WO2020082544A1 - 触控阵列基板及触控显示面板 - Google Patents

触控阵列基板及触控显示面板 Download PDF

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Publication number
WO2020082544A1
WO2020082544A1 PCT/CN2018/121359 CN2018121359W WO2020082544A1 WO 2020082544 A1 WO2020082544 A1 WO 2020082544A1 CN 2018121359 W CN2018121359 W CN 2018121359W WO 2020082544 A1 WO2020082544 A1 WO 2020082544A1
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WIPO (PCT)
Prior art keywords
layer
touch
insulating layer
trace
transparent electrode
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PCT/CN2018/121359
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English (en)
French (fr)
Inventor
唐维
卢改平
Original Assignee
武汉华星光电技术有限公司
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Application filed by 武汉华星光电技术有限公司 filed Critical 武汉华星光电技术有限公司
Priority to US16/327,249 priority Critical patent/US10983634B2/en
Publication of WO2020082544A1 publication Critical patent/WO2020082544A1/zh

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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0416—Control or interface arrangements specially adapted for digitisers
    • G06F3/0418—Control or interface arrangements specially adapted for digitisers for error correction or compensation, e.g. based on parallax, calibration or alignment
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0416—Control or interface arrangements specially adapted for digitisers
    • G06F3/04164—Connections between sensors and controllers, e.g. routing lines between electrodes and connection pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield

Definitions

  • the invention relates to the field of display technology, in particular to a touch array substrate and a touch display panel.
  • TFT Thin Film Transistor
  • LCD Liquid Crystal Display
  • AMOLED Active Matrix Organic Light-Emitting
  • LCD Liquid Crystal Display
  • AMOLED Active Matrix Organic Light-Emitting
  • liquid crystal displays which include a liquid crystal display panel and a backlight module.
  • the working principle of the liquid crystal display panel is based on the thin film transistor array substrate (Thin Film Transistor Array Substrate, TFT Array Substrate) and the color filter (Color Filter, CF) is filled with liquid crystal molecules between the substrates, and pixel voltage and common voltage are applied to the two substrates respectively.
  • the electric field formed between the pixel voltage and the common voltage controls the rotation direction of the liquid crystal molecules to change the backlight module ’s
  • the light is transmitted out to produce the picture.
  • the touch display panel can be divided into: a touch circuit covered on liquid crystal cell (On Cell), a touch circuit embedded in the liquid crystal cell (In Cell), and a plug-in type according to different structures.
  • the in-cell touch display panel has the advantages of lower cost and thinner thickness. It is favored by major panel manufacturers and has evolved into the main development direction of touch technology in the future.
  • FIG. 1 is a schematic cross-sectional development diagram of an existing in-cell touch array substrate.
  • In-cell touch mostly uses the bottom transparent electrode (BITO) as the touch signal electrode, the top transparent electrode (TITO) as the pixel electrode, and the independent metal (Metal) line as the touch (Touch) signal line.
  • the touch signal line mostly uses the independent Made of metal trace layer (M3).
  • M3 In order to ensure the uniformity of the critical size (CD) of M3 in the display (AA) area, M3 needs to be evenly distributed in the AA area, then M3 includes touch signal lines and Dummy traces, which are in a floating state. In addition, the vertical wiring runs through the entire AA area. In order to avoid the accumulation of static electricity on the virtual wiring, it is necessary to contact the virtual wiring with BITO, but some of the virtual wiring is just in the vertical position of BITO (that is, there is no BITO above the virtual wiring) It is not possible to contact BITO through the via of the insulating layer.
  • the virtual trace and the adjacent touch signal line are short-circuited (the touch signal line can contact the BITO through the via of the insulating layer) to avoid virtual
  • the wiring is floating, but the connection wiring used for shorting is very close to the via of the flat layer (PLN) under the insulating layer due to its limited position.
  • the critical size of M3 is too large or the precision measurement mark is overlapped (overlay mark)
  • the connection traces can easily fall into the via of the PLN, and there will be a short circuit between M3 and the second metal layer (M2). Since M3 is connected to BITO, M2 is connected to TITO, that is, BITO and TITO are shorted directly , Causing the display panel to touch Bad.
  • An object of the present invention is to provide a touch array substrate, which can prevent the top transparent electrode and the bottom transparent electrode from being short-circuited directly, resulting in poor touch control of the display panel.
  • the object of the present invention is also to provide a touch display panel, which can avoid direct short circuit between the top transparent electrode and the bottom transparent electrode, resulting in poor touch control of the display panel.
  • the present invention provides a touch array substrate, comprising: a base substrate, a TFT layer provided on the base substrate, a flat layer provided on the TFT layer, and provided on the flat A metal wiring layer on the layer, an insulating layer provided on the metal wiring layer, a bottom transparent electrode provided on the insulating layer, a passivation layer provided on the bottom transparent electrode, and the The top transparent electrode on the passivation layer;
  • the top transparent electrode is in contact with the TFT layer through the first via hole penetrating the flat layer, the second via hole penetrating the insulating layer, and the third via hole penetrating the passivation layer;
  • the metal trace layer includes touch signal lines, virtual traces, and connection traces connecting the touch signal lines and the virtual traces;
  • the bottom transparent electrode is in contact with the touch signal line through a fourth via hole penetrating the insulating layer;
  • the critical size of the connection trace is smaller than the critical size of the touch signal line and the virtual trace to increase the distance between the connection trace and the first via, or the portion of the connection trace close to the first via Bend away from the first via to increase the distance between the connecting trace and the first via.
  • the bottom transparent electrode includes a plurality of sheet electrodes distributed at intervals, and the virtual trace is located at a gap between two adjacent sheet electrodes.
  • the TFT layer includes an active layer provided on the base substrate, a gate insulating layer provided on the edged layer, a gate provided on the gate insulating layer, and a gate provided on the gate An upper interlayer insulating layer and source and drain electrodes provided on the interlayer insulating layer.
  • the active layer includes a channel region under the gate, lightly doped regions on both sides of the channel region, and source and drain contact regions on both sides of the lightly doped region
  • the source is in contact with the source contact region through a fifth via penetrating through the interlayer insulating layer and the gate insulating layer; the drain is through a sixth via penetrating the interlayer insulating layer and the gate insulating layer
  • the drain contact area contacts.
  • the top transparent electrode is in contact with the drain in the TFT layer.
  • the base substrate is further provided with a light shielding layer located below the active layer.
  • connection trace is located above the gate.
  • the connecting trace includes a first part connecting the touch signal line, a second part connecting the virtual trace, and a third part connecting the first part and the second part and bending away from the first via.
  • Both the first part and the second part of the connection trace are located above the gate, and the third part of the connection trace is located above the light shielding layer.
  • the invention also provides a touch display panel including the above-mentioned touch array substrate.
  • the touch array substrate of the present invention includes: a base substrate, a TFT layer provided on the base substrate, a flat layer provided on the TFT layer, and a flat layer provided on the flat layer A metal wiring layer, an insulating layer provided on the metal wiring layer, a bottom transparent electrode provided on the insulating layer, a passivation layer provided on the bottom transparent electrode, and the passivation layer
  • the top transparent electrode on the top; the top transparent electrode is in contact with the TFT layer through the first via that penetrates the flat layer, the second via that penetrates the insulating layer, and the third via that penetrates the passivation layer; It includes a touch signal line, a virtual trace, and a connection trace connecting the touch signal line and the virtual trace; the bottom transparent electrode contacts the touch signal line through a fourth via penetrating through the insulating layer; the connection trace Is smaller than the critical size of the touch signal line and the virtual trace to increase the distance between the connecting trace and the first via, or the portion of the connecting trace close to the
  • FIG. 1 is a schematic cross-sectional view of the touch array substrate of the present invention.
  • FIG. 2 is a schematic top view of the touch array substrate of the present invention.
  • the present invention provides a touch array substrate, including: a substrate substrate 10 ⁇ Set on the base substrate 10 Up TFT Floor 20 , Set in the TFT Floor 20 Flat layer 30 , Located on the flat layer 30 Metal trace layer 40 , Located on the metal trace layer 40 Insulating layer 50 ⁇ Located on the insulating layer 50 Transparent electrode on the bottom 60 ⁇ Set on the bottom transparent electrode 60 Passivation layer 70 And provided on the passivation layer 70 Transparent electrode on top 80 ;
  • the top transparent electrode 80 By running through the flat layer 30 First via 31 , Through insulation 50 Second via 51 And through the passivation layer 70 Third via 71 versus TFT Floor 20 contact;
  • the metal trace layer 40 Including touch signal cable 41 , Virtual routing 42 And connect the touch signal cable 41 With virtual wiring 42 Connection trace 43 ;
  • the bottom transparent electrode 60 Through the insulating layer 50 Fourth via 52 With touch Signal line 41 contact;
  • connection wiring 43 The key size is smaller than the touch signal line 41 And virtual routing 42 Key dimensions to expand the connection traces 43 With the first via 31
  • the distance between, or, the connection trace 43 Close to the first via 31 Of the part away from the first via 31 To bend the direction of the connection 43 With the first via 31 the distance between.
  • the invention in the metal trace layer 40 Set the connection trace 43 To connect the touch signal cable 41 With virtual wiring 42 To make virtual routing 42 With bottom transparent electrode 60 Connect, but connect the trace 43 The location is limited and the first via 31 Is very close due to the connection 43 Only used to connect touch signal cable 41 With virtual wiring 42 , To the metal trace layer 40 The critical dimension uniformity has little effect, so connection traces can be reduced 43 The critical dimensions, or, will connect the traces 43 Close to the first via 31 Of the part away from the first via 31 The direction of the curve is bent to expand the connection trace 43 With the first via 31 The distance between them to prevent connection 43 Fell into the first via 31 Neutral TFT Floor 20 Contact, avoid top transparent electrode 80 With bottom transparent electrode 60 Direct short-
  • the bottom transparent electrode 60 Including multiple sheet electrodes distributed at intervals 61 , The virtual routing 42 Two adjacent electrodes 61 Between the gaps (that is, virtual routing 42 Has no bottom transparent electrode above 60 ), So virtual routing 42 Cannot be directly connected to the bottom transparent electrode through the opening 60 , And need to connect the trace 43 Connect virtual traces 42 With touch Signal line 41 To make virtual routing 42 Connect to bottom transparent electrode 60 .
  • connection wiring 43 Including connecting touch signal cable 41 The first part of 431 ⁇ Connect virtual wiring 42 The second part 432 And connecting the first part 431 With the second part 432 And away from the first via 31 The third part of the direction of the bend 433 .
  • the TFT Floor 20 Including the base substrate 10 Active layer twenty one , Located in the marginal layer twenty one Gate insulating layer twenty two , Provided on the gate insulating layer twenty two On the grid twenty three , Set on the gate twenty three Interlayer insulation twenty four And the interlayer insulating layer twenty four Source 25 And drain 26 .
  • the active layer twenty one Including the gate twenty three Lower channel region 211 , Located in the channel region 211 Lightly doped regions on both sides 212 And located in the lightly doped regions of the ions, respectively 212 Source contact area on both sides 213 And drain contact 214 ;
  • the source 25 Through the interlayer insulating layer twenty four And gate insulation twenty two Fifth via 241 Contact area with source 213 Contact; the drain 26 Through the interlayer insulating layer twenty four And gate insulation twenty two Sixth via 242 Contact area 214 contact.
  • the base substrate 10 In the active layer twenty one Lower shading layer 11 Used to block light leakage.
  • connection is routed 43
  • the key size is smaller than the touch signal line 41 And virtual routing 42 Key dimensions to expand the connection traces 43 With the first via 31 Distance between the connection traces 43 Located at the gate twenty three
  • the black matrix on the color film substrate can block the gate twenty three Connect with wiring 43 To prevent connecting traces 43 Lower the aperture ratio.
  • connection is routed 43 Close to the first via 31 Of the part away from the first via 31 To bend the direction of the connection 43 With the first via 31 Distance between the connection traces 43
  • the first part of 431 And part two 432 Are located at the gate twenty three Above the connection trace 43
  • the third part 433 Located on the shading layer 11 Above the third part 433 Away from the first via 31
  • the direction of the light can also be blocked by the shading layer 11 Occlusion without reducing the aperture ratio.
  • the present invention also provides a touch display panel including the above touch array substrate.
  • the touch array substrate of the present invention includes: a base substrate, and a substrate provided on the base substrate TFT Layer, set on the TFT Flat layer on the layer, metal trace layer provided on the flat layer, insulating layer provided on the metal trace layer, bottom transparent electrode provided on the insulation layer, transparent provided on the bottom A passivation layer on the electrode and a top transparent electrode provided on the passivation layer;
  • the top transparent electrode passes through the first via that penetrates the flat layer, the second via that penetrates the insulating layer, and the first Three vias and TFT Layer contact;
  • the metal trace layer includes touch signal lines, virtual traces, and connection traces connecting the touch signal lines and the virtual traces;
  • the bottom transparent electrode is connected to the touch via a fourth via penetrating the insulating layer Signal line contact;
  • the critical size of the connection trace is smaller than the critical size of the touch signal line and the virtual trace to increase the distance between the connection trace and the first via, or the connection trace is close to the first The part of the hole is bent away from the first via

Abstract

一种触控阵列基板及触控显示面板。该触控阵列基板包括：衬底基板（10）、设于衬底基板（10）上的TFT层（20）、设于TFT层（20）上的平坦层（30）、设于平坦层（30）上的金属走线层（40）、设于金属走线层（40）上的绝缘层（50）、设于绝缘层（50）上的底部透明电极（60）、设于底部透明电极（60）上的钝化层（70）以及设于钝化层（70）上的顶部透明电极（80）；所述金属走线层（40）包括触控信号线（41）、虚拟走线（42）以及连接触控信号线（41）与虚拟走线（42）的连接走线（43）；所述连接走线（43）的关键尺寸小于触控信号线（41）和虚拟走线（42）的关键尺寸，或者，所述连接走线（43）靠近第一过孔（31）的部分向远离第一过孔（31）的方向弯曲，以扩大连接走线（43）与第一过孔（31）之间的距离，防止连接走线（43）掉入第一过孔（31）中与TFT层（20）接触，避免顶部透明电极（80）与底部透明电极（60）直接短接从而导致显示面板触控不良。

Description

触控阵列基板及触控显示面板 技术领域
本发明涉及显示技术领域，尤其涉及一种触控阵列基板及触控显示面板。
 背景技术
薄膜晶体管（Thin Film Transistor，TFT）是目前液晶显示装置（Liquid Crystal Display，LCD）和有源矩阵驱动式有机电致发光显示装置（Active Matrix Organic Light-Emitting Diode，AMOLED）中的主要驱动元件，直接关系平板显示装置的显示性能。
现有市场上的液晶显示器大部分为背光型液晶显示器，其包括液晶显示面板及背光模组（backlight module）。液晶显示面板的工作原理是在薄膜晶体管阵列基板（Thin Film Transistor Array Substrate，TFT Array Substrate）与彩色滤光片（Color Filter，CF）基板之间灌入液晶分子，并在两片基板上分别施加像素电压和公共电压，通过像素电压和公共电压之间形成的电场控制液晶分子的旋转方向，以将背光模组的光线透射出来产生画面。
触控显示面板根据结构不同可划分为：触控电路覆盖于液晶盒上式(On Cell)，触控电路内嵌在液晶盒内式(In Cell)、以及外挂式。内嵌式触控显示面板具有成本较低、厚度较薄等优点，受到各大面板厂家青睐，已演化为未来触控技术的主要发展方向。参见图1，其为一种现有内嵌式触控阵列基板的剖面展开示意图。目前内嵌式触控(In-Cell Touch)多采用底部透明电极(BITO)作为触控信号电极，顶部透明电极(TITO)作为像素电极，使用独立金属(Metal)线作为触控(Touch)信号线，触控信号线多采用独立的金属走线层(M3)制作而成。
为保证显示（AA）区M3关键尺寸（CD）均一性，M3需要在AA区均匀分布，则M3包括触控信号线和虚拟（Dummy）走线，该虚拟走线处于置空（Floating）状态且纵向贯穿整个AA区，为避免虚拟走线累积静电，需将虚拟走线与BITO接触，但部分虚拟走线刚好处在BITO纵向空余位置上（即虚拟走线上方没有BITO）， 虚拟走线无法通过绝缘层的过孔与BITO接触，现有技术中通过短接虚拟走线和与其相邻的触控信号线（触控信号线可通过绝缘层的过孔与BITO接触），以避免虚拟走线 Floating，但是用于短接的连接走线由于位置受限，其与绝缘层下方的平坦层（PLN）的过孔距离很近，当M3关键尺寸偏大或叠对精准测量标记（overlay mark）略微偏移时，连接走线易掉入PLN的过孔内，则会出现M3和第二金属层（M2）短接，由于M3连接BITO，M2连接TITO，即BITO和TITO直接短接，导致显示面板触控不良。
 技术问题
本发明的目的在于提供一种触控阵列基板，能够避免顶部透明电极与底部透明电极直接短接从而导致显示面板触控不良。
本发明的目的还在于提供一种触控显示面板，能够避免顶部透明电极与底部透明电极直接短接从而导致显示面板触控不良。
 技术解决方案
为实现上述目的，本发明提供了一种触控阵列基板，包括：衬底基板、设于所述衬底基板上的TFT层、设于所述TFT层上的平坦层、设于所述平坦层上的金属走线层、设于所述金属走线层上的绝缘层、设于所述绝缘层上的底部透明电极、设于所述底部透明电极上的钝化层以及设于所述钝化层上的顶部透明电极；
所述顶部透明电极通过贯穿平坦层的第一过孔、贯穿绝缘层的第二过孔以及贯穿钝化层的第三过孔与TFT层接触；
所述金属走线层包括触控信号线、虚拟走线以及连接触控信号线与虚拟走线的连接走线；
所述底部透明电极通过贯穿绝缘层的第四过孔与触控信号线接触；
所述连接走线的关键尺寸小于触控信号线和虚拟走线的关键尺寸以扩大连接走线与第一过孔之间的距离，或者，所述连接走线靠近第一过孔的部分向远离第一过孔的方向弯曲以扩大连接走线与第一过孔之间的距离。
所述底部透明电极包括间隔分布的多个片电极，所述虚拟走线位于相邻两个片电极之间的间隙处。
所述TFT层包括设于所述衬底基板上的有源层、设于所述有缘层上的栅极绝缘层、设于所述栅极绝缘层上的栅极、设于所述栅极上的层间绝缘层以及设于所述层间绝缘层上的源极和漏极。
所述有源层包括位于栅极下方的沟道区、位于所述沟道区两侧的离子轻掺杂区以及分别位于所述离子轻掺杂区两侧的源极接触区和漏极接触区；所述源极通过贯穿层间绝缘层和栅极绝缘层的第五过孔与源极接触区接触；所述漏极通过贯穿层间绝缘层和栅极绝缘层的第六过孔与漏极接触区接触。
所述顶部透明电极与TFT层中的漏极接触。
所述衬底基板中还设有位于有源层下方的遮光层。
所述连接走线位于栅极的上方。
所述连接走线包括连接触控信号线的第一部分、连接虚拟走线的第二部分以及连接第一部分与第二部分并向远离第一过孔的方向弯曲的第三部分。
所述连接走线的第一部分和第二部分均位于栅极的上方，所述连接走线的第三部分位于遮光层的上方。
本发明还提供一种触控显示面板，包括上述的触控阵列基板。
 有益效果
本发明的有益效果：本发明的触控阵列基板包括：衬底基板、设于所述衬底基板上的TFT层、设于所述TFT层上的平坦层、设于所述平坦层上的金属走线层、设于所述金属走线层上的绝缘层、设于所述绝缘层上的底部透明电极、设于所述底部透明电极上的钝化层以及设于所述钝化层上的顶部透明电极；所述顶部透明电极通过贯穿平坦层的第一过孔、贯穿绝缘层的第二过孔以及贯穿钝化层的第三过孔与TFT层接触；所述金属走线层包括触控信号线、虚拟走线以及连接触控信号线与虚拟走线的连接走线；所述底部透明电极通过贯穿绝缘层的第四过孔与触控信号线接触；所述连接走线的关键尺寸小于触控信号线和虚拟走线的关键尺寸以扩大连接走线与第一过孔之间的距离，或者，所述连接走线靠近第一过孔的部分向远离第一过孔的方向弯曲以扩大连接走线与第一过孔之间的距离，防止连接走线掉入第一过孔中与TFT层接触，避免顶部透明电极与底部透明电极直接短接从而导致显示面板触控不良。本发明的触控显示面板，能够避免顶部透明电极与底部透明电极直接短接从而导致显示面板触控不良。
 附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为本发明的触控阵列基板的截面示意图；
图2为本发明的触控阵列基板的俯视示意图。
 本发明的实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图 1 及图 2 ，本发明提供一种触控阵列基板，包括：衬底基板 10 、设于所述衬底基板 10 上的 TFT 层 20 、设于所述 TFT 层 20 上的平坦层 30 、设于所述平坦层 30 上的金属走线层 40 、设于所述金属走线层 40 上的绝缘层 50 、设于所述绝缘层 50 上的底部透明电极 60 、设于所述底部透明电极 60 上的钝化层 70 以及设于所述钝化层 70 上的顶部透明电极 80 ；
所述顶部透明电极 80 通过贯穿平坦层 30 的第一过孔 31 、贯穿绝缘层 50 的第二过孔 51 以及贯穿钝化层 70 的第三过孔 71 与 TFT 层 20 接触；
所述金属走线层 40 包括触控信号线 41 、虚拟走线 42 以及连接触控信号线 41 与虚拟走线 42 的连接走线 43 ；
所述底部透明电极 60 通过贯穿绝缘层 50 的第四过孔 52 与触控 信号线 41 接触；
所述连接走线 43 的关键尺寸小于触控信号线 41 和虚拟走线 42 的关键尺寸以扩大连接走线 43 与第一过孔 31 之间的距离，或者，所述连接走线 43 靠近第一过孔 31 的部分向远离第一过孔 31 的方向弯曲以扩大连接走线 43 与第一过孔 31 之间的距离。
需要说明的是，为保证金属走线层 40 的关键尺寸均一性（关键尺寸指的是走线的线宽），因此在金属走线层 40 中设置了虚拟走线 42 ，底部透明电极 60 与触控 信号线 41 接触从而接收触控信号，为了避免虚拟走线 42 置空而 累积静电，本发明在在金属走线层 40 中设置连接走线 43 来连接触控信号线 41 与虚拟走线 42 ，使虚拟走线 42 与底部透明电极 60 连接，但是连接走线 43 的位置受限而与第一过孔 31 的距离很近，由于连接走线 43 仅用于连接触控信号线 41 与虚拟走线 42 ，对金属走线层 40 的关键尺寸均一性的影响不大，因此可以减小连接走线 43 的关键尺寸，或者，将连接走线 43 靠近第一过孔 31 的部分向远离第一过孔 31 的方向弯曲，来扩大连接走线 43 与第一过孔 31 之间的距离，防止连接走线 43 掉入第一过孔 31 中与 TFT 层 20 接触，避免顶部透明电极 80 与底部透明电极 60 直接短接从而导致显示面板触控不良。
具体的，所述底部透明电极 60 包括间隔分布的多个片电极 61 ，所述虚拟走线 42 位于相邻两个片电极 61 之间的间隙处（即虚拟走线 42 的上方没有底部透明电极 60 ），因此虚拟走线 42 无法通过开孔直接连接至底部透明电极 60 ，而需要连接走线 43 连接虚拟走线 42 与触控 信号线 41 ，使虚拟走线 42 连接至底部透明电极 60 。
具体的，所述连接走线 43 包括连接触控信号线 41 的第一部分 431 、连接虚拟走线 42 的第二部分 432 以及连接第一部分 431 与第二部分 432 并向远离第一过孔 31 的方向弯曲的第三部分 433 。
具体的，所述 TFT 层 20 包括设于所述衬底基板 10 上的有源层 21 、设于所述有缘层 21 上的栅极绝缘层 22 、设于所述栅极绝缘层 22 上的栅极 23 、设于所述栅极 23 上的层间绝缘层 24 以及设于所述层间绝缘层 24 上的源极 25 和漏极 26 。
进一步的，所述有源层 21 包括位于栅极 23 下方的沟道区 211 、位于所述沟道区 211 两侧的离子轻掺杂区 212 以及分别位于所述离子轻掺杂区 212 两侧的源极接触区 213 和漏极接触区 214 ；所述源极 25 通过贯穿层间绝缘层 24 和栅极绝缘层 22 的第五过孔 241 与源极接触区 213 接触；所述漏极 26 通过贯穿层间绝缘层 24 和栅极绝缘层 22 的第六过孔 242 与漏极接触区 214 接触。
具体的，所述顶部透明电极 80 与 TFT 层 20 中的漏极 26 接触。
具体的，所述衬底基板 10 中还设有位于有源层 21 下方的遮光层 11 ，用于阻挡漏光。
进一步的，当所述连接走线 43 的关键尺寸小于触控信号线 41 和虚拟走线 42 的关键尺寸以扩大连接走线 43 与第一过孔 31 之间的距离时，所述连接走线 43 位于栅极 23 的上方，后续触控阵列基板与彩膜基板对组成盒为显示面板时，可通过彩膜基板上的黑矩阵遮挡栅极 23 与连接走线 43 ，防止连接走线 43 降低开口率。
进一步的，当所述连接走线 43 靠近第一过孔 31 的部分向远离第一过孔 31 的方向弯曲以扩大连接走线 43 与第一过孔 31 之间的距离时，所述连接走线 43 的第一部分 431 和第二部分 432 均位于栅极 23 的上方，所述连接走线 43 的第三部分 433 位于遮光层 11 的上方，使第三部分 433 向远离第一过孔 31 的方向弯曲时也能被遮光层 11 遮挡而不会降低开口率。
基于上述触控阵列基板，本发明还提供一种触控显示面板，包括上述的触控阵列基板。
综上所述，本发明的触控阵列基板包括：衬底基板、设于所述衬底基板上的 TFT 层、设于所述 TFT 层上的平坦层、设于所述平坦层上的金属走线层、设于所述金属走线层上的绝缘层、设于所述绝缘层上的底部透明电极、设于所述底部透明电极上的钝化层以及设于所述钝化层上的顶部透明电极；所述顶部透明电极通过贯穿平坦层的第一过孔、贯穿绝缘层的第二过孔以及贯穿钝化层的第三过孔与 TFT 层接触；所述金属走线层包括触控信号线、虚拟走线以及连接触控信号线与虚拟走线的连接走线；所述底部透明电极通过贯穿绝缘层的第四过孔与触控信号线接触；所述连接走线的关键尺寸小于触控信号线和虚拟走线的关键尺寸以扩大连接走线与第一过孔之间的距离，或者，所述连接走线靠近第一过孔的部分向远离第一过孔的方向弯曲以扩大连接走线与第一过孔之间的距离，防止连接走线掉入第一过孔中与 TFT 层接触，避免顶部透明电极与底部透明电极直接短接从而导致显示面板触控不良。本发明的触控显示面板，能够避免顶部透明电极与底部透明电极直接短接从而导致显示面板触控不良。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (18)

  1. 一种触控阵列基板，包括：衬底基板、设于所述衬底基板上的TFT层、设于所述TFT层上的平坦层、设于所述平坦层上的金属走线层、设于所述金属走线层上的绝缘层、设于所述绝缘层上的底部透明电极、设于所述底部透明电极上的钝化层以及设于所述钝化层上的顶部透明电极；
    所述顶部透明电极通过贯穿平坦层的第一过孔、贯穿绝缘层的第二过孔以及贯穿钝化层的第三过孔与TFT层接触；
    所述金属走线层包括触控信号线、虚拟走线以及连接触控信号线与虚拟走线的连接走线；
    所述底部透明电极通过贯穿绝缘层的第四过孔与触控信号线接触；
    所述连接走线的关键尺寸小于触控信号线和虚拟走线的关键尺寸以扩大连接走线与第一过孔之间的距离，或者，所述连接走线靠近第一过孔的部分向远离第一过孔的方向弯曲以扩大连接走线与第一过孔之间的距离。
  2. 如权利要求1所述的触控阵列基板，其中，所述底部透明电极包括间隔分布的多个片电极，所述虚拟走线位于相邻两个片电极之间的间隙处。
  3. 如权利要求1所述的触控阵列基板，其中，所述TFT层包括设于所述衬底基板上的有源层、设于所述有缘层上的栅极绝缘层、设于所述栅极绝缘层上的栅极、设于所述栅极上的层间绝缘层以及设于所述层间绝缘层上的源极和漏极。
  4. 如权利要求3所述的触控阵列基板，其中，所述有源层包括位于栅极下方的沟道区、位于所述沟道区两侧的离子轻掺杂区以及分别位于所述离子轻掺杂区两侧的源极接触区和漏极接触区；所述源极通过贯穿层间绝缘层和栅极绝缘层的第五过孔与源极接触区接触；所述漏极通过贯穿层间绝缘层和栅极绝缘层的第六过孔与漏极接触区接触。
  5. 如权利要求3所述的触控阵列基板，其中，所述顶部透明电极与TFT层中的漏极接触。
  6. 如权利要求3所述的触控阵列基板，其中，所述衬底基板中还设有位于有源层下方的遮光层。
  7. 如权利要求3所述的触控阵列基板，其中，所述连接走线位于栅极的上方。
  8. 如权利要求6所述的触控阵列基板，其中，所述连接走线包括连接触控信号线的第一部分、连接虚拟走线的第二部分以及连接第一部分与第二部分并向远离第一过孔的方向弯曲的第三部分。
  9. 如权利要求8所述的触控阵列基板，其中，所述连接走线的第一部分和第二部分均位于栅极的上方，所述连接走线的第三部分位于遮光层的上方。
  10. 一种触控显示面板，包括触控阵列基板，所述触控阵列基板包括：衬底基板、设于所述衬底基板上的TFT层、设于所述TFT层上的平坦层、设于所述平坦层上的金属走线层、设于所述金属走线层上的绝缘层、设于所述绝缘层上的底部透明电极、设于所述底部透明电极上的钝化层以及设于所述钝化层上的顶部透明电极；
    所述顶部透明电极通过贯穿平坦层的第一过孔、贯穿绝缘层的第二过孔以及贯穿钝化层的第三过孔与TFT层接触；
    所述金属走线层包括触控信号线、虚拟走线以及连接触控信号线与虚拟走线的连接走线；
    所述底部透明电极通过贯穿绝缘层的第四过孔与触控信号线接触；
    所述连接走线的关键尺寸小于触控信号线和虚拟走线的关键尺寸以扩大连接走线与第一过孔之间的距离，或者，所述连接走线靠近第一过孔的部分向远离第一过孔的方向弯曲以扩大连接走线与第一过孔之间的距离。
  11. 如权利要求10 所述的触控显示面板，其中，所述底部透明电极包括间隔分布的多个片电极，所述虚拟走线位于相邻两个片电极之间的间隙处。
  12. 如权利要求10 所述的触控显示面板，其中，所述TFT 层包括设于所述衬底基板上的有源层、设于所述有缘层上的栅极绝缘层、设于所述栅极绝缘层上的栅极、设于所述栅极上的层间绝缘层以及设于所述层间绝缘层上的源极和漏极。
  13. 如权利要求12 所述的触控显示面板，其中，所述有源层包括位于栅极下方的沟道区、位于所述沟道区两侧的离子轻掺杂区以及分别位于所述离子轻掺杂区两侧的源极接触区和漏极接触区；所述源极通过贯穿层间绝缘层和栅极绝缘层的第五过孔与源极接触区接触；所述漏极通过贯穿层间绝缘层和栅极绝缘层的第六过孔与漏极接触区接触。
  14. 如权利要求12 所述的触控显示面板，其中，所述顶部透明电极与TFT 层中的漏极接触。
  15. 如权利要求12 所述的触控显示面板，其中，所述衬底基板中还设有位于有源层下方的遮光层。
  16. 如权利要求12 所述的触控显示面板，其中，所述连接走线位于栅极的上方。
  17. 如权利要求15 所述的触控显示面板，其中，所述连接走线包括连接触控信号线的第一部分、连接虚拟走线的第二部分以及连接第一部分与第二部分并向远离第一过孔的方向弯曲的第三部分。
  18. 如权利要求17 所述的触控显示面板，其中，所述连接走线的第一部分和第二部分均位于栅极的上方，所述连接走线的第三部分位于遮光层的上方。
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