CN106796399B - 正型感光性树脂组合物、图案固化膜的制造方法、固化物、层间绝缘膜、覆盖涂层、表面保护膜和电子部件 - Google Patents

正型感光性树脂组合物、图案固化膜的制造方法、固化物、层间绝缘膜、覆盖涂层、表面保护膜和电子部件 Download PDF

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CN106796399B
CN106796399B CN201580053869.5A CN201580053869A CN106796399B CN 106796399 B CN106796399 B CN 106796399B CN 201580053869 A CN201580053869 A CN 201580053869A CN 106796399 B CN106796399 B CN 106796399B
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China
Prior art keywords
resin composition
photosensitive resin
film
positive photosensitive
component
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Chinese (zh)
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CN106796399A (zh
Inventor
松川大作
榎本哲也
谷本明敏
吉泽笃太郎
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Actri Microsystems Co ltd
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Actri Microsystems Co ltd
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Priority claimed from PCT/JP2015/052382 external-priority patent/WO2016121035A1/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN201580053869.5A 2014-10-02 2015-10-01 正型感光性树脂组合物、图案固化膜的制造方法、固化物、层间绝缘膜、覆盖涂层、表面保护膜和电子部件 Active CN106796399B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2014-204005 2014-10-02
JP2014204005 2014-10-02
JPPCT/JP2015/052382 2015-01-28
PCT/JP2015/052382 WO2016121035A1 (ja) 2015-01-28 2015-01-28 ポジ型感光性樹脂組成物、パターン硬化膜の製造方法、層間絶縁膜、カバーコート層、表面保護膜及び電子部品
PCT/JP2015/005021 WO2016051809A1 (ja) 2014-10-02 2015-10-01 ポジ型感光性樹脂組成物、パターン硬化膜の製造方法、硬化物、層間絶縁膜、カバーコート層、表面保護膜及び電子部品

Publications (2)

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CN106796399A CN106796399A (zh) 2017-05-31
CN106796399B true CN106796399B (zh) 2021-01-22

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Country Status (5)

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JP (2) JP6743701B2 (ja)
KR (1) KR102585279B1 (ja)
CN (1) CN106796399B (ja)
TW (1) TWI708994B (ja)
WO (1) WO2016051809A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6665646B2 (ja) * 2016-04-08 2020-03-13 日立化成デュポンマイクロシステムズ株式会社 パターン硬化膜の製造方法、電子部品の製造方法、及び当該パターン硬化膜の製造方法に用いるポジ型感光性樹脂組成物
KR102337564B1 (ko) * 2018-09-28 2021-12-13 삼성에스디아이 주식회사 감광성 수지 조성물, 이를 이용한 감광성 수지막 및 전자 소자

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TW201321899A (zh) * 2011-11-09 2013-06-01 Jnc Corp 正型感光性組成物

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DE2931297A1 (de) 1979-08-01 1981-02-19 Siemens Ag Waermebestaendige positivresists und verfahren zur herstellung waermebestaendiger reliefstrukturen
US4927736A (en) 1987-07-21 1990-05-22 Hoechst Celanese Corporation Hydroxy polyimides and high temperature positive photoresists therefrom
JPH05181274A (ja) * 1991-12-26 1993-07-23 Nippon Steel Chem Co Ltd ポリイミド系感光性樹脂
TWI255393B (en) * 2000-03-21 2006-05-21 Hitachi Chemical Co Ltd Photosensitive resin composition, photosensitive element using the same, process for producing resist pattern and process for producing printed wiring board
US6969576B2 (en) * 2001-11-30 2005-11-29 Sandia National Laboratories Photosensitive dissolution inhibitors and resists based on onium salt carboxylates
JP3812654B2 (ja) * 2002-01-23 2006-08-23 Ｊｓｒ株式会社 ポジ型感光性絶縁樹脂組成物およびその硬化物
CN100457749C (zh) * 2003-01-22 2009-02-04 Jsr株式会社 锍盐化合物、辐射敏感性酸产生剂和正型辐射敏感性树脂组合物
KR100774672B1 (ko) * 2004-05-07 2007-11-08 히다치 가세이듀퐁 마이쿠로시스데무즈 가부시키가이샤 포지티브형 감광성 수지 조성물, 패턴의 제조방법 및전자부품
JP4777644B2 (ja) * 2004-12-24 2011-09-21 Ｏｋｉセミコンダクタ株式会社 半導体装置およびその製造方法
US7803510B2 (en) * 2005-08-17 2010-09-28 Fujifilm Electronic Materials U.S.A., Inc. Positive photosensitive polybenzoxazole precursor compositions
JP2008015184A (ja) * 2006-07-05 2008-01-24 Sekisui Chem Co Ltd ポジ型感光性組成物、パターン膜の製造方法及び半導体素子
US9519216B2 (en) * 2008-02-04 2016-12-13 Fujifilm Electronic Materials U.S.A., Inc. Positive photosensitive resin compositions
JP5169446B2 (ja) 2008-04-28 2013-03-27 日立化成デュポンマイクロシステムズ株式会社 感光性樹脂組成物、該樹脂組成物を用いたポリベンゾオキサゾール膜、パターン硬化膜の製造方法及び電子部品
JP2010139931A (ja) * 2008-12-15 2010-06-24 Toyobo Co Ltd ポジ型感光性樹脂組成物およびパターン形成方法
TWI397546B (zh) * 2010-01-14 2013-06-01 Chang Chun Plastics Co Ltd 新穎水溶性聚醯亞胺樹脂、其製法及其用途
JP5806493B2 (ja) * 2011-03-31 2015-11-10 太陽インキ製造株式会社 ポジ型感光性樹脂組成物、ドライフィルム、硬化物及びプリント配線板
JP2013256603A (ja) * 2012-06-13 2013-12-26 Hitachi Chemical Dupont Microsystems Ltd 樹脂組成物、該樹脂組成物を用いたパターン硬化膜の製造方法及び電子部品
JP2015022228A (ja) * 2013-07-22 2015-02-02 Jnc株式会社 ポジ型感光性組成物

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JP2007240555A (ja) * 2006-03-03 2007-09-20 Hitachi Chemical Dupont Microsystems Ltd ポジ型感光性ポリアミドイミド樹脂組成物、パターンの製造方法及び電子部品
TW201321899A (zh) * 2011-11-09 2013-06-01 Jnc Corp 正型感光性組成物

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Publication number Publication date
TWI708994B (zh) 2020-11-01
JP2020126271A (ja) 2020-08-20
KR20170063625A (ko) 2017-06-08
WO2016051809A1 (ja) 2016-04-07
JP6919746B2 (ja) 2021-08-18
TW201619699A (zh) 2016-06-01
JPWO2016051809A1 (ja) 2017-08-10
CN106796399A (zh) 2017-05-31
KR102585279B1 (ko) 2023-10-05
JP6743701B2 (ja) 2020-08-19

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