JP6472760B2 - レジスト等のウエハ周縁部からの溶解除去方法 - Google Patents
レジスト等のウエハ周縁部からの溶解除去方法 Download PDFInfo
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- JP6472760B2 JP6472760B2 JP2015562623A JP2015562623A JP6472760B2 JP 6472760 B2 JP6472760 B2 JP 6472760B2 JP 2015562623 A JP2015562623 A JP 2015562623A JP 2015562623 A JP2015562623 A JP 2015562623A JP 6472760 B2 JP6472760 B2 JP 6472760B2
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- 238000000034 method Methods 0.000 title claims description 31
- 239000000463 material Substances 0.000 claims description 59
- 239000007788 liquid Substances 0.000 claims description 32
- 230000002093 peripheral effect Effects 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000002904 solvent Substances 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- -1 γ-butyl lactone Chemical class 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/02087—Cleaning of wafer edges
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/0209—Cleaning of wafer backside
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31058—After-treatment of organic layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54493—Peripheral marks on wafers, e.g. orientation flats, notches, lot number
Description
まず、図1に示すように、スピンチャック10でウエハ12を真空吸着する。そして、ウエハ12の表面に材料14を塗布する。具体的には、スピンチャック10で回転させられたウエハ12に対し、ウエハ12の上方に設けられたノズル16から材料14を供給する。この工程を塗布工程と称する。なお、材料14は溶媒を含むレジストである。
Claims (4)
- ウエハの表面に溶媒を含む材料を塗布する塗布工程と、
前記材料を加熱して前記溶媒を揮発させる揮発工程と、
前記ウエハを回転させつつ、前記材料を除去するエッジリンス液を第1ノズルから前記ウエハの表面の外周部へ噴射するリンス工程と、を備え、
前記ウエハはオリフラ又はノッチを有し、
前記リンス工程では、前記ウエハの裏面を洗浄するバックリンス液を、前記第1ノズルよりも前記ウエハの中央側に設けた第2ノズルから前記ウエハの裏面へ噴射し、
前記リンス工程では、前記材料のうち平面視で前記オリフラ又はノッチに接する部分を、前記第2ノズルから噴射したバックリンス液を前記ウエハの表面に回りこませて除去し、
前記リンス工程により、前記ウエハの表面の外周部が環状に露出することを特徴とする半導体装置の製造方法。 - 前記リンス工程では、前記ウエハを700〜1000rpmで回転させつつ、前記第2ノズルから100〜150ml/分の流量で前記バックリンス液を噴射することを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記塗布工程と前記揮発工程の間に、前記ウエハを回転させつつ、前記ウエハの表面の外周部にエッジリンス液を噴射し前記ウエハの裏面にバックリンス液を噴射する予備リンス工程を備え、
前記予備リンス工程の後に前記ウエハをホットプレートへ搬送し、
前記揮発工程では、前記ホットプレートにより前記材料を加熱することを特徴とする請求項1又は2に記載の半導体装置の製造方法。 - 前記材料はレジスト又はポリイミドであることを特徴とする請求項1〜3のいずれか1項に記載の半導体装置の製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2014/053334 WO2015121947A1 (ja) | 2014-02-13 | 2014-02-13 | レジスト等のウエハ周縁部からの溶解除去方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2015121947A1 JPWO2015121947A1 (ja) | 2017-03-30 |
JP6472760B2 true JP6472760B2 (ja) | 2019-02-20 |
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Application Number | Title | Priority Date | Filing Date |
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JP2015562623A Active JP6472760B2 (ja) | 2014-02-13 | 2014-02-13 | レジスト等のウエハ周縁部からの溶解除去方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9760007B2 (ja) |
JP (1) | JP6472760B2 (ja) |
CN (1) | CN105993061A (ja) |
DE (1) | DE112014006368B4 (ja) |
WO (1) | WO2015121947A1 (ja) |
Families Citing this family (8)
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JP6704258B2 (ja) * | 2016-02-03 | 2020-06-03 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置及びコンピュータ読み取り可能な記録媒体 |
TWI759147B (zh) * | 2016-08-12 | 2022-03-21 | 美商因普利亞公司 | 減少邊緣珠區域中來自含金屬光阻劑之金屬殘留物的方法 |
JP2019067894A (ja) * | 2017-09-29 | 2019-04-25 | エイブリック株式会社 | 半導体装置の製造方法 |
US20190139789A1 (en) * | 2017-11-06 | 2019-05-09 | Canon Kabushiki Kaisha | Apparatus for imprint lithography comprising a logic element configured to generate a fluid droplet pattern and a method of using such apparatus |
JP7240944B2 (ja) * | 2019-04-23 | 2023-03-16 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
TW202137839A (zh) * | 2019-12-17 | 2021-10-01 | 日商東京威力科創股份有限公司 | 基板處理方法及基板處理裝置 |
US20230369037A1 (en) * | 2020-10-12 | 2023-11-16 | Nissan Chemical Corporation | Method for manufacturing wafer having functional film |
WO2023003215A1 (ko) * | 2021-07-21 | 2023-01-26 | 삼성에스디아이 주식회사 | 패턴 형성 방법 |
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2014
- 2014-02-13 JP JP2015562623A patent/JP6472760B2/ja active Active
- 2014-02-13 US US15/102,329 patent/US9760007B2/en active Active
- 2014-02-13 CN CN201480075475.5A patent/CN105993061A/zh active Pending
- 2014-02-13 WO PCT/JP2014/053334 patent/WO2015121947A1/ja active Application Filing
- 2014-02-13 DE DE112014006368.1T patent/DE112014006368B4/de active Active
Also Published As
Publication number | Publication date |
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DE112014006368T5 (de) | 2016-10-27 |
DE112014006368B4 (de) | 2024-05-08 |
US20170207080A1 (en) | 2017-07-20 |
JPWO2015121947A1 (ja) | 2017-03-30 |
CN105993061A (zh) | 2016-10-05 |
WO2015121947A1 (ja) | 2015-08-20 |
US9760007B2 (en) | 2017-09-12 |
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