CN103649830B - 光刻图案化过程和其中使用的抗蚀剂 - Google Patents

光刻图案化过程和其中使用的抗蚀剂 Download PDF

Info

Publication number
CN103649830B
CN103649830B CN201280033742.3A CN201280033742A CN103649830B CN 103649830 B CN103649830 B CN 103649830B CN 201280033742 A CN201280033742 A CN 201280033742A CN 103649830 B CN103649830 B CN 103649830B
Authority
CN
China
Prior art keywords
wavelength
film
silicon
range
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201280033742.3A
Other languages
English (en)
Chinese (zh)
Other versions
CN103649830A (zh
Inventor
S·伍伊斯特尔
A·亚库宁
V·克里夫特苏恩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Holding NV
Original Assignee
ASML Holding NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Holding NV filed Critical ASML Holding NV
Priority to CN201810445598.3A priority Critical patent/CN108594599B/zh
Publication of CN103649830A publication Critical patent/CN103649830A/zh
Application granted granted Critical
Publication of CN103649830B publication Critical patent/CN103649830B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F30/00—Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal
    • C08F30/04—Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal
    • C08F30/08—Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal containing silicon
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G03F7/0043—Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
CN201280033742.3A 2011-07-08 2012-05-30 光刻图案化过程和其中使用的抗蚀剂 Active CN103649830B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201810445598.3A CN108594599B (zh) 2011-07-08 2012-05-30 抗蚀剂材料、光刻图案化方法和氧化物的用途

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161505768P 2011-07-08 2011-07-08
US61/505,768 2011-07-08
PCT/EP2012/060133 WO2013007442A1 (en) 2011-07-08 2012-05-30 Lithographic patterning process and resists to use therein

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201810445598.3A Division CN108594599B (zh) 2011-07-08 2012-05-30 抗蚀剂材料、光刻图案化方法和氧化物的用途

Publications (2)

Publication Number Publication Date
CN103649830A CN103649830A (zh) 2014-03-19
CN103649830B true CN103649830B (zh) 2018-06-01

Family

ID=46208008

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201280033742.3A Active CN103649830B (zh) 2011-07-08 2012-05-30 光刻图案化过程和其中使用的抗蚀剂
CN201810445598.3A Active CN108594599B (zh) 2011-07-08 2012-05-30 抗蚀剂材料、光刻图案化方法和氧化物的用途

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201810445598.3A Active CN108594599B (zh) 2011-07-08 2012-05-30 抗蚀剂材料、光刻图案化方法和氧化物的用途

Country Status (7)

Country Link
US (1) US9261784B2 (https=)
EP (1) EP2729844B1 (https=)
JP (2) JP6236000B2 (https=)
KR (2) KR101909567B1 (https=)
CN (2) CN103649830B (https=)
TW (1) TWI631423B (https=)
WO (1) WO2013007442A1 (https=)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9354508B2 (en) 2013-03-12 2016-05-31 Applied Materials, Inc. Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
US9632411B2 (en) * 2013-03-14 2017-04-25 Applied Materials, Inc. Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor
US20140272684A1 (en) 2013-03-12 2014-09-18 Applied Materials, Inc. Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor
WO2015046327A1 (ja) * 2013-09-26 2015-04-02 独立行政法人物質・材料研究機構 高感度積層レジスト膜及びレジスト膜の感光度向上方法
TWI639179B (zh) 2014-01-31 2018-10-21 美商蘭姆研究公司 真空整合硬遮罩製程及設備
WO2015127353A1 (en) 2014-02-24 2015-08-27 Tokyo Electron Limited Metrology for measurement of photosensitizer concentration within photo-sensitized chemically-amplified resist
JP6524388B2 (ja) * 2014-02-24 2019-06-05 東京エレクトロン株式会社 光増感化学増幅レジストで酸ショットノイズとして複製されるｅｕｖショットノイズの軽減
TWI575566B (zh) * 2014-02-24 2017-03-21 東京威力科創股份有限公司 與光敏化化學放大光阻化學品及程序一起使用的方法及技術
US10020195B2 (en) 2014-02-25 2018-07-10 Tokyo Electron Limited Chemical amplification methods and techniques for developable bottom anti-reflective coatings and dyed implant resists
FR3023843B1 (fr) * 2014-07-21 2016-07-22 Michelin & Cie Polymere modifie le long de la chaine et son procede de synthese
KR102139060B1 (ko) * 2015-09-30 2020-07-29 후지필름 가부시키가이샤 레지스트 조성물과, 이를 이용한 레지스트막, 패턴 형성 방법 및 전자 디바이스의 제조 방법
US9996004B2 (en) * 2015-11-20 2018-06-12 Lam Research Corporation EUV photopatterning of vapor-deposited metal oxide-containing hardmasks
US10429745B2 (en) 2016-02-19 2019-10-01 Osaka University Photo-sensitized chemically amplified resist (PS-CAR) simulation
US10048594B2 (en) * 2016-02-19 2018-08-14 Tokyo Electron Limited Photo-sensitized chemically amplified resist (PS-CAR) model calibration
WO2017197279A1 (en) 2016-05-13 2017-11-16 Tokyo Electron Limited Critical dimension control by use of photo-sensitized chemicals or photo-sensitized chemically amplified resist
WO2017197288A1 (en) 2016-05-13 2017-11-16 Tokyo Electron Limited Critical dimension control by use of a photo agent
US10796912B2 (en) 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
KR102307977B1 (ko) 2018-07-31 2021-09-30 삼성에스디아이 주식회사 반도체 레지스트용 조성물 및 이를 이용한 패턴 형성 방법
US11092890B2 (en) 2018-07-31 2021-08-17 Samsung Sdi Co., Ltd. Semiconductor resist composition, and method of forming patterns using the composition
US11092889B2 (en) 2018-07-31 2021-08-17 Samsung Sdi Co., Ltd. Semiconductor resist composition, and method of forming patterns using the composition
CN113039486B (zh) 2018-11-14 2024-11-12 朗姆研究公司 可用于下一代光刻法中的硬掩模制作方法
US12211691B2 (en) 2018-12-20 2025-01-28 Lam Research Corporation Dry development of resists
WO2020176181A1 (en) * 2019-02-25 2020-09-03 Applied Materials, Inc. A film stack for lithography applications
TW202514246A (zh) 2019-03-18 2025-04-01 美商蘭姆研究公司 基板處理方法與設備
US12062538B2 (en) 2019-04-30 2024-08-13 Lam Research Corporation Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement
TWI837391B (zh) 2019-06-26 2024-04-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
EP3990983A4 (en) 2019-06-28 2023-07-26 Lam Research Corporation BAKING STRATEGIES TO INCREASE THE LITHOGRAPHIC PERFORMANCE OF A METAL CONTAINING RESIST
KR20250160237A (ko) 2019-06-28 2025-11-11 램 리써치 코포레이션 복수의 패터닝 복사-흡수 엘리먼트들 및/또는 수직 조성 경사를 갖는 포토레지스트
WO2021034567A1 (en) 2019-08-16 2021-02-25 Tokyo Electron Limited Method and process for stochastic driven defectivity healing
KR102446362B1 (ko) 2019-10-15 2022-09-21 삼성에스디아이 주식회사 반도체 포토 레지스트용 조성물 및 이를 이용한 패턴 형성 방법
WO2021089270A1 (en) * 2019-11-07 2021-05-14 Asml Netherlands B.V. Methods for improving uniformity in substrates in a lithographic process
SG11202108851RA (en) 2020-01-15 2021-09-29 Lam Res Corp Underlayer for photoresist adhesion and dose reduction
CN115244664A (zh) 2020-02-28 2022-10-25 朗姆研究公司 用于减少euv图案化缺陷的多层硬掩模
CN115362414A (zh) 2020-04-03 2022-11-18 朗姆研究公司 用于增强euv光刻性能的暴露前光致抗蚀剂固化
CN115702475A (zh) 2020-06-22 2023-02-14 朗姆研究公司 用于含金属光致抗蚀剂沉积的表面改性
US12159787B2 (en) * 2020-07-02 2024-12-03 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a semiconductor device and pattern formation method
US12222643B2 (en) 2020-07-02 2025-02-11 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a semiconductor device and pattern formation method
EP4078292A4 (en) 2020-07-07 2023-11-22 Lam Research Corporation Integrated dry processes for patterning radiation photoresist patterning
CN116134381A (zh) * 2020-07-17 2023-05-16 朗姆研究公司 含钽光致抗蚀剂
US20230107357A1 (en) 2020-11-13 2023-04-06 Lam Research Corporation Process tool for dry removal of photoresist
JP7681106B2 (ja) 2020-12-08 2025-05-21 ラム リサーチ コーポレーション 有機蒸気によるフォトレジストの現像
KR20230162611A (ko) * 2021-03-26 2023-11-28 제이에스알 가부시끼가이샤 반도체 기판의 제조 방법 및 레지스트 하층막 형성용 조성물
KR102725782B1 (ko) 2022-07-01 2024-11-05 램 리써치 코포레이션 에칭 정지 억제 (etch stop deterrence) 를 위한 금속 옥사이드 기반 포토레지스트의 순환적 현상
US12474640B2 (en) 2023-03-17 2025-11-18 Lam Research Corporation Integration of dry development and etch processes for EUV patterning in a single process chamber
JP7852072B2 (ja) 2023-07-27 2026-04-27 ラム リサーチ コーポレーション 金属含有フォトレジストのためのオールインワン乾式現像

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5352564A (en) * 1993-01-19 1994-10-04 Shin-Etsu Chemical Co., Ltd. Resist compositions
US20040241579A1 (en) * 2003-05-27 2004-12-02 Shin-Etsu Chemical Co., Ltd. Positive resist material and pattern formation method using the same
CN101374650A (zh) * 2006-01-30 2009-02-25 佳能株式会社 制备多层光记录介质的方法和压模以及制造该压模的方法

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5837980B2 (ja) 1975-12-30 1983-08-19 富士通株式会社 フオトエツチングホウホウ
JP2516207B2 (ja) * 1987-03-05 1996-07-24 株式会社日立製作所 放射線感応性材料
US5061599A (en) * 1986-06-11 1991-10-29 Hitachi, Ltd. Radiation sensitive materials
US5178989A (en) * 1989-07-21 1993-01-12 Board Of Regents, The University Of Texas System Pattern forming and transferring processes
DE69125634T2 (de) * 1990-01-30 1998-01-02 Wako Pure Chem Ind Ltd Chemisch verstärktes Photolack-Material
JPH0422957A (ja) * 1990-05-17 1992-01-27 Fujitsu Ltd 電離放射線感光材料とパターン形成方法
JPH04107562A (ja) * 1990-08-29 1992-04-09 Fujitsu Ltd 有機ケイ素重合体およびレジスト組成物
JPH05117392A (ja) * 1991-10-30 1993-05-14 Fujitsu Ltd 有機ケイ素重合体およびレジスト組成物
JP2953252B2 (ja) * 1993-01-19 1999-09-27 信越化学工業株式会社 レジスト材料
JPH0792683A (ja) * 1993-09-22 1995-04-07 Hitachi Ltd 放射線感光材料
US5534312A (en) * 1994-11-14 1996-07-09 Simon Fraser University Method for directly depositing metal containing patterned films
JP3180629B2 (ja) * 1994-12-09 2001-06-25 三菱マテリアル株式会社 金属酸化物薄膜パターン形成用組成物及びその製造方法、金属酸化物薄膜パターンの形成方法並びに電子部品及び光学部品の製造方法
FR2759360B1 (fr) * 1997-02-10 1999-03-05 Commissariat Energie Atomique Materiau polymerique inorganique a base d'oxyde de tantale notamment a indice de refraction eleve, mecaniquement resistant a l'abrasion, son procede de fabrication et materiau optique comprenant ce materiau
TW574629B (en) * 1997-02-28 2004-02-01 Shinetsu Chemical Co Polystyrene derivative chemically amplified positive resist compositions, and patterning method
US6331378B1 (en) 1998-02-25 2001-12-18 Matsushita Electric Industrial Co., Ltd. Pattern forming method
JP3299214B2 (ja) 1999-03-12 2002-07-08 松下電器産業株式会社 パターン形成材料及びパターン形成方法
JP2001051418A (ja) * 1999-08-05 2001-02-23 Canon Inc 感光性樹脂及び該感光性樹脂を用いたレジスト組成物、並びに該レジスト組成物を用いた半導体装置・露光用マスクの製造方法及び該方法により製造された半導体装置・露光用マスク
US6849305B2 (en) 2000-04-28 2005-02-01 Ekc Technology, Inc. Photolytic conversion process to form patterned amorphous film
KR20040030501A (ko) * 2001-02-05 2004-04-09 콴티스크립트 인코포레이티드 Ｘ-ｒａｙ/ｅｕｖ 투사 리소그래피에 의한 금속/반도체화합물 구조의 형성
US7008749B2 (en) * 2001-03-12 2006-03-07 The University Of North Carolina At Charlotte High resolution resists for next generation lithographies
JP2004519734A (ja) * 2001-04-04 2004-07-02 アーチ・スペシャルティ・ケミカルズ・インコーポレイテッド ケイ素含有アセタール保護ポリマーおよびそのフォトレジスト組成物
JP4055543B2 (ja) * 2002-02-22 2008-03-05 ソニー株式会社 レジスト材料及び微細加工方法
US7326514B2 (en) 2003-03-12 2008-02-05 Cornell Research Foundation, Inc. Organoelement resists for EUV lithography and methods of making the same
SG115693A1 (en) * 2003-05-21 2005-10-28 Asml Netherlands Bv Method for coating a substrate for euv lithography and substrate with photoresist layer
US20060024589A1 (en) * 2004-07-28 2006-02-02 Siegfried Schwarzl Passivation of multi-layer mirror for extreme ultraviolet lithography
JP4595688B2 (ja) 2005-06-10 2010-12-08 ソニー株式会社 レジスト材料の製造方法およびレジスト材料ならびに露光方法
JP2007086268A (ja) * 2005-09-21 2007-04-05 Toray Ind Inc 感光性シート
TW200736834A (en) * 2005-12-27 2007-10-01 Kansai Paint Co Ltd Active energy ray-curable resin composition and method for forming resist pattern
KR100787450B1 (ko) * 2006-06-20 2007-12-26 삼성에스디아이 주식회사 감광성 페이스트 조성물 이를 이용하여 제조된 플라즈마디스플레이 패널의 격벽 및 이를 포함하는 플라즈마디스플레이 패널
JP2008256838A (ja) * 2007-04-03 2008-10-23 Canon Inc レチクル及びレチクルの製造方法
US7914970B2 (en) * 2007-10-04 2011-03-29 International Business Machines Corporation Mixed lithography with dual resist and a single pattern transfer
JP5407941B2 (ja) * 2009-03-09 2014-02-05 信越化学工業株式会社 ポジ型レジスト材料並びにこれを用いたパターン形成方法
US20100255427A1 (en) * 2009-04-02 2010-10-07 Taiwan Semiconductor Manufacturing Company, Ltd. Conformal photo-sensitive layer and process
TWI474378B (zh) * 2009-06-26 2015-02-21 羅門哈斯電子材料有限公司 形成電子裝置的方法
JP5708522B2 (ja) * 2011-02-15 2015-04-30 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5352564A (en) * 1993-01-19 1994-10-04 Shin-Etsu Chemical Co., Ltd. Resist compositions
US20040241579A1 (en) * 2003-05-27 2004-12-02 Shin-Etsu Chemical Co., Ltd. Positive resist material and pattern formation method using the same
CN101374650A (zh) * 2006-01-30 2009-02-25 佳能株式会社 制备多层光记录介质的方法和压模以及制造该压模的方法

Also Published As

Publication number Publication date
TW201305736A (zh) 2013-02-01
JP6236000B2 (ja) 2017-11-22
CN103649830A (zh) 2014-03-19
CN108594599A (zh) 2018-09-28
KR20180099913A (ko) 2018-09-05
TWI631423B (zh) 2018-08-01
EP2729844A1 (en) 2014-05-14
EP2729844B1 (en) 2021-07-28
WO2013007442A1 (en) 2013-01-17
US9261784B2 (en) 2016-02-16
KR101909567B1 (ko) 2018-10-18
CN108594599B (zh) 2022-04-22
JP6637943B2 (ja) 2020-01-29
US20140212819A1 (en) 2014-07-31
JP2014521111A (ja) 2014-08-25
JP2018025823A (ja) 2018-02-15
KR20140047120A (ko) 2014-04-21
KR102009869B1 (ko) 2019-08-12

Similar Documents

Publication Publication Date Title
CN103649830B (zh) 光刻图案化过程和其中使用的抗蚀剂
TWI575566B (zh) 與光敏化化學放大光阻化學品及程序一起使用的方法及技術
JP5705103B2 (ja) パターン形成方法
TWI799820B (zh) 在光阻層中形成圖案的方法及半導體裝置的製造方法
De Simone et al. Progresses and challenges of EUV lithography materials
TWI504941B (zh) 多層鏡、微影裝置或輻射源及改良一多層鏡之強健度的方法
TW201122570A (en) Spectral purity filter, lithographic apparatus, method for manufacturing a spectral purity filter and method of manufacturing a device using lithographic apparatus
JP5715134B2 (ja) スペクトル純度フィルタ及びスペクトル純度フィルタの製造方法
US20120154779A1 (en) Spectral purity filter, lithographic apparatus, and method for manufacturing a spectral purity filter
TWI831108B (zh) 製造半導體裝置的方法
NL2007857A (en) Lithographic patterning process and resists to use therein.
Brainard et al. Photoresists for extreme ultraviolet lithography
KR20210099692A (ko) 포토레지스트 조성물, 이를 이용한 포토리소그래피 방법 및 이를 이용한 반도체 소자의 제조 방법
CN116224715A (zh) 光阻剂、半导体装置的制造方法及极紫外线微影术方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant