TWI599015B - 半導體裝置及感測系統 - Google Patents

半導體裝置及感測系統 Download PDF

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Publication number
TWI599015B
TWI599015B TW102118830A TW102118830A TWI599015B TW I599015 B TWI599015 B TW I599015B TW 102118830 A TW102118830 A TW 102118830A TW 102118830 A TW102118830 A TW 102118830A TW I599015 B TWI599015 B TW I599015B
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TW
Taiwan
Prior art keywords
substrate
semiconductor device
signal
sensing
output
Prior art date
Application number
TW102118830A
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English (en)
Chinese (zh)
Other versions
TW201351607A (zh
Inventor
淺山豪
安普 夏馬
Original Assignee
新力股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 新力股份有限公司 filed Critical 新力股份有限公司
Publication of TW201351607A publication Critical patent/TW201351607A/zh
Application granted granted Critical
Publication of TWI599015B publication Critical patent/TWI599015B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/68—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to defects
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H10F39/1843—Infrared image sensors of the hybrid type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
TW102118830A 2012-06-04 2013-05-28 半導體裝置及感測系統 TWI599015B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201261655237P 2012-06-04 2012-06-04

Publications (2)

Publication Number Publication Date
TW201351607A TW201351607A (zh) 2013-12-16
TWI599015B true TWI599015B (zh) 2017-09-11

Family

ID=48614093

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102118830A TWI599015B (zh) 2012-06-04 2013-05-28 半導體裝置及感測系統

Country Status (7)

Country Link
US (1) US9607971B2 (enExample)
EP (1) EP2856750A2 (enExample)
JP (1) JP2015521390A (enExample)
KR (1) KR20150027061A (enExample)
CN (1) CN104471925B (enExample)
TW (1) TWI599015B (enExample)
WO (1) WO2013183266A2 (enExample)

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JP7278209B2 (ja) * 2017-04-25 2023-05-19 ヌヴォトンテクノロジージャパン株式会社 固体撮像装置および撮像装置
KR102477352B1 (ko) * 2017-09-29 2022-12-15 삼성전자주식회사 반도체 패키지 및 이미지 센서
JP6708620B2 (ja) * 2017-12-15 2020-06-10 キヤノン株式会社 撮像素子及び撮像装置
JP7527755B2 (ja) * 2018-02-09 2024-08-05 キヤノン株式会社 光電変換装置および撮像システム
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Also Published As

Publication number Publication date
CN104471925A (zh) 2015-03-25
KR20150027061A (ko) 2015-03-11
WO2013183266A2 (en) 2013-12-12
EP2856750A2 (en) 2015-04-08
TW201351607A (zh) 2013-12-16
US9607971B2 (en) 2017-03-28
US20130320197A1 (en) 2013-12-05
WO2013183266A3 (en) 2014-02-27
JP2015521390A (ja) 2015-07-27
CN104471925B (zh) 2017-12-15

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