WO2016106856A1 - 薄膜晶体管阵列基板及液晶显示面板 - Google Patents

薄膜晶体管阵列基板及液晶显示面板 Download PDF

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Publication number
WO2016106856A1
WO2016106856A1 PCT/CN2015/070751 CN2015070751W WO2016106856A1 WO 2016106856 A1 WO2016106856 A1 WO 2016106856A1 CN 2015070751 W CN2015070751 W CN 2015070751W WO 2016106856 A1 WO2016106856 A1 WO 2016106856A1
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Prior art keywords
common electrode
pixel electrode
thin film
pixel
film transistor
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PCT/CN2015/070751
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English (en)
French (fr)
Inventor
衣志光
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深圳市华星光电技术有限公司
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Priority to US14/425,044 priority Critical patent/US20160349585A1/en
Publication of WO2016106856A1 publication Critical patent/WO2016106856A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
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    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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    • G02F1/136259—Repairing; Defects
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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Definitions

  • the invention belongs to the technical field of liquid crystal display, and in particular to a thin film transistor array substrate and a liquid crystal display panel.
  • a liquid crystal display has the characteristics of small size, low power consumption, no radiation, and has occupied a dominant position in the current flat panel display market.
  • a liquid crystal display includes a liquid crystal display panel and a backlight module disposed opposite to each other. Since the liquid crystal display panel cannot emit light by itself, it must display an image by using a surface light source provided by the backlight module.
  • the liquid crystal display panel includes an upper substrate and a lower substrate disposed opposite to each other, and a liquid crystal layer interposed between the upper and lower substrates.
  • the upper substrate is generally referred to as a color filter (CF) substrate
  • the lower substrate is generally referred to as an Array substrate.
  • CF color filter
  • Array substrate In the array substrate, a Thin Film Transistor (TFT) is generally used as the driving, thereby realizing high-speed, high-brightness, high-contrast display screen information.
  • TFT Thin Film Transistor
  • the area occupied by the long wires is large, the area of the transparent pixel electrode layer to be removed is also large, and at the opposite side of the area after the removal of the transparent pixel electrode layer, only the common electrode on the color filter substrate drives the liquid crystal layer.
  • the liquid crystal molecules in the rotation are rotated, which will keep the liquid crystal molecules at the opposite position always deflected, and the opposite side appears in a long bright state, so that the liquid crystal display panel has a slight bright point at the opposite position.
  • an object of the present invention is to provide a thin film transistor array substrate including a gate line, a data line, and a pixel area defined by the intersection of the gate line and the data line.
  • the pixel region includes a common electrode and a pixel electrode disposed on the common electrode, the pixel electrode is electrically insulated from the common electrode, the data line includes a disconnection region, and the thin film transistor array substrate further includes at least two a wiring layer, the two wiring layers are respectively disposed at two sides of the disconnection region, the two wiring layers are electrically contacted with the data line, and a portion of the pixel electrode adjacent to the disconnection region is removed The portion of the common electrode adjacent to the break region is electrically insulated from the remaining portion, both of which are in electrical contact with a portion of the common electrode adjacent the break region.
  • the pixel region further includes a second insulating layer disposed between the pixel electrode and the common electrode.
  • At least two contact holes are disposed on the second insulating layer at the removed portion of the pixel electrode, wherein the two wiring layers are disposed on the second insulating layer, the two wiring layers Corresponding contact holes are respectively filled to electrically contact the portion of the common electrode adjacent to the disconnection region.
  • the wiring layer is electrically insulated from the pixel electrode.
  • the material of the common electrode and the pixel electrode is indium tin oxide, and the material of the wiring layer is metal.
  • Another object of the present invention is to provide a liquid crystal display panel including a thin film transistor array substrate and a color filter substrate disposed opposite to each other, the thin film transistor array substrate including gate lines, data lines, and the gate lines a pixel region defined by crossing the data line, the pixel region including a common electrode and a pixel electrode disposed on the common electrode, the pixel electrode being electrically insulated from the common electrode, the data line including a disconnection
  • the thin film transistor array substrate further includes at least two wiring layers, the two wiring layers are respectively disposed on two sides of the disconnection region, and the two wiring layers are electrically contacted with the data line. Removing a portion of the pixel electrode adjacent to the disconnection region, the portion of the common electrode adjacent to the disconnection region being electrically insulated from the remaining portion, the two wiring layers being adjacent to the common electrode and the disconnection region Part of the electrical contact.
  • the pixel region further includes a second insulating layer disposed between the pixel electrode and the common electrode.
  • At least two contact holes are disposed on the second insulating layer at the removed portion of the pixel electrode, wherein the two wiring layers are disposed on the second insulating layer, the two wiring layers Corresponding contact holes are respectively filled to electrically contact the portion of the common electrode adjacent to the disconnection region.
  • the wiring layer is electrically insulated from the pixel electrode.
  • the material of the common electrode and the pixel electrode is indium tin oxide, and the material of the wiring layer is metal.
  • the invention removes the portion of the pixel electrode adjacent to the disconnection region, and electrically contacts the portion of the common electrode adjacent to the disconnection region and the data line through two wiring layers disposed on both sides of the disconnection region to complete the repair of the disconnection region.
  • the area of the pixel electrode removed by this repair method is very small, and the removal of the large-area pixel electrode caused by the use of the long wire in the prior art is avoided.
  • the area of the removed pixel electrode is very small, even if a minute micro-bright spot is formed at the removal portion, it is visually unaffected, thereby improving the display quality of the liquid crystal display panel.
  • FIG. 1 is a front elevational view of a thin film transistor array substrate in accordance with an embodiment of the present invention
  • FIG. 2 is a schematic structural view of a liquid crystal display according to an embodiment of the present invention.
  • FIG. 1 is a front elevational view of a thin film transistor array substrate in accordance with an embodiment of the present invention.
  • the entire thin film transistor array substrate generally includes a plurality of data lines, a plurality of gate lines, and a plurality of pixel regions formed by intersecting a plurality of data lines and a plurality of gate lines. For the sake of clarity, only one of them is shown in FIG. Like The prime region is taken as an example.
  • a Thin Film Transistor (TFT) Array substrate 100 includes a pixel region defined by a gate line 120a crossing a data line 150a.
  • the pixel region includes a first transparent conductive layer 180 and a second transparent conductive layer 190 disposed on a substrate (eg, a transparent glass substrate) 110, and a film located near the intersection of the gate line 120a and the data line 150a.
  • the first transparent conductive layer 180 serves as a common electrode
  • the second transparent conductive layer 190 functions as a pixel electrode.
  • the thin film transistor includes a gate electrode 120b sequentially formed on the substrate 110, a first insulating layer (not shown) covering the gate electrode 120b, and an amorphous silicon layer (ie, an active layer) formed of amorphous silicon (a-Si). 140, a source 150b and a drain 150c on the amorphous silicon layer 140, a second insulating layer (or passivation layer) 130, a via 160 formed over the drain 150c and formed on the second insulating layer, and a first The second transparent conductive layer 190, wherein the second transparent conductive layer 190 is in contact with the drain 150c through the via 160.
  • the gate line 120a and the gate 120b are patterned by a first metal layer, and the data line 150a, the source 150b, and the drain 150c are patterned by the second metal layer.
  • the first transparent conductive layer 180 and the second transparent conductive layer 190 are both formed of a transparent conductive material such as indium tin oxide (ITO).
  • the black area on the data line 150a in FIG. 1 is the broken line area 151.
  • the Thin Film Transistor (TFT) Array substrate 100 further includes at least two wiring layers 170.
  • the portion of the second transparent conductive layer 190 adjacent to the broken region 151 is removed to expose the second insulating layer 130 under the portion where the second transparent conductive layer 190 is removed, and the first transparent conductive layer under the second insulating layer 130
  • the portion of the layer 180 adjacent to the broken region 151 is severed, that is, the portion of the first transparent conductive layer 180 adjacent to the broken region 151 is not in electrical contact with the remaining portion of the first transparent conductive layer 180, that is, electrically insulated.
  • Two contact holes 131 are formed in the exposed second insulating layer 130.
  • Two wiring layers 170 are respectively disposed on the second insulating layer 130 to fill the corresponding contact holes 131 so as to be in electrical contact with a portion of the first transparent conductive layer 180 adjacent to the broken region 151, and the two wiring layers 170 are respectively disposed at break. Both sides of the line region 151 are in electrical contact with the data line 150a, thereby completing the repair of the disconnection region 151.
  • the portion of the second transparent conductive layer 190 adjacent to the disconnection region 151 is removed.
  • the wiring layers 170 disposed on both sides of the disconnection region 151 are respectively in electrical contact with the portion of the first transparent conductive layer 180 adjacent to the disconnection region 151 and the data line 150a to complete the repair of the disconnection region 151, and the repair method
  • the area of the removed second transparent conductive layer 190 is very small, avoiding the removal of large-area pixel electrodes caused by the use of long wires in the prior art.
  • the area of the removed second transparent conductive layer 190 is very small, even if minute micro-bright spots are formed at the removal portion, it is visually unaffected, thereby improving the display quality of the liquid crystal display panel.
  • FIG. 2 is a schematic structural view of a liquid crystal display according to an embodiment of the present invention.
  • a liquid crystal display includes a liquid crystal display panel and a backlight module 400 disposed opposite the liquid crystal display panel, wherein the backlight module 400 provides a display light source to the liquid crystal display panel to make the liquid crystal
  • the display panel displays the image by the light provided by the backlight module 400.
  • the liquid crystal display panel has the following configuration: the thin film transistor array substrate 100; the second substrate 200, which is a color filter (CF) substrate, usually including a black matrix and an alignment layer, and the like; the liquid crystal layer 300 is sandwiched between the thin film transistors.
  • the array substrate 100 and the second substrate 200 are; and the thin film transistor array substrate 100 and the second substrate 200 are arranged to face each other.
  • CF color filter
  • the second substrate 200 used in the present invention is the same as the prior art, the specific structure thereof can be referred to the related prior art, and details are not described herein again.
  • the backlight module 400 of the present embodiment is also the same as the backlight module in the conventional liquid crystal display. Therefore, the specific structure can also refer to the related prior art, and details are not described herein again.

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Abstract

一种薄膜晶体管阵列基板（100），包括两个接线层（170）、栅极线（120a）、数据线（150a）及由栅极线（120a）与数据线（150a）交叉而限定的像素区域，像素区域包括公共电极（180）及设置在公共电极（180）上的像素电极（190），像素电极（190）与公共电极（180）电绝缘，数据线（150a）包括断线区（151），两个接线层（170）分别设置在断线区（151）的两侧，两个接线层（170）均与数据线（150a）电接触，像素电极（190）的邻近断线区（151）的部分去除，公共电极（180）邻近断线区（151）的部分与其余部分电绝缘，两个接线层（170）均与公共电极（180）邻近断线区（151）的部分电接触。断线区修复方法去除的像素电极的面积非常小，能够提升液晶显示面板的显示品质。

Description

薄膜晶体管阵列基板及液晶显示面板 技术领域
本发明属于液晶显示技术领域，具体地讲，涉及一种薄膜晶体管阵列基板及液晶显示面板。
背景技术
随着信息社会的发展，人们对平板显示器的需求得到了快速的增长。液晶显示器(Liquid Crystal Display，简称LCD)具有体积小、功耗低、无辐射等特点，在当前的平板显示器市场占据了主导地位。通常液晶显示器包括相对设置的液晶显示面板及背光模块，其中，由于液晶显示面板无法自身发光，所以其必须借用背光模块提供的面光源而显示影像。
液晶显示面板包括互相对向设置的上基板和下基板，以及夹设于上下基板之间的液晶层。而上基板通常称为彩色滤光片(Color Filter，CF)基板，下基板通常称为阵列(Array)基板。在阵列基板中，一般使用薄膜晶体管(Thin Film Transistor，简称TFT)作为驱动，从而实现高速度、高亮度、高对比度的显示屏幕信息。
然而，在现有技术的阵列基板的制程过程中，会出现大量信号线断线的现象，因此需要对断线的信号线进行修复。目前的修复方法需要采用长导线跨越阵列基板上的公共电极，从而实现信号线断点处的修复。但是，这种方式会使的长导线覆盖到透明像素电极层(即ITO薄膜层)上，为了避免长导线与透明像素电极层电导通，需要将长导线所在区域的透明像素电极层去除。但是，由于长导线所占区域较大，需要去除的透明像素电极层的区域也大，而在去除透明像素电极层后的区域的相对处，只有彩色滤光片基板上的公共电极驱动液晶层中的液晶分子旋转，这将会使该相对处的液晶分子一直保持偏转，该相对处出现长亮状态，从而使液晶显示面板在该相对处的位置出现微亮点。
发明内容
为了解决上述现有技术存在的问题，本发明的目的在于提供一种薄膜晶体管阵列基板，包括栅极线、数据线以及由所述栅极线与所述数据线交叉而限定的像素区域，所述像素区域包括公共电极及设置在所述公共电极上的像素电极，所述像素电极与所述公共电极电绝缘，所述数据线包括断线区，所述薄膜晶体管阵列基板还包括至少两个接线层，所述两个接线层分别设置在所述断线区的两侧，所述两个接线层均与所述数据线电接触，所述像素电极的邻近所述断线区的部分去除，所述公共电极邻近所述断线区的部分与其余部分电绝缘，所述两个接线层均与所述公共电极邻近所述断线区的部分电接触。
进一步地，所述像素区域还包括第二绝缘层，所述第二绝缘层设置在所述像素电极与所述公共电极之间。
进一步地，位于所述像素电极的去除部分处的第二绝缘层上设置有至少两个接触孔，其中，所述两个接线层设置在所述第二绝缘层上，所述两个接线层分别填充对应的接触孔，以与所述公共电极邻近所述断线区的部分电接触。
进一步地，所述接线层与所述像素电极电绝缘。
进一步地，所述公共电极与所述像素电极的材料均为氧化铟锡，所述接线层的材料为金属。
本发明的另一目的还在于提供一种液晶显示面板，包括相对设置的薄膜晶体管阵列基板与彩色滤光片基板，所述薄膜晶体管阵列基板包括栅极线、数据线以及由所述栅极线与所述数据线交叉而限定的像素区域，所述像素区域包括公共电极及设置在所述公共电极上的像素电极，所述像素电极与所述公共电极电绝缘，所述数据线包括断线区，所述薄膜晶体管阵列基板还包括至少两个接线层，所述两个接线层分别设置在所述断线区的两侧，所述两个接线层均与所述数据线电接触，所述像素电极的邻近所述断线区的部分去除，所述公共电极邻近所述断线区的部分与其余部分电绝缘，所述两个接线层均与所述公共电极邻近所述断线区的部分电接触。
进一步地，所述像素区域还包括第二绝缘层，所述第二绝缘层设置在所述像素电极与所述公共电极之间。
进一步地，位于所述像素电极的去除部分处的第二绝缘层上设置有至少两个接触孔，其中，所述两个接线层设置在所述第二绝缘层上，所述两个接线层分别填充对应的接触孔，以与所述公共电极邻近所述断线区的部分电接触。
进一步地，所述接线层与所述像素电极电绝缘。
进一步地，所述公共电极与所述像素电极的材料均为氧化铟锡，所述接线层的材料为金属。
本发明将像素电极邻近断线区的部分去除，通过设置在断线区两侧的两个接线层分别与公共电极邻近断线区的部分和数据线电接触，以完成对断线区的修复，并且这种修复方法去除的像素电极的面积非常小，避免了现有技术的采用长导线而导致的去除大面积的像素电极。而且，由于去除的像素电极的面积非常小，即使在去除处形成微小的微亮点，在视觉上也不会受到影响，从而提升液晶显示面板的显示品质。
附图说明
通过结合附图进行的以下描述，本发明的实施例的上述和其它方面、特点和优点将变得更加清楚，附图中：
图1是根据本发明的实施例的薄膜晶体管阵列基板的正视示意图；
图2是根据本发明的实施例的液晶显示器的结构示意图。
具体实施方式
以下，将参照附图来详细描述本发明的实施例。然而，可以以许多不同的形式来实施本发明，并且本发明不应该被解释为限制于这里阐述的具体实施例。相反，提供这些实施例是为了解释本发明的原理及其实际应用，从而使本领域的其他技术人员能够理解本发明的各种实施例和适合于特定预期应用的各种修改。
图1是根据本发明的实施例的薄膜晶体管阵列基板的正视示意图。整个薄膜晶体管阵列基板通常包括多条数据线、多条栅极线以及多条数据线与多条栅极线相互交叉形成的多个像素区域，为清楚起见，图1中只示出了其中一个像 素区域作为示例。
参照图1，根据本发明的实施例的薄膜晶体管(Thin Film Transistor，简称TFT)阵列(Array)基板100包括由栅极线120a与数据线150a交叉而限定的像素区域。其中，该像素区域内包括设置在基板(例如，透明的玻璃基板)110上的第一透明导电层180和第二透明导电层190，以及位于栅极线120a与数据线150a交叉处附近的薄膜晶体管。其中，第一透明导电层180作为公共电极，第二透明导电层190作为像素电极。
该薄膜晶体管包括在基板110上依次形成的栅极120b、覆盖栅极120b的第一绝缘层(未示出)、由非晶硅(a-Si)形成的非晶硅层(即有源层)140、非晶硅层140上的源极150b和漏极150c、第二绝缘层(或称钝化层)130、位于漏极150c上方并在第二绝缘层上形成的过孔160以及第二透明导电层190，其中，第二透明导电层190通过过孔160与漏极150c接触。
在本实施例中，栅极线120a及栅极120b由第一金属层图案化形成，数据线150a、源极150b和漏极150c由第二金属层图案化形成。第一透明导电层180与第二透明导电层190均由氧化铟锡(ITO)等透明导电材料形成。
诚如背景技术中所描述，在现有的薄膜晶体管阵列基板的制程过程中，会出现大量信号线断线的现象。继续参照图1，图1中在数据线150a上的黑色区域为断线区151。
为了对数据线150a上的断线区151进行修复，在本实施例中，薄膜晶体管(Thin Film Transistor，简称TFT)阵列(Array)基板100还包括至少两个接线层170。将第二透明导电层190邻近断线区151的部分去除，以使第二透明导电层190被去除的部分下的第二绝缘层130暴露，并且将第二绝缘层130下方的第一透明导电层180邻近断线区151的部分切断，也就是说，第一透明导电层180邻近断线区151的部分与第一透明导电层180的其余部分不发生电接触，即电绝缘。在暴露的第二绝缘层130上开设两个接触孔131。两个接线层170分别设置在第二绝缘层130上以填充对应的接触孔131，从而与第一透明导电层180邻近断线区151的部分电接触，并且两个接线层170分别设置在断线区151的两侧，以与数据线150a电接触，进而完成对断线区151的修复。
由上述可知，将第二透明导电层190邻近断线区151的部分去除，通过分 别设置在断线区151两侧的接线层170分别与第一透明导电层180邻近断线区151的部分和数据线150a电接触，以完成对断线区151的修复，并且这种修复方法去除的第二透明导电层190的面积非常小，避免了现有技术的采用长导线而导致的去除大面积的像素电极。而且，由于去除的第二透明导电层190的面积非常小，即使在去除处形成微小的微亮点，在视觉上也不会受到影响，从而提升液晶显示面板的显示品质。
图2是根据本发明的实施例的液晶显示器的结构示意图。
参照图2，根据本发明的实施例的液晶显示器包括液晶显示面板以及与该液晶显示面板相对设置的背光模组400，其中，背光模组400提供显示光源给该液晶显示面板，以使该液晶显示面板借由背光模组400提供的光来显示影像。而液晶显示面板具有如下配置：上述的薄膜晶体管阵列基板100；第二基板200，其为彩色滤光片(CF)基板，通常包括黑色矩阵以及配向层等；液晶层300，夹设在薄膜晶体管阵列基板100和第二基板200之间；并且薄膜晶体管阵列基板100和第二基板200被布置成彼此面对。
鉴于本发明中采用的第二基板200与现有技术相同，因此其具体结构可参照相关的现有技术，在此不再赘述。而本实施例的背光模组400也与现有液晶显示器中的背光模组相同，因此其具体结构也可参照相关的现有技术，在此也不再赘述。
虽然已经参照特定实施例示出并描述了本发明，但是本领域的技术人员将理解：在不脱离由权利要求及其等同物限定的本发明的精神和范围的情况下，可在此进行形式和细节上的各种变化。

Claims (16)

  1. 一种薄膜晶体管阵列基板，包括栅极线、数据线以及由所述栅极线与所述数据线交叉而限定的像素区域，所述像素区域包括公共电极及设置在所述公共电极上的像素电极，所述像素电极与所述公共电极电绝缘，所述数据线包括断线区，其中，所述薄膜晶体管阵列基板还包括至少两个接线层，所述两个接线层分别设置在所述断线区的两侧，所述两个接线层均与所述数据线电接触，所述像素电极的邻近所述断线区的部分去除，所述公共电极邻近所述断线区的部分与其余部分电绝缘，所述两个接线层均与所述公共电极邻近所述断线区的部分电接触。
  2. 根据权利要求1所述的薄膜晶体管阵列基板，其中，所述像素区域还包括第二绝缘层，所述第二绝缘层设置在所述像素电极与所述公共电极之间。
  3. 根据权利要求2所述的薄膜晶体管阵列基板，其中，位于所述像素电极的去除部分处的第二绝缘层上设置有至少两个接触孔，其中，所述两个接线层设置在所述第二绝缘层上，所述两个接线层分别填充对应的接触孔，以与所述公共电极邻近所述断线区的部分电接触。
  4. 根据权利要求3所述的薄膜晶体管阵列基板，其中，所述接线层与所述像素电极电绝缘。
  5. 根据权利要求1所述的薄膜晶体管阵列基板，其中，所述公共电极与所述像素电极的材料均为氧化铟锡，所述接线层的材料为金属。
  6. 根据权利要求2所述的薄膜晶体管阵列基板，其中，所述公共电极与所述像素电极的材料均为氧化铟锡，所述接线层的材料为金属。
  7. 根据权利要求3所述的薄膜晶体管阵列基板，其中，所述公共电极与所述像素电极的材料均为氧化铟锡，所述接线层的材料为金属。
  8. 根据权利要求4所述的薄膜晶体管阵列基板，其中，所述公共电极与所述像素电极的材料均为氧化铟锡，所述接线层的材料为金属。
  9. 一种液晶显示面板，包括相对设置的薄膜晶体管阵列基板与彩色滤光片基板，所述薄膜晶体管阵列基板包括栅极线、数据线以及由所述栅极线与所述数据线交叉而限定的像素区域，所述像素区域包括公共电极及设置在所述公共电极上的像素电极，所述像素电极与所述公共电极电绝缘，所述数据线包括断线区，其中，所述薄膜晶体管阵列基板还包括至少两个接线层，所述两个接线层分别设置在所述断线区的两侧，所述两个接线层均与所述数据线电接触，所述像素电极的邻近所述断线区的部分去除，所述公共电极邻近所述断线区的部分与其余部分电绝缘，所述两个接线层均与所述公共电极邻近所述断线区的部分电接触。
  10. 根据权利要求9所述的液晶显示面板，其中，所述像素区域还包括第二绝缘层，所述第二绝缘层设置在所述像素电极与所述公共电极之间。
  11. 根据权利要求10所述的液晶显示面板，其中，位于所述像素电极的去除部分处的第二绝缘层上设置有至少两个接触孔，其中，所述两个接线层设置在所述第二绝缘层上，所述两个接线层分别填充对应的接触孔，以与所述公共电极邻近所述断线区的部分电接触。
  12. 根据权利要求11所述的液晶显示面板，其中，所述接线层与所述像素电极电绝缘。
  13. 根据权利要求12所述的液晶显示面板，其中，所述公共电极与所述像素电极的材料均为氧化铟锡，所述接线层的材料为金属。
  14. 根据权利要求13所述的液晶显示面板，其中，所述公共电极与所述像素电极的材料均为氧化铟锡，所述接线层的材料为金属。
  15. 根据权利要求14所述的液晶显示面板，其中，所述公共电极与所述像素电极的材料均为氧化铟锡，所述接线层的材料为金属。
  16. 根据权利要求15所述的液晶显示面板，其中，所述公共电极与所述像素电极的材料均为氧化铟锡，所述接线层的材料为金属。
PCT/CN2015/070751 2014-12-31 2015-01-15 薄膜晶体管阵列基板及液晶显示面板 WO2016106856A1 (zh)

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9618810B2 (en) * 2015-02-11 2017-04-11 Shenzhen China Star Optoelectronics Technology Co., Ltd. Array substrate and liquid crystal display panel
CN105425433B (zh) * 2015-11-10 2018-10-30 深圳市华星光电技术有限公司 具有亮点缺陷的像素的修复方法、阵列基板及液晶面板
CN108646476B (zh) * 2018-03-22 2020-12-25 南京中电熊猫液晶显示科技有限公司 一种液晶面板的断线修复方法
CN110456583A (zh) * 2019-06-11 2019-11-15 惠科股份有限公司 一种显示面板及其修补方法、显示装置
CN112748615B (zh) * 2021-01-04 2022-11-29 成都中电熊猫显示科技有限公司 阵列基板及阵列基板的修复方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6515301B2 (en) * 2000-09-13 2003-02-04 Chi Mei Optoelectronics Corporation Structure and fabrication method of flat panel display comprising address line with mending layer
CN101216644A (zh) * 2007-12-28 2008-07-09 昆山龙腾光电有限公司 液晶显示装置阵列基板及其缺陷修补方法
CN103278987A (zh) * 2013-05-24 2013-09-04 京东方科技集团股份有限公司 阵列基板、该阵列基板断线修复方法及显示装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100587366B1 (ko) * 2000-08-30 2006-06-08 엘지.필립스 엘시디 주식회사 횡전계방식 액정표시장치 및 그 제조방법
TW594161B (en) * 2003-02-18 2004-06-21 Au Optronics Corp Flat panel display with repairable defects for data lines and the repairing method
TWI354172B (en) * 2007-03-21 2011-12-11 Au Optronics Corp Pixel array substrate
CN101776808B (zh) * 2010-02-10 2012-02-29 深超光电（深圳）有限公司 一种液晶显示器阵列基板及其修补方法
KR101925983B1 (ko) * 2011-12-14 2018-12-07 엘지디스플레이 주식회사 액정표시소자 및 그 제조방법
KR101987320B1 (ko) * 2012-12-31 2019-06-11 삼성디스플레이 주식회사 표시 장치
CN104035252A (zh) * 2014-05-23 2014-09-10 深圳市华星光电技术有限公司 一种阵列基板的布线结构

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6515301B2 (en) * 2000-09-13 2003-02-04 Chi Mei Optoelectronics Corporation Structure and fabrication method of flat panel display comprising address line with mending layer
CN101216644A (zh) * 2007-12-28 2008-07-09 昆山龙腾光电有限公司 液晶显示装置阵列基板及其缺陷修补方法
CN103278987A (zh) * 2013-05-24 2013-09-04 京东方科技集团股份有限公司 阵列基板、该阵列基板断线修复方法及显示装置

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