WO2016141705A1 - 阵列基板及其制造方法和显示装置 - Google Patents
阵列基板及其制造方法和显示装置 Download PDFInfo
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- WO2016141705A1 WO2016141705A1 PCT/CN2015/089834 CN2015089834W WO2016141705A1 WO 2016141705 A1 WO2016141705 A1 WO 2016141705A1 CN 2015089834 W CN2015089834 W CN 2015089834W WO 2016141705 A1 WO2016141705 A1 WO 2016141705A1
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- gate
- array substrate
- extending direction
- data line
- thin film
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- 239000000758 substrate Substances 0.000 title claims abstract description 114
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000010409 thin film Substances 0.000 claims abstract description 60
- 238000002161 passivation Methods 0.000 claims description 18
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 230000002349 favourable effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 48
- 239000010408 film Substances 0.000 description 25
- 238000000034 method Methods 0.000 description 20
- 239000000463 material Substances 0.000 description 16
- 229910052750 molybdenum Inorganic materials 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 12
- 239000004973 liquid crystal related substance Substances 0.000 description 11
- 238000000059 patterning Methods 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 229910001257 Nb alloy Inorganic materials 0.000 description 7
- 239000002131 composite material Substances 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 229910052738 indium Inorganic materials 0.000 description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 6
- 229910044991 metal oxide Inorganic materials 0.000 description 6
- 150000004706 metal oxides Chemical class 0.000 description 6
- 238000002294 plasma sputter deposition Methods 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- QNTVPKHKFIYODU-UHFFFAOYSA-N aluminum niobium Chemical compound [Al].[Nb] QNTVPKHKFIYODU-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 4
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- DTSBBUTWIOVIBV-UHFFFAOYSA-N molybdenum niobium Chemical compound [Nb].[Mo] DTSBBUTWIOVIBV-UHFFFAOYSA-N 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- NCMAYWHYXSWFGB-UHFFFAOYSA-N [Si].[N+][O-] Chemical compound [Si].[N+][O-] NCMAYWHYXSWFGB-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000009740 moulding (composite fabrication) Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
Images
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- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
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Definitions
- the source of the thin film transistor is the connection portion or a part of the connection portion.
- the invention also provides a method for manufacturing an array substrate, comprising the following steps:
- the angle between the extending direction of the gate line of the array substrate and the extending direction of the data line segment 30 is ⁇ , 60° ⁇ ⁇ ⁇ 87°
- the extending direction of the side of the protruding structure close to the pixel electrode The angle with the extending direction of the gate line is ⁇ , 20° ⁇ ⁇ ⁇ 70°, so that the array substrate can obtain an optimized viewing angle direction, a high aperture ratio, and a good display quality.
- the embodiment provides an array substrate including a plurality of gate lines (eg, Gi-1, Gi, Gi+1) and a plurality of data lines (eg, Dj-) disposed at intersections.
- Dj, Dj+1 and pixel cells defined by adjacent gate lines and adjacent data lines, each data line comprising a plurality of data line segments 30, each data line segment 30 corresponding to one pixel unit, and the same
- the two adjacent data line segments 30 of the data line are connected by a connecting portion 30a; the angle between the extending direction of the gate line and the extending direction of the data line segment 30 is ⁇ ; wherein 60° ⁇ ⁇ ⁇ 87°;
- the gate of the thin film transistor is a bump structure 10 of a gate line, and an angle between an extending direction of a side of the bump structure adjacent to the pixel electrode and an extending direction of the gate line is ⁇ , wherein 20° ⁇ ⁇ ⁇ 70 °.
- Step 4 on the substrate 1 that completes the above steps, depositing an active layer film of a thin film transistor by a chemical vapor deposition, plasma assisted chemical vapor deposition or sputtering, and forming an active layer of the thin film transistor by a patterning process Graphics.
- the material of the active layer 20 may be amorphous silicon, polycrystalline silicon, microcrystalline silicon or an oxide semiconductor.
- Step 7 On the substrate 1 which has completed the above steps, a transparent conductive metal oxide film is deposited by sputtering. Then, a pattern of the common electrode 60 is formed by a patterning process such that the common electrode 60 is disposed above the pixel electrode 50 and insulated from the pixel electrode 50, and the common electrode 60 has a slit, the slit The extending direction is parallel to the extending direction of the data line.
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- Crystallography & Structural Chemistry (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Geometry (AREA)
- Ceramic Engineering (AREA)
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Abstract
Description
Claims (15)
- 一种阵列基板,其包括交叉设置的多条栅线和多条数据线,以及由相邻栅线和相邻数据线限定的像素单元,所述像素单元包括薄膜晶体管和像素电极,其中,每条数据线包括多个数据线线段,每一数据线线段对应一个像素单元,且同一数据线的两相邻的数据线线段通过连接部连接;所述栅线的延伸方向与所述数据线线段的延伸方向的夹角为α,其中,60°≤α≤87°;所述薄膜晶体管的栅极为栅线的凸起结构,所述凸起结构的靠近所述像素电极的一侧边的延伸方向与所述栅线的延伸方向的夹角为β,其中,20°≤β≤70°。
- 根据权利要求1所述的阵列基板,其中,70°≤α≤85°,30°≤β≤50°。
- 根据权利要求1所述的阵列基板,其中,所述像素电极为板状电极,其包括第一边、第二边、第三边、第四边和第五边;其中,所述第一边和所述第二边平行于所述栅线的延伸方向;所述第三边和所述第四边平行于所述数据线线段的延伸方向;所述第五边平行于所述凸起结构的靠近所述像素电极的一侧边的延伸方向。
- 根据权利要求1所述的阵列基板,其中,所述阵列基板还包括公共电极,所述公共电极设置于所述像素电极上方,且与所述像素电极绝缘;所述公共电极具有狭缝,所述狭缝的延伸方向平行于所述数据线线段的延伸方向。
- 根据权利要求1所述的阵列基板,其中,所述薄膜晶体管的源极为所述连接部,或者为所述连接部的一部分。
- 根据权利要求1所述的阵列基板,其中,同一条数据线的 对应不同像素单元的数据线线段的延伸方向相互平行。
- 根据权利要求1所述的阵列基板,其中,所述连接部的形状为曲线线段。
- 根据权利要求1所述的阵列基板,其中,所述栅线的凸起结构的另一侧边位于以该凸起结构作为栅极的薄膜晶体管所在的像素单元的外侧。
- 根据权利要求1所述的阵列基板,其中,所述栅线的凸起结构的顶边与以该凸起结构作为栅极的薄膜晶体管所在的所述像素单元对应的数据线线段交叠。
- 根据权利要求1所述的阵列基板,其中,所述薄膜晶体管的漏极与所述像素电极通过钝化层过孔连接或直接搭接。
- 一种显示装置,包括阵列基板和与该阵列基板对盒设置的对盒基板,其中,所述阵列基板为根据权利要求1-10任意一项所述的阵列基板。
- 一种阵列基板的制造方法,包括以下步骤:S1:在衬底上形成薄膜晶体管的栅极、栅线和公共电极线,使得所述栅极为所述栅线的凸起结构;S2:在完成步骤S1的衬底上形成栅极绝缘层;S3:在完成步骤S2的衬底上形成所述薄膜晶体管的有源层;S4:在完成步骤S3的衬底上形成所述薄膜晶体管的源极、漏极和数据线,使得所述栅线的延伸方向与所述数据线的延伸方向的夹角为α,其中,60°≤α≤87°;S5:在完成步骤S4的衬底上形成钝化层,并形成贯穿所述薄膜晶体管的漏极上方的钝化层的过孔;以及S6:在完成步骤S5的衬底上形成像素电极,使得所述像素电极通过所述过孔与所述漏极连接,并且所述凸起结构的靠近所述像素电极的一侧边的延伸方向与所述栅线的延伸方向的夹角为β,其中,20°≤β≤70°。
- 根据权利要求12所述的制造方法,其中,70°≤α≤85°,30°≤β≤50°。
- 一种阵列基板的制造方法,包括以下步骤:A1:在衬底上形成薄膜晶体管的栅极、栅线和公共电极线,使得所述栅极为所述栅线的凸起结构;A2:在完成步骤A1的衬底上形成栅极绝缘层;A3:在完成步骤A2的衬底上形成像素电极,使得所述凸起结构的靠近所述像素电极的一侧边的延伸方向与所述栅线的延伸方向的夹角为β,其中,20°≤β≤70°;A4:在完成步骤A3的衬底上形成所述薄膜晶体管的有源层;A5:在完成步骤A4的衬底上形成所述薄膜晶体管的源极、漏极和数据线,使得所述漏极与所述像素电极直接搭接,所述栅线的延伸方向与所述数据线的延伸方向的夹角为α,其中,60°≤α≤87°;A6:在完成步骤A5的衬底上形成钝化层;以及A7:在完成步骤A6的衬底上形成公共电极,使得所述公共电极设置于所述像素电极上方,且与所述像素电极绝缘,所述公共电极具有狭缝,所述狭缝的延伸方向平行于所述数据线的延伸方向。
- 根据权利要求14所述的制造方法,其中,70°≤α≤85°,30°≤β≤50°。
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