WO2016149957A1 - 液晶显示装置、液晶显示器及其制作方法和暗点作业方法 - Google Patents

液晶显示装置、液晶显示器及其制作方法和暗点作业方法 Download PDF

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WO2016149957A1
WO2016149957A1 PCT/CN2015/075764 CN2015075764W WO2016149957A1 WO 2016149957 A1 WO2016149957 A1 WO 2016149957A1 CN 2015075764 W CN2015075764 W CN 2015075764W WO 2016149957 A1 WO2016149957 A1 WO 2016149957A1
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Prior art keywords
liquid crystal
crystal display
thin film
pixel electrode
film transistor
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PCT/CN2015/075764
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English (en)
French (fr)
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王醉
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深圳市华星光电技术有限公司
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Priority to JP2017549204A priority Critical patent/JP6472067B2/ja
Priority to GB1706896.6A priority patent/GB2546452B8/en
Priority to KR1020177024793A priority patent/KR101989724B1/ko
Priority to US14/439,216 priority patent/US9785026B2/en
Priority to RU2017134458A priority patent/RU2664677C1/ru
Publication of WO2016149957A1 publication Critical patent/WO2016149957A1/zh

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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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Definitions

  • the present invention relates to the field of display technologies, and in particular, to a liquid crystal display device and a liquid crystal display thereof, and to a method for fabricating a liquid crystal display and a method for operating a dark spot of the liquid crystal display.
  • FIG. 1a is a top view of a pixel structure of a VA type liquid crystal display panel
  • FIG. 1a is a top view of a pixel structure of a VA type liquid crystal display panel.
  • the pixels are usually composed of a gate line 1, a data line 2, a common electrode (Com), a TFT 4, and a pixel. Electrode 5 and other parts.
  • TFT Thin Film Transistor, a thin film transistor, functions as a switch in the pixel drive, turning on when necessary to enable a data line signal to be written into the pixel electrode 5, and being turned off at other times.
  • the channel of the TFT may be short-circuited, causing it to lose its switching function, resulting in the pixel being displayed as a bright spot. In this case, it is usually necessary to darken the pixel.
  • the TFT is disconnected from the data line and the pixel electrode (the ⁇ in the figure indicates disconnection), and then the laser electrode (Laser) is used to illuminate the pixel electrode in the A direction and the lower substrate common electrode (Acom).
  • the stacked position which is fused together under high heat to achieve conduction (reference numeral 6 in the figure indicates conduction with streamer), such that the pixel can be displayed as a dark spot.
  • COA Color Filter On Array, color filter array
  • Organic flat layer organic flat layer
  • the increase of the laser power causes the temperature to rise, the color resistance and the pixel electrode are easily blasted up and turned up at a higher temperature, so that the shape of the pixel electrode changes to cause the liquid crystal alignment to be abnormal, and the spattered fragments are also prone to the problem of broken bright spots, so that Dark spots failed.
  • the technical problem to be solved by the present invention is to provide a liquid crystal display device, a liquid crystal display, a manufacturing method thereof, and a dark-spot operation method, in order to solve the color resistance of the dark spot and the ITO layer is easy to be blasted, easily broken, and the like. problem.
  • a technical solution adopted by the present invention is to provide a liquid crystal display device including a liquid crystal display including an upper substrate, a lower substrate, and a liquid crystal layer, the upper substrate is provided with an upper common electrode, and the upper substrate is provided with an upper substrate The upper substrate is disposed opposite to the upper substrate, and the lower common electrode is disposed, the lower substrate is formed by a COA process or an Organic flat layer process; the liquid crystal layer is disposed between the upper substrate and the lower substrate; and the lower substrate is further provided with a scan line a data line, a pixel electrode, and a thin film transistor, the gate of the thin film transistor is connected to the scan line, the source of the thin film transistor is connected to the data line, the drain of the thin film transistor is connected to the pixel electrode, and the pixel electrode is disposed on the data line One side of the intersection with the scan line insulation, the extension portion is disposed at the other side of the intersection of the data line and the scan line insulation; wherein the lower common electrode is provided with an
  • extension insulating interval overlaps above or below the connecting line.
  • the lower substrate is further provided with an insulating layer that insulates the scan lines, the data lines, the pixel electrodes, and the thin film transistors from each other.
  • the lower substrate is formed by a COA process or an Organic flat layer process.
  • a color resist layer or a flat layer is disposed between the pixel electrode and the insulating layer.
  • the pixel electrode and the upper common electrode form a storage capacitor.
  • the pixel electrode and the lower common electrode form a liquid crystal capacitor.
  • the liquid crystal display device includes the above liquid crystal display.
  • the present invention adopts a technical solution to provide a liquid crystal display including an upper substrate, a lower substrate, and a liquid crystal layer
  • the upper substrate is provided with an upper common electrode
  • the lower substrate is disposed opposite to the upper substrate, a common electrode, a liquid crystal layer is disposed between the upper substrate and the lower substrate
  • the lower substrate is further provided with a scan line, a data line, a pixel electrode, and a thin film transistor, a gate of the thin film transistor is connected to the scan line, and a source of the thin film transistor
  • the pole is connected to the data line, and the drain of the thin film transistor is connected to the pixel electrode
  • the lower common electrode is provided with an extension portion, and the connection line between the data line and the source of the thin film transistor is overlapped with the extension portion, and is darkened During operation, open the connecting line between the data line and the source, and turn on the connecting line between the extension and the source.
  • extension insulating interval overlaps above or below the connecting line.
  • the lower substrate is further provided with an insulating layer that insulates the scan lines, the data lines, the pixel electrodes, and the thin film transistors from each other.
  • the lower substrate is formed by a COA process or an Organic flat layer process.
  • a color resist layer or a flat layer is disposed between the pixel electrode and the insulating layer.
  • the pixel electrode and the upper common electrode form a storage capacitor.
  • the pixel electrode and the lower common electrode form a liquid crystal capacitor.
  • the pixel electrode is disposed at one side of the intersection of the data line and the scan line, and the extension portion is disposed at the other side of the intersection of the data line and the scan line.
  • the liquid crystal display device includes the above liquid crystal display.
  • the present invention also adopts another technical solution: a method for fabricating a liquid crystal display, comprising the steps of: forming a plurality of parallel spaced lower common electrodes on a lower substrate, wherein the lower common electrode has an extension; Forming a plurality of parallel spaced data lines on the lower substrate; forming a plurality of parallel spaced scan lines on the lower substrate, wherein the scan lines are insulated from the data lines to form an array square; forming a thin film transistor at a corner of the square, wherein the gate of the thin film transistor Connected to the scan line, the source of the thin film transistor is connected to the data line, the drain of the thin film transistor is connected to the pixel electrode, and the connection line of the source of the data line and the thin film transistor is overlapped with the extension; in the data line and A pixel electrode is formed at one side of the scan line insulation crossing.
  • the method further includes: providing an insulating layer that insulates the scan line, the data line, the pixel electrode, and the thin film transistor from each other on the lower substrate.
  • the step of providing an insulating layer for insulating the scan line, the data line, the pixel electrode, and the thin film transistor from each other after the lower substrate further comprises: forming a color resist layer between the pixel electrode and the insulating layer by using a COA process or an organic flat layer process; Flat layer.
  • the present invention also adopts another technical solution: providing a dark spot operation method for a liquid crystal display, and performing a dark spot operation on the liquid crystal display, which comprises the following steps: the data line and the thin film transistor The connection line segment of the source is turned on; the extension is electrically connected to the source of the thin film transistor.
  • the invention has the beneficial effects that the liquid crystal display device, the liquid crystal display, the manufacturing method thereof and the dark-spot operation method of the present invention are provided with an extension portion, a connection between a data line and a source of the thin film transistor, in contrast to the prior art.
  • the line and the extension are spaced apart such that during the dark dot operation, the connection line of the data line and the source is opened, and the connection line between the extension and the source is turned on by the laser, so that the voltage of the pixel electrode and the lower common electrode
  • the voltages are equal and further equal to the voltage of the upper common electrode, so that the corresponding liquid crystal molecules do not deflect the light guide to complete the dark spotting operation, the operation is simple, the dark spotting operation is difficult, and the dark spotting operation is avoided. Highlight issues, improve product repair rate and yield.
  • 1a is a top view of a pixel structure of a VA type liquid crystal display panel
  • 1b is a partial equivalent circuit diagram of a VA type liquid crystal display panel
  • Figure 1c is a partial front view showing a structure of a VA type liquid crystal display panel
  • FIG. 2 is a top plan view showing a pixel structure of a liquid crystal display of the present invention.
  • FIG. 3 is an equivalent circuit diagram of a pixel structure of a liquid crystal display of the present invention.
  • Figure 4 is a front elevational view of the liquid crystal display of the present invention.
  • FIG. 5 is a flow chart of a method of fabricating a liquid crystal display of the present invention.
  • Fig. 6 is a flow chart showing the dark spot operation method of the liquid crystal display of the present invention.
  • FIG. 2 is a plan view showing a pixel structure of a liquid crystal display according to the present invention
  • FIG. 3 is an equivalent circuit diagram of a pixel structure of the liquid crystal display of the present invention
  • FIG. 4 is a front view of the liquid crystal display of the present invention.
  • the liquid crystal display of the present invention comprises an upper substrate (not shown), a lower substrate and a liquid crystal layer (not shown), the upper substrate is provided with an upper common electrode (not shown), and the lower substrate is opposite to the upper substrate, and the lower substrate is provided
  • the electrode 13 has a liquid crystal layer disposed between the upper substrate and the lower substrate.
  • the lower substrate of the present invention is further provided with a scan line 11, a data line 12, a pixel electrode 15, and a thin film transistor 14, the gate of the thin film transistor 14 is connected to the scan line 11, and the source of the thin film transistor 14 is connected to the data line 12.
  • the drain of the thin film transistor 14 is connected to the pixel electrode 15; wherein the lower common electrode 13 is provided with an extension portion 131, and the connection line between the data line 12 and the source of the thin film transistor 14 is overlapped with the extension portion 131, and the extension portion is overlapped.
  • the 131 insulation interval overlaps above or below the connection line 132.
  • the extension portion 131 extends from the lower common electrode 13 to the source of the thin film transistor 14 and is adjacent to the source of the thin film transistor 14 and is disposed at
  • the data line 12 is above or below the connection line 132 of the source of the thin film transistor 14 and the connection line 132 and the extension 131 are insulated from each other.
  • the pixel electrode 15 and the upper common electrode form a storage capacitor Cst
  • the pixel electrode 15 and the lower common electrode 13 form a liquid crystal capacitor Clc
  • the pixel electrode 15 is disposed at one side of the intersection 111 of the data line 12 and the scanning line 11 at an intersection 111
  • the extension portion 131 is provided at The other side of the intersection 111 of the data line 12 and the scan line 11 is insulated.
  • the insulating intersection 111 spaces the extension portion 131 from the pixel electrode 15, and the interval between the extension portion 131 and the connection line 132 overlaps with the pixel electrode. 15 is not overlapped and spaced so that the effect of the laser on the pixel electrode 15 is reduced during dark spotting operations.
  • the lower substrate is further provided with an insulating layer 18 and a color resist layer 19 which are sequentially stacked, and the scan lines 11, the data lines 12, the pixel electrodes 15, and the thin film transistors 14 are disposed in the insulating layer 18 so that the portions are in contact with each other.
  • the insulating and color resist layer 19 is disposed between the pixel electrode 15 and the insulating layer 18.
  • the color resist layer 19 may be disposed between the pixel electrode 15 and the insulating layer 18, but a flat layer and a color resist layer may be disposed. 19 can be formed on the lower substrate by a COA process, and the planar layer can be formed on the lower substrate by an Organic flat layer process.
  • the data line 12 and the source connection line 132 are segmented (in the figure, x is indicated to be broken during the dark spotting operation), and the extension portion 131 is opened.
  • the connection line 132 to the source is turned on (reference numeral 16 in the figure indicates that the two wires insulated from each other are turned on by a laser) so that the voltage of the pixel electrode 15 is equal to the voltage of the lower common electrode 13 and further with the upper common electrode. The voltages are equal, so that the corresponding liquid crystal molecules do not deflect the light guide to complete the dark spotting operation.
  • the present invention also provides a liquid crystal display device comprising the above liquid crystal display.
  • FIG. 5 is a flowchart of a method for fabricating a liquid crystal display according to the present invention.
  • the method for fabricating the liquid crystal display of the present invention includes the following steps:
  • the lower common electrode 13 has an extending portion 131.
  • the scan line 11 and the data line 12 are insulated and staggered to form an array square;
  • the gate of the thin film transistor 14 is connected to the scan line 11, the source of the thin film transistor 14 is connected to the data line 12, the drain of the thin film transistor 14 is connected to the pixel electrode 15, and the data line 12 and the thin film transistor 14 are connected.
  • the connection line 132 of the source overlaps with the extension portion 131, that is, the connection line 132 overlaps with the extension portion 131 and is insulated.
  • the extension portion 131 extends from the lower common electrode 13 to the source of the thin film transistor 14 .
  • the end is adjacent to the source of the thin film transistor 14 and is disposed above or below the connection line 132 between the data line 12 and the source of the thin film transistor 14 .
  • S50 providing an insulating layer 18 for insulating the scan line 11, the data line 12, the pixel electrode 15, and the thin film transistor 14 from each other on the lower substrate;
  • a color resist layer 19 is formed between the pixel electrode 15 and the insulating layer 18 by a COA process, and a flat layer is formed between the pixel electrode 15 and the insulating layer 18 by an Organic flat layer process.
  • the pixel electrode 15 is disposed on one side of the intersection 111 of the data line 12 and the scanning line 11
  • the extension portion 131 is disposed on the other side of the insulating intersection 111 of the data line 12 and the scanning line 11 .
  • the extending portion 131 and The interval overlap of the connection lines 132 does not overlap and is spaced apart from the pixel electrodes 15, so that the influence of the laser light on the pixel electrodes 15 is reduced during the dark spotting operation.
  • FIG. 6 is a flow chart of a method for darkening a liquid crystal display according to the present invention. The method is to perform dark spotting on the liquid crystal display, and the specific steps are as follows:
  • the extension portion 131 is electrically connected to the source of the thin film transistor 14 .
  • extension portion 131 and the connection line 132 may be irradiated with a technique such as a laser to make the extension portion 131 and the source of the thin film transistor 14 conductive.
  • the liquid crystal display device, the liquid crystal display, the method for fabricating the same, and the dark-spot operation method of the present invention are provided with an extension portion 131 at the lower common electrode 13, and the connection line 132 of the source of the data line 12 and the thin film transistor 14 is overlapped with the extension portion 131.
  • the data line 12 and the source connection line 132 are segmented, and the extension portion 131 and the source connection line 132 are electrically connected by a laser so that the voltage of the pixel electrode 15 and the lower common electrode 13 are The voltages are equal and further equal to the voltage of the upper common electrode, so that the corresponding liquid crystal molecules do not deflect the light guide to complete the dark spotting operation, the operation is simple, the dark spotting operation is difficult, and the dark spotting operation is avoided. Highlight issues, improve product repair rate and yield.

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Abstract

一种液晶显示装置、液晶显示器及其制作方法和暗点作业方法，其包括液晶显示器，下基板还设有下共电极（13）、扫描线（11）、数据线（12）、像素电极（15）以及薄膜电晶体管（14），薄膜电晶体管（14）的栅极与扫描线（11）连接，薄膜电晶体管（14）的源极与数据线（12）连接，薄膜电晶体管（14）的漏极与像素电极（15）连接；其中，下共电极（13）设有延伸部（131），数据线（12）和薄膜电晶体管（14）的源极的连接线（132）与延伸部（131）间隔交迭，在暗点化作业时，将数据线（12）和源极的连接线（132）段开，并将延伸部（131）与源极的连接线（132）导通。

Description

液晶显示装置、液晶显示器及其制作方法和暗点作业方法
【技术领域】
本发明涉及显示技术领域，特别是涉及一种液晶显示装置及其液晶显示器，还涉及一种液晶显示器制作方法和该液晶显示器的暗点作业方法。
【背景技术】
图1a为VA型液晶显示面板像素结构俯视图，图1a为VA型液晶显示面板像素结构俯视图，像素通常由扫描线（Gate）1、数据线（Data）2、共电极（Com）、TFT4、像素电极5等部分组成。其中TFT（Thin Film Transistor，薄膜晶体管），在像素驱动中起到开关的作用，在需要时打开使数据线（Data）信号可以写入到像素电极5中，而在其他时间处于关闭状态。实际生产中由于金属残留、异物等因素可能会导致TFT的沟道短路，使其失去开关功能，导致像素显示为亮点，这时通常需要对像素进行暗点化处理。
如图1a-1c所示，先将TFT与数据线和像素电极断开（图中的×表示断开），再使用激光（Laser）沿A方向照射像素电极与下基板共电极（Acom）交叠位置，在高热下使二者熔融在一起实现导通（图中标号6表示用流光导通），如此像素可显示为暗点。但当采用COA（Color Filter On Array，彩色滤光片阵列）或是Organic平坦层（有机平坦层）等工艺时，像素电极与下基板共电极之间增加了一层非常厚的绝缘介质，若仍采用一般的暗点化方法，则为了克服额外的厚绝缘层需要增加激光功率，使得修复难度增加。而且激光功率增加使得温度升高，色阻和像素电极在更高的温度下容易炸开翻起，使像素电极形貌发生改变导致液晶配向异常，同时飞溅的碎片还容易产生碎亮点问题，使得暗点化失败。
【发明内容】
本发明主要解决的技术问题是提供一种液晶显示装置、液晶显示器及其制作方法和暗点作业方法，以解暗点作时色阻和ITO层在容易炸开翻起、容易产生碎亮点等问题。
为解决上述技术问题，本发明采用的一个技术方案是：提供一种液晶显示装置，其包括液晶显示器，液晶显示器包括上基板、下基板以及液晶层，上基板设有上共电极；上基板设有上共电极；下基板与上基板相对设置，设有下共电极，下基板采用COA工艺或Organic平坦层工艺形成；液晶层设于上基板和下基板之间；下基板还设有扫描线、数据线、像素电极以及薄膜电晶体管，薄膜电晶体管的栅极与扫描线连接，薄膜电晶体管的源极与数据线连接，薄膜电晶体管的漏极与像素电极连接，像素电极设于数据线与扫描线绝缘交叉处的一侧，延伸部设于数据线与扫描线绝缘交叉处的另一侧；其中，下共电极设有延伸部，数据线和薄膜电晶体管的源极的连接线与延伸部间隔交迭，在暗点化作业时，将数据线和源极的连接线段开，并延伸部与源极的连接线导通。
其中，延伸部绝缘间隔交迭于连接线的上方或下方。
其中，下基板还设有使扫描线、数据线、像素电极以及薄膜电晶体管彼此绝缘的绝缘层。
其中，下基板采用COA工艺或Organic平坦层工艺形成。
其中，像素电极与绝缘层之间设有色阻层或平坦层。
其中，像素电极与上共电极形成储存电容。
其中，像素电极与下共电极形成液晶电容。
其中，液晶显示装置包括上述的液晶显示器。
为解决上述技术问题，本发明采用的一个技术方案是：提供一种液晶显示器，其包括上基板、下基板以及液晶层，上基板设有上共电极；下基板与上基板相对设置，设有下共电极，液晶层设于上基板和下基板之间；下基板还设有扫描线、数据线、像素电极以及薄膜电晶体管，薄膜电晶体管的栅极与扫描线连接，薄膜电晶体管的源极与数据线连接，薄膜电晶体管的漏极与像素电极连接；其中，下共电极设有延伸部，数据线和薄膜电晶体管的源极的连接线与延伸部间隔交迭，在暗点化作业时，将数据线和源极的连接线段开，并将延伸部与源极的连接线导通。
其中，延伸部绝缘间隔交迭于连接线的上方或下方。
其中，下基板还设有使扫描线、数据线、像素电极以及薄膜电晶体管彼此绝缘的绝缘层。
其中，下基板采用COA工艺或Organic平坦层工艺形成。
其中，像素电极与绝缘层之间设有色阻层或平坦层。
其中，像素电极与上共电极形成储存电容。
其中，像素电极与下共电极形成液晶电容。
其中，像素电极设于数据线与扫描线绝缘交叉处的一侧，延伸部设于数据线与扫描线绝缘交叉处的另一侧。
其中，液晶显示装置包括上述的液晶显示器。
为解决上述技术问题，本发明还采用另一种技术方案：提供一种液晶显示器的制作方法，其包括步骤如下：在下基板形成多条平行间隔的下共电极，其中下共电极具有延伸部；在下基板形成多条平行间隔数据线；在下基板形成多条平行间隔扫描线，其中，扫描线与数据线绝缘交错形成阵列方形；在方形的一角形成薄膜电晶体管，其中，薄膜电晶体管的栅极与扫描线连接，薄膜电晶体管的源极与数据线连接，薄膜电晶体管的漏极与像素电极连接，数据线和薄膜电晶体管的源极的连接线与延伸部间隔交迭；在数据线与扫描线绝缘交叉的一侧处形成像素电极。
其中，在数据线与扫描线绝缘交叉的一侧形成像素电极步骤之前还包括：在下基板设置使扫描线、数据线、像素电极以及薄膜电晶体管彼此绝缘的绝缘层。
其中，下基板设置使扫描线、数据线、像素电极以及薄膜电晶体管彼此绝缘的绝缘层步骤之后还包括：采用COA工艺或Organic平坦层工艺在像素电极与绝缘层之间分别形成有色阻层或平坦层。
为解决上述技术问题，本发明还采用另一种技术方案：提供一种液晶显示器暗点化作业方法，对上述的液晶显示器进行暗点化作业，其包括步骤如下：将数据线与薄膜电晶体管的源极的连接线段开；将延伸部与薄膜电晶体管的源极导通。
本发明的有益效果是：区别于现有技术，本发明的液晶显示装置、液晶显示器及其制作方法和暗点作业方法在下共电极设有延伸部，数据线和薄膜电晶体管的源极的连接线与延伸部间隔交迭，使得在暗点化作业时，将数据线和源极的连接线段开，并用激光将延伸部与源极的连接线导通，使得像素电极的电压与下共电极的电压相等并进一步与上共电极的电压相等，从而使得对应的液晶分子不发生偏转导光以完成暗点化作业，操作简便，暗点化作业难度低，避免暗点化作业导致的碎亮点问题，提高产品修复率及良率。
【附图说明】
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图，其中：
图1a是VA型液晶显示面板像素结构俯视图；
图1b是VA型液晶显示面板的部分等效电路图；
图1c是VA型液晶显示面板的部分结构主视图；
图2是本发明液晶显示器像素结构的俯视图；
图3是本发明液晶显示器的像素结构的等效电路图；
图4是本发明液晶显示器的主视图；
图5是本发明液晶显示器的制作方法的流程图；
图6是本发明的液晶显示器暗点化作业方法流程图。
【具体实施方式】
下面将结合附图和实施方式对本发明进行详细说明。
请参阅图2-图3，图2是本发明液晶显示器像素结构的俯视图，图3是本发明液晶显示器的像素结构的等效电路图，图4是本发明液晶显示器的主视图。
本发明的液晶显示器包括上基板（图未示）、下基板以及液晶层（图未示），上基板设有上共电极（图未示），下基板与上基板相对设置，设有下共电极13，液晶层设于上基板和下基板之间。
本发明的下基板还设有扫描线11、数据线12、像素电极15以及薄膜电晶体管14，薄膜电晶体管14的栅极与扫描线11连接，薄膜电晶体管14的源极与数据线12连接，薄膜电晶体管14的漏极与像素电极15连接；其中，下共电极13设有延伸部131，数据线12和薄膜电晶体管14的源极的连接线与延伸部131间隔交迭，延伸部131绝缘间隔交迭于连接线132的上方或下方，具体地，延伸部131自下共电极13向薄膜电晶体管14的源极延伸，且其末端邻近薄膜电晶体管14的源极，并设于数据线12与薄膜电晶体管14的源极的连接线132的上方或下方，且连接线132与延伸部131之间彼此绝缘。像素电极15与上共电极形成储存电容Cst，像素电极15与下共电极13形成液晶电容Clc，像素电极15设于数据线12与扫描线11绝缘交叉处111的一侧，延伸部131设于数据线12与扫描线11绝缘交叉处111的另一侧，具体地，绝缘交叉处111使延伸部131与像素电极15间隔设置，且延伸部131与连接线132的间隔交迭处与像素电极15不重叠且间隔设置，以使得在暗点化作业时，减少激光对像素电极15的影响。
在其它实施例中，下基板还设有依次层叠的绝缘层18和色阻层19，扫描线11、数据线12、像素电极15以及薄膜电晶体管14设于绝缘层18中以使各部分彼此绝缘、色阻层19设于像素电极15与绝缘层18之间，在其实施例中，像素电极15与绝缘层18之间的可不设置色阻层19，而是设置平坦层，色阻层19可采用COA工艺形成于下基板上，平坦层可采用Organic平坦层工艺在下基板上形成。
如图2或图3所示，在暗点化作业时，将数据线12和源极的连接线132段开（图中打×表示在暗点化作业时断开），并将延伸部131与源极的连接线132导通（图中标号16表示采用激光使两条彼此绝缘的线导通），以使得像素电极15的电压与下共电极13的电压相等并进一步与上共电极的电压相等，从而使得对应的液晶分子不发生偏转导光以完成暗点化作业。
本发明还提供一种液晶显示装置，其包括上述的液晶显示器。
请参阅图5，图5是本发明液晶显示器的制作方法的流程图，本发明的液晶显示器的制作方法包括步骤如下：
S10：在下基板形成多条平行间隔的下共电极13；
其中，下共电极13具有延伸部131。
S20：在下基板形成多条平行间隔数据线12；
S30：在下基板形成多条平行间隔扫描线11；
其中，扫描线11与数据线12绝缘交错形成阵列方形；
S40：在方形的一角形成薄膜电晶体管14；
其中，薄膜电晶体管14的栅极与扫描线11连接，薄膜电晶体管14的源极与数据线12连接，薄膜电晶体管14的漏极与像素电极15连接，数据线12和薄膜电晶体管14的源极的连接线132与延伸部131间隔交迭，即，连接线132与延伸部131之间重叠且绝缘，具体地，延伸部131自下共电极13向薄膜电晶体管14的源极延伸，且其末端邻近薄膜电晶体管14的源极，并设于数据线12与薄膜电晶体管14的源极的连接线132的上方或下方。
S50：在下基板设置使扫描线11、数据线12、像素电极15以及薄膜电晶体管14彼此绝缘的绝缘层18；
S60：采用COA工艺或Organic平坦层工艺使像素电极15与绝缘层18之间分别形成有色阻层19或平坦层；
具体地，采用COA工艺使像素电极15与绝缘层18之间形成有色阻层19，采用Organic平坦层工艺使像素电极15与绝缘层18之间形成有平坦层。
S70：在数据线12与扫描线11绝缘交叉的一侧形成像素电极15；
其中，像素电极15设于数据线12与扫描线11绝缘交叉处111的一侧，延伸部131设于数据线12与扫描线11绝缘交叉处111的另一侧，具体地，延伸部131与连接线132的间隔交迭处与像素电极15不重叠且间隔设置，使得在暗点化作业时，减少激光对像素电极15的影响。
请参阅图6，图6是本发明的液晶显示器暗点化作业方法流程图，该方法是对上述的液晶显示器进行暗点化作业，具体步骤如下：
S110：将数据线12与薄膜电晶体管14的源极的连接线132段开；
S120：将延伸部131与薄膜电晶体管14的源极导通。
其中，可采用激光等技术照射延伸部131与连接线132重叠处，从而使得延伸部131与薄膜电晶体管14的源极导通。
本发明的液晶显示装置、液晶显示器及其制作方法和暗点作业方法在下共电极13设有延伸部131，数据线12和薄膜电晶体管14的源极的连接线132与延伸部131间隔交迭，使得在暗点化作业时，将数据线12和源极的连接线132段开，并用激光将延伸部131与源极的连接线132导通，使得像素电极15的电压与下共电极13的电压相等并进一步与上共电极的电压相等，从而使得对应的液晶分子不发生偏转导光以完成暗点化作业，操作简便，暗点化作业难度低，避免暗点化作业导致的碎亮点问题，提高产品修复率及良率。
以上所述仅为本发明的实施方式，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (19)

  1. 一种液晶显示装置，其中，所述液晶显示装置包括液晶显示器，所述液晶显示器包括：
    上基板，设有上共电极；
    下基板，与所述上基板相对设置，设有下共电极；
    液晶层，设于所述上基板和所述下基板之间；
    所述下基板还设有扫描线、数据线、像素电极以及薄膜电晶体管，所述薄膜电晶体管的栅极与扫描线连接，所述薄膜电晶体管的源极与数据线连接，所述薄膜电晶体管的漏极与像素电极连接，所述像素电极设于所述数据线与所述扫描线绝缘交叉处的一侧，所述延伸部设于所述数据线与所述扫描线绝缘交叉处的另一侧；
    其中，所述下共电极设有延伸部，所述数据线和所述薄膜电晶体管的源极的连接线与所述延伸部间隔交迭，在暗点化作业时，将所述数据线和所述源极的连接线段开，并所述延伸部与所述源极的连接线导通。
  2. 根据权利要求1所述的液晶显示装置，其中，所述延伸部绝缘间隔交迭于所述连接线的上方或下方。
  3. 根据权利要求1所述的液晶显示装置，其中，所述下基板还设有使所述扫描线、所述数据线、所述像素电极以及所述薄膜电晶体管彼此绝缘的绝缘层。
  4. 根据权利要求3所述的液晶显示器，其中，所述下基板采用COA工艺或Organic平坦层工艺形成。
  5. 根据权利要求3所述的液晶显示器，其中，所述像素电极与所述绝缘层之间设有色阻层或平坦层。
  6. 根据权利要求1所述的液晶显示装置，其中，所述像素电极与所述上共电极形成储存电容。
  7. 根据权利要求1所述的液晶显示装置，其中，所述像素电极与所述下共电极形成液晶电容。
  8. 一种液晶显示器，其中，所述液晶显示器包括：
    上基板，设有上共电极；
    下基板，与所述上基板相对设置，设有下共电极；
    液晶层，设于所述上基板和所述下基板之间；
    所述下基板还设有扫描线、数据线、像素电极以及薄膜电晶体管，所述薄膜电晶体管的栅极与扫描线连接，所述薄膜电晶体管的源极与数据线连接，所述薄膜电晶体管的漏极与像素电极连接；
    其中，所述下共电极设有延伸部，所述数据线和所述薄膜电晶体管的源极的连接线与所述延伸部间隔交迭，在暗点化作业时，将所述数据线和所述源极的连接线段开，并所述延伸部与所述源极的连接线导通。
  9. 根据权利要求8所述的液晶显示器，其中，所述延伸部绝缘间隔交迭于所述连接线的上方或下方。
  10. 根据权利要求8所述的液晶显示器，其中，所述下基板还设有使所述扫描线、所述数据线、所述像素电极以及所述薄膜电晶体管彼此绝缘的绝缘层。
  11. 根据权利要求10所述的液晶显示器，其中，所述下基板采用COA工艺或Organic平坦层工艺形成。
  12. 根据权利要求10所述的液晶显示器，其中，所述像素电极与所述绝缘层之间设有色阻层或平坦层。
  13. 根据权利要求8所述的液晶显示器，其中，所述像素电极与所述上共电极形成储存电容。
  14. 根据权利要求8所述的液晶显示器，其中，所述像素电极与所述下共电极形成液晶电容。
  15. 根据权利要求8所述的液晶显示器，其中，所述像素电极设于所述数据线与所述扫描线绝缘交叉处的一侧，所述延伸部设于所述数据线与所述扫描线绝缘交叉处的另一侧。
  16. 一种液晶显示器的制作方法，其中，所述液晶显示器的制作方法包括步骤如下：
    在所述下基板形成多条平行间隔的下共电极，其中所述下共电极具有延伸部；
    在所述下基板形成多条平行间隔数据线；
    在所述下基板形成多条平行间隔扫描线，其中，多条所述扫描线与多条所述数据线绝缘交错形成阵列方形；
    在所述方形的一角形成薄膜电晶体管，其中，所述薄膜电晶体管的栅极与扫描线连接，所述薄膜电晶体管的源极与数据线连接，所述薄膜电晶体管的漏极与像素电极连接，所述数据线和所述薄膜电晶体管的源极的连接线与所述延伸部间隔交迭；
    在所述数据线与所述扫描线绝缘交叉处的一侧形成像素电极。
  17. 根据权利要求16所述的液晶显示装置，其中，所述在所述数据线与所述扫描线绝缘交叉的一侧形成像素电极步骤之前还包括：
    在所述下基板设置使所述扫描线、所述数据线、所述像素电极以及所述薄膜电晶体管彼此绝缘的绝缘层。
  18. 根据权利要求17所述的液晶显示装置，其中，所述下基板设置使所述扫描线、所述数据线、所述像素电极以及所述薄膜电晶体管彼此绝缘的绝缘层步骤之后还包括：
    采用COA工艺或Organic平坦层工艺在所述像素电极与所述绝缘层之间分别形成有色阻层或平坦层。
  19. 一种液晶显示器暗点化作业方法，其中，对权利要求15所述的液晶显示器进行暗点化作业，所述液晶显示器进行暗点化作业方法包括步骤如下：
    将数据线与所述薄膜电晶体管的源极的连接线段开；
    将所述延伸部与所述薄膜电晶体管的源极导通。
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