CN107039772A - 用于无线充电系统的天线 - Google Patents

用于无线充电系统的天线 Download PDF

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CN107039772A
CN107039772A CN201610971898.6A CN201610971898A CN107039772A CN 107039772 A CN107039772 A CN 107039772A CN 201610971898 A CN201610971898 A CN 201610971898A CN 107039772 A CN107039772 A CN 107039772A
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哈利·孔德帕那构斯
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Energous Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
    • H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J50/00—Circuit arrangements or systems for wireless supply or distribution of electric power
    • H02J50/20—Circuit arrangements or systems for wireless supply or distribution of electric power using microwaves or radio frequency waves
    • H02J50/23—Circuit arrangements or systems for wireless supply or distribution of electric power using microwaves or radio frequency waves characterised by the type of transmitting antennas, e.g. directional array antennas or Yagi antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/364—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith using a particular conducting material, e.g. superconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
    • H01Q17/007—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems with means for controlling the absorption
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J50/00—Circuit arrangements or systems for wireless supply or distribution of electric power
    • H02J50/005—Mechanical details of housing or structure aiming to accommodate the power transfer means, e.g. mechanical integration of coils, antennas or transducers into emitting or receiving devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/0042—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries characterised by the mechanical construction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
    • H01Q15/006—Selective devices having photonic band gap materials or materials of which the material properties are frequency dependent, e.g. perforated substrates, high-impedance surfaces
    • H01Q15/008—Selective devices having photonic band gap materials or materials of which the material properties are frequency dependent, e.g. perforated substrates, high-impedance surfaces said selective devices having Sievenpipers' mushroom elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/06—Arrays of individually energised antenna units similarly polarised and spaced apart
    • H01Q21/061—Two dimensional planar arrays
    • H01Q21/065—Patch antenna array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant antennas
    • H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Waveguide Aerials (AREA)
  • Aerials With Secondary Devices (AREA)

Abstract

本发明公开了一种无线传输设备。无线传输设备的超材料系统包括超材料层。超材料层包括晶胞阵列，其中，每个晶胞均包括表面，所述表面具有带孔的金属贴片。孔被限定成使得该孔的边缘位于所述表面的边缘内并且间隔有一定的距离，以及孔内设置有元件。超材料系统还包括至少一个输入RF端口以及至少一组过孔，其中，所述至少一个RF端口被设置在超材料层下方的背衬层上，使得导电背衬层与超材料层之间不存在短路，且所述至少一组过孔将晶胞阵列与至少一个输入RF端口连接。

Description

用于无线充电系统的天线
技术领域
本申请大体上涉及无线充电系统，以及更具体地涉及被配置成向电力电子装置辐射无线电力信号的超材料晶胞。
背景技术
已经制造了多种无线充电系统用于将能量无线地传送至电子装置，在此，接收设备会使用所传送的能量并将其转化为电能。无线充电系统还能够按照有意义的距离传送能量。无线充电系统利用天线阵列来提供空间多样性、将无线传输波聚焦在目标位置处、进行测向以及增大容量。
新一代无线充电系统做出了将各种技术结合以实现高性能目标的多种尝试。然而，由于存在包括天线阵列的设计在内的大量实际设计因素，新一代无线充电系统可实现的性能仍然受限。由于新一代无线充电系统中存在严格的空间限制，因此将多个间距大的天线容纳在现代无线充电系统中就非常困难。通常，天线的维度是由对该天线而言所设计的工作频率决定的。理想天线是电磁波长的若干倍，从而使得天线可以支持驻波(standingwave)。天线通常无法满足这个约束，因为在新一代无线充电系统中的特定设计中，天线设计者要么要求天线小于特定波长，要么天线很简单从而没有被分配所需要的容积。当天线不具备理想维度时，天线将失去功效。通常，天线还被用于捕获电磁波上所编码的信息。然而，如果天线小于进入的电磁波长，那么捕获所述信息是低效的并且会损耗相当大的电力。为了满足这样的要求设计准则，不断地促使天线设计者为新一代无线充电系统寻找能够在其上建立天线系统的更好的材料。
近年来，天线设计者已经使用了多种超材料。超材料是一大类合成材料，这类合成材料已经被工程化成产生自然材料中未发现的介电常数值和磁导率值或其他物理特性，并且与天线系统需求保持一致。已经在理论上论证了：可以将通过将特定材料嵌入到通常为介电基底的某些主体基质(host media)介质而产生的材料进行裁剪以展现出所期望的特性。这些前景(promise)使得可通过重要的因素来使该天线微型化同时天线还能以可接受的效率工作。
在用于新一代无线充电系统的天线系统的背景下，已经将超材料作为基底或基顶用在现有天线上来增强现有天线的属性。在现有技术中，通常将超材料集成在天线的后面，要么与印刷天线一起被单片地集成在同一印刷电路板(PCB)上，要么作为独立结构设置成靠近天线。可代替地，可以将超材料集成到已定向天线以进一步增强其方向性和增益。将超材料集成到天线的益处在于其增强了天线的多种属性，诸如，其创建了一个或更多个定向波束。应当注意的是，某些超材料在保持非常薄的外形的同时还可以将全向天线转换成完全定向的天线。然而，由于同时存在天线层和超材料层，因此用于新一代无线充电系统的超材料天线系统无法实现最佳尺寸和性能。因此，在本领域中，存在具有如下性能的超材料天线系统的需求：能够为具有严格空间限制的现有无线充电系统提供最佳尺寸和性能。
发明内容
超材料是人工复合材料，该人工复合材料实现了超出了均匀材料限制的性能并且呈现出自然形成物中没有发现的属性。这类人工结构化材料通常是通过图案化或布置一种材料或多种材料以扩展所述材料的电磁属性范围来构造的。当电磁波进入材料时，该电磁波的电场和磁场与材料的原子和分子的电子或其他电荷相互作用。这些相互作用改变了电磁波的运动，从而改变了材料中的电磁波传播特性，例如，速度、波长、方向、阻抗、折射率等。类似地，在超材料中，电磁波与宏观地影响这些特性的适当设计的人工晶胞相互作用。在一实施例中，超材料可以包括形成在电介质基底之上或其中的晶胞阵列，并且被配置成向电力电子设备辐射无线电力信号。
在一实施例中，无线传输设备包括超材料晶胞。超材料晶胞可以包括具有带孔的金属贴片的表面。孔被限定为使得孔的边缘位于表面的边缘内并且间隔有一定距离。孔内设置有天线元件。
在另一实施例中，提供了一种用于形成晶胞的方法。该方法包括使用超材料基底形成超材料层。可以在超材料层上创建表面，并且可以在超材料层的表面中创建带孔的金属贴片。可以在孔中设置天线元件以形成晶胞。
在另一实施例中，无线传输设备的超材料系统(或者超材料板)包括超材料层。超材料层可以包括超材料晶胞阵列，其中，每个超材料晶胞均可以包括带孔的表面。孔被限定为使得孔的边缘位于表面的边缘内并且间隔有一定距离。将天线元件设置在孔内。超材料系统还可以包括设置在位于超材料层下方的背衬层上的至少一个输入RF端口，使得导电背衬层和超材料层之间不存在短路。至少一组通孔可以将超材料晶胞阵列与输入RF端口连接。
在另一实施例中，提供了一种用于形成超材料系统的方法。该方法包括形成背衬层。超材料层可以由超材料基底形成。可以在背衬层上方形成超材料层。可以在超材料层中创建多个分区，其中每个分区限定多个晶胞中的一个晶胞的一部分。该方法还包括在每个分区中创建孔，其中，孔被限定为使得孔的边缘位于其中以一定间隔距离创建有孔的分区的边缘内。可以在所述多个分区的每个分区中的孔中设置元件。可以在背衬层上形成至少一个输入RF端口，使得背衬层与超材料层之间没有短路。可以通过至少一组过孔将晶胞与输入RF端口连接。
附图说明
本专利或申请文件包含至少一个以彩色作成的附图。经过请求并支付了必要费用之后，专利局会提供带有彩色附图的该专利或专利申请公开的副本。
附图构成本说明书的一部分并且示出了本发明的实施例，所述附图与所述说明书一起用于对本发明进行说明。
图1A示出了根据示例性实施例的具有非接触式电容耦合机制的超材料板的结构的等距视图。
图1B示出了用于描绘根据示例性实施例的、图1A中的具有非接触式电容耦合机制的超材料板的回波损耗(return loss)的图形。
图1C示出了根据示例性实施例的、图1A中的具有非接触式电容耦合机制的超材料板的辐射增益模式的等距视图。
图1D示出了根据示例性实施例的、图1A中的具有非接触式电容耦合机制的超材料板的辐射增益模式在线性标度下的剖视图。
图1E示出了根据示例性实施例的、图1C中的具有非接触式电容耦合机制的超材料板的辐射增益模式在主Y-Z平面上的极化图。
图1F示出了根据示例性实施例的、图1A中的具有非接触式电容耦合机制的超材料板的在工作频率下超材料晶胞层上的表面电流密度分布的幅值。
图1G示出了根据示例性实施例的、图1A中的具有非接触式电容耦合机制的超材料板的在工作频率下背衬导体层上的表面电流密度分布的幅值。
图2示出了根据示例性实施例的具有共面耦合机制的超材料板的结构的等距视图。
图3A示出了根据示例性实施例的具有直接馈电激励机制的超材料板的结构的等距视图。
图3B示出了用于描绘根据示例性实施例的、图3A中的具有直接馈电激励机制的超材料板的回波损耗的图形。
图3C示出了根据示例性实施例的、图3A中的具有直接馈电激励机制的超材料板的辐射增益模式的等距视图。
图3D示出了根据示例性实施例的、图3A中的具有直接馈电激励机制的超材料板的在工作频率下超材料晶胞层上的表面电流密度分布的幅值。
图3E示出了根据示例性实施例的具有直接馈电激励机制的超材料板的结构的等距视图。
图3F示出了用于描绘根据示例性实施例的、图3E中的具有直接馈电激励机制的超材料板的回波损耗的图形。
图4示出了根据示例性实施例的具有非接触式电容耦合机制、共面耦合机制以及直接馈电激励机制的超材料板的结构的放大截面图。
图5A示出了根据示例性实施例的具有直接馈电激励机制的超材料板的结构的等距视图。
图5B示出了用于描绘根据示例性实施例的、图5A中的具有直接馈电激励机制的超材料板的回波损耗的图形。
图5C示出了根据示例性实施例的、图5A中的具有直接馈电激励机制的超材料板的辐射增益模式的等距视图。
图5D示出了根据示例性实施例的具有直接馈电激励机制的超材料板的结构的等距视图。
图5E示出了用于描绘根据示例性实施例的、图5D中的具有直接馈电激励机制的超材料板的回波损耗的图形。
图5F示出了根据示例性实施例的、图5D中的具有直接馈电激励机制的超材料板的辐射增益模式的等距视图。
图6A示出了根据示例性实施例的用作可佩戴天线的超材料晶胞的配置。
图6B示出了根据示例性实施例的用作可佩戴天线的超材料晶胞的放大截面图。
图6C示出了用于描绘根据示例性实施例的、图6A中的用作可佩戴天线的超材料晶胞的回波损耗的图形。
图6D示出了根据示例性实施例的、图6A中的用作可佩戴天线的超材料晶胞的辐射增益模式的等距视图。
图7A示出了根据示例性实施例的被配置成可佩戴天线的超材料晶胞的结构。图7B示出了根据示例性实施例的被配置成可佩戴天线的超材料晶胞的结构的放大截面图。
图8A示出了根据示例性实施例的被配置成天线阵列的超材料板的结构的等距视图。
图8B示出了用于描绘根据示例性实施例的、图8A中的被配置成天线阵列的超材料板的回波损耗的图形。
图8C示出了根据示例性实施例的、图8A中的被配置成天线阵列的超材料板的辐射增益模式的等距视图。
图9A示出了根据示例性实施例的包括两个正交子阵列的超材料板的等距视图。
图9B示出了根据示例性实施例的、图9A中的包括两个正交子阵列的超材料板的辐射增益模式的平面视图。
图9C示出了根据示例性实施例的、图9A中的包括两个正交子阵列的超材料板的辐射增益模式的平面视图。
图9D示出了根据示例性实施例的、图9A中的包括两个正交子阵列的超材料板的辐射增益模式的平面视图。
图9E示出了根据示例性实施例的、图9A中的包括两个正交子阵列的超材料板的辐射增益模式的等距视图。
图10示出了根据示例性实施例的用于形成超材料板的方法。
具体实施方式
本文参考在此作为本申请的一部分的附图中所描绘的实施例对本发明进行详细地描述。在不偏离于本发明的主旨或范围的情况下，可以使用其他实施例和/或做出其他变更。详细说明书中所描述的示例性实施例并非意在对本文所提出的主题进行限制。
在一实施例中，以任意材料制作的结构对电磁波的响应可以通过如下全部参数来描述，诸如，材料的介电常数和磁导率，其中，结构的维度要远小于电磁波的波长。材料的每个点处的介电常数和磁导率可能相同或不同，使得材料的整体介电常数和磁导率在某种程度上规律地分布。规律分布的磁导率和介电常数可以使得材料对于电磁波呈现出宏观响应，例如，聚集电磁波、分散电磁波等等。这样的具有规律分布的磁导率和介电常数的材料称之为超材料。换言之，超材料是一大类合成材料，该合成材料被工程化为产生符合系统需求的介电常数和磁导率特征。通过将通常为周期结构的特定结构嵌入到通常为介电基底的某些主体基质，所产生的材料被裁剪成展现出所期望的特性。这些材料能够使得通过一个重要因数来使得该天线微型化同时天线还能以可接受的效率工作。超材料还可以将全向辐射天线转化为定向辐射天线。
在一实施例中，本发明的超材料不需要额外的天线层来使得超材料进行辐射。超材料自身发生辐射，并且同时，超材料保持了传统天线类型的超材料的属性。换言之，超材料作为非常薄的反射器，同时，超材料不需要天线进行辐射，因为超材料自身就能发生辐射。
在一实施例中，本发明的超材料的作用等同于人工磁导体。超材料被配置成非常薄的反射器，因此，很容易将超材料集成到外形非常薄的产品中，诸如，可佩带手环。
在一实施例中，提供了包括至少两个金属层和一个薄基底的超材料系统(还称之为超材料板)。相比于现有技术的实现方式，本发明的超材料系统的结构不提供天线布置层，由于现有技术中存在用于布置天线的附加天线层，因此现有技术需要至少三层金属层。此外，因为缺乏附加天线层，本发明的超材料系统的尺寸要比现有技术实现方式更薄，通常以规定的相对于普通超材料而言不可忽略的差异大大地降低了包含超材料系统的整体系统的厚度。因此，由于不存在任何天线层使得本发明的超材料系统具有非常薄的轮廓，并且适合于以低成本进行高密度集成。
在一实施例中，提供了一种由几个子波长尺寸的“人工原子”或辐射超材料晶胞组成的超材料系统。该超材料系统是通过同时对所有的辐射超材料晶胞进行电磁激励的方式来工作的。超材料系统还具有多个自由度，这些自由度可以转化成使用传统单天线无法获得的波束形成可能性。在一示例中，超材料系统的一些区域包含辐射超材料晶胞，这些区域与同一超材料系统的其他区域相比具有不同的设计和辐射属性。辐射超材料晶胞有利于创建波束形成和/或光束控制而无需引入任何移相网络。
在一实施例中，提供了一种由几个辐射超材料晶胞组成的超材料系统。通过恰当地设计辐射超材料晶胞，超材料系统可以获得线性、圆形或椭圆极化。通过由辐射超材料晶胞的区域组成的超材料系统，可以获得线性、圆形或椭圆极化属性，其中，每个辐射超材料晶胞相对于其他超材料晶胞具有不同的设计。换言之，由于辐射超材料晶胞自身能够进行辐射，因此恰当地设计辐射超材料晶胞可以获得各种不同的功能，诸如，线型、圆形或椭圆形极化。
在一实施例中，提供了一种由多个辐射超材料晶胞组成的超材料系统。这些辐射超材料晶胞可以通过由集成二极管、RF微机电(MEM)设备或其他装置实现的开关进行电气互连，从而形成更大的辐射域或不同超材料的“超级晶胞”，更大的辐射域或不同超材料的“超级晶胞”能够扫描所选定的工作频率，在该工作频率下的电磁辐射是所期望的。
在一实施例中，提供了由一个晶胞阵列构成的超材料系统。该晶胞阵列自身能够进行辐射并且具有工程化的超材料。在一种实现方式中，可以通过将晶胞阵列中的相邻晶胞连接来构造开关阵列。换言之，超材料系统由晶胞的晶格组成，并且可以通过二极管将相邻的晶胞的晶格连接来制造开关的晶格。开关的晶格可以叠加在晶胞的晶格上，并且由于开关将相邻的晶胞电气连接，因此可以存在超材料具有两种类型的晶胞的结构，一种类型的晶胞没有被连接，而另一种类型的晶胞是每对晶胞都被连接。在后一种情况下，电气尺寸可以根据开关是断开还是闭合而发生变化。在该结构中，可以根据开关是否与相邻的晶胞连接来改变频率。这也称为智能辐射超材料，其中频率调谐是通过开关的连接性来设置的。
在一实施例中，提供了一种由多个辐射超材料晶胞组成的超材料系统。超材料晶胞尺寸非常小，由此产生的超材料天线占据了小形状因数，并且理想地适合于遵循可佩戴和其他适形应用的弯曲形状。换言之，形状因数与超材料晶胞的尺寸成比例。由于更小的尺寸，超材料晶胞可以被设置在柔性/可佩戴基底上以实现可佩戴天线或具有可弯曲几何形状的天线。
在一实施例中，提供了一种由几个辐射超材料晶胞组成的超材料体系统。超材料晶胞尺寸非常小，由此其具有较小的形状因数，并且由于小形状因数，辐射超材料晶胞可以被设置成沿着正交方向紧密间隔，从而形成能够以正交线性极化方式同时发送或接收电磁波的双线性极化天线系统。以正交线性极化方式来同时进行电磁波的发送和接收可以在诸如弯曲的可佩带平台(例如，可佩戴手环)之类的非常小的区域内实现。
在一实施例中，提供了一种由多个辐射超材料晶胞组成的超材料系统。在接收模式中的辐射超材料晶胞操作为均匀材料，其以高吸收效率吸收电磁辐射。辐射超材料晶胞还可以在宽范围的频率上(包括微波频谱)工作。辐射超材料晶胞具有非常高吸收效率(90％或更高)。在另一实施例中，可以通过将局部化射频(RF)端口插入任意超材料晶胞来对辐射超材料晶胞进行分接。然后，该电力特定地指向这些RF端口。因此，辐射超材料晶胞用作具有接收所吸收能量的多个RF端口的密集天线阵列。这种超材料系统对于非常小的接收器是理想的，其中，所接收的电力可以同时分发到多个信道。可以实现高密度的RF端口，其中，每个这样的RF端口分接相邻的辐射超材料晶胞。只要采用额外的去耦技术，就可以实现甚至更高密度的RF端口，一些RF端口分接相同的辐射超材料晶胞。此外，这些多个密集设置的RF端口可以接受相位控制，从而产生电子调制RF模式。
现在将参考附图中所示的示意性实施例，并且这里将使用特定语言来描述。然而，应当理解，因此不意图限制本发明的范围。对于相关领域的技术人员以及拥有本公开内容的本领域技术人员将想到的本文所示的本发明特征的改变和进一步的修改，以及本文所示的本发明的原理的其他应用被认为在发明的范围内。图1A示出了根据示例性实施例的具有非接触式电容耦合机制的超材料板100的结构的等距视图。在此，所示出的超材料板100是通过标准印刷电路板(PCB)技术利用三层金属层来实现的。这三层层金属层可以包括导电背衬层102、超材料层104以及耦合层106。此外，导电背衬层102与超材料层104之间设置有介电层108。
在超材料板100的制造过程中，将导电背衬层102设置在超材料板100的结构的底部。可以将超材料层104沉积在导电背衬层102上方，然后可以将超材料层蚀刻以创建超材料晶胞104a阵列。在下文中，术语“晶胞”和“超材料晶胞”可以互换使用。在一实施例中，导电背衬层102与超材料层104之间的间距使得导电背衬层102与超材料层104之间不存在短路，从而使得超材料晶胞104a能够进行辐射。可以在超材料层104下方、导电背衬层102上方沉积介电层108或者通常为二氧化硅的绝缘材料。
超材料层104包括晶胞104a阵列。在示意性图示中，超材料板100的超材料层104包括以4乘4(4×4)排列的16个辐射超材料晶胞104a。每个超材料晶胞104a均可以包括表面。在一实施例中，该表面可以是大体上平坦的表面。在另一实施例中，该表面可以既不是平坦表面也不是大体上平坦的表面。超材料晶胞104a阵列中的每个超材料晶胞的大体平坦的表面可以是方形表面，该方形表面包括方形金属贴片104b，该方形金属贴片内刻划(inscribe)有孔104c。方形金属贴片104b并不完全填充超材料晶胞的表面，而是略小于超材料晶胞。孔104c被限定成使得该孔104c的边缘位于方形金属贴片104b的边缘内并且间隔有一定距离。在一个示例中，孔104c可以是圆形孔。可以将元件104d设置在孔104c内以形成圆形槽(slot)。在另一示例中，孔可以是由圆形孔104c以及设置在该圆形孔104c内的元件104d形成的狭窄圆形槽。在所示实施例中，因为孔104c的形状为圆形，所以作为圆形金属盘的元件104d被设置到孔104c内形成了圆形槽。本领域技术人员应当理解的是，孔104c的形状并非限定于圆形，并且，不偏离于本公开实施例的范围的情况下，孔104c可以是任意其他合适的形状。此外，由超材料晶胞104a组成的阵列包括方形金属贴片，因为超材料晶胞的表面略大于其中刻划的方形金属贴片104b的表面，因此这些金属贴片彼此不接触而由狭窄直槽隔开。此外，存在将圆形元件104d与方形金属贴片104b的边缘隔开的细槽。在一实施例中，超材料晶胞104a的阵列的一个子集可以具有相同的形状和尺寸，而超材料晶胞104a的阵列的另一子集可以具有其他形状和尺寸。
在一实施例中，一个超材料晶胞104a其自身无法进行高效地辐射并且也无法与所需的阻抗值进行匹配。换言之，一个超材料晶胞104a不具备用作标准天线的性能。超材料晶胞104a的阵列或集合一起用作天线。因此，超材料板100可以包括16个晶胞104a。然而，应当注意的是，在不偏离于所公开的实施例的情况下，其他实施例中超材料板100可以包括任意数量的晶胞104a。
在另一实施例中，超材料层104可以包括形成于介电基底之上或内部的晶胞104a的阵列。在一些实施例中，超材料层104可以包括晶胞104a的一堆二维阵列，其中，晶胞104a的每个二维阵列是形成在各自的介电基板之上或内部。在该实施方式中，通过堆积晶胞104a来构造磁导率增强超材料，并且磁导率增强超材料可以借助于其结构来存储磁能。在本发明的实施例中，晶胞104a由圆形元件104d和方形金属贴片104b组成，其中，圆形元件104d可以嵌入到介电材料中。当磁场法向地穿过圆形元件104d的平面并且环路中感应出电流时，晶胞104a中会创建磁能存储。
介电层108可以被掩模并刻蚀以打开公知为过孔的狭窄侧面开口110。每个过孔110作为开口分别穿过介电层108延伸至最上面的耦合层106的一部分。在一实施例中，存在过孔110的目的是为了在超材料板100的不同金属层之间提供电气路径。过孔110可以从超材料板100的表面行进并且穿过超材料板100的每一层。在另一实施例中，过孔110可以从超材料板100的一层或超材料板的表面行进并且穿过超材料板100的其它层，然而却在未行进穿过这些层之一便停止。在超材料板100的第一表面，过孔110可以终止于耦接至集成电路的连接焊点。超材料板100的相对面被耦接至PCB。如上面所讨论的，某些过孔110可以完全地穿过超材料100的整个核心。其他过孔110可以是独立的过孔110，这些过孔仅穿过超材料板100的一部分。所利用的特定分层和过孔110配置是一种涉及与特定超材料板100所起到的作用有关的几个因素的设计选择的问题。为了形成上述具有过孔110的超材料板100，一旦确定出穿过各层的过孔110的模式，可以通过机械钻孔、冲压或者蚀刻方式形成穿过各层的这些特定过孔110。可以利用用于在各层之间提供电气路径的可替代技术。
在所示出的图示中，过孔110从最上面的耦合层106延伸至输入RF端口112。这些RF端口113可以位于导电背衬层102之上或之后。RF端口112可以包括具有任意形状并且由塑料、金属或任意其他便利材料制成的外壳。输入RF端口112可以被配置成使得两个或更多个子模块能够可拆卸地位于外壳内或附接至外壳。即，子模块被可拆卸地电气耦接，并且可拆卸地插入到外壳内。在可替代实施例中，子模块可拆卸地附接至外壳的外部。输入RF端口112并不限于两个子模块，并且可以被配置成容纳有3个、4个或甚至更多个这种子模块。这些子模块可以包括经由RF能量进行通信的多种电气元件。通常，这些子模块能够实现这些部件的许多功能。
在另一实施例中，介电层108上方可以沉积有另一层金属。所沉积的金属填充过孔110，形成将所露出的底层金属结合在过孔的底部的金属接触结构，并且使得接触点穿过导电背衬层102与最上面的耦合层106之间的层。过孔110的几何图形以及现在填充过孔110的接触结构通常是圆形的，然而，过孔110还可以是诸如沟槽形状的其他形状。过孔110可以被设置成使得填充过孔110的金属结构提供超材料板100的两个独立的金属层之间的接触。
在一实施例中，非接触式电容耦合激励机制被用于激励超材料板100的结构。非接触式电容耦合激励机制所利用的一些部件被设置在超材料层104的上方并且位于超材料板100的中央以激励超材料板100的结构。这些部件至少包括位于耦合层106上的多个衬垫114。多个衬垫114被用于激励超材料板100的超材料晶胞。多个衬底114通过过孔110进行连接，过孔110穿过超材料板100的超材料层104向上到达超材料板100的导电背衬层106。在本实施例中，在与将RF电源从输入RF端口112耦接至超材料层104的电容结构没有直接接触的情况下，实现了对超材料层104的超材料晶胞的激励。此外，位于超材料层104上方并且穿过过孔110到达超材料板100的结构后部的多个(方形)衬垫114激励作为电容器的超材料晶胞，因此，这样的耦合被称为电容耦合。非接触式电容耦合激励机制使得三层金属层的超材料板100有效。在本文进一步描述的可替代实施例中，超材料板100的激励可以利用少于或多余三层金属层。在一实施例中，两个过孔110连接至RF端口112，从而具有正极性和负极性。负电位处的一个过孔110被配置成激励超材料晶胞104a的一半，而两个过孔110中位于正电位处的的另一个过孔被配置成激励剩余一半超材料晶胞104a。在非接触式电容耦合机制中，单个过孔110与相应的衬垫114同时对超材料板100的相邻超材料晶胞进行激励，因为相应的衬垫114尺寸有限并且对应的衬垫114等同地与两个相邻超材料晶胞耦接。
在一个示意性实施例中，超材料晶胞104a是包括孔的方形金属104b以及被设置在孔104c内的金属元件104d周围的方形表面。金属元件104d是直径小于孔104c的直径的圆形金属盘。孔104c的尺寸与工作频率成反比。如果孔104c的尺寸减小，被设置在孔104c内部的金属元件104d的尺寸也减小，则工作频率增大。如果孔104c的尺寸增大，被设置在孔104c内部的金属元件104d的尺寸也增大，则超材料晶胞104a的工作频率将减小。孔104c可以是圆形。在一个可替代实施例中，孔104c可以是椭圆形。可以利用可替代形状。
在一个示意性实施例中，超材料板100的辐射结构是线性极化，以及具有传送模式和接收模式。在传送模式/配置下，超材料板100的辐射结构发射辐射，其中，电场具有沿着单一直线的特定方向。在接收模式/配置中，超材料板100的辐射结构接收辐射。
图1B示出了用于描绘根据示例性实施例的、图1A中的具有非接触式电容耦合机制的超材料板100的回波损耗的图形。具有非接触式电感耦合的超材料板100的回波损耗(反射功率)是以dB来度量的。具有非接触式电感耦合的超材料板100在中心频率6GHz下发生谐振。在此，与50欧姆的RF端口的进行阻抗匹配是在低于-25dB处。阻抗匹配表示具有非接触式电容耦合机制的超材料板100与标准RF端口相匹配，该标准RF端口的阻抗通常为50欧姆。-10dB级别下的阻抗匹配带宽为350MHz或者是超材料板100的中心频率的6％。阻抗匹配限定了具有非接触式电容耦合机制的超材料板100的结构的工作频带。在一实施例中，可以将具有非接触式电容耦合机制的超材料板100的维度选择成使得具有非接触式电容耦合机制的超材料板100被调谐至大约500GHz的标准工作频率。在另一实施例中，在不偏离于本公开实施例的范围的情况下，通过修改所提出的形状也是可以实现与其他RF端口值的阻抗匹配。
图1C示出了根据示例性实施例的、图1A中的具有非接触式电容耦合机制的超材料板100的单位为dB的辐射增益模式的等距视图。如图1C所示出的，具有非接触式电容耦合机制的超材料板100具有单个具有能量的定向电磁能波束，该定向电磁能波束向上/向前(即沿着z轴)辐射。该单个定向电磁波束是通过对超材料板100的整个16个超材料晶胞104a进行激励而产生的。
图1D示出了根据示例性实施例的、图1A中的具有非接触式电容耦合机制的超材料板100的辐射增益模式在线性标度下的极化图。如图1D所示出的，具有非接触式电容耦合机制的超材料板100具有单个具有能量的定向电磁能波束，该定向电磁能波束直接朝向侧面，在超材料板100后面的辐射忽略不计。该单个定向电磁波束是通过对超材料板100的整个16个超材料晶胞104a进行激励而产生的。
图1E示出了根据示例性实施例的、图1C中的具有非接触式电容耦合机制的超材料板100的单位为dB的辐射增益模式在主Y-Z平面上的极化图。具有非接触式电容耦合机制的超材料板100所发射的电磁辐射是线性极化的，交叉极化级别比共极化辐射低40dB。在一个实施例中，超材料板100的背侧辐射被抑制，而前后增益比为大约17dB。
图1F示出了根据示例性实施例的、图1A中的具有非接触式电容耦合机制的超材料板100的在工作频率下超材料晶胞层上的表面电流密度分布的幅值。图1F示出了当超材料板100的超材料晶胞104a发出辐射时，在工作频带上具有非接触式电容耦合机制的超材料板100的辐射超材料晶胞上所分布的表面电流密度的幅值。在一个实施例中，根据非接触式电容耦合机制对超材料板100的多个超材料晶胞104a进行了激励，于是，超材料板100的每个超材料晶胞104a的方形贴片边缘和圆形槽边缘上会产生强电流。这导致超材料板100的多个超材料晶胞104a同时产生电磁辐射，从而使得超材料板100产生高辐射增益。在另一实施例中，由于超材料板100的每个超材料晶胞104a的方形贴片边缘和圆形槽边缘上都产生了强电流，根据非接触式电容耦合机制对超材料板100的所有超材料晶胞104a进行了激励，在该实施例中，这导致超材料板100的所有超材料晶胞104a同时产生电磁辐射，从而使得超材料板100产生高辐射增益。可以设想，一个可替代实施例可以主动或被动将多个超材料晶胞104a但不是所有的超材料晶胞104a结合以进行电磁辐射。在一个实施例中，尽管使用非接触式耦合机制将超材料板100的超材料晶胞104a的激励定位于超材料板100的中心，然而，如图所示，电流在超材料板100的所有超材料晶胞104a上扩散以进行辐射。在一个可替代实施例中，使用非接触式耦合机制可以将超材料板100的超材料晶胞104a的激励定位于超材料板100的任意位置，使得电流在超材料板100的多个超材料晶胞104a上扩散以进行辐射。
在一实施例中，为了进行辐射，使用非接触式电容耦合机制的超材料板100导致多于一个的超材料晶胞104a被激励以进行辐射。在这种情况下，超材料板100的多个超材料晶胞104a具有作为标准天线的性能。在一个可替代实施例中，为了进行辐射，使用非接触式电容耦合机制的超材料板100可以具有可以被激励以进行辐射的单个超材料晶胞104a。在这种情况下，单个超材料晶胞104a具有作为标准天线的性能。
图1G示出了根据示例性实施例的、图1A中的具有非接触式电容耦合机制的超材料板100的在工作频率下背衬导体层上102的表面电流密度分布的幅值。如图1G所示，电流集中在超材料板100的导电背衬层102的中心处，并且从而产生聚焦效应，该聚焦效应引导超材料板100的超材料晶胞104a所辐射的电磁能量沿着向上方向，即，沿着z轴。
图2示出了根据示例性实施例的具有共面耦合机制的超材料板200的结构的等距视图。在该实施例中，共面耦合机制被用于激励超材料板200的超材料晶胞阵列。共面耦合机制是非接触式耦合机制，其中，可以使用少量金属层，从而降低了制造成本。
超材料板200可以通过标准印刷电路板(PCB)技术利用两层金属层实现。这两层金属层包括导电背衬层202和超材料层204。此外，导电背衬层202与超材料层204之间设置有介电层206。在超材料板200的制造过程中，导电背衬层202被设置在超材料板200的结构的底部。超材料层204可以被沉积在导电背衬层202上方，然后可以被蚀刻以创建超材料晶胞204a阵列。在一实施例中，导电背衬层202与超材料层204之间的间距使得导电背衬层202与超材料层204之间不存在短路，从而使得超材料晶胞204a能够进行辐射。可以在超材料层204下方、导电背衬层202上方沉积介电层206或者通常为二氧化硅的绝缘材料。
超材料层204包括晶胞204a阵列。在示意性图示中，超材料板100的超材料层204包括以4乘4(4×4)排列的16个辐射超材料晶胞204a。每个超材料晶胞204a均可以包括表面。在一实施例中，该表面可以是大体上平坦的表面。在另一实施例中，该表面可以既不是平坦表面也不是大体上平坦的表面。超材料晶胞204a阵列中的每个超材料晶胞的大体平坦的表面可以是方形表面，该方形表面包括方形金属贴片204b，该方形金属贴片内刻划(inscribe)有孔204c。方形金属贴片204b并不完全填充晶胞的表面，而是略小于晶胞。晶胞204a阵列中的每个晶胞的大体平坦的表面可以是带孔204c的方形金属贴片204b，孔204c被刻划在方形金属贴片204b内。孔204c被限定成使得该孔204c的边缘位于方形金属贴片204b的边缘内并且间隔有一定距离。在一个示例中，孔204c可以是圆形孔。孔204c内可以设置有元件204d以形成圆形槽。在所示实施例中，因为孔204c的形状为圆形，所以作为圆形金属盘的元件204d被设置到孔204c内形成了圆形槽。本领域技术人员应当理解的是，孔204c的形状并非限定于圆形，并且，不偏离于本公开实施例的范围的情况下，孔204c可以是任意其他合适的形状。此外，由超材料晶胞204a组成的阵列包括方形金属贴片204b，因为超材料晶胞的表面略大于其中刻划的方形金属贴片204b的表面，因此这些金属贴片204b彼此不接触而由狭窄直槽所隔开。在所示出的图示中，每个晶胞204a被附接至相邻晶胞204a，但是与这些晶胞相对应的所刻划的方形金属贴片204b被小尺寸槽分开。此外，存在将圆形元件204d与方形金属贴片204b的边缘隔开的细槽。在一实施例中，超材料晶胞204a的阵列的一个子集可以具有相同的形状和尺寸，而超材料晶胞204a的阵列的另一子集可以具有其他形状和尺寸。
介电层206被掩模并刻蚀以打开公知为过孔的狭窄侧面开口208。每个过孔208作为开口分别穿过介电层206延伸至最上层的一部分。存在过孔208的目的是在超材料板200的不同金属层之间提供电气路径。在所示出的图示中，过孔208从超材料层204延伸至输入RF端口210。这些RF端口210可以位于导电背衬层202之上或之后。过孔208的几何图形以及现在填充过孔208的接触结构通常是圆形的，然而，过孔208还可以是诸如沟槽形状的其他形状。过孔208可以被设置成使得填充过孔208的金属结构提供超材料板200的两个独立的金属层之间的接触。为了形成上述具有过孔208的超材料板200，一旦确定出穿过各层的过孔208的模式，可以通过机械钻孔、冲压或者蚀刻方式形成穿过各层的这些特定过孔208。可以利用用于在各层之间提供电气路径的可替代技术。在一实施例中，共面耦合机制的激励部件可以被设置在超材料板200的超材料晶胞204a的平面上以激励超材料板200的结构。在本实施例中，在与将RF电源从输入RF端口210耦接至超材料层204的电容结构没有直接接触的情况下，实现了对超材料层204的超材料晶胞204a的激励。RF端口210被设置在导电背衬层202上，其中RF端口210馈电衬底被设置在导电背衬层202中的小孔内。共面耦合激励机制利用的是两层金属层的超材料板200。
在一实施例中，两个过孔208连接至RF端口210，从而具有正极性和负极性。负电位处的一个过孔208被配置成激励超材料晶胞204a的一半，而两个过孔208中位于正电位处的的另一个过孔被配置成激励剩余一半超材料晶胞204a。在一个示意性实施例中，超材料晶胞204a是包括孔204c的方形金属204b以及被设置在孔204c内的金属元件204d周围的方形表面。孔204c的尺寸与工作频率成反比。如果孔204c的尺寸减小，被设置在孔204c内部的金属元件204d的尺寸也减小，则工作频率增大。如果孔204c的尺寸增大，被设置在孔204c内部的金属元件204d的尺寸也增大，则超材料晶胞204a的工作频率将减小。孔204c可以是圆形。在一个可替代实施例中，孔204c可以是椭圆形。还可以利用其它可替代形状。
超材料板200的辐射结构是线性极化的，并且具有传送模式且接收模式。在传送模式/配置中，超材料板200的辐射结构发射辐射，其中，电场具有沿着单一直线的特定方向。在接收模式/配置中，超材料板200的辐射结构接收辐射。在一实施例中，具有共面耦合机制的超材料板200的辐射和阻抗匹配属性等同于图1A超材料板100的结构的辐射和阻抗匹配属性。
图3A示出了根据示例性实施例的具有直接馈电激励机制的超材料板300的结构的等距视图。在该实施例中，所使用的激励机制是通过导电过孔进行的直接馈电机制。直接馈电激励机制可以使用两层金属层，从而降低制造成本。在直接馈电激励机制中，在电容耦合或共面耦合情况下均不会发生对超材料板300的超材料晶胞的激励，只有当过孔直接地连接至超材料晶胞的情况下才会发生对超材料板300的超材料晶胞的激励。
在此，超材料板300可以通过标准印刷电路板(PCB)技术利用两层金属层实现。这两层金属层可以包括导电背衬层302和超材料层304。此外，导电背衬层302与超材料层304之间可以设置有介电层306。在超材料板300的制造过程中，导电背衬层302被设置在超材料板300的结构的底部。超材料层304被沉积在导电背衬层302上方，然后可以被蚀刻以创建超材料晶胞304a阵列。在一实施例中，导电背衬层302与超材料层304之间的间距使得导电背衬层202与超材料层204之间不存在短路以便于使得超材料晶胞304a能够进行辐射。可以在超材料层304下方、导电背衬层302上方沉积介电层306或者通常为二氧化硅的绝缘材料。
超材料层304包括晶胞304a阵列。在示意性图示中，超材料板300的超材料层304包括以4乘4(4×4)排列的16个辐射超材料晶胞304a。在示意性图示中，每个超材料晶胞304a不互相附接，且存在小尺寸的槽来使这些超材料晶胞304a相互隔开。每个超材料晶胞304a均可以包括表面。在一实施例中，该表面可以是大体上平坦的表面。在另一实施例中，该表面可以既不是平坦表面也不是大体上平坦的表面。超材料晶胞304a阵列中的每个超材料晶胞的大体平坦表面可以是方形表面，该方形表面包括方形金属贴片304b，该方形金属贴片内刻划(inscribe)有孔304c。方形金属贴片304b并不完全填充晶胞的表面，而是略小于晶胞。超材料晶胞304a阵列中的每个超材料晶胞的大体平坦的表面可以是其中刻划有孔304c的方形金属贴片304b。孔304c被限定成使得该孔304c的边缘位于方形金属贴片304b的边缘内并且间隔有一定距离。在一个示例中，孔304c可以是圆形孔。孔304c内可以设置有元件304d以形成圆形槽。在所示实施例中，因为孔304c的形状为圆形，所以作为圆形金属盘的元件304d被设置到孔304c内形成了圆形槽。本领域技术人员应当理解的是，孔304c的形状并非限定于圆形，并且，不偏离于本公开实施例的范围的情况下，孔304c可以是任意其他合适的形状。此外，由超材料晶胞304a组成的阵列包括方形金属贴片304b，因为超材料晶胞的表面略大于其中刻划的方形金属贴片304b的表面，因此这些金属贴片304b彼此不接触而由狭窄直槽隔开。在所示出的图示中，每个晶胞304a被附接至相邻晶胞304a，但是与这些晶胞304a相对应的所刻的划方形金属贴片304b被小尺寸槽隔开。此外，存在将圆形元件304d与方形金属贴片304b的边缘隔开的细槽。在一实施例中，超材料晶胞304a的阵列的一个子集可以具有相同的形状和尺寸，而超材料晶胞304a的阵列的另一子集可以具有其他形状和尺寸。
介电层306可以被掩模并刻蚀以打开公知为过孔308的狭窄侧面开口。每个过孔208作为开口分别穿过介电层306延伸至最上层的一部分。存在过孔308的目的是在超材料板300的不同金属层之间提供电气路径。在所示出的图示中，过孔308从超材料层304延伸至输入RF端口310。这些RF端口310可以位于导电背衬层302之上或之后。过孔308的几何图形以及现在填充过孔308的接触结构通常是圆形的，然而，过孔308还可以是诸如沟槽形状的其他形状。过孔308可以被设置成使得填充过孔308的金属结构提供超材料板300的两个独立的金属层之间的接触。
在一实施例中，直接馈电机制的激励部件可以被设置在超材料板300的超材料晶胞304a的平面上以激励超材料板300。在本实施例中，超材料层304的超材料晶胞304a的激励是通过过孔308来实现的。在一实施例中，过孔308可以连接至RF端口310，从而具有正极性和负极性。负电位处的一个过孔308a被配置成激励超材料晶胞304a的一半，而两个过孔中位于正电位处的另一个过孔308b被配置成激励剩余一半的超材料晶胞304a。
在一个示意性实施例中，超材料晶胞304a可以是包括孔304c的方形金属304b以及被设置在孔304c内的金属元件304d周围的方形表面。孔304c的尺寸与工作频率成反比。如果孔304c的尺寸减小，被设置在孔304c内部的金属元件304d的尺寸也减小，则工作频率增大。如果孔304c的尺寸增大，被设置在孔304c内部的金属元件304d的尺寸也增大，则超材料晶胞304a的工作频率将减小。孔304c可以是圆形。在一个可替代实施例中，孔304c可以是椭圆形。可以利用其它可替代形状。
超材料板300的辐射结构是线性极化，并且具有传送模式且接收模式。在传送模式/配置，超材料板300的辐射结构发射辐射，其中，电场具有沿着单一直线的特定方向。在接收模式/配置中，超材料板200的辐射结构接收辐射。
图3B示出了用于描绘根据示例性实施例的、图3A中的具有直接馈电激励机制的超材料板300的回波损耗的图形。具有直接馈电激励机制的超材料板300的回波损耗(反射功率)是以dB来度量的。具有直接馈电激励机制的超材料板300在中心频率5.9GHz下发生谐振。在此，与50欧姆的RF端口310的进行阻抗匹配是在-25dB处。阻抗匹配表示具有直接馈电激励机制的超材料板300与标准RF端口310相匹配，该标准RF端口的阻抗通常为50欧姆。-10dB级别下的阻抗匹配带宽为350MHz或者是超材料板300的中心频率的6％。阻抗匹配限定了具有直接馈电激励机制的超材料板300的工作频带。
图3C示出了根据示例性实施例的、图3A中的具有直接馈电激励机制的超材料板300的辐射增益模式的等距视图。如图3C所示出的，具有直接馈电激励机制的超材料板300具有单个具有能量的定向电磁能波束，该定向电磁能波束向上/向前(即沿着z轴)辐射。该单个定向电磁波束是通过对超材料板300的整个16个超材料晶胞304a进行激励而产生的。
图3D示出了根据示例性实施例的、图3A中的具有直接馈电激励机制的超材料板300的在工作频率下超材料晶胞层302上的表面电流密度分布的幅值。图3D示出了当超材料板发出辐射时，具有直接馈电机制的超材料板300的辐射超材料晶胞304a上所分布的表面电流密度的幅值。在一实施例中，根据直接馈电激励机制对超材料板300的多个超材料晶胞304a进行了激励，于是，超材料板300的每个超材料晶胞304a的方形贴片边缘和圆形槽边缘上会产生强电流。这导致超材料板300的多个超材料晶胞304a同时产生电磁辐射，从而使得超材料板300产生高辐射增益。在另一实施例中，由于超材料板300的每个超材料晶胞304a的方形贴片边缘和圆形槽边缘上均产生了强电流，根据直接馈电激励机制对超材料板300的所有超材料晶胞304a进行了激励，在该实施例中，这导致超材料板300的所有超材料晶胞304a同时产生电磁辐射，从而使得超材料板300产生高辐射增益。
在一实施例中，尽管使用直接馈电耦合机制将超材料板300的超材料晶胞304a的激励定位于超材料板300的中心，然而，如图所示，电流在超材料板300的所有超材料晶胞304a上扩散以进行辐射。在一个可替代实施例中，可以将超材料板300的超材料晶胞304a的激励定位于超材料板300的任意位置，使得电流在超材料板300的多个超材料晶胞304a上扩散以进行辐射。
在一实施例中，为了进行辐射，使用直接馈电耦合机制的超材料板300可以利用多于一个的超材料晶胞304a来引起激励以进行辐射。在这种情况下，超材料板300的多个超材料晶胞304a具有作为标准天线的性能。在一个可替代实施例中，为了进行辐射，使用直接馈电耦合机制的超材料板300可以具有可以被激励以进行辐射的单个超材料晶胞304a。在这种情况下，单个超材料晶胞304a具有作为标准天线的性能。
图3E示出了根据示例性实施例的具有直接馈电激励机制的超材料板300a的结构的等距视图。除了超材料板300a的超材料晶胞304a的维度和尺寸不一样之外，图3E中的超材料板300a的结构类似于图3A中的超材料板300的结构。部件的维度和尺寸不同(诸如超材料板300a的超材料晶胞304a相比于超材料板300的超材料晶胞的维度和尺寸)有利于实现工作频率的缩放(scaling)。在本实施例中，超材料板300a比图3A中的超材料板300的每个超材料晶胞的圆形槽要狭窄。此外，超材料板300a的超材料晶胞304a的方形贴片之间的间距比图3A中的超材料板300的超材料晶胞的方形贴片之间的间距狭窄。在所示出的示例中，相比于图3A中的超材料板300的每个超材料晶胞上的圆形槽宽度0.15mm，超材料板300a的每个超材料晶胞304a的圆形槽的宽度为0.1mm。在所示出的示例中，图3A和图3E中所描述的实施例中的超材料板的总尺寸为20mm×20mm，然而，本领域普通技术人员应当理解的是，在不偏离于本公开实施例的范围的情况下，其他实施例中可以改变所述尺寸。
图3F示出了用于描绘根据示例性实施例的、图3E中的具有直接馈电激励机制的超材料板300a的回波损耗的图形。具有直接馈电激励机制的超材料板100的回波损耗(反射功率)是以dB来度量的。具有直接馈电激励机制的超材料板300a在中心频率5.8GHz下发生谐振。在不增大超材料板300a的整体结构的尺寸的情况下，中心频率相对于图3A所讨论的实施例而言会减小150-100MHz。与50欧姆的RF端口进行阻抗匹配是在-28dB处。阻抗匹配表示具有非接触式电容耦合机制的超材料板300a与标准RF端口相匹配，该标准RF端口的阻抗通常为50欧姆。-10dB级别下的阻抗匹配带宽为350MHz或者是超材料板300a的中心频率的6％。
图4示出了根据示例性实施例的具有非接触式电容耦合机制、共面耦合机制以及直接馈电激励机制的超材料板的结构的放大截面图。具有非接触式电容耦合机制的超材料板100、具有共面耦合机制的超材料板200以及具有直接馈电激励机制的超材料板300具有相同或大体上相同的物理特征、工作带宽以及性能。在另一实施例中，可以使用其他激励机制来激励超材料板进行辐射。在又一实施例中，可以使用具有非接触式电容耦合机制的超材料板100、具有共面耦合机制的超材料板200以及具有直接馈电激励机制的超材料板300的混合组合。在一实施例中，具有非接触式电容耦合机制的超材料板100使用三层金属层。具有共面耦合机制的超材料板200和具有直接馈电激励机制的超材料板300使用两层金属层。相比于具有共面耦合机制的超材料板200和具有直接馈电激励机制的超材料板300，具有非接触式电容耦合机制的超材料板100使用了额外的金属层。每层金属层都会增大制造成本，因此，具有共面耦合机制的超材料板200和具有直接馈电激励机制的超材料板300的制造成本要小于具有非接触式电容耦合机制的超材料板100的制造成本。因为具有直接馈电激励机制的超材料板300使用了两层金属层，对具有直接馈电激励机制的超材料板300的制造过程的控制更具鲁棒性，通过直接将过孔设置在实际的超材料晶胞上，而无需使用具有特定槽的任意圆形贴片来激励超材料板300的中央超材料晶胞。
在一实施例中，对于具有非接触式电容耦合机制的超材料板100、具有共面耦合机制的超材料板200以及具有直接馈电激励机制的超材料板300的超材料晶胞的尺寸的选择是基于所期望的工作频率进行的。超材料晶胞以及其相邻的超材料晶胞的尺寸决定了具有非接触式电容耦合机制的超材料板100、具有共面耦合机制的超材料板200以及具有直接馈电激励机制的超材料板300的工作频率。所述晶胞的频率被配置成在介于900MHz至100GHz之间的频带下操作。在一实施例中，对于具有非接触式电容耦合机制的超材料板100、具有共面耦合机制的超材料板200以及具有直接馈电激励机制的超材料板300的超材料晶胞的形状(诸如狭窄槽)对于频率调谐是非常主要的。在一实施例中，对于具有非接触式电容耦合机制的超材料板100、具有共面耦合机制的超材料板200以及具有直接馈电激励机制的超材料板300的每个超材料晶胞的直径大约为工作频率下波长的十分之一。
图5A示出了根据示例性实施例的具有直接馈电激励机制的超材料板500的结构的等距视图。如先前所描述的那样，超材料晶胞的数量影响超材料板的性能。在所示实施例中，超材料板500的尺寸等同于或大体上等同于图3A所示的超材料板300的尺寸，但是，相对于图3A所示的超材料板300具有16个超材料晶胞304a而言，所示实施例中的超材料板500具有四个超材料晶胞502。在该实施例中，所使用的激励机制是通过导电过孔进行的直接馈电激励机制。直接馈电激励机制使用两层金属层，从而降低制造成本。在直接馈电激励机制中，在电容耦合或共面耦合情况下均不会发生对超材料板500的超材料晶胞502的激励，只有当过孔504直接地连接至超材料晶胞502的情况下才会发生对超材料板500的超材料晶胞502的激励。图3A更详细地对直接馈电激励机制进行了说明。
图5B示出了用于描绘根据示例性实施例的、图5A中的具有直接馈电激励机制的超材料板500的回波损耗的图形。具有直接馈电激励机制的超材料板500的回波损耗(反射功率)是以dB来度量的。具有直接馈电激励机制的超材料板500在中心频率5.8GHz下发生谐振。这说明工作谐振频率是由超材料晶胞502的设计决定的而不是取决于超材料晶胞502的数量。与50欧姆RF端口的阻抗匹配在-30dB处或低于-30dB处，这小于先前所讨论的具有16个超材料晶胞的实施例中的阻抗匹配情况。阻抗匹配表示超材料板500与标准RF端口相匹配，该标准RF端口的阻抗通常为50欧姆。-10dB级别下的阻抗匹配带宽为240MHz或者是超材料板500的中心频率的4％。阻抗匹配限定了超材料板500的结构的工作频带。
图5C示出了根据示例性实施例的、图5A中的具有直接馈电激励机制的超材料板500的辐射增益模式的三维等距视图。如图5C所示出的，具有直接馈电激励机制的超材料板500具有单个具有能量的定向电磁能波束，该定向电磁能波束向上/向前辐射。该单个定向电磁波束是通过对超材料板500的整个四个超材料晶胞502进行激励而产生的。在所示实施例中，最大增益为5dBi，其比先前所讨论的具有16个超材料晶胞的实施例中的最大增益小1dB。由于本实施例中的导电背衬层的尺寸与先前实施例中的导电背衬层的尺寸相同，因此，和先前的实施例一样，本实施例中直接辐射也是由多个超材料晶胞502的集体激励引起的。
图5D示出了根据示例性实施例的具有直接馈电激励机制的超材料板500a的结构的等距视图。所示实施例具有超材料板500a，该超材料板500a等同于图4A所描述的超材料板500被配置，但是不是所有的晶面(facet)都是一样的，从而使得该结构具有紧凑的形状因数。
图5E示出了用于描绘根据示例性实施例的、图5D中的具有直接馈电激励机制的超材料板500a的回波损耗的图形。具有直接馈电激励机制的超材料板500a的回波损耗(反射功率)是以dB来度量的。超材料板500a在中心频率5.75GHz处发生谐振。在此，与50欧姆的RF端口进行阻抗匹配是-25dB处或低于-25dB处。阻抗匹配表示超材料板500a与标准RF端口相匹配，该标准RF端口的阻抗通常为50欧姆。-10dB级别下的阻抗匹配带宽为160MHz或者是超材料板500a的中心频率的3％。阻抗匹配限定了超材料板500a的结构的工作频带。
图5F示出了根据示例性实施例的、图5D中的具有直接馈电激励机制的超材料板500a的辐射增益模式的等距视图。如图5D所示出的，超材料板500a具有单个具有能量的定向电磁能波束，该定向电磁能波束向上/向前辐射。该单个定向电磁波束是通过对整个四个超材料晶胞502进行激励而产生的。在所示实施例中，最大增益为4.4dBi，比先前图5A所描述的实施例的最大增益小0.6dB，而比先前包括16个超材料晶胞的实施例的最大增益小1.6dB。由于本实施例中的导电背衬层的尺寸与先前实施例中的导电背衬层的尺寸相同，因此，和先前的实施例一样，本实施例中直接辐射也是由所有超材料晶胞502的集体激励引起的。
图6A示出了根据示例性实施例的用作可佩戴天线的超材料晶胞的配置，以及
图6B示出了图6A所描绘的结构的放大截面图。超材料晶胞602具有小尺寸，并且超材料晶胞602的尺寸小于任意手腕可佩带手环的曲面半径。这种尺寸的灵活性使得超材料晶胞602能够被蚀刻到手环的曲面上。在所示出的示例中，存在可佩戴手环604。该可佩戴手环604是由柔性塑料制成的并且是柔性隔离器。在一个示例中，塑料的厚度大约为1.5毫米，以及内径约为60毫米。超材料晶胞602的数量为四个，并且超材料晶胞602以线性阵列配置进行设置。在所示出的示例中，这四个超材料晶胞602中的每个的尺寸约为6毫米，然而，应当注意的是，在不偏离于本公开实施例的情况下，其他实施例中超材料晶胞602可以具有不同的尺寸。
在所示实施例中，用于激励超材料晶胞602的激励机制是直接馈电激励机制。应当理解的是，在不偏离于本公开实施例的情况下，在本发明的其他实施例中，可以使用任意其他激励机制来激励超材料晶胞602。在直接馈电激励机制中，一组通孔可以直接地激励超材料晶胞602。在所示实施例中，仅存在单行超材料晶胞602，因此，可以不使用两组通孔，而是可以使用单组通孔来激励单行超材料晶胞602。在单组通孔中，一个通孔606a被配置成具有正极性接触，以及另一个通孔606b被配置成具有负极性接触。正极性通孔606a馈电和/或激励一行超材料晶胞602的一半，以及负极性通孔606b馈电和/或激励一行超材料晶胞602的另一半。图3A更详细地对直接馈电激励机制进行了说明。
在所示出的示例中，每个超材料晶胞602的尺寸为6mm×6mm×1.5mm(手环厚度)或0.11×0.11×0.03λ3，其中，λ为操作频率下的波长。手环604的内径为60mm，其类似于标准尺寸手腕佩戴式手环的内径。出于不同的目的，可以使用可替代尺寸的手环604。
图6C示出了根据示例性实施例的、图6A中的用作可佩戴天线的超材料晶胞的回波损耗的图形。作为可佩戴天线的超材料晶胞602的回波损耗(反射功率)是以dB来度量的。作为可佩戴天线的超材料晶胞602在5.75GHz的中心频率处发生谐振，此时反射最小。工作谐振频率是由超材料晶胞602的设计决定的而不是取决于超材料晶胞602的数量。在此，与50欧姆的RF端口进行阻抗匹配是在-10dB处或低于-10dB处。阻抗匹配表示所述结构与标准RF端口相匹配，该标准RF端口的阻抗通常为50欧姆。-10dB级别下的阻抗匹配带宽为500MHz，这相当大并且限定了被配置为可佩戴天线的超材料晶胞602的结构的工作频带。除了上述其他优点以外，由于该较大自然带宽，本实施例对于可佩戴天线而言是理想的，原因在于具有调节阻抗的多余带宽是可取的，而该阻抗提供了来自于相邻结构(诸如手环604后面的对象(例如，人手))的调谐效应。图6D示出了根据示例性实施例的、图6A中的用作可佩戴天线的超材料晶胞的辐射增益模式的三维等距视图。如图6D所示出的，作为可佩戴天线的超材料晶胞602具有单个具有能量的定向电磁能波束，该定向电磁能波束向上/向前(即沿着z轴)辐射。该单个定向电磁能波束是通过激励多个超材料晶胞602的方式生成的，并且存在朝向手环604的内侧进入人的手腕的最小辐射。在所示实施例中，最大增益为3.7dBi，以及天线辐射效率为91％。
图7A示出了根据示例性实施例的被配置成可佩戴天线的超材料晶胞的结构，以及图7B示出了图7A所描绘的结构的放大截面图。图7A示出了作为可佩戴/柔性/保形天线的辐射超材料晶胞702的另一实施例。在该实施例中，手环704的尺寸可以与图6A的实施例中所描述的手环的尺寸相同，然而，存在附接在手环704的曲面上的三个小尺寸的超材料晶胞702。
在所示实施例中，三个超材料晶胞702是使用四个RF端口706进行探测的，使得其结构等同于密度极高的4天线阵列。在接收模式配置中，三个超材料晶胞702吸收指向不同的规定位置的RF能量。换言之，这三个超材料晶胞702操作为以高吸收效率吸收电磁辐射的统一材料。
通过将四个局部化RF端口706插入三个超材料晶胞702的方式对三个超材料晶胞702进行分接。然后该电力特定地指向局部化RF端口706。基于此，这种具有超材料晶胞702的结构作为具有接收所吸收的能量的多个RF端口706的密集天线阵列。这种结构对于物理上非常小的接收器而言是理想的，其中，需要将所接收的电力同时分发给多个信道。此外，多个密集设置的RF端口706可以接收相位控制，从而产生电子调制RF模式。
在一实施例中，这种具有超材料晶胞702的结构具有与接收器ASCI(未示出)相匹配的非常小的形状因数。ASCI位于该结构底部处的导电背衬层后中央，并且将被配置成将其输入端连接至四个RF端口706。由于可以在不同的位置处执行所述分接，因此ASCI要求每个RF端口具有较小的电力。为了获得该结构的带宽，需要该基底的间距以及厚度。在示意性实施例中，使用包括三个超材料晶胞702和四个RF端口706的结构可以获得2GHz带宽。
图8A示出了根据示例性实施例的被配置成可以在标准PCB板上制造的平坦天线阵列的超材料板800的结构的等距视图。在一实施例中，辐射超材料晶胞802被配置成天线阵列以接收和/或发送RF信号。超材料晶胞802被连接至4个RF端口，使得该结构等同于间隔相当近的四个天线。本实施例与图7A中的可佩戴配置等同，但是，适合于系统的平坦平台是实现在标准平板上的。在工作的接收模式下，所吸收的电力特定地指向局部化RF端口804和806。该结构对于物理上的小接收器而言是理想的，其中，需要将所接收的电力同时分发给多个信道。此外，多个密集设置的RF端口804和806可以接收相位控制，从而产生电子调制RF模式。
在所示出的示例中，每个超材料晶胞802的尺寸为6mm×6mm×1.5mm(手环厚度)或0.11×0.11×0.03λ3，其中，λ为工作频率下的波长。整个超材料结构的尺寸为6mm×18mm×1.5mm或者0.11×0.33×0.03λ3。可以使用可替代尺寸的超材料晶胞802和可替代的手环厚度。
图8B示出了用于描绘根据示例性实施例的、图8A中的被配置成天线阵列的超材料板800的回波损耗的图形。作为天线阵列的超材料板800的回波损耗(反射功率)是以dB来度量的。阻抗匹配是在-10dB处。阻抗匹配表示作为天线阵列的超材料板800与标准RF端口相匹配，该标准RF端口的阻抗通常为50欧姆。-10dB级别下的阻抗匹配带宽为2GHz或者是超材料板800的中心频率的35％。这限定了作为平坦天线阵列的超材料板的工作频带。
图8C示出了根据示例性实施例的、图8A中的被配置成天线阵列的超材料板的辐射增益模式的等距视图。如图1C所示出的，作为天线阵列的超材料板800具有单个具有能量的定向电磁能波束，该定向电磁能波束向上/向前(即沿着z轴)辐射。该单个定向电磁波束是对所有的超材料晶胞802进行激励而产生的。在所示实施例中，最大增益为3.6dBi至3.8dBi。由于导电背衬层(位于超材料板800的底部)的尺寸与先前的实施例所定义的尺寸相同，因此，与先前的实施例一样，本实施例中的直接辐射也是由多个超材料晶胞802的集体激励引起的。此外，在超材料板800的背侧存在最小辐射，且天线辐射效率约为90％。
图9A示出了根据示例性实施例的包括两个正交子阵列的超材料板的等距视图。在所示实施例中，存在布局在公共介电基板上的两个子阵列902a和902b。两个子阵列902a和902b均具有与4个RF端口连接的三个超材料晶胞，从而使得每个子阵列902a和902b的结构都等同于间隔非常近的四个天线。对于所有的8个RF端口而言，两个子阵列902a和902b的阻抗匹配可以等于图8B所示出的每个超材料板800。
在一实施例中，如果仅图9A中的子阵列902a的超材料晶胞是有效的，则图9B示出了从顶部所观看的3D辐射增益。图9B还示出了结构在z轴上的远场点处的极化，即，电场方向。在一实施例中，如果仅图9A中的子阵列902b的超材料晶胞是有效的，则图9C示出了从顶部所观看的3D辐射增益。图9C还示出了结构在z轴上的远场点处的极化，并且沿着z轴的极化与图9C中的极化正交。
在所示实施例中，当该结构的所有8个RF端口是有效的，即，当两个子阵列902a和902b均具有有效RF端口，则辐射增益如图9D和图9E所示。辐射增益为菱形或旋转方形。当所述结构实现为按照所示出的辐射增益模式的接收器时，明显的是，该结构接收要么沿着x轴要么沿着y轴方向极化的电磁能量。因此，这种具有两个子阵列902a和902b的超材料板结构是非常紧凑且相当高效的双线性极化接收器阵列。这种结构能够接收这两种极化，从而始终存在根据所接收的RF信号为电池或其他可充电装置进行充电的信号。
图10示出了根据示例性实施例的用于形成超材料板的方法。
在步骤1002处，形成背衬层。在超材料板的制造过程中，导电背衬层被设置在超材料板的结构的底部。在步骤1004处，形成超材料层。超材料层可以由超材料基底形成。在一实施例中，可以将超材料层沉积在导电背衬层上方，然后将超材料层蚀刻以在步骤1006处创建超材料晶胞阵列。此后，术语“晶胞”和“超材料晶胞”可以互换使用。在一实施例中，导电背衬层与超材料层之间的间距使得导电背衬层与超材料层之间不存在短路以便于使得超材料晶胞能够进行辐射。可以在超材料层下方、导电背衬层102上方沉积介电层或者通常为二氧化硅的绝缘材料。
在步骤1006处，可以创建多个分区。在超材料层中创建表面。在一实施例中，所创建的表面是大体上平坦表面。在另一实施例中，所创建的表面可以不是大体上平坦表面或平坦表面。超材料层的表面可以由多个分区组成。所述多个分区被创建在超材料层的表面上。多个分区中的每个分区包括相同的晶胞。在一个可替代实施例中，两个不同的分区可以包括不同的晶胞。
在步骤1008处，在每个分区中创建晶胞。晶胞被限定成表面，其周期性地重复填充每个分区的表面。在晶胞的表面内，可以刻划有方形或其他任意形状的金属贴片。在金属贴片内存在孔。孔被限定成使得该孔的边缘位于金属贴片的边缘内且具有一定的间距。在步骤1010处，将金属元件设置在每个孔中以形成晶胞。在一实施例中，该元件是可以被设置在每个孔中以形成晶胞的圆形元件(或盘)。因此，晶胞被限定为包括晶胞表面、所刻划的金属贴片、金属贴片内的孔以及孔内的金属元件组成的复合形状。共同形成超材料层的多个分区中的每个不同的分区可以由不同类型的晶胞组成。
在步骤1012处，在背衬层上形成RF端口。这些RF端口可以位于导电背衬层之上或之后。RF端口可以包括具有任意形状并且由塑料、金属或任意其他便利材料制成的外壳。在步骤1014处，将晶胞连接至RF端口。介电层以被掩模并刻蚀以打开公知为过孔的狭窄侧面开口。每个过孔作为开口分别穿过介电层延伸至超材料层的一部分。在一实施例中，存在过孔的目的是通过将晶胞与RF端口连接来在超材料板的不同金属层之间提供电气路径。
所提供的前述方法描述和处理流程图仅作为示例性目的并且并非意在要求或暗示各个实施例中的步骤必须按照所提出的顺序来执行。本领域的技术人员应当理解的是，可以按照任意顺序来执行前述实施例。文字(诸如，“然后”，“接下来”等)并非意在限制步骤的顺序；这些文字仅简单地用于引导读者阅读对方法的描述。尽管处理流程图可能将操作描述为顺序处理，但是多个这些操作可以并行地或同时执行。此外，操作的顺序可以被重新布置。处理可以对应于方法、函数、过程、子例程、子程序等。当处理对应于函数时，该函数的终止可以对应于所述函数返回到调用函数或主函数。
本文中结合实施例所描述的各个示意性逻辑块、模块、电路以及算法步骤可以实现为电子硬件、计算机软件或两者的组合。为了清楚地说明硬件和软件的这种可互换性，以上主要按照功能对各种示例性的组件、块、模块、电路和步骤进行了说明。这种功能是实施为硬件还是软件取决于特定应用和施加于整个系统上的设计限制条件。对于每个特定应用，本领域技术人员可以用不同方式实现所描述的功能性，但是这些实现决策不应该被解释为导致偏离本发明的保护范围。
各种实施在计算机软件中的实施方式可以通过硬件、软件、固件、中间件、微代码、硬件描述语言、和/或它们的组合来实现。可以用代码段或可执行的机器指令来表示过程、函数、子程序、程序、例程、子例程、模块、软件包、类、或指令、数据结构或程序语句的任意组合。通过传递和/或接收信息、数据、变元、参数、和/或存储器内容，代码段便可以耦合到另一个代码段或硬件电路。信息、变元、参数、数据等可以通过任何合适的方式被传递、转发或发送，所述方式包括存储器共享、消息传递、令牌传递、网络传输等。
用于实现这些系统和方法的实际软件代码或专用控制硬件不限制本发明。因此，在没有参考具体软件代码的情况下描述了这些系统和方法的操作和行为，应当理解，软件和控制硬件可以被设计成实现基于本文描述的系统和方法。
当在软件中执行功能时，该功能可作为一条或多条指令或代码存储在非易失性计算机可读或处理器可读存储介质上。本文所公开的方法或算法的步骤可以体现在处理器可执行软件模块中，该处理器可执行软件模块可以驻留在计算机可读或处理器可读存储介质上。非易失性计算机可读介质或处理器可读介质包括计算机存储介质和有形的存储介质二者，所述二者有利于将计算机程序从一个地方转移到另一个地方。非易失性处理器可读存储介质可以是计算机能够访问的任意可获得的介质。以示例而非限制的方式，该非易失性处理器可读介质可包括RAM、ROM、EEPROM、CD-ROM或其它光盘存储设备、磁盘存储设备或其它磁性存储设备，或可用于存储以指令或数据结构形式可被计算机或处理器访问的所需程序代码的任何其他有形存储介质。本文所使用的磁盘和光盘包括压缩盘(CD)、激光盘、光学盘、数字多功能盘(DVD)、软盘和蓝光盘，其中，磁盘通常以磁的方式再现数据，而光盘采用激光以光学的方式再现数据。上述的组合也应该包含在计算机可读介质的范围内。此外，方法或算法的操作可作为代码和/或指令的一个或任何组合或集合而存在于非易失性处理器可读介质和/或计算机可读介质上，这些介质可以合并到计算机程序产品中。

Claims (20)

1.一种无线传输设备，包括：
超材料层，所述超材料层包括晶胞，其中，所述晶胞包括表面，所述表面具有带孔的金属贴片，所述孔被限定成使得所述孔的边缘位于所述金属贴片的边缘内并且间隔有一定距离，且所述孔内设置有天线元件。
2.根据权利要求1所述的无线传输设备，其中，所述金属贴片是方形的大体上平坦的表面。
3.根据权利要求1所述的无线传输设备，其中，所述天线元件是金属元件。
4.根据权利要求1所述的无线传输设备，其中，所述孔的形状为圆形或椭圆形。
5.根据权利要求1所述的无线传输设备，其中，所述孔是通孔。
6.根据权利要求1所述的无线传输设备，其中，所述晶胞是通过非接触式电容耦合来进行电磁激励的。
7.根据权利要求1所述的无线传输设备，其中，所述晶胞是通过共面耦合来进行电磁激励的。
8.根据权利要求1所述的无线传输设备，其中，所述晶胞是通过使用过孔的直接馈电机制来进行电磁激励的。
9.根据权利要求1所述的无线传输设备，其中，所述晶胞被设计成薄尺寸的反射器。
10.根据权利要求1所述的无线传输设备，其中，所述晶胞尺寸小，且其中，所述小尺寸晶胞被配置成集成到弯曲状且具有几何图案的可佩戴产品上。
11.根据权利要求1所述的无线传输设备，其中，所述晶胞在接收模式下操作成以高接收效率吸收电磁辐射。
12.根据权利要求1所述的无线传输设备，其中，所述晶胞被配置成在介于900MHz至100GHz之间的频带下工作。
13.根据权利要求1所述的无线传输设备，其中，所述晶胞被配置成接收无线信号。
14.一种用于形成晶胞的方法，包括：
使用超材料基底形成超材料层；
在所述超材料层上创建表面；
在所述超材料层的所述表面中创建带孔的金属贴片；以及
在所述孔中设置天线元件以形成所述晶胞。
15.根据权利要求14所述的用于形成晶胞的方法，还包括形成所述超材料基底。
16.根据权利要求14所述的用于形成晶胞的方法，其中，创建所述表面包括创建大体上平坦的表面。
17.根据权利要求14所述的用于形成晶胞的方法，其中，创建所述孔包括创建圆形或椭圆形孔。
18.根据权利要求14所述的用于形成晶胞的方法，其中，设置所述天线元件包括设置金属元件。
19.根据权利要求14所述的用于形成晶胞的方法，其中，形成的所述晶胞被配置成在介于900MHz至100GHz之间的频带下工作。
20.根据权利要求14所述的用于形成晶胞的方法，其中，形成的所述晶胞被配置成接收无线信号。
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