CN1033175C - 在大高宽比孔径中淀积导体的方法 - Google Patents

在大高宽比孔径中淀积导体的方法 Download PDF

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Publication number
CN1033175C
CN1033175C CN92101844A CN92101844A CN1033175C CN 1033175 C CN1033175 C CN 1033175C CN 92101844 A CN92101844 A CN 92101844A CN 92101844 A CN92101844 A CN 92101844A CN 1033175 C CN1033175 C CN 1033175C
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CN
China
Prior art keywords
layer
collimator
aspect ratio
substrate
conductive material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN92101844A
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English (en)
Chinese (zh)
Other versions
CN1065888A (zh
Inventor
派-英·P·李
托马斯·J·利卡泰
托马斯·L·麦克德维特
保罗·C·帕里斯
斯科特·L·彭宁顿
詹姆斯·G·瑞安
戴维·C·斯特里普
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
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International Business Machines Corp
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Publication date
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Publication of CN1065888A publication Critical patent/CN1065888A/zh
Application granted granted Critical
Publication of CN1033175C publication Critical patent/CN1033175C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C23C14/044—Coating on selected surface areas, e.g. using masks using masks using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient
    • H10D64/011—
    • H10W20/056—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
    • H05K3/4076—Through-connections; Vertical interconnect access [VIA] connections by thin-film techniques

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
CN92101844A 1991-04-19 1992-03-19 在大高宽比孔径中淀积导体的方法 Expired - Lifetime CN1033175C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US69017191A 1991-04-19 1991-04-19
US07/690,171 1991-04-19
US690,171 1991-04-19

Publications (2)

Publication Number Publication Date
CN1065888A CN1065888A (zh) 1992-11-04
CN1033175C true CN1033175C (zh) 1996-10-30

Family

ID=24771386

Family Applications (1)

Application Number Title Priority Date Filing Date
CN92101844A Expired - Lifetime CN1033175C (zh) 1991-04-19 1992-03-19 在大高宽比孔径中淀积导体的方法

Country Status (10)

Country Link
US (1) US5401675A (enExample)
EP (1) EP0509305A1 (enExample)
JP (1) JP2726595B2 (enExample)
KR (1) KR960011927B1 (enExample)
CN (1) CN1033175C (enExample)
BR (1) BR9201351A (enExample)
CA (1) CA2061119C (enExample)
MY (1) MY108408A (enExample)
SG (1) SG42979A1 (enExample)
TW (1) TW207029B (enExample)

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US5700716A (en) 1996-02-23 1997-12-23 Micron Technology, Inc. Method for forming low contact resistance contacts, vias, and plugs with diffusion barriers
US5895266A (en) * 1996-02-26 1999-04-20 Applied Materials, Inc. Titanium nitride barrier layers
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US6025269A (en) * 1996-10-15 2000-02-15 Micron Technology, Inc. Method for depositioning a substantially void-free aluminum film over a refractory metal nitride layer
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US6362097B1 (en) * 1998-07-14 2002-03-26 Applied Komatsu Technlology, Inc. Collimated sputtering of semiconductor and other films
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US6197684B1 (en) * 1999-03-19 2001-03-06 United Microelectronics Corp. Method for forming metal/metal nitride layer
US6342133B2 (en) 2000-03-14 2002-01-29 Novellus Systems, Inc. PVD deposition of titanium and titanium nitride layers in the same chamber without use of a collimator or a shutter
EP1350863B1 (de) * 2002-03-19 2006-08-09 Scheuten Glasgroep Vorrichtung und Verfahren zum gerichteten Aufbringen von Depositionsmaterial auf ein Substrat
KR100528069B1 (ko) * 2003-09-02 2005-11-15 동부아남반도체 주식회사 반도체 소자 및 그 제조 방법
KR100561523B1 (ko) * 2003-12-31 2006-03-16 동부아남반도체 주식회사 알루미늄 배선 형성 방법
KR100628242B1 (ko) * 2004-06-24 2006-09-26 동부일렉트로닉스 주식회사 반도체 소자의 베리어층 형성 방법
KR100602087B1 (ko) * 2004-07-09 2006-07-14 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조방법
KR100552857B1 (ko) * 2004-10-25 2006-02-22 동부아남반도체 주식회사 반도체 소자의 콘택 형성 방법
US8236691B2 (en) * 2008-12-31 2012-08-07 Micron Technology, Inc. Method of high aspect ratio plug fill
JP6088083B1 (ja) * 2016-03-14 2017-03-01 株式会社東芝 処理装置及びコリメータ
USD859333S1 (en) * 2018-03-16 2019-09-10 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
USD858468S1 (en) * 2018-03-16 2019-09-03 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
USD937329S1 (en) 2020-03-23 2021-11-30 Applied Materials, Inc. Sputter target for a physical vapor deposition chamber
USD998575S1 (en) 2020-04-07 2023-09-12 Applied Materials, Inc. Collimator for use in a physical vapor deposition (PVD) chamber
USD1009816S1 (en) 2021-08-29 2024-01-02 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
USD997111S1 (en) 2021-12-15 2023-08-29 Applied Materials, Inc. Collimator for use in a physical vapor deposition (PVD) chamber
USD1038901S1 (en) 2022-01-12 2024-08-13 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
USD1103950S1 (en) * 2024-03-21 2025-12-02 Applied Materials, Inc. Process chamber collimator

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FR2583220B1 (fr) * 1985-06-11 1987-08-07 Thomson Csf Procede de realisation d'au moins deux metallisations d'un composant semi-conducteur, recouvertes d'une couche de dielectrique et composant obtenu par ce dielectrique
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Also Published As

Publication number Publication date
KR960011927B1 (ko) 1996-09-04
EP0509305A1 (en) 1992-10-21
CA2061119C (en) 1998-02-03
CN1065888A (zh) 1992-11-04
JP2726595B2 (ja) 1998-03-11
TW207029B (enExample) 1993-06-01
KR920020613A (ko) 1992-11-21
SG42979A1 (en) 1997-10-17
US5401675A (en) 1995-03-28
MY108408A (en) 1996-09-30
CA2061119A1 (en) 1992-10-20
JPH05299375A (ja) 1993-11-12
BR9201351A (pt) 1992-12-01

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Legal Events

Date Code Title Description
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C06 Publication
PB01 Publication
C14 Grant of patent or utility model
GR01 Patent grant
C15 Extension of patent right duration from 15 to 20 years for appl. with date before 31.12.1992 and still valid on 11.12.2001 (patent law change 1993)
OR01 Other related matters
C17 Cessation of patent right
CX01 Expiry of patent term

Expiration termination date: 20120319

Granted publication date: 19961030