CN107086051A - 半导体存储装置 - Google Patents
半导体存储装置 Download PDFInfo
- Publication number
- CN107086051A CN107086051A CN201610585571.5A CN201610585571A CN107086051A CN 107086051 A CN107086051 A CN 107086051A CN 201610585571 A CN201610585571 A CN 201610585571A CN 107086051 A CN107086051 A CN 107086051A
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
- G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/24—Bit-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/562—Multilevel memory programming aspects
- G11C2211/5621—Multilevel programming verification
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011118720.XA CN112233713B (zh) | 2016-02-12 | 2016-07-22 | 半导体存储装置 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016025096A JP6490018B2 (ja) | 2016-02-12 | 2016-02-12 | 半導体記憶装置 |
JP2016-025096 | 2016-02-12 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202011118720.XA Division CN112233713B (zh) | 2016-02-12 | 2016-07-22 | 半导体存储装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107086051A true CN107086051A (zh) | 2017-08-22 |
CN107086051B CN107086051B (zh) | 2020-11-06 |
Family
ID=59562217
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610585571.5A Active CN107086051B (zh) | 2016-02-12 | 2016-07-22 | 半导体存储装置 |
Country Status (4)
Country | Link |
---|---|
US (4) | US10037813B2 (zh) |
JP (1) | JP6490018B2 (zh) |
CN (1) | CN107086051B (zh) |
TW (4) | TWI714901B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110895957A (zh) * | 2018-09-13 | 2020-03-20 | 东芝存储器株式会社 | 半导体存储装置 |
CN112447232A (zh) * | 2019-08-28 | 2021-03-05 | 铠侠股份有限公司 | 半导体存储装置 |
WO2023151149A1 (zh) * | 2022-02-08 | 2023-08-17 | 长鑫存储技术有限公司 | 感应放大器电路、其控制方法以及其制备方法 |
Families Citing this family (22)
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JP3935139B2 (ja) | 2002-11-29 | 2007-06-20 | 株式会社東芝 | 半導体記憶装置 |
JP5814867B2 (ja) * | 2012-06-27 | 2015-11-17 | 株式会社東芝 | 半導体記憶装置 |
JP2017111847A (ja) * | 2015-12-17 | 2017-06-22 | 株式会社東芝 | 半導体記憶装置 |
JP6490018B2 (ja) * | 2016-02-12 | 2019-03-27 | 東芝メモリ株式会社 | 半導体記憶装置 |
US9952944B1 (en) | 2016-10-25 | 2018-04-24 | Sandisk Technologies Llc | First read solution for memory |
US10262743B2 (en) * | 2016-10-25 | 2019-04-16 | Sandisk Technologies Llc | Command sequence for first read solution for memory |
US10095568B2 (en) | 2017-02-08 | 2018-10-09 | Seagate Technology Llc | Background reads to condition programmed semiconductor memory cells |
US9940232B1 (en) | 2017-02-08 | 2018-04-10 | Seagate Technology Llc | Post-program conditioning of stacked memory cells prior to an initial read operation |
JP6983617B2 (ja) * | 2017-10-17 | 2021-12-17 | キオクシア株式会社 | 半導体記憶装置 |
US10347315B2 (en) | 2017-10-31 | 2019-07-09 | Sandisk Technologies Llc | Group read refresh |
JP2020038746A (ja) | 2018-09-06 | 2020-03-12 | キオクシア株式会社 | 半導体記憶装置 |
JP2020047329A (ja) | 2018-09-18 | 2020-03-26 | キオクシア株式会社 | 半導体記憶装置 |
JP2020047347A (ja) | 2018-09-19 | 2020-03-26 | キオクシア株式会社 | 半導体記憶装置 |
JP2020102290A (ja) | 2018-12-21 | 2020-07-02 | キオクシア株式会社 | 半導体記憶装置 |
JP2020140747A (ja) * | 2019-02-27 | 2020-09-03 | キオクシア株式会社 | 半導体記憶装置 |
JP2020145372A (ja) | 2019-03-08 | 2020-09-10 | キオクシア株式会社 | 半導体記憶装置 |
JP2020155577A (ja) * | 2019-03-20 | 2020-09-24 | キオクシア株式会社 | 半導体記憶装置 |
JP2020202002A (ja) * | 2019-06-11 | 2020-12-17 | キオクシア株式会社 | 半導体記憶装置 |
JP2021072313A (ja) * | 2019-10-29 | 2021-05-06 | キオクシア株式会社 | 半導体記憶装置 |
JP6966587B2 (ja) * | 2020-03-02 | 2021-11-17 | ウィンボンド エレクトロニクス コーポレーション | 半導体記憶装置および読出し方法 |
JP2022144309A (ja) | 2021-03-18 | 2022-10-03 | キオクシア株式会社 | 半導体記憶装置 |
JP7391232B2 (ja) | 2021-03-19 | 2023-12-04 | チャンシン メモリー テクノロジーズ インコーポレイテッド | データ処理回路及び機器 |
Citations (4)
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US20090237992A1 (en) * | 2008-03-19 | 2009-09-24 | Hiroshi Maejima | Semiconductor memory device having stacked gate including charge accumulation layer and control gate |
CN101937714A (zh) * | 2009-06-30 | 2011-01-05 | 海力士半导体有限公司 | 操作非易失存储器器件的方法 |
US20120069674A1 (en) * | 2010-09-20 | 2012-03-22 | Samsung Electronics Co., Ltd. | Flash memory device and related program verification method |
US20130033937A1 (en) * | 2011-08-05 | 2013-02-07 | Micron Technology, Inc. | Methods for program verifying a memory cell and memory devices configured to perform the same |
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US7447078B2 (en) * | 2005-04-01 | 2008-11-04 | Sandisk Corporation | Method for non-volatile memory with background data latch caching during read operations |
KR100706252B1 (ko) * | 2005-07-27 | 2007-04-12 | 삼성전자주식회사 | 노어 플래시 메모리 장치 및 그것의 프로그램 방법 |
JP5016832B2 (ja) | 2006-03-27 | 2012-09-05 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法 |
US7697338B2 (en) * | 2006-11-16 | 2010-04-13 | Sandisk Corporation | Systems for controlled boosting in non-volatile memory soft programming |
JP4936914B2 (ja) * | 2007-01-23 | 2012-05-23 | 株式会社東芝 | 半導体記憶装置 |
JP5127350B2 (ja) * | 2007-07-31 | 2013-01-23 | 株式会社東芝 | 半導体記憶装置 |
US7957197B2 (en) * | 2008-05-28 | 2011-06-07 | Sandisk Corporation | Nonvolatile memory with a current sense amplifier having a precharge circuit and a transfer gate coupled to a sense node |
JP5529858B2 (ja) * | 2008-06-12 | 2014-06-25 | サンディスク テクノロジィース インコーポレイテッド | インデックスプログラミングおよび削減されたベリファイを有する不揮発性メモリおよび方法 |
US7826271B2 (en) * | 2008-06-12 | 2010-11-02 | Sandisk Corporation | Nonvolatile memory with index programming and reduced verify |
JP5193830B2 (ja) * | 2008-12-03 | 2013-05-08 | 株式会社東芝 | 不揮発性半導体メモリ |
US8218381B2 (en) * | 2009-11-24 | 2012-07-10 | Sandisk Technologies Inc. | Programming memory with sensing-based bit line compensation to reduce channel-to-floating gate coupling |
US8223556B2 (en) * | 2009-11-25 | 2012-07-17 | Sandisk Technologies Inc. | Programming non-volatile memory with a reduced number of verify operations |
JP2011150749A (ja) * | 2010-01-20 | 2011-08-04 | Toshiba Corp | 不揮発性半導体記憶装置 |
KR101662309B1 (ko) * | 2010-02-08 | 2016-10-04 | 삼성전자주식회사 | 비휘발성 메모리 장치의 프로그램 방법 |
US8208310B2 (en) * | 2010-05-04 | 2012-06-26 | Sandisk Technologies Inc. | Mitigating channel coupling effects during sensing of non-volatile storage elements |
KR20110131648A (ko) * | 2010-05-31 | 2011-12-07 | 삼성전자주식회사 | 비휘발성 메모리 장치, 그것을 포함한 메모리 시스템 및 메모리 카드 및 그것의 프로그램 방법 |
KR101775660B1 (ko) * | 2011-09-29 | 2017-09-07 | 삼성전자주식회사 | 워드 라인 전압의 변화없이 상이한 문턱 전압들을 갖는 메모리 셀들을 읽는 방법 및 그것을 이용한 불 휘발성 메모리 장치 |
KR101785448B1 (ko) * | 2011-10-18 | 2017-10-17 | 삼성전자 주식회사 | 비휘발성 메모리 장치 및 이의 프로그램 방법 |
JP2013122799A (ja) * | 2011-12-09 | 2013-06-20 | Toshiba Corp | 不揮発性半導体記憶装置 |
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2016
- 2016-02-12 JP JP2016025096A patent/JP6490018B2/ja active Active
- 2016-07-05 TW TW107138973A patent/TWI714901B/zh active
- 2016-07-05 TW TW109141405A patent/TWI768562B/zh active
- 2016-07-05 TW TW106129832A patent/TWI650758B/zh active
- 2016-07-05 TW TW105121270A patent/TWI607449B/zh active
- 2016-07-22 CN CN201610585571.5A patent/CN107086051B/zh active Active
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2017
- 2017-01-12 US US15/405,098 patent/US10037813B2/en active Active
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2018
- 2018-06-27 US US16/020,907 patent/US10319450B2/en active Active
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2019
- 2019-05-13 US US16/410,815 patent/US10614900B2/en active Active
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2020
- 2020-02-25 US US16/800,180 patent/US10796779B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090237992A1 (en) * | 2008-03-19 | 2009-09-24 | Hiroshi Maejima | Semiconductor memory device having stacked gate including charge accumulation layer and control gate |
CN101937714A (zh) * | 2009-06-30 | 2011-01-05 | 海力士半导体有限公司 | 操作非易失存储器器件的方法 |
US20120069674A1 (en) * | 2010-09-20 | 2012-03-22 | Samsung Electronics Co., Ltd. | Flash memory device and related program verification method |
US20130033937A1 (en) * | 2011-08-05 | 2013-02-07 | Micron Technology, Inc. | Methods for program verifying a memory cell and memory devices configured to perform the same |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110895957A (zh) * | 2018-09-13 | 2020-03-20 | 东芝存储器株式会社 | 半导体存储装置 |
CN112447232A (zh) * | 2019-08-28 | 2021-03-05 | 铠侠股份有限公司 | 半导体存储装置 |
CN112447232B (zh) * | 2019-08-28 | 2024-03-22 | 铠侠股份有限公司 | 半导体存储装置 |
WO2023151149A1 (zh) * | 2022-02-08 | 2023-08-17 | 长鑫存储技术有限公司 | 感应放大器电路、其控制方法以及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
TWI650758B (zh) | 2019-02-11 |
US20180315486A1 (en) | 2018-11-01 |
CN107086051B (zh) | 2020-11-06 |
US20200194088A1 (en) | 2020-06-18 |
US10796779B2 (en) | 2020-10-06 |
JP6490018B2 (ja) | 2019-03-27 |
TW202115735A (zh) | 2021-04-16 |
US20170236595A1 (en) | 2017-08-17 |
TWI768562B (zh) | 2022-06-21 |
US10614900B2 (en) | 2020-04-07 |
TW201812785A (zh) | 2018-04-01 |
CN112233713A (zh) | 2021-01-15 |
JP2017142874A (ja) | 2017-08-17 |
US10319450B2 (en) | 2019-06-11 |
TWI607449B (zh) | 2017-12-01 |
TW201729211A (zh) | 2017-08-16 |
US10037813B2 (en) | 2018-07-31 |
US20190267108A1 (en) | 2019-08-29 |
TWI714901B (zh) | 2021-01-01 |
TW201907407A (zh) | 2019-02-16 |
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Effective date of registration: 20170810 Address after: Tokyo, Japan Applicant after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Applicant before: Toshiba Corp. |
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Address after: Tokyo Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo Patentee before: Pangea Co.,Ltd. Address after: Tokyo Patentee after: Kaixia Co.,Ltd. Address before: Tokyo Patentee before: TOSHIBA MEMORY Corp. |
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Effective date of registration: 20220209 Address after: Tokyo Patentee after: Pangea Co.,Ltd. Address before: Tokyo Patentee before: TOSHIBA MEMORY Corp. |
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