CN104730790B - 液晶显示装置、液晶显示器及其制作方法和暗点作业方法 - Google Patents

液晶显示装置、液晶显示器及其制作方法和暗点作业方法 Download PDF

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CN104730790B
CN104730790B CN201510133677.7A CN201510133677A CN104730790B CN 104730790 B CN104730790 B CN 104730790B CN 201510133677 A CN201510133677 A CN 201510133677A CN 104730790 B CN104730790 B CN 104730790B
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liquid crystal
data cable
crystal display
electrode
membrane transistor
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CN104730790A (zh
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王醉
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to CN201510133677.7A priority Critical patent/CN104730790B/zh
Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to US14/439,216 priority patent/US9785026B2/en
Priority to JP2017549204A priority patent/JP6472067B2/ja
Priority to RU2017134458A priority patent/RU2664677C1/ru
Priority to KR1020177024793A priority patent/KR101989724B1/ko
Priority to PCT/CN2015/075764 priority patent/WO2016149957A1/zh
Priority to GB1706896.6A priority patent/GB2546452B8/en
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    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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    • G02F1/1306—Details
    • G02F1/1309—Repairing; Testing
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Abstract

本发明提供一种液晶显示器，其包括上基板、下基板以及液晶层，上基板设有上共电极；下基板与上基板相对设置，下基板设有下共电极，液晶层设于上基板和下基板之间；下基板还设有扫描线、数据线、像素电极以及薄膜电晶体管，薄膜电晶体管的栅极与扫描线连接，薄膜电晶体管的源极与数据线连接，薄膜电晶体管的漏极与像素电极连接；其中，下共电极设有延伸部，数据线和薄膜电晶体管的源极的连接线与延伸部间隔交迭，在暗点化作业时，将数据线和源极的连接线段开，并将延伸部与源极的连接线导通，操作简便，暗点化作业难度低，避免暗点化作业导致的碎亮点问题，提高产品修复率及良率。

Description

液晶显示装置、液晶显示器及其制作方法和暗点作业方法
技术领域
本发明涉及显示技术领域，特别是涉及一种液晶显示装置及其液晶显示器，还涉及一种液晶显示器制作方法和该液晶显示器的暗点作业方法。
背景技术
图1a为VA型液晶显示面板像素结构俯视图，图1a为VA型液晶显示面板像素结构俯视图，像素通常由扫描线(Gate)1、数据线(Data)2、共电极(Com)、TFT4、像素电极5等部分组成。其中TFT(Thin Film Transistor，薄膜晶体管)，在像素驱动中起到开关的作用，在需要时打开使数据线(Data)信号可以写入到像素电极5中，而在其他时间处于关闭状态。实际生产中由于金属残留、异物等因素可能会导致TFT的沟道短路，使其失去开关功能，导致像素显示为亮点，这时通常需要对像素进行暗点化处理。
如图1a-1c所示，先将TFT与数据线和像素电极断开(图中的×表示断开)，再使用激光(Laser)沿A方向照射像素电极与下基板共电极(Acom)交叠位置，在高热下使二者熔融在一起实现导通(图中标号6表示用流光导通)，如此像素可显示为暗点。但当采用COA(Color Filter On Array，彩色滤光片阵列)或是Organic平坦层(有机平坦层)等工艺时，像素电极与下基板共电极之间增加了一层非常厚的绝缘介质，若仍采用一般的暗点化方法，则为了克服额外的厚绝缘层需要增加激光功率，使得修复难度增加。而且激光功率增加使得温度升高，色阻和像素电极在更高的温度下容易炸开翻起，使像素电极形貌发生改变导致液晶配向异常，同时飞溅的碎片还容易产生碎亮点问题，使得暗点化失败。
发明内容
本发明主要解决的技术问题是提供一种液晶显示装置、液晶显示器及其制作方法和暗点作业方法，以解暗点作时色阻和ITO层在容易炸开翻起、容易产生碎亮点等问题。
为解决上述技术问题，本发明采用的一个技术方案是：提供一种液晶显示器，其包括上基板、下基板以及液晶层，上基板设有上共电极；下基板与上基板相对设置，设有下共电极，液晶层设于上基板和下基板之间；下基板还设有扫描线、数据线、像素电极以及薄膜电晶体管，薄膜电晶体管的栅极与扫描线连接，薄膜电晶体管的源极与数据线连接，薄膜电晶体管的漏极与像素电极连接；其中，下共电极设有延伸部，数据线和薄膜电晶体管的源极的连接线与延伸部间隔交迭，在暗点化作业时，将数据线和源极的连接线段开，并将延伸部与源极的连接线导通。
其中，延伸部绝缘间隔交迭于连接线的上方或下方。
其中，下基板还设有使扫描线、数据线、像素电极以及薄膜电晶体管彼此绝缘的绝缘层。
其中，下基板采用COA工艺或Organic平坦层工艺形成。
其中，像素电极与绝缘层之间设有色阻层或平坦层。
其中，像素电极与上共电极形成储存电容。
其中，像素电极与下共电极形成液晶电容。
其中，像素电极设于数据线与扫描线绝缘交叉处的一侧，延伸部设于数据线与扫描线绝缘交叉处的另一侧。
其中，液晶显示装置包括上述的液晶显示器。
为解决上述技术问题，本发明还采用另一种技术方案：提供一种液晶显示器的制作方法，其包括步骤如下：在下基板形成多条平行间隔的下共电极，其中下共电极具有延伸部；在下基板形成多条平行间隔数据线；在下基板形成多条平行间隔扫描线，其中，扫描线与数据线绝缘交错形成阵列方形；在方形的一角形成薄膜电晶体管，其中，薄膜电晶体管的栅极与扫描线连接，薄膜电晶体管的源极与数据线连接，薄膜电晶体管的漏极与像素电极连接，数据线和薄膜电晶体管的源极的连接线与延伸部间隔交迭；在数据线与扫描线绝缘交叉的一侧处形成像素电极。
其中，在数据线与扫描线绝缘交叉的一侧形成像素电极步骤之前还包括：在下基板设置使扫描线、数据线、像素电极以及薄膜电晶体管彼此绝缘的绝缘层。
其中，下基板设置使扫描线、数据线、像素电极以及薄膜电晶体管彼此绝缘的绝缘层步骤之后还包括：采用COA工艺或Organic平坦层工艺在像素电极与绝缘层之间分别形成有色阻层或平坦层。
为解决上述技术问题，本发明还采用另一种技术方案：提供一种液晶显示器暗点化作业方法，对上述的液晶显示器进行暗点化作业，其包括步骤如下：将数据线与薄膜电晶体管的源极的连接线段开；将延伸部与薄膜电晶体管的源极导通。
本发明的有益效果是：区别于现有技术，本发明的液晶显示装置、液晶显示器及其制作方法和暗点作业方法在下共电极设有延伸部，数据线和薄膜电晶体管的源极的连接线与延伸部间隔交迭，使得在暗点化作业时，将数据线和源极的连接线段开，并用激光将延伸部与源极的连接线导通，使得像素电极的电压与下共电极的电压相等并进一步与上共电极的电压相等，从而使得对应的液晶分子不发生偏转导光以完成暗点化作业，操作简便，暗点化作业难度低，避免暗点化作业导致的碎亮点问题，提高产品修复率及良率。
附图说明
图1a是VA型液晶显示面板像素结构俯视图；
图1b是VA型液晶显示面板的部分等效电路图；
图1c是VA型液晶显示面板的部分结构主视图；
图2是本发明液晶显示器像素结构的俯视图；
图3是本发明液晶显示器的像素结构的等效电路图；
图4是本发明液晶显示器的主视图；
图5是本发明液晶显示器的制作方法的流程图；
图6是本发明的液晶显示器暗点化作业方法流程图。
具体实施方式
下面将结合附图和实施方式对本发明进行详细说明。
请参阅图2-图3，图2是本发明液晶显示器像素结构的俯视图，图3是本发明液晶显示器的像素结构的等效电路图，图4是本发明液晶显示器的主视图。
本发明的液晶显示器包括上基板(图未示)、下基板以及液晶层(图未示)，上基板设有上共电极(图未示)，下基板与上基板相对设置，设有下共电极13，液晶层设于上基板和下基板之间。
本发明的下基板还设有扫描线11、数据线12、像素电极15以及薄膜电晶体管14，薄膜电晶体管14的栅极与扫描线11连接，薄膜电晶体管14的源极与数据线12连接，薄膜电晶体管14的漏极与像素电极15连接；其中，下共电极13设有延伸部131，数据线12和薄膜电晶体管14的源极的连接线与延伸部131间隔交迭，延伸部131绝缘间隔交迭于连接线132的上方或下方，具体地，延伸部131自下共电极13向薄膜电晶体管14的源极延伸，且其末端邻近薄膜电晶体管14的源极，并设于数据线12与薄膜电晶体管14的源极的连接线132的上方或下方，且连接线132与延伸部131之间彼此绝缘。像素电极15与上共电极形成储存电容Cst，像素电极15与下共电极13形成液晶电容Clc，像素电极15设于数据线12与扫描线11绝缘交叉处111的一侧，延伸部131设于数据线12与扫描线11绝缘交叉处111的另一侧，具体地，绝缘交叉处111使延伸部131与像素电极15间隔设置，且延伸部131与连接线132的间隔交迭处与像素电极15不重叠且间隔设置，以使得在暗点化作业时，减少激光对像素电极15的影响。
在其它实施例中，下基板还设有依次层叠的绝缘层18和色阻层19，扫描线11、数据线12、像素电极15以及薄膜电晶体管14设于绝缘层18中以使各部分彼此绝缘、色阻层19设于像素电极15与绝缘层18之间，在其实施例中，像素电极15与绝缘层18之间的可不设置色阻层19，而是设置平坦层，色阻层19可采用COA工艺形成在下基板上形成，平坦层可采用Organic平坦层工艺在下基板上形成。
如图2或图3所示，在暗点化作业时，将数据线12和源极的连接线132段开(图中打×表示在暗点化作业时断开)，并将延伸部131与源极的连接线132导通(图中标号16表示采用激光使两条线导通)，以使得像素电极15的电压与下共电极13的电压相等并进一步与上共电极的电压相等，从而使得对应的液晶分子不发生偏转导光以完成暗点化作业。
本发明还提供一种液晶显示装置，其包括上述的液晶显示器。
请参阅图5，图5是本发明液晶显示器的制作方法的流程图，本发明的液晶显示器的制作方法包括步骤如下：
S10：在下基板形成多条平行间隔的下共电极13；
其中，下共电极13具有延伸部131。
S20：在下基板形成多条平行间隔数据线12；
S30：在下基板形成多条平行间隔扫描线11；
其中，扫描线11与数据线12绝缘交错形成阵列方形；
S40：在方形的一角形成薄膜电晶体管14；
其中，薄膜电晶体管14的栅极与扫描线11连接，薄膜电晶体管14的源极与数据线12连接，薄膜电晶体管14的漏极与像素电极15连接，数据线12和薄膜电晶体管14的源极的连接线132与延伸部131间隔交迭，即，连接线132与延伸部131之间重叠且绝缘，具体地，延伸部131自下共电极13向薄膜电晶体管14的源极延伸，且其末端邻近薄膜电晶体管14的源极，并设于数据线12与薄膜电晶体管14的源极的连接线132的上方或下方。
S50：在下基板设置使扫描线11、数据线12、像素电极15以及薄膜电晶体管14彼此绝缘的绝缘层18；
S60：采用COA工艺或Organic平坦层工艺在像素电极15与绝缘层18之间分别形成有色阻层19或平坦层；
S70：在数据线12与扫描线11绝缘交叉的一侧形成像素电极15；
其中，像素电极15设于数据线12与扫描线11绝缘交叉处111的一侧，延伸部131设于数据线12与扫描线11绝缘交叉处111的另一侧，具体地，延伸部131与连接线132的间隔交迭处与像素电极15不重叠且间隔设置，使得在暗点化作业时，减少激光对像素电极15的影响。
请参阅图6，图6是本发明的液晶显示器暗点化作业方法流程图，该方法是对上述的液晶显示器进行暗点化作业，具体步骤如下：
S110：将数据线12与薄膜电晶体管14的源极的连接线132段开；
S120：将延伸部131与薄膜电晶体管14的源极导通。
其中，可采用激光等技术照射延伸部131与连接线132重叠处，从而使得延伸部131与薄膜电晶体管14的源极导通。
本发明的液晶显示装置、液晶显示器及其制作方法和暗点作业方法在下共电极13设有延伸部131，数据线12和薄膜电晶体管14的源极的连接线132与延伸部131间隔交迭，使得在暗点化作业时，将数据线12和源极的连接线132段开，并用激光将延伸部131与源极的连接线132导通，使得像素电极15的电压与下共电极13的电压相等并进一步与上共电极的电压相等，从而使得对应的液晶分子不发生偏转导光以完成暗点化作业，操作简便，暗点化作业难度低，避免暗点化作业导致的碎亮点问题，提高产品修复率及良率。
以上所述仅为本发明的实施方式，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (10)

1.一种液晶显示器，其特征在于，包括：
上基板，设有上共电极；
下基板，与所述上基板相对设置，设有下共电极；
液晶层，设于所述上基板和所述下基板之间；
所述下基板还设有扫描线、数据线、像素电极以及薄膜电晶体管，所述薄膜电晶体管的栅极与扫描线连接，所述薄膜电晶体管的源极与数据线连接，所述薄膜电晶体管的漏极与像素电极连接，所述像素电极与与所述上共电极形成储存电容，所述像素电极与所述下共电极形成液晶电容；
其中，所述下共电极设有延伸部，所述延伸部绝缘间隔交迭于所述数据线和所述薄膜电晶体管的源极的连接线的上方或下方，在暗点化作业时，将所述数据线和所述源极的连接线段开，并将所述延伸部与所述源极的连接线导通。
2.根据权利要求1所述的液晶显示器，其特征在于，所述下基板还设有使所述扫描线、所述数据线、所述像素电极以及所述薄膜电晶体管彼此绝缘的绝缘层。
3.根据权利要求2所述的液晶显示器，其特征在于，所述下基板采用COA工艺或Organic平坦层工艺形成。
4.根据权利要求2所述的液晶显示器，其特征在于，所述像素电极与所述绝缘层之间设有色阻层或平坦层。
5.根据权利要求1所述的液晶显示器，其特征在于，所述像素电极设于所述数据线与所述扫描线绝缘交叉处的一侧，所述延伸部设于所述数据线与所述扫描线绝缘交叉处的另一侧。
6.一种液晶显示装置，其特征在于，所述液晶显示装置包括权利要求1-5任意一项所述的液晶显示器。
7.一种如权利要求1～5中任一项所述液晶显示器的制作方法，其特征在于，包括步骤如下：在所述下基板形成多条平行间隔的下共电极，其中所述下共电极具有延伸部；
在所述下基板形成多条平行间隔数据线；
在所述下基板形成多条平行间隔扫描线，其中，多条所述扫描线与多条所述数据线绝缘交错形成阵列方形；
在所述方形的一角形成薄膜电晶体管，其中，所述薄膜电晶体管的栅极与扫描线连接，所述薄膜电晶体管的源极与数据线连接，所述薄膜电晶体管的漏极与像素电极连接，所述延伸部绝缘间隔交迭于所述数据线和所述薄膜电晶体管的源极的连接线的上方或下方，以在对所述液晶显示器进行暗点化作业时，将所述数据线和所述源极的连接线段开，并将所述延伸部与所述源极的连接线导通；
在所述数据线与所述扫描线绝缘交叉处的一侧形成像素电极。
8.根据权利要求7所述的方法，其特征在于，所述在所述数据线与所述扫描线绝缘交叉的一侧形成像素电极步骤之前还包括：
在所述下基板设置使所述扫描线、所述数据线、所述像素电极以及所述薄膜电晶体管彼此绝缘的绝缘层。
9.根据权利要求8所述的方法，其特征在于，所述下基板设置使所述扫描线、所述数据线、所述像素电极以及所述薄膜电晶体管彼此绝缘的绝缘层步骤之后还包括：
采用COA工艺或Organic平坦层工艺在所述像素电极与所述绝缘层之间分别形成有色阻层或平坦层。
10.一种液晶显示器暗点化作业方法，其特征在于，对权利要求1-5中任意一项所述的液晶显示器进行暗点化作业，所述液晶显示器进行暗点化作业方法包括步骤如下：
将数据线与所述薄膜电晶体管的源极的连接线段开；
将所述延伸部与所述薄膜电晶体管的源极导通。
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