TWI592016B - 固態成像器件及成像裝置，以及驅動影像感測器之方法 - Google Patents

固態成像器件及成像裝置，以及驅動影像感測器之方法 Download PDF

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Publication number
TWI592016B
TWI592016B TW102146451A TW102146451A TWI592016B TW I592016 B TWI592016 B TW I592016B TW 102146451 A TW102146451 A TW 102146451A TW 102146451 A TW102146451 A TW 102146451A TW I592016 B TWI592016 B TW I592016B
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TW
Taiwan
Prior art keywords
pixels
pixel
read
switching element
imaging device
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TW102146451A
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English (en)
Chinese (zh)
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TW201434316A (zh
Inventor
馬淵圭司
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新力股份有限公司
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Publication of TW201434316A publication Critical patent/TW201434316A/zh
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Publication of TWI592016B publication Critical patent/TWI592016B/zh

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/745—Circuitry for generating timing or clock signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/767—Horizontal readout lines, multiplexers or registers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/7795—Circuitry for generating timing or clock signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/63—Generation or supply of power specially adapted for television receivers

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
TW102146451A 2013-02-21 2013-12-16 固態成像器件及成像裝置，以及驅動影像感測器之方法 TWI592016B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013032089A JP5984018B2 (ja) 2013-02-21 2013-02-21 固体撮像素子、および撮像装置

Publications (2)

Publication Number Publication Date
TW201434316A TW201434316A (zh) 2014-09-01
TWI592016B true TWI592016B (zh) 2017-07-11

Family

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Family Applications (1)

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TW102146451A TWI592016B (zh) 2013-02-21 2013-12-16 固態成像器件及成像裝置，以及驅動影像感測器之方法

Country Status (6)

Country Link
US (4) US9621833B2 (enExample)
JP (1) JP5984018B2 (enExample)
KR (3) KR20150122630A (enExample)
CN (3) CN108419034B (enExample)
TW (1) TWI592016B (enExample)
WO (1) WO2014129148A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5984018B2 (ja) * 2013-02-21 2016-09-06 ソニー株式会社 固体撮像素子、および撮像装置
CN107431080B (zh) 2015-03-30 2020-07-07 株式会社尼康 拍摄元件及拍摄装置
US9948874B2 (en) * 2015-05-19 2018-04-17 Magic Leap, Inc. Semi-global shutter imager
JP6289425B2 (ja) 2015-09-25 2018-03-07 キヤノン株式会社 撮像素子およびその製造方法、撮像装置、撮像方法ならびにプログラム
WO2017187811A1 (ja) 2016-04-27 2017-11-02 ソニー株式会社 撮像制御装置及び撮像制御方法、並びに撮像装置
EP3726830B1 (en) * 2016-05-31 2025-12-17 Sony Semiconductor Solutions Corporation Image capturing device, image capturing method, camera module, and electronic device
CN110024373B (zh) * 2016-11-14 2021-05-28 富士胶片株式会社 摄像装置、摄像方法及存储介质
JP6832155B2 (ja) 2016-12-28 2021-02-24 ソニーセミコンダクタソリューションズ株式会社 画像処理装置、画像処理方法、及び画像処理システム
KR102406996B1 (ko) 2017-04-07 2022-06-08 삼성전자주식회사 이미지 센서
US11442169B2 (en) * 2017-08-08 2022-09-13 National University Corporation Shizuoka University Distance-image-measuring apparatus and distance-image-measuring method
JP7023659B2 (ja) * 2017-09-29 2022-02-22 キヤノン株式会社 撮像装置、撮像システム、移動体
JP2019149713A (ja) * 2018-02-27 2019-09-05 ソニーセミコンダクタソリューションズ株式会社 センサ素子および電子機器
JP2020028098A (ja) 2018-08-17 2020-02-20 ソニーセミコンダクタソリューションズ株式会社 撮像装置、電子機器
EP3627830B1 (en) * 2018-09-18 2024-11-20 IniVation AG Image sensor and sensor device for imaging temporal and spatial contrast

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5848577A (ja) * 1981-09-18 1983-03-22 Semiconductor Res Found 固体撮像装置の画像信号読出し方法
JPH0518309A (ja) 1991-07-12 1993-01-26 Daihatsu Motor Co Ltd エンジン冷却水温の検出値校正装置
JP4349232B2 (ja) * 2004-07-30 2009-10-21 ソニー株式会社 半導体モジュール及びｍｏｓ型固体撮像装置
TW201101476A (en) * 2005-06-02 2011-01-01 Sony Corp Semiconductor image sensor module and method of manufacturing the same
JP2007228460A (ja) * 2006-02-27 2007-09-06 Mitsumasa Koyanagi 集積センサを搭載した積層型半導体装置
FR2924532B1 (fr) 2007-11-30 2009-12-18 E2V Semiconductors Capteur d'image a pixel a quatre ou cinq transistors avec reduction de bruit de reinitialisation
KR101448918B1 (ko) 2007-12-18 2014-10-15 삼성전자주식회사 픽셀 데이터의 고속 출력이 가능한 ｃｍｏｓ 이미지 센서
JP5151507B2 (ja) * 2008-01-29 2013-02-27 ソニー株式会社 固体撮像素子、固体撮像素子の信号読み出し方法および撮像装置
JP5165520B2 (ja) * 2008-10-01 2013-03-21 ソニー株式会社 固体撮像装置、撮像装置、および固体撮像装置のａｄ変換方法
JP5446282B2 (ja) * 2009-01-21 2014-03-19 ソニー株式会社 固体撮像素子およびカメラシステム
JP2010279016A (ja) * 2009-04-30 2010-12-09 Sony Corp 固体撮像素子とその駆動方法および撮像装置
JP5083272B2 (ja) 2009-05-07 2012-11-28 ソニー株式会社 半導体モジュール
JP2010283624A (ja) * 2009-06-05 2010-12-16 Panasonic Corp 固体撮像装置およびその制御方法
JP5402349B2 (ja) * 2009-07-23 2014-01-29 ソニー株式会社 固体撮像装置とその駆動方法、及び電子機器
US8310580B2 (en) * 2009-07-27 2012-11-13 Sony Corporation Solid-state imaging device and camera system for suppressing occurrence of quantization vertical streaks
JP5458869B2 (ja) 2009-12-21 2014-04-02 ソニー株式会社 固体撮像装置およびその駆動方法、カメラ
TWI513301B (zh) * 2010-06-02 2015-12-11 新力股份有限公司 半導體裝置，固態成像裝置及相機系統
JP5500007B2 (ja) * 2010-09-03 2014-05-21 ソニー株式会社 固体撮像素子およびカメラシステム
CN102401906B (zh) * 2010-09-19 2014-03-12 同方威视技术股份有限公司 辐射探测器及其成像装置、电极结构和获取图像的方法
JP5633323B2 (ja) 2010-11-11 2014-12-03 ソニー株式会社 固体撮像装置及び電子機器
JP2012109658A (ja) * 2010-11-15 2012-06-07 Sony Corp 固体撮像素子及び参照電圧の調整方法
GB2492387B (en) * 2011-06-30 2017-07-19 Cmosis Nv Pixel array with individual exposure control for a pixel or pixel region
US8817154B2 (en) * 2012-08-30 2014-08-26 Omnivision Technologies, Inc. Image sensor with fixed potential output transistor
JP5984018B2 (ja) * 2013-02-21 2016-09-06 ソニー株式会社 固体撮像素子、および撮像装置

Also Published As

Publication number Publication date
US20150381918A1 (en) 2015-12-31
US20190349548A1 (en) 2019-11-14
US20180343411A1 (en) 2018-11-29
US10694135B2 (en) 2020-06-23
CN104956663B (zh) 2020-04-14
KR20210048581A (ko) 2021-05-03
KR20150122630A (ko) 2015-11-02
KR102566553B1 (ko) 2023-08-14
US20170171490A1 (en) 2017-06-15
CN108419034A (zh) 2018-08-17
US9621833B2 (en) 2017-04-11
CN111556263A (zh) 2020-08-18
TW201434316A (zh) 2014-09-01
JP2014165520A (ja) 2014-09-08
WO2014129148A1 (en) 2014-08-28
CN104956663A (zh) 2015-09-30
US10070087B2 (en) 2018-09-04
JP5984018B2 (ja) 2016-09-06
KR20230119734A (ko) 2023-08-16
CN111556263B (zh) 2023-03-24
CN108419034B (zh) 2021-01-19
US10375335B2 (en) 2019-08-06

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