CN107848246A - 用于电气电路的基底和用于制造这种基底的方法 - Google Patents
用于电气电路的基底和用于制造这种基底的方法 Download PDFInfo
- Publication number
- CN107848246A CN107848246A CN201680041497.9A CN201680041497A CN107848246A CN 107848246 A CN107848246 A CN 107848246A CN 201680041497 A CN201680041497 A CN 201680041497A CN 107848246 A CN107848246 A CN 107848246A
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- China
- Prior art keywords
- composite bed
- copper
- insulating barrier
- layers
- aluminium lamination
- Prior art date
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- Pending
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Abstract
本发明涉及一种用于电气电路的基底(1),所述基底包括至少一个借助轧制包覆制造的第一复合层(2),所述第一复合层在轧制包覆之后具有至少一个铜层(3)和连接于所述铜层的铝层(4),其中至少铝层(4)的背离铜层(3)的表面侧被阳极氧化,以产生由氧化铝构成的、阳极氧化层或绝缘层(5),并且其中由氧化铝构成的阳极氧化层或绝缘层(5)经由至少一个粘接剂层(6,6’)与金属层(7)或至少一个第二复合层(2’)或至少一个陶瓷纸层(11)连接。
Description
技术领域
本发明涉及一种用于电气电路的基底以及一种用于制造这种基底的方法。
背景技术
呈电路板形式、用于电气电路的基底是充分已知的。
对此,这种基底以多层方式构成并且具有至少一个绝缘层和至少一个与该绝缘层连接的金属层或金属化部。金属层或金属化部面状地与绝缘层直接连接或可能经由另外的金属层或绝缘层连接并且结构化成多个金属化部面部段,以构成印制导线、触点、接触面和/或连接面。
尤其在电力电子学领域中,更确切地说在所谓的“低电压”应用中使用这种基底例如来构成小于2.5kV电压范围中的功率半导体模块时,需要:基底或绝缘层具有高的绝缘强度,也就是说,高的耐压强度和击穿强度。
因此,在电力电子学领域中经常使用金属-陶瓷-基底,其绝缘层通过至少一个具有高绝缘强度的陶瓷层形成。陶瓷层例如由氧化物陶瓷、氮化物陶瓷或碳化物陶瓷,如氧化铝(Al2O3)或氮化铝(AlN)或氮化硅(Si3N4)或碳化硅(SiC)或由氧化铝与氧化锆(Al2O3+ZrO2)制造。
为了将陶瓷层与至少一个形成金属化部的金属层面状地连接,根据所使用的陶瓷材料和/或金属层的待键合的金属,使用不同的、已知的制造方法,更确切地说,例如“直接键合铜方法”、“直接键合铝方法”和“活化金属键合方法”。这种制造方法的缺点是:工艺方面是耗费的并成本高的。在使用传统的陶瓷层时,造型也受到限制。
此外,用于制造高度填充的纸的方法是已知的,其中在纸制造过程中纸结构的直至85重量%聚集功能性的填充材料,例如聚集能烧结的陶瓷粉末、高吸附力的粉末或具有良好的导热性的粉末。可能地,在通过热转化进行另一变形工艺之后,包括执行两级的热转化,由聚集有能烧结的陶瓷粉末、例如氧化铝粉末预陶瓷化的纸制造所谓的烧结纸或陶瓷纸。在热转化的第一级期间,预陶瓷化的纸的有机组分,例如纤维素、淀粉和乳胶以氧化方式除去,由此产生所谓的“褐变物(Braunling)”。紧接着,在热转化的第二级中,“褐变物”被烧结并且产生具有典型的陶瓷抗弯强度的陶瓷材料。该烧结纸或陶瓷纸的微观结构还显示出对于陶瓷典型的材料特性,例如还有高的绝缘强度。在这种陶瓷纸中,陶瓷材料的优点能够与造纸技术的优点、例如简单的变形和小的重量彼此结合。
发明内容
从上述现有技术出发,本发明基于以下目的:提出一种用于电气电路的基底以及一种用于制造这种基底的所属的方法,与已知的制造方法相比,所述方法是简单的并且成本低的。所述目的通过根据权利要求1的基底和根据权利要求15的方法实现。
根据本发明的、用于电气电路的基底的主要方面能够在于:设有至少一个借助轧制包覆制造的第一复合层,所述第一复合层在轧制包覆之后具有至少一个铜层和连接于所述铜层的铝层。至少铝层的背离铜层的表面侧被阳极氧化,以产生由氧化铝构成的阳极氧化层或绝缘层,并且由氧化铝构成的阳极氧化层或绝缘层经由至少一个粘接剂层与金属层或至少一个第二复合层或陶瓷纸层连接。轧制包覆的复合层能快速地、简单地并且成本低地制造,并且有利地制造为卷材或板材,并且在后续工艺中加工。基底的所需要的绝缘强度通过由于相应地氧化铝层由产生氧化铝构成的绝缘层来实现,所述绝缘层的层厚度能够根据所需要的绝缘特性来选择。在此,金属层能够承担冷却功能并且具有相应的材料厚度和/或表面积增加。在使用优选类似于第一复合层构成的第二复合层时,还能够进一步提高绝缘强度、尤其耐压强度和击穿强度。替选地,通过使用陶瓷纸层同样能够改进绝缘强度。
第二复合层同样有利地同样具有阳极氧化层或绝缘层,并且第一复合层和第二复合层的阳极氧化层或绝缘层经由至少一个粘接剂层彼此连接,也就是说,在两个复合层之间经由至少一个粘接剂层存在直接连接。
替选地,第一复合层和第二复合层经由至少一个另外的中间层分别借助粘接剂层彼此连接。在一个实施方案变型形式中,中间层通过铝层形成,所述铝层在其彼此相对置的表面侧上阳极氧化,以产生两个相对置的、由氧化铝构成的阳极氧化层或绝缘层。
替选地,中间层能够通过第三复合层形成,所述第三复合层包括铝层、铜层和另一铝层,其中铝层的背离铜层的表面侧分别被阳极氧化,以产生两个相对置的、由氧化铝构成的阳极氧化层或绝缘层。
第一复合层的由氧化铝构成的阳极氧化层或绝缘层优选经由粘接剂层与相应的中间层的由氧化铝构成的阳极氧化层或绝缘层中的一个连接,并且第二复合层的由氧化铝构成的阳极氧化层或绝缘层经由另一粘接剂层与相应的中间层的由氧化铝构成的另一阳极氧化层或绝缘层连接。通过中间层的所描述的结构能够实现改进的散热和导热以及改进的绝缘强度。
在一个实施方案变型形式中,相应的铝层仅仅在其层厚的一部分之上被阳极氧化,或由至少部分变换的铝层制造的绝缘层的层厚度在5μm和50μm之间。
替选地,基底的至少一个铝层能够被完全阳极氧化,从而铝层完全变换成由氧化铝构成的阳极氧化层或绝缘层。尤其在铝层的层厚度极小的情况下,完全变换成阳极氧化层是有利的,因为通过铝层能够避免用于将结构化部引入到铜层中的蚀刻池的污染。
有利地,铜层具有在35μm和2mm之间的层厚度,铝层具有在10μm和300μm之间的层厚度,并且金属层具有在300μm和50mm之间的层厚度。
在本发明的一个实施方式变型形式中,至少一个铝层具有在执行阳极氧化方法之前引入的轮廓化部,所述轮廓化部例如包括多个金字塔形或棱柱形的凹部。由此,后续产生的阳极氧化层或绝缘层的表面积扩大,从而改进粘接连接的附着力以及基底的导热能力。在两个复合层经由粘接剂层直接连接的情况下,相应的铝层的轮廓化部彼此相匹配,更确切地说,使得所述轮廓化部彼此咬合。
有利地使用由环氧树脂粘接剂、丙烯酸粘接剂或聚氨酯粘接剂制造的粘接剂层。在一个有利的实施方案变型形式中,用于制造粘接剂层的粘接剂具有低的黏度,以便能够进入到绝缘层表面中的可能存在的裂纹中并且填充所述裂纹。因此,在基底中、尤其在连接区域中避免夹杂物,所述夹杂物会导致绝缘强度变差。
至少一个铜层有利地被结构化成多个金属化部部段,以构成印制导线、接触面和/或连接面。复合层的铜层优选被结构化并且构成基底的布图侧。在相应厚度的基底中,尤其在使用两个复合层并且可能使用另一中间层时,也能够执行基底的两个金属化部的结构化。
本发明的主题同样是一种用于制造用于电气电路的基底的方法,其中由铜薄膜和至少一个铝薄膜借助轧制包覆制造至少一个第一复合层,所述第一复合层具有至少一个铜层和连接于所述铜层的铝层,其中至少将铝层的背离铜层的表面侧阳极氧化,并且由此产生由氧化铝构成的阳极氧化层或绝缘层,其中所产生的由氧化铝构成的阳极氧化层或绝缘层经由至少一个粘接剂层与金属层或至少一个第二复合层粘接。
就本发明而言,术语“近似”、“基本上”或“大约”表示分别与精确值相差+/-10%的偏差,优选相差+/-5%的偏差和/或呈对于函数而言微不足道的变化形式的偏差。
本发明的改进形式、优点和应用可行性也从实施例的如下描述和附图中得出。在此,原则上,全部所描述的和/或图形示出的特征本身或以任意的组合方式是本发明的主题,而与其在权利要求或其引用中的概述无关。权利要求的内容也是说明书的组成部分。
附图说明
在下文中,借助实施例的附图详细阐述本发明。附图示出:
图1示出贯穿根据本发明的基底的简化的示意剖视图,所述基底包括第一复合层和金属层,
图2示出贯穿根据本发明的基底的替选的实施方式的简化的剖视图,所述基底包括第一复合层和第二复合层,
图3示出贯穿根据本发明的基底的另一替选实施方式的简化的剖视图,所述基底包括第一复合层和第二复合层与中间层,
图4示出贯穿根据本发明的基底的又一替选实施方式的简化的剖视图,所述基底包括第一复合层至第三复合层,
图5示出贯穿根据本发明的基底的另一替选实施方式的简化的剖视图,所述基底包括分别具有轮廓化的绝缘层的第一复合层和第二复合层,
图6示出贯穿根据本发明的、具有陶瓷纸层的基底的简化的示意剖视图,
图7示出贯穿根据图6的基底的简化的示意剖视图,所述基底具有不同构成的复合层和与陶瓷纸层的焊料连接,
图8示出贯穿用于将轧制包覆的复合层的铝层或铝合金层阳极氧化的阳极氧化池的示意剖视图。
具体实施方式
图1示出贯穿根据本发明构成的、用于电气电路的基底1的剖面的简化的示意图,所述基底具有板形的且多层的结构,也就是说,以电路板的形式构成。
在第一实施方案变型形式中,根据本发明的基底1由至少一个第一复合层2构成,所述第一复合层通过至少一个铝薄膜与铜薄膜轧制包覆来制造。因此,第一复合层2具有铜层3和连接于所述铜层的铝层4。
铝层4被阳极氧化以产生由氧化铝构成的绝缘层5,更确切地说,由氧化铝构成的绝缘层5或阳极氧化层从铝层4的背离铜层3的表面侧在铝层4的至少一部分之上延伸,也就是说,第一复合层2的铝层4的一部分经受已知的阳极氧化方法,更确切地说,经受阳极的氧化,并且由此变换成由氧化铝构成的绝缘层5或阳极氧化层。由氧化铝构成的绝缘层5具有高的耐压强度和击穿强度以及在8W/mK和30W/mK之间的导热性。
根据本发明构成的基底1的绝缘层5经由粘接剂层6例如与金属层7连接或粘接。粘接剂层6优选完全在绝缘层5的表面之上延伸。为了冷却目的,金属层7例如能够通过另一铝层或铝板形成。在一个优选的实施方案变型形式中,金属层7构成冷却体并且能够在与粘接剂层6相对置的表面侧上具有用于扩大表面积的轮廓化部,所述轮廓化部能够尤其关于所存在的凹部的形状、布置和深度方面构成有不同的外形。
适合用于粘接氧化铝的不同粘接剂、例如环氧树脂粘接剂、丙烯酸粘接剂或聚氨酯粘接剂能够用作用于产生粘接剂6的粘胶。优选地,使用低的黏度的粘胶或粘接剂,以便填充所产生的由氧化铝构成的阳极氧化层或绝缘层5的多孔的表面,从而进一步提高基底1的绝缘强度。
在第一复合层1内部,铜层3具有在35μm和2mm之间的层厚度d1,铝层4具有在10μm和300μm之间的层厚度d2,其中由至少部分变换的铝层4制造的绝缘层5的层厚度d3在5μm和50μm之间。在本发明的一个实施方案变型形式中,铝层4也能够被完全被阳极氧化,也就是说,完全阳极氧化的铝层4形成绝缘层5。粘接剂层6优选具有在1μm和2μm之间的层厚度d4。金属层7的层厚度d5在300μm和50mm之间。
基底1用作用于电气或电子电路的或电路模块、尤其电子电力电路的电路板。为此,至少第一复合层1的铜层3借助已知的掩模和蚀刻技术结构化成多个金属化部部段,所述金属化部部段例如构成印制导线、接触面和/或连接面。优选地,在制造基底1之后进行第一复合层1的铜层3的结构化。由于非常薄的阳极氧化层或绝缘层5,优选基底1的金属化部中的仅一个,更确切地说第一复合层2的铜层3被结构化,以便确保基底1的足够的稳定性。然而,在相应的、增强稳定性的中间层中,结构化基底1的、例如金属层7的两个金属化部也是可行的。第一复合层2的铜层3的结构化优选进行直至在由氧化铝构成的绝缘层5或阳极氧化层。
图2示出根据图1的基底1的一个替选的实施方案变型形式,其中代替金属层7,第二复合层2’经由粘接剂层6与第一复合层2连接。在示出的实施方式中,第一复合层和第二复合层2、2’具有类似的、优选相同的结构,也就是说,第二复合层2’同样包括铜层3’,连接于所述铜层的铝层4’,所述铝层在其与铜层3’相对置的表面侧上借助阳极氧化至少部分地变换成由氧化铝构成的绝缘层5’或阳极氧化层。在复合件中彼此相对置的绝缘层5、5’经由粘接剂层6例如直接彼此连接。通过设置两个绝缘层5、5’进一步提高基底1的绝缘强度。
在制造时,首先,优选由相同的、被轧制包覆的复合材料层制造第一复合层和第二复合层2、2’,并且然后,粘接剂层6施加到绝缘层5、5’中的至少一个上、优选施加到两个绝缘层5、5’上,紧接着,将如此准备的复合层2、2’聚集在一起并且彼此粘接或层压。随此之后,粘接剂层6的粘接剂或粘胶例如通过相应地加载压力和/或温度来硬化。
随此之后,铜层3、3’中的至少一个借助已知的掩模技术和蚀刻技术被结构化,以构成多个金属化部部段。在已经结构化的基底1的最终清洁之后,还能够执行棱边蒙护,然而,这不是强制性必需的。
多重基底形式的根据本发明的基底1的制造也是可行的,所述多重基底在完成生产之后分割成最期望的“单个”基底1。在根据本发明的基底1中,分割例如借助机械加工工序、例如锯割、切割或冲制或利用激光单元进行。因此,与现有技术不同,未结构化的金属层7优选也延伸直至相应的基底1的切割边的边缘。
图3示出根据本发明的基底1的另一替选的实施方案变型形式,其中为了进一步提高耐压强度和击穿强度,在根据按照图2的实施方案变型形式的第一复合层和第二复合层2、2’之间还设置有附加的铝层4”,分别阳极氧化所述附加的铝层的上侧和下侧,以产生由氧化铝构成的绝缘层5”。替选地,也能够设置仅一个由氧化铝构成的绝缘层5”,也就是说,附加的铝层4”被完全阳极氧化。一个或多个绝缘层5”分别经由粘接剂层6、6’与第一复合层和第二复合层2、2’的绝缘层5、5’连接。
在根据图4的另一替选的实施方案变型形式中,在根据图2的基底1的第一复合层和第二复合层2、2’之间设有第三复合层2”’,所述第三复合层由中间的铜层3”构成,所述中间的同层的上侧和下侧设有铝层4”、4”’,其中相应的铝层4”、4”’类似于上述实施例分别具有绝缘层5”。第一复合层至第三复合层2、2’、2”的绝缘层5、5’、5”的连接又分别经由粘接剂层6、6’进行。有利地,铜层3”同样能够以电方式利用并且例如结构化成多个金属化部部段。需理解:也能够设有多个中间的铜层3”。
在根据图5的替选的实施方案变型形式中,为了改进基底1的热传递特性,在执行阳极氧化方法之前,将例如呈金字塔形或棱柱形的凹部形式的轮廓化部引入相应的铝层4、4’中。将轮廓化部引入相应的铝层4、4’中例如能够通过借助轧制来压印或通过划印来进行。由此能再次降低基底1的热阻。在此,优选使用具有在0.1mm和1mm之间的提高的层厚度d2的铝层4、4’。
在未示出的实施方案变型形式中,在制造粘接连接6之前,更确切地说尤其在铝层4、4’阳极氧化之后,根据图2和图5的第一复合层和/或第二复合层2、2’的具有较大层厚度d1的铜层3、3’优选通过冲制、激光或水射束切割,也就是说,不使用耗费的掩模和蚀刻技术就已经被预结构化。由此,可以降低在结构化的铜部段之间的等槽宽(Isograbenbreiten)。
在根据本发明的、用于制造这种基底1的方法中,复合层2、2’、2”通过将铜薄膜与铝薄膜轧制包覆或者铜薄膜、铝薄膜和另一铝薄膜轧制包覆方式制造,更确切地说,优选以带的形式制造。然而,要理解的是:所描述的复合层2、2’、2”能够作为板材制造。因此,尽管被轧制包覆然而尚未阳极氧化的复合层2、2’、2”有利地能够作为在卷上的带提供或以板形式提供,以用于另外的生产工艺。
所准备的复合层2、2’、2”的铝层4、4’的随后的阳极氧化优选在连续式设施或相应的浸槽中进行。最后,阳极氧化的复合层2、2’通过施加粘接剂层6、6’彼此连接或与金属层7连接。在粘接剂层6、6’完全硬化之前或之后,切割带材或板材并且紧接着干燥。紧接着,分别能够构成为多重基底的、干燥的单层或板借助已知的掩模和蚀刻技术被掩模和蚀刻,并且由此对铜层3、3’中的至少一个执行预设的结构化。替选地,在提高层厚度的铜层3、3’中,铜层3、3’的结构化能够通过冲制或借助激光单元或水射束单元切割来进行。在执行最终清洁之后,能够分割基底1,更确切地说,优选利用激光单元或机械的分离方法来分割基底1。
也就根据本发明的意义而言,铜层3、3’、3”也应理解为铜合金层。
在根据图6和图7的根据本发明的基底10的一个替选的实施方式中,基底10的绝缘强度通过以下方式再提高:代替金属层7使用陶瓷纸层11。为此,基底10具有复合层12,所述复合层具有金属层13和至少一个铝层14。因此,复合层12的铝层14同样至少部分地以阳极氧化方式构成,使得产生阳极氧化层15,所述阳极氧化层又经由粘接剂层16与陶瓷纸层11连接。在此,阳极氧化层15尤其用作附着改进件,以便铝层14的本身光滑的表面通过粗化的阳极氧化层15替代,所述阳极氧化层确保在陶瓷纸层11和复合层12之间的粘接连接的高的附着力。
在此,将陶瓷纸层11理解为在纸制造中聚集能烧结的陶瓷粉末、优选氧化铝粉末的纸结构(Papiergefüge),其中由所述粉末产生预陶瓷化的纸结构。能烧结的陶瓷粉末占预陶瓷化的纸结构的份额优选在80重量%和90重量%之间。预陶瓷化的纸结构经受两级的热转化过程,并且在第一级中由预陶瓷化的纸结构(“绿变物”)首先产生“褐变物”,其中预陶瓷化的纸结构的有机组分,例如纤维素、淀粉和乳胶以氧化方式除去。紧接着,在第二级中,“褐变物”输送给烧结工艺,由此产生陶瓷材料,更确切地说,具有陶瓷材料的典型的材料特性、例如高的抗弯强度和绝缘强度的陶瓷纸。然而,与传统的陶瓷层相比,陶瓷纸层11更轻并且在执行热转化工艺之前能单独地变形。由于可变形性,陶瓷纸层11的原材料,更确切地说,预陶瓷化的纸结构也能够有利地作为卷材仓储并且进一步加工。根据本发明使用的陶瓷纸层11例如具有50μm和600mm之间,优选80μm和150mm之间的层厚度d6并且具有在90σPa和150σPa之间的弹性模量。
金属层13的结构化再次借助已知的掩模和蚀刻技术,优选在建立与陶瓷纸层11的粘接连接之后进行。
在另一实施方案变型形式中,使用复合层12’,所述复合层除铜层13和铝层14之外具有连接于其的铝-硅层18,所述铝-硅层同样通过轧制包覆制造,更确切地说,优选首先由铝层14和与其连接的铝-硅层18通过轧制包覆产生复合件,并且该复合件重新用铜层13轧制包覆。复合层12’的铝-硅层18经由焊料层19与陶瓷纸层11连接。例如,在图7中示意性示出相应构成的基底10。由氧化铝制造的陶瓷纸层11的焊接在保护气体、例如N2或AR下,并且利用铝-硅共晶体进行。
此外,根据本发明,在使用具有低的黏度的粘胶时,还通过如下方式浇注存在于绝缘层5、5’中的裂纹:即复合层2、2’相应地被加热,然而低于粘胶的硬化温度,以便有针对性地在薄弱处产生裂纹,紧接着,粘胶能够进入所述裂纹中。通过应用120℃直至160℃的相应的工艺温度,也扩张现有的裂纹,从而能够简单地用粘胶填充。在此,温度提高能够以逐级或连续的方式在预设的时间段期间进行。有利地,在以逐级方式的提高温度时,可能包含在粘胶中的接合剂蒸发。在此,常用的粘胶的硬化温度例如高于180℃。在本发明的实施方案变型形式中,所述粘胶也能够聚集有纳米纤维,以改进所使用的粘接剂的传导能力。
借助轧制包覆制造的复合层2、2’优选具有与铜层3、3’明显更薄的铝层4、4’、4”,更确切地说,铝层4、4’、4”的层厚度d2小于铜层3、3’的层厚度d1的一半,优选甚至小于铜层3、3’的层厚度d1的三分之一。尤其在此,将铝层4、4’、4”通过相应的阳极氧化完全变换成绝缘层5、5’、5”是有利的,因为能够防止因铝从至少部分存在的铝层4、4’、4”中脱离而污染蚀刻池。因此,铝层4、4’、4”的在变换成绝缘层5、5’、5”之后的残留的层厚度优选保持得尽可能地小。
在复合件中成功涂覆粘胶之后,不同的复合层或层之间的粘接连接也能够借助层压或轧制进行,以便将粘接剂层6的层厚度d4保持得小。
此外,基底1在粘胶涂覆之后能够加载真空,以便能够除去在由氧化铝构成的阳极氧化层或绝缘层5中存在的气体封入物,所述气体封入物促进其提高进而使绝缘强度变差。在另一实施方案变型形式中,相应的粘接剂层6、6’、6”具有至少两种不同的粘接剂,所述粘接剂优选以层状方式相继涂覆。例如能够使用不同黏度的粘接剂,其中具有较低黏度的粘接剂设置用于填充相应的阳极氧化层5、5’、5”中的缺陷部位、如裂纹或孔,并且具有较高黏度的另一粘接剂设置用于建立层复合件的粘接连接。
例如能够用环氧化物粘胶粘接并且仅用纯的环氧化物填充缺陷部位,也就是说,无需硬化剂份额。与环氧树脂粘胶相比,环氧化物有利地能够在较高温度下加工,以便降低其黏度。也能够除去过量的填充材料,尤其环氧化物,使得基本上仅仍在缺陷部位残留环氧化物。在下一步骤中,然后,施加环氧化物粘胶。在此,环氧化物粘胶的硬化剂份额也扩散到被填充的缺陷部位中的纯的、已经加工的环氧化物中并且其同样随之硬化。
在包括铜层或铜合金层23和铝层或铝合金层24的轧制包覆的复合层25的阳极氧化中,强制性必需的是,绝不发生两种金属与阳极氧化池20的电解液21的接触,因为否则经由铜层或铜合金层23产生一种并联于铝层或铝合金层24的进行阳极氧化的表面的短路。该短路阻碍:经由在阳极氧化处理之前通常已经存在的薄的氧化物层(Al2O3)能够构建足够的电压。该产生的电压分别局部地击穿薄的氧化物层(Al2O3)并且导致将处于下方的铝氧化成氧化铝。图8根据示意图示出具有阳极22和通过铜层或铜合金层23构成的阴极的相应的阳极氧化池20,在所述阳极上施加直流电压U。
发明人认识到:通过以下方式能够克服这种短路的产生:即通过框架形的覆盖元件进行铜层23的表面的完全的遮掩或覆盖,也就是说,有效防止电解液21与铜层23接触,而还存在到铝层24的对于阳极氧化必需的接触。在替选的实施方案变型形式中,遮掩也能够通过施加保护薄膜或保护漆或其组合进行。这些方法的共同点分别是相对电解液11的密封作用。
在一个替选的实施方案变型形式中,通过辅助电极26、例如如下金属板或部件进行电场的遮掩或覆盖,所述部件或板能够设有相应的覆层并且相对阳极氧化池20的所使用的化学组成部分以及存在的电场是稳定的。辅助电极26与阳极电连接,使得直流电压U或在辅助电极26和复合层25的铜层23的表面之间产生的电场等于零。由此,只要不进行铜层3的化学处理,就不需要铜层的表面的“机械”密封。因此,铜层23的“密封”以非接触式的方式进行。
在一个有利的实施方案变型形式中,在框架形的辅助电极25和容纳其中的复合层25的铝层或铝合金层24之间的间距x大于0mm,然而小于10mm,优选在0mm和1mm之间。
上述以实施例描述本发明。需理解的是,大量的变化以及变型是可行的,而没有由此脱离基于本发明的发明思想。
附图标记列表
1 基底
2 第一复合层
2’ 第二复合层
2” 第三复合层
3,3’,3” 铜层
4,4’,4”,4”’ 铝层
5,5’,5” 由氧化铝构成的阳极氧化层或绝缘层
6,6’,6” 粘接剂层
7 金属层
10 基底
11 陶瓷纸层
12,12’ 复合层
13 金属层、尤其铜层
14 铝层
15 由氧化铝构成的阳极氧化层或绝缘层
16 粘接剂层
18 铝-硅层
19 焊料层
20 阳极氧化池
21 电解液
22 阴极
23 铜层或铜合金层
24 铝层或铝合金层
25 复合层
26 辅助电极
P 轮廓化部
d1至d6 层厚度
U 直流电压
X 间距
Claims (15)
1.一种用于电气电路的基底(1,10),所述基底包括至少一个借助轧制包覆制造的第一复合层(2),所述第一复合层在轧制包覆之后具有至少一个铜层(3)和连接于所述铜层的铝层(4),其中至少所述铝层(4)的背离所述铜层(3)的表面侧被阳极氧化,以产生由氧化铝构成的、阳极氧化层或绝缘层(5),并且其中由氧化铝构成的所述阳极氧化层或所述绝缘层(5)经由至少一个粘接剂层(6,6’)与金属层(7)或至少一个第二复合层(2’)或至少一个陶瓷纸层(11)连接。
2.根据权利要求1所述的基底,
其特征在于,
所述第二复合层(2’)类似于所述第一复合层(2)构成。
3.根据权利要求1或2所述的基底,
其特征在于,
所述第二复合层(2’)具有阳极氧化层或绝缘层(5),并且所述第一复合层的和所述第二复合层(2,2’)的所述阳极氧化层或绝缘层(5,5’)经由至少一个所述粘接剂层(6)彼此连接。
4.根据权利要求1或2所述的基底,
其特征在于,
所述第一复合层和所述第二复合层(2,2’)经由至少一个另外的中间层分别借助粘接剂层(6,6’)彼此连接。
5.根据权利要求4所述的基底,
其特征在于,
所述中间层通过铝层(4”)形成,所述铝层在其彼此相对置的表面侧上阳极氧化,以产生由氧化铝构成的、两个相对置的阳极氧化层或绝缘层(5”)。
6.根据权利要求5所述的基底,
其特征在于,
所述中间层通过第三复合层(5”)形成,所述第三复合层包括铝层(4”)、铜层(3”)和另一铝层(4”’),其中所述铝层(4”,4”’)的背离所述铜层(3”)的所述表面侧分别阳极氧化,以产生由氧化铝构成的、两个相对置的阳极氧化层或绝缘层(5”)。
7.根据权利要求5或6所述的基底,
其特征在于,
所述第一复合层(5)的由氧化铝构成的所述阳极氧化层或所述绝缘层(5)经由粘接剂层(6)与所述中间层的由氧化铝构成的阳极氧化层或绝缘层(5”)中的一个阳极氧化层或绝缘层连接,并且所述第二复合层(5’)的由氧化铝构成的所述阳极氧化层或所述绝缘层(5’)经由另一粘接剂层(6’)与所述中间层的由氧化铝构成的另一阳极氧化层或另一绝缘层(5”)连接。
8.根据上述权利要求中任一项所述的基底,
其特征在于,
相应的所述铝层(4,4’,4”)在其层厚度(d2)的一部分之上被阳极氧化,和/或由至少部分变换的所述铝层(4,4’,4”)制造的所述绝缘层(5,5’,5”)的层厚度(d3)在5μm和50μm之间。
9.根据权利要求1至8中任一项所述的基底,
其特征在于,
所述基底(1)的至少一个铝层(4,4’,4”)被完全阳极氧化,并且所述铝层(4)完全变换成由氧化铝构成的所述阳极氧化层或所述绝缘层(5)。
10.根据上述权利要求中任一项所述的基底,
其特征在于,
所述铜层(3,3’,3”)具有在35μm和2mm之间的层厚度(d1),所述铝层(4,4’,4”)具有在10μm和300μm之间的层厚度(d2),并且所述金属层(7)具有在300μm和50mm之间的层厚度(d5)。
11.根据上述权利要求中任一项所述的基底,
其特征在于,
至少一个铝层(4,4’,4”)具有在执行阳极氧化方法之前引入的轮廓化部(P),所述轮廓化部例如包括多个金字塔形的或棱柱形的凹部。
12.根据上述权利要求中任一项所述的基底,
其特征在于,
所述第一复合层和所述第二复合层(2,2’)借助至少一个铝薄膜与铜薄膜轧制包覆来制造。
13.根据上述权利要求中任一项所述的基底,
其特征在于,
所述粘接剂层(6,6’,6”)由环氧树脂粘接剂、丙烯酸粘接剂或聚氨酯粘接剂制造,和/或用于制造所述粘接剂层(6,6’,6”)的粘接剂具有低的黏度。
14.根据上述权利要求中任一项所述的基底,
其特征在于,
所述铜层(3,3’)中的至少一个铜层被结构化成多个金属化部段,以构成印制导线、接触面和/或连接面。
15.一种用于制造用于电气电路的基底(1,10)的方法,其中由铜薄膜和至少一个铝薄膜借助轧制包覆制造至少一个第一复合层(2,2’),所述第一复合层具有至少一个铜层(3,3’)和连接于所述铜层的铝层(4,4’),其中将至少所述铝层(4,4’)的背离铜层(3,3’)的表面侧阳极氧化,并且由此产生由氧化铝构成的阳极氧化层或绝缘层(5),并且其中由氧化铝构成的、所产生的所述阳极氧化层或所述绝缘层(5)经由至少一个粘接剂层(6,6’)与金属层(7)或至少一个第二复合层(2’)或至少一个陶瓷纸层(11)粘接。
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DE102015111667.7 | 2015-07-17 | ||
PCT/EP2016/067069 WO2017013073A1 (de) | 2015-07-17 | 2016-07-18 | Substrat für elektrische schaltkreise und verfahren zur herstellung eines derartigen substrates |
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