CN105993061A - 半导体装置的制造方法 - Google Patents

半导体装置的制造方法 Download PDF

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CN105993061A
CN105993061A CN201480075475.5A CN201480075475A CN105993061A CN 105993061 A CN105993061 A CN 105993061A CN 201480075475 A CN201480075475 A CN 201480075475A CN 105993061 A CN105993061 A CN 105993061A
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semiconductor device
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久我正
久我正一
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Mitsubishi Electric Corp
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Abstract

具有：涂敷工序，在晶片(12)的表面涂敷含有溶媒的材料(14A)；挥发工序，对材料进行加热而使溶媒挥发；以及冲洗工序，在使晶片进行旋转的同时从第1喷嘴(20)向晶片的表面的外周部喷射对材料进行去除的边缘冲洗液，在冲洗工序中，从第2喷嘴(24)向晶片的背面喷射对晶片的背面进行清洗的背部冲洗液，使从第2喷嘴喷射的背部冲洗液绕至晶片的表面而将材料中的在俯视观察时与定位边或者凹坑接触的部分去除。

Description

半导体装置的制造方法
技术领域
本发明涉及在例如LSI(大规模集成电路)等的制造中使用的半导体装置的制造方法。
背景技术
在专利文献1中，公开了对在晶片的表面形成的抗蚀剂(材料)的周缘部进行溶解去除的内容。
专利文献1：日本特开平8－264418号公报
发明内容
由于在晶片的外周部形成的材料在曝光工序等随后的工序中成为污染源，或者附着于晶片的输送臂，使晶片从输送臂掉落，因此希望将该材料去除。但是，即使在使晶片进行旋转的同时将冲洗液喷射至在晶片的外周部形成的材料而将该部分的材料去除，在晶片的中央部形成的材料也会向外周部扩展。因此，存在不能将在该外周部形成的材料去除这一问题。
特别地，在材料的粘度高的情况下，或者在材料所含有的溶媒的挥发性低的情况下，存在与晶片的旋转相伴的离心力导致材料向外周部的扩展变得显著这一问题。
本发明就是为了解决上述问题而提出的，其目的在于提供一种半导体装置的制造方法，该半导体装置的制造方法能够将在晶片的表面的外周部形成的材料可靠地去除。
本发明所涉及的半导体装置的制造方法的特征在于，具有：涂敷工序，在晶片的表面涂敷含有溶媒的材料；挥发工序，对该材料进行加热而使该溶媒挥发；以及冲洗工序，在使该晶片旋转的同时从第1喷嘴向该晶片的表面的外周部喷射对该材料进行去除的边缘冲洗液。
本发明的其他特征将在下面得以明确。
发明的效果
根据本发明，由于使抗蚀剂的溶媒挥发，因此能够将在晶片的表面的外周部形成的材料可靠地去除。
附图说明
图1是对涂敷工序进行说明的图。
图2是对预冲洗工序进行说明的图。
图3是对挥发工序进行说明的图。
图4是对冲洗工序进行说明的图。
图5是表示对定位边相邻材料进行去除的图。
图6是表示对定位边相邻材料进行去除的图。
图7是冲洗工序后的晶片的俯视图。
具体实施方式
参照附图，对本发明的实施方式所涉及的半导体装置的制造方法进行说明。对相同或者相对应的结构要素标注相同的标号，有时省略重复的说明。
实施方式
首先，如图1所示，利用旋转卡盘10对晶片12进行真空吸附。然后，在晶片12的表面涂敷材料14。具体地说，针对借助于旋转卡盘10而旋转的晶片12，从在晶片12上方设置的喷嘴16供给材料14。将该工序称为涂敷工序。此外，材料14是含有溶媒的抗蚀剂(resist)。
然后，使处理进入预冲洗工序。图2是对预冲洗工序进行说明的图。在预冲洗工序中，通过使旋转卡盘10旋转，从而使晶片12旋转，与此同时，对晶片12表面的外周部喷射边缘冲洗液，对晶片12的背面喷射背部冲洗液。
具体地说，从在晶片12上方设置的第1喷嘴20喷射使材料14溶解而去除该材料14的边缘冲洗液22。边缘冲洗液22喷射至晶片12表面的外周部。另外，从在晶片12下方设置的第2喷嘴24喷射对晶片12的背面进行清洗的背部冲洗液26。背部冲洗液26喷射至晶片12的背面。此外，边缘冲洗液22和背部冲洗液26例如是γ―丁内酯(Butyrolactone)或者NMP等有机溶剂，但不特别地限定于此。
在预冲洗工序中，由于材料14与晶片12的旋转相伴而同心圆状地向外侧扩展，因此不能将晶片12表面的外周部的材料14完全去除。在预冲洗工序中材料14向外侧扩展的原因在于，在材料14中残留有溶媒。
然后，使处理进入挥发工序。图3是对挥发工序进行说明的图。在挥发工序中，首先，将晶片12向热板30输送。然后，利用热板30对材料14进行加热(烘烤干燥)，使溶媒挥发。溶媒挥发后的材料14A比图2的材料14略薄。
然后，使处理进入冲洗工序。图4是对冲洗工序进行说明的图。在冲洗工序中，首先，将晶片12向旋转卡盘10输送。然后，在使晶片12旋转的同时从第1喷嘴20向晶片12表面的外周部喷射对材料14A进行去除的边缘冲洗液22。此时，由于材料14A的溶媒挥发，因此材料14A干燥，材料14A不会向外侧扩展。因此，能够将材料14A中的在晶片12表面的外周部形成的部分可靠地去除。
另外，在冲洗工序中，从第2喷嘴24向晶片12的背面喷射对晶片12的背面进行清洗的背部冲洗液26。由此，能够对晶片12的背面进行清洗。
并且，在冲洗工序中，将材料14A中的在俯视观察时与定位边(orientation flat)接触的部分(以下称为定位边相邻材料14a)去除。图5、6是表示对定位边相邻材料14a进行去除的图。如图5所示，由于第1喷嘴20的位置被调整为边缘冲洗液22触及在晶片的外周部涂敷的材料，因此边缘冲洗液22不会触及定位边相邻材料14a。
在本发明的实施方式中，与第1喷嘴20相比，将第2喷嘴24设置于晶片12中央侧(旋转卡盘10中央侧)，使从第2喷嘴24喷出的背部冲洗液26在晶片12旋转的过程中始终触及晶片12的背面。并且，使从第2喷嘴24喷射的背部冲洗液26绕至晶片12的表面而将前述定位边相邻材料14a去除。在图5中示出下述情况，即，背部冲洗液26绕至晶片12的表面侧，将定位边相邻材料14a的一部分去除。在图6中示出下述情况，即，从图5的状态起，定位边相邻材料14a的去除进一步推进，定位边相邻材料被去除。
如上所述，为了使从第2喷嘴24喷射的背部冲洗液26绕至晶片12的表面，优选使晶片12以700～1000rpm旋转，并且从第2喷嘴24以100～150ml/分钟的流量喷射背部冲洗液。如果晶片12的旋转速度比上述的范围低，则除定位边相邻材料14a以外的材料14A的去除量剧增。另一方面，如果晶片12的旋转速度比上述范围高，则背部冲洗液26不会绕至晶片12表面。
图7是冲洗工序后的晶片12的俯视图。晶片12表面的外周部的材料被去除。而且，由于定位边相邻材料也被去除，因此晶片12的外侧的部分全部露出。
如果结束了上述各工序，则将晶片12向曝光装置输送，实施公知的光刻(Lithography)工序。如上所述，根据本发明的实施方式所涉及的半导体装置的制造方法，能够将在晶片12表面的外周部形成的材料可靠地去除。
本发明的最重要的特征在于，通过设置挥发工序，从而防止在冲洗工序中材料14A由于离心力而向外周侧扩展。因此，上述实施方式所涉及的半导体装置的制造方法在不脱离本特征的范围能够进行各种变形。
例如，针对具有凹坑(notch)的晶片，通过实施上述工序，从而也能够得到本发明的效果。另外，在不需要去除材料中的在俯视观察时与定位边或者凹坑接触的部分的情况下，不需要使从第2喷嘴24喷射的背部冲洗液26绕至晶片12的表面。在该情况下，对冲洗工序中的晶片12的旋转速度、以及从第2喷嘴24喷射的背部冲洗液26的流量不特别地限定。另外，也可以省略第2喷嘴24本身。
涂敷工序和挥发工序之间的预冲洗工序不是必须的。预冲洗工序是为了防止在将涂敷工序后的晶片12向热板30输送时材料附着于输送臂、晶片附着于输送臂或者晶片从输送臂掉落而设置的。因此，如果没有上述问题，则预冲洗工序不是必须的。例如，通过使用能够进行加热的旋转卡盘，将该旋转卡盘作为热板使用，从而能够省略从涂敷工序进入挥发工序时的晶片的输送。
在挥发工序中，也可以利用除热板30以外的手段对晶片12进行加热。例如，也可以将晶片12导入至加热炉，或者在进行涂敷工序的腔室内设置用于对晶片12进行加热的电热线。材料14不限定于抗蚀剂，也可以是例如聚酰亚胺。因此，结束冲洗工序后的工序不限定于曝光工序。
标号的说明
10旋转卡盘，12晶片，14、14A材料，14a定位边相邻材料，16喷嘴，20第1喷嘴，22边缘冲洗液，24第2喷嘴，26背部冲洗液，30热板。

Claims (5)

1.一种半导体装置的制造方法，其特征在于，具有：
涂敷工序，在晶片的表面涂敷含有溶媒的材料；
挥发工序，对所述材料进行加热而使所述溶媒挥发；以及
冲洗工序，在使所述晶片旋转的同时从第1喷嘴向所述晶片的表面的外周部喷射对所述材料进行去除的边缘冲洗液。
2.根据权利要求1所述的半导体装置的制造方法，其特征在于，
所述晶片具有定位边或者凹坑，
在所述冲洗工序中，从第2喷嘴向所述晶片的背面喷射对所述晶片的背面进行清洗的背部冲洗液，
在所述冲洗工序中，使从所述第2喷嘴喷射的背部冲洗液绕至所述晶片的表面而将所述材料中的在俯视观察时与所述定位边或者凹坑接触的部分去除。
3.根据权利要求2所述的半导体装置的制造方法，其特征在于，
在所述冲洗工序中，使所述晶片以700～1000rpm旋转，并且从所述第2喷嘴以100～150ml/分钟的流量喷射所述背部冲洗液。
4.根据权利要求1至3中任一项所述的半导体装置的制造方法，其特征在于，
在所述涂敷工序和所述挥发工序之间具有预冲洗工序，在该预冲洗工序中，在使所述晶片旋转的同时，对所述晶片的表面的外周部喷射边缘冲洗液，对所述晶片的背面喷射背部冲洗液，
在所述预冲洗工序之后将所述晶片向热板输送，
在所述挥发工序中，利用所述热板对所述材料进行加热。
5.根据权利要求1至4中任一项所述的半导体装置的制造方法，其特征在于，
所述材料是抗蚀剂或者聚酰亚胺。
CN201480075475.5A 2014-02-13 2014-02-13 半导体装置的制造方法 Pending CN105993061A (zh)

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