SG42979A1 - Method of deposition conductors in high aspect ratio apertures - Google Patents

Method of deposition conductors in high aspect ratio apertures

Info

Publication number
SG42979A1
SG42979A1 SG1996001715A SG1996001715A SG42979A1 SG 42979 A1 SG42979 A1 SG 42979A1 SG 1996001715 A SG1996001715 A SG 1996001715A SG 1996001715 A SG1996001715 A SG 1996001715A SG 42979 A1 SG42979 A1 SG 42979A1
Authority
SG
Singapore
Prior art keywords
aspect ratio
high aspect
ratio apertures
conductors
deposition
Prior art date
Application number
SG1996001715A
Other languages
English (en)
Inventor
Pei-Ing Paul Lee
Thomas John Licata
Thomas Leddy Mcdevitt
Paul Christian Parries
Scott Lewis Pennington
James Gardiner Ryan
David Craig Strippe
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of SG42979A1 publication Critical patent/SG42979A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C23C14/044—Coating on selected surface areas, e.g. using masks using masks using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient
    • H10D64/011—
    • H10W20/056—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
    • H05K3/4076—Through-connections; Vertical interconnect access [VIA] connections by thin-film techniques

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
SG1996001715A 1991-04-19 1992-03-31 Method of deposition conductors in high aspect ratio apertures SG42979A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US69017191A 1991-04-19 1991-04-19

Publications (1)

Publication Number Publication Date
SG42979A1 true SG42979A1 (en) 1997-10-17

Family

ID=24771386

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1996001715A SG42979A1 (en) 1991-04-19 1992-03-31 Method of deposition conductors in high aspect ratio apertures

Country Status (10)

Country Link
US (1) US5401675A (enExample)
EP (1) EP0509305A1 (enExample)
JP (1) JP2726595B2 (enExample)
KR (1) KR960011927B1 (enExample)
CN (1) CN1033175C (enExample)
BR (1) BR9201351A (enExample)
CA (1) CA2061119C (enExample)
MY (1) MY108408A (enExample)
SG (1) SG42979A1 (enExample)
TW (1) TW207029B (enExample)

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US5700716A (en) 1996-02-23 1997-12-23 Micron Technology, Inc. Method for forming low contact resistance contacts, vias, and plugs with diffusion barriers
US5895266A (en) * 1996-02-26 1999-04-20 Applied Materials, Inc. Titanium nitride barrier layers
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US5956612A (en) * 1996-08-09 1999-09-21 Micron Technology, Inc. Trench/hole fill processes for semiconductor fabrication
US6025269A (en) * 1996-10-15 2000-02-15 Micron Technology, Inc. Method for depositioning a substantially void-free aluminum film over a refractory metal nitride layer
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TW430900B (en) * 1997-09-08 2001-04-21 Siemens Ag Method for producing structures having a high aspect ratio
US6287436B1 (en) 1998-02-27 2001-09-11 Innovent, Inc. Brazed honeycomb collimator
US6362097B1 (en) * 1998-07-14 2002-03-26 Applied Komatsu Technlology, Inc. Collimated sputtering of semiconductor and other films
US6140217A (en) * 1998-07-16 2000-10-31 International Business Machines Corporation Technique for extending the limits of photolithography
US6197684B1 (en) * 1999-03-19 2001-03-06 United Microelectronics Corp. Method for forming metal/metal nitride layer
US6342133B2 (en) 2000-03-14 2002-01-29 Novellus Systems, Inc. PVD deposition of titanium and titanium nitride layers in the same chamber without use of a collimator or a shutter
EP1350863B1 (de) * 2002-03-19 2006-08-09 Scheuten Glasgroep Vorrichtung und Verfahren zum gerichteten Aufbringen von Depositionsmaterial auf ein Substrat
KR100528069B1 (ko) * 2003-09-02 2005-11-15 동부아남반도체 주식회사 반도체 소자 및 그 제조 방법
KR100561523B1 (ko) * 2003-12-31 2006-03-16 동부아남반도체 주식회사 알루미늄 배선 형성 방법
KR100628242B1 (ko) * 2004-06-24 2006-09-26 동부일렉트로닉스 주식회사 반도체 소자의 베리어층 형성 방법
KR100602087B1 (ko) * 2004-07-09 2006-07-14 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조방법
KR100552857B1 (ko) * 2004-10-25 2006-02-22 동부아남반도체 주식회사 반도체 소자의 콘택 형성 방법
US8236691B2 (en) * 2008-12-31 2012-08-07 Micron Technology, Inc. Method of high aspect ratio plug fill
JP6088083B1 (ja) * 2016-03-14 2017-03-01 株式会社東芝 処理装置及びコリメータ
USD859333S1 (en) * 2018-03-16 2019-09-10 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
USD858468S1 (en) * 2018-03-16 2019-09-03 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
USD937329S1 (en) 2020-03-23 2021-11-30 Applied Materials, Inc. Sputter target for a physical vapor deposition chamber
USD998575S1 (en) 2020-04-07 2023-09-12 Applied Materials, Inc. Collimator for use in a physical vapor deposition (PVD) chamber
USD1009816S1 (en) 2021-08-29 2024-01-02 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
USD997111S1 (en) 2021-12-15 2023-08-29 Applied Materials, Inc. Collimator for use in a physical vapor deposition (PVD) chamber
USD1038901S1 (en) 2022-01-12 2024-08-13 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
USD1103950S1 (en) * 2024-03-21 2025-12-02 Applied Materials, Inc. Process chamber collimator

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Also Published As

Publication number Publication date
KR960011927B1 (ko) 1996-09-04
EP0509305A1 (en) 1992-10-21
CA2061119C (en) 1998-02-03
CN1065888A (zh) 1992-11-04
JP2726595B2 (ja) 1998-03-11
TW207029B (enExample) 1993-06-01
KR920020613A (ko) 1992-11-21
US5401675A (en) 1995-03-28
MY108408A (en) 1996-09-30
CA2061119A1 (en) 1992-10-20
JPH05299375A (ja) 1993-11-12
CN1033175C (zh) 1996-10-30
BR9201351A (pt) 1992-12-01

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