CN103426777B - 电子部件的制造方法和电子设备 - Google Patents

电子部件的制造方法和电子设备 Download PDF

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Publication number
CN103426777B
CN103426777B CN201310178449.2A CN201310178449A CN103426777B CN 103426777 B CN103426777 B CN 103426777B CN 201310178449 A CN201310178449 A CN 201310178449A CN 103426777 B CN103426777 B CN 103426777B
Authority
CN
China
Prior art keywords
groove
substrate
singualtion
base substrate
electronic component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201310178449.2A
Other languages
English (en)
Chinese (zh)
Other versions
CN103426777A (zh
Inventor
和田健嗣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of CN103426777A publication Critical patent/CN103426777A/zh
Application granted granted Critical
Publication of CN103426777B publication Critical patent/CN103426777B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
    • H03H9/1021—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device the BAW device being of the cantilever type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/15—Containers comprising an insulating or insulated base
    • H10W76/153—Containers comprising an insulating or insulated base having interconnections in passages through the insulating or insulated base
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/682—Shapes or dispositions thereof comprising holes having chips therein
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/253—Materials not comprising solid metals or solid metalloids, e.g. polymers or ceramics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
CN201310178449.2A 2012-05-18 2013-05-15 电子部件的制造方法和电子设备 Expired - Fee Related CN103426777B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012-114997 2012-05-18
JP2012114997A JP6024199B2 (ja) 2012-05-18 2012-05-18 電子部品の製造方法

Publications (2)

Publication Number Publication Date
CN103426777A CN103426777A (zh) 2013-12-04
CN103426777B true CN103426777B (zh) 2016-06-01

Family

ID=49580664

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310178449.2A Expired - Fee Related CN103426777B (zh) 2012-05-18 2013-05-15 电子部件的制造方法和电子设备

Country Status (3)

Country Link
US (1) US8921162B2 (enExample)
JP (1) JP6024199B2 (enExample)
CN (1) CN103426777B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10334725B1 (en) * 2014-04-10 2019-06-25 Richard A. Marasas, Jr. Adhesive based reconfigurable electronic circuit building system
JP6394055B2 (ja) * 2014-05-13 2018-09-26 日本電気硝子株式会社 セラミック−ガラス複合パッケージの製造方法及びセラミック−ガラス複合パッケージ
WO2020202943A1 (ja) 2019-03-29 2020-10-08 株式会社村田製作所 セラミック基板の製造方法及びセラミック基板
JP7173298B2 (ja) 2019-03-29 2022-11-16 株式会社村田製作所 セラミック基板の製造方法
CN110054144A (zh) * 2019-04-22 2019-07-26 武汉耐普登科技有限公司 微机电传感器封装结构及制造方法
JP7434724B2 (ja) * 2019-05-23 2024-02-21 セイコーエプソン株式会社 振動デバイス、電子機器および移動体
US12514127B2 (en) * 2021-01-25 2025-12-30 Seiko Epson Corporation Electronic device and method for manufacturing electronic device
WO2022246818A1 (zh) * 2021-05-28 2022-12-01 深圳顺络电子股份有限公司 磁性器件及其制备方法
CN116230556B (zh) * 2023-05-06 2023-08-29 芯盟科技有限公司 芯片载体、其形成方法、晶圆键合结构及其形成方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6444499B1 (en) * 2000-03-30 2002-09-03 Amkor Technology, Inc. Method for fabricating a snapable multi-package array substrate, snapable multi-package array and snapable packaged electronic components
US6627987B1 (en) * 2001-06-13 2003-09-30 Amkor Technology, Inc. Ceramic semiconductor package and method for fabricating the package
CN101783380A (zh) * 2009-01-15 2010-07-21 日月光半导体制造股份有限公司 制造发光二极管封装的方法以及其封装结构

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JPH0971488A (ja) * 1995-09-01 1997-03-18 Rohm Co Ltd セラミック基板の製造方法
JP2002016161A (ja) 2000-06-27 2002-01-18 Sumitomo Metal Electronics Devices Inc パッケ−ジ部品とその製造方法、及び該パッケ−ジ部品を用いたパッケ−ジの封止方法。
JP2002246491A (ja) 2001-02-21 2002-08-30 Nippon Carbide Ind Co Inc 電子部品用パッケージ及びその製造方法
JP2002352951A (ja) 2001-05-24 2002-12-06 Tohoku Pioneer Corp 有機ｅｌ表示パネル及びその製造方法
JP2003181825A (ja) 2001-12-19 2003-07-02 Sony Corp 基板分断方法及び有機ｅｌディスプレイの製造方法
JP4476075B2 (ja) 2004-08-26 2010-06-09 京セラ株式会社 多数個取り配線基板
KR100681264B1 (ko) * 2005-05-31 2007-02-09 전자부품연구원 전자소자 패키지 및 그의 제조 방법
JP2006351591A (ja) * 2005-06-13 2006-12-28 Sony Corp マイクロデバイスのパッケージング方法及びマイクロデバイス
JP2007158417A (ja) * 2005-11-30 2007-06-21 Kyocera Kinseki Corp 圧電デバイス、及びその製造方法
JP4859811B2 (ja) 2006-10-24 2012-01-25 京セラ株式会社 電子部品収納用パッケージ
JP4343962B2 (ja) * 2007-01-19 2009-10-14 Ｏｋｉセミコンダクタ株式会社 半導体装置の製造方法及び半導体装置
TWI387076B (zh) * 2008-04-24 2013-02-21 相豐科技股份有限公司 積體電路元件之封裝結構及其製造方法
US8735262B2 (en) * 2011-10-24 2014-05-27 Infineon Technologies Ag Semiconductor device having a through contact and a manufacturing method therefor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6444499B1 (en) * 2000-03-30 2002-09-03 Amkor Technology, Inc. Method for fabricating a snapable multi-package array substrate, snapable multi-package array and snapable packaged electronic components
US6627987B1 (en) * 2001-06-13 2003-09-30 Amkor Technology, Inc. Ceramic semiconductor package and method for fabricating the package
CN101783380A (zh) * 2009-01-15 2010-07-21 日月光半导体制造股份有限公司 制造发光二极管封装的方法以及其封装结构

Also Published As

Publication number Publication date
JP6024199B2 (ja) 2016-11-09
JP2013243221A (ja) 2013-12-05
US20130307124A1 (en) 2013-11-21
CN103426777A (zh) 2013-12-04
US8921162B2 (en) 2014-12-30

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Granted publication date: 20160601

Termination date: 20210515

CF01 Termination of patent right due to non-payment of annual fee