟中所含之印刷步驟的示意圖。 圖7係示意地顯示本發明封裝基板之製造方法步驟中所含之金屬銷配置步驟的示意圖。 圖8(a)及(b)係示意地顯示本發明封裝基板之製造方法步驟中所含之金屬銷直立設置步驟的示意圖。
(1)基材準備步驟 如圖5所示,首先,準備表面21已配置有電極30之基材20。 基材20及電極30之較佳材料因如前述本發明封裝基板的說明中所記載,故於此省略記載。 再者,可藉由眾所皆知的方法製作電極已配置於表面之基材。
(2)印刷步驟 (2-1)導電性糊之準備 本步驟中,首先,製作導電性糊。 導電性糊可藉由混合金屬粉與熱硬化性樹脂來製造。 製作之導電性糊中,金屬粉與熱硬化性樹脂之重量比並未特別限定,但以熱硬化性樹脂:金屬粉=20:80~5:95為佳。
又,製作之導電性糊中使用低熔點金屬及高熔點金屬作為金屬粉。 導電性糊所含之熱硬化性樹脂、低熔點金屬及高熔點金屬的較佳材料及性質因如前述本發明封裝基板的說明中所記載,故於此省略記載。
又,製作導電性糊時,除了金屬粉及熱硬化性樹脂之外,亦可混合硬化劑、助熔劑、硬化催化劑、消泡劑、調平劑、有機溶劑、無機填料等。 硬化劑可舉例如:2-苯基-4,5-二羥甲基咪唑、2-苯基咪唑、2-十一基咪唑、2-十七基咪唑、2-乙基咪唑、2-苯基咪唑、2-乙基-4-甲基咪唑、1-氰乙基-2-十一基咪唑、1-氰乙基-2-十一基咪唑啶鎓偏苯三甲酸鹽等。 助熔劑可舉例如:氯化鋅、乳酸、檸檬酸、油酸、硬脂酸、麩胺酸、苯甲酸、草酸、麩胺酸鹽酸鹽、苯胺鹽酸鹽、溴十六烷吡啶、尿素、羥乙基十二烷胺、聚乙二醇十二烷胺、油醯基丙烯二胺、三乙醇胺、甘油、肼、松香等。
(2-2)導電性糊之印刷 接著,如圖6所示,印刷包含金屬粉46及熱硬化性樹脂47之導電性糊45。 導電性糊45之印刷方法並未特別限定,但可以網版印刷等眾所皆知的方法進行。
(3)金屬銷配置步驟 接著,如圖7所示,於導電性糊45上配置金屬銷50。 金屬銷50以配置成300~400銷/1封裝之密度為佳。 如此,藉使金屬銷50密集,可縮小製造之封裝基板。甚者,亦可縮小積層有已製造之封裝基板的PoP。 金屬銷50之較佳形狀、材料因如前述本發明封裝基板的說明中所記載,於此省略記載。
(4)金屬銷直立設置步驟 接著,如圖8(a)所示,藉由加熱導電性糊45使導電性糊45先軟化後再硬化,作成導電性糊之硬化物40。藉此,如圖8(b)所示,介著導電性糊之硬化物40即可將金屬銷50直立設置於電極30上。
使用導電性糊45將金屬銷50固定於電極30的情況,相較於使用焊料的情況,金屬銷50不易傾斜。 就該原理,與使用焊料將金屬銷固定於電極之情形相較來進行說明。
圖9(a)及(b)係示意地顯示使用焊料在已配置於封裝基板表面之電極上直立設置金屬銷之方法之一例的示意圖。 如圖9(a)所示,為將金屬銷150直立設置於電極130上,於使用焊料161時,首先,於電極130上配置焊料161,再於其上配置金屬銷150。 接著,如圖9(b)所示,加熱焊料161使其熔融,之後,藉由冷卻焊料161使其固化,而將金屬銷150固定於電極130。 如此,在使用焊料161將金屬銷150固定於電極130的情況下,會如圖9(b)所示,在使焊料161熔融時焊料161之黏度將過度下降、或因焊料161之表面張力變化導致金屬銷150容易傾斜。如此,由於焊料161是在金屬銷150傾斜之狀態下冷卻固化,故金屬銷150容易在金屬銷150傾斜之狀態下被固定於電極130。
另一方面,如圖8(a)及(b)所示,使用導電性糊45將金屬銷50直立設置於電極30的情況下,導電性糊45因包含熱硬化性樹脂47故藉由加熱而硬化。因此,使用導電性糊45將金屬銷50固定於電極30時,與使用焊料相較,金屬銷50不易傾斜。
此外,金屬銷直立設置步驟中導電性糊45之加熱溫度以較低熔點金屬之熔點高10℃以上之溫度為佳。又,加熱溫度之上限以200℃較佳。 若加熱溫度未較低熔點金屬之熔點高10℃之溫度的話,熱硬化性樹脂47會在低熔點金屬軟化前就硬化,低熔點金屬與金屬銷50則不易形成合金。 若加熱溫度超過200℃的話,導電性糊45之硬化物所含之金屬粉、硬化後之熱硬化性樹脂及金屬銷變得容易劣化。
又,導電性糊45因包含低熔點金屬與高熔點金屬,於加熱導電性糊45時,低熔點金屬軟化,導電性糊45之黏度暫時下降。此時,導電性糊45將與金屬銷50無縫相接。 之後,因導電性糊45硬化,金屬銷50便被堅固地固定。 換言之,因金屬粉包含低熔點金屬,故可將金屬銷50堅固地固定於電極30。 再者,導電性糊45之黏度暫時下降時,黏度之極小值以40~200Pa×s為佳,以60~180Pa×s較佳。 又,金屬粉因包含低熔點金屬,故於導電性糊45硬化時,低熔點金屬將與金屬銷50形成合金。因此,金屬銷50被堅固地固定在電極30上的同時,亦可使導電性糊之硬化物40之導電性提升。 此外,如此之合金因耐熱性優異,亦可提升製造之封裝基板的耐熱性。
本說明書之「黏度」係使用流變計(型號:MCR302,製造公司:Anton Parr公司)依照以下條件測定之黏度之意。 升溫速度:5℃/min 測定夾具:PP25 擺動角度γ:0.1% 頻率f:1Hz 溫度:25~200℃
經由以上步驟,可製造本發明封裝基板。
(本發明封裝基板之製造方法的第2例) 本發明封裝基板之製造方法的第2例包含: (1)基材準備步驟,準備表面已配置有電極之基材; (2)導電性糊附著步驟,使包含金屬粉及熱硬化性樹脂之導電性糊附著於金屬銷之端部; (3)金屬銷配置步驟,於電極上配置金屬銷使之與導電性糊接觸;及 (4)金屬銷直立設置步驟,藉由加熱導電性糊使導電性糊軟化然後硬化而作成導電性糊之硬化物,並介著導電性糊之硬化物,將金屬銷直立設置於電極上。
換言之,本發明封裝基板之製造方法的第2例係將前述本發明封裝基板之製造方法的第1例中(2)印刷步驟及(3)金屬銷配置步驟,取代成以下(2´)導電性糊附著步驟及(3´)金屬銷配置步驟的封裝基板之製造方法。
圖10係示意地顯示本發明封裝基板之製造方法步驟中所含之導電性糊附著步驟的示意圖。 圖11係示意地顯示本發明封裝基板之製造方法步驟中所含之金屬銷配置步驟的示意圖。
(2´)導電性糊附著步驟 首先,如前述「(2-1)導電性糊之準備」所記載,製作包含金屬粉及熱硬化性樹脂之導電性糊。 接著,如圖10所示,本步驟中使包含金屬粉46及熱硬化性樹脂47之導電性糊45附著於金屬銷50之端部51。 使導電性糊45附著於金屬銷50之端部51的方法並未特別限定,亦可藉由例如浸漬法附著。 金屬銷50之較佳形狀、材料等、及導電性糊45之較佳組成因如前述,於此省略記載。
(3´)金屬銷配置步驟 如圖11所示,本步驟中使附著於金屬銷50之端部51的導電性糊45與電極30上接觸,配置金屬銷50。 因金屬銷50之較佳密度因如前述,於此省略記載。 實施例
以下顯示更具體地說明本發明之實施例,但本發明並未受該等實施例所限定。
(實施例1) (1)基材準備步驟 準備表面配置有由銅所構成之電極的基板,該基板由環氧樹脂構成。
(2)印刷步驟 (2-1)導電性糊之準備 以表1所示之比例摻合原材料,並使用行星攪拌器以500rpm攪拌30分鐘,製作導電性糊。
表1中,原材料之數值係重量份之意。 表1中,鍍銀銅粉之平均粒徑為2mm,銀之熔點為962℃、銅之熔點為1085℃。 表1中,銀粉之平均粒徑為5mm,熔點為962℃。 表1中,Sn42%-Bi58%合金之平均粒徑為10mm,熔點為139℃。 表1中,Sn80%-Bi20%合金之平均粒徑為5mm,熔點為139℃。
(2-2)導電性糊之印刷 使用具有多數個開口部的金屬掩模來印刷已製得之導電性糊,該開口部為孔徑100mm、厚度60mm。
(3)金屬銷配置步驟 接著,於導電性糊上配置直徑150mm、高度200mm之略圓柱狀的金屬銷,該金屬銷由銅構成。
(4)金屬銷直立設置步驟 接著,在180℃下加熱導電性糊1小時,藉此使導電性糊軟化然後硬化而作成導電性糊之硬化物。 藉此,介著導電性糊之硬化物將金屬銷直立設置於前述電極上。
經由以上步驟,製造實施例1之封裝基板。
(實施例2)及(實施例3)、以及(比較例1) 除了將導電性糊之原材料變更成如表1所示配方之外,與實施例1同樣地,製造實施例2及實施例3、及比較例1之封裝基板。
(印刷性之評價) 製造實施例1~3及比較例1之封裝基板時之「(2-2)導電性糊之印刷」中,藉由目視計算已印刷有導電性糊之處的數量,評價印刷性。 評價基準係如下述。再者,轉印率(%)係由以下算出:基板上已透過金屬掩模開口部而轉印有導電性糊之處的數量/金屬掩模之開口部的全部數量×100。於表2顯示評價結果。 ○:轉印率100% △:轉印率小於100%~80% ×:轉印率小於80%
(導電性糊之硬化物與金屬銷之邊界觀察) 以包含導電性糊之硬化物與金屬銷之邊界處的方式,自所製造之實施例1之封裝基板取出導電性糊之硬化物及金屬銷。 以使導電性糊之硬化物與金屬銷之邊界呈現於截面的方式來截斷導電性糊之硬化物及金屬銷,再使用掃描型電子顯微鏡(SEM)觀察,更利用EDS對截面之錫、鉍、銅、銀進行元素分析後,製圖該等的分布。於圖12(a)~(e)顯示結果。
圖12(a)係實施例1之封裝基板之導電性糊之硬化物與金屬銷之邊界的SEM照片。 圖12(b)係顯示實施例1之封裝基板之導電性糊之硬化物與金屬銷之邊界中錫分布的製圖影像。 圖12(c)係顯示實施例1之封裝基板之導電性糊之硬化物與金屬銷之邊界中鉍分布的製圖影像。 圖12(d)係顯示實施例1之封裝基板之導電性糊之硬化物與金屬銷之邊界中銅分布的製圖影像。 圖12(e)係顯示實施例1之封裝基板之導電性糊之硬化物與金屬銷之邊界中銀分布的製圖影像。
圖12(a)~(e)中,符號40所示部分為導電性糊之硬化物部分,符號50所示部分為金屬銷部分。 圖12(b)~(e)中,符號46b、46c、46d及46e所示部分分別為錫、鉍、銅及銀分布之部分。 圖12(b)及(d)中,符號70所示部分為錫與銅之合金。
如圖12(b)及(d)所示,導電性糊之硬化物與金屬銷之間存在有錫與銅之合金。即,導電性糊之硬化物之一部分與金屬銷之一部分為一體化。 因此,實施例1之封裝基板中,金屬銷堅固地固定於電極上。
(金屬銷之傾斜觀察) 藉由目視觀察所製造之實施例1~3、及比較例1之封裝基板之金屬銷的傾斜並進行評價。 評價結果係如下述。於表3顯示結果。 ◎:金屬銷之傾斜比例小於5%。 ○:金屬銷之傾斜比例為5~10%。 ×:金屬銷之傾斜比例大於10%。
由該等結果,可知實施例1~3之封裝基板中金屬銷之傾斜少,適合積層封裝基板。
1,101‧‧‧PoP 10,110‧‧‧封裝基板11,111‧‧‧其他封裝基板20,120‧‧‧基材21,121‧‧‧基材表面30,31,130,131‧‧‧電極40‧‧‧導電性糊之硬化物45‧‧‧導電性糊46‧‧‧金屬粉46b‧‧‧錫之分布部分46c‧‧‧鉍之分布部分46d‧‧‧銅之分布部分46e‧‧‧銀之分布部分47‧‧‧熱硬化性樹脂50,150‧‧‧金屬銷51‧‧‧金屬銷之端部70‧‧‧合金160‧‧‧焊球161‧‧‧焊料
圖1(a)係示意地顯示本發明封裝基板之一例的概略側面圖。 圖1(b)係圖1(a)之俯視圖。 圖2(a)係示意地顯示配置有焊球之封裝基板之一例的概略側面圖。 圖2(b)係圖2(a)之俯視圖。 圖3(a)係示意地顯示包含圖1(a)所示之封裝基板之PoP之一例的概略側面圖。 圖3(b)係示意地顯示包含圖2(a)所示之封裝基板之PoP之一例的概略側面圖。 圖4係示意地顯示本發明封裝基板之電極、導電性糊之硬化物及金屬銷之關係之一例的放大截面圖。 圖5係示意地顯示本發明封裝基板之製造方法步驟中所含之基材準備步驟的示意圖。 圖6係示意地顯示本發明封裝基板之製造方法步驟中所含之印刷步驟的示意圖。 圖7係示意地顯示本發明封裝基板之製造方法步驟中所含之金屬銷配置步驟的示意圖。 圖8(a)及(b)係示意地顯示本發明封裝基板之製造方法步驟中所含之金屬銷直立設置步驟的示意圖。 圖9(a)及(b)係示意地顯示使用焊料於配置於封裝基板表面之電極直立設置金屬銷之方法之一例的示意圖。 圖10係示意地顯示本發明封裝基板之製造方法步驟中所含之導電性糊附著步驟的示意圖。 圖11係示意地顯示本發明封裝基板之製造方法步驟中所含之金屬銷配置步驟的示意圖。 圖12(a)係實施例1之封裝基板之導電性糊之硬化物與金屬銷之邊界的SEM照片。 圖12(b)係顯示實施例1之封裝基板之導電性糊之硬化物與金屬銷之邊界中錫分布的製圖影像。 圖12(c)係顯示實施例1之封裝基板之導電性糊之硬化物與金屬銷之邊界中鉍分布的製圖影像。 圖12(d)係顯示實施例1之封裝基板之導電性糊之硬化物與金屬銷之邊界中銅分布的製圖影像。 圖12(e)係顯示實施例1之封裝基板之導電性糊之硬化物與金屬銷之邊界中銀分布的製圖影像。
10‧‧‧封裝基板
20‧‧‧基材
21‧‧‧基材表面
30‧‧‧電極
40‧‧‧導電性糊之硬化物
50‧‧‧金屬銷
Claims (9)
- 一種封裝基板,具有基材與配置於前述基材表面之電極,其特徵在於:於前述電極上介著包含金屬粉及熱硬化性樹脂的導電性糊之硬化物,直立設置有金屬銷;前述金屬粉含低熔點金屬與高熔點金屬,該高熔點金屬具有較前述低熔點金屬熔點更高之熔點;前述電極側之前述金屬銷的端部為平坦。
- 如請求項1之封裝基板,其中前述導電性糊之硬化物與前述金屬銷之間,存在有前述低熔點金屬與前述金屬銷之合金。
- 如請求項1或2之封裝基板,其中前述低熔點金屬之熔點係180℃以下。
- 如請求項1或2之封裝基板,其中前述低熔點金屬包含選自於由銦、錫、鉛及鉍所構成群組中之至少1種。
- 如請求項1或2之封裝基板,其中前述高熔點金屬之熔點係800℃以上。
- 如請求項1或2之封裝基板,其中前述高熔點金屬包含選自於由銅、銀、金、鎳、鍍銀銅及鍍銀銅合金所構成群組中之至少1種。
- 如請求項1或2之封裝基板,其中前述金屬銷包含選自於由銅、銀、金及鎳所構成群組中之至少1種。
- 一種封裝基板之製造方法,係製造如請求 項1至7中任一項之封裝基板,該方法包含:基材準備步驟,準備表面已配置有電極之基材;印刷步驟,於前述電極上印刷導電性糊,該導電性糊包含金屬粉及熱硬化性樹脂;金屬銷配置步驟,於前述導電性糊上配置金屬銷;及金屬銷直立設置步驟,藉由加熱前述導電性糊使前述導電性糊軟化然後硬化而作成前述導電性糊之硬化物,並介著前述導電性糊之硬化物將前述金屬銷直立設置於前述電極上;前述金屬粉包含低熔點金屬與高熔點金屬,該高熔點金屬具有較前述低熔點金屬熔點更高之熔點;前述金屬銷之至少一端部為平坦,且在前述金屬銷之配置步驟是將前述金屬銷配置成使前述金屬銷之平坦端部接觸前述導電性糊。
- 一種封裝基板之製造方法,係製造如請求項1至7中任一項之封裝基板,該方法包含:基材準備步驟,準備表面已配置有電極之基材;導電性糊附著步驟,使包含金屬粉及熱硬化性樹脂之導電性糊附著於金屬銷之端部;金屬銷配置步驟,將前述金屬銷配置於前述電極上並使之與前述導電性糊接觸;及金屬銷直立設置步驟,藉由加熱前述導電性糊使前述導電性糊軟化然後硬化,而作成前述導電性糊之硬化物,並介著前述導電性糊之硬化物將前述金屬銷直立設置於前 述電極上,前述金屬粉包含低熔點金屬與高熔點金屬,該高熔點金屬具有較前述低熔點金屬熔點更高之熔點;前述金屬銷之至少一端部為平坦,且在前述導電性糊附著步驟是使前述導電性糊附著於前述金屬銷之平坦端部。
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