CN105002451B - 金属镀覆方法以及由此生产出的镀层 - Google Patents
金属镀覆方法以及由此生产出的镀层 Download PDFInfo
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- CN105002451B CN105002451B CN201510357853.5A CN201510357853A CN105002451B CN 105002451 B CN105002451 B CN 105002451B CN 201510357853 A CN201510357853 A CN 201510357853A CN 105002451 B CN105002451 B CN 105002451B
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- alloy
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- 239000011248 coating agent Substances 0.000 title claims abstract description 74
- 238000000576 coating method Methods 0.000 title claims abstract description 74
- 238000000034 method Methods 0.000 title claims abstract description 39
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- 229910052751 metal Inorganic materials 0.000 title abstract description 34
- 239000002184 metal Substances 0.000 title abstract description 34
- 239000000463 material Substances 0.000 claims abstract description 110
- 239000000758 substrate Substances 0.000 claims abstract description 74
- 229910000831 Steel Inorganic materials 0.000 claims abstract description 65
- 239000010959 steel Substances 0.000 claims abstract description 65
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 61
- 239000000956 alloy Substances 0.000 claims abstract description 61
- 230000008018 melting Effects 0.000 claims abstract description 22
- 238000002844 melting Methods 0.000 claims abstract description 22
- 238000007740 vapor deposition Methods 0.000 claims description 36
- 238000004070 electrodeposition Methods 0.000 claims description 27
- 239000011701 zinc Substances 0.000 claims description 26
- 229910052725 zinc Inorganic materials 0.000 claims description 25
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 22
- 229910052782 aluminium Inorganic materials 0.000 claims description 18
- 239000011777 magnesium Substances 0.000 claims description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 15
- 229910052749 magnesium Inorganic materials 0.000 claims description 15
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 14
- 239000004411 aluminium Substances 0.000 claims description 14
- 238000005275 alloying Methods 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 12
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- 239000000126 substance Substances 0.000 claims description 10
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- 238000007711 solidification Methods 0.000 claims description 4
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- 229910001297 Zn alloy Inorganic materials 0.000 claims description 3
- 235000013766 direct food additive Nutrition 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 claims description 3
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 2
- 229910052684 Cerium Inorganic materials 0.000 claims description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 2
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- 239000011575 calcium Substances 0.000 claims description 2
- 238000001816 cooling Methods 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 2
- 239000011591 potassium Substances 0.000 claims description 2
- 229910052700 potassium Inorganic materials 0.000 claims description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 1
- 238000003786 synthesis reaction Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 33
- 239000010703 silicon Substances 0.000 description 33
- 230000008021 deposition Effects 0.000 description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 8
- 229910002059 quaternary alloy Inorganic materials 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
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- 239000010931 gold Substances 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 229910000611 Zinc aluminium Inorganic materials 0.000 description 5
- HXFVOUUOTHJFPX-UHFFFAOYSA-N alumane;zinc Chemical compound [AlH3].[Zn] HXFVOUUOTHJFPX-UHFFFAOYSA-N 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
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- 238000004140 cleaning Methods 0.000 description 4
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- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910052758 niobium Inorganic materials 0.000 description 4
- 239000010955 niobium Substances 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
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- 230000008859 change Effects 0.000 description 3
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- 239000007789 gas Substances 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 229910052748 manganese Inorganic materials 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 238000003287 bathing Methods 0.000 description 2
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- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
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- 239000007787 solid Substances 0.000 description 2
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- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000851 Alloy steel Inorganic materials 0.000 description 1
- 229910018571 Al—Zn—Mg Inorganic materials 0.000 description 1
- 229910000714 At alloy Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910019752 Mg2Si Inorganic materials 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
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- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
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- 239000012159 carrier gas Substances 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 238000006757 chemical reactions by type Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001976 improved effect Effects 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000001182 laser chemical vapour deposition Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
Classifications
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- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
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- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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Abstract
本文公开了一种用于镀覆金属基板例如钢带的方法。该方法包括:如本文所述,将合金控制材料蒸汽沉积或电沉积到所述基板上,以及将所述基板通过熔融镀覆材料浴,并且使所述镀覆材料的镀层形成到所沉积的合金控制材料上。
Description
本申请是申请日为2008年12月9日、发明名称为“金属镀覆方法以及由此生产出的镀层”的申请号为200880126575.0的专利申请的分案申请。
技术领域
本发明公开了一种镀覆金属基板的方法以及由此生产出的镀层。该方法发现了锌/铝型镀层在钢基板上的具体但不排他的应用。
背景技术
一种镀覆金属基板的已知方法包括将钢带热浸镀在锌和铝的熔融浴中以形成锌/铝合金镀层。该方法被称为工艺。可以向浴中加入硅(大约1.5wt%)以防止在熔融镀覆金属和钢带之间发生过度合金化。在不存在硅的情况下,这种合金化作用可迅速发生,从而所产生出的热量实际上能够加热钢带。在不存在硅的情况下,所得到的镀层因此形成厚的(>20μm)的脆性Al-Fe-Zn合金镀层,从而使得产品毫无用处。在浴中存在硅时,可以形成薄的(约1μm)Al-Fe-Zn-Si四元合金层,其在钢表面上起到覆盖层(blanket)的作用,以使得该表面与熔融镀覆金属隔开,由此防止了快速的合金化并且允许形成足够的镀层覆盖。
但是,硅在浴中的存在引起其它问题。例如,已经观察到,在镀层固化期间,硅针沉淀析出并且在镀层内生长。这些硅针往往与Al-Fe-Zn-Si四元合金层连接,并且可以提供通向合金层的腐蚀路径。这些硅针也会增加镀层的脆性。还有,硅在浴中的存在意味着某些其它浴添加剂例如镁不能用于产生出所期望的镀层性能。例如,硅与镁反应产生出脆性Mg2Si相,这反过来增大了该镀层的脆性。
上面的说明不应该认为是对公知常识的认可。
发明内容
本发明提供了一种镀覆金属基板的方法,所述方法包括以下步骤:
(a)如本文所述,将合金控制材料蒸汽沉积或电沉积到所述基板上;以及
(b)将所述基板通过熔融镀覆材料浴,并且使所述镀覆材料的镀层形成到所沉积的合金控制材料上。
在整个说明书中所采用的术语“合金控制材料”指的是用于控制在金属基板的金属和镀覆材料的一种或多种组分之间合金化程度的材料。
在将金属基板通过熔融材料浴之前,将合金控制材料通过蒸汽沉积或电沉积在金属基板上,在用于在钢基板上形成镀层的锌、铝和硅的浴中对浴硅可实现类似或改进的效果。所述合金控制材料也可以在钢基板上形成替代(例如,甚至更薄)的合金层,以对浴硅实现增强的效果,并且使用更少的材料。因此,在例如蒸汽沉积的合金控制材料为硅的情况下,与在熔融浴中所需的材料相比,可以沉积更少的材料,并且仍然可以实现同样或更好的合金控制结果。
另外,可以将浴配制成为没有硅,这又能够便于形成无硅且因此更易延展的镀层。另外,然后可以将其它添加剂例如镁加入到浴中。
除了前面的段落之外,该方法可以包括向熔融镀覆材料浴加入所述合金控制材料,以在所述基板通过所述熔融镀覆材料浴时,使得蒸汽沉积或电沉积的合金控制材料从所述基板中的溶出降到最低。例如,如果硅为合金控制材料并且所述熔融浴不含硅,则一旦发生润湿,在基板通过熔融浴时,对于从在基板上蒸汽沉积或电沉积的硅中使硅溶出而言存在非常强的驱动力,至少直到在所述基板和所述熔融浴之间就硅而言达到平衡。
该方法可以包括使得在所述蒸汽沉积或电沉积的合金控制材料上氧化物的形成降到最低。优选的是,在进入熔融镀覆材料浴中的基板上,蒸汽沉积或电沉积的合金控制材料上没有任何氧化物。该方法可以包括在将基板传送到熔融镀覆材料浴之前,在蒸汽沉积或电沉积的合金控制材料上形成锌镀层。
该合金控制材料可以通过物理蒸汽沉积技术或化学蒸汽沉积技术或电沉积技术(如下文所述)沉积在基板上。
在这方面,合金控制材料可以沉积到基板上成为具有足够厚度的层,所述厚度足以防止在金属基板的金属和镀覆材料中的一种或多种组分之间出现过度合金化。
该层可以为连续层。
与镀层相比,合金控制材料层可以相对较薄,例如大约(of the order of)为0.01-1.0μm,并且优选小于0.5μm。
该合金控制材料可以为与金属基板的金属和镀覆材料中的一种或多种组分两者都能形成合金的材料,由此能够将镀覆材料的镀层形成到合金控制材料上。
在镀覆材料为锌铝合金的情况下,尤其在金属基板包含钢时,该合金控制材料可以包含Si、Ti、Mn、Ni、Nb、Ta、W和Zn中的任一种或多种。
在蒸汽沉积或电沉积时,Si可能是最佳的,由于其能够模仿在浴中的Si功能,所以替代材料例如Ti、Mn、Ni、Nb、Ta、W、Zn等的蒸汽沉积或电沉积也能够实现类似的有益效果和其它有益效果,例如改变合金层的晶相结构以改善镀层的延展性。
金属基板可以包含钢。
金属基板可以为片材(sheet)形式,更具体地说为金属带材例如钢带。
另外,熔融镀覆材料浴可以包含锌和铝。
锌铝浴可以包含至少10wt%的锌,优选至少20wt%的锌。
典型的锌铝浴可以分别包含55wt%的铝和45wt%的锌。
熔融镀覆材料浴可以包含以下范围的锌、铝和硅(以wt%表示):
铝:40-60
锌:40-60
硅:0.3-3。
在金属基板包含钢并且浴包含锌和铝的情况下,与沉积的合金控制材料(ACM)形成的合金可以包括Al-Fe-Zn-ACM四元合金(例如,在ACM为Si时形成Al-Fe-Zn-Si四元合金)。
熔融镀覆材料浴还可以进一步包含镁。镁可以起到提高镀层例如在酸性或盐性环境中耐腐蚀性的作用,尤其是在暴露出基板和镀层之间边界的切割边缘处。镁含量可以高达浴材料的5wt%。在一个实施方案中,镁可以在浴材料中代替相应部分的锌。但是,根据所需的镀层耐腐蚀性和当前金属成本,镁也可以代替一部分Al,或同时代替一部分Al和Zn。
熔融镀覆材料浴可以不包含元素钛、钙、锰、钾、铋、铈和镧中的任一种或多种作为有意的添加剂。
将基板通过熔融材料浴的步骤可以为热浸镀工艺步骤。
该方法可进一步包括在将合金控制材料蒸汽沉积或电沉积到基板上之前进行化学清洁。
本发明还提供了一种用于在含钢基板上形成锌铝镀层的方法,该方法包括以下步骤:
(a)将材料蒸汽沉积或电沉积到基板上,所述材料能够与钢中的铁和镀层中的铝和锌形成合金;以及
(b)将所述基板通过任选不添加硅的锌铝熔融浴,并且在基板上形成锌铝镀层。
所述蒸汽沉积或电沉积的材料可以为上述合金控制材料。
本发明还提供了一种金属基板,其包括上述蒸汽沉积或电沉积的合金控制材料层,所述合金控制材料层位于所述基板的至少一个表面上。
所述金属基板可以进一步包括上述镀覆材料的镀层。
所述金属基板可以为钢基板。
本发明还提供了一种经镀覆的基板,其包括基板、位于所述基板至少一个表面上的上述蒸汽沉积或电沉积的合金控制材料层、以及位于所述电沉积的合金控制材料层上的上述镀覆材料的镀层。
所述金属基板可以为钢基板。
例如,在金属基板包含钢并且镀覆材料包含锌和铝而且合金控制材料(ACM)与所述镀覆材料形成合金的情况下,所述合金包括Al-Fe-Zn-ACM四元合金(例如,在ACM为Si时为Al-Fe-Zn-Si四元合金)。
附图说明
下面将仅以实例的方式参照附图对本发明作进一步说明,其中:
图1为根据本发明,用于镀覆金属基板(此处为钢带)的方法的一个实施方式的工艺流程示意图;
图2示意性地显示出根据本发明,具有蒸汽沉积的Si层的钢片材的一个实施方式;
图3示意性地显示出根据本发明的又一实施方案,具有新镀覆的Al-Zn-Mg镀层的图2中的钢片材和Si层;以及
图4示意性地显示出固化后图3的钢片材/Si层/镀层。
具体实施方式
首先参照图1,该图示意性地显示出用于镀覆金属基板(通常为钢带)的方法。将成卷钢带10展开,然后使之准备用于随后用合金控制材料进行的蒸汽沉积或电沉积。在这方面,通常采用碱性溶液对钢带进行化学清洁,然后在工段12处将化学清洁溶液干燥。可选的是,可以采用化学溶剂进行清洁。
在一个变型中,在清洁之前,可以将钢带成形为其所期望的形状(例如,波纹状、槽形等)。但是,由于随后蒸汽沉积或电沉积的层非常薄,所以所述钢带通常是柔性的。另外,因为蒸汽沉积或电沉积的层被机械锁定在钢带表面上,所以通常该层能够通过轧辊而不会剥落。因此不必要对钢带进行预成形。
然后,将准备好的钢带送入蒸汽沉积或电沉积工段14,在那里将钢带进行物理蒸汽沉积(PVD)步骤、化学蒸汽沉积(CVD)步骤或者电沉积步骤,这些沉积步骤在钢带上形成合金控制材料层。下面将对这些步骤进行更详细的说明。
更具体地说,在工段14中,将合金控制材料沉积到钢带上,通常沉积在其两面和边缘上,以便合适地制备出用于随后在熔融浴热浸镀的钢带。例如,可以以大约80-180纳米(nm)范围内的厚度将硅蒸汽沉积到钢带上,但是该范围可以根据应用而改变。
然后,将经蒸汽沉积或电沉积的钢带送入热浸镀工段16,其中用已知的方式将钢带浸入在熔融金属浴中,以在钢带上形成浴材料的镀层。通常该浴包含熔融的锌和铝,并且任选还包括熔融的镁。典型的组分比例为55wt%的铝、45wt%的锌(或者存在镁时,则假定42wt%的锌和3wt%的镁)。
作为任选步骤,可以在蒸汽沉积或电沉积工段14之后、并且在热浸镀工段16之前,对钢带进行热处理,从而将蒸汽沉积或电沉积的层预合金化(pre-alloyed)进入钢带的表面层中。在该情况中,使得钢带能够抵抗表面磨损。
另外,在例如蒸汽沉积或电沉积材料包含硅的情况下,在蒸汽沉积工段14之后、并且在热浸镀工段16之前,对钢带进行热处理,使得Si还有Fe更易于随后与熔融镀层反应以形成四元合金层(即,Fe不必扩散穿过Si层)。对钢带进行热处理还可将Si溶解进入熔融镀层中的风险降至最低。
在浸镀之后,在工段16中对钢带进行淬火冷却。然后将该钢带送入:
-喷涂工段18,在那里将所期望颜色的涂料施用到镀层钢带上;或者
-直接送入最终产品工段20,其中将成品钢带切割成合适的长度、包装并且分送。
还有,在涂料固化(例如,在固化炉中)后,将喷涂后的钢带送入该最终产品工段。
沉积
如上所述,在工段14中,该钢带经历物理蒸汽沉积步骤、化学蒸汽沉积步骤或者电沉积步骤,以在其上沉积合金控制材料。
在本方法中所采用的典型的合金控制材料包括硅、钛、锰、镍、铌、钽、钨和锌。硅为最佳的合金控制材料,因为在沉积层相对较薄的情况下,它能够防止钢带中的钢和熔融金属浴中的(特别是)铝之间出现过度合金化。但是,已经观察到钛、锰以及在更低程度上镍、铌、钽和钨也能够提供合金化控制。也可以采用这些材料的混合物来给沉积层提供互补性能。
化学蒸汽沉积(CVD)
在CVD中,将固体材料由气相沉积到基板上。CVD过程包括大气压CVD、低压CVD、金属-有机CVD、等离子辅助CVD和等离子增强CVD、激光CVD、光化学蒸汽沉积、化学蒸汽渗透和化学束外延(chemical beam epitaxy)。
通常在每种情况下,将前体气体(可以稀释在载气中)输送到反应器中并且通过已加热的基板。这些气体在基板处反应或分解,以形成沉积到基板上的固相。改变基板温度以引发所期望的反应类型。
因此,对于在工段14处的CVD而言,将钢带在反应器中加热,并且将包含所要沉积的合金控制材料的蒸汽导入到反应器中。在这方面,所述材料可以采用化合物形式,该化合物更容易挥发(例如,金属-有机化合物),并且该化合物在与已加热的金属基板接触时反应并且分解,从而在基板上留下沉积的金属层(同时使得金属-有机化合物分解)。
物理蒸汽沉积(PVD)
在PVD中,所要沉积的材料以原子水平转移到基板上。而在CVD中,前体材料以气体形式导入到反应器中,在PVD中所要沉积的材料以固体形式开始该过程。作为PVD步骤的示例,在工段14处可以采用溅射镀覆和脉冲激光沉积来沉积合金控制材料。
在PVD步骤中,首先通过用高能源例如电子束或脉冲激光轰击该材料使得合金控制材料蒸发,从而从材料表面轰击出原子并且使其蒸发。然后将蒸发的原子传送至金属基板,并且应用在其上以逐渐镀覆该基板。该镀覆一直持续到达到最佳的厚度层。
电沉积
在电沉积步骤中,通过施加电流以使得来自电解溶液的溶解阳离子还原,来沉积合金控制材料。所要镀覆的钢带在电路中起到阴极的作用,并且在电流的作用下,合金控制材料的溶解阳离子在阴极(即钢带)处还原成金属,并且由此被镀到钢基板上。在一种工艺中,合金控制材料的固态金属阳极溶解,从而给电解液提供了阳离子供应源。在其它情况中,可以采用惰性阳极,在该情况中,必须通过添加制备好的电解质溶液或相关的盐化合物,用合金控制材料的阳离子对电解质溶液进行定期补充。
对沉积层的厚度进行控制以获得最佳的性能。在这方面,在该层太薄的情况下,合金控制材料不足以阻止过度合金化。在该层太厚的情况下,在沉积层的外部区域处沉积材料与基板的合金化反应不充分。这一不充分的反应会影响随后的镀覆步骤。例如,其会导致镀层在沉积层上的粘附力差。其还可导致在镀层和沉积层之间的合金化作用差,并且还会导致沉积的合金控制材料释放到熔融浴中。
现在参照图2、3和4,这些附图显示出在蒸汽沉积中的层形成和随后镀覆的阶段。
首先参照图2,显示出在其上具有蒸汽沉积的硅层的钢带(基底钢带)。在这方面,最小的沉积层厚度为80nm,最大厚度为180nm。这使得Fe和Si之间的合金能够在整个沉积层上形成。因此,通常对蒸汽沉积技术进行调整以提供在该范围内的Si层。
现在参照图3,将沉积后的钢基板导入在热浸镀工段16中的熔融金属浴,以使得能够形成所示的镀膜。该浴没有加入硅,并且硅已经以与Fe形成合金的形式处于蒸汽沉积层中。在施加熔融镀膜期间,铝原子和锌原子扩散进入蒸汽沉积层,并且形成Al-Fe-Zn-Si四元合金。该合金的形成也防止(即控制)了在例如Al和Fe之间出现过度合金化。
优选的硅分布情况为:随后的合金和蒸汽沉积层包含大约8wt%的硅,其余部分包括大约25wt%的Fe、56wt%的Al和11wt%的Zn,并且所得到的镀层优选不存在硅,因此镁可以形成在该层中。
镁的优点在于,其能够防止腐蚀,例如镀膜裂开的情况或通过例如切开经镀覆的钢带,使得基底钢暴露的情况。在这方面,在镀层中的Mg能够迁移至暴露区域,并且形成能够防止基底钢进一步腐蚀的氧化物。因此,Mg能够防止点蚀(corrosion pitting)、腐蚀边缘侧蚀(undercutting)等。
图4示意性地显示出固化后所得到的镀覆的金属基板,镀层包含Al、Zn和Mg,并且合金层包含上述四元合金。
虽然基板通常为金属片材或带材,但是应该理解的是,其它更复杂的轮廓和三维形状也可以适用于本文所述并且限定的采用蒸汽沉积或电沉积的合金控制材料进行镀覆的方法。
另外,虽然已经对该方法和镀层的具体实施方式进行了说明,但是应该理解的是该方法和镀层可以按照许多其它方式实施。
Claims (5)
1.一种镀覆钢带基板的方法,所述方法包括以下步骤:
(a)将钢带从成卷的所述钢带展开;
(b)对所述钢带进行清洁;
(c)通过物理蒸汽沉积技术或化学蒸汽沉积技术或电沉积技术将作为合金控制材料的Si沉积到所述基板上,并形成0.01μm至小于0.5μm的所述合金控制材料的层;
(d)在步骤(c)中将合成控制材料沉积到钢带上后,对所述钢带进行热处理,从而将沉积的合金控制材料预合金化进入所述钢带的表面层中;以及
(e)将所述基板通过包含40-60wt%的铝和40-60wt%的锌以及量为大于0wt%至小于或等于5wt%的镁的熔融镀覆材料浴,且所述熔融镀覆材料浴不含硅作为有意的添加剂,并且将所述镀覆材料的镀层形成到所沉积的合金控制材料上;在所述镀层固化前,所述镀覆材料扩散进入所述合金控制材料层,并在所述基板和所述镀层之间形成Al-Fe-Zn-合金控制材料合金,从而防止所述基板的钢和所述镀层中的镀覆材料的一种或多种组分之间出现过度合金化;
(f)将经镀覆的基板淬火冷却。
2.如权利要求1所述的方法,所述方法还包括将在蒸汽沉积或电沉积的合金控制材料上氧化物的形成降至最低。
3.如权利要求2所述的方法,所述方法还包括将在蒸汽沉积或电沉积的合金控制材料上氧化物的形成降至最低,从而使得进入所述熔融镀覆材料浴中的基板上蒸汽沉积或电沉积的合金控制材料上没有氧化物。
4.如权利要求1-3中任一项所述的方法,所述方法还包括在将所述基板传送到所述熔融镀覆材料浴之前,在蒸汽沉积或电沉积的合金控制材料上形成锌镀层。
5.如权利要求1所述的方法,其中所述熔融镀覆材料浴不包含元素钙、锰、钾、铋、铈和镧中的任一种或多种作为有意的添加剂。
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