CN109661723B - 具有双面散热结构的半导体封装 - Google Patents

具有双面散热结构的半导体封装 Download PDF

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CN109661723B
CN109661723B CN201880003374.5A CN201880003374A CN109661723B CN 109661723 B CN109661723 B CN 109661723B CN 201880003374 A CN201880003374 A CN 201880003374A CN 109661723 B CN109661723 B CN 109661723B
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substrate
bonded
semiconductor chip
metal
package body
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CN109661723A (zh
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崔伦华
崔淳性
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Jmj Korea Co ltd
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Jmj Korea Co ltd
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Abstract

本发明提供一种具有双面散热结构的半导体封装，设置金属部，以使将从半导体芯片产生的高温快速地向分别露出至封装上部面、下部面的基板进行热传导。金属部通过超声波焊接及通过粘合剂与基板接合。

Description

具有双面散热结构的半导体封装
技术领域
本发明涉及具有双面散热结构的半导体封装，更具体地涉及一种具有双面散热结构的半导体封装，使得在半导体芯片中产生的高温快速地向分别在封装上、下部面露出的基板进行热传导，而散热效果优秀。
背景技术
一般而言，半导体封装为在基板贴装半导体芯片，在用卡箍或焊线而连接半导体芯片与引线框架的结构的单一模块通过环氧树脂模塑料(EMC：Epoxy molding compound)等热固性材料制模而形成封装主体。
该半导体封装将在贴装于主体内部的半导体芯片中产生的热与另外的散热片(heat slug)结合而排出热，但实情是，对于高集成半导体封装，因发热量大，而无法期望通过散热片而顺畅地排出热。
尤其，在与电动汽车的电池连接的变频器或逆变器内部设置半导体封装，此时，半导体封装的散热功能与电池的效率密切关联。
下面观察提高散热效果的现有技术。
注册专利第10-0648509号(带子式引线框架条带与利用其的引线裸露式半导体芯片封装及制造方法)中公开包括如下结构的技术，包括：半导体芯片，具有结合片；图案引线，通过电线与所述结合片连接；封装主体，封装所述半导体芯片与电线及图案引线，并将所述半导体芯片的下部与所述图案引线的下部露出至外部而形成。
所述现有技术为从半导体芯片产生的热仅向下部排出的结构，由此，散热效果低下，因露出的图案引线为通过电线连接，而构成为不易于释放热的结构。即，所述电线通过焊接附着，并仅传输电信号，并非通过电线而向图案传输热的结构，因而，难以期待高的热释放。
②注册专利第10-1461197号(散热结构的COF型半导体芯片封装)中公开由如下结构构成的技术，其包括：第一散热树脂层，涂覆于半导体芯片与薄膜之间；及第二散热树脂层，涂覆于薄膜上，以与所述半导体芯片的侧面相接的方式涂覆，且以所述半导体芯片的上面露出至外部的方式涂覆。
所述现有技术为半导体芯片被放置于薄膜上，而通过凸点与电极图案相连的结构，是一种在半导体芯片产生的热仅向露出的上部排出，难以向附着有薄膜的下部方向释放热，未存在保护半导体芯片与各个结构的封装主体，因而，难以通过引线框架或电线而进行连接，容易通过震动或冲击而发生损伤的结构。
③注册专利第10-0475313号(利用粘合带的双重芯片半导体封装组装方法)中公开通过如下步骤进行的技术，其步骤包括：第一步骤，在使用于半导体封装组装工艺的框架材料的芯片焊盘(paddle)形成用于粘合芯片的粘合层；第二步骤，在所述粘合层附着第一半导体芯片；及第三步骤，在所述第一半导体芯片上附着供在底面附着用于粘合芯片的粘合带的第二半导体芯片。
所述现有技术为通过液状胶黏剂及粘合带附着第一半导体芯片与第二半导体芯片的技术，因该技术也构成为层叠结构，由此，存在半导体封装的散热效果低下，且在结构上无法有效配置半导体芯片的问题。
发明内容
发明的内容
发明要解决的技术问题
本发明是为了解决所述问题而研发，其目的为提供一种具有双面散热结构的半导体封装，在封装主体的上部、下部分别将基板的一面露出至外部，通过上部的基板而相互连接在被放置于下部的基板上贴装的半导体芯片的上面与底面，由此，从半导体芯片产生的热向下部的基板排出，并且，也向上部的基板排出，从而，提高散热效果。
用于解决的技术方案
本发明的具有双面散热结构的半导体封装包括：封装主体，通过制模形成；第一基板部，配置于所述封装主体的内侧下部，下部面露出至封装主体的外部；半导体芯片，在所述第一基板部的上面贴装；第二基板部，配置于所述封装主体的内侧上部，上面露出至封装主体的外部；引线框架，附着于所述第一基板部及第二基板部中至少一个，并延伸至封装主体的外部；第一金属部，一侧与所述半导体芯片的上面接合；另一侧与第二基板部的底面接合；第二金属部，一侧与所述第一基板部的上面接合，另一侧与第二基板部的底面接合。
并且，本发明的特征在于，与第二基板部接合的第一金属部与第二金属部的上部通过超声波焊接接合，半导体芯片与接合于第一基板部的第一金属部和第二金属部的下部通过粘合剂接合。
而且，本发明的特征在于，第一金属部的下部通过粘合剂与半导体芯片接合的部分还形成有“V”字或“U”字状的凹槽，并坚固接合而提高散热效果，所述凹槽并非为利用数控刀具或模具而形成凹痕或通过冲压过程而借助另外的工艺形成，伴随所述第一金属部与第二金属部的超声波焊接工艺而形成。
并且，本发明的特征在于，封装主体的制模部的最上面及最下面线具有比第一基板部及第二基板部的露出面的线高或低的阶梯差。
发明的效果
本发明具有如下效果，是一种第一基板部与第二基板部的一面分别在封装主体的上部、下部露出，而容易排出热的结构，通过金属部将贴装于第一基板部的半导体芯片与第二基板部连接，而从半导体芯片产生的热并非仅向第一基板部排出，也随着金属部向上部的第二基板部排出，因而，具有优秀的散热效果。
附图说明
图1为显示具有本发明的双面散热结构的半导体封装的第一实施例的截面图；
图2为显示本发明的具有双面散热结构的半导体封装的第二实施例的截面图；
图3为显示本发明的具有双面散热结构的半导体封装的第三实施例的截面图；
图4为显示本发明的具有双面散热结构的半导体封装的第四实施例的截面图；
图5为概念性显示通过超声波焊接而进行的附着与粘合而产生的附着的附着层的不同点的截面图；
图6为显示根据本发明的实施例，对于在将金属部通过超声波而焊接至基板的情况，在金属部的对侧形成浮雕的接合层的附图；
图7为放大图6的接合层的附图；
图8为显示根据本发明的实施例，具有封装主体的制模部的最上面及最下面的线比第一基板部及第二基板部的露出面的线高(图8a)或低的(图8b)阶梯差的截面图。
具体实施方式
下面，参照附图对本发明的优选的实施例作如下具体说明。
并且，在说明本发明时，对于判断相关的公知功能或结构的具体说明为不必要地且混淆本发明的要旨的情况，省略其具体说明。
本发明的具有双面散热结构的半导体封装包括：封装主体100，通过制模形成；第一基板部200，配置于所述封装主体100的内侧下部，下部面露出至封装主体100的外部；半导体芯片300，在所述第一基板部200的上面贴装；第二基板部500，配置在所述封装主体100的内侧上部，上面露出至封装主体100的外部；引线框架400，附着在所述第一基板部200及第二基板部500中至少一个，并延伸至封装主体100的外部；第一金属部600，一侧与所述半导体芯片300的上面接合，另一侧与第二基板部500的底面接合；第二金属部700，一侧与所述第一基板部200的上面接合，另一侧与第二基板部500的底面接合。
本发明中的基板部200、500为金属材质的单一层芯片及包括将单一层设于之间，而在上部及下部附加绝缘层的三层结构的芯片。
本发明中的引线框架400，附着在第一基板部200及第二基板部500中至少一个，下面，以引线框架400附着于第一基板部200为例进行说明，但并非限定于此，如上所述，能够附着在在第一基板部200及第二基板部500中至少一个。
本发明具有如下结构，为在上部、下部第一基板部200与第二基板部500的一面分别露出至封装主体100外侧的结构，通过露出的面容易排出热，半导体芯片300贴装在第一基板部200的上面，在半导体芯片300产生的热排出至位于下部的第一基板部200，第一金属部600连接半导体芯片300的上面与第二基板部500的底面，在半导体芯片300产生的热直接传输至第二基板部500，由此，将热排出至位于上部的第二基板部500。并且，第二金属部700连接第一基板部200的上面与第二基板部500的底面，而将第一基板部200的热输送至第二基板部500而具有双面排出热的结构。
本发明的第一基板部200与第二基板部500使用由陶瓷(Al2O3)或氮化铝基体(AIN：Aluminum Nitride Substrate)材质等构成，分别在内侧形成金属图案210、510。所述金属图案210、510由金属材质印刷，该金属图案210、510包括贴装数据线、电源供应线与半导体芯片300的垫片。并且，露出至封装主体的第一基板部200与第二基板部500的外侧形成热传导性高的金属层220、520，且一面露出至外部。而且，所述第一基板部200与第二基板部500的结构由此也构成为三层，但根据半导体封装的种类，也适用由一个金属层构成的基板形式。
图1为显示本发明的第一实施例的附图，第一金属部600与第二金属部700分别由垂直的柱状的金属杆形成。由此，对于形成柱状的金属杆的情况，在结构上为稳定的形状，金属杆未在封装主体100内占据大量空间，并能够有效进行热传导。
本发明的第一金属部600与第二金属部700根据接合部位而通过不同的方法接合。即，与第二基板部500接合的第一金属部600与第二金属部700的上部通过超声波焊接接合，与半导体芯片300和第一基板部200接合的第一金属部600与第二金属部700的下部通过粘合剂接合。
所述超声波焊接(ULTRASONIC WELDING)方式为通过另外的超声波焊接接合装置(未图示)而进行接合，在要接合的材料面施加静荷重，并通过超声波震动而发生震动摩擦热而进行压接的方式。由此，根据通过超声波焊接方式接合，具有提高接合品质，防止发生环境污染，并通过自动控制而提高生产力的效果。并且，粘合剂为通过一般使用的导电性焊锡或胶黏剂焊锡的接合方式。
由此，对于第一金属部600与第二金属部700通过超声波焊接而接合于处于上部的第二基板部500，通过焊锡等粘合剂与处于下部的半导体芯片300与第一基板部200接合的情况，具有在作业工艺中提高生产力，并提高半导体封装的完成度的效果。
而且，第一金属部600的下部，即通过粘合剂与半导体芯片300接合的部分还形成“V”字或“U”字形的凹槽，使得更坚固接合，并且，因凹槽而增加表面，更易于提高散热效果。
所述凹槽并非为利用数控刀具或模具而形成凹痕或通过冲压过程而借助另外的工艺形成，优选地，通过第一金属部600与第二金属部700的超声波焊接工艺中的振动而自然形成。此时的作业条件为超声波频率15～45khz，焊接作业0.05～2秒，对于用于超声波焊接的压力，通过气压按压的情况为0.05～0.7Mpa，通过电机驱动按压的情况为1Kgf～150Kgf的范围。
在本发明的实施例中，以第一金属部600为代表，参照图5至图7对超声波焊接工艺的优点作如下具体说明。
图5显示所示，通过超声波焊接与粘合剂而形成的接合在“一体化”或“附着”的方面相同，将第一金属部600通过粘合剂附着于下部基板即第一基板部200的情况的接合层20，与通过超声波焊接而熔接至上部基板即第二基板部500的情况的接合层(50)对比，而变厚最小数倍，对于超声波焊接的情况，显示形成有细微界线的程度的厚度。
在散热面进行观察时，散热的必要性大的部分，尤其在贴装有大量发散热的半导体芯片的下部基板存在厚的粘合层，合理的为将通过粘合剂附着金属部，以帮助散热。但对于金属部附着于与主热源存在距离的金属即上部基板的部分，散热效果也很重要，但在通过严密且稳定的金属之间的组织结合的辅助材料的一体化与通过自动化的超声波焊接工艺的生产效率方面超声波焊接更有利。
而且，发明人如图6显示所示，确认了在将第一金属部600通过超声波焊接至第二基板部500的情况下，通过高频率振动，而在其对面，即，第一金属部600与第一基板部200相对的层形成有圆形或V、U字形的浮雕20a。图6显示，为了方便，去除了第一基板部200。因此，在将金属部的下部通过半导体芯片与粘合剂接合时，向浮雕部分，即“V”字或“U”字形的凹槽填充粘合剂，由此，稳固结合金属部与半导体芯片，通过增加接合层20的厚度与表面积而得到优秀的散热效果。
由图7所示，能够确认到对于在第一金属部600与半导体芯片之间填充粘合剂的情况，粘合剂被熔融于浮雕20a而流入，从而，得到坚固的结合与散热效果的改善。
再次，图2为显示本发明的第二实施例的附图，第一金属部600由弯曲的金属回形针形成，第二金属部700由柱状的金属杆构成，第一金属部与第二金属部形成为相互不同的形状。由此，对于第一金属部600由弯曲的形状的金属回形针构成的情况，与第一实施例相比，具有接触面积高，而快速进行热传导，且散热效果更优秀的特征。
本发明的半导体芯片300被贴装于第一基板部200的金属图案(210)上部。此时，半导体芯片300通过焊锡等粘合剂接合，如图1至2所示，也能够由一个半导体芯片300构成，如图3显示的第三实施例所示，多个半导体芯片300位于第一基板部200，第一金属部600也与半导体芯片300的数量对应，各个半导体芯片300也构成为分别接合第一金属部600的形状。
图4为显示本发明的第四实施例的附图。包括：封装主体100，通过制模形成；第一基板部200，配置于所述封装主体100的内侧下部，下部面露出至封装主体100的外部；下部半导体芯片310，在所述第一基板部200的上面贴装；第二基板部500，配置于所述封装主体100的内侧上部，上面露出至封装主体100的外部；引线框架400，附着于所述第一基板部200及第二基板部500中至少一个，并延伸至封装主体100的外部；所述上部半导体芯片320，在所述第二基板部500的底面贴装；第一金属部600，一侧分别与所述下部半导体芯片310的上面和上部半导体芯片320的底面接合，另一侧分别与处于背面的第一基板部、第二基板部200、500接合；第二金属部700，一侧与所述第一基板部200的上面接合，另一侧与第二基板部500的底面接合。
本发明的第四实施例为下部半导体芯片310与上部半导体芯片320分别贴装于第一基板部200与第二基板部500的形状。作为所述第四实施例的接合结构，第一金属部600通过粘合剂分别与下部半导体芯片310和上部半导体芯片320接合，通过超声波焊接与处于相对面的第一基板部、第二基板部200、500接合，第二金属部700通过粘合剂与第一基板部200接合，通过超声波焊接与第二基板部500接合。该接合结构与第一、二、三实施例存在略微差异，但与半导体芯片接合的第一金属部600通过焊锡等粘合剂接合的技术思想为相同的。
如上所述，本发明的第四实施例的引线框架400也附着于所述第一基板部200及第二基板部500中至少一个，并以引线框架400附着于所述第一基板部200为例进行了记述，但并非限定于此，能够附着于第一基板部200及第二基板部500中至少一个。
再者，本发明的第五实施例如图8显示所示，封装主体100的制模部的线被设计为具有比第一基板部200及第二基板部500的露出面，即比各个金属层220、520高(图8a)或低的(图8b)阶梯差d。优选地，阶梯差d的大小为5～100um。
由此，在赋予阶梯差d的情况下，对于将半导体封装安装于在后续工艺中未显示的被安装辅助材料的情况，对于在位于被安装辅助材料的散热片(heat sink)涂覆热传导效率高的油膏(Greece)或热胶带(thermal tape)的情况，能够均匀地保持该涂覆层的厚度，并由半导体封装快速且有效地释放热。
综上，本发明参照所述实施例而进行了说明，但能够在本发明的技术思想范围内进行各种变形实施。
工业实用性
本发明的具有双面散热结构的半导体封装适用于电子设备，并能够大量生产，由此，具有工业实用性。

Claims (5)

1.一种具有双面散热结构的半导体封装，所述半导体封装包括：
封装主体，通过制模形成；
第一基板，配置于所述封装主体的内侧下部，且下部面露出至所述封装主体的外部；
半导体芯片，在所述第一基板的上面贴装；
引线框架，附着于所述第一基板并延伸至所述封装主体的外部；
第二基板，配置于所述封装主体的内侧上部，上面露出至所述封装主体的外部；
第一金属单元，一侧与所述半导体芯片的上面接合，另一侧与所述第二基板的底面接合；以及
第二金属单元，一侧与所述第一基板的上面接合，另一侧与所述第二基板的底面结合，
其中，第一金属单元与第二金属单元的上部通过超声波焊接与所述第二基板接合，与所述半导体芯片和所述第一基板接合的所述第一金属单元和所述第二金属单元的下部通过粘合剂接合，在所述第一金属单元的下部通过粘合剂与所述半导体芯片接合的部分中还形成有“V”字或“U”字形状的凹槽，以便更坚固地接合并提高散热效果；
所述凹槽通过第一金属部与第二金属部的超声波焊接工艺中的振动而自然形成，超声波焊接工艺的作业条件为：超声波频率15～45khz，焊接作业0.05～2秒，对于用于超声波焊接的压力，通过气压按压的情况为0.05～0.7Mpa，通过电机驱动按压的情况为1Kgf～150Kgf的范围。
2.根据权利要求1所述的半导体封装，其中，所述第一金属单元与所述第二金属单元由柱状的金属杆形成。
3.根据权利要求1所述的半导体封装，其中，所述第一金属单元由弯曲的金属回形针形成，并且所述第二金属单元由柱状的金属杆形成。
4.根据权利要求1所述的半导体封装，其中，所述半导体芯片在所述第一基板上具有多个，并且各个半导体芯片分别接合有所述第一金属单元。
5.一种具有双面散热结构的半导体封装，所述半导体封装包括：
封装主体，通过制模形成；
第一基板，配置于所述封装主体的内侧下部，下部面露出至所述封装主体的外部；
下部半导体芯片，在所述第一基板的上面贴装；
引线框架，附着于所述第一基板并向所述封装主体的外部延伸；
第二基板，配置于所述封装主体的内侧上部，且上面露出至所述封装主体的外部；
上部半导体芯片，在所述第二基板的底面贴装；
第一金属单元，一侧分别与所述下部半导体芯片的上面和所述上部半导体芯片的底面接合，另一侧分别与位于相对面的所述第一基板、所述第二基板接合；以及
第二金属单元，一侧与所述第一基板的上面接合，另一侧与所述第二基板的底面接合，
其中，所述第一金属单元通过粘合剂分别与所述下部半导体芯片和所述上部半导体芯片接合，并通过超声波焊接与处于相对面的所述第一基板、所述第二基板接合，所述第二金属单元通过粘合剂与所述第一基板接合，并通过超声波焊接与所述第二基板接合，以及在所述第一金属单元的下部通过粘合剂与所述下部半导体芯片接合的部分和所述第一金属单元的上部通过粘合剂与上部半导体芯片接合的部分中还形成有“V”字或“U”字形状的凹槽，以便更坚固接合并提高散热效果；
所述凹槽通过第一金属部与第二金属部的超声波焊接工艺中的振动而自然形成，超声波焊接工艺的作业条件为：超声波频率15～45khz，焊接作业0.05～2秒，对于用于超声波焊接的压力，通过气压按压的情况为0.05～0.7Mpa，通过电机驱动按压的情况为1Kgf～150Kgf的范围。
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