JP2726595B2 - アスペクト比の高い開口に於ける導体の形成方法 - Google Patents

アスペクト比の高い開口に於ける導体の形成方法

Info

Publication number
JP2726595B2
JP2726595B2 JP4088645A JP8864592A JP2726595B2 JP 2726595 B2 JP2726595 B2 JP 2726595B2 JP 4088645 A JP4088645 A JP 4088645A JP 8864592 A JP8864592 A JP 8864592A JP 2726595 B2 JP2726595 B2 JP 2726595B2
Authority
JP
Japan
Prior art keywords
sputtering
collimator
aspect ratio
substrate
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP4088645A
Other languages
English (en)
Japanese (ja)
Other versions
JPH05299375A (ja
Inventor
ペイ−イン・ポール・リィ
トーマス・ジョン・リケイタ
トーマス・リィディ・マクデビッド
ポール・クリスチャン・パリス
スコット・ルイス・ペニングトン
ジェームス・ガードナー・ライアン
デビッド・クライグ・ストライプ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPH05299375A publication Critical patent/JPH05299375A/ja
Application granted granted Critical
Publication of JP2726595B2 publication Critical patent/JP2726595B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C23C14/044—Coating on selected surface areas, e.g. using masks using masks using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient
    • H10D64/011—
    • H10W20/056—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
    • H05K3/4076—Through-connections; Vertical interconnect access [VIA] connections by thin-film techniques

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP4088645A 1991-04-19 1992-04-09 アスペクト比の高い開口に於ける導体の形成方法 Expired - Lifetime JP2726595B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US69017191A 1991-04-19 1991-04-19
US690171 1992-04-19

Publications (2)

Publication Number Publication Date
JPH05299375A JPH05299375A (ja) 1993-11-12
JP2726595B2 true JP2726595B2 (ja) 1998-03-11

Family

ID=24771386

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4088645A Expired - Lifetime JP2726595B2 (ja) 1991-04-19 1992-04-09 アスペクト比の高い開口に於ける導体の形成方法

Country Status (10)

Country Link
US (1) US5401675A (enExample)
EP (1) EP0509305A1 (enExample)
JP (1) JP2726595B2 (enExample)
KR (1) KR960011927B1 (enExample)
CN (1) CN1033175C (enExample)
BR (1) BR9201351A (enExample)
CA (1) CA2061119C (enExample)
MY (1) MY108408A (enExample)
SG (1) SG42979A1 (enExample)
TW (1) TW207029B (enExample)

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EP0793268A3 (en) * 1995-05-23 1999-03-03 Texas Instruments Incorporated Process for filling a cavity in a semiconductor device
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US5700716A (en) 1996-02-23 1997-12-23 Micron Technology, Inc. Method for forming low contact resistance contacts, vias, and plugs with diffusion barriers
US5895266A (en) * 1996-02-26 1999-04-20 Applied Materials, Inc. Titanium nitride barrier layers
DE19621855C2 (de) 1996-05-31 2003-03-27 Univ Dresden Tech Verfahren zur Herstellung von Metallisierungen auf Halbleiterkörpern unter Verwendung eines gepulsten Vakuumbogenverdampfers
US5956612A (en) * 1996-08-09 1999-09-21 Micron Technology, Inc. Trench/hole fill processes for semiconductor fabrication
US6025269A (en) * 1996-10-15 2000-02-15 Micron Technology, Inc. Method for depositioning a substantially void-free aluminum film over a refractory metal nitride layer
US6045634A (en) * 1997-08-14 2000-04-04 Praxair S. T. Technology, Inc. High purity titanium sputtering target and method of making
TW430900B (en) * 1997-09-08 2001-04-21 Siemens Ag Method for producing structures having a high aspect ratio
US6287436B1 (en) 1998-02-27 2001-09-11 Innovent, Inc. Brazed honeycomb collimator
US6362097B1 (en) * 1998-07-14 2002-03-26 Applied Komatsu Technlology, Inc. Collimated sputtering of semiconductor and other films
US6140217A (en) * 1998-07-16 2000-10-31 International Business Machines Corporation Technique for extending the limits of photolithography
US6197684B1 (en) * 1999-03-19 2001-03-06 United Microelectronics Corp. Method for forming metal/metal nitride layer
US6342133B2 (en) 2000-03-14 2002-01-29 Novellus Systems, Inc. PVD deposition of titanium and titanium nitride layers in the same chamber without use of a collimator or a shutter
EP1350863B1 (de) * 2002-03-19 2006-08-09 Scheuten Glasgroep Vorrichtung und Verfahren zum gerichteten Aufbringen von Depositionsmaterial auf ein Substrat
KR100528069B1 (ko) * 2003-09-02 2005-11-15 동부아남반도체 주식회사 반도체 소자 및 그 제조 방법
KR100561523B1 (ko) * 2003-12-31 2006-03-16 동부아남반도체 주식회사 알루미늄 배선 형성 방법
KR100628242B1 (ko) * 2004-06-24 2006-09-26 동부일렉트로닉스 주식회사 반도체 소자의 베리어층 형성 방법
KR100602087B1 (ko) * 2004-07-09 2006-07-14 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조방법
KR100552857B1 (ko) * 2004-10-25 2006-02-22 동부아남반도체 주식회사 반도체 소자의 콘택 형성 방법
US8236691B2 (en) * 2008-12-31 2012-08-07 Micron Technology, Inc. Method of high aspect ratio plug fill
JP6088083B1 (ja) * 2016-03-14 2017-03-01 株式会社東芝 処理装置及びコリメータ
USD859333S1 (en) * 2018-03-16 2019-09-10 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
USD858468S1 (en) * 2018-03-16 2019-09-03 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
USD937329S1 (en) 2020-03-23 2021-11-30 Applied Materials, Inc. Sputter target for a physical vapor deposition chamber
USD998575S1 (en) 2020-04-07 2023-09-12 Applied Materials, Inc. Collimator for use in a physical vapor deposition (PVD) chamber
USD1009816S1 (en) 2021-08-29 2024-01-02 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
USD997111S1 (en) 2021-12-15 2023-08-29 Applied Materials, Inc. Collimator for use in a physical vapor deposition (PVD) chamber
USD1038901S1 (en) 2022-01-12 2024-08-13 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
USD1103950S1 (en) * 2024-03-21 2025-12-02 Applied Materials, Inc. Process chamber collimator

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CH611938A5 (enExample) * 1976-05-19 1979-06-29 Battelle Memorial Institute
DE2705225C2 (de) * 1976-06-07 1983-03-24 Nobuo Tokyo Nishida Ornamentteil für Uhren usw.
US4293374A (en) * 1980-03-10 1981-10-06 International Business Machines Corporation High aspect ratio, high resolution mask fabrication
KR900001825B1 (ko) * 1984-11-14 1990-03-24 가부시끼가이샤 히다찌세이사꾸쇼 성막 지향성을 고려한 스퍼터링장치
FR2583220B1 (fr) * 1985-06-11 1987-08-07 Thomson Csf Procede de realisation d'au moins deux metallisations d'un composant semi-conducteur, recouvertes d'une couche de dielectrique et composant obtenu par ce dielectrique
JPS627855A (ja) * 1985-07-05 1987-01-14 Hitachi Ltd スパツタリング装置
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JP2768364B2 (ja) * 1989-03-16 1998-06-25 富士通株式会社 半導体装置の製造方法
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Also Published As

Publication number Publication date
KR960011927B1 (ko) 1996-09-04
EP0509305A1 (en) 1992-10-21
CA2061119C (en) 1998-02-03
CN1065888A (zh) 1992-11-04
TW207029B (enExample) 1993-06-01
KR920020613A (ko) 1992-11-21
SG42979A1 (en) 1997-10-17
US5401675A (en) 1995-03-28
MY108408A (en) 1996-09-30
CA2061119A1 (en) 1992-10-20
JPH05299375A (ja) 1993-11-12
CN1033175C (zh) 1996-10-30
BR9201351A (pt) 1992-12-01

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