CN104597679B - 阵列基板及其断线修补方法 - Google Patents

阵列基板及其断线修补方法 Download PDF

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CN104597679B
CN104597679B CN201510074075.9A CN201510074075A CN104597679B CN 104597679 B CN104597679 B CN 104597679B CN 201510074075 A CN201510074075 A CN 201510074075A CN 104597679 B CN104597679 B CN 104597679B
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CN104597679A (zh
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李珊
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Abstract

本发明提供一种阵列基板及其断线修补方法，通过在阵列基板表面对应栅极扫描线与源漏极数据线的上方设置数个开口，所述开口通过钝化层沉积于有机层的通孔处形成，使得本发明的阵列基板在进行断线修补时，可以直接在断线处两端的开口之间通过镭射化学气相沉积形成金属长线，使断开的栅极扫描线或源漏极数据线恢复连接，该修补方法省去了镭射去除有机层的工序，节省了断线修补时间，有效地减少去除有机层时的机台镭射损耗，提高了断线修补效率和修补成功率，进而提高液晶面板产品的显示品质。

Description

阵列基板及其断线修补方法
技术领域
本发明涉及显示技术领域，尤其涉及一种阵列基板及该阵列基板的断线修补方法。
背景技术
随着显示技术的发展，液晶显示器(Liquid Crystal Display，LCD)等平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。
现有市场上的液晶显示装置大部分为背光型液晶显示器，其包括液晶显示面板及背光模组(backlight module)。液晶显示面板的工作原理是在两片平行的玻璃基板当中放置液晶分子，两片玻璃基板中间有许多垂直和水平的细小电线，通过通电与否来控制液晶分子改变方向，将背光模组的光线折射出来产生画面。
通常液晶显示面板由彩膜基板(CF，Color Filter)、薄膜晶体管基板(TFT，ThinFilm Transistor)、夹于彩膜基板与薄膜晶体管基板之间的液晶(LC，Liquid Crystal)及密封胶框(Sealant)组成，其成型工艺一般包括：前段阵列(Array)制程(薄膜、黄光、蚀刻及剥膜)、中段成盒(Cell)制程(TFT基板与CF基板贴合)及后段模组组装制程(驱动IC与印刷电路板压合)。其中，前段Array制程主要是形成TFT基板，以便于控制液晶分子的运动；中段Cell制程主要是在TFT基板与CF基板之间添加液晶；后段模组组装制程主要是驱动IC压合与印刷电路板的整合，进而驱动液晶分子转动，显示图像。
随着液晶面板技术的不断发展，越来越多的新技术应用在薄膜晶体管阵列基板上，如平面转换(In-Plane Switching，IPS)，边缘场开关技术(Fringe Field Switching，FFS)，色彩滤镜矩阵(Color Filter On Array，COA)等技术。这些技术对显示基板的平坦度要求比较高，通常需要在阵列基板上沉积一层较厚的有机层如色阻层、平坦层等。在阵列基板制作过程中，由于各种因素的影响，可能导致金属导线包括扫描线和数据线存在断线的情况。为了修补此类阵列基板的断线，目前是通过断线修补机先去除有机层和透明电极层后，再进行修补长线，断线修补耗时长，当有机层无法完全去除时，可能会影响产品的断线修补成功率。
发明内容
本发明的目的在于提供一种阵列基板，所述阵列基板表面对应栅极扫描线与源漏极数据线的上方设置数个开口，所述开口形成于有机层的通孔处，使得本发明的阵列基板在进行断线修补时，可以直接在断线处两端的开口之间利用镭射化学气相沉积形成金属长线进行修复，省去了镭射去除有机层的工序，提高断线修补效率和修补成功率。
本发明的目的还在于提供一种阵列基板的断线修补方法，通过直接在断线处两端的开口之间镭射化学气相沉积金属长线，使得断开的栅极扫描线或源漏极数据线恢复连接，省去了镭射去除有机层的工序，提高了断线修补效率和修补成功率，同时有效地减少去除有机层时的机台镭射损耗，进而提高液晶面板产品的显示品质。
为实现上述目的，本发明提供一种阵列基板，其包括：基板，位于所述基板上的栅极扫描线，位于所述栅极扫描线和基板上的栅极绝缘层，位于所述栅极绝缘层上的源漏极数据线，位于所述源漏极数据线与栅极绝缘层上的第一钝化层，位于所述第一钝化层上的有机层，以及位于所述有机层与第一钝化层上的第二钝化层；
其中，所述栅极扫描线与源漏极数据线在基板上垂直交叉排列，所述有机层上对应于栅极扫描线与源漏极数据线的交叉口处形成有第一通孔，所述第二钝化层沉积于该第一通孔处形成第一开口。
所述第一开口的大小为15μm×15μm。
所述有机层为色阻层或者平坦层；所述第一钝化层和第二钝化层的材料为无机材料；所述有机层的厚度大于所述第一钝化层和第二钝化层的厚度。
所述阵列基板上对应源漏极数据线上两相邻的第一开口之间还设有第二开口，所述第二开口通过所述第二钝化层沉积于有机层上的第二通孔处形成。
所述阵列基板上对应栅极扫描线上两相邻的第一开口之间还设有第三开口，所述第三开口通过所述第二钝化层沉积于有机层上的第三通孔处形成。
所述第二开口和第三开口的大小均为7μm×7μm。
本发明还提供一种阵列基板的断线修补方法，其中，所述阵列基板包括：基板，位于所述基板上的栅极扫描线，位于所述栅极扫描线和基板上的栅极绝缘层，位于所述栅极绝缘层上的源漏极数据线，位于所述源漏极数据线与栅极绝缘层上的第一钝化层，位于所述第一钝化层上的有机层，以及位于所述有机层与第一钝化层上的第二钝化层；
其中，所述栅极扫描线与源漏极数据线在基板上垂直交叉排列，所述有机层上对应于栅极扫描线与源漏极数据线的每一交叉口处形成有第一通孔，所述第二钝化层沉积于该第一通孔处形成第一开口；
当所述阵列基板上的栅极扫描线或源漏极数据线发生断线时，通过在栅极扫描线或源漏极数据线上位于断线处两端的第一开口之间利用镭射化学气相沉积形成金属长线，使得断开的栅极扫描线或源漏极数据线恢复连接。
所述阵列基板上对应源漏极数据线上两相邻的第一开口之间还设有第二开口，所述第二开口通过所述第二钝化层沉积于有机层上的第二通孔处形成；
当所述阵列基板上的源漏极数据线发生断线，且所述源漏极数据线上两相邻的第一开口之间的距离较大，超过机台断线修补能力时，在断线处两端的第一开口和第二开口之间通过镭射化学气相沉积形成金属长线，使得断开的源漏极数据线恢复连接。
所述阵列基板上对应栅极扫描线上两相邻的第一开口之间还设有第三开口，所述第三开口通过所述第二钝化层沉积于有机层上的第三通孔处形成；
当栅极扫描线发生断线，且所述栅极扫描线上两相邻的第一开口之间的距离较大，超过机台断线修补能力时，在断线处两端的第一开口和第三开口之间通过镭射化学气相沉积形成金属长线，使得断开的栅极扫描线恢复连接。
所述金属长线为直线，所述金属长线的材料为六羰基钨。
本发明的有益效果：本发明提供一种阵列基板及其断线修补方法，通过在阵列基板表面对应栅极扫描线与源漏极数据线的上方设置数个开口，所述开口通过所述钝化层沉积于有机层的通孔处形成，使得本发明的阵列基板在进行断线修补时，可以直接在断线处两端的开口之间通过镭射化学气相沉积形成金属长线，使得断开的栅极扫描线或源漏极数据线恢复连接，该修补方法省去了镭射去除有机层的工序，节省了断线修补时间，有效地减少了去除有机层时的机台镭射损耗，提高了断线修补效率和修补成功率，进而提高液晶面板产品的显示品质。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为本发明阵列基板第一实施例的结构示意图；
图2为图1所示阵列基板上第一开口处沿A-A线的剖面图；
图3为图1所示阵列基板上第一开口处沿B-B线的剖面图；
图4为采用镭射化学气相沉积金属长线的方式对图1所示的阵列基板进行栅极扫描线断线修补的示意图；
图5为采用镭射化学气相沉积金属长线的方式对图1所示的阵列基板进行源漏极数据线断线修补的示意图；
图6为本发明阵列基板第二实施例的结构示意图；
图7为采用镭射化学气相沉积金属长线的方式对图6所示的阵列基板进行源漏极数据线断线修补的示意图；
图8为本发明阵列基板第三实施例的结构示意图；
图9为采用镭射化学气相沉积金属长线的方式对图8所示的阵列基板进行栅极扫描线断线修补的示意图；
图10为本发明阵列基板第四实施例的结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1-图3，为本发明阵列基板的第一实施例，所述阵列基板包括：基板1，位于所述基板1之上的栅极扫描线2，位于所述栅极扫描线2和基板1之上的栅极绝缘层4，位于所述栅极绝缘层4之上的源漏极数据线5，位于所述源漏极数据线5与栅极绝缘层4之上的第一钝化层8，位于所述第一钝化层8之上的有机层9，以及位于所述有机层9与第一钝化层8之上的第二钝化层10。
具体的，所述有机层9为色阻层或者平坦层；所述第一钝化层8和第二钝化层10的材料为无机材料；所述有机层9的厚度大于所述第一钝化层8和第二钝化层10的厚度。
具体的，所述栅极扫描线2与源漏极数据线5在基板1上垂直交叉排列，所述有机层9上对应于栅极扫描线2与源漏极数据线5的每一交叉口处形成有第一通孔，所述第二钝化层10沉积于第一通孔处形成第一开口11，如图2和图3所示，所述第一开口11处阵列基板的结构包括基板1、栅极扫描线2、栅极绝缘层4、源漏极数据线5、第一钝化层8、以及第二钝化层10，即与开口11处正对的基板1上不设置有机层9。
优选的，所述第一开口11的大小为15μm×15μm。
如图4所示，当所述阵列基板上的栅极扫描线2因制程不良导致断线时，在栅极扫描线2上位于断线处两端的第一开口11之间，通过镭射化学气相沉积形成金属长线16，使得断开的栅极扫描线2恢复连接。
如图5所示，当所述阵列基板上的源漏极数据线5因制程不良导致断线时，在源漏极数据线5上位于断线处两端的第一开口11之间，通过镭射化学气相沉积形成金属长线16，使得断开的源漏极数据线5恢复连接。
具体的，该金属长线16为直线，该金属长线16的材料为六羰基钨。
上述阵列基板的断线修补方法，由于所述阵列基板在第一开口11处所述栅极扫描线2和源漏极数据线5的上方均未设置有机层9，从而省去了镭射去除有机层9的工序，节省了断线修补时间，提高机台的稼动率，可有效地提高断线修补效率和修补成功率，进而提高液晶面板产品的显示品质。
请参阅图6，为本发明阵列基板的第二实施例，与第一实施例相比，其不同之处在于，所述阵列基板上对应源漏极数据线5上两相邻的第一开口11之间设置第二开口13，所述第二开口13通过所述第二钝化层10沉积于有机层9上的第二通孔处形成，所述阵列基板位于第二开口13处的结构包括基板1、栅极绝缘层4、源漏极数据线5、第一钝化层8、以及第二钝化层10。
优选的，所述第二开口13的大小为7μm×7μm，所述第二开口13位于源漏极数据线5上两相邻的第一开口11之间的中间位置。
如图7所示，当源漏极数据线5发生断线，且所述源漏极数据线5上两相邻的第一开口11之间的距离较大，超过机台断线修补能力时，通过在断线处两端的第一开口11和第二开口13之间利用镭射化学气相沉积形成金属长线16，使得断开的源漏极数据线5恢复连接，与图8所示的断线修补方法相比，该修补方法减少了镭射化学气相沉积金属长线的路径，节省了断线修补时间，提高机台的稼动率。
请参阅图8，为本发明阵列基板的第三实施例，与第一实施例相比，其不同之处在于，所述阵列基板上对应栅极扫描线2上两相邻的第一开口11之间设置第三开口14，所述第三开口14通过所述第二钝化层10沉积于有机层9上的第三通孔处形成，所述阵列基板位于第三开口14处的结构包括基板1、栅极扫描线2、栅极绝缘层4、第一钝化层8、以及第二钝化层10。
优选的，所述第三开口14的大小为7μm×7μm，所述第三开口14位于栅极扫描线2上两相邻的第一开口11之间的中间位置。
如图9所示，当栅极扫描线2发生断线，且所述栅极扫描线2上两相邻的第一开口11之间的距离较大，超过机台断线修补能力时，通过在断线位置两端的第一开口11和第三开口14之间利用镭射化学气相沉积形成金属长线16，使得断开的栅极扫描线2恢复连接，与图7所示的断线修补方法相比，该方法减少了镭射化学气相沉积金属长线的路径，节省了断线修补时间，提高机台的稼动率。
请参阅图10，为本发明阵列基板的第四实施例，与第一实施例相比，其不同之处在于，所述阵列基板上对应源漏极数据线5上两相邻的第一开口11之间设置第二开口13，所述第二开口13通过所述第二钝化层10沉积于有机层9上的第二通孔处形成，所述第二开口13处阵列基板的结构包括基板1、栅极绝缘层4、源漏极数据线5、第一钝化层8、以及第二钝化层10；所述阵列基板上对应栅极扫描线2上两相邻的第一开口11之间设置第三开口14，所述第三开口14通过所述第二钝化层10沉积于有机层9上的第三通孔处形成，所述第三开口14处阵列基板的结构包括基板1、栅极扫描线2、栅极绝缘层4、第一钝化层8、以及第二钝化层10。
优选的，所述第二开口13的大小为7μm×7μm，所述第二开口13位于源漏极数据线5上两相邻的第一开口11之间的中间位置；所述第三开口14的大小为7μm×7μm，所述第三开口14位于栅极扫描线2上两相邻的第一开口11之间的中间位置。
当源漏极数据线5发生断线，且所述源漏极数据线5上两相邻的第一开口11之间的距离较大，超过机台断线修补能力时，在断线处两端的第一开口11和第二开口13之间通过镭射化学气相沉积形成金属长线16，使得断开的源漏极数据线5恢复连接；
当栅极扫描线2发生断线，且所述栅极扫描线2上两相邻的第一开口11之间的距离较大，超过机台断线修补能力时，在断线位置两端的第一开口11和第三开口14之间通过镭射化学气相沉积形成金属长线16，使得断开的栅极扫描线2恢复连接。
综上所述，本发明提供一种阵列基板及其断线修补方法，通过在阵列基板表面对应栅极扫描线与源漏极数据线的上方设置数个开口，所述开口通过所述钝化层沉积于有机层的通孔处形成，使得本发明的阵列基板在进行断线修补时，可以直接在断线处两端的开口之间镭射化学气相沉积金属长线，使得断开的栅极扫描线或源漏极数据线恢复连接，该修补方法省去了镭射去除有机层的工序，节省了断线修补时间，有效地减少去除有机层时的机台镭射损耗，提高了断线修补效率和修补成功率，进而提高液晶面板产品的显示品质。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (11)

1.一种阵列基板，其特征在于，包括：基板(1)，位于所述基板(1)上的栅极扫描线(2)，位于所述栅极扫描线(2)和基板(1)上的栅极绝缘层(4)，位于所述栅极绝缘层(4)上的源漏极数据线(5)，位于所述源漏极数据线(5)与栅极绝缘层(4)上的第一钝化层(8)，位于所述第一钝化层(8)上的有机层(9)，以及位于所述有机层(9)与第一钝化层(8)上的第二钝化层(10)；
其中，所述栅极扫描线(2)与源漏极数据线(5)在基板(1)上垂直交叉排列，所述有机层(9)上对应于栅极扫描线(2)与源漏极数据线(5)的交叉口处形成有第一通孔，所述第二钝化层(10)沉积于该第一通孔处形成第一开口(11)；
所述第一开口(11)用于当所述阵列基板上的栅极扫描线(2)或源漏极数据线(5)发生断线时，通过在栅极扫描线(2)或源漏极数据线(5)上位于断线处两端的第一开口(11)之间利用镭射化学气相沉积形成金属长线(16)，使得断开的栅极扫描线(2)或源漏极数据线(5)恢复连接。
2.如权利要求1所述的阵列基板，其特征在于，所述第一开口(11)的大小为15μm×15μm。
3.如权利要求1所述的阵列基板，其特征在于，所述有机层(9)为色阻层或者平坦层；所述第一钝化层(8)和第二钝化层(10)的材料为无机材料；所述有机层(9)的厚度大于所述第一钝化层(8)和第二钝化层(10)的厚度。
4.如权利要求1所述的阵列基板，其特征在于，所述阵列基板上对应源漏极数据线(5)上两相邻的第一开口(11)之间还设有第二开口(13)，所述第二开口(13)通过所述第二钝化层(10)沉积于有机层(9)上的第二通孔处形成。
5.如权利要求1所述的阵列基板，其特征在于，所述阵列基板上对应栅极扫描线(2)上两相邻的第一开口(11)之间还设有第三开口(14)，所述第三开口(14)通过所述第二钝化层(10)沉积于有机层(9)上的第三通孔处形成。
6.如权利要求4所述的阵列基板，其特征在于，所述第二开口(13)的大小为7μm×7μm。
7.如权利要求5所述的阵列基板，其特征在于，所述第三开口(14)的大小为7μm×7μm。
8.一种阵列基板的断线修补方法，其特征在于，所述阵列基板包括：基板(1)，位于所述基板(1)上的栅极扫描线(2)，位于所述栅极扫描线(2)和基板(1)上的栅极绝缘层(4)，位于所述栅极绝缘层(4)上的源漏极数据线(5)，位于所述源漏极数据线(5)与栅极绝缘层(4)上的第一钝化层(8)，位于所述第一钝化层(8)上的有机层(9)，以及位于所述有机层(9)与第一钝化层(8)上的第二钝化层(10)；
其中，所述栅极扫描线(2)与源漏极数据线(5)在基板(1)上垂直交叉排列，所述有机层(9)上对应于栅极扫描线(2)与源漏极数据线(5)的每一交叉口处形成有第一通孔，所述第二钝化层(10)沉积于该第一通孔处形成第一开口(11)；
当所述阵列基板上的栅极扫描线(2)或源漏极数据线(5)发生断线时，通过在栅极扫描线(2)或源漏极数据线(5)上位于断线处两端的第一开口(11)之间利用镭射化学气相沉积形成金属长线(16)，使得断开的栅极扫描线(2)或源漏极数据线(5)恢复连接。
9.如权利要求8所述的阵列基板的断线修补方法，其特征在于，所述阵列基板上对应源漏极数据线(5)上两相邻的第一开口(11)之间还设有第二开口(13)，所述第二开口(13)通过所述第二钝化层(10)沉积于有机层(9)上的第二通孔处形成；
当所述阵列基板上的源漏极数据线(5)发生断线，且所述源漏极数据线(5)上两相邻的第一开口(11)之间的距离较大，超过机台断线修补能力时，在断线处两端的第一开口(11)和第二开口(13)之间通过镭射化学气相沉积形成金属长线(16)，使得断开的源漏极数据线(5)恢复连接。
10.如权利要求8所述的阵列基板的断线修补方法，其特征在于，所述阵列基板上对应栅极扫描线(2)上两相邻的第一开口(11)之间还设有第三开口(14)，所述第三开口(14)通过所述第二钝化层(10)沉积于有机层(9)上的第三通孔处形成；
当栅极扫描线(2)发生断线，且所述栅极扫描线(2)上两相邻的第一开口(11)之间的距离较大，超过机台断线修补能力时，在断线处两端的第一开口(11)和第三开口(14)之间通过镭射化学气相沉积形成金属长线(16)，使得断开的栅极扫描线(2)恢复连接。
11.如权利要求8-10任意一项所述的阵列基板的断线修补方法，其特征在于，所述金属长线(16)为直线，所述金属长线(16)的材料为六羰基钨。
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