CN106647081B - 阵列基板、液晶显示面板和液晶显示装置 - Google Patents

阵列基板、液晶显示面板和液晶显示装置 Download PDF

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CN106647081B
CN106647081B CN201710095154.7A CN201710095154A CN106647081B CN 106647081 B CN106647081 B CN 106647081B CN 201710095154 A CN201710095154 A CN 201710095154A CN 106647081 B CN106647081 B CN 106647081B
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CN106647081A (zh
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孙艳阳
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Wuhan China Star Optoelectronics Technology Co Ltd
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    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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    • H01L27/124Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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    • G02F2201/122Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode having a particular pattern
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    • G02F2202/00Materials and properties
    • G02F2202/10Materials and properties semiconductor
    • G02F2202/104Materials and properties semiconductor poly-Si

Abstract

本发明公开了一种阵列基板、液晶显示面板和液晶显示装置。该阵列基板包括多条数据线、多条扫描线和多个像素单元。其中,每条数据线被划分为多段连续的子数据线,每个像素单元包括一个像素开关,且每段子数据线对应一个像素开关和一条扫描线;每段子数据线被划分为首尾相连的第一部分和第二部分,第二部分位于其所属的子数据线对应的像素开关的区域内,且第二部分的形状为曲线。本发明能够移除连接相邻的两子数据线的第一部分之间的多晶硅,消除相邻数据线之间的短路问题,从而实现对阵列基板的修复,减少阵列基板的报废,降低产能的损失。

Description

阵列基板、液晶显示面板和液晶显示装置
技术领域
本发明涉及显示技术领域,尤其涉及一种阵列基板、液晶显示面板和液晶显示装置。
背景技术
在形成阵列基板的整个过程中,为了保证每一道工序的工艺结果都在管控范围之内,避免不合格产品在生产线上大面积出现,一般在完成一道工序后都要进行相应的工程检查。工程检查即检查各道工序及完整的产品是否发生不良现象,从而根据检查结果判断是否进行阵列修补(Array Repair)。
在阵列修补的过程中,经常会遇到如图1所示的多晶硅(Ploy Si)残留(即图1中的110)问题。在图1所示的这种情况下,由于被栅极(Gate)线覆盖的多晶硅无法使用激光器(Laser)移除,从而造成了相邻数据线间的短路(Data-Data Short),使得整个阵列基板报废,造成产能的浪费。
综上,亟需一种新的阵列基板设计方案以解决上述问题。
发明内容
针对上述技术问题,本发明提出了一种阵列基板、液晶显示面板和液晶显示装置,通过移除连接相邻的两子数据线的第一部分之间的多晶硅来实现对阵列基板的修复,从而有利于减少阵列基板的报废,降低产能的损失。
根据本发明的一个方面,提供了一种阵列基板,包括多条数据线、多条扫描线和多个像素单元,每条数据线被划分为多段连续的子数据线,每个像素单元包括一个像素开关,且每段子数据线对应一个像素开关和一条扫描线;其中,
每段子数据线被划分为首尾相连的第一部分和第二部分;所述第二部分位于其所属的子数据线对应的像素开关的区域内,且所述第二部分的形状为曲线。
根据本发明的实施例,所述第二部分的形状为轴对称图形。
根据本发明的实施例,所述第二部分的形状的对称轴为所述第二部分所属的子数据线对应的扫描线。
根据本发明的实施例,所述第二部分的形状为中心对称图形。
根据本发明的实施例,所述第二部分的形状的对称中心为所述第二部分所属的子数据线与所述第二部分所属的子数据线对应的扫描线的交叉点。
根据本发明的实施例,所述第二部分的形状为弧形、梯形或三角形。
根据本发明的实施例,所述第二部分的形状为S形。
根据本发明的实施例,所述第一部分的形状为直线。
根据本发明的第二个方面,还提供了一种液晶显示面板,包括:
以上所述的阵列基板;
彩膜基板;以及
设置在所述阵列基板和所述彩膜基板之间的液晶层。
根据本发明的第三个方面,还提供了一种液晶显示装置,包括以上所述的液晶显示面板。
与现有技术相比,上述方案中的一个或多个实施例可以具有如下优点或有益效果:
在由扫描线(即栅极线)下方覆盖的多晶硅导致的相邻数据线短路的情况下,本发明通过将像素开关区域内的数据线设置为曲线形状,来移除连接相邻的两子数据线的第一部分之间的多晶硅,从而消除了相邻数据线之间的短路问题,进而实现对阵列基板的修复,减少阵列基板的报废,降低产能的损失。
本发明的其它特征和优点将在随后的说明书中阐述,并且部分地从说明书中变得显而易见,或者通过实施本发明而了解。本发明的目的和其他优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。
附图说明
附图用来提供对本发明的进一步理解,并且构成说明书的一部分,与本发明的实施例共同用于解释本发明,并不构成对本发明的限制。在附图中:
图1是现有技术中的阵列极板由残留的多晶硅引起的相邻数据线短路的局部结构示意图;
图2是本发明的实施中第一种阵列基板的局部结构示意图;
图3是本发明的实施中第一种阵列基板由残留的多晶硅引起的相邻数据线短路的局部结构示意图;
图4是本发明的实施中第一种阵列基板修复后的局部结构示意图;
图5是本发明的实施中第二种阵列基板的局部结构示意图;
图6是本发明的实施中第三种阵列基板的局部结构示意图;
图7是本发明的实施中第四种阵列基板的局部结构示意图;
图8是本发明的实施中第五种阵列基板的局部结构示意图。
具体实施方式
以下将结合附图及实施例来详细说明本发明的实施方式,借此对本发明如何应用技术手段来解决技术问题,并达成技术效果的实现过程能充分理解并据以实施。需要说明的是,只要不构成冲突,本发明中的各个实施例以及各实施例中的各个特征可以相互结合,所形成的技术方案均在本发明的保护范围之内。
实施例一
为解决现有技术中由扫描线下方覆盖的多晶硅导致的相邻数据线短路且无法修复的难题,本实施例提供了一种阵列基板。图2是本发明的实施中第一种阵列基板的局部结构示意图。下面结合图2详细地说明该阵列基板200的具体结构。
该阵列基板200,包括多条数据线210、多条扫描线220、多个U型多晶硅230、多个过孔240和多个像素单元(图中未显示)。其中,纵横交错的数据线210和扫描线220将整个显示区域划分成多个像素单元。每个像素单元对应一个U型多晶硅230和一个过孔240。具体地,过孔240覆盖在U型多晶硅230左侧的上端,用于使U型多晶硅230和像素单元的像素电极相连通。
在本实施例中,每条数据线210优选地被划分为多段连续的子数据线211。具体地,每条数据线210优选地被等间距的划分为多段(每段称为一段子数据线211),且每段子数据线211与每段子数据线211之间首尾相连。同时,每个像素单元包括一个像素开关,且每段子数据线211对应一个像素开关、一条扫描线220和一个U型多晶硅230。
在本实施例中,每段子数据线211优选地被划分为首尾相连的第一部分211.1和第二部分211.2。具体而言,第一部分211.1的底端与第二部分211.2的顶端相连。
进一步地,第二部分211.2位于其所属的子数据线211对应的像素开关的区域内,且第二部分211.2的形状为曲线,以使第二部分211.2与其所属的子数据线211对应的U型多晶硅230的右侧边缘在同一平面(例如子数据线211所在平面、U型多晶硅230所在平面、或者与上述平面平行的平面)上的投影不完全重合。在此需要说明以下三点:
首先,本实施例中的像素开关指的是像素单元中的薄膜晶体管。因此本实施例中的像素开关区域即指薄膜晶体管所在的区域。具体地,薄膜晶体管所在的区域是指仅包含一个薄膜晶体管的区域。因此本实施例中像素开关区域指的是仅包含一个薄膜晶体管的区域。
其次,本实施例中第二部分211.2的形状为曲线是指,只要第二部分211.2的长度大于相邻的两子数据线211的第一部分211.1之间的最短距离(此时第二部分211.2的形状一定为弯曲的图形)即可。换句话说,本实施例中第二部分211.2的形状为非直线形状。
最后,第二部分211.2与过孔240绝缘设置。具体而言,第二部分211.2与过孔240无交集,即第二部分211.2与过孔240无连接。并且,第二部分211.2与其余的U型多晶硅230(除去第二部分211.2所属的子数据线211对应的多晶硅230)在同一平面(例如子数据线211所在平面、U型多晶硅230所在平面、或者与上述平面平行的平面)上的投影无交集。具体地,整个第二部分211.2完全没有覆盖在其余的U型多晶硅230的上方。
本实施例为了简化制作工艺,优选地将第一部分211.1的形状设置为直线。需要指出的是,在其它的实施例中,第一部分211.1的形状也可以为曲线。例如,当阵列基板为柔性阵列基板时,可以优选地将第一部分的形状211.1设置为曲线。这是由于当柔性阵列基板在拉伸力的作用下发生弯折时,采用上述设计能够有效地避免数据线210发生断裂。因此,在具体实施过程中,本领域技术人员可以根据实际需求来设定第一部分211.1的形状。
进一步地,为了清楚地说明本实施例中阵列基板的设计原理以及其达到的有益效果,下面结合图3和图4详细地说明在由扫描线220下方覆盖的多晶硅导致的相邻数据线210短路的情况下,如何实现对阵列基板的修复。
在具体展开说明之前,首先对图3中残留的多晶硅110进行说明。残留的多晶硅110为一个整体,因此扫描线220中的一段扫描线221的下方覆盖着部分多晶硅(以图3视角未能示出)。由于现有技术无法去除该段扫描线221下方覆盖的多晶硅(现有技术可以直接利用激光器将残留的多晶硅110的其余部分去除),从而导致相邻的数据线210短路,如图3所示。
针对于此,本实施例将第二部分211.2的形状设置为曲线,然后利用激光器将连接相邻的两子数据线211的第一部分211.1之间的多晶硅移除(具体请见图4中的区域A,此时与U型多晶硅430所连通的像素电极对应的像素做暗点),同时直接利用激光器将未被扫描线220覆盖的多晶硅(即残留的多晶硅110中未被扫描线220覆盖的部分)断开或者完全移除,从而消除相邻数据线210之间的短路问题,实现对阵列基板的修复。应指出的是,本实施例将第二部分211.2设置为曲线对数据线210的导电性无影响,对其他像素(即除去与U型多晶硅430所连通的像素电极对应的像素)的正常显示无影响,同时对制程也无影响。
综上,在由扫描线220下方覆盖的多晶硅导致的相邻数据线210短路情况下,应用本实施例所述的阵列基板能够移除连接相邻的两子数据线211的第一部分211.1之间的多晶硅,消除相邻数据线210之间的短路问题,从而实现对阵列基板的修复,减少阵列基板的报废,降低产能的损失。
实施例二
本实施例对实施例一中的第二部分211.2的形状进行了进一步优化。
实施例一中第二部分211.2的形状为曲线。在此基础上,本实施例对第二部分211.2的形状进行了进一步地限定。优选地,第二部分211.2的形状为轴对称图形,并且对称轴为第二部分211.2所属的子数据线211对应的扫描线220。进一步地,第二部分211.2的形状的对称轴为第二部分211.2所属的子数据线211对应的扫描线220的中心轴。
在本实施例中,第二部分211.2的形状可以选优地为弧形、梯形或三角形。如图5所示,第二部分211.2的形状为弧形。如图6所示,第二部分211.2的形状为梯形。如图7所示,第二部分211.2的形状为三角形。当然,在其它的实施例中,还可以将第二部分211.2的形状设置为其他的轴对称图形。本实施例中的三种优选图形仅用于教导本领域技术人员如何具体实施本发明,但并不意味着仅能将第二部分211.2的形状设置为上述三种图形。在具体实施过程中,本领域技术人员可以结合实际需要来确定。
另外,需要说明的是,本实施例的具体实施方式与实施例一的具体实施方式类似,具体请参见实施例一部分的描述。为了减少冗余,在此不做赘述。
综上,在由扫描线220下方覆盖的多晶硅导致的相邻数据线210短路情况下,应用本实施例所述的阵列基板能够移除连接相邻的两子数据线211的第一部分211.1之间的多晶硅,消除相邻数据线210之间的短路问题,从而实现对阵列基板的修复,减少阵列基板的报废,降低产能的损失。
实施例三
本实施例对实施例一中的第二部分211.2的形状进行了进一步优化。
实施例一中第二部分211.2的形状为曲线。在此基础上,本实施例对第二部分211.2的形状进行了进一步地限定。优选地,第二部分211.2的形状为中心对称图形,并且对称中心为第二部分211.2所属的子数据线211与第二部分211.2所属的子数据线211对应的扫描线220的交叉点。进一步地,第二部分211.2的形状的对称中心为第二部分211.2所属的子数据线211的中心轴与第二部分211.2所属的子数据线211对应的扫描线220的中心轴的交叉点。
在本实施例中,第二部分211.2的形状优选地为S形,如图8所示。当然,在其它的实施例中,还可以将第二部分211.2的形状设置为其他的中心对称图形。本实施例中的S形仅用于教导本领域技术人员如何具体实施本发明,但并不意味着仅能将第二部分的形状设置为S形。在具体实施过程中,本领域技术人员可以结合实际需要来确定。
另外,需要说明的是,本实施例的具体实施方式与实施例一的具体实施方式类似,具体请参见实施例一部分的描述。为了减少冗余,在此不做赘述。
综上,在由扫描线220下方覆盖的多晶硅导致的相邻数据线210短路情况下,应用本实施例所述的阵列基板能够移除连接相邻的两子数据线211的第一部分211.1之间的多晶硅,消除相邻数据线210之间的短路问题,从而实现对阵列基板的修复,减少阵列基板的报废,降低产能的损失。
实施例四
本发明还提供了一种液晶显示面板。本实施例的液晶显示面板包括实施例一至实施例三中任一实施例所述的阵列基板,还包括彩膜基板以及设置在所述阵列基板和彩膜基板之间的液晶层。
综上,在由扫描线220下方覆盖的多晶硅导致的相邻数据线210短路情况下,应用本实施例所述的液晶显示面板能够移除连接相邻的两子数据线211的第一部分211.1之间的多晶硅,消除相邻数据线210之间的短路问题,从而实现对阵列基板的修复,减少阵列基板的报废,降低产能的损失。
实施例五
本发明还提供了一种液晶显示装置。本实施例的液晶显示装置包括实施例四所述的液晶显示面板。该液晶显示装置优选地为手机、平板电脑、电视机以及导航仪等具有显示功能的产品。
综上,在由扫描线220下方覆盖的多晶硅导致的相邻数据线210短路情况下,应用本实施例所述的液晶显示装置能够移除连接相邻的两子数据线211的第一部分211.1之间的多晶硅,消除相邻数据线210之间的短路问题,从而实现对阵列基板的修复,减少阵列基板的报废,降低产能的损失。
虽然本发明所公开的实施方式如上,但所述的内容只是为了便于理解本发明而采用的实施方式,并非用以限定本发明。任何本发明所属技术领域内的技术人员,在不脱离本发明所公开的精神和范围的前提下,可以在实施的形式上及细节上作任何的修改与变化,但本发明的保护范围,仍须以所附的权利要求书所界定的范围为准。

Claims (6)

1.一种阵列基板,其特征在于,包括多条数据线、多条扫描线和多个像素单元,每条数据线被划分为多段连续的子数据线,每个像素单元包括一个像素开关,且每段子数据线对应一个像素开关和一条扫描线;其中,
每段子数据线被划分为首尾相连的第一部分和第二部分;所述第二部分位于其所属的子数据线对应的像素开关的区域内,且所述第二部分的形状为曲线;
所述第二部分的形状为轴对称图形,所述第二部分的形状的对称轴为所述第二部分所属的子数据线对应的扫描线;
或者,所述第二部分的形状为中心对称图形,所述第二部分的形状的对称中心为所述第二部分所属的子数据线与所述第二部分所属的子数据线对应的扫描线的交叉点。
2.根据权利要求1所述的阵列基板,其特征在于,所述第二部分的形状为弧形、梯形或三角形。
3.根据权利要求1所述的阵列基板,其特征在于,所述第二部分的形状为S形。
4.根据权利要求1至3中任一项所述的阵列基板,其特征在于,所述第一部分的形状为直线。
5.一种液晶显示面板,其特征在于,包括:
如权利要求1至4中任一项所述的阵列基板;
彩膜基板;以及
设置在所述阵列基板和所述彩膜基板之间的液晶层。
6.一种液晶显示装置,其特征在于,包括权利要求5所述的液晶显示面板。
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1881055A (zh) * 2005-06-17 2006-12-20 三星电子株式会社 液晶显示器和坏像素修复方法
CN1967334A (zh) * 2005-11-14 2007-05-23 三星电子株式会社 液晶显示器及其制造方法
CN101868756A (zh) * 2008-02-21 2010-10-20 夏普株式会社 有源矩阵基板和液晶显示装置
CN104035248A (zh) * 2014-06-30 2014-09-10 上海中航光电子有限公司 一种阵列基板及液晶显示装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4242963B2 (ja) * 1999-02-10 2009-03-25 三洋電機株式会社 カラー液晶表示装置
KR100862240B1 (ko) * 2002-07-31 2008-10-09 엘지디스플레이 주식회사 반사형 액정표시장치와 그 제조방법
CN203232230U (zh) * 2013-03-29 2013-10-09 合肥京东方光电科技有限公司 一种阵列基板及显示装置
CN204009303U (zh) * 2014-08-18 2014-12-10 京东方科技集团股份有限公司 阵列基板和显示装置
CN104267550A (zh) * 2014-10-14 2015-01-07 京东方科技集团股份有限公司 一种阵列基板、显示面板、显示装置
KR102240291B1 (ko) * 2014-11-26 2021-04-14 삼성디스플레이 주식회사 액정 표시 장치
KR102314111B1 (ko) * 2015-01-14 2021-10-18 삼성디스플레이 주식회사 액정 표시 장치
JP2017058541A (ja) * 2015-09-17 2017-03-23 株式会社ジャパンディスプレイ 液晶表示装置
JP2017097281A (ja) * 2015-11-27 2017-06-01 株式会社ジャパンディスプレイ 液晶表示装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1881055A (zh) * 2005-06-17 2006-12-20 三星电子株式会社 液晶显示器和坏像素修复方法
CN1967334A (zh) * 2005-11-14 2007-05-23 三星电子株式会社 液晶显示器及其制造方法
CN101868756A (zh) * 2008-02-21 2010-10-20 夏普株式会社 有源矩阵基板和液晶显示装置
CN104035248A (zh) * 2014-06-30 2014-09-10 上海中航光电子有限公司 一种阵列基板及液晶显示装置

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