WO2012014527A1 - 高周波モジュールおよび通信装置 - Google Patents
高周波モジュールおよび通信装置 Download PDFInfo
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- WO2012014527A1 WO2012014527A1 PCT/JP2011/057643 JP2011057643W WO2012014527A1 WO 2012014527 A1 WO2012014527 A1 WO 2012014527A1 JP 2011057643 W JP2011057643 W JP 2011057643W WO 2012014527 A1 WO2012014527 A1 WO 2012014527A1
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- substrate
- antenna
- terminal
- semiconductor component
- baseband signal
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- 239000000758 substrate Substances 0.000 claims abstract description 149
- 239000004065 semiconductor Substances 0.000 claims abstract description 93
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- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- 239000010409 thin film Substances 0.000 description 1
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- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
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- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
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Definitions
- the present invention relates to a high-frequency module that transmits or receives a high-frequency signal using an antenna, and a communication device using the high-frequency module.
- Patent Document 1 discloses a configuration in which a filter circuit layer that filters high-frequency signals is provided on the inner layer side of the circuit board, and an antenna that transmits or receives high-frequency signals is provided on the surface side of the circuit board. .
- the filter and the antenna are formed on the circuit board. Therefore, the circuit board is formed using a material having excellent high frequency characteristics such as a ceramic material having a high dielectric constant. There is a need to. Thus, the material excellent in high frequency characteristics generally tends to be expensive.
- the high-frequency module disclosed in Patent Document 1 includes a portion that does not require a material having excellent high-frequency characteristics, such as a portion that supplies a DC voltage for driving a semiconductor component or a portion that processes a low-frequency signal. It is necessary to form the same using the same material, and there is a problem that the entire high-frequency module becomes expensive.
- the present invention has been made in view of the above-described problems of the prior art, and an object of the present invention is to provide a high-frequency module that can reduce a manufacturing cost by separating a high-frequency signal substrate from another signal substrate. It is to provide a communication device.
- a high-frequency module according to the present invention is connected to a substrate-side DC voltage terminal that outputs a DC voltage, a substrate-side baseband signal terminal that inputs or outputs a baseband signal, and an external circuit.
- the semiconductor component has a back surface side on the package substrate.
- the antenna is mounted face-up on the package substrate in an opposing state, and the element-side DC voltage terminal and the element-side baseband signal terminal are electrically connected to the substrate-side DC voltage terminal and the substrate-side baseband signal terminal, respectively.
- the substrate is flip-chip mounted on the surface side of the semiconductor component, and the antenna side high frequency signal terminal is electrically connected to the element side high frequency signal terminal provided on the surface side of the semiconductor component.
- the antenna substrate is provided separately from the package substrate having the substrate-side DC voltage terminal, the substrate-side baseband signal terminal, and the external connection terminal, only the antenna substrate through which the high-frequency signal propagates has excellent high-frequency characteristics. It may be formed by using a new material. For this reason, a package board
- substrate can be formed using an inexpensive resin material etc., and manufacturing cost can be reduced.
- the semiconductor component is mounted face-up on the package substrate and the antenna substrate is flip-chip mounted on the surface side of the semiconductor component, an electrical connection is made between the antenna-side high-frequency signal terminal and the element-side high-frequency signal terminal using a bump. Can be connected. For this reason, for example, compared with the case where the semiconductor component and the antenna substrate are electrically connected using wire bonding, the line length of the connection portion can be shortened. The length of the transmission line for high-frequency signals can be made as short as possible, and transmission loss of high-frequency signals and mixing of external noise can be suppressed.
- the element-side DC voltage terminal and element-side baseband signal terminal of the semiconductor component and the substrate-side DC voltage terminal and substrate-side baseband signal terminal of the package board are electrically connected using wire bonding. It is configured to do.
- the element-side DC voltage terminal and the element-side baseband signal terminal of the semiconductor component and the substrate-side DC voltage terminal and the substrate-side baseband signal terminal of the package board are electrically connected using wire bonding. . Therefore, even when the functional circuit unit, the element side DC voltage terminal, and the element side baseband signal terminal are arranged on the surface side of the semiconductor component, the element side DC voltage terminal and the element side baseband signal terminal are connected to the package substrate. While being able to connect easily to a board
- the semiconductor component is provided with a via extending from the front surface side where the functional circuit portion is provided toward the rear surface side, and the element-side DC voltage terminal and the element-side baseband signal terminal of the semiconductor component are Located on the back side of the semiconductor component and electrically connected to the functional circuit section through the via, and the element side DC voltage terminal and the element side baseband signal terminal of the semiconductor component, and the substrate side DC voltage of the package substrate
- the terminal and the substrate-side baseband signal terminal are configured to be electrically connected using bumps.
- the element-side DC voltage terminal and element-side baseband signal terminal of the semiconductor component and the substrate-side DC voltage terminal and substrate-side baseband signal terminal of the package board are electrically connected using bumps.
- the element-side DC voltage terminal and the element-side baseband signal terminal do not need to be arranged at a position different from the semiconductor component in the package substrate as in the case of connection using wire bonding, and the semiconductor in the package substrate. It can arrange
- the antenna substrate is provided with a passive circuit unit that is electrically connected between the antenna element and the antenna-side high-frequency signal terminal and processes a high-frequency signal.
- the antenna substrate is provided with a passive circuit portion that is electrically connected between the antenna element and the antenna-side high-frequency signal terminal and processes a high-frequency signal.
- a passive circuit portion that is electrically connected between the antenna element and the antenna-side high-frequency signal terminal and processes a high-frequency signal.
- a filter or the like is provided as the passive circuit portion.
- high frequency signals can be processed inside the antenna substrate.
- the antenna element is configured to transmit or receive a microwave band or a millimeter wave band high-frequency signal.
- the antenna element is configured to transmit or receive a microwave band or a millimeter band high frequency signal, so that a broadband high frequency signal is used as compared with a case where a lower frequency signal is used. Communication speed can be improved.
- the surface side of the package substrate is sealed with a resin material in a state of covering the semiconductor component.
- the surface side of the package substrate is sealed with a resin material while covering the semiconductor component.
- device side baseband signal terminal of a semiconductor component can be sealed.
- these connection portions can be sealed together. For this reason, it is possible to easily seal these connection portions in the manufacturing process.
- FIG. 3 is a cross-sectional view of the high-frequency module as seen from the direction of arrows III-III in FIG.
- FIG. 2nd Embodiment It is a top view which shows the high frequency module in FIG.
- FIG. 2nd Embodiment It is a top view which shows the high frequency module in FIG.
- FIG. 2nd Embodiment It is a top view which shows the high frequency module in FIG.
- FIG. 2nd Embodiment It is a top view which shows the high frequency module in FIG.
- FIG. is sectional drawing which looked at the high frequency module from the arrow VII-VII direction in FIG.
- FIG. It is a block diagram which shows the high frequency module in FIG.
- a high-frequency module 1 includes a package substrate 2, a semiconductor component 6, an antenna 14, and the like which will be described later. .
- the package substrate 2 is formed using, for example, a multilayer substrate in which a plurality of insulating layers are stacked, is formed in a substantially square shape using a dielectric material such as a resin material, and has a front surface 2A and a back surface 2B. .
- a mounting electrode 2C is provided on the surface 2A of the package substrate 2 as a mounting region for mounting the semiconductor component 6 on the center side of the package substrate 2, and the mounting electrode 2C is surrounded by the mounting electrode 2C.
- a plurality of substrate-side DC voltage terminals 3 and substrate-side baseband signal terminals 4 are provided.
- the substrate side DC voltage terminal 3 outputs, for example, a drive voltage Vcc as a DC voltage for driving the semiconductor component 6.
- the substrate-side baseband signal terminal 4 inputs or outputs baseband signals TS and RS composed of low frequency signals.
- the baseband signals TS and RS may be signals having a frequency lower than that of high frequency signals RFt and RFr described later, and may be, for example, primary modulated IF signals (intermediate frequency signals).
- the package substrate 2 is provided with a plurality of external connection terminals 5 located on the back surface 2B side. These external connection terminals 5 are electrically connected to the mounting electrode 2C, the substrate-side DC voltage terminal 3, and the substrate-side baseband signal terminal 4 through wiring patterns 2D and vias 2E provided inside the package substrate 2, respectively. It is connected. At this time, the wiring pattern 2D is formed by, for example, an electrode pattern disposed between insulating layers, and the via 2E is formed by providing a conductive metal film or the like in a small-diameter hole extending in the thickness direction.
- the external connection terminal 5 is for electrically connecting an external circuit to the circuit in the package substrate 2 and the semiconductor component 6.
- the semiconductor component 6 has a body portion 7 made of, for example, an insulating resin material and the like, and a functional circuit portion 8 that performs various functional processes, and is formed in, for example, a substantially rectangular shape, and has a front surface 6A and a back surface 6B.
- the functional circuit portion 8 of the semiconductor component 6 is configured by an IC chip or the like formed using a semiconductor material such as silicon, for example, and is disposed on the surface 6A side of the main body portion 7.
- the semiconductor component 6 is face-up mounted on the front surface 2A side of the package substrate 2 with the back surface 6B side bonded to the mounting electrode 2C of the package substrate 2 and the functional circuit portion 8 disposed on the opposite side of the package substrate 2. Has been.
- the functional circuit unit 8 includes a modulation circuit 8A that modulates the baseband signal TS and converts it into a high-frequency signal RFt, and a demodulation circuit 8B that demodulates the high-frequency signal RFr and converts it into the baseband signal RS. Is formed.
- the function circuit unit 8 is formed with a transmission / reception change-over switch 8C that selectively connects one of the modulation circuit 8A and the demodulation circuit 8B to an antenna 14 described later.
- the transmission / reception change-over switch 8C selectively switches between the transmission state and the reception state of the high-frequency module 1.
- a plurality of element-side DC voltage terminals 9 and element-side baseband signal terminals 10 that are located on the outer edge side and electrically connected to the functional circuit section 8 are provided on the surface 6A side of the main body section 7. Yes.
- the element-side DC voltage terminal 9 is supplied with a DC voltage (drive voltage Vcc or the like) for driving the functional circuit unit 8 of the semiconductor component 6 through the package substrate 2.
- the element-side baseband signal terminal 10 receives the baseband signal TS from the package substrate 2 in the transmission state, and outputs the baseband signal RS toward the package substrate 2 in the reception state.
- the element-side DC voltage terminal 9 and the element-side baseband signal terminal 10 of the semiconductor component 6 are electrically connected to the substrate-side DC voltage terminal 3 and the substrate-side baseband signal terminal 4 of the package substrate 2 using wire bonding 11. Connected.
- an element side high frequency signal terminal 12 and a ground terminal 13 are provided so as to be located closer to the center side (inner side) than the element side DC voltage terminal 9 and the element side baseband signal terminal 10. ing.
- the element-side high-frequency signal terminal 12 is disposed at a position facing an antenna 14 described later, and inputs or outputs high-frequency signals RFt and RFr with the antenna 14.
- the ground terminal 13 is connected to an external ground via the semiconductor component 6 or the like.
- the antenna 14 includes an antenna substrate 15 and an antenna element 16 provided on the antenna substrate 15 and made of, for example, an electrode pattern.
- the antenna 14 forms, for example, a patch antenna, and transmits or receives high-frequency signals RFt and RFr such as microwaves and millimeter waves from the antenna element 16 serving as a radiation conductor element.
- the antenna substrate 15 is formed in a substantially square shape using a dielectric material such as a ceramic material that can obtain a desired dielectric constant.
- An antenna element 16 is provided on the surface 15 ⁇ / b> A side of the antenna substrate 15.
- the antenna-side high-frequency signal terminal 17 is provided on the back surface 15B side of the antenna substrate 15, and a ground electrode 18 is provided in a state insulated from the antenna-side high-frequency signal terminal 17 at a position different from the antenna-side high-frequency signal terminal 17. It has been.
- the antenna-side high-frequency signal terminal 17 is connected to the antenna element 16 through a via 19 formed in the antenna substrate 15 through the thickness direction, and inputs or outputs high-frequency signals RFt and RFr.
- the antenna substrate 15 is flip-chip mounted on the surface 6A of the semiconductor component 6 with the antenna-side high-frequency signal terminal 17 and the element-side high-frequency signal terminal 12 facing each other. At this time, the antenna-side high-frequency signal terminal 17 and the element-side high-frequency signal terminal 12 are electrically connected using the bump 20, and the ground electrode 18 and the ground terminal 13 are also electrically connected using the bump 20. . These bumps 20 are attached in advance to the antenna-side high-frequency signal terminal 17 and the ground electrode 18 using, for example, a conductive metal material such as solder, and the element-side high-frequency signal terminals 12 and It is joined to the ground terminal 13.
- the high-frequency module 1 has the above-described configuration, and the operation thereof will be described next.
- the baseband signal TS is supplied to the semiconductor component 6 via the external connection terminal 5.
- the modulation circuit 8A of the semiconductor component 6 modulates the baseband signal TS to convert it to the high frequency signal RFt, and supplies the high frequency signal RFt to the antenna 14 via the transmission / reception changeover switch 8C to be directed to the external space. Radiate.
- the high frequency signal RFr received from the antenna 14 is input to the demodulation circuit 8B of the semiconductor component 6 via the transmission / reception changeover switch 8C.
- the demodulation circuit 8B demodulates the high frequency signal RFr and converts it to the baseband signal RS, and outputs it to an external circuit (not shown) via the external connection terminal 5.
- the antenna substrate 15 is provided separately from the package substrate 2 having the substrate-side DC voltage terminal 3, the substrate-side baseband signal terminal 4, and the external connection terminal 5.
- the high-frequency signals RFt and RFr propagate only through the antenna substrate 15 and the semiconductor component 6 and do not propagate through the package substrate 2.
- only the antenna substrate 15 on which the high-frequency signals RFt and RFr are propagated may be formed using a material having excellent high-frequency characteristics, and the package substrate 2 can be formed using an inexpensive resin material. The manufacturing cost of the module 1 can be reduced.
- the semiconductor component 6 is mounted face-up on the package substrate 2 and the antenna substrate 15 is flip-chip mounted on the surface 6A side of the semiconductor component 6, for example, wire bonding between the semiconductor component 6 and the antenna substrate 15 is performed.
- the line length of a connection part can be shortened.
- the length of the transmission line of the high-frequency signals RFt and RFr can be made as short as possible between the semiconductor component 6 and the antenna substrate 15, and transmission loss of the high-frequency signals RFt and RFr and mixing of external noise are suppressed. be able to.
- the package substrate 2 is made smaller in area than the case where the antenna substrate 15 and the semiconductor component 6 are separately mounted on the package substrate 2.
- the whole high frequency module 1 can be reduced in size.
- the element-side DC voltage terminal 9 and the element-side baseband signal terminal 10 of the semiconductor component 6 and the substrate-side DC voltage terminal 3 and the substrate-side baseband signal terminal 4 of the package substrate 2 are electrically connected using wire bonding 11. Connected to. Therefore, even when the functional circuit unit 8, the element side DC voltage terminal 9, and the element side baseband signal terminal 10 are arranged on the surface 6A side of the semiconductor component 6, these element side DC voltage terminal 9 and element side baseband are arranged.
- the signal terminal 10 can be easily connected to the substrate-side DC voltage terminal 3 and the substrate-side baseband signal terminal 4 of the package substrate 2, and the connection state of each terminal 3, 4, 9, 10 can be easily visually confirmed. be able to.
- the antenna element 16 is configured to transmit or receive the high frequency signals RFt and RFr in the microwave band or the millimeter wave band, the broadband high frequency signal RFt, RFt, compared to the case where a signal having a frequency lower than these is used.
- RFr can be used, and the communication speed can be improved.
- FIGS. 5 to 7 show a second embodiment of the present invention.
- the feature of this embodiment is that the element side DC voltage terminal and element side baseband signal terminal of the semiconductor component, and the substrate of the package substrate
- the side DC voltage terminal and the substrate side baseband signal terminal are configured to be electrically connected using bumps.
- the same components as those in the first embodiment are denoted by the same reference numerals, and the description thereof is omitted.
- the high frequency module 21 includes a package substrate 22, a semiconductor component 26, and an antenna 14 in substantially the same manner as the high frequency module 1 according to the first embodiment.
- the package substrate 22 is formed in a substantially quadrangular shape using a multilayer substrate or the like in substantially the same manner as the package substrate 2 according to the first embodiment, and has a front surface 22A and a back surface 22B.
- a mounting electrode 22C is provided on the surface 22A of the package substrate 22 so as to be positioned at the center thereof, and a plurality of substrate side DC voltage terminals 23 and a substrate are surrounded by the mounting electrode 22C around the mounting electrode 22C.
- a side baseband signal terminal 24 is provided. At this time, the substrate-side DC voltage terminal 23 and the substrate-side baseband signal terminal 24 are arranged at positions facing the semiconductor component 26 and are configured to be covered by the semiconductor component 26 when the semiconductor component 26 is mounted. .
- the package substrate 22 is provided with a plurality of external connection terminals 25 located on the back surface 22B side. These external connection terminals 25 are electrically connected to the mounting electrode 22C, the substrate-side DC voltage terminal 23, and the substrate-side baseband signal terminal 24 through wiring patterns 22D and vias 22E provided inside the package substrate 22. Yes.
- the semiconductor component 26 is configured in substantially the same manner as the semiconductor component 6 according to the first embodiment, includes a main body portion 27 and a functional circuit portion 28, and has a front surface 26A and a back surface 26B.
- a plurality of element-side DC voltage terminals 29 and element-side baseband signal terminals 30 are provided on the outer surface side on the back surface 26 ⁇ / b> B side of the main body 27.
- a through via 31 penetrating in the thickness direction is formed in the main body portion 27 as a via.
- the element-side DC voltage terminal 29 and the element-side baseband signal terminal 30 are electrically connected to the functional circuit section 28 provided on the surface 26 ⁇ / b> A side of the main body section 27 through the through via 31.
- the element side DC voltage terminal 29 and the element side baseband signal terminal 30 of the semiconductor component 26 are disposed at positions facing the substrate side DC voltage terminal 23 and the substrate side baseband signal terminal 24 of the package substrate 22.
- the element-side DC voltage terminal 29 and the element-side baseband signal terminal 30 of the semiconductor component 26 are bumps made of conductive metal with respect to the substrate-side DC voltage terminal 23 and the substrate-side baseband signal terminal 24 of the package substrate 22. 32 is electrically connected.
- a bonding electrode 33 is provided on the back surface 26B side of the semiconductor component 26 so as to be located on the center side and opposed to the mounting electrode 22C of the package substrate 22.
- the bonding electrode 33 and the mounting electrode 22 ⁇ / b> C are bonded using bumps 34.
- the semiconductor component 26 is flip-chip mounted on the surface 22A of the package substrate 22.
- an element-side high-frequency signal terminal 35 and a ground terminal 36 are provided on the surface 26A side of the main body 27 at a position facing the antenna 14.
- the antenna substrate 15 is flip-chip mounted on the surface 26A side of the main body 27.
- the antenna-side high-frequency signal terminal 17 and the element-side high-frequency signal terminal 35 are electrically connected using the bump 37, and the ground electrode 18 and the ground terminal 36 are also electrically connected using the bump 37. .
- the high-frequency module 21 can obtain substantially the same operational effects as those of the first embodiment.
- the element-side DC voltage terminal 29 and the element-side baseband signal terminal 30 of the semiconductor component 26 and the substrate-side DC voltage terminal 23 and the substrate-side baseband signal terminal 24 of the package substrate 22 are bumps 32.
- the element-side DC voltage terminal 29 and the element-side baseband signal terminal 30 do not have to be arranged at a position different from the semiconductor component 26 in the package substrate 22 as in the case of connection using wire bonding.
- the substrate 22 can be disposed at a position facing the semiconductor component 26. As a result, the package substrate 22 and the entire high-frequency module 21 can be reduced in size.
- FIGS. 8 and 9 show a third embodiment of the present invention.
- the feature of this embodiment is that the antenna substrate is electrically connected between the antenna element and the antenna-side high-frequency signal terminal.
- the filter is provided.
- the same components as those in the first embodiment are denoted by the same reference numerals, and the description thereof is omitted.
- the high-frequency module 41 includes a package substrate 2, a semiconductor component 6, and an antenna 42, almost the same as the high-frequency module 1 according to the first embodiment.
- the antenna 42 includes an antenna substrate 43 and an antenna element 44 made of, for example, an electrode pattern or the like provided on the antenna substrate 43 in substantially the same manner as the antenna 14 according to the first embodiment.
- An antenna element 44 is provided on the surface 43 ⁇ / b> A side of the antenna substrate 43.
- an antenna-side high-frequency signal terminal 45 and a ground electrode 46 are provided on the back surface 43B side of the antenna substrate 43.
- the antenna substrate 43 is formed of a multilayer substrate in which insulating layers made of a dielectric material are stacked.
- a filter 47 as a passive circuit unit is provided inside the antenna substrate 43.
- the filter 47 is formed of, for example, an electrode pattern formed by forming a conductive metal thin film, and constitutes a band-pass filter that allows high-frequency signals RFt and RFr to pass therethrough and blocks other signals according to the shape.
- the filter 47 is connected to the antenna element 44 and the antenna-side high-frequency signal terminal 45 through the via 48.
- the filter 47 may be a diplexer in which the frequency band passing for transmission and reception is changed.
- the antenna substrate 43 is provided with two or more antenna-side high-frequency signal terminals 45 connected to a single antenna element 44, and a plurality of filters corresponding to these antenna-side high-frequency signal terminals 45. 47 may be provided.
- the antenna substrate 43 is flip-chip mounted on the surface 6A of the semiconductor component 6 with the antenna-side high-frequency signal terminal 45 and the element-side high-frequency signal terminal 12 facing each other. At this time, the antenna-side high-frequency signal terminal 45 and the element-side high-frequency signal terminal 12 are electrically connected using the bump 20, and the ground electrode 46 and the ground terminal 13 are also electrically connected using the bump 20. .
- the high-frequency module 41 according to the present embodiment configured as described above can obtain substantially the same operational effects as those of the first embodiment.
- the antenna substrate 43 is provided with the filter 47, the high-frequency signals RFt and RFr can be processed on the antenna substrate 43 side. For this reason, an unnecessary band signal can be removed without increasing the material cost.
- the filter 47 is provided inside the antenna substrate 43.
- the filter 47 may be provided on the front surface 43A side or the back surface 43B side of the antenna substrate 43, for example.
- the case of applying to the first embodiment has been described as an example.
- the third embodiment may be applied to the second embodiment.
- FIG. 10 shows a fourth embodiment of the present invention.
- the feature of the present embodiment is that the surface side of the package substrate is sealed with a resin material in a state where the semiconductor component is covered.
- the same components as those in the first embodiment are denoted by the same reference numerals, and the description thereof is omitted.
- the high-frequency module 51 includes a package substrate 2, a semiconductor component 6, and an antenna 14 in substantially the same manner as the high-frequency module 1 according to the first embodiment.
- a sealing member 52 made of an insulating resin material is provided on the surface 2A of the package substrate 2 so as to cover the semiconductor component 6. At this time, the sealing member 52 connects the substrate side DC voltage terminal 3 and the substrate side baseband signal terminal 4 of the package substrate 2 to the element side DC voltage terminal 9 and the element side baseband signal terminal 10 of the semiconductor component 6. The portion including the wire bonding 11 is sealed.
- the sealing member 52 includes a bump 20 at a connection portion between the element-side high-frequency signal terminal 12 and the ground terminal 13 of the semiconductor component 6 and the antenna-side high-frequency signal terminal 17 and the ground electrode 18 of the antenna substrate 15. It is sealed.
- the high-frequency module 51 can obtain substantially the same operational effects as those of the first embodiment.
- the front surface 2A side of the package substrate 2 is sealed with the sealing member 52 made of a resin material in a state where the semiconductor component 6 is covered.
- the sealing member 52 using the sealing member 52, the substrate side DC voltage terminal 3 and the substrate side baseband signal terminal 4 of the package substrate 2, the element side DC voltage terminal 9 and the element side baseband signal terminal 10 of the semiconductor component 6, and Can be sealed.
- the connection portion between the element side high frequency signal terminal 12 of the semiconductor component 6 and the antenna side high frequency signal terminal 17 of the antenna substrate 15 can be sealed together. For this reason, in a manufacturing process, these several connection parts can be easily sealed collectively, and a manufacturing process can be simplified compared with the case where it seals separately.
- the sealing member 52 is provided on the surface 2A of the planar package substrate 2.
- the present invention is not limited to this, and a frame body 62 that covers the outer edge side of the package substrate 2 is provided on the surface 2A of the package substrate 2 as in the high-frequency module 61 according to the modification shown in FIG.
- the sealing member 63 may be provided so as to cover the semiconductor component 6 disposed in the 62.
- the cavity can be formed by the frame body 62, the semiconductor component 6 and the antenna 14 disposed in the cavity are sealed by applying a sealing member 63 made of a resin material in the cavity. And the sealing process is facilitated.
- the fourth embodiment the case of applying to the first embodiment has been described as an example. However, the fourth embodiment may be applied to the second and third embodiments.
- FIG. 12 shows a fifth embodiment according to the present invention, and the feature of this embodiment is that a communication device is configured using a high-frequency module.
- the communication device 71 includes a terminal device 72 that inputs or outputs voice, data, and the like, a signal processing circuit 73 that is connected to the terminal device 72 and processes baseband signals TS and RS, and a third embodiment, for example.
- the high-frequency module 41 is provided.
- the signal processing circuit 73 is provided, for example, on a mother board (not shown), and a connection terminal provided on the mother board is connected to the external connection terminal 5 of the high frequency module 41. Thereby, the signal processing circuit 73 is electrically connected to the semiconductor component 6 of the high frequency module 41.
- the signal processing circuit 73 At the time of transmission, the signal processing circuit 73 generates a baseband signal TS based on the information input from the terminal device 72, and outputs the baseband signal TS to the modulation circuit 8A.
- the modulation circuit 8A converts the baseband signal TS into a high frequency signal RFt, and transmits the high frequency signal RFt from the antenna 42 through the transmission / reception changeover switch 8C and the like.
- the high-frequency signal RFr received from the antenna 42 is input to the demodulation circuit 8B of the semiconductor component 6 via the transmission / reception changeover switch 8C.
- the demodulation circuit 8B demodulates the high-frequency signal RFr and converts it to the baseband signal RS and outputs it to the external signal processing circuit 73 via the external connection terminal 5.
- the signal processing circuit 73 generates information such as sound and image from the baseband signal RS and outputs the information to the terminal device 72.
- the communication device 71 is configured using the high frequency module 41, the manufacturing cost of the entire communication device 71 can be suppressed. Further, since the small high-frequency module 41 can be used, it can be easily mounted on a small device such as a mobile phone.
- the high-frequency module 41 according to the third embodiment is used.
- the high-frequency modules 1, 21, 51, 61 according to the first, second, and fourth embodiments are used. It is good also as a structure to use.
- the package substrates 2 and 22 are configured to use a multilayer substrate having a plurality of insulating layers, but may be configured to use a single-layer dielectric substrate.
- the functional circuit units 8 and 28 of the semiconductor components 6 and 26 are provided with both the modulation circuit 8A and the demodulation circuit 8B, but may be provided with only one of them.
- the antenna substrates 15 and 43 are provided with the single antenna elements 16 and 44.
- the antenna substrates 15 and 43 are used for transmission and reception, respectively. It is good also as a structure to use.
- the semiconductor parts 6 and 26 are configured to have the single antennas 14 and 42 attached thereto.
- two antennas are attached to the semiconductor parts and these antennas are used for transmission and reception, respectively.
- a plurality of antennas may be attached to a semiconductor component, and each antenna element may use an independent channel or the same channel.
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Abstract
Description
2,22 パッケージ基板
2A,6A,15A,22A,26A,43A 表面
2B,6B,15B,22B,26B,43B 裏面
3,23 基板側直流電圧端子
4,24 基板側ベースバンド信号端子
6,26 半導体部品
8,28 機能回路部
9,29 素子側直流電圧端子
10,30 素子側ベースバンド信号端子
11 ワイヤボンディング
14,42 アンテナ
15,43 アンテナ基板
16,44 アンテナ素子
17,45 アンテナ側高周波信号端子
31 貫通ビア(ビア)
32 バンプ
52,63 封止部材
71 通信装置
Claims (7)
- 直流電圧を出力する基板側直流電圧端子と、ベースバンド信号を入力または出力する基板側ベースバンド信号端子と、外部の回路に接続するための外部接続端子とを有し、誘電体材料を用いて形成されたパッケージ基板と、
ベースバンド信号を変調して高周波信号に変換する機能と高周波信号を復調してベースバンド信号に変換する機能とのうち少なくともいずれか一方の機能をもった機能回路部を有し、駆動用の直流電圧が入力される素子側直流電圧端子と、ベースバンド信号を入力または出力する素子側ベースバンド信号端子と、前記機能回路部と同じ表面側に位置して高周波信号を入力または出力する素子側高周波信号端子とを有する半導体部品と、
表面側にアンテナ素子が設けられ、裏面側に高周波信号を入力または出力するアンテナ側高周波信号端子を有し、誘電体材料を用いて形成されたアンテナ基板とを備え、
前記半導体部品は、前記パッケージ基板に裏面側が対向した状態で前記パッケージ基板にフェースアップ実装されると共に、素子側直流電圧端子および素子側ベースバンド信号端子が基板側直流電圧端子および基板側ベースバンド信号端子にそれぞれ電気的に接続され、
前記アンテナ基板は、前記半導体部品の表面側にフリップチップ実装されると共に、アンテナ側高周波信号端子が前記半導体部品の表面側に設けられた素子側高周波信号端子に電気的に接続される構成としてなる高周波モジュール。 - 前記半導体部品の素子側直流電圧端子および素子側ベースバンド信号端子と、前記パッケージ基板の基板側直流電圧端子および基板側ベースバンド信号端子とは、ワイヤボンディングを用いて電気的に接続する構成としてなる請求項1に記載の高周波モジュール。
- 前記半導体部品には、前記機能回路部が設けられた表面側から裏面側に向けて延びるビアを設け、
前記半導体部品の素子側直流電圧端子および素子側ベースバンド信号端子は、前記半導体部品の裏面側に位置して、該ビアを通じて前記機能回路部に電気的に接続され、
前記半導体部品の素子側直流電圧端子および素子側ベースバンド信号端子と、前記パッケージ基板の基板側直流電圧端子および基板側ベースバンド信号端子とは、バンプを用いて電気的に接続する構成としてなる請求項1に記載の高周波モジュール。 - 前記アンテナ基板には、前記アンテナ素子とアンテナ側高周波信号端子との間に電気的に接続され高周波信号を処理する受動回路部を設ける構成としてなる請求項1ないし3のいずれかに記載の高周波モジュール。
- 前記アンテナ素子は、マイクロ波帯またはミリ波帯の高周波信号を送信または受信する構成としてなる請求項1ないし3のいずれかに記載の高周波モジュール。
- 前記パッケージ基板の表面側は、前記半導体部品を覆った状態で樹脂材料を用いて封止する構成としてなる請求項1ないし3のいずれかに記載の高周波モジュール。
- 前記請求項1ないし3のいずれかに記載の高周波モジュールを用いた通信装置。
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Also Published As
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CN103026487A (zh) | 2013-04-03 |
US8803315B2 (en) | 2014-08-12 |
US20140138804A1 (en) | 2014-05-22 |
JPWO2012014527A1 (ja) | 2013-09-12 |
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