CN104471925B - 半导体设备和传感系统 - Google Patents

半导体设备和传感系统 Download PDF

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Publication number
CN104471925B
CN104471925B CN201380027835.XA CN201380027835A CN104471925B CN 104471925 B CN104471925 B CN 104471925B CN 201380027835 A CN201380027835 A CN 201380027835A CN 104471925 B CN104471925 B CN 104471925B
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China
Prior art keywords
substrate
semiconductor device
processing
sensing
storage area
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Expired - Fee Related
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CN201380027835.XA
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English (en)
Chinese (zh)
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CN104471925A (zh
Inventor
G.阿萨亚马
A.夏尔马
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Sony Corp
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Sony Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/68—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to defects
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H10F39/1843—Infrared image sensors of the hybrid type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
CN201380027835.XA 2012-06-04 2013-05-31 半导体设备和传感系统 Expired - Fee Related CN104471925B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261655237P 2012-06-04 2012-06-04
US61/655,237 2012-06-04
PCT/JP2013/003440 WO2013183266A2 (en) 2012-06-04 2013-05-31 Semiconductor device and sensing system

Publications (2)

Publication Number Publication Date
CN104471925A CN104471925A (zh) 2015-03-25
CN104471925B true CN104471925B (zh) 2017-12-15

Family

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Family Applications (1)

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CN201380027835.XA Expired - Fee Related CN104471925B (zh) 2012-06-04 2013-05-31 半导体设备和传感系统

Country Status (7)

Country Link
US (1) US9607971B2 (enExample)
EP (1) EP2856750A2 (enExample)
JP (1) JP2015521390A (enExample)
KR (1) KR20150027061A (enExample)
CN (1) CN104471925B (enExample)
TW (1) TWI599015B (enExample)
WO (1) WO2013183266A2 (enExample)

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JP6724980B2 (ja) * 2016-03-29 2020-07-15 株式会社ニコン 撮像素子および撮像装置
JP6919154B2 (ja) * 2016-03-31 2021-08-18 ソニーグループ株式会社 固体撮像素子、撮像装置、および電子機器
JP6779825B2 (ja) * 2017-03-30 2020-11-04 キヤノン株式会社 半導体装置および機器
KR102275684B1 (ko) 2017-04-18 2021-07-13 삼성전자주식회사 반도체 패키지
JP7278209B2 (ja) * 2017-04-25 2023-05-19 ヌヴォトンテクノロジージャパン株式会社 固体撮像装置および撮像装置
KR102477352B1 (ko) * 2017-09-29 2022-12-15 삼성전자주식회사 반도체 패키지 및 이미지 센서
JP6708620B2 (ja) * 2017-12-15 2020-06-10 キヤノン株式会社 撮像素子及び撮像装置
JP7527755B2 (ja) * 2018-02-09 2024-08-05 キヤノン株式会社 光電変換装置および撮像システム
KR102598041B1 (ko) 2018-02-28 2023-11-07 삼성전자주식회사 이미지 센서 칩
KR102765858B1 (ko) 2019-02-08 2025-02-12 삼성전자주식회사 이미지 센서 장치
KR102661820B1 (ko) 2019-02-11 2024-05-02 삼성전자주식회사 이미지 센서 및 그것의 구동 방법
US10672101B1 (en) * 2019-03-04 2020-06-02 Omnivision Technologies, Inc. DRAM with simultaneous read and write for multiwafer image sensors
TW202127637A (zh) * 2019-11-19 2021-07-16 日商索尼半導體解決方案公司 受光元件、測距模組
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Also Published As

Publication number Publication date
CN104471925A (zh) 2015-03-25
KR20150027061A (ko) 2015-03-11
WO2013183266A2 (en) 2013-12-12
EP2856750A2 (en) 2015-04-08
TW201351607A (zh) 2013-12-16
US9607971B2 (en) 2017-03-28
US20130320197A1 (en) 2013-12-05
TWI599015B (zh) 2017-09-11
WO2013183266A3 (en) 2014-02-27
JP2015521390A (ja) 2015-07-27

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