CN104956663B - 固态成像元件和成像装置 - Google Patents

固态成像元件和成像装置 Download PDF

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Publication number
CN104956663B
CN104956663B CN201480005997.8A CN201480005997A CN104956663B CN 104956663 B CN104956663 B CN 104956663B CN 201480005997 A CN201480005997 A CN 201480005997A CN 104956663 B CN104956663 B CN 104956663B
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readout
pixels
pixel
line
lines
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Expired - Fee Related
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CN201480005997.8A
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Chinese (zh)
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CN104956663A (zh
Inventor
马渕圭司
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Sony Corp
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Sony Corp
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Priority to CN201810263386.3A priority Critical patent/CN108419034B/zh
Priority to CN202010263907.2A priority patent/CN111556263B/zh
Publication of CN104956663A publication Critical patent/CN104956663A/zh
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    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/767Horizontal readout lines, multiplexers or registers
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/71Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/745Circuitry for generating timing or clock signals
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/7795Circuitry for generating timing or clock signals
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/79Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00Details of television systems
    • H04N5/63Generation or supply of power specially adapted for television receivers

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201480005997.8A 2013-02-21 2014-02-13 固态成像元件和成像装置 Expired - Fee Related CN104956663B (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201810263386.3A CN108419034B (zh) 2013-02-21 2014-02-13 固态成像元件、电子设备和图像传感器的驱动方法
CN202010263907.2A CN111556263B (zh) 2013-02-21 2014-02-13 固态成像元件和成像装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013-032089 2013-02-21
JP2013032089A JP5984018B2 (ja) 2013-02-21 2013-02-21 固体撮像素子、および撮像装置
PCT/JP2014/000734 WO2014129148A1 (en) 2013-02-21 2014-02-13 Solid-state imaging device and imaging apparatus

Related Child Applications (2)

Application Number Title Priority Date Filing Date
CN202010263907.2A Division CN111556263B (zh) 2013-02-21 2014-02-13 固态成像元件和成像装置
CN201810263386.3A Division CN108419034B (zh) 2013-02-21 2014-02-13 固态成像元件、电子设备和图像传感器的驱动方法

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CN104956663A CN104956663A (zh) 2015-09-30
CN104956663B true CN104956663B (zh) 2020-04-14

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CN201480005997.8A Expired - Fee Related CN104956663B (zh) 2013-02-21 2014-02-13 固态成像元件和成像装置
CN202010263907.2A Active CN111556263B (zh) 2013-02-21 2014-02-13 固态成像元件和成像装置
CN201810263386.3A Expired - Fee Related CN108419034B (zh) 2013-02-21 2014-02-13 固态成像元件、电子设备和图像传感器的驱动方法

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CN201810263386.3A Expired - Fee Related CN108419034B (zh) 2013-02-21 2014-02-13 固态成像元件、电子设备和图像传感器的驱动方法

Country Status (6)

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US (4) US9621833B2 (enExample)
JP (1) JP5984018B2 (enExample)
KR (3) KR102566553B1 (enExample)
CN (3) CN104956663B (enExample)
TW (1) TWI592016B (enExample)
WO (1) WO2014129148A1 (enExample)

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JP5984018B2 (ja) * 2013-02-21 2016-09-06 ソニー株式会社 固体撮像素子、および撮像装置
JP6515999B2 (ja) * 2015-03-30 2019-05-22 株式会社ニコン 撮像素子および撮像装置
CN108141575B (zh) * 2015-05-19 2020-10-30 奇跃公司 半全局快门成像器
JP6289425B2 (ja) 2015-09-25 2018-03-07 キヤノン株式会社 撮像素子およびその製造方法、撮像装置、撮像方法ならびにプログラム
WO2017187811A1 (ja) 2016-04-27 2017-11-02 ソニー株式会社 撮像制御装置及び撮像制御方法、並びに撮像装置
EP3748955A1 (en) * 2016-05-31 2020-12-09 Sony Semiconductor Solutions Corporation Imaging apparatus and imaging method, camera module, and electronic apparatus
WO2018088121A1 (ja) * 2016-11-14 2018-05-17 富士フイルム株式会社 撮像装置、撮像方法、及び、撮像プログラム
JP6832155B2 (ja) 2016-12-28 2021-02-24 ソニーセミコンダクタソリューションズ株式会社 画像処理装置、画像処理方法、及び画像処理システム
KR102406996B1 (ko) 2017-04-07 2022-06-08 삼성전자주식회사 이미지 센서
JP7198507B2 (ja) * 2017-08-08 2023-01-04 国立大学法人静岡大学 距離画像測定装置及び距離画像測定方法
JP7023659B2 (ja) 2017-09-29 2022-02-22 キヤノン株式会社 撮像装置、撮像システム、移動体
JP2019149713A (ja) * 2018-02-27 2019-09-05 ソニーセミコンダクタソリューションズ株式会社 センサ素子および電子機器
JP2020028098A (ja) * 2018-08-17 2020-02-20 ソニーセミコンダクタソリューションズ株式会社 撮像装置、電子機器
EP3627830B1 (en) 2018-09-18 2024-11-20 IniVation AG Image sensor and sensor device for imaging temporal and spatial contrast

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CN102468316A (zh) * 2010-11-11 2012-05-23 索尼公司 固态成像设备和电子装置

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CN101964877A (zh) * 2009-07-23 2011-02-02 索尼公司 固体摄像装置、用于固体摄像装置的驱动方法和电子设备
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Also Published As

Publication number Publication date
US20190349548A1 (en) 2019-11-14
US20150381918A1 (en) 2015-12-31
US20170171490A1 (en) 2017-06-15
US9621833B2 (en) 2017-04-11
US10375335B2 (en) 2019-08-06
JP2014165520A (ja) 2014-09-08
KR20230119734A (ko) 2023-08-16
KR20210048581A (ko) 2021-05-03
CN111556263A (zh) 2020-08-18
CN108419034B (zh) 2021-01-19
KR20150122630A (ko) 2015-11-02
WO2014129148A1 (en) 2014-08-28
CN104956663A (zh) 2015-09-30
CN108419034A (zh) 2018-08-17
US20180343411A1 (en) 2018-11-29
JP5984018B2 (ja) 2016-09-06
US10694135B2 (en) 2020-06-23
TW201434316A (zh) 2014-09-01
TWI592016B (zh) 2017-07-11
CN111556263B (zh) 2023-03-24
KR102566553B1 (ko) 2023-08-14
US10070087B2 (en) 2018-09-04

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