CN109313394B - 使用光敏化学品或光敏化学放大抗蚀剂的临界尺寸控制 - Google Patents

使用光敏化学品或光敏化学放大抗蚀剂的临界尺寸控制 Download PDF

Info

Publication number
CN109313394B
CN109313394B CN201780036852.8A CN201780036852A CN109313394B CN 109313394 B CN109313394 B CN 109313394B CN 201780036852 A CN201780036852 A CN 201780036852A CN 109313394 B CN109313394 B CN 109313394B
Authority
CN
China
Prior art keywords
radiation
sensitive material
wavelength
critical dimension
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201780036852.8A
Other languages
English (en)
Chinese (zh)
Other versions
CN109313394A (zh
Inventor
迈克尔·A·卡尔卡西
安东·J·德维利耶
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN109313394A publication Critical patent/CN109313394A/zh
Application granted granted Critical
Publication of CN109313394B publication Critical patent/CN109313394B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2024—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure of the already developed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F18/00—Pattern recognition
    • G06F18/20—Analysing
    • G06F18/22—Matching criteria, e.g. proximity measures

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Data Mining & Analysis (AREA)
  • Theoretical Computer Science (AREA)
  • Bioinformatics & Computational Biology (AREA)
  • General Engineering & Computer Science (AREA)
  • Evolutionary Computation (AREA)
  • Evolutionary Biology (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Bioinformatics & Cheminformatics (AREA)
  • Artificial Intelligence (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN201780036852.8A 2016-05-13 2017-05-12 使用光敏化学品或光敏化学放大抗蚀剂的临界尺寸控制 Active CN109313394B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662335977P 2016-05-13 2016-05-13
US62/335,977 2016-05-13
PCT/US2017/032435 WO2017197279A1 (en) 2016-05-13 2017-05-12 Critical dimension control by use of photo-sensitized chemicals or photo-sensitized chemically amplified resist

Publications (2)

Publication Number Publication Date
CN109313394A CN109313394A (zh) 2019-02-05
CN109313394B true CN109313394B (zh) 2021-07-02

Family

ID=58745488

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201780036852.8A Active CN109313394B (zh) 2016-05-13 2017-05-12 使用光敏化学品或光敏化学放大抗蚀剂的临界尺寸控制

Country Status (6)

Country Link
US (1) US10551743B2 (enExample)
JP (1) JP6909374B2 (enExample)
KR (1) KR102475021B1 (enExample)
CN (1) CN109313394B (enExample)
TW (1) TWI657314B (enExample)
WO (1) WO2017197279A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI575566B (zh) * 2014-02-24 2017-03-21 東京威力科創股份有限公司 與光敏化化學放大光阻化學品及程序一起使用的方法及技術
JP6895600B2 (ja) 2014-02-25 2021-06-30 東京エレクトロン株式会社 現像可能な底部反射防止コーティングおよび着色インプラントレジストのための化学増幅方法および技術
US10048594B2 (en) 2016-02-19 2018-08-14 Tokyo Electron Limited Photo-sensitized chemically amplified resist (PS-CAR) model calibration
US10429745B2 (en) 2016-02-19 2019-10-01 Osaka University Photo-sensitized chemically amplified resist (PS-CAR) simulation
WO2017197288A1 (en) 2016-05-13 2017-11-16 Tokyo Electron Limited Critical dimension control by use of a photo agent
TWI657314B (zh) 2016-05-13 2019-04-21 東京威力科創股份有限公司 藉由使用光敏化學品或光敏化學增幅型光阻劑之臨界尺寸控制
DE102016221261A1 (de) * 2016-10-28 2018-05-03 Carl Zeiss Smt Gmbh Verfahren zur mikrolithographischen Herstellung mikrostrukturierter Bauelemente
JP7348456B2 (ja) * 2018-03-19 2023-09-21 東京エレクトロン株式会社 較正されたトリム量を用いて限界寸法を補正するための方法
JP7122020B2 (ja) * 2018-06-14 2022-08-19 国立大学法人大阪大学 レジストパターン形成方法
WO2021034567A1 (en) 2019-08-16 2021-02-25 Tokyo Electron Limited Method and process for stochastic driven defectivity healing
JP7196121B2 (ja) * 2020-02-10 2022-12-26 富士フイルム株式会社 パターン形成方法、感光性樹脂組成物、積層体の製造方法、及び、電子デバイスの製造方法
US11747733B2 (en) * 2021-01-08 2023-09-05 Tokyo Electron Limited Freeze-less methods for self-aligned double patterning
US20250244680A1 (en) * 2024-01-30 2025-07-31 Tokyo Electron Limited Method for selective exposure of wafer to corrective irradiation at a per-die level

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103034048A (zh) * 2011-09-29 2013-04-10 中芯国际集成电路制造(北京)有限公司 光刻方法
TWI459440B (zh) * 2009-04-27 2014-11-01 Tokyo Electron Ltd 微影應用中之雙型顯影用之全面性曝光製程
TW201539539A (zh) * 2014-02-24 2015-10-16 Tokyo Electron Ltd 與光敏化化學放大光阻化學品及程序一起使用的方法及技術
TW201541194A (zh) * 2014-02-25 2015-11-01 Tokyo Electron Ltd 用於可顯像的底部抗反射塗層與經染色的植入光阻之化學放大方法及技術
TW201544909A (zh) * 2014-02-24 2015-12-01 Tokyo Electron Ltd 光敏化化學放大光阻中用以測量光敏劑濃度之計量學
TW201544910A (zh) * 2014-02-24 2015-12-01 Tokyo Electron Ltd 在光敏化化學放大光阻中減輕極紫外光散射雜訊複製於酸散射雜訊中

Family Cites Families (93)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4402571A (en) 1981-02-17 1983-09-06 Polaroid Corporation Method for producing a surface relief pattern
US4609615A (en) 1983-03-31 1986-09-02 Oki Electric Industry Co., Ltd. Process for forming pattern with negative resist using quinone diazide compound
EP0203215B1 (de) 1985-05-29 1990-02-21 Ibm Deutschland Gmbh Verfahren zur Reparatur von Transmissionsmasken
US4931380A (en) 1985-07-18 1990-06-05 Microsi, Inc. Pre-exposure method for increased sensitivity in high contrast resist development of positive working diazo ketone photoresist
JPH0654390B2 (ja) 1986-07-18 1994-07-20 東京応化工業株式会社 高耐熱性ポジ型ホトレジスト組成物
JPH0740543B2 (ja) 1987-02-17 1995-05-01 松下電子工業株式会社 半導体装置の製造方法
JPH04239116A (ja) 1991-01-14 1992-08-27 Fujitsu Ltd 半導体装置の製造方法
JP2723405B2 (ja) 1991-11-12 1998-03-09 松下電器産業株式会社 微細電極の形成方法
US5294680A (en) 1992-07-24 1994-03-15 International Business Machines Corporation Polymeric dyes for antireflective coatings
JP3158710B2 (ja) 1992-09-16 2001-04-23 日本ゼオン株式会社 化学増幅レジストパターンの形成方法
US5534970A (en) 1993-06-11 1996-07-09 Nikon Corporation Scanning exposure apparatus
JP3654597B2 (ja) 1993-07-15 2005-06-02 株式会社ルネサステクノロジ 製造システムおよび製造方法
JP3288884B2 (ja) * 1995-03-13 2002-06-04 株式会社東芝 レジストパターン形成方法
JPH0990621A (ja) 1995-09-21 1997-04-04 Canon Inc レジスト組成物、同組成物を用いるパターン形成方法、および半導体デバイスの製造方法
JP2910654B2 (ja) 1996-01-30 1999-06-23 日本電気株式会社 レジストパターン形成方法
JP2867964B2 (ja) 1996-06-27 1999-03-10 日本電気株式会社 レジスト膜パターンの形成方法
US5905019A (en) 1997-09-26 1999-05-18 International Business Machines Corporation Thin resist process by sub-threshold exposure
JPH11237737A (ja) 1997-12-19 1999-08-31 Kansai Shingijutsu Kenkyusho:Kk 感光性樹脂組成物およびその製造方法
US6180320B1 (en) 1998-03-09 2001-01-30 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a semiconductor device having a fine pattern, and semiconductor device manufactured thereby
US6245492B1 (en) 1998-08-13 2001-06-12 International Business Machines Corporation Photoresist system and process for aerial image enhancement
JP2000208408A (ja) 1999-01-19 2000-07-28 Nec Corp 化学増幅系レジストのパタ―ン形成方法
JP4557328B2 (ja) 1999-02-01 2010-10-06 富士フイルム株式会社 ポジ型フォトレジスト組成物
US6824879B2 (en) 1999-06-10 2004-11-30 Honeywell International Inc. Spin-on-glass anti-reflective coatings for photolithography
US6582891B1 (en) 1999-12-02 2003-06-24 Axcelis Technologies, Inc. Process for reducing edge roughness in patterned photoresist
JP2002006512A (ja) 2000-06-20 2002-01-09 Mitsubishi Electric Corp 微細パターン形成方法、微細パターン形成用材料、およびこの微細パターン形成方法を用いた半導体装置の製造方法
WO2001098838A2 (en) 2000-06-22 2001-12-27 Koninklijke Philips Electronics N.V. Method of forming optical images, mask for use in this method, method of manufacturing a device using this method, and apparatus for carrying out this method
US6548219B2 (en) 2001-01-26 2003-04-15 International Business Machines Corporation Substituted norbornene fluoroacrylate copolymers and use thereof in lithographic photoresist compositions
US6555479B1 (en) 2001-06-11 2003-04-29 Advanced Micro Devices, Inc. Method for forming openings for conductive interconnects
WO2003001297A2 (en) 2001-06-26 2003-01-03 Kla-Tencor Corporation Method for determining lithographic focus and exposure
US7136796B2 (en) 2002-02-28 2006-11-14 Timbre Technologies, Inc. Generation and use of integrated circuit profile-based simulation information
JP3711083B2 (ja) * 2002-04-12 2005-10-26 株式会社東芝 パターン形成方法
JP4410977B2 (ja) 2002-07-09 2010-02-10 富士通株式会社 化学増幅レジスト材料及びそれを用いたパターニング方法
US6900001B2 (en) 2003-01-31 2005-05-31 Applied Materials, Inc. Method for modifying resist images by electron beam exposure
US6968253B2 (en) 2003-05-07 2005-11-22 Kla-Tencor Technologies Corp. Computer-implemented method and carrier medium configured to generate a set of process parameters for a lithography process
SG115693A1 (en) 2003-05-21 2005-10-28 Asml Netherlands Bv Method for coating a substrate for euv lithography and substrate with photoresist layer
US7186486B2 (en) 2003-08-04 2007-03-06 Micronic Laser Systems Ab Method to pattern a substrate
JP4974049B2 (ja) 2004-02-20 2012-07-11 株式会社ニコン 露光方法、露光装置、並びにデバイス製造方法
US20050214674A1 (en) 2004-03-25 2005-09-29 Yu Sui Positive-working photoimageable bottom antireflective coating
JP4481723B2 (ja) 2004-05-25 2010-06-16 株式会社東芝 評価方法、マスクパターン補正方法、半導体装置の製造方法、及びプログラム
JP4524154B2 (ja) 2004-08-18 2010-08-11 富士フイルム株式会社 化学増幅型レジスト組成物及びそれを用いたパターン形成方法
US20060269879A1 (en) 2005-05-24 2006-11-30 Infineon Technologies Ag Method and apparatus for a post exposure bake of a resist
JP2007033882A (ja) * 2005-07-27 2007-02-08 Hitachi Via Mechanics Ltd 露光装置及び露光方法並びに配線基板の製造方法
US7488933B2 (en) 2005-08-05 2009-02-10 Brion Technologies, Inc. Method for lithography model calibration
KR100703007B1 (ko) 2005-11-17 2007-04-06 삼성전자주식회사 감광성 유기 반사 방지막 형성용 조성물 및 이를 이용한패턴 형성 방법
US20070275330A1 (en) 2006-05-25 2007-11-29 International Business Machines Corporation Bottom anti-reflective coating
US7687205B2 (en) 2006-06-15 2010-03-30 The Boeing Company Photolithographic method and apparatus employing a polychromatic mask
JP2007334036A (ja) 2006-06-15 2007-12-27 Sekisui Chem Co Ltd 感光性樹脂組成物、これを用いた薄膜パターンの製造方法、電子機器用保護膜、トランジスタ、カラーフィルタ、有機ｅｌ素子、ゲート絶縁膜及び薄膜トランジスタ
DE102006053074B4 (de) 2006-11-10 2012-03-29 Qimonda Ag Strukturierungsverfahren unter Verwendung chemisch verstärkter Fotolacke und Belichtungsvorrichtung
JP4678383B2 (ja) 2007-03-29 2011-04-27 信越化学工業株式会社 化学増幅ネガ型レジスト組成物及びパターン形成方法
US20090096106A1 (en) 2007-10-12 2009-04-16 Air Products And Chemicals, Inc. Antireflective coatings
US8088548B2 (en) 2007-10-23 2012-01-03 Az Electronic Materials Usa Corp. Bottom antireflective coating compositions
JP4961324B2 (ja) 2007-10-26 2012-06-27 富士フイルム株式会社 電子線、ｘ線又はｅｕｖ用ポジ型レジスト組成物及びそれを用いたパターン形成方法
KR101585992B1 (ko) 2007-12-20 2016-01-19 삼성전자주식회사 반사방지 코팅용 고분자, 반사방지 코팅용 조성물 및 이를 이용한 반도체 장치의 패턴 형성 방법
US20090214985A1 (en) 2008-02-27 2009-08-27 Tokyo Electron Limited Method for reducing surface defects on patterned resist features
US20090274974A1 (en) 2008-04-30 2009-11-05 David Abdallah Spin-on graded k silicon antireflective coating
US7966582B2 (en) 2008-05-23 2011-06-21 Synopsys, Inc. Method and apparatus for modeling long-range EUVL flare
KR20110025211A (ko) 2008-06-12 2011-03-09 바스프 에스이 술포늄 유도체 및 잠재성 산으로서의 그의 용도
NL2003654A (en) 2008-11-06 2010-05-10 Brion Tech Inc Methods and system for lithography calibration.
US8455176B2 (en) 2008-11-12 2013-06-04 Az Electronic Materials Usa Corp. Coating composition
US8383318B2 (en) 2009-02-19 2013-02-26 Brewer Science Inc. Acid-sensitive, developer-soluble bottom anti-reflective coatings
DE102009015717B4 (de) 2009-03-31 2012-12-13 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Verfahren und System zum Erkennen einer Teilchenkontamination in einer Immersionslithographieanlage
JP5011345B2 (ja) 2009-05-15 2012-08-29 東京エレクトロン株式会社 レジストパターンのスリミング処理方法
CN102483582B (zh) 2009-08-24 2016-01-20 Asml荷兰有限公司 量测方法和设备、光刻设备、光刻处理单元和包括量测目标的衬底
US8428762B2 (en) 2009-08-28 2013-04-23 Kla-Tencor Corporation Spin coating modeling
US8589827B2 (en) 2009-11-12 2013-11-19 Kla-Tencor Corporation Photoresist simulation
US8623458B2 (en) 2009-12-18 2014-01-07 International Business Machines Corporation Methods of directed self-assembly, and layered structures formed therefrom
US8795952B2 (en) 2010-02-21 2014-08-05 Tokyo Electron Limited Line pattern collapse mitigation through gap-fill material application
US8124319B2 (en) 2010-04-12 2012-02-28 Nanya Technology Corp. Semiconductor lithography process
US8940475B2 (en) * 2010-11-23 2015-01-27 Tokyo Electron Limited Double patterning with inline critical dimension slimming
US8443308B2 (en) 2011-05-02 2013-05-14 Synopsys Inc. EUV lithography flare calculation and compensation
KR101909567B1 (ko) 2011-07-08 2018-10-18 에이에스엠엘 네델란즈 비.브이. 리소그래피 패터닝 공정 및 상기 공정에 사용하기 위한 레지스트
JP5846046B2 (ja) 2011-12-06 2016-01-20 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
JP5705103B2 (ja) 2011-12-26 2015-04-22 株式会社東芝 パターン形成方法
US8647817B2 (en) 2012-01-03 2014-02-11 Tokyo Electron Limited Vapor treatment process for pattern smoothing and inline critical dimension slimming
JP5789275B2 (ja) 2012-02-03 2015-10-07 エーエスエムエル ネザーランズ ビー．ブイ． ３ｄレジストプロファイルのシミュレーション用のリソグラフィモデル
CN103309164A (zh) 2012-03-09 2013-09-18 中芯国际集成电路制造(上海)有限公司 半导体结构的形成方法
US9851639B2 (en) 2012-03-31 2017-12-26 International Business Machines Corporation Photoacid generating polymers containing a urethane linkage for lithography
JP5741518B2 (ja) 2012-04-24 2015-07-01 信越化学工業株式会社 レジスト下層膜材料及びパターン形成方法
JP6004172B2 (ja) 2012-07-31 2016-10-05 日産化学工業株式会社 カルボニル基含有カルバゾールノボラックを含むリソグラフィー用レジスト下層膜形成組成物
JP2014143415A (ja) 2012-12-31 2014-08-07 Rohm & Haas Electronic Materials Llc イオン注入法
EP2960926B1 (en) 2013-02-20 2019-05-29 Osaka University Method of forming resist pattern
JP6337757B2 (ja) * 2014-01-20 2018-06-06 東京エレクトロン株式会社 露光装置、レジストパターン形成方法及び記憶媒体
JP6321189B2 (ja) * 2014-01-27 2018-05-09 東京エレクトロン株式会社 パターン化膜の臨界寸法をシフトするシステムおよび方法
TWI600966B (zh) 2014-02-21 2017-10-01 東京威力科創股份有限公司 光敏化學增幅型光阻材料及使用該光阻材料之圖案形成方法、半導體器件、光微影用光罩，以及奈米壓印用模板
WO2016025210A1 (en) 2014-08-13 2016-02-18 Tokyo Electron Limited Critical dimension control in photo-sensitized chemically-amplified resist
JP6175455B2 (ja) * 2015-01-22 2017-08-02 東京エレクトロン株式会社 レジストパターン形成方法
JP6774814B2 (ja) 2015-08-20 2020-10-28 国立大学法人大阪大学 化学増幅型レジスト材料及びパターン形成方法
JP6512994B2 (ja) 2015-08-20 2019-05-15 国立大学法人大阪大学 化学増幅型レジスト材料
JP6809843B2 (ja) 2015-08-20 2021-01-06 国立大学法人大阪大学 パターン形成方法
US10048594B2 (en) 2016-02-19 2018-08-14 Tokyo Electron Limited Photo-sensitized chemically amplified resist (PS-CAR) model calibration
US10429745B2 (en) 2016-02-19 2019-10-01 Osaka University Photo-sensitized chemically amplified resist (PS-CAR) simulation
TWI657314B (zh) 2016-05-13 2019-04-21 東京威力科創股份有限公司 藉由使用光敏化學品或光敏化學增幅型光阻劑之臨界尺寸控制
WO2017197288A1 (en) 2016-05-13 2017-11-16 Tokyo Electron Limited Critical dimension control by use of a photo agent

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI459440B (zh) * 2009-04-27 2014-11-01 Tokyo Electron Ltd 微影應用中之雙型顯影用之全面性曝光製程
CN103034048A (zh) * 2011-09-29 2013-04-10 中芯国际集成电路制造(北京)有限公司 光刻方法
TW201539539A (zh) * 2014-02-24 2015-10-16 Tokyo Electron Ltd 與光敏化化學放大光阻化學品及程序一起使用的方法及技術
TW201544909A (zh) * 2014-02-24 2015-12-01 Tokyo Electron Ltd 光敏化化學放大光阻中用以測量光敏劑濃度之計量學
TW201544910A (zh) * 2014-02-24 2015-12-01 Tokyo Electron Ltd 在光敏化化學放大光阻中減輕極紫外光散射雜訊複製於酸散射雜訊中
TW201541194A (zh) * 2014-02-25 2015-11-01 Tokyo Electron Ltd 用於可顯像的底部抗反射塗層與經染色的植入光阻之化學放大方法及技術

Also Published As

Publication number Publication date
US20170329229A1 (en) 2017-11-16
KR102475021B1 (ko) 2022-12-06
TWI657314B (zh) 2019-04-21
JP6909374B2 (ja) 2021-07-28
WO2017197279A1 (en) 2017-11-16
JP2019517026A (ja) 2019-06-20
KR20190007019A (ko) 2019-01-21
US10551743B2 (en) 2020-02-04
TW201809881A (zh) 2018-03-16
CN109313394A (zh) 2019-02-05

Similar Documents

Publication Publication Date Title
CN109313394B (zh) 使用光敏化学品或光敏化学放大抗蚀剂的临界尺寸控制
TWI662360B (zh) 藉由使用光劑之臨界尺寸控制
US9645495B2 (en) Critical dimension control in photo-sensitized chemically-amplified resist
US9977339B2 (en) System and method for shifting critical dimensions of patterned films
JP7074990B2 (ja) 現像可能な底部反射防止コーティングおよび着色注入レジストのための化学増幅方法および技術
EP1652007B1 (en) Further method to pattern a substrate
JP6636196B2 (ja) 光増感化学増幅レジストで酸ショットノイズとして複製されるｅｕｖショットノイズの軽減
KR102767600B1 (ko) 교정된 조정 선량을 사용하여 임계 치수를 보정하기 위한 방법

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant