CN109509790B - 半导体装置 - Google Patents

半导体装置 Download PDF

Info

Publication number
CN109509790B
CN109509790B CN201810177805.1A CN201810177805A CN109509790B CN 109509790 B CN109509790 B CN 109509790B CN 201810177805 A CN201810177805 A CN 201810177805A CN 109509790 B CN109509790 B CN 109509790B
Authority
CN
China
Prior art keywords
region
semiconductor
type
conductivity type
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201810177805.1A
Other languages
English (en)
Chinese (zh)
Other versions
CN109509790A (zh
Inventor
玉城朋宏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
Original Assignee
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Electronic Devices and Storage Corp filed Critical Toshiba Corp
Publication of CN109509790A publication Critical patent/CN109509790A/zh
Application granted granted Critical
Publication of CN109509790B publication Critical patent/CN109509790B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
CN201810177805.1A 2017-09-15 2018-03-05 半导体装置 Active CN109509790B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-178414 2017-09-15
JP2017178414A JP2019054170A (ja) 2017-09-15 2017-09-15 半導体装置

Publications (2)

Publication Number Publication Date
CN109509790A CN109509790A (zh) 2019-03-22
CN109509790B true CN109509790B (zh) 2022-06-07

Family

ID=61580953

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810177805.1A Active CN109509790B (zh) 2017-09-15 2018-03-05 半导体装置

Country Status (4)

Country Link
US (1) US10347713B2 (https=)
EP (1) EP3457442B1 (https=)
JP (1) JP2019054170A (https=)
CN (1) CN109509790B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102463180B1 (ko) * 2018-05-04 2022-11-03 현대자동차 주식회사 반도체 소자 및 그 제조 방법
JP7524527B2 (ja) * 2019-04-12 2024-07-30 富士電機株式会社 超接合半導体装置および超接合半導体装置の製造方法
JP7850044B2 (ja) * 2022-09-22 2026-04-22 株式会社東芝 半導体装置の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008227238A (ja) * 2007-03-14 2008-09-25 Toyota Central R&D Labs Inc 半導体装置
JP2012151143A (ja) * 2011-01-14 2012-08-09 Toyota Motor Corp 半導体装置
CN104103683A (zh) * 2013-04-08 2014-10-15 三菱电机株式会社 半导体装置及其制造方法

Family Cites Families (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5618946B2 (https=) 1972-10-27 1981-05-02
JPS55770B2 (https=) 1973-12-05 1980-01-10
JPS5515922A (en) 1978-07-15 1980-02-04 Nippon Chem Ind Co Ltd:The Stabilizing method for aqueous solution of permanganate
IT1109587B (it) 1978-07-27 1985-12-23 Fiat Spa Motore a combustione interna a ciclo diesel
JPS5580361A (en) 1978-12-12 1980-06-17 Matsushita Electric Ind Co Ltd Production of vertical junction gate type field effect transistor
JPS5586650A (en) 1978-12-26 1980-06-30 Toyota Central Res & Dev Lab Inc Production of cast valve
JPS571447A (en) 1980-06-05 1982-01-06 Toshiomi Kido Device for treating unpolished rice
JPS5716865A (en) 1980-07-04 1982-01-28 Tanabe Seiyaku Co Ltd Novel tetrahydroisoquinoline-3-carboxylic ester
JPS5784242A (en) 1980-11-17 1982-05-26 Honda Motor Co Ltd Automatic winker cancelling apparatus
JPS5895038A (ja) 1981-11-30 1983-06-06 Takenaka Komuten Co Ltd サイロの円周払い出し装置
JPS5953397B2 (ja) 1982-07-29 1984-12-25 「つあい」 「いえん」銘 合成皮革の製法とその合成皮革
JPS5971414A (ja) 1982-10-15 1984-04-23 Toray Ind Inc 強ネン用原糸
JPH07193018A (ja) 1993-12-27 1995-07-28 Takaoka Electric Mfg Co Ltd 高耐圧半導体素子の製造方法
US5969400A (en) * 1995-03-15 1999-10-19 Kabushiki Kaisha Toshiba High withstand voltage semiconductor device
US6215168B1 (en) * 1999-07-21 2001-04-10 Intersil Corporation Doubly graded junction termination extension for edge passivation of semiconductor devices
US7820511B2 (en) * 2004-07-08 2010-10-26 Semisouth Laboratories, Inc. Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making
US8901699B2 (en) * 2005-05-11 2014-12-02 Cree, Inc. Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection
EP1908119B1 (de) 2005-07-27 2012-04-18 Infineon Technologies Austria AG Halbleiterbauelement mit einer driftzone und einer driftsteuerzone
JP5580361B2 (ja) 2005-07-27 2014-08-27 インフィネオン テクノロジーズ オーストリア アクチエンゲゼルシャフト ドリフト領域とドリフト制御領域とを有する半導体素子
JP4189415B2 (ja) * 2006-06-30 2008-12-03 株式会社東芝 半導体装置
JP2008147362A (ja) * 2006-12-08 2008-06-26 Toyota Central R&D Labs Inc 半導体装置
JP4620075B2 (ja) * 2007-04-03 2011-01-26 株式会社東芝 電力用半導体素子
JP4333782B2 (ja) * 2007-07-05 2009-09-16 株式会社デンソー ジャンクションバリアショットキーダイオードを備えた炭化珪素半導体装置
JP5092610B2 (ja) * 2007-08-01 2012-12-05 トヨタ自動車株式会社 半導体装置
JP2009094203A (ja) * 2007-10-05 2009-04-30 Denso Corp 炭化珪素半導体装置
JP5276355B2 (ja) * 2008-05-13 2013-08-28 新電元工業株式会社 半導体装置
JP5326405B2 (ja) * 2008-07-30 2013-10-30 株式会社デンソー ワイドバンドギャップ半導体装置
US8097919B2 (en) * 2008-08-11 2012-01-17 Cree, Inc. Mesa termination structures for power semiconductor devices including mesa step buffers
JP2010225833A (ja) 2009-03-24 2010-10-07 Toshiba Corp 半導体装置
JP5453867B2 (ja) * 2009-03-24 2014-03-26 株式会社デンソー ショットキーバリアダイオードを備えた炭化珪素半導体装置およびその製造方法
JP4966348B2 (ja) 2009-08-25 2012-07-04 株式会社東芝 半導体装置の製造方法
JP2011071160A (ja) 2009-09-24 2011-04-07 Toshiba Corp 半導体装置
JP5515922B2 (ja) 2010-03-24 2014-06-11 富士電機株式会社 半導体装置
JP5517688B2 (ja) 2010-03-24 2014-06-11 三菱電機株式会社 半導体装置
DE112011103469B4 (de) * 2010-10-15 2023-01-19 Mitsubishi Electric Corporation Halbleitervorrichtung
KR101604234B1 (ko) 2012-03-05 2016-03-17 미쓰비시덴키 가부시키가이샤 반도체장치
KR101654223B1 (ko) 2012-04-13 2016-09-05 미쓰비시덴키 가부시키가이샤 다이오드
JP2014038937A (ja) 2012-08-16 2014-02-27 Mitsubishi Electric Corp 半導体装置
JP5811977B2 (ja) * 2012-09-18 2015-11-11 株式会社デンソー 炭化珪素半導体装置
CN104704635A (zh) 2012-10-02 2015-06-10 三菱电机株式会社 半导体装置及其制造方法
WO2014057700A1 (ja) 2012-10-11 2014-04-17 三菱電機株式会社 半導体装置およびその製造方法
JP6090988B2 (ja) * 2013-03-05 2017-03-08 株式会社 日立パワーデバイス 半導体装置
JP2014175377A (ja) 2013-03-07 2014-09-22 Mitsubishi Electric Corp 炭化珪素半導体装置およびその製造方法
JP2014179528A (ja) 2013-03-15 2014-09-25 Mitsubishi Electric Corp 半導体素子の製造方法
JP6020317B2 (ja) * 2013-04-05 2016-11-02 三菱電機株式会社 半導体素子
JP6129117B2 (ja) 2013-05-29 2017-05-17 三菱電機株式会社 半導体装置及びその製造方法
JP2014241367A (ja) 2013-06-12 2014-12-25 三菱電機株式会社 半導体素子、半導体素子の製造方法
CN107768427A (zh) 2013-06-12 2018-03-06 三菱电机株式会社 半导体装置
JP6101183B2 (ja) 2013-06-20 2017-03-22 株式会社東芝 半導体装置
CN104282732B (zh) 2013-07-01 2017-06-27 株式会社东芝 半导体装置
JP6236456B2 (ja) 2013-09-09 2017-11-22 株式会社日立製作所 半導体装置およびその製造方法
JP6091395B2 (ja) 2013-10-07 2017-03-08 三菱電機株式会社 半導体装置およびその製造方法
JP6168961B2 (ja) 2013-10-10 2017-07-26 三菱電機株式会社 半導体装置
JP5921784B2 (ja) 2014-01-10 2016-05-24 三菱電機株式会社 半導体装置
JP6206339B2 (ja) * 2014-06-23 2017-10-04 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP6379778B2 (ja) 2014-07-15 2018-08-29 富士電機株式会社 半導体装置および半導体装置の製造方法
JP2016035989A (ja) 2014-08-04 2016-03-17 株式会社東芝 半導体装置
JP6265274B2 (ja) 2014-09-17 2018-01-24 富士電機株式会社 半導体装置
EP3012870A1 (en) * 2014-10-20 2016-04-27 ABB Technology AG Edge termination for high voltage semiconductor devices
JP5895038B2 (ja) 2014-11-06 2016-03-30 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
CN106463547B (zh) 2014-12-25 2019-10-18 富士电机株式会社 半导体装置
JP6363540B2 (ja) * 2015-03-16 2018-07-25 株式会社東芝 半導体装置
US9673315B2 (en) * 2015-03-24 2017-06-06 Kabushiki Kaisha Toshiba Semiconductor device, inverter circuit, driving device, vehicle, and elevator
JP6592950B2 (ja) * 2015-04-24 2019-10-23 富士電機株式会社 炭化ケイ素半導体装置の製造方法
EP3180799B1 (en) * 2015-06-09 2018-12-26 ABB Schweiz AG Silicon carbide power semiconductor device comprising an edge termination and method for manufacturing said edge termination
JP6523886B2 (ja) * 2015-09-11 2019-06-05 株式会社東芝 半導体装置
JP2017055010A (ja) * 2015-09-11 2017-03-16 株式会社東芝 半導体装置
JP2017063079A (ja) * 2015-09-24 2017-03-30 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP6672764B2 (ja) * 2015-12-16 2020-03-25 富士電機株式会社 半導体装置および半導体装置の製造方法
JP6524002B2 (ja) * 2016-03-16 2019-06-05 株式会社東芝 半導体装置
JP6659516B2 (ja) * 2016-10-20 2020-03-04 トヨタ自動車株式会社 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008227238A (ja) * 2007-03-14 2008-09-25 Toyota Central R&D Labs Inc 半導体装置
JP2012151143A (ja) * 2011-01-14 2012-08-09 Toyota Motor Corp 半導体装置
CN104103683A (zh) * 2013-04-08 2014-10-15 三菱电机株式会社 半导体装置及其制造方法

Also Published As

Publication number Publication date
JP2019054170A (ja) 2019-04-04
US10347713B2 (en) 2019-07-09
EP3457442B1 (en) 2020-10-07
CN109509790A (zh) 2019-03-22
EP3457442A1 (en) 2019-03-20
US20190088737A1 (en) 2019-03-21

Similar Documents

Publication Publication Date Title
US11081554B2 (en) Insulated gate semiconductor device having trench termination structure and method
JP5721902B2 (ja) 半導体装置およびその製造方法
JP5921784B2 (ja) 半導体装置
US9082843B2 (en) Semiconductor device with step-shaped edge termination, and method for manufacturing a semiconductor device
JP5517688B2 (ja) 半導体装置
CN103022156A (zh) 带有集成肖特基势垒二极管的沟槽mosfet器件
US9048215B2 (en) Semiconductor device having a high breakdown voltage
US9812528B2 (en) Semiconductor device
JP2017168663A (ja) 半導体装置
CN114975626B (zh) 半导体装置
JP2017168669A (ja) 半導体装置
JP6363540B2 (ja) 半導体装置
JP2017168665A (ja) 半導体装置
JPWO2012124191A1 (ja) 半導体装置
CN109509790B (zh) 半导体装置
CN104662667B (zh) 半导体装置
US11508841B2 (en) Semiconductor device
US20160276441A1 (en) Semiconductor device
JP7249921B2 (ja) 半導体装置
CN119302050A (zh) 半导体装置
US9608058B1 (en) Semiconductor device
JP2017157673A (ja) 半導体装置
JP2016174026A (ja) 半導体装置
US20260032973A1 (en) Gate trench power semiconductor devices having shallow trench shields and deep support shields
US20260090075A1 (en) Semiconductor device

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant