CN107615460B - 原子层生长装置 - Google Patents

原子层生长装置 Download PDF

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Publication number
CN107615460B
CN107615460B CN201680031264.0A CN201680031264A CN107615460B CN 107615460 B CN107615460 B CN 107615460B CN 201680031264 A CN201680031264 A CN 201680031264A CN 107615460 B CN107615460 B CN 107615460B
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inert gas
mask
gas supply
susceptor
substrate
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CN107615460A (zh
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松本龙弥
鹫尾圭亮
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Japan Steel Works Ltd
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Japan Steel Works Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/308—Oxynitrides
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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    • C23C16/45519—Inert gas curtains
    • C23C16/45521—Inert gas curtains the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
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    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C16/45523—Pulsed gas flow or change of composition over time
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    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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Abstract

本发明是一种在基板上形成薄膜的原子层生长装置，具备：成膜容器；在成膜容器内设置的平台；在平台上保持基板的基座；配置在基板上且尺寸包围基板的掩模；能够支撑掩模上下可动的掩模销；以及在上下方向上贯通平台及基座并使掩模销能够以上下可动的方式插通的掩模销孔，基座具备：具有基板的保持面的基座主体；位于基座主体的周围且高度比保持面低的基座周缘部，掩模销孔在基座周缘部开口，在基座周缘部的掩模包围的区域内，在保持面的周围设置向上方侧排出气体的惰性气体供给口，惰性气体供给口与供给惰性气体的惰性气体供给路径连接。

Description

原子层生长装置
技术领域
本发明涉及在基板上形成薄膜的原子层生长装置。
背景技术
众所周知，原子层生长法是在基板上交互供给构成要形成的薄膜的元素的气体，在基板上以原子层单位形成薄膜，因此使薄膜均匀地形成的技术。原子层生长法与一般的CVD(Chemical Vapor Deposition：化学气相沉积)法比较，阶差覆盖性、膜厚控制性更佳。
传统的溅射成膜装置中，能够利用专利文献1那样的掩模。溅射成膜的膜的阶差覆盖性低，因此掩模背面的成膜量小，从而颗粒发生量少，保养周期也长。但是，在原子层生长成膜中，膜的阶差覆盖性高，因此掩模背面的沉积膜量多。侵入微细间隙的气体形成厚膜及粉末，成为颗粒的要因。尤其是为了维持掩模的平坦性，掩模的表面粗糙度不能变大，因此，掩模更换频度增大。
因而，在利用掩模的原子层生长成膜中，从基座周边吹扫惰性气体是有效的。专利文献2中，在平台设置气体供给口，从基座的背面供给惰性气体。
现有技术文献
专利文献
【专利文献1】日本专利特开2004-339581号公报
【专利文献2】日本专利特开2000-243711号公报
发明内容
发明所要解决的技术问题
但是，按照专利文献2所示装置，若在平台主体设置气体供给口，则平台的设计及制作变得复杂。因此，在基板尺寸变更时，平台本身的结构必须变更，因此存在通用性低的问题。
本发明以上述问题为背景而完成，目的之一是提供一种能够抑制掩模背面的沉积膜且容易应对基板尺寸的变更的原子层生长装置。
解决技术问题的技术方案
本发明的原子层生长装置中，第1方式是在基板上形成薄膜的原子层生长装置，其特征在于，具备：
成膜容器；
设置在所述成膜容器内的平台；
在所述平台上保持所述基板的基座；
配置在所述基板上且尺寸包围所述基板的掩模；
能够支撑所述掩模上下可动的掩模销；以及
在上下方向上贯通所述平台及所述基座并使所述掩模销能够以上下可动的方式插通的掩模销孔，
所述基座具备：具有所述基板的保持面的基座主体；位于所述基座主体的周围且高度比所述保持面低的基座周缘部，
所述掩模销孔在所述基座周缘部开口，
在所述基座周缘部的所述掩模包围的区域内，在所述保持面的周围设置向上方侧排出气体的惰性气体供给口，所述惰性气体供给口与供给惰性气体的惰性气体供给路径连接。
第2方式的原子层生长装置的本发明，其特征在于，在所述方式的本发明中，以所述基座主体为基准，在所述掩模销孔的外侧，设有所述惰性气体供给口。
第3方式的原子层生长装置的本发明，其特征在于，在所述方式的本发明中，所述惰性气体供给口在所述保持面的周围沿整个全周形成多个或在整个全周上连续形成。
第4方式的原子层生长装置的本发明，其特征在于，在所述方式的本发明中，所述惰性气体供给口相对于所述惰性气体供给路径具有喷淋头部构造。
第5方式的原子层生长装置的本发明，其特征在于，在所述方式的本发明中，所述掩模与所述基座周缘部之间形成的间隙为0.1mm以上，10mm以下。
第6方式的原子层生长装置的本发明，其特征在于，在所述方式的本发明中，所述掩模周缘端与所述惰性气体供给口的接近侧的距离为1mm以上，200mm以下。
第7方式的原子层生长装置的本发明，其特征在于，在所述方式的本发明中，在所述基座周缘部顶面设置有防粘构件。
第8方式的原子层生长装置的本发明，其特征在于，在所述方式的本发明中，所述惰性气体以平台面温度±10％以内的温度从所述惰性气体供给口排出。
发明效果
根据本发明能够抑制掩模背面的沉积膜，容易应对基板尺寸变更，因此，能够降低掩模及基座的清洁频度，且能够应对各种基板尺寸、工艺条件。
附图说明
图1是本发明一实施方式的原子层生长装置的省略了一部分的简要结构图。
图2是表示相同的从与气体流动方向平行的成膜室侧面观察时的基座周边的放大图。
图3是相同的基座周边的放大平面图。
图4是对于其他实施方式中的原子层生长装置，从与气体流动方向平行的成膜室侧面观察时的基座周边的放大图。
图5是相同的基座周边的放大平面图。
图6是表示本发明一实施方式中的原子层生长方法的一例流程图。
图7A、图7B、图7C、图7D是表示相同的在基板上形成薄膜的工序的示图。
具体实施方式
首先，参照图1，说明本实施方式的原子层生长装置的构成。图1是表示本实施方式的原子层生长装置的一例的简要结构图。
本实施方式的原子层生长装置10交互供给原料气体和反应气体，在基板13上以原子层单位形成薄膜。此时，为了提高反应活性，能够加热基板13。本实施方式中，采用TMA(Tri-Methyl Aluminum：三甲基铝)作为原料气体，此时，由于提高反应活性，产生等离子体。本实施方式中，在等离子体的产生中采用平行平板电极，但是不限于该方式。
成膜容器11具备：导入原料气体、反应气体、吹扫气体的气体导入部20；排气部30；平台14；平板电极12；高频电源15；基座16；基板搬入口17；在基板13上配置的掩模56。气体导入部20具有从成膜容器11外侧设置的喷射器21和从成膜容器11内侧设置的喷射器防粘构件22，排气部30具有从成膜容器11内侧设置的排气防粘构件31和从成膜容器11外侧设置的排气配管连接部32。
平台14具备加热器(未图示)，能够调节基板13的温度。例如，为等离子体原子层生长成膜的情况下，将基板13加热到50～200℃。
平板电极12与高频电源15连接。高频电源15通过供给规定频率的高频电流，在平板电极12和平台14之间生成等离子体。
基板13从平台14的下方由升降销18支撑。通过平台14的升降升降销18能够在传送室空间61移送基板13。
导入原料气体、反应气体、吹扫气体的气体导入部20向成膜容器11内供给原料气体、反应气体、吹扫气体。排气部30从成膜容器11向外部排出原料气体、反应气体、吹扫气体。
图1表示原子层生长装置的基本构造，以下说明的部分结构省略。
(实施方式1)
图2是从与气体流动方向平行的成膜室侧面观察时的基座16外周的放大图，图3是表示基座周边的一部分的放大平面图。
基座16由平台14支撑，具备：在顶面具有保持基板13的保持面160的基座主体16A；位于其周围且高度面比保持面160低的基座周缘部16B。保持面160具有与基板13的尺寸匹配的形状。
掩模56设置在基座16上，具有包围基板13的尺寸。在本发明没有特别限定尺寸要超过基板13，但是在该实施方式中，超过基板13的尺寸设为50mm以下。
在接近保持面160侧的顶面，基座周缘部16B形成惰性气体供给口48，该实施方式中，以凹槽形状形成为包围基座主体16A。而且，在凹槽内设置环形板状的喷淋板49，使得与槽的底面和槽的内外周面之间具有小间隙。
喷淋板49例如通过在底面形成不连续的突部，能够确保与槽底面之间的间隙，另外，通过形成比槽的内外周宽度要狭窄的宽度，能够在槽的内外周面之间形成小间隙。另外，在喷淋板，例如也可以以规定间隔(例如100mm间距)形成规定直径(例如1mm直径)的吹出孔49A。
另外，喷淋板49优选为覆盖基板13的周围。
通过上述喷淋板49，惰性气体供给口48具有喷淋头部构造。通过喷淋头部构造，能够在基座主体16A的周围均等地吹出惰性气体。
基座周缘部16B在内部具有与上述惰性气体供给口48连通的惰性气体供给路径47，该惰性气体供给路径47的终端达到基座周缘部16B的外周壁。惰性气体供给路径47可以形成一个或多个，例如，能够以3mm直径形成。
惰性气体供给路径47与在基座16的外周侧配置的惰性气体供给管46连接，惰性气体供给管46的另一端侧与设置于成膜容器11的惰性气体通气口45连接。惰性气体通气口45与未图示的惰性气体供给部连接。
惰性气体供给管46例如能够由不锈钢制管、波纹柔性管等构成。向成膜容器11内搬入或搬出基板13时虽然平台14上下移动，但是惰性气体供给管46需要追随其上下运行。惰性气体供给管46也构成惰性气体供给路径的一部分。
另外，基座周缘部16B中，在惰性气体供给口48的外周侧，形成贯通平台14及基座周缘部16B的掩模销孔40，在掩模销孔40内，插入能够上下运行并能够上下移动掩模56的掩模销41。
另外，基座周缘部16B中，除了惰性气体供给口48及掩模销孔40，顶面的露出面被基座防粘板19覆盖。基座防粘板19的顶面高度优选为与喷淋板49的顶面高度处于一个面。
这里，由掩模56底面和基座防粘板19顶面形成的距离a优选为在0.1mm以上，10mm以下，进一步优选为1mm。距离a越小，越能够抑制侵入间隙的原料气体及反应气体量，需要的惰性气体供给量也越低。掩模优选为绝缘体，也可以是不锈钢等的金属。但是，掩模为金属时，可能在上述间隙放电。该情况下，利用帕邢定律，调节上述间隙的压力，使得上述距离a与上述间隙的压力的积不满足放电条件。
另外，掩模56的外周缘端与基座防粘板19重叠的距离b即与惰性气体供给口48的外周侧端部的距离优选为在1mm以上，200mm以下，进一步优选为20mm。这是因为，距离b若小，则即使供给惰性气体，由于原料气体及反应气体的扩散，仍然存在侵入喷淋板49的可能性。值若过大，则掩模及真空容器尺寸也变大，因此不适宜。
从惰性气体供给部供给的惰性气体经由惰性气体通气口45、惰性气体供给管46、惰性气体供给路径47、惰性气体供给口48，经由喷淋板49，通过喷淋板49与惰性气体供给口48之间的间隙、吹出孔49A而吹出。惰性气体通过由掩模56和基座防粘板19形成的间隙，向基座16的外周侧排气，通过排气部30排出。
另外，优选为在基座周缘部16B上设置基座防粘板19，但是也可以仅仅是基座周缘部16B。此时，基座周缘部16B顶面与掩模56底面的距离成为a，从掩模56外周端到喷淋板49的外周端侧为止的距离成为b。
另外，惰性气体优选为加热到平台温度±10％以内的温度后从上述惰性气体供给口48释放。例如，将平台加热到100℃时，若供给常温的惰性气体，则由于基座16外周冷却，因此，基板13的温度分布也降低，膜厚均匀性及膜质均匀性降低。因此，为了将基座16的温度保持一定，例如优选为供给90～110℃的惰性气体。
(实施方式2)
图4是优化了图2的惰性气体供给口的设置位置的基座结构。
掩模销孔40无法完全密封成膜空间60和传送室空间61的情况下，两者若存在压力差，则气体向某一方流动。
平台14、基座16及传送室空间61通常难以进行保养。因此，若在这些部分产生颗粒，则难以去除颗粒。例如，在掩模销孔40存在颗粒的状态下，若传送室空间61为正压，成膜空间60为负压，则颗粒随着气体流向成膜空间60释放，颗粒附着到基板13，因此是不适宜的。因此，优选为成膜空间60为正压，传送室空间61为负压。
但是，为图2所示的基座构造的情况下，根据成膜空间60和传送室空间61的压力差，掩模销孔40可能吸入从惰性气体供给口48供给的惰性气体，同时吸入原料气体及反应气体。即使是同压，通过扩散，原料气体及反应气体可能扩散到掩模销孔。由于吸入的原料气体及反应气体反应，因此在掩模销孔产生颗粒。因此，如图4，惰性气体供给口优选为设置在掩模销孔40的外周侧。
根据图4说明上述的原子层生长装置的结构。另外，原子层生长装置的基本构成如图1所示，与上述实施方式1同样，省略或简化其记载。
图4是从与气体流动方向平行的成膜室侧面观察时的基座16外周的放大图，图5是表示基座周边的一部分的放大平面图。
与上述实施方式1同样，基座16由平台14支撑，具备：具有保持基板13的保持面160的基座主体16A；位于其周围且高度比保持面160低的基座周缘部16B。保持面160具有与基板13的尺寸匹配的形状。
掩模56设置在基座16上，具有包围基板13的尺寸。超过基板13的尺寸也与实施方式1同样设为50mm以下。
基座周缘部16B在接近保持面160的位置的顶面，形成多个贯通平台14及基座周缘部16B的掩模销孔40，在掩模销孔40内插入能够上下运行并使掩模56上下移动的掩模销41。
以基座主体16A为基准，在掩模销孔40的外周侧，惰性气体供给口50形成为以凹槽形状包围基座主体16A，在该凹槽内设置喷淋板51，使得与槽的底面和内外周面之间具有小间隙。喷淋板51通过例如在底面形成不连续的突部，能够确保与槽底面之间的间隙。另外，在喷淋板51，例如也可以以规定间隔(例如10～200mm间距)形成规定直径(例如1mm～3mm直径)的吹出孔51A。
另外，喷淋板51优选为覆盖基板13的周围。
通过上述喷淋板51，惰性气体供给口50具有了喷淋头部构造。
另外，喷淋头部构造中，可以通过在基座周缘部16B设置吹出孔，来制作喷淋板，也可以单独制作喷淋板，并安装到基座周缘部16B。
另外，基座周缘部16B中，除了掩模销孔40及惰性气体供给口50，顶面的露出面被基座防粘板19A覆盖。基座防粘板19A的顶面高度优选为与喷淋板51的顶面高度处于一个面。
基座周缘部16B在内部具有与上述惰性气体供给口50连通的惰性气体供给路径47，该惰性气体供给路径47的终端达到基座周缘部16B的外周壁。惰性气体供给路径47可以形成一个或多个，例如，能够以3mm直径形成。
惰性气体供给路径47与在基座16的外周侧配置的惰性气体供给管46连接，惰性气体供给管46的另一端侧与设置于成膜容器11的惰性气体通气口45连接。惰性气体通气口45与未图示惰性气体供给部连接。惰性气体供给管46例如能够由不锈钢制管、波纹柔性管等构成。
由掩模56底面和基座防粘板19A顶面形成的距离a优选为在0.1mm以上，10mm以下，进一步优选为1mm。距离a越小，越能够抑制侵入间隙的原料气体及反应气体量，需要的惰性气体供给量也越低。掩模优选为是绝缘体，也可以是不锈钢等的金属。但是，掩模为金属时，可能在上述间隙放电。该情况下，利用帕邢定律，调节上述间隙的压力，使得上述距离a与上述间隙的压力的积不满足放电条件。
另外，掩模56的外周缘端部与基座防粘板19A重叠的距离b即与惰性气体供给口50的外周侧端部的距离优选为在1mm以上，200mm以下，进一步优选为20mm。这是因为，距离b若小，则即使供给惰性气体，由于原料气体及反应气体的扩散，仍然可能侵入喷淋板51。值若过大，则掩模及真空容器尺寸也变大，因此不理想。
但是，该实施方式中，惰性气体在掩模销40的外周侧吹出，抑制原料气体、反应气体的扩散的作用较大。
从惰性气体供给部供给的惰性气体通过惰性气体通气口45、惰性气体供给管46、惰性气体供给路径47、惰性气体供给口50，经由喷淋板51，通过与惰性气体供给口50之间的间隙、吹出孔51A而吹出，通过由掩模56和基座防粘板19A形成的间隙，供给到排气部30。
另外，优选在基座周缘部16B上设置基座防粘板19A，但是也可以仅仅为基座周缘部16B。此时，基座周缘部16B顶面与掩模56底面的距离成为a，从掩模56外周端到喷淋板51的外周端侧为止的距离成为b。
上述各实施方式中，在基板13的尺寸变更的情况下，能够通过变更基座16的尺寸来应对，不必变更平台结构。另外，当改变工艺条件时，尽管涉及惰性气体供给条件，但是也可以仅改变惰性气体供给口和喷淋板。
接着，说明上述原子层生长装置10中的处理顺序。
图6是表示本实施方式的原子层堆积方法的一例的流程图。图7A～7D是表示在基板S上形成薄膜的工序的图。
首先，原料气体供给部向成膜容器11的内部供给原料气体(步骤s1)。具体地说，向气体导入部20供给原料气体。原料气体供给到成膜容器11的内部。原料气体例如在0.1秒期间供给到成膜容器11的内部。如图7A所示，通过步骤s1，向成膜容器11的内部供给原料气体110，原料气体110吸附到基板S上，形成吸附层102。
另外，步骤s1中，向喷射器21的内表面及喷射器防粘构件22的外表面供给惰性气体。另外，排出部30中，也向排气防粘构件31及排气配管连接部32供给惰性气体。而且，基座周缘部16B中也供给惰性气体。
本实施方式中，不仅在步骤s1，还包含后述步骤s2～s4，恒定地供给惰性气体。因此，步骤s1中，向成膜容器11的内部供给原料气体时，能够抑制原料气体进入成膜容器11与喷射器防粘构件22之间的间隙、成膜容器11与排气防粘构件31之间的间隙及掩模56与基座16之间的间隙。
接着，停止原料气体的供给，由气体导入部供给吹扫气体(步骤s2)。吹扫气体供给到成膜容器11的内部。原料气体从排气部30向成膜容器11的外部排出。
吹扫气体例如在0.1秒期间供给到成膜容器11的内部。排气部30排出成膜容器11的内部的原料气体110、吹扫气体112。排气部30例如在2秒期间排出成膜容器11的内部的原料气体110、吹扫气体112。如图7B所示，通过步骤s2向成膜容器11的内部供给吹扫气体112，从成膜容器11吹扫未吸附在基板S上的原料气体110。
接着，向成膜容器11的内部供给反应气体(步骤s3)。具体地说，经由气体导入部20供给反应气体。反应气体经由气体导入部20的通路，供给到成膜容器11的内部。反应气体例如在1秒期间供给到成膜容器11的内部。如图7C所示，通过步骤s3，向成膜容器11的内部供给反应气体114。
另外，步骤s3中，也在喷射器21的内表面、喷射器防粘构件22的外表面、排气部30、基座周缘部16B供给惰性气体。因此，步骤S3中，向成膜容器11的内部供给反应气体时，能够抑制反应气体进入成膜容器11与喷射器防粘构件22之间的间隙、成膜容器11与排气防粘构件31之间的间隙及掩模56与基座16之间的间隙。
接着，停止反应气体的供给，向气体导入部20供给吹扫气体(步骤s4)。吹扫气体供给到成膜容器11的内部。吹扫气体从排气部30向成膜容器11的外部排出。吹扫气体例如在0.1秒期间供给到成膜容器11的内部。排气部30排出成膜容器11的内部的反应气体114、吹扫气体112。如图7D所示，通过步骤s4，向成膜容器11的内部供给吹扫气体112，从成膜容器11吹扫反应气体114。
通过以上说明的步骤s1～s4，在基板S上形成一原子层量的薄膜层104。以下，通过以规定次数反复步骤s1～s4，能够形成期望膜厚的薄膜层104。
本实施方式的原子层生长装置10中，惰性气体在喷射器21的内表面及喷射器防粘构件22的外表面流过，因此能够抑制原料气体、反应气体进入成膜容器11与喷射器21之间的间隙。因此，能够抑制薄膜附着到成膜容器11与喷射器21之间的间隙。另外，排气部30也同样防止薄膜的附着。
而且，在基座周缘部16B，惰性气体流出，因此，防止了对于掩模底面、基板侧面及基板底面、基座等的沉积膜。
另外，例如，用TMA作为原料气体，用O3作为反应气体所形成的氧化铝膜能够通过BCl3气体进行气体蚀刻。为了通过BCl3气体对氧化铝膜进行气体蚀刻，例如，需要加热到500℃左右的高温。
在平台14设置加热器(未图示)，位于该加热器的附近的成膜容器11的内壁能够通过加热器加热到500℃左右的高温。因此，附着在位于加热器的附近的成膜容器11的内壁的薄膜能够通过气体蚀刻去除。
如上所述，根据本实施方式，能够抑制薄膜附着到成膜容器11的内壁、基座等，另外，附着于内壁、基座的薄膜能够通过气体蚀刻去除，因此，能够降低通过湿法蚀刻进行的清洁的频度。
【实施例1】
采用图1、图4所示的原子层生长装置，在370mm×470mm的G2玻璃基板形成AlON薄膜。本原子层生长装置的各种值如下设置。
a:1mm
b:20mm
喷淋孔径:1mm
喷淋间距:100mm
平台温度:100℃
惰性气体温度:100℃
惰性气体流量:500sccm
采用TMA(三甲基铝)作为液体原料(Al源)，采用氧等离子体和氮等离子体作为反应气体。成膜采用图6所示的工序。成膜容器内压力设为100Pa，通过惰性气体供给部供给500sccm的氮气，在成膜工序中恒定供给。
实施20μm的成膜后，目视观察掩模56底面和基座防粘板19A顶面的沉积膜量时，未观测到薄膜的干涉膜，其膜量确认在50nm以下。因此，可确认到：能容易应对基板尺寸变更、工艺条件变更的构造，并且能够降低掩模及基座的清洁频度。
以上，根据上述实施方式说明了本发明，但是只要不脱离本发明的范围，就能够进行本实施方式中的适宜变更。
本申请主张2015年5月26日在日本申请的日本专利特愿2015-106856号的优先权，参考并引用该申请所述的全部内容。
标号说明
10 原子层生长装置
11 成膜容器
13 基板
14 平台
15 高频电源
16 基座
16A 基座主体
16B 基座周缘部
19 基座防粘板
19A 基座防粘板
20 气体导入部
30 排气部
40 掩模销孔
46 惰性气体供给管
47 惰性气体供给路径
48 惰性气体供给口
49 喷淋板
49A 吹出孔
50 惰性气体供给口
50A 吹出孔
51 喷淋板
56 掩模
S 基板
102 吸附层
104 薄膜层
110 原料气体
112 吹扫气体
114 反应气体。

Claims (7)

1.一种原子层生长装置，是在基板上形成薄膜的原子层生长装置，其特征在于，具备：
成膜容器；
设置在所述成膜容器内的平台；
在所述平台上保持所述基板的基座；
配置在所述基板上且尺寸包围所述基板的掩模；
能够支撑所述掩模上下可动的掩模销；以及
在上下方向上贯通所述平台及所述基座并使所述掩模销能够以上下可动的方式插通的掩模销孔，
所述基座具备：具有所述基板的保持面的基座主体；位于所述基座主体的周围且高度比所述保持面低的基座周缘部，
所述掩模销孔在所述基座周缘部开口，
在所述基座周缘部的所述掩模包围的区域内，以所述基座主体为基准，在所述掩模销孔的开口的外侧，在所述保持面的周围设置向上方侧排出气体的惰性气体供给口，所述惰性气体供给口与供给惰性气体的惰性气体供给路径连接。
2.如权利要求1所述的原子层生长装置，其特征在于，
所述惰性气体供给口在所述保持面的周围沿整个全周形成多个或在整个全周上连续形成。
3.如权利要求1或2所述的原子层生长装置，其特征在于，
所述惰性气体供给口相对于所述惰性气体供给路径具有喷淋头部构造。
4.如权利要求1或2所述的原子层生长装置，其特征在于，
所述掩模与所述基座周缘部之间形成的间隙为0.1mm以上，10mm以下。
5.如权利要求1或2所述的原子层生长装置，其特征在于，
所述掩模周缘端与所述惰性气体供给口的接近侧的距离为1mm以上，200mm以下。
6.如权利要求1或2所述的原子层生长装置，其特征在于，
在所述基座周缘部顶面设置有防粘构件。
7.如权利要求1或2所述的原子层生长装置，其特征在于，
所述惰性气体以平台面温度±10％以内的温度从所述惰性气体供给口排出。
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