CN103278987A - 阵列基板、该阵列基板断线修复方法及显示装置 - Google Patents
阵列基板、该阵列基板断线修复方法及显示装置 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 19
- 230000008439 repair process Effects 0.000 title abstract description 18
- 239000000758 substrate Substances 0.000 title abstract description 10
- 239000010409 thin film Substances 0.000 claims abstract description 7
- 239000011159 matrix material Substances 0.000 claims abstract description 4
- 238000002955 isolation Methods 0.000 claims description 15
- 238000003466 welding Methods 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 9
- 238000005516 engineering process Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005056 compaction Methods 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明涉及液晶显示器件,尤其涉及一种阵列基板、该阵列基板的断线修复方法及显示装置,所述阵列基板包括公共电极、像素电极、薄膜晶体管、栅线和数据线,所述栅线和数据线交叉设置形成多个以矩阵形式排列的像素区域,所述公共电极在每个像素区域上方分别设有多个条形孔状结构的图案,所述栅线、数据线和公共电极制作在不同层上且相互部分重叠,所述公共电极在所述栅线和数据线交叉位置对应处均设有第一孔状结构的图案。本发明通过公共电极层的图案设计,可以方便、快速地对阵列基板上的数据线和栅线的断线问题进行修复,并使得对数据线断线的修复克服了条数限制,有效地提高了阵列基板的产品良率。
Description
技术领域
本发明涉及液晶显示器件,尤其涉及一种阵列基板、该阵列基板的断线修复方法及显示装置。
背景技术
在液晶显示面板的制造过程中,修复断线是提高良率的一个重要手段。现有技术中一般采用在液晶显示面板的四周布设数据修复线的结构,以方便栅线断线修复。
ADS型液晶面板(Advanced-Super Dimensional Switching;高级超维场开关技术)通过同一平面内像素电极或公共电极边缘所产生的平行电场以及像素电极与公共电极间产生的纵向电场形成多维电场,使液晶盒内像素电极或公共电极之间、像素电极或公共电极正上方所有取向液晶分子都能够产生旋转转换,从而提高了平面取向系液晶工作效率并增大了透光效率。ADS型液晶显示面板可以提高TFT-LCD画面品质,具有高透过率、宽视角、高开口率、低色差、低响应时间、无挤压水波纹(Push Mura)等优点。
为提高开口率,目前采用HADS(高开口率-高级超维场开关,High Aperture Ratio-ADS)技术,如图1或图2所示,HADS型阵列基板包括基板1、栅极2'、栅极绝缘层3、半导体层4、数据线5、像素电极6、保护层7和公共电极8。像素电极6和公共电极8均为透明导电层,且在栅线和数据线5上均覆盖有公共电极8。
在目前的阵列基板数据线断线修复方法中,多采取数据线5断线修复线9的方法修复,如图3所示,在数据线断线处13,利用激光焊接在数据线断线修复处焊接处31将此数据线5两侧与断线修复线9相交处连接,此时数据线5断线信号通过断线修复线9得到了正确的信号。但是采用该种方法修复阵列基板,由于断线修复线9的数量有限,因此对于所要修复数据线有条数限制,一般最多修复两条数据线的断线。而且,目前没有成熟的栅线的断线修复方法。如不能有效地修复阵列基板的断线,就会影响液晶显示产品的良率。
发明内容
(一)要解决的技术问题
本发明的目的是提供一种设有镂空结构的阵列基板,通过该镂空结构可对该阵列基板上的栅线和数据线断线进行有效修复,并且所述数据线的断线修复没有条数的限制。
(二)技术方案
本发明是通过以下技术方案实现的:一种阵列基板,包括公共电极、像素电极、薄膜晶体管、栅线和数据线,所述栅线和数据线交叉设置形成多个以矩阵形式排列的像素区域,所述公共电极在每个像素区域上方分别设有多个条形孔状结构的图案,所述栅线、数据线和公共电极制作在不同层上且相互部分重叠,所述公共电极在所述栅线和数据线交叉位置对应处均设有第一孔状结构的图案。
进一步,所述公共电极在薄膜晶体管正上方均设有第二孔状结构的图案,所述第二孔状结构对应设置在栅线的上方,且位于相邻两个第一孔状结构之间。
进一步的,所述公共电极为透明导电层。
本实施例提供一种上述的阵列基板的数据线断线修复的方法,包括以下步骤:
步骤F1找到所述数据线断线处,并且确定该数据线上方与所述数据线断线处相邻两个第一孔状结构区域之间的数据线为数据线断线节段;
步骤F2将位于数据线断线节段上方的公共电极沿该条数据线两侧切割至与该数据线断线节段相邻的两个第一孔状结构区域,从而使设置在数据线断线节段的正上方的公共电极与公共电极上的其他区域隔离,形成隔离的透明导电层区域;
步骤F3将隔离的透明导电层区域与所述数据线断线节段在所述数据线断线处的两端分别进行焊接,从而使该断裂的数据线通过所述隔离的透明导电层区域连通信号。
优选的,所述步骤F2中,应用激光切割方式对数据线断线节段上方的公共电极进行切割。
进一步,所述步骤F3中,应用激光焊接方式将隔离的透明导电层区域与数据线断线节段通过形成熔接点焊接在一起。
本实施例还提供一种如上所述的阵列基板的栅线断线修复的方法,包括以下步骤:
步骤S1找到所述栅线断线处,并且确定该栅线上方与所述栅线断线处邻近的第一孔状结构和第二孔状结构之间的栅线为栅线断线节段;
步骤S2将位于栅线断线节段上方的公共电极沿该条栅线两侧切割至与该栅线断线节段相邻的第一孔状结构区域和第二孔状结构区域,从而使设置在栅线断线节段的正上方的公共电极与该公共电极上的其他区域隔离,形成隔离的透明导电层区域;
步骤S3将隔离的透明导电层区域与所述栅线断线节段在所述栅线断线处的两端分别进行焊接,从而该断裂的栅线通过该隔离的透明导电层区域连通信号。
其中,所述S2步骤中,采用激光切割的方式将栅线断线节段上方的公共电极进行切割。
进一步,所述步骤S3中,应用激光焊接方式将隔离的透明导电层区域与栅线断线节段通过形成熔接点焊接在一起。
此外,本实施例还提供一种显示装置,包括如上所述的阵列基板。
(三)有益效果
与现有技术和产品相比,本发明有如下优点:
本发明通过在阵列基板的公共电极上设置镂空结构,方便、快速地对阵列基板上的数据线和栅线的断线进行修复,数据线断线的修复克服了条数限制,有效地提高了阵列基板的产品良率。
附图说明
图1是现有一种ADS型阵列基板的像素剖面结构图;
图2是现有另一种ADS型阵列基板的像素剖面结构图;
图3是现有阵列基板数据线断线修复后结构示意图;
图4是本发明的ADS型阵列基板的公共电极结构图;
图5是本发明的ADS型阵列基板数据线断线结构图;
图6是本发明的ADS型阵列基板的数据线断线修复后结构示意图;
图7是本发明的ADS型阵列基板栅线断线结构图;
图8是本发明的ADS型阵列基板栅线断线修复后结构示意图。
附图中,各标号所代表的组件列表如下:
1基板;2栅线;2'栅极;3栅极绝缘层;4半导体层;5数据线;6像素电极;7钝化层;8公共电极;8a条形孔状结构;9断线修复线;11第二孔状结构;11a薄膜晶体管;12第一孔状结构;13数据线断线处;14栅线断线处;21数据线断线修复切断处;22栅线断线修复切断处;31数据线断线修复焊接处;32栅线断线修复焊接处。
具体实施方式
下面结合附图对本发明的具体实施方式做一个详细的说明。
本实施例提供一种阵列基板,例如HADS型或ADS型液晶阵列基板,如图1、图4和图5所示,包括公共电极8、像素电极6,栅线2和数据线5,所述栅线2和数据线5上方均覆盖有公共电极8,所述栅线2和数据线5交叉设置形成多个以矩阵形式排列的像素区域,所述公共电极8在每个像素区域上方分别设有多个条形孔状结构8a的图案,所述栅线2、数据线5和公共电极8制作在不同层上且相互部分重叠,且该公共电极8在所述栅线2和数据线5交叉位置对应处均设有第一孔状结构12的图案。通过第一孔状结构12,可对所述阵列基板的数据线和栅线的断线进行修复,并且,数据线的断线修复不受条数限制。所述栅线2与栅极2′相互连接,且采用相同材料在同一层制作。
其中,所述公共电极8在薄膜晶体管11a正上方均设有第二孔状结构11的图案,所述第二孔状结构11对应设置在栅线2的上方,且位于相邻两个第一孔状结构12之间。
该阵列基板的公共电极为透明导电层,可采用透明金属氧化物层,如ITO或IZO材料等。
本实施例中提供的上述任意一种阵列基板的数据线断线修复的方法,包括以下步骤,
步骤F1找到所述数据断线处13,如图5所示,并且确定该数据线5上方与所述数据线断线处13相邻两个第一孔状结构12区域之间的数据线为数据线断线节段;
步骤F2如图6所示,将位于数据线断线节段上方的公共电极12沿该条数据线5两侧切割至与该数据线断线节段相邻的两个第一孔状结构12区域,即将数据线断线修复切断处21的公共电极切断,从而使设置在数据线断线节段的正上方的公共电极与公共电极上的其他区域隔离,形成隔离的透明导电层区域;
步骤F3将隔离的透明导电层区域与所述数据线断线节段在所述数据线断线处13的两端分别进行焊接,即在如图6所示的数据线断线修复焊接处31进行焊接,从而使该断裂的数据线5通过所述隔离的透明导电层区域连通信号,从而达到了修复数据线断线的目的。
其中,步骤F1中,采用检查设备,如使用点灯设备,通过人工操作找到数据线断线处13的坐标,或检查设备自动找到数据线断线处13坐标,再在显微镜下找到具体的数据线断线处13,也可使用一些带有点灯功能的修复设备,就可以直接通过点灯装置找到数据线断线处13。进一步,在步骤F2中,应用激光切割方式对数据线断线节段上方的公共电极进行切割。在步骤F3中,应用激光焊接方式将隔离的透明导电层区域与数据线断线节段通过形成熔接点焊接在一起。
此外,本实施例还提供了上述任意一种的阵列基板的栅线断线的修复方法,包括以下步骤:
步骤S1如图7所示,找到所述栅线断线处14,并且确定该栅线2上方与所述栅线断线处14邻近的第一孔状结构12和第二孔状结构11a之间的栅线为栅线断线节段;
步骤S2如图8所示,将位于栅线断线节段上方的公共电极8沿该条栅线两侧切割至与该栅线断线节段相邻的第一孔状结构区域12和第二孔状结构11a区域,即将栅线断线修复切断处22的公共电极切断,从而使设置在栅线断线节段的正上方的公共电极与该公共电极上的其他区域隔离,形成隔离的透明导电层区域;
步骤S3将隔离的透明导电层区域与所述栅线断线节段在所述栅线断线处14的两端分别进行焊接,即在图8中栅线断线修复焊接处32进行焊接,从而该断裂的栅线通过该隔离的透明导电层区域连通信号,达到了修复栅线的目的。
其中,步骤S1中,采用检查设备或其他方式找到栅线断线处14。进一步,步骤S2中,采用激光切割的方式将栅线断线节段上方的公共电极8进行切割。而且,在步骤S3中,采用激光焊接的方式等手段将隔离的透明导电层区域与所述栅线断线节段在所述栅线断线处14的两端进行焊接。
本实施例还提供一种显示装置,包括上述的阵列基板,所述显示装置可以为液晶面板、电子纸、OLED面板、手机、液晶显示器、平板电脑等具有任何显示功能的产品或部件。
以上实施方式仅用于说明本发明,而并非对本发明的限制,有关技术领域的普通技术人员,在不脱离本发明的精神和范围的情况下,还可以做出各种变化和变型,因此所有等同的技术方案也属于本发明的范畴,本发明的专利保护范围应由权利要求限定。
Claims (10)
1.一种阵列基板,包括公共电极、像素电极、薄膜晶体管、栅线和数据线,所述栅线和数据线交叉设置形成多个以矩阵形式排列的像素区域,所述公共电极在每个像素区域上方分别设有多个条形孔状结构的图案,其特征在于,所述栅线、数据线和公共电极制作在不同层上且相互部分重叠,所述公共电极在所述栅线和数据线交叉位置对应处均设有第一孔状结构的图案。
2.根据权利要求1所述的阵列基板,其特征在于,所述公共电极在薄膜晶体管正上方均设有第二孔状结构的图案,所述第二孔状结构对应设置在栅线的上方,且位于相邻两个第一孔状结构之间。
3.根据权利要求1所述的阵列基板,其特征在于,所述公共电极为透明导电层。
4.一种如权利要求1-3任一项所述阵列基板的数据线断线修复的方法,其特征在于,包括以下步骤:
步骤F1找到所述数据线断线处,并且确定该数据线上方与所述数据线断线处相邻两个第一孔状结构区域之间的数据线为数据线断线节段;
步骤F2将位于数据线断线节段上方的公共电极沿该条数据线两侧切割至与该数据线断线节段相邻的两个第一孔状结构区域,从而使设置在数据线断线节段的正上方的公共电极与公共电极上的其他区域隔离,形成隔离的透明导电层区域;
步骤F3将隔离的透明导电层区域与所述数据线断线节段在所述数据线断线处的两端分别进行焊接,从而使该断裂的数据线通过所述隔离的透明导电层区域连通信号。
5.根据权利要求4所述的阵列基板数据线断线修复的方法,其特征在于,所述步骤F2中,应用激光切割方式对数据线断线节段上方的公共电极进行切割。
6.根据权利要求4所述的阵列基板数据线断线修复的方法,其特征在于,所述步骤F3中,应用激光焊接方式将隔离的透明导电层区域与数据线断线节段通过形成熔接点焊接在一起。
7.一种如权利要求1-3任一项所述阵列基板的栅线断线修复的方法,其特征在于,包括以下步骤:
步骤S1找到所述栅线断线处,并且确定该栅线上方与所述栅线断线处邻近的第一孔状结构和第二孔状结构之间的栅线为栅线断线节段;
步骤S2将位于栅线断线节段上方的公共电极沿该条栅线两侧切割至与该栅线断线节段相邻的第一孔状结构区域和第二孔状结构区域,从而使设置在栅线断线节段的正上方的公共电极与该公共电极上的其他区域隔离,形成隔离的透明导电层区域;
步骤S3将隔离的透明导电层区域与所述栅线断线节段在所述栅线断线处的两端分别进行焊接,从而该断裂的栅线通过该隔离的透明导电层区域连通信号。
8.根据权利要求7所述阵列基板的栅线断线修复的方法,其特征在于,所述S2步骤中,采用激光切割的方式将栅线断线节段上方的公共电极进行切割。
9.根据权利要求7所述阵列基板的栅线断线修复的方法,其特征在于,所述步骤S3中,应用激光焊接方式将隔离的透明导电层区域与栅线断线节段通过形成熔接点焊接在一起。
10.一种显示装置,其特征在于,包括如权利要求1-3任一项所述的阵列基板。
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040125300A1 (en) * | 2002-12-31 | 2004-07-01 | Lg.Philips Lcd Co., Ltd. | Array substrate for in-plane switching mode liquid crystal display device and method for fabricating the same |
JP2004226858A (ja) * | 2003-01-24 | 2004-08-12 | Nec Kagoshima Ltd | 液晶表示装置及びその製造方法 |
CN101178491A (zh) * | 2007-10-29 | 2008-05-14 | 昆山龙腾光电有限公司 | 一种液晶显示装置阵列基板的修补方法 |
CN101398588A (zh) * | 2007-09-28 | 2009-04-01 | 乐金显示有限公司 | 液晶显示器件及其制造方法 |
CN102629046A (zh) * | 2011-06-29 | 2012-08-08 | 北京京东方光电科技有限公司 | 阵列基板及其制造方法、液晶显示器件 |
CN103048838A (zh) * | 2012-12-13 | 2013-04-17 | 北京京东方光电科技有限公司 | 一种阵列基板、液晶显示面板及驱动方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2830823B1 (fr) * | 2001-10-15 | 2004-02-27 | Valeo Systemes Dessuyage | Essuie-glace de vehicule automobile comportant un fermoir de securite |
JP4380648B2 (ja) * | 2005-05-25 | 2009-12-09 | エプソンイメージングデバイス株式会社 | 液晶装置及び電子機器 |
JP4434166B2 (ja) * | 2005-06-09 | 2010-03-17 | エプソンイメージングデバイス株式会社 | 液晶装置及び電子機器 |
JP4061416B2 (ja) * | 2006-02-22 | 2008-03-19 | エプソンイメージングデバイス株式会社 | 液晶表示装置 |
TWI414864B (zh) * | 2007-02-05 | 2013-11-11 | Hydis Tech Co Ltd | 邊緣電場切換模式之液晶顯示器 |
KR20100005883A (ko) * | 2008-07-08 | 2010-01-18 | 삼성전자주식회사 | 어레이 기판 및 이를 갖는 액정표시장치 |
CN103278987B (zh) | 2013-05-24 | 2015-07-01 | 京东方科技集团股份有限公司 | 阵列基板、该阵列基板断线修复方法及显示装置 |
-
2013
- 2013-05-24 CN CN201310198549.1A patent/CN103278987B/zh active Active
- 2013-11-27 US US14/372,848 patent/US9612461B2/en active Active
- 2013-11-27 WO PCT/CN2013/087962 patent/WO2014187097A1/zh active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040125300A1 (en) * | 2002-12-31 | 2004-07-01 | Lg.Philips Lcd Co., Ltd. | Array substrate for in-plane switching mode liquid crystal display device and method for fabricating the same |
JP2004226858A (ja) * | 2003-01-24 | 2004-08-12 | Nec Kagoshima Ltd | 液晶表示装置及びその製造方法 |
CN101398588A (zh) * | 2007-09-28 | 2009-04-01 | 乐金显示有限公司 | 液晶显示器件及其制造方法 |
CN101178491A (zh) * | 2007-10-29 | 2008-05-14 | 昆山龙腾光电有限公司 | 一种液晶显示装置阵列基板的修补方法 |
CN102629046A (zh) * | 2011-06-29 | 2012-08-08 | 北京京东方光电科技有限公司 | 阵列基板及其制造方法、液晶显示器件 |
CN103048838A (zh) * | 2012-12-13 | 2013-04-17 | 北京京东方光电科技有限公司 | 一种阵列基板、液晶显示面板及驱动方法 |
Cited By (33)
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---|---|---|---|---|
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US9612461B2 (en) | 2013-05-24 | 2017-04-04 | Boe Technology Group Co., Ltd. | Array substrate, method for repairing broken line of the array substrate, and display device |
US9716112B2 (en) | 2014-11-24 | 2017-07-25 | Boe Technology Group Co., Ltd. | Array substrate, its manufacturing method and display device |
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US9978318B2 (en) | 2015-04-29 | 2018-05-22 | E Ink Holdings Inc. | Electronic paper display device and manufacturing method thereof |
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