CN109597522B - 触控阵列基板及触控显示面板 - Google Patents

触控阵列基板及触控显示面板 Download PDF

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CN109597522B
CN109597522B CN201811261029.XA CN201811261029A CN109597522B CN 109597522 B CN109597522 B CN 109597522B CN 201811261029 A CN201811261029 A CN 201811261029A CN 109597522 B CN109597522 B CN 109597522B
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touch
transparent electrode
insulating layer
array substrate
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CN109597522A (zh
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唐维
卢改平
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Wuhan China Star Optoelectronics Technology Co Ltd
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Abstract

本发明提供一种触控阵列基板及触控显示面板。该触控阵列基板包括：衬底基板、设于衬底基板上的TFT层、设于TFT层上的平坦层、设于平坦层上的金属走线层、设于金属走线层上的绝缘层、设于绝缘层上的底部透明电极、设于底部透明电极上的钝化层以及设于钝化层上的顶部透明电极；所述金属走线层包括触控信号线、虚拟走线以及连接触控信号线与虚拟走线的连接走线；所述连接走线的关键尺寸小于触控信号线和虚拟走线的关键尺寸，或者，所述连接走线靠近第一过孔的部分向远离第一过孔的方向弯曲，以扩大连接走线与第一过孔之间的距离，防止连接走线掉入第一过孔中与TFT层接触，避免顶部透明电极与底部透明电极直接短接从而导致显示面板触控不良。

Description

触控阵列基板及触控显示面板
技术领域
本发明涉及显示技术领域，尤其涉及一种触控阵列基板及触控显示面板。
背景技术
薄膜晶体管（Thin Film Transistor，TFT）是目前液晶显示装置（Liquid CrystalDisplay，LCD）和有源矩阵驱动式有机电致发光显示装置（Active Matrix Organic Light-Emitting Diode，AMOLED）中的主要驱动元件，直接关系平板显示装置的显示性能。
现有市场上的液晶显示器大部分为背光型液晶显示器，其包括液晶显示面板及背光模组（backlight module）。液晶显示面板的工作原理是在薄膜晶体管阵列基板（ThinFilm Transistor Array Substrate，TFT Array Substrate）与彩色滤光片（ColorFilter，CF）基板之间灌入液晶分子，并在两片基板上分别施加像素电压和公共电压，通过像素电压和公共电压之间形成的电场控制液晶分子的旋转方向，以将背光模组的光线透射出来产生画面。
触控显示面板根据结构不同可划分为：触控电路覆盖于液晶盒上式(On Cell)，触控电路内嵌在液晶盒内式(In Cell)、以及外挂式。内嵌式触控显示面板具有成本较低、厚度较薄等优点，受到各大面板厂家青睐，已演化为未来触控技术的主要发展方向。参见图1，其为一种现有内嵌式触控阵列基板的剖面展开示意图。目前内嵌式触控(In-Cell Touch)多采用底部透明电极(BITO)作为触控信号电极，顶部透明电极(TITO)作为像素电极，使用独立金属(Metal)线作为触控(Touch)信号线，触控信号线多采用独立的金属走线层(M3)制作而成。
为保证显示（AA）区M3关键尺寸（CD）均一性，M3需要在AA区均匀分布，则M3包括触控信号线和虚拟（Dummy）走线，该虚拟走线处于置空（Floating）状态且纵向贯穿整个AA区，为避免虚拟走线累积静电，需将虚拟走线与BITO接触，但部分虚拟走线刚好处在BITO纵向空余位置上（即虚拟走线上方没有BITO）， 虚拟走线无法通过绝缘层的过孔与BITO接触，现有技术中通过短接虚拟走线和与其相邻的触控信号线（触控信号线可通过绝缘层的过孔与BITO接触），以避免虚拟走线 Floating，但是用于短接的连接走线由于位置受限，其与绝缘层下方的平坦层（PLN）的过孔距离很近，当M3关键尺寸偏大或叠对精准测量标记（overlaymark）略微偏移时，连接走线易掉入PLN的过孔内，则会出现M3和第二金属层（M2）短接，由于M3连接BITO，M2连接TITO，即BITO和TITO直接短接，导致显示面板触控不良。
发明内容
本发明的目的在于提供一种触控阵列基板，能够避免顶部透明电极与底部透明电极直接短接从而导致显示面板触控不良。
本发明的目的还在于提供一种触控显示面板，能够避免顶部透明电极与底部透明电极直接短接从而导致显示面板触控不良。
为实现上述目的，本发明提供了一种触控阵列基板，包括：衬底基板、设于所述衬底基板上的TFT层、设于所述TFT层上的平坦层、设于所述平坦层上的金属走线层、设于所述金属走线层上的绝缘层、设于所述绝缘层上的底部透明电极、设于所述底部透明电极上的钝化层以及设于所述钝化层上的顶部透明电极；
所述顶部透明电极通过贯穿平坦层的第一过孔、贯穿绝缘层的第二过孔以及贯穿钝化层的第三过孔与TFT层接触；
所述金属走线层包括触控信号线、虚拟走线以及连接触控信号线与虚拟走线的连接走线；
所述底部透明电极通过贯穿绝缘层的第四过孔与触控信号线接触；
所述连接走线的关键尺寸小于触控信号线和虚拟走线的关键尺寸以扩大连接走线与第一过孔之间的距离，或者，所述连接走线靠近第一过孔的部分向远离第一过孔的方向弯曲以扩大连接走线与第一过孔之间的距离。
所述底部透明电极包括间隔分布的多个片电极，所述虚拟走线位于相邻两个片电极之间的间隙处。
所述TFT层包括设于所述衬底基板上的有源层、设于所述有源层上的栅极绝缘层、设于所述栅极绝缘层上的栅极、设于所述栅极上的层间绝缘层以及设于所述层间绝缘层上的源极和漏极。
所述有源层包括位于栅极下方的沟道区、位于所述沟道区两侧的离子轻掺杂区以及分别位于所述离子轻掺杂区两侧的源极接触区和漏极接触区；所述源极通过贯穿层间绝缘层和栅极绝缘层的第五过孔与源极接触区接触；所述漏极通过贯穿层间绝缘层和栅极绝缘层的第六过孔与漏极接触区接触。
所述顶部透明电极与TFT层中的漏极接触。
所述衬底基板中还设有位于有源层下方的遮光层。
所述连接走线位于栅极的上方。
所述连接走线包括连接触控信号线的第一部分、连接虚拟走线的第二部分以及连接第一部分与第二部分并向远离第一过孔的方向弯曲的第三部分。
所述连接走线的第一部分和第二部分均位于栅极的上方，所述连接走线的第三部分位于遮光层的上方。
本发明还提供一种触控显示面板，包括上述的触控阵列基板。
本发明的有益效果：本发明的触控阵列基板包括：衬底基板、设于所述衬底基板上的TFT层、设于所述TFT层上的平坦层、设于所述平坦层上的金属走线层、设于所述金属走线层上的绝缘层、设于所述绝缘层上的底部透明电极、设于所述底部透明电极上的钝化层以及设于所述钝化层上的顶部透明电极；所述顶部透明电极通过贯穿平坦层的第一过孔、贯穿绝缘层的第二过孔以及贯穿钝化层的第三过孔与TFT层接触；所述金属走线层包括触控信号线、虚拟走线以及连接触控信号线与虚拟走线的连接走线；所述底部透明电极通过贯穿绝缘层的第四过孔与触控信号线接触；所述连接走线的关键尺寸小于触控信号线和虚拟走线的关键尺寸以扩大连接走线与第一过孔之间的距离，或者，所述连接走线靠近第一过孔的部分向远离第一过孔的方向弯曲以扩大连接走线与第一过孔之间的距离，防止连接走线掉入第一过孔中与TFT层接触，避免顶部透明电极与底部透明电极直接短接从而导致显示面板触控不良。本发明的触控显示面板，能够避免顶部透明电极与底部透明电极直接短接从而导致显示面板触控不良。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为本发明的触控阵列基板的截面示意图；
图2为本发明的触控阵列基板的俯视示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1及图2，本发明提供一种触控阵列基板，包括：衬底基板10、设于所述衬底基板10上的TFT层20、设于所述TFT层20上的平坦层30、设于所述平坦层30上的金属走线层40、设于所述金属走线层40上的绝缘层50、设于所述绝缘层50上的底部透明电极60、设于所述底部透明电极60上的钝化层70以及设于所述钝化层70上的顶部透明电极80；
所述顶部透明电极80通过贯穿平坦层30的第一过孔31、贯穿绝缘层50的第二过孔51以及贯穿钝化层70的第三过孔71与TFT层20接触；
所述金属走线层40包括触控信号线41、虚拟走线42以及连接触控信号线41与虚拟走线42的连接走线43；
所述底部透明电极60通过贯穿绝缘层50的第四过孔52与触控信号线41接触；
所述连接走线43的关键尺寸小于触控信号线41和虚拟走线42的关键尺寸以扩大连接走线43与第一过孔31之间的距离，或者，所述连接走线43靠近第一过孔31的部分向远离第一过孔31的方向弯曲以扩大连接走线43与第一过孔31之间的距离。
需要说明的是，为保证金属走线层40的关键尺寸均一性（关键尺寸指的是走线的线宽），因此在金属走线层40中设置了虚拟走线42，底部透明电极60与触控信号线41接触从而接收触控信号，为了避免虚拟走线42置空而累积静电，本发明在在金属走线层40中设置连接走线43来连接触控信号线41与虚拟走线42，使虚拟走线42与底部透明电极60连接，但是连接走线43的位置受限而与第一过孔31的距离很近，由于连接走线43仅用于连接触控信号线41与虚拟走线42，对金属走线层40的关键尺寸均一性的影响不大，因此可以减小连接走线43的关键尺寸，或者，将连接走线43靠近第一过孔31的部分向远离第一过孔31的方向弯曲，来扩大连接走线43与第一过孔31之间的距离，防止连接走线43掉入第一过孔31中与TFT层20接触，避免顶部透明电极80与底部透明电极60直接短接从而导致显示面板触控不良。
具体的，所述底部透明电极60包括间隔分布的多个片电极61，所述虚拟走线42位于相邻两个片电极61之间的间隙处（即虚拟走线42的上方没有底部透明电极60），因此虚拟走线42无法通过开孔直接连接至底部透明电极60，而需要连接走线43连接虚拟走线42与触控信号线41，使虚拟走线42连接至底部透明电极60。
具体的，所述连接走线43包括连接触控信号线41的第一部分431、连接虚拟走线42的第二部分432以及连接第一部分431与第二部分432并向远离第一过孔31的方向弯曲的第三部分433。
具体的，所述TFT层20包括设于所述衬底基板10上的有源层21、设于所述有源层21上的栅极绝缘层22、设于所述栅极绝缘层22上的栅极23、设于所述栅极23上的层间绝缘层24以及设于所述层间绝缘层24上的源极25和漏极26。
进一步的，所述有源层21包括位于栅极23下方的沟道区211、位于所述沟道区211两侧的离子轻掺杂区212以及分别位于所述离子轻掺杂区212两侧的源极接触区213和漏极接触区214；所述源极25通过贯穿层间绝缘层24和栅极绝缘层22的第五过孔241与源极接触区213接触；所述漏极26通过贯穿层间绝缘层24和栅极绝缘层22的第六过孔242与漏极接触区214接触。
具体的，所述顶部透明电极80与TFT层20中的漏极26接触。
具体的，所述衬底基板10中还设有位于有源层21下方的遮光层11，用于阻挡漏光。
进一步的，当所述连接走线43的关键尺寸小于触控信号线41和虚拟走线42的关键尺寸以扩大连接走线43与第一过孔31之间的距离时，所述连接走线43位于栅极23的上方，后续触控阵列基板与彩膜基板对组成盒为显示面板时，可通过彩膜基板上的黑矩阵遮挡栅极23与连接走线43，防止连接走线43降低开口率。
进一步的，当所述连接走线43靠近第一过孔31的部分向远离第一过孔31的方向弯曲以扩大连接走线43与第一过孔31之间的距离时，所述连接走线43的第一部分431和第二部分432均位于栅极23的上方，所述连接走线43的第三部分433位于遮光层11的上方，使第三部分433向远离第一过孔31的方向弯曲时也能被遮光层11遮挡而不会降低开口率。
基于上述触控阵列基板，本发明还提供一种触控显示面板，包括上述的触控阵列基板。
综上所述，本发明的触控阵列基板包括：衬底基板、设于所述衬底基板上的TFT层、设于所述TFT层上的平坦层、设于所述平坦层上的金属走线层、设于所述金属走线层上的绝缘层、设于所述绝缘层上的底部透明电极、设于所述底部透明电极上的钝化层以及设于所述钝化层上的顶部透明电极；所述顶部透明电极通过贯穿平坦层的第一过孔、贯穿绝缘层的第二过孔以及贯穿钝化层的第三过孔与TFT层接触；所述金属走线层包括触控信号线、虚拟走线以及连接触控信号线与虚拟走线的连接走线；所述底部透明电极通过贯穿绝缘层的第四过孔与触控信号线接触；所述连接走线的关键尺寸小于触控信号线和虚拟走线的关键尺寸以扩大连接走线与第一过孔之间的距离，或者，所述连接走线靠近第一过孔的部分向远离第一过孔的方向弯曲以扩大连接走线与第一过孔之间的距离，防止连接走线掉入第一过孔中与TFT层接触，避免顶部透明电极与底部透明电极直接短接从而导致显示面板触控不良。本发明的触控显示面板，能够避免顶部透明电极与底部透明电极直接短接从而导致显示面板触控不良。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (9)

1.一种触控阵列基板，其特征在于，包括：衬底基板（10）、设于所述衬底基板（10）上的TFT层（20）、设于所述TFT层（20）上的平坦层（30）、设于所述平坦层（30）上的金属走线层（40）、设于所述金属走线层（40）上的绝缘层（50）、设于所述绝缘层（50）上的底部透明电极（60）、设于所述底部透明电极（60）上的钝化层（70）以及设于所述钝化层（70）上的顶部透明电极（80）；
所述顶部透明电极（80）通过贯穿平坦层（30）的第一过孔（31）、贯穿绝缘层（50）的第二过孔（51）以及贯穿钝化层（70）的第三过孔（71）与TFT层（20）接触；
所述金属走线层（40）包括触控信号线（41）、虚拟走线（42）以及连接触控信号线（41）与虚拟走线（42）的连接走线（43）；
所述底部透明电极（60）通过贯穿绝缘层（50）的第四过孔（52）与触控信号线（41）接触；
所述连接走线（43）的关键尺寸小于触控信号线（41）和虚拟走线（42）的关键尺寸以扩大连接走线（43）与第一过孔（31）之间的距离，或者，所述连接走线（43）靠近第一过孔（31）的部分向远离第一过孔（31）的方向弯曲以扩大连接走线（43）与第一过孔（31）之间的距离；
所述底部透明电极（60）包括间隔分布的多个片电极（61），所述虚拟走线（42）位于相邻两个片电极（61）之间的间隙处。
2.如权利要求1所述的触控阵列基板，其特征在于，所述TFT层（20）包括设于所述衬底基板（10）上的有源层（21）、设于所述有源层（21）上的栅极绝缘层（22）、设于所述栅极绝缘层（22）上的栅极（23）、设于所述栅极（23）上的层间绝缘层（24）以及设于所述层间绝缘层（24）上的源极（25）和漏极（26）。
3.如权利要求2所述的触控阵列基板，其特征在于，所述有源层（21）包括位于栅极（23）下方的沟道区（211）、位于所述沟道区（211）两侧的离子轻掺杂区（212）以及分别位于所述离子轻掺杂区（212）两侧的源极接触区（213）和漏极接触区（214）；所述源极（25）通过贯穿层间绝缘层（24）和栅极绝缘层（22）的第五过孔（241）与源极接触区（213）接触；所述漏极（26）通过贯穿层间绝缘层（24）和栅极绝缘层（22）的第六过孔（242）与漏极接触区（214）接触。
4.如权利要求2所述的触控阵列基板，其特征在于，所述顶部透明电极（80）与TFT层（20）中的漏极（26）接触。
5.如权利要求2所述的触控阵列基板，其特征在于，所述衬底基板（10）中还设有位于有源层（21）下方的遮光层（11）。
6.如权利要求2所述的触控阵列基板，其特征在于，所述连接走线（43）位于栅极（23）的上方。
7.如权利要求5所述的触控阵列基板，其特征在于，所述连接走线（43）包括连接触控信号线（41）的第一部分（431）、连接虚拟走线（42）的第二部分（432）以及连接第一部分（431）与第二部分（432）并向远离第一过孔（31）的方向弯曲的第三部分（433）。
8.如权利要求7所述的触控阵列基板，其特征在于，所述连接走线（43）的第一部分（431）和第二部分（432）均位于栅极（23）的上方，所述连接走线（43）的第三部分（433）位于遮光层（11）的上方。
9.一种触控显示面板，其特征在于，包括如权利要求1-8任一项所述的触控阵列基板。
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