CN104701304B - 用于已封装管芯的陶瓷上天线 - Google Patents

用于已封装管芯的陶瓷上天线 Download PDF

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Publication number
CN104701304B
CN104701304B CN201410634848.XA CN201410634848A CN104701304B CN 104701304 B CN104701304 B CN 104701304B CN 201410634848 A CN201410634848 A CN 201410634848A CN 104701304 B CN104701304 B CN 104701304B
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antenna
encapsulation
ceramic substrate
tube core
substrate
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CN104701304A (zh
Inventor
A.沃特
S.马鲁塔穆图
M.克努德森
T.梅耶
G.塞德曼恩
P.赫雷罗
P.贾尔温恩
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Intel Corp
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Intel Corp
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Abstract

描述了一种可被用于已封装管芯的陶瓷上天线。在一个示例中，封装具有管芯、管芯上面的陶瓷基板、被附着于陶瓷基板的天线、以及将天线电连接到管芯的导电引线。

Description

用于已封装管芯的陶瓷上天线
技术领域
本公开涉及无线电芯片封装领域，并且特别地涉及将天线与陶瓷组合以用于到封装中的芯片的连接。
背景技术
半导体和微机电管芯或芯片经常被封装以用于针对外部环境的保护。该封装提供物理保护、稳定性、外部连接以及在某些情况下对封装内部的管芯的冷却。通常将管芯附着于基板且然后将附着于基板的盖放置在管芯上。替换地，管芯被附着于盖且然后在管芯上形成封装基板。随着设计更多的设备以提供无线连接，封装适合于允许天线被连接到在封装内部的一个或多个芯片。外部天线连接增加生产设备的组装复杂性和成本。
通常在用于设备的系统板上或在已连接PCB（印刷电路板）上形成天线。到芯片封装的连接经由PCB实现。这是通过PCB以及封装基板而到达芯片的长且复杂的连接。阻抗难以控制且在界面处存在反射。虽然PCB上的天线是廉价的，但天线的质量受限。在某些情况下，使用单独外部天线，其生产和封装起来更加昂贵且可具有甚至更加复杂的连接路径。
随着无线设备的尺寸减小，RF（射频）封装被放置得更加接近于数字和基带封装。数字和基带封装通常产生可能中断或损害RF系统的操作的噪声和干扰。RF封装和天线通常产生可能中断相互的及数字和基带封装的操作的噪声和干扰。结果，部件被间隔开且被覆盖封装内部的芯片的金属外壳所屏蔽。在某些情况下，封装可包括内部屏蔽以避免分别地来自数字电路或RF部件的干扰。这进一步增加了设备的尺寸和复杂性。
附图说明
在其中相同的附图标记指示类似元件的附图的各图中以示例的方式而不是限制的方式举例说明本发明的实施例。
图1是根据本发明的实施例的具有在陶瓷基板上的天线的eWLB封装的截面侧视图。
图2是根据本发明的实施例的具有附着于管芯的陶瓷基板的替换eWLB封装的截面侧视图。
图3是根据本发明的实施例的具有从陶瓷基板指向正面RDL的过孔的eWLB封装的截面侧视图。
图4是根据本发明的实施例的具有在陶瓷基板中的嵌入式天线的eWLB封装的截面侧视图。
图5是根据本发明的实施例的被堆叠在eWLB封装上的陶瓷基板上的天线的截面侧视图。
图6是根据本发明的实施例的被堆叠在eWLB封装上的替换陶瓷基板上的天线的截面侧视图。
图7是根据本发明的实施例的被堆叠在eWLB封装上的另一替换陶瓷基板上的天线的截面侧视图。
图8A是根据本发明的实施例的形成具有在陶瓷基板上的嵌入式天线的eWLB封装的过程流程图。
图8B是根据本发明的实施例的形成具有在陶瓷基板上的嵌入式天线的倒装芯片封装的过程流程图。
图9是根据实施例的结合了具有在陶瓷基板上的天线的封装的计算设备的框图。
具体实施方式
天线到封装中的集成允许降低的成本和更简单的设备组装。对于诸如移动电话之类的系统而言，封装可能包括天线和被连接到天线的RF芯片。该封装还可包括其它部件，诸如附加芯片、无源部件、重新分布层和屏蔽。可以通过封装将该芯片连接到移动电话的系统板且从而至其它部件。集成天线使得将天线连接到芯片更为容易。其允许用于天线及其连接的更容易的阻抗匹配。其呈现出较小的外形因数、较高的天线质量因数、较高的天线效率和改善的天线灵敏度。
如本文所述，可以在陶瓷上或其中构造天线并将其集成到封装中或封装构造时的封装中。可由被集成到相同封装中的屏蔽来保护该封装内的有源芯片免于由天线发射的RF。可以将陶瓷基板上的封装中的此天线集成到多种不同类型的封装中，所述封装除了其它之外包括eWLB（嵌入式晶片级球栅阵列）以及封装中倒装芯片。
在许多情况下，在其谐振频率下使用天线是有益的。谐振中的天线的最小可能尺寸为约四分之一波长。在被用于移动电话的典型频率下，此尺寸大于通常被连接到天线的芯片类型的许多封装。因此，天线将不会配合在封装中或上面，除非使得封装大得多，这增加封装的成本。例如，晶片级封装的成本与封装的尺寸直接相关地增加。
可以通过在陶瓷基板上形成天线来减小天线的尺寸。可使用具有高介电常数的陶瓷材料。高介电常数允许减小天线的尺寸，因为天线的谐振频率与介电常数的平方根的倒数有关。被用于1类陶瓷电容器的陶瓷材料例如具有达到200的介电常数和小于0.005的损耗角正切。对于由标准FR4材料制成的PCB而言，介电常数为约4.2且损耗角正切为约0.02。
可使用多种不同的陶瓷材料作为用于天线的陶瓷基板。特别常见的陶瓷是铝（III）氧化物（Al2O3），其具有9的介电常数和0.0001的损耗角正切。还可使用低温共烧陶瓷（LTCC）。这些可采取具有某些玻璃的铝（III）氧化物的形式以允许在较低温度下的烧结。LTCC可以具有约5-16的介电常数和约0.0005至0.0035的损耗角正切。
另外，存在针对可使用的电容器开发的多种陶瓷。可使用1类和2类电容器陶瓷两者。1类材料除了其它之外可包括MgNb2O6、ZnNb2O6、MgTa2O6、ZnTa2O6、(ZnMg)TiO3、(ZrSn)TiO4、Ba2Ti9O20。2类材料包括基于钛酸钡（BaTiO3）的具有一个或多个添加物的铁电材料，该添加物诸如硅酸铝、硅酸镁和氧化铝。
可以将在陶瓷上形成的减小尺寸的天线集成到典型尺寸的封装中。结果，封装中的芯片与天线之间的连接比在PCB上的单独天线的情况下短得多。这导致改善的总体性能。可以提供具有在单个封装中的天线和芯片的完整系统以用于组装，其然后可以作为单个部件被简单地附着于设备系统板。天线封装还可结合用于天线连接的任何阻抗匹配。这简化了系统板的设计和制造，因为从系统板去除天线连接去除了匹配系统板上的阻抗以用于该去除连接的需要。
尺寸减小增加了天线质量因数Q，改善了效率并减少了用户的影响。天线受到设备如何被用户持握的影响的可能小得多。
当天线被集成到封装中时，天线与典型封装材料接触或在物理上接近于该典型封装材料。这些材料中的许多具有相对高的损耗角正切，其导致通过材料的RF能量的强耗散，减小了天线的效率和质量因数。通过在适当的陶瓷基板上或其中构造天线，减少了这些损耗。对于该天线而言，用低损耗陶瓷来替换高损耗封装材料。陶瓷还可被天线的RF能量高度极化。该极化针对管芯而屏蔽天线的RF场且针对封装材料而屏蔽天线的RF场。可以进一步地在陶瓷基板上面或管芯之上使用金属屏蔽来增加屏蔽。
虽然描述了其中将天线集成到具有管芯的封装上的实施例。 在其它实施例中，将陶瓷上天线作为单独POP（封装上封装）连接到具有管芯的底部封装。模块化POP方法简化了封装过程，并且允许天线和芯片的独立测试。
图1是具有嵌入式管芯116和在嵌入式陶瓷基板124或陶瓷块的顶部上形成的天线126的eWLB（嵌入式晶片级）封装的截面侧视图。封装具有重新分布层（RDL）110或封装基板，其具有用于到系统板或其它部件的球焊112连接的许多焊盘。嵌入式芯片116被附着于封装基板110且具有用于到基板的连接的焊盘114。RDL通过球焊阵列112将焊盘114从嵌入式芯片连接到系统板。
对于典型eWLB封装而言，首先将芯片116嵌入也称为成型化合物118的模具化合物中。然后在芯片的正面表面上形成正面重新分布层110。RDL可具有最接近于芯片的第一电介质层、具有金属路径的导体层以及焊料终止层。芯片被通过第一电介质层的过孔连接到金属路径。金属路径可由包括铜、铝、钛、钨、镍、钯、金的多种不同金属或包括铜、铝、钛、钨、镍、钯和金中的一个或多个的金属合金中的任何一个形成。
陶瓷基板124也被嵌入成型化合物118中。成型化合物118充当封装盖且完全包围嵌入式芯片以用于保护。在模具化合物上和陶瓷上形成第二背面RDL。其在与正面RDL相对的芯片侧面。背面RDL被示为包括天线126及其到通过模具化合物的过孔120的连接122。通过模具化合物的过孔120将天线连接到正面RDL且从而到嵌入式芯片或到焊球以用于外部连接。导电线122将过孔连接到天线124且可用来允许将天线根据期望接地或供电或在天线与管芯之间传送信号。虽然仅示出了单个芯片和单个通过模具的过孔，但可存在更多。虽然仅示出了几个焊球连接，但可存在更多。
模具或成型化合物可由多种不同材料中的任何一个形成，取决于封装的性质及其预定用途。适当的模具化合物可包括塑料材料或者可由其组成，诸如热固性聚合物或环氧树脂或填充环氧树脂，诸如热固性模具化合物。替换地，可使用底层填料或其它材料来保护管芯。
用成型化合物或与成型化合物118的层压来嵌入芯片。可随着施加成型化合物而将陶瓷板124嵌入成型化合物中。例如，如果当模具工具封闭时陶瓷下降到具有顶部模具版框的封装基板上，则可将陶瓷嵌入成型化合物中。这还允许将具体控制的距离保持在嵌入式芯片116与陶瓷基板124之间。虽然未示出，但可使用连接路径或过孔（未示出）或者使用通过封装基板和模具化合物的过孔（诸如，通模具过孔120）来将天线126直接地连接到嵌入式芯片。封装基板110可以是重新分布层（RDL）以将嵌入式芯片116连接到天线126以及将芯片上的不同连接点相互连接。
作为eWLB封装的替代，封装可以替换地是倒装芯片封装。对于倒装芯片封装而言，用基板来替换正面RDL。该芯片借助于倒装芯片互连被连接到此基板。该基板通常由硅或诸如FR4之类的多种PCB材料中的任何一个形成。对于其它封装类型而言，可使用具有金属路径的累积层来将不同焊盘连接在一起并将芯片上的连接扇出以连接到电路板或其它部件上的相应焊盘。
图2示出了替换封装，其包括具有天线以及可根据特定实施例而使用的某些附加可选特征的嵌入式陶瓷基板。封装基板210承载嵌入式芯片216，其如在图1的示例中一样使用连接焊盘和过孔214而被电连接到封装基板210。封装基板210可以是RDL以将芯片上的连接点连接到多种焊球连接212且通过该焊球连接而至系统或逻辑板。用成型化合物218来覆盖该封装，其在本示例中完全覆盖封装基板和嵌入式芯片。
可通过首先在陶瓷基板224上形成天线226来组装图2的封装。然后将屏蔽层238附着于陶瓷的相对侧且然后可用粘合剂238将组合的被屏蔽天线和陶瓷附着于管芯216。替换地，可在陶瓷基板上形成屏蔽层且然后将陶瓷基板附着于管芯。可在稍后形成天线层作为形成背面RDL 234、222的一部分。
然后可在组件上施加成型化合物218以产生成型化合物与管芯和陶瓷基板的组件的重组晶片。然后可通过对成型化合物进行背面磨削来暴露陶瓷基板，并且可通过模具钻出通模具过孔至屏蔽。
现在用成型化合物来固定与天线相对的管芯正面，并且可将正面RDL 210累积在管芯上。也可以对通模具过孔220进行金属镀敷以通过正面RDL形成连接。作为示例，可在在正面RDL的第1电介质层中打开过孔之后打开到屏蔽层的通模具过孔。在打开之后，沉积籽层。然后向正面施加光致抗蚀剂并结构化。接下来，在抗蚀剂开口中一起对过孔和正面RDL进行镀敷。通过蚀刻籽层来完成结构化。可重复诸如这些之类的过程以在RDL中累积如期望一样多的互连层。
还可将通模具过孔220打开至封装的背面，并且可在封装上形成背面RDL 234、222。过孔现在可以通过模具化合物将天线直接地连接到正面RDL。可以通过附着焊球212并通过模具化合物进行切片以将晶片分离成单独封装来完成该封装。
替换地，可将类似于图2的示例的结构形成为倒装芯片封装。首先，将嵌入式芯片与陶瓷基板224组装。可使用粘合剂238将陶瓷基板附着于嵌入式芯片。可在然后将嵌入式芯片附着于封装基板210之前附着两个部件。可在到基板的附着之前和成型之前用诸如管芯附着膜（DAF）之类的粘合剂将陶瓷附着于管芯。然后可在成型和层压期间将芯片和附着陶瓷的预制组合嵌入模具化合物或类似材料中。
在成型之后，可例如通过磨削将陶瓷从模具化合物释放。然后仍可用薄模具层将其覆盖。可以施加薄电介质而代替模具化合物，取决于特定实施方式。在本示例中，在将陶瓷附着于嵌入式芯片之前向陶瓷基板224的底部施加屏蔽金属层238。可通过通模具过孔230而将此屏蔽层232耦合到定义电位。
在已将芯片和陶瓷附着于基板且已去除成型化合物直至陶瓷的顶部层之后，可附着天线。在本示例中，首先在整个封装的顶部上施加电介质层234。然后对连接到外接地或任何其它期望连接的通模具过孔220进行蚀刻通过成型化合物至封装基板210上的相应焊盘。可在电介质层上面以特定形状和配置形成天线226并布置成通过迹线222而连接到天线过孔220。然后可用另一保护层236、通常为电介质层来覆盖整个封装和天线。
图3示出了封装的另一示例作为类似于图1和2的截面侧视图。封装基板或RDL 310具有焊球连接312，诸如用于附着到外部印刷电路板（PCB）、系统板、逻辑板或其它外部部件的球栅阵列。如在图2的示例中，使用粘合剂338将陶瓷基板324附着于嵌入式芯片316。在嵌入式芯片上的连接焊盘上形成封装基板310。通过基板的过孔314允许芯片316上的焊盘与封装基板相连且通过基板和焊球连接至外部连接。
陶瓷可具有使用通模具过孔330而耦合到电位源的屏蔽层332。这些过孔可通过基板而连接到外部部件或电源。替换地，过孔可连接到基板以访问由基板载送的电位。屏蔽层332在嵌入式芯片与陶瓷基板之间的陶瓷的底侧上。
另外，在封装的顶部上在陶瓷基板上形成天线326。然而，与其中连接迹线222跨封装的顶部引导至延伸通过封装从顶部至底部的整个距离的通模具过孔的图2的示例相反，在本示例中，已跨陶瓷基板的末端和底部部分施加导电迹线322。结果，可使用短得多的通模具过孔320来连接天线信号。过孔将陶瓷基板的底部的一部分连接到封装基板310。陶瓷基板可形成有如图4中所示的通过陶瓷的过孔或在端盖上的导电路径322。这些连接到在陶瓷顶部上的天线结构326。可在将陶瓷附着于嵌入式芯片之前沿着陶瓷的端盖和底部施加形成导电路径的金属化。在此过程期间，根据特定实施方式，还可施加天线324和屏蔽层332。
在将管芯和陶瓷嵌入模具化合物之后，形成过孔和正面RDL。可以多种不同方式中的任何一个完成该封装。在此阶段，将用模具化合物层来覆盖陶瓷。可通过模具化合物的磨削来使天线暴露。磨削还可停止，使得保留薄模具化合物层。替换地，可用薄电介质来覆盖暴露的天线。
在图4的示例中，将天线426嵌入陶瓷基板424中。以通过陶瓷的过孔的形式通过导电路径422来连接天线。此导电路径连接至耦合到封装基板410的通模具过孔420。如在其它示例中，此封装包括具有到外部部件的球栅阵列连接412的封装基板。使用粘合剂438将嵌入封装内的芯片416附着于陶瓷基板424。陶瓷基板还被示为包括底层屏蔽440以及被嵌入陶瓷的天线426。通过将天线嵌入陶瓷中，保护天线免受腐蚀及其它外部损害。另外，可在没有损坏天线的风险的情况下使陶瓷暴露于多种不同过程，诸如磨削、涂敷以及镀敷。
图5示出了另一替换封装设计。在这种情况下，嵌入式芯片516在第一底部封装中，而陶瓷基板524和天线526在第二顶部封装中。两个封装都被作为封装上封装（POP）而附着。这些封装可以是eWLB封装、倒装芯片封装、嵌入式管芯封装或被堆叠的任何其它类型的封装，取决于特定实施方式。通过单独地形成两个封装，不同的封装可以是不同尺寸的。例如，嵌入式天线可以是与保持嵌入式芯片的封装相同或更大的尺寸。从底部封装至天线的连接是使用例如焊球将两个封装连接在一起的通孔。根据特定实施方式，可应用多种不同的封装上封装连接和堆叠技术。
在所示示例中，底部封装是具有通模具过孔520和背面RDL 532的eWLB封装。背面RDL 552由金属化层532、金属化层下面的电介质以及金属化层上面的焊料终止组成。正面RDL 510具有用于到PCB的连接的焊球阵列512。正面RDL 510被附着于被用模具化合物518覆盖的嵌入式芯片516。上或背面重新分布层552包括顶部焊球连接阵列550。顶部封装上的焊球连接阵列比底部封装512上面的焊球连接阵列简单得多，因为顶部封装仅包括天线。重新分布层552还可包括到也可被嵌入底部封装中的附加芯片（未示出）的连接。另外，上重新分布层552可包括屏蔽，其可被或可不被连接到特定电位。在本示例中，RDL提供屏蔽且包括用于到顶部封装的焊球连接的焊盘。RDL被耦合到通模具过孔520中的至少一个以用于对屏蔽进行磨削。该屏蔽也可或者替换地在RDL 552内、在RDL上面或在RDL下面。
上封装包含具有在其顶面526上形成的天线的陶瓷基板。其还可包括通过陶瓷522的过孔，其通过上焊球阵列550而连接到底部封装。这些过孔然后可使用通模具过孔520而连接到正面RDL 510以用于到底部封装中的芯片的连接以及用于如在先前示例中的外部连接。
图6示出了在陶瓷基板524上面或之上形成的天线626的另一示例。在此截面图中，示出了另一封装上封装方法。在这种情况下已向陶瓷基板624的底部而未如在图5中一样向上RDL 552施加屏蔽。另外，本示例使用具有焊料填充通模具过孔620的底部eWLB封装。这允许通过避免背面重新分布层和特定焊料焊盘的使用来简化底部封装。
更详细地看图6，嵌入式芯片616被连接到作为封装基板的正面RDL 610。芯片和基板被覆盖在模具化合物618中。上封装具有陶瓷基板624和附着天线626。已在与天线相对的陶瓷基板的底侧上施加屏蔽层632。该屏蔽层在一侧通过焊料互连650和焊料填充孔而连接到封装基板610。类似地，天线在相对侧使用通陶瓷过孔622连接。从陶瓷基板的底侧，天线类似地在封装的另一侧通过焊料填充过孔而连接到封装基板。
图7示出了其中天线726被嵌入陶瓷基板724内部的类似封装。底部封装具有底部封装RDL或基板710以承载被模具化合物718覆盖的嵌入式芯片716。通模具过孔720从封装基板一直连接到封装的顶部。替换地，可替代地使用焊料填充通模具孔，如图6中所示。陶瓷基板顶部封装在底部封装的顶部处连接到焊球连接750。这些焊球连接允许连接到在陶瓷基板的底部上的屏蔽层和被嵌入基板内的天线。替换地，在此以及图5和6的所述示例中，可在陶瓷基板的一侧或两侧形成RDL。
在本文中已详细地描述了多种不同实施例。在每种情况下，将天线形成为陶瓷基板上面或其中的金属线。陶瓷允许将天线的质量因数增加许多倍。许多封装材料的主要组成部分是具有约3.5的相对电容率的聚酰胺（polymide）。聚酰胺上面的铜迹线天线在约3GHz的频率下具有约20的Q因数。另一方面的陶瓷材料可具有约10的相对电容率。此类陶瓷上面的铜迹线天线可具有约500的Q因数。这提供了信号质量方面的显著益处并允许使得天线显著更小。用于聚酰胺的低得多的Q因数部分地是因为天线具有到封装上面的芯片的强电容耦合。这在陶瓷的情况下被显著地减小。
仅用薄陶瓷基板就改善了天线的Q因数。陶瓷厚度为约10μm就足够了。此类薄层可能难以生产和处理，因此可以在仍提供用于天线的相同或更好益处的同时使得陶瓷基板厚得多。在某些实施例中，陶瓷基板可厚达50μm或者甚至更多地达到并大于500μm。
可在多种不同类型的封装配置中使用陶瓷和天线组合。如本文所述，可将该组合添加到包含半导体、射频或其它类型的芯片的封装中。图1、2、3和4示出了具有被放置在顶部的陶瓷和天线组合的eWLB封装的不同变体。也可将该组合添加到其它类型的封装中。替换地，可将陶瓷和天线组合堆叠在其它封装上，如同其为单独封装一样。图5、6和7示出了具有eWLB底部封装的PoP结构的不同变体，然而，可以其它方式将陶瓷和天线组合与其它封装相堆叠。
在所示示例描述了许多不同变体，但是可替代地将这些应用于其它示例。可将导电屏蔽应用于天线与管芯之间的在同一封装中或在附近封装中的多种不同位置。可在陶瓷上、内插件上、RDL上或其中或在封装或其覆盖材料中的其它位置内形成屏蔽。
同样地，可以许多不同的方式覆盖或保护在大部分所示示例中被示为顶层的天线。该天线可经受腐蚀和物理损坏。可单独地或以组合方式使用涂层、膜以及盖来预防这些损伤。在所示示例中的任何一个中，可用诸如Al或Au之类的金属覆盖天线。还可使用诸如各种氧化物和聚合物之类的电介质涂层。另外，可将单独盖安装在本文所示或所述的任何天线上。
可使用聚酰胺、基于聚苯并恶唑（PBO）的电介质材料、基于苯并环丁烯（BCB）的电介质材料及其它聚合物材料作为天线上的盖层且作为天线下面的盖层。图2示出了在天线与陶瓷之间的在天线之上和下面两者的电介质层。可将电介质的这些使用中的一者或两者应用于天线和陶瓷组合的任何使用。虽然图4和7示出了嵌入陶瓷内的天线，甚至具有嵌入式天线，但可在一侧或多侧用诸如聚合物之类的单独电介质材料来覆盖天线。可在天线的顶侧上使用陶瓷作为附加盖。可与陶瓷的主要部分分开地形成该盖且然后附着在天线上，或者可将其直接在天线和陶瓷的主要部分上形成。
可通过硅基板、模具化合物、通过陶瓷或在这些表面中的某些周围以多种不同方式实现用于天线和任何屏蔽的连接。还可以其它方式（未示出）来实现连接，诸如通过导线引线或外部连接器。
所述陶瓷和天线组合允许将天线与其它部件一起集成到封装中或堆叠在其它部件封装上。这减少了用于器件组装的零件和任务的数目并减小了天线部件组合的尺寸。这些组合通过使天线更加接近于其它部件而改善了效率，减少了功率消耗。其还简化了系统设计，因为不需要向系统中设计阻抗匹配天线路径。向部件中设计了天线连接。
图8A示出了组装具有在嵌入式陶瓷上的天线的封装的方法。首先，在810处，在陶瓷基板上面或其中形成一个或多个天线。可通过沉积、膏印刷或以多种其它方式来形成天线。可通过在陶瓷基板的表面上沉积导电线来附着一个或多个天线。可通过在陶瓷的一部分上形成天线且然后在天线上附着陶瓷的第二部分而在陶瓷的内部形成天线。示例是LTCC技术。替换地，可在金属天线结构周围形成陶瓷。作为另一替换，可在封装陶瓷和管芯之后在陶瓷上面作为背面RDL的一部分而形成天线。无论其如何形成，都还可用诸如防腐蚀金属或电介质保护涂层之类的保护涂层来覆盖天线。
在812处，将陶瓷基板附着于一个或多个管芯。如上所述，可在陶瓷与管芯之间使用屏蔽层。在与天线相对的侧面上可在陶瓷基板上具有电路径，并且可用电介质或用屏蔽或两者来将这些隔离。
在814处，在管芯和陶瓷基板上施加模具或填料以保护管芯免受物理及其它环境影响，并且在816处，针对预定连接而根据期望在模具化合物或填料中形成过孔。可通过首先蚀刻沟道且然后用铜或焊料填充或以多种其它方式中的任何一个来形成过孔。
在818处，在管芯、模具化合物以及具有天线的陶瓷上形成重新分布层。重新分布层可在一侧具有到过孔和管芯的连接。可将在相对侧的接触阵列用于到计算系统的系统板或到其它部件的连接。重新分布层还可具有节距转换，并且包括将天线连接到管芯和系统板两者的路径。
替换地，可将陶瓷基板作为单独封装处理并施加于与管芯相关联的上RDL或封装盖上。在820处，实现天线与任何其它部件或焊盘之间的连接。该连接将包括通过封装基板而将天线电连接到管芯。此封装现在是操作的。通过在天线和管芯上形成附加盖或保护材料而使得封装更加固定。
作为替换过程，图8B在842处以在陶瓷上面或其中形成天线开始。在844处，然后例如用粘合剂将陶瓷基板附着于一个或多个管芯。在846处将具有天线基板的管芯附着于封装基板。可将此类过程用于例如倒装芯片封装。
可以在848处在一个或多个管芯和一个或多个天线上施加诸如模具化合物之类的盖，并且然后可以在850处形成导电过孔并在852处连接到一个或多个天线。然后可以在854处完成该封装。
图9图示出根据本发明的一个实施方式的计算设备900。计算设备900容纳系统板902。板902可包括许多部件，包括但不限于处理器904和至少一个通信封装906。通信封装被耦合到一个或多个天线916。处理器904被物理且电耦合到板902。将至少一个天线916与通信封装906集成并通过封装而物理且电耦合到板902。在本发明的某些实施方式中，如上所述使用通过硅过孔而在管芯上形成部件、控制器、集线器或接口中的任何一个或多个。
封装管芯906、924、926可使用如所述的陶瓷基板而连接到在封装内或在封装堆中的天线916。框图的天线916表示这些类型的天线位置和连接中的每一个。其还表示可被设备所使用的所有不同类型的天线和天线阵列。
根据其应用，计算设备900可包括其它部件，其可被或可不被物理且电耦合到板902。这些其它部件包括但不限于易失性存储器（例如，DRAM）908、非易失性存储器（例如，ROM）909、闪速存储器（未示出）、图像处理器912、数字信号处理器（未示出）、密码处理器（未示出）、芯片组914、天线916、诸如触摸屏显示器之类的显示器918、触摸屏控制器920、电池组922、音频编解码器（未示出）、视频编解码器（未示出）、功率放大器924、全球定位系统（GPS）设备926、指南针928、加速度计（未示出）、陀螺仪（未示出）、扬声器930、照相机932以及大容量存储器件（诸如硬盘驱动器）910、紧凑式磁盘（CD）（未示出）、数字多功能磁盘（DVD）（未示出）等）。可将这些部件连接到系统板902、安装到系统板或与任何其它部件组合。
通信封装906使得能够实现用于向和从计算设备900传输数据的无线和/或有线通信。术语“无线”及其派生词可用来描述可通过使用通过非固体介质的已调制电磁辐射来传送数据的电路、设备、系统、方法、技术、通信信道等。该术语并不意味着关联设备不包含任何导线，不过在某些实施例中它们可能没有。通信封装906可实现许多无线或有线标准或协议中的任何一个，包括但不限于Wi-Fi（IEEE 802.11系列）、WiMAX（IEEE 802.16系列）、IEEE802.20、长期演进（LTE）、Ev-DO、HSPA+、HSDPA+、HSUPA+、EDGE、GSM、GPRS、CDMA、TDMA、DECT、蓝牙、其以太网衍生物以及被指定为3G、4G、5G及以外的任何其它无线和有线协议。计算设备900可包括多个通信封装906。例如，第一通信封装906可专用于诸如Wi-Fi和蓝牙之类的近程无线通信，并且第二通信封装906可专用于远程无线通信，诸如GPS、EDGE、GPRS、CDMA、WiMAX、LTE、Ev-DO及其它。
计算设备900的处理器904包括封装在处理器904内的集成电路管芯。术语“处理器”可以指的是处理来自寄存器和/或存储器的电子数据以将该电子数据变换成可存储在寄存器和/或存储器中的其它电子数据的任何设备或设备的一部分。
在各种实施方式中，计算设备900可以是膝上型计算机、上网本、笔记本、超级本、智能电话、平板、个人数字助理（PDA）、超级移动PC、移动电话、台式计算机、服务器、打印机、扫描仪、监视器、机顶盒、娱乐控制单元、数字照相机、便携式音乐播放器或数字视频录像机。在进一步的实施方式中，计算设备900可以是处理数据的任何其它电子设备。
可将实施例实现为一个或多个存储器芯片、控制器、CPU（中央处理单元）、使用母板互连的微芯片或集成电路、专用集成电路（ASIC）和/或现场可编程门阵列（FPGA）的一部分。
对“一个实施例”、“实施例”、“示例性实施例”、“各种实施例”等的参考指示如此描述的本发明的一个或多个实施例可包括特定特征、结构或特性，但并非每个实施例都必须包括所述特定特征、结构或特性。此外，某些实施例可具有针对其它实施例所描述的特征中的某些、全部或没有一个。
在以下描述和权利要求中，可使用术语“耦合”以及其派生词。使用“耦合”来指示两个或更多元件相互合作和相交互，但是它们在其之间可具有或可不具有中间物理或电部件。
除非另外指明，如在权利要求中所使用的，描述公共元件的序数形容词“第一”、“第二”、“第三”等的使用仅仅指示正在提及的类似元件的不同实例，而并不意图暗指如此描述的元件必须在时间上、空间上、在排序中或以任何其它方式处于给定序列中。
附图和先前描述给出了实施例的示例。本领域的技术人员将认识到可将所述元件中的一个或多个很好地组合成单个功能元件。替换地，可将某些元件分离成多个功能元件。可将来自一个实施例的元件添加到另一实施例。例如，可改变本文所述的过程的顺序且其不限于本文所述的方式。此外，不需要按照所示的顺序来实现任何流程图的动作；也不一定需要执行所有动作。并且，可与其它动作并行地执行并不取决于其它动作的那些动作。实施例的范围绝不受到这些特定示例的限制。无论是否在说明书中明确地给出，可能有许多变化，诸如结构、尺寸以及材料使用方面的差异。实施例的范围至少如由以下权利要求给出的一样宽泛。
以下示例有关于其它实施例。可将不同实施例的各种特征不同地与包括的某些特征和未包括的其它特征组合以适应多种不同应用。某些实施例有关于具有管芯、管芯上面的陶瓷基板、被附着于陶瓷基板的天线以及将天线电连接到管芯的导电引线的封装。在某些实施例中，在陶瓷基板的表面上形成天线。在某些实施例中，陶瓷基板具有面对管芯的第一面和与管芯相对的第二面且在第二面上形成天线。
在某些实施例中，在陶瓷基板内形成天线。某些实施例包括在管芯上面的模具化合物且导线引线包括从天线到管芯的通模具过孔。在某些实施例中，模具化合物在陶瓷基板上。
某些实施例包括在管芯与天线之间的导电屏蔽。在某些实施例中，屏蔽在管芯与陶瓷基板之间。在某些实施例中，屏蔽被附着于陶瓷基板。在某些实施例中，通过过孔将屏蔽接地至外部连接。
某些实施例包括封装基板，其中，导电引线的至少一部分被耦合到封装基板。在某些实施例中，导电引线包括在封装基板中的敷设路径。某些实施例包括在陶瓷基板和管芯上面的模具化合物，并且封装基板包括在管芯的正面上面和模具化合物上面形成的重新分布层。
在某些实施例中，陶瓷基板具有面对管芯的第一面和与管芯相对的第二面且在第二面上形成天线，在第一面上形成屏蔽以将天线与管芯隔离，并在第一面与第二面之间的第三面上形成导电迹线以将天线电连接到接近于第一面的导电引线。
某些实施例包括在管芯与陶瓷基板之间的在管芯上面的封装盖，其中，陶瓷基板具有被耦合到天线的导电焊盘，其中，所述陶瓷基板被使用焊盘上面的焊球而附着于封装盖，并且其中，导电引线包括焊盘和焊球。
在某些实施例中，封装盖包括具有到第二管芯的连接的重新分布层。在某些实施例中，导电引线包括焊料填充过孔。
某些实施例有关于具有处理器、用户接口以及封装中的通信芯片的计算系统。封装具有管芯、管芯上面的陶瓷基板、被附着于陶瓷基板的天线、陶瓷基板和管芯上面的模具化合物、在管芯的正面上和模具化合物上面形成的重新分布层和将天线电连接到重新分布层的导电引线。某些实施例包括在陶瓷基板上面的导电路径以将在基板的一侧上的天线连接到被连接至基板的相对侧的过孔。
某些实施例有关于具有将天线附着于陶瓷基板、将陶瓷基板附着于管芯、在管芯上面形成盖、在盖和管芯上面形成重新分布层以及通过重新分布层将天线电连接到管芯的方法。在某些实施例中，附着天线包括在陶瓷基板的表面上沉积导电线。

Claims (20)

1.一种具有陶瓷天线基板的封装，包括：
管芯；
管芯上面的陶瓷基板；
天线，被附着于陶瓷基板；以及
导电引线，将天线电连接到管芯，
还包括在管芯与陶瓷基板之间的在管芯上面的封装盖，其中，陶瓷基板具有被耦合到天线的导电焊盘，其中，所述陶瓷基板被使用焊盘上面的焊球而附着于封装盖，并且其中，导电引线包括焊盘和焊球。
2.如权利要求1所述的封装，其中，在陶瓷基板的表面上形成天线。
3.如权利要求2所述的封装，其中，陶瓷基板具有面对管芯的第一面和与管芯相对的第二面，并且其中，在第二面上形成天线。
4.如权利要求1所述的封装，其中，在陶瓷基板内形成天线。
5.如权利要求1所述的封装，还包括管芯上的模具化合物，并且其中，导线引线包括从天线到管芯的通模具过孔。
6.如权利要求5所述的封装，其中，模具化合物在陶瓷基板上面。
7.如权利要求1所述的封装，还包括在管芯与天线之间的导电屏蔽。
8.如权利要求7所述的封装，其中，所述屏蔽在管芯与陶瓷基板之间。
9.如权利要求8所述的封装，其中，所述屏蔽被附着于陶瓷基板。
10.如权利要求8所述的封装，其中，通过过孔将屏蔽接地至外部连接。
11.如权利要求1所述的封装，还包括封装基板，其中，导电引线的至少一部分被耦合到封装基板。
12.如权利要求11所述的封装，其中，导电引线包括封装基板中的敷设路径。
13.如权利要求11所述的封装，还包括在陶瓷基板和管芯上的模具化合物，并且其中，该封装基板包括在管芯的正面上和模具化合物上面形成的重新分布层。
14.如权利要求1所述的封装，其中，陶瓷基板具有面对管芯的第一面和与管芯相对的第二面，并且其中，在第二面上形成天线，在第一面上形成屏蔽以将天线与管芯隔离，并在第一面与第二面之间的第三面上形成导电迹线以将天线电连接到接近于第一面的导电引线。
15.如权利要求1所述的封装，其中，封装盖包括具有到第二管芯的连接的重新分布层。
16.如权利要求1所述的封装，其中，所述导电引线包括焊料填充过孔。
17.一种包括具有陶瓷天线基板的封装的计算系统，包括：
处理器；
用户接口；以及
封装中的通信芯片，该封装具有管芯、管芯上面的陶瓷基板、被附着于陶瓷基板的天线、陶瓷基板和管芯上面的模具化合物、在管芯的正面上和模具化合物上面形成的重新分布层和将天线电连接到重新分布层的导电引线，所述封装还包括在管芯与陶瓷基板之间的在管芯上面的封装盖，其中，陶瓷基板具有被耦合到天线的导电焊盘，其中，所述陶瓷基板被使用焊盘上面的焊球而附着于封装盖，并且其中，导电引线包括焊盘和焊球。
18.如权利要求17所述的计算系统，还包括在陶瓷基板上面的导电路径以将在基板的一侧上的天线连接到被连接至基板的相对侧的过孔。
19.一种用于形成具有陶瓷天线基板的封装的方法，包括：
将天线附着于陶瓷基板；
将陶瓷基板附着于管芯；
在管芯上面形成盖；
在盖和管芯上面形成重新分布层；以及
通过重新分布层将天线电连接到管芯。
20.如权利要求19所述的方法，其中，附着天线包括在陶瓷基板的表面上沉积导电线。
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