CN106367730B - 用于沉积第13族金属或类金属氮化物膜的方法 - Google Patents

用于沉积第13族金属或类金属氮化物膜的方法 Download PDF

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CN106367730B
CN106367730B CN201610592097.9A CN201610592097A CN106367730B CN 106367730 B CN106367730 B CN 106367730B CN 201610592097 A CN201610592097 A CN 201610592097A CN 106367730 B CN106367730 B CN 106367730B
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plasma
aluminum
nitrogen
group
reactor
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CN106367730A (zh
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雷新建
金武性
S·V·伊万诺夫
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Versum Materials US LLC
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    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
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    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
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CN201610592097.9A 2015-07-24 2016-07-25 用于沉积第13族金属或类金属氮化物膜的方法 Expired - Fee Related CN106367730B (zh)

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US201562196494P 2015-07-24 2015-07-24
US62/196,494 2015-07-24
US15/210,172 2016-07-14
US15/210,172 US10745808B2 (en) 2015-07-24 2016-07-14 Methods for depositing Group 13 metal or metalloid nitride films

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US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
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US10763103B2 (en) * 2015-03-31 2020-09-01 Versum Materials Us, Llc Boron-containing compounds, compositions, and methods for the deposition of a boron containing films
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
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