WO2016127481A1 - 阵列基板及其断线修补方法 - Google Patents

阵列基板及其断线修补方法 Download PDF

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Publication number
WO2016127481A1
WO2016127481A1 PCT/CN2015/075685 CN2015075685W WO2016127481A1 WO 2016127481 A1 WO2016127481 A1 WO 2016127481A1 CN 2015075685 W CN2015075685 W CN 2015075685W WO 2016127481 A1 WO2016127481 A1 WO 2016127481A1
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Prior art keywords
array substrate
layer
line
opening
source
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PCT/CN2015/075685
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English (en)
French (fr)
Inventor
李珊
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深圳市华星光电技术有限公司
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Priority to US14/781,313 priority Critical patent/US10261374B2/en
Publication of WO2016127481A1 publication Critical patent/WO2016127481A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1306—Details
    • G02F1/1309—Repairing; Testing
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133357—Planarisation layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G02F1/136263—Line defects

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an array substrate and a wire break repair method of the array substrate.
  • LCDs liquid crystal displays
  • Various consumer electronic products such as digital assistants, digital cameras, notebook computers, and desktop computers have become mainstream in display devices.
  • liquid crystal display devices which include a liquid crystal display panel and a backlight module.
  • the working principle of the liquid crystal display panel is to place liquid crystal molecules in two parallel glass substrates. There are many vertical and horizontal small wires between the two glass substrates, and the liquid crystal molecules are controlled to change direction by energizing or not, and the light of the backlight module is changed. Refracted to produce a picture.
  • a liquid crystal display panel consists of a color filter substrate (CF), a thin film transistor substrate (TFT, Thin Film Transistor), a liquid crystal (LC) sandwiched between a color filter substrate and a thin film transistor substrate, and a sealant frame ( Sealant), the molding process generally includes: front array (Array) process (film, yellow, etching and stripping), middle cell (Cell) process (TFT substrate and CF substrate bonding) and rear module assembly Process (drive IC and printed circuit board is pressed).
  • Array array
  • Cell middle cell
  • rear module assembly Process drive IC and printed circuit board is pressed.
  • the front Array process mainly forms a TFT substrate to control the movement of liquid crystal molecules; the middle Cell process mainly adds liquid crystal between the TFT substrate and the CF substrate; the rear module assembly process is mainly to drive the IC to press and print the circuit.
  • the integration of the plates drives the liquid crystal molecules to rotate and display images.
  • IPS In-Plane Switching
  • FFS Fringe Field Switching
  • COA Color Filter On Array
  • the organic layer and the transparent electrode layer are removed first by the wire repairing machine, and then the long line is repaired, and the wire repairing takes a long time, when the organic layer cannot be completely completed. When removed, it may affect the success rate of the product's wire break repair.
  • An object of the present invention is to provide an array substrate having a plurality of openings disposed above the gate scan line and the source and drain data lines, the openings being formed at the through holes of the organic layer, so that the present invention
  • the array substrate When the array substrate is repaired by wire breakage, it can be directly repaired by laser chemical vapor deposition to form a metal long line between the openings at both ends of the wire breakage, eliminating the process of removing the organic layer by laser, improving the repair efficiency and repair success rate of the wire breakage.
  • the connection eliminates the process of removing the organic layer by laser, improves the repair efficiency of the wire breakage and the success rate of the repair, and effectively reduces the laser loss of the machine when the organic layer is removed, thereby improving the display quality of the liquid crystal panel product.
  • the present invention provides an array substrate comprising: a substrate, a gate scan line on the substrate, a gate insulating layer on the gate scan line and the substrate, and the gate a source and drain data line on the insulating layer, a first passivation layer on the source and drain data lines and the gate insulating layer, an organic layer on the first passivation layer, and an organic layer And a second passivation layer on the first passivation layer;
  • the gate scan line and the source and drain data lines are vertically arranged on the substrate, and a first via hole is formed on the organic layer at an intersection corresponding to the gate scan line and the source and drain data lines.
  • the second passivation layer is deposited on the first via to form a first opening.
  • the size of the first opening is 15 ⁇ m ⁇ 15 ⁇ m.
  • the organic layer is a color resist layer or a flat layer; the material of the first passivation layer and the second passivation layer is an inorganic material; the organic layer has a thickness greater than the first passivation layer and the second passivation layer The thickness of the layer.
  • a second opening is further disposed between two adjacent first openings on the corresponding source and drain data lines on the array substrate, and the second opening is deposited on the organic layer by the second passivation layer Formed at the hole.
  • a third opening is further disposed between two adjacent first openings on the corresponding gate scan line of the array substrate, and the third opening is deposited on the third via hole of the organic layer through the second passivation layer Formed at the place.
  • the sizes of the second opening and the third opening are both 7 ⁇ m ⁇ 7 ⁇ m.
  • the present invention also provides an array substrate comprising: a substrate, a gate scan line on the substrate, a gate insulating layer on the gate scan line and the substrate, and the gate insulating layer a source drain data line, a first passivation layer on the source drain data line and the gate insulating layer, an organic layer on the first passivation layer, and an organic layer on the first passivation layer a second passivation layer on a passivation layer;
  • the gate scan line and the source and drain data lines are vertically arranged on the substrate, and a first via hole is formed on the organic layer at an intersection corresponding to the gate scan line and the source and drain data lines.
  • the size of the first opening is 15 ⁇ m ⁇ 15 ⁇ m;
  • the organic layer is a color resist layer or a flat layer; the material of the first passivation layer and the second passivation layer is an inorganic material; the organic layer has a thickness greater than the first passivation layer and the second layer The thickness of the passivation layer.
  • the invention also provides a method for repairing a wire breakage of an array substrate, wherein the array substrate comprises: a substrate, a gate scan line on the substrate, a gate insulating layer on the gate scan line and the substrate a source and drain data line on the gate insulating layer, a first passivation layer on the source and drain data lines and the gate insulating layer, and an organic layer on the first passivation layer. And a second passivation layer on the organic layer and the first passivation layer;
  • the gate scan line and the source and drain data lines are vertically arranged on the substrate, and the first via hole is formed on each of the intersections of the organic layer corresponding to the gate scan line and the source and drain data lines. Depositing the second passivation layer at the first via hole to form a first opening;
  • the laser chemical vapor phase is used between the first openings at both ends of the broken line on the gate scan line or the source/drain data line.
  • the deposition forms a long metal line such that the broken gate scan line or source drain data line is restored.
  • a second opening is further disposed between two adjacent first openings on the corresponding source and drain data lines on the array substrate, and the second opening is deposited on the organic layer by the second passivation layer Formed at the hole;
  • a long metal line is formed by laser chemical vapor deposition between the first opening and the second opening at both ends of the line, so that the disconnected source and drain data lines are restored.
  • a third opening is further disposed between two adjacent first openings on the corresponding gate scan line of the array substrate, and the third opening is deposited on the third via hole of the organic layer through the second passivation layer Formed at
  • the long metal wire is a straight line, and the material of the long metal wire is tungsten hexacarbonyl.
  • the present invention provides an array substrate and a wire break repair method thereof, wherein a plurality of openings are provided above a corresponding gate scan line and a source/drain data line on a surface of the array substrate, and the opening passes through the blunt
  • the deposition layer is formed at the through hole of the organic layer, so that the array substrate of the present invention can directly form a long metal line by laser chemical vapor deposition between the openings at both ends of the broken line when the wire is repaired, so that the broken gate is broken.
  • the pole scanning line or the source-drain data line is restored.
  • the repairing method saves the process of removing the organic layer by laser, saves the time of wire-cut repairing, effectively reduces the laser loss of the machine when the organic layer is removed, and improves the wire breakage. Repair efficiency and repair success rate, thereby improving the display quality of LCD panel products.
  • FIG. 1 is a schematic structural view of a first embodiment of an array substrate according to the present invention.
  • FIG. 2 is a cross-sectional view taken along line A-A of the first opening on the array substrate shown in FIG. 1;
  • FIG. 3 is a cross-sectional view taken along line B-B of the first opening on the array substrate shown in FIG. 1;
  • FIG. 4 is a schematic diagram of performing gate scan line break repair on the array substrate shown in FIG. 1 by using a laser chemical vapor deposition metal long line;
  • FIG. 5 is a schematic diagram of performing source-drain data line break repair on the array substrate shown in FIG. 1 by using a laser chemical vapor deposition metal long line;
  • FIG. 6 is a schematic structural view of a second embodiment of an array substrate according to the present invention.
  • FIG. 7 is a schematic diagram of performing source and drain data line disconnection repair on the array substrate shown in FIG. 6 by using a laser chemical vapor deposition metal long line;
  • FIG. 8 is a schematic structural view of a third embodiment of an array substrate according to the present invention.
  • FIG. 9 is a schematic diagram of performing gate scan line break repair on the array substrate shown in FIG. 8 by using a laser chemical vapor deposition metal long line;
  • FIG. 10 is a schematic structural view of a fourth embodiment of an array substrate according to the present invention.
  • a first embodiment of an array substrate includes: a substrate 1 , a gate scan line 2 above the substrate 1 , and the gate scan line 2 . And a gate insulating layer 4 over the substrate 1, a source-drain data line 5 over the gate insulating layer 4, and a first over the source-drain data line 5 and the gate insulating layer 4.
  • the organic layer 9 is a color resist layer or a flat layer; the materials of the first passivation layer 8 and the second passivation layer 10 are inorganic materials; the thickness of the organic layer 9 is greater than the first blunt The thickness of the layer 8 and the second passivation layer 10.
  • the gate scan line 2 and the source and drain data lines 5 are vertically arranged on the substrate 1 , and the organic layer 9 corresponds to each intersection of the gate scan line 2 and the source and drain data lines 5 .
  • a first via hole is formed, and the second passivation layer 10 is deposited on the first via hole to form a first opening 11.
  • the structure of the array substrate at the first opening 11 includes The substrate 1, the gate scan line 2, the gate insulating layer 4, the source and drain data lines 5, the first passivation layer 8, and the second passivation layer 10, that is, are not disposed on the substrate 1 facing the opening 11 Organic layer 9.
  • the size of the first opening 11 is 15 ⁇ m ⁇ 15 ⁇ m.
  • the source/drain data line 5 on the array substrate is disconnected due to a poor process, the source/drain data line 5 is located between the first openings 11 at both ends of the broken line, and passes through the laser. Chemical vapor deposition forms a long metal line 16 such that the broken source and drain data lines 5 are restored.
  • the long metal wire 16 is a straight line, and the material of the long metal wire 16 is tungsten hexacarbonyl.
  • the laser removal organic is omitted.
  • the process of the layer 9 saves the repair time of the wire breakage and improves the utilization rate of the machine, thereby effectively improving the wire-cut repairing efficiency and the repair success rate, thereby improving the display quality of the liquid crystal panel product.
  • a second embodiment of the array substrate of the present invention is different from the first embodiment in that two adjacent first openings on the array substrate correspond to the source and drain data lines 5 .
  • a second opening 13 is formed between the second openings 13 formed by the second passivation layer 10 deposited on the second via hole on the organic layer 9, and the array substrate is located at the second opening 13 Package
  • the substrate 1, the gate insulating layer 4, the source and drain data lines 5, the first passivation layer 8, and the second passivation layer 10 are included.
  • the size of the second opening 13 is 7 ⁇ m ⁇ 7 ⁇ m, and the second opening 13 is located at an intermediate position between the two adjacent first openings 11 on the source/drain data line 5.
  • the repair method reduces the path of the long-line laser chemical vapor deposition metal, saves the repair time of the wire breakage, and improves the utilization rate of the machine.
  • a third embodiment of an array substrate according to the present invention is different from the first embodiment in that two adjacent first openings 11 on the corresponding gate scanning lines 2 on the array substrate are shown.
  • a third opening 14 is formed between the third opening 14 and the third via hole deposited on the organic layer 9 by the second passivation layer 10, and the structure of the array substrate at the third opening 14 includes The substrate 1, the gate scan line 2, the gate insulating layer 4, the first passivation layer 8, and the second passivation layer 10.
  • the third opening 14 has a size of 7 ⁇ m ⁇ 7 ⁇ m, and the third opening 14 is located at an intermediate position between the two adjacent first openings 11 on the gate scan line 2.
  • a metal long line 16 is formed by laser chemical vapor deposition between the first opening 11 and the third opening 14 at both ends of the broken position, so that the broken gate scanning line 2 is restored, which is the same as the disconnection repairing method shown in FIG. Compared with this method, the path of the laser chemical vapor deposition metal long line is reduced, the time for repairing the wire breakage is saved, and the utilization rate of the machine is improved.
  • FIG. 10 is a fourth embodiment of the array substrate of the present invention, which is different from the first embodiment in that two adjacent first openings on the source and drain data lines 5 on the array substrate are provided.
  • a second opening 13 is formed between the second openings 13 formed by the second passivation layer 10 deposited on the second via hole on the organic layer 9, and the structure of the array substrate at the second opening 13 includes a substrate 1, a gate insulating layer 4, a source and drain data line 5, a first passivation layer 8, and a second passivation layer 10; on the array substrate, two adjacent first openings on the gate scan line 2
  • a third opening 14 is formed between the first opening 14 and the third opening 14 is formed by the second passivation layer 10 being deposited on the third via hole on the organic layer 9.
  • the structure of the array substrate at the third opening 14 includes The substrate 1, the gate scan line 2, the gate insulating layer 4, the first passivation layer 8, and the second passivation layer 10.
  • the size of the second opening 13 is 7 ⁇ m ⁇ 7 ⁇ m, and the second opening 13 is located at an intermediate position between the two adjacent first openings 11 on the source/drain data line 5;
  • the size of the port 14 is 7 ⁇ m ⁇ 7 ⁇ m, and the third opening 14 is located at an intermediate position between the two adjacent first openings 11 on the gate scanning line 2.
  • a metal long line 16 is formed by laser chemical vapor deposition between an opening 11 and a third opening 14 such that the broken gate scan line 2 is restored.
  • the present invention provides an array substrate and a wire break repair method thereof, wherein a plurality of openings are provided above the corresponding gate scan lines and source and drain data lines on the surface of the array substrate, and the openings pass the passivation
  • the layer is deposited at the through hole of the organic layer, so that when the array substrate of the present invention is repaired, the chemical vapor deposition metal long line can be directly formed between the openings at both ends of the broken line, so that the broken gate scan line is formed.
  • the repairing method saves the process of removing the organic layer by laser, saves the time of wire-cut repairing, effectively reduces the laser loss of the machine when the organic layer is removed, and improves the repairing efficiency and repair of the wire-cutting.
  • the success rate improves the display quality of liquid crystal panel products.

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Abstract

一种阵列基板及其断线修补方法，通过在阵列基板表面对应栅极扫描线（2）与源漏极数据线（5）的上方设置数个开口（11,13,14），所述开口（11,13,14）通过钝化层（10）沉积于有机层（9）的通孔处形成，使得阵列基板在进行断线修补时，可以直接在断线处两端的开口（11,13,14）之间通过镭射化学气相沉积形成金属长线（16），使断开的栅极扫描线（2）或源漏极数据线（5）恢复连接，该修补方法省去了镭射去除有机层（9）的工序，节省了断线修补时间，有效地减少去除有机层（9）时的机台镭射损耗，提高了断线修补效率和修补成功率，进而提高液晶面板产品的显示品质。

Description

阵列基板及其断线修补方法 技术领域
本发明涉及显示技术领域，尤其涉及一种阵列基板及该阵列基板的断线修补方法。
背景技术
随着显示技术的发展，液晶显示器(Liquid Crystal Display，LCD)等平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。
现有市场上的液晶显示装置大部分为背光型液晶显示器，其包括液晶显示面板及背光模组(backlight module)。液晶显示面板的工作原理是在两片平行的玻璃基板当中放置液晶分子，两片玻璃基板中间有许多垂直和水平的细小电线，通过通电与否来控制液晶分子改变方向，将背光模组的光线折射出来产生画面。
通常液晶显示面板由彩膜基板(CF，Color Filter)、薄膜晶体管基板(TFT，Thin Film Transistor)、夹于彩膜基板与薄膜晶体管基板之间的液晶(LC，Liquid Crystal)及密封胶框(Sealant)组成，其成型工艺一般包括：前段阵列(Array)制程(薄膜、黄光、蚀刻及剥膜)、中段成盒(Cell)制程(TFT基板与CF基板贴合)及后段模组组装制程(驱动IC与印刷电路板压合)。其中，前段Array制程主要是形成TFT基板，以便于控制液晶分子的运动；中段Cell制程主要是在TFT基板与CF基板之间添加液晶；后段模组组装制程主要是驱动IC压合与印刷电路板的整合，进而驱动液晶分子转动，显示图像。
随着液晶面板技术的不断发展，越来越多的新技术应用在薄膜晶体管阵列基板上，如平面转换(In-Plane Switching，IPS)，边缘场开关技术(Fringe Field Switching，FFS)，色彩滤镜矩阵(Color Filter On Array，COA)等技术。这些技术对显示基板的平坦度要求比较高，通常需要在阵列基板上沉积一层较厚的有机层如色阻层、平坦层等。在阵列基板制作过程中，由于各种因素的影响，可能导致金属导线包括扫描线和数据线存在断线的情况。为了修补此类阵列基板的断线，目前是通过断线修补机先去除有机层和透明电极层后，再进行修补长线，断线修补耗时长，当有机层无法完全 去除时，可能会影响产品的断线修补成功率。
发明内容
本发明的目的在于提供一种阵列基板，所述阵列基板表面对应栅极扫描线与源漏极数据线的上方设置数个开口，所述开口形成于有机层的通孔处，使得本发明的阵列基板在进行断线修补时，可以直接在断线处两端的开口之间利用镭射化学气相沉积形成金属长线进行修复，省去了镭射去除有机层的工序，提高断线修补效率和修补成功率。
本发明的目的还在于提供一种阵列基板的断线修补方法，通过直接在断线处两端的开口之间镭射化学气相沉积金属长线，使得断开的栅极扫描线或源漏极数据线恢复连接，省去了镭射去除有机层的工序，提高了断线修补效率和修补成功率，同时有效地减少去除有机层时的机台镭射损耗，进而提高液晶面板产品的显示品质。
为实现上述目的，本发明提供一种阵列基板，其包括：基板，位于所述基板上的栅极扫描线，位于所述栅极扫描线和基板上的栅极绝缘层，位于所述栅极绝缘层上的源漏极数据线，位于所述源漏极数据线与栅极绝缘层上的第一钝化层，位于所述第一钝化层上的有机层，以及位于所述有机层与第一钝化层上的第二钝化层；
其中，所述栅极扫描线与源漏极数据线在基板上垂直交叉排列，所述有机层上对应于栅极扫描线与源漏极数据线的交叉口处形成有第一通孔，所述第二钝化层沉积于该第一通孔处形成第一开口。
所述第一开口的大小为15μm×15μm。
所述有机层为色阻层或者平坦层；所述第一钝化层和第二钝化层的材料为无机材料；所述有机层的厚度大于所述第一钝化层和第二钝化层的厚度。
所述阵列基板上对应源漏极数据线上两相邻的第一开口之间还设有第二开口，所述第二开口通过所述第二钝化层沉积于有机层上的第二通孔处形成。
所述阵列基板上对应栅极扫描线上两相邻的第一开口之间还设有第三开口，所述第三开口通过所述第二钝化层沉积于有机层上的第三通孔处形成。
所述第二开口和第三开口的大小均为7μm×7μm。
本发明还提供一种阵列基板，包括：基板，位于所述基板上的栅极扫描线，位于所述栅极扫描线和基板上的栅极绝缘层，位于所述栅极绝缘层 上的源漏极数据线，位于所述源漏极数据线与栅极绝缘层上的第一钝化层，位于所述第一钝化层上的有机层，以及位于所述有机层与第一钝化层上的第二钝化层；
其中，所述栅极扫描线与源漏极数据线在基板上垂直交叉排列，所述有机层上对应于栅极扫描线与源漏极数据线的交叉口处形成有第一通孔，所述第二钝化层沉积于该第一通孔处形成第一开口；
其中，所述第一开口的大小为15μm×15μm；
其中，所述有机层为色阻层或者平坦层；所述第一钝化层和第二钝化层的材料为无机材料；所述有机层的厚度大于所述第一钝化层和第二钝化层的厚度。
本发明还提供一种阵列基板的断线修补方法，其中，所述阵列基板包括：基板，位于所述基板上的栅极扫描线，位于所述栅极扫描线和基板上的栅极绝缘层，位于所述栅极绝缘层上的源漏极数据线，位于所述源漏极数据线与栅极绝缘层上的第一钝化层，位于所述第一钝化层上的有机层，以及位于所述有机层与第一钝化层上的第二钝化层；
其中，所述栅极扫描线与源漏极数据线在基板上垂直交叉排列，所述有机层上对应于栅极扫描线与源漏极数据线的每一交叉口处形成有第一通孔，所述第二钝化层沉积于该第一通孔处形成第一开口；
当所述阵列基板上的栅极扫描线或源漏极数据线发生断线时，通过在栅极扫描线或源漏极数据线上位于断线处两端的第一开口之间利用镭射化学气相沉积形成金属长线，使得断开的栅极扫描线或源漏极数据线恢复连接。
所述阵列基板上对应源漏极数据线上两相邻的第一开口之间还设有第二开口，所述第二开口通过所述第二钝化层沉积于有机层上的第二通孔处形成；
当所述阵列基板上的源漏极数据线发生断线，且所述源漏极数据线上两相邻的第一开口之间的距离较大，超过机台断线修补能力时，在断线处两端的第一开口和第二开口之间通过镭射化学气相沉积形成金属长线，使得断开的源漏极数据线恢复连接。
所述阵列基板上对应栅极扫描线上两相邻的第一开口之间还设有第三开口，所述第三开口通过所述第二钝化层沉积于有机层上的第三通孔处形成；
当栅极扫描线发生断线，且所述栅极扫描线上两相邻的第一开口之间的距离较大，超过机台断线修补能力时，在断线处两端的第一开口和第三 开口之间通过镭射化学气相沉积形成金属长线，使得断开的栅极扫描线恢复连接。
所述金属长线为直线，所述金属长线的材料为六羰基钨。
本发明的有益效果：本发明提供一种阵列基板及其断线修补方法，通过在阵列基板表面对应栅极扫描线与源漏极数据线的上方设置数个开口，所述开口通过所述钝化层沉积于有机层的通孔处形成，使得本发明的阵列基板在进行断线修补时，可以直接在断线处两端的开口之间通过镭射化学气相沉积形成金属长线，使得断开的栅极扫描线或源漏极数据线恢复连接，该修补方法省去了镭射去除有机层的工序，节省了断线修补时间，有效地减少了去除有机层时的机台镭射损耗，提高了断线修补效率和修补成功率，进而提高液晶面板产品的显示品质。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为本发明阵列基板第一实施例的结构示意图；
图2为图1所示阵列基板上第一开口处沿A-A线的剖面图；
图3为图1所示阵列基板上第一开口处沿B-B线的剖面图；
图4为采用镭射化学气相沉积金属长线的方式对图1所示的阵列基板进行栅极扫描线断线修补的示意图；
图5为采用镭射化学气相沉积金属长线的方式对图1所示的阵列基板进行源漏极数据线断线修补的示意图；
图6为本发明阵列基板第二实施例的结构示意图；
图7为采用镭射化学气相沉积金属长线的方式对图6所示的阵列基板进行源漏极数据线断线修补的示意图；
图8为本发明阵列基板第三实施例的结构示意图；
图9为采用镭射化学气相沉积金属长线的方式对图8所示的阵列基板进行栅极扫描线断线修补的示意图；
图10为本发明阵列基板第四实施例的结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1-图3，为本发明阵列基板的第一实施例，所述阵列基板包括：基板1，位于所述基板1之上的栅极扫描线2，位于所述栅极扫描线2和基板1之上的栅极绝缘层4，位于所述栅极绝缘层4之上的源漏极数据线5，位于所述源漏极数据线5与栅极绝缘层4之上的第一钝化层8，位于所述第一钝化层8之上的有机层9，以及位于所述有机层9与第一钝化层8之上的第二钝化层10。
具体的，所述有机层9为色阻层或者平坦层；所述第一钝化层8和第二钝化层10的材料为无机材料；所述有机层9的厚度大于所述第一钝化层8和第二钝化层10的厚度。
具体的，所述栅极扫描线2与源漏极数据线5在基板1上垂直交叉排列，所述有机层9上对应于栅极扫描线2与源漏极数据线5的每一交叉口处形成有第一通孔，所述第二钝化层10沉积于第一通孔处形成第一开口11，如图2和图3所示，所述第一开口11处阵列基板的结构包括基板1、栅极扫描线2、栅极绝缘层4、源漏极数据线5、第一钝化层8、以及第二钝化层10，即与开口11处正对的基板1上不设置有机层9。
优选的，所述第一开口11的大小为15μm×15μm。
如图4所示，当所述阵列基板上的栅极扫描线2因制程不良导致断线时，在栅极扫描线2上位于断线处两端的第一开口11之间，通过镭射化学气相沉积形成金属长线16，使得断开的栅极扫描线2恢复连接。
如图5所示，当所述阵列基板上的源漏极数据线5因制程不良导致断线时，在源漏极数据线5上位于断线处两端的第一开口11之间，通过镭射化学气相沉积形成金属长线16，使得断开的源漏极数据线5恢复连接。
具体的，该金属长线16为直线，该金属长线16的材料为六羰基钨。
上述阵列基板的断线修补方法，由于所述阵列基板在第一开口11处所述栅极扫描线2和源漏极数据线5的上方均未设置有机层9，从而省去了镭射去除有机层9的工序，节省了断线修补时间，提高机台的稼动率，可有效地提高断线修补效率和修补成功率，进而提高液晶面板产品的显示品质。
请参阅图6，为本发明阵列基板的第二实施例，与第一实施例相比，其不同之处在于，所述阵列基板上对应源漏极数据线5上两相邻的第一开口11之间设置第二开口13，所述第二开口13通过所述第二钝化层10沉积于有机层9上的第二通孔处形成，所述阵列基板位于第二开口13处的结构包 括基板1、栅极绝缘层4、源漏极数据线5、第一钝化层8、以及第二钝化层10。
优选的，所述第二开口13的大小为7μm×7μm，所述第二开口13位于源漏极数据线5上两相邻的第一开口11之间的中间位置。
如图7所示，当源漏极数据线5发生断线，且所述源漏极数据线5上两相邻的第一开口11之间的距离较大，超过机台断线修补能力时，通过在断线处两端的第一开口11和第二开口13之间利用镭射化学气相沉积形成金属长线16，使得断开的源漏极数据线5恢复连接，与图8所示的断线修补方法相比，该修补方法减少了镭射化学气相沉积金属长线的路径，节省了断线修补时间，提高机台的稼动率。
请参阅图8，为本发明阵列基板的第三实施例，与第一实施例相比，其不同之处在于，所述阵列基板上对应栅极扫描线2上两相邻的第一开口11之间设置第三开口14，所述第三开口14通过所述第二钝化层10沉积于有机层9上的第三通孔处形成，所述阵列基板位于第三开口14处的结构包括基板1、栅极扫描线2、栅极绝缘层4、第一钝化层8、以及第二钝化层10。
优选的，所述第三开口14的大小为7μm×7μm，所述第三开口14位于栅极扫描线2上两相邻的第一开口11之间的中间位置。
如图9所示，当栅极扫描线2发生断线，且所述栅极扫描线2上两相邻的第一开口11之间的距离较大，超过机台断线修补能力时，通过在断线位置两端的第一开口11和第三开口14之间利用镭射化学气相沉积形成金属长线16，使得断开的栅极扫描线2恢复连接，与图7所示的断线修补方法相比，该方法减少了镭射化学气相沉积金属长线的路径，节省了断线修补时间，提高机台的稼动率。
请参阅图10，为本发明阵列基板的第四实施例，与第一实施例相比，其不同之处在于，所述阵列基板上对应源漏极数据线5上两相邻的第一开口11之间设置第二开口13，所述第二开口13通过所述第二钝化层10沉积于有机层9上的第二通孔处形成，所述第二开口13处阵列基板的结构包括基板1、栅极绝缘层4、源漏极数据线5、第一钝化层8、以及第二钝化层10；所述阵列基板上对应栅极扫描线2上两相邻的第一开口11之间设置第三开口14，所述第三开口14通过所述第二钝化层10沉积于有机层9上的第三通孔处形成，所述第三开口14处阵列基板的结构包括基板1、栅极扫描线2、栅极绝缘层4、第一钝化层8、以及第二钝化层10。
优选的，所述第二开口13的大小为7μm×7μm，所述第二开口13位于源漏极数据线5上两相邻的第一开口11之间的中间位置；所述第三开 口14的大小为7μm×7μm，所述第三开口14位于栅极扫描线2上两相邻的第一开口11之间的中间位置。
当源漏极数据线5发生断线，且所述源漏极数据线5上两相邻的第一开口11之间的距离较大，超过机台断线修补能力时，在断线处两端的第一开口11和第二开口13之间通过镭射化学气相沉积形成金属长线16，使得断开的源漏极数据线5恢复连接；
当栅极扫描线2发生断线，且所述栅极扫描线2上两相邻的第一开口11之间的距离较大，超过机台断线修补能力时，在断线位置两端的第一开口11和第三开口14之间通过镭射化学气相沉积形成金属长线16，使得断开的栅极扫描线2恢复连接。
综上所述，本发明提供一种阵列基板及其断线修补方法，通过在阵列基板表面对应栅极扫描线与源漏极数据线的上方设置数个开口，所述开口通过所述钝化层沉积于有机层的通孔处形成，使得本发明的阵列基板在进行断线修补时，可以直接在断线处两端的开口之间镭射化学气相沉积金属长线，使得断开的栅极扫描线或源漏极数据线恢复连接，该修补方法省去了镭射去除有机层的工序，节省了断线修补时间，有效地减少去除有机层时的机台镭射损耗，提高了断线修补效率和修补成功率，进而提高液晶面板产品的显示品质。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (18)

  1. 一种阵列基板，包括：基板，位于所述基板上的栅极扫描线，位于所述栅极扫描线和基板上的栅极绝缘层，位于所述栅极绝缘层上的源漏极数据线，位于所述源漏极数据线与栅极绝缘层上的第一钝化层，位于所述第一钝化层上的有机层，以及位于所述有机层与第一钝化层上的第二钝化层；
    其中，所述栅极扫描线与源漏极数据线在基板上垂直交叉排列，所述有机层上对应于栅极扫描线与源漏极数据线的交叉口处形成有第一通孔，所述第二钝化层沉积于该第一通孔处形成第一开口。
  2. 如权利要求1所述的阵列基板，其中，所述第一开口的大小为15μm×15μm。
  3. 如权利要求1所述的阵列基板，其中，所述有机层为色阻层或者平坦层；所述第一钝化层和第二钝化层的材料为无机材料；所述有机层的厚度大于所述第一钝化层和第二钝化层的厚度。
  4. 如权利要求1所述的阵列基板，其中，所述阵列基板上对应源漏极数据线上两相邻的第一开口之间还设有第二开口，所述第二开口通过所述第二钝化层沉积于有机层上的第二通孔处形成。
  5. 如权利要求4所述的阵列基板，其中，所述第二开口的大小为7μm×7μm。
  6. 如权利要求1所述的阵列基板，其中，所述阵列基板上对应栅极扫描线上两相邻的第一开口之间还设有第三开口，所述第三开口通过所述第二钝化层沉积于有机层上的第三通孔处形成。
  7. 如权利要求6所述的阵列基板，其中，所述第三开口的大小为7μm×7μm。
  8. 一种阵列基板，包括：基板，位于所述基板上的栅极扫描线，位于所述栅极扫描线和基板上的栅极绝缘层，位于所述栅极绝缘层上的源漏极数据线，位于所述源漏极数据线与栅极绝缘层上的第一钝化层，位于所述第一钝化层上的有机层，以及位于所述有机层与第一钝化层上的第二钝化层；
    其中，所述栅极扫描线与源漏极数据线在基板上垂直交叉排列，所述有机层上对应于栅极扫描线与源漏极数据线的交叉口处形成有第一通孔，所述第二钝化层沉积于该第一通孔处形成第一开口；
    其中，所述第一开口的大小为15μm×15μm；
    其中，所述有机层为色阻层或者平坦层；所述第一钝化层和第二钝化层的材料为无机材料；所述有机层的厚度大于所述第一钝化层和第二钝化层的厚度。
  9. 如权利要求8所述的阵列基板，其中，所述阵列基板上对应源漏极数据线上两相邻的第一开口之间还设有第二开口，所述第二开口通过所述第二钝化层沉积于有机层上的第二通孔处形成。
  10. 如权利要求9所述的阵列基板，其中，所述第二开口的大小为7μm×7μm。
  11. 如权利要求8所述的阵列基板，其中，所述阵列基板上对应栅极扫描线上两相邻的第一开口之间还设有第三开口，所述第三开口通过所述第二钝化层沉积于有机层上的第三通孔处形成。
  12. 如权利要求11所述的阵列基板，其中，所述第三开口的大小为7μm×7μm。
  13. 一种阵列基板的断线修补方法，所述阵列基板包括：基板，位于所述基板上的栅极扫描线，位于所述栅极扫描线和基板上的栅极绝缘层，位于所述栅极绝缘层上的源漏极数据线，位于所述源漏极数据线与栅极绝缘层上的第一钝化层，位于所述第一钝化层上的有机层，以及位于所述有机层与第一钝化层上的第二钝化层；
    其中，所述栅极扫描线与源漏极数据线在基板上垂直交叉排列，所述有机层上对应于栅极扫描线与源漏极数据线的每一交叉口处形成有第一通孔，所述第二钝化层沉积于该第一通孔处形成第一开口；
    当所述阵列基板上的栅极扫描线或源漏极数据线发生断线时，通过在栅极扫描线或源漏极数据线上位于断线处两端的第一开口之间利用镭射化学气相沉积形成金属长线，使得断开的栅极扫描线或源漏极数据线恢复连接。
  14. 如权利要求13所述的阵列基板的修复方法，其中，所述金属长线为直线，所述金属长线的材料为六羰基钨。
  15. 如权利要求13所述的阵列基板的修复方法，其中，所述阵列基板上对应源漏极数据线上两相邻的第一开口之间还设有第二开口，所述第二开口通过所述第二钝化层沉积于有机层上的第二通孔处形成；
    当所述阵列基板上的源漏极数据线发生断线，且所述源漏极数据线上两相邻的第一开口之间的距离较大，超过机台断线修补能力时，在断线处两端的第一开口和第二开口之间通过镭射化学气相沉积形成金属长线，使 得断开的源漏极数据线恢复连接。
  16. 如权利要求15所述的阵列基板的修复方法，其中，所述金属长线为直线，所述金属长线的材料为六羰基钨。
  17. 如权利要求13所述的阵列基板的修复方法，其中，所述阵列基板上对应栅极扫描线上两相邻的第一开口之间还设有第三开口，所述第三开口通过所述第二钝化层沉积于有机层上的第三通孔处形成；
    当栅极扫描线发生断线，且所述栅极扫描线上两相邻的第一开口之间的距离较大，超过机台断线修补能力时，在断线处两端的第一开口和第三开口之间通过镭射化学气相沉积形成金属长线，使得断开的栅极扫描线恢复连接。
  18. 如权利要求17所述的阵列基板的修复方法，其中，所述金属长线为直线，所述金属长线的材料为六羰基钨。
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