WO2020073415A1 - 显示面板的制程和显示面板 - Google Patents

显示面板的制程和显示面板 Download PDF

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Publication number
WO2020073415A1
WO2020073415A1 PCT/CN2018/115208 CN2018115208W WO2020073415A1 WO 2020073415 A1 WO2020073415 A1 WO 2020073415A1 CN 2018115208 W CN2018115208 W CN 2018115208W WO 2020073415 A1 WO2020073415 A1 WO 2020073415A1
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WO
WIPO (PCT)
Prior art keywords
metal
layer
substrate
metal layer
area
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Application number
PCT/CN2018/115208
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English (en)
French (fr)
Inventor
吴川
Original Assignee
惠科股份有限公司
重庆惠科金渝光电科技有限公司
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Priority to US16/313,885 priority Critical patent/US11119362B1/en
Publication of WO2020073415A1 publication Critical patent/WO2020073415A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134318—Electrodes characterised by their geometrical arrangement having a patterned common electrode

Definitions

  • the present application relates to the field of display technology, in particular to a manufacturing process of a display panel and a display panel.
  • the liquid crystal display has many advantages such as thin body, power saving, no radiation, etc., and has been widely used.
  • Most of the liquid crystal displays on the market are backlight type liquid crystal displays, which include a liquid crystal panel and a backlight module (Backlight Module).
  • the working principle of the liquid crystal panel is to place liquid crystal molecules in two parallel substrates, and apply a driving voltage to the two glass substrates to control the rotation direction of the liquid crystal molecules, so as to refract the light of the backlight module to generate a picture.
  • the liquid crystal is rotated by the vertical electric field loaded between the color filter substrate and the array substrate, so that the liquid crystal forms a different deflection angle, thereby making The upper polarizer can transmit light of different intensities.
  • the electric field on the color filter substrate is transferred from the array substrate to the color filter substrate by the Transfer Pad.
  • a circle of mesh common electrode traces of the first metal layer and the second metal layer is arranged around the panel, and the Transfer Pad is designed at a suitable position.
  • Transfer (Pad) Transfer area position on the first metal layer or the first metal layer and the second metal layer is covered with a transparent electrode layer to form Transfer Pad (transfer area), in the actual process of panel
  • the transmitted common electrode signal is transferred to the common electrode of the color filter substrate through the gold ball through the first metal layer in the Transfer Pad area, and then transmitted from the array substrate to the color filter substrate.
  • the transfer area is made in the sealant area outside the AA area (viewable area) on the side of the array substrate, and then the Auball is spread at the process stage of the liquid crystal cell to form the pixel electrode and Electrical connection between common electrodes.
  • frame glue and gold balls are applied, it will cause abnormal display.
  • the purpose of the present application is to provide a manufacturing process of a display panel and a display panel to solve the abnormal display of the display panel.
  • the present application provides a manufacturing process of a display panel, including the steps of:
  • the width of the passivation recessed region is wider than that of the second metal
  • the width of the recessed area, the exposed surface of the second metal layer is the second metal transition area
  • a gold ball is provided on the first surface of the transparent electrode layer, and the gold ball is connected to the transparent electrode layer of the first substrate and the common electrode of the second substrate.
  • a transparent electrode layer is formed on the first surface of the second metal layer, so that the transparent electrode layer covers the second metal transition region, and the transparent electrode layer passes through the second metal transition region
  • the formed transparent electrode layer covers the surface of the first metal layer corresponding to the first surface of the transition region, and the gate insulating layer and the second metal layer correspond to the side wall of the second metal recessed region and the second metal transition At the reception area.
  • a transparent electrode layer is formed on the first surface of the second metal layer, so that the transparent electrode layer covers the second metal transition region, and the transparent electrode layer passes through the second metal transition region
  • the formed transparent electrode layer covers the first metal recessed area, and the gate insulating layer and the second metal layer correspond to the side walls of the second metal recessed area and the second metal transition area.
  • the common line of the first metal layer and the first substrate is formed by the same process and is electrically connected to each other.
  • the common line of the second metal layer and the first substrate is formed by the same manufacturing process and electrically connected to each other.
  • the common line of the first substrate and the first metal layer or the second metal layer are made through the same mask, and the first metal layer and the second metal layer are electrically connected through vias.
  • the application also discloses a display panel, including:
  • a second substrate opposite to the first substrate
  • the first substrate includes a common line, and the second substrate includes a common electrode;
  • the gold ball is provided in the non-display area of the display panel, and connects the common line of the first substrate and the common electrode of the second substrate, and the position of the gold ball is the transition area;
  • the first substrate includes:
  • the first metal layer is provided on the substrate
  • the gate insulation layer is provided on the first surface of the first metal layer, and the corresponding transition area is hollowed out to form a gate insulation depression area;
  • a second metal layer is provided on the first surface of the gate insulating layer, and the second metal layer is hollowed out corresponding to the gate insulating recessed area to form a second metal recessed area;
  • a passivation layer is provided on the first surface of the second metal layer.
  • the passivation layer is hollowed out corresponding to the gate insulating recessed area to form a passivated recessed area.
  • the width of the passivated recessed area is greater than that of the second metal layer
  • the width of the recessed area, the exposed surface of the second metal layer is the second metal transition area;
  • the gold ball is disposed at a position of the transparent electrode layer corresponding to the second metal recessed area, and connects the transparent electrode layer of the first substrate and the common electrode of the second substrate.
  • the transparent electrode layer covers the second metal transition region, and at the same time covers the side wall corresponding to the second metal recessed region on the surface of the first metal layer, the gate insulating layer and the second metal layer .
  • the first metal recessed area is located at the hollowed out portion of the first metal layer corresponding to the transition area; the transparent electrode layer covers the first metal recessed area, and the gate insulating layer corresponds to the second metal layer The side wall on the side of the second metal recessed area and the second metal transition area.
  • the present application also discloses a display device including the above-mentioned display panel.
  • the liquid crystal is rotated by the vertical electric field applied between the first substrate and the second substrate, so that the liquid crystal forms a different deflection angle, so that the upper polarizer can transmit different Intensity of light.
  • a conductive transition area should be provided in the sealant of the first substrate so that the gold ball contacts the upper and lower substrates; Set the location of the golden ball, you can not set the transfer area.
  • a transparent electrode layer communicating with the common line is laid; and where the transfer area is not provided, the common line can be hollowed out in a grid to cure the sealant by light, this solution
  • the gold ball and sealant are applied after the box is applied, if the gold ball is squeezed out of the transfer area, it will cause poor conduction between the upper and lower substrates, or the box thickness is abnormal, resulting in abnormal display.
  • the transparent electrode layer covers the second metal transfer area, and the transparent electrode layer communicates with the common line through the second metal transfer area, and a gold ball is provided on the first surface of the transparent electrode layer so that the gold ball
  • the transparent electrode layer that connects the first substrate and the common electrode of the second substrate, and finally the common line of the first substrate and the common electrode of the second substrate are connected to each other.
  • FIG. 1 is a schematic diagram of a basic structure of a display panel according to an embodiment of the present application.
  • Fig. 2 is an enlarged schematic view of the area A-A 'in Fig. 1;
  • FIG. 3 is a schematic diagram of a cross-sectional view of the area A-A 'in FIG. 1;
  • FIG. 4 is a schematic diagram of a manufacturing process of a display panel according to an embodiment of the application.
  • FIG. 5 is a schematic diagram (1) of a structure of a display panel according to an embodiment of the application.
  • FIG. 6 is a schematic diagram (2) of a structure of a display panel according to an embodiment of the application.
  • FIG. 7 is a schematic diagram (3) of a structure of a display panel according to an embodiment of the application.
  • FIG. 8 is a schematic structural diagram of a display device according to an embodiment of the application.
  • the features defined as “first” and “second” may explicitly or implicitly include one or more of the features.
  • the meaning of “plurality” is two or more.
  • the term “including” and any variations thereof are intended to cover non-exclusive inclusions.
  • connection should be understood in a broad sense, for example, it can be fixed or detachable Connected, or connected integrally; either mechanically or electrically; directly connected, or indirectly connected through an intermediary, or internally connected between two components.
  • installation should be understood in a broad sense, for example, it can be fixed or detachable Connected, or connected integrally; either mechanically or electrically; directly connected, or indirectly connected through an intermediary, or internally connected between two components.
  • the first surface corresponds to the upper surface.
  • the present application discloses a manufacturing process of a display panel, including steps:
  • a passivation layer 50 is formed on the first surface of the second metal layer 40, and a portion of the passivation layer 50 corresponding to the transition region 202 is etched away to form a passivation recessed region 501, The width is wider than the width of the second metal recessed area 401, and the exposed surface of the second metal layer 40 is the second metal transition area 90;
  • a transparent electrode layer 60 is formed on the first surface of the second metal layer 40 so that the transparent electrode layer 60 covers the second metal transfer region 90, and the transparent electrode layer 60 is transferred through the second metal
  • the area 90 communicates with the common line to form a first substrate
  • a gold ball 70 is provided on the first surface of the transparent electrode layer 60, and the gold ball 70 communicates with the transparent electrode layer 60 of the first substrate and the common electrode of the second substrate 80.
  • the first substrate is an array substrate
  • the second substrate 80 is a color filter substrate
  • VA Vertical Alignment
  • the liquid crystal is rotated by the vertical electric field loaded between the array substrate and the color filter substrate, so that the liquid crystal forms a different deflection angle, so that the upper polarizer can transmit different strengths Light.
  • a conductive transition area 202 is provided in the sealant of the array substrate so that the gold ball 70 contacts the upper and lower substrates; If the position of the golden ball 70 is set, the transfer area 202 may not be provided.
  • a transparent electrode layer 60 connected to the common line is laid; and at a position where the transfer area 202 is not provided, the common line can be hollowed out in a grid to cure the sealant by light, which
  • the gold ball 70 and the sealant are applied after the box is applied, if the gold ball 70 is squeezed to protrude from the transition area 202, it will cause poor conduction between the upper and lower substrates, or an abnormal box thickness, resulting in an abnormal display.
  • the transparent electrode layer 60 covers the second metal transfer region 90, and the transparent electrode layer 60 communicates with the common line through the second metal transfer region 90, and a gold ball 70 is provided on the first surface of the transparent electrode layer 60 So that the gold ball 70 communicates with the transparent electrode layer 60 of the array substrate and the common electrode of the color filter substrate, and finally the common line of the array substrate and the common electrode of the color filter substrate are connected to each other.
  • the second metal transition region 90 widens the overall width of the transition region 202, the applied sealant can avoid overflowing the transition region 202 and improve the display quality.
  • the substrate 10 may be a glass substrate.
  • a transparent electrode layer 60 is formed on the first surface of the second metal layer 40 so that the transparent electrode layer 60 covers the second metal transition region 90, and the transparent electrode layer 60 passes through
  • the step of connecting the second metal transition area 90 with the common line includes:
  • the formed transparent electrode layer 60 covers the surface of the first metal layer 20 corresponding to the first surface of the transfer region 202, and the side of the gate insulating layer 30 and the second metal layer 40 corresponding to the second metal recessed region 401 90 places on the wall and the second metal transfer area.
  • the transparent electrode layer 60 is formed to cover the surface of the first surface of the first metal layer 20 corresponding to the transition area 202, the transparent electrode layer 60 directly contacts the first metal layer 20, and the conductivity is better.
  • a manufacturing process of a display panel 2 including steps:
  • S43 Form a second metal layer 40 on the first surface of the gate insulating layer 30, and etch away the portion of the second metal layer 40 corresponding to the gate insulating recessed area 301 to form a second metal recessed area 401 ;
  • a transparent electrode layer 60 is formed on the first surface of the second metal layer 40, the formed transparent electrode layer 60 covers the first metal recessed area 201, and corresponds to the gate insulating layer 30 and the second metal layer 40 90 sidewalls of the second metal recessed area 401 and the second metal transition area 90;
  • the transparent electrode layer 60 communicates with the common line through the second metal transition region 90 to form a first substrate;
  • a gold ball 70 is provided on the first surface of the transparent electrode layer 60, and the gold ball 70 communicates with the transparent electrode layer 60 of the first substrate and the common electrode of the second substrate 80.
  • a part of the first metal layer 20 corresponding to the transition region 202 is partially etched to form a first metal recessed region 201, and the formed transparent electrode layer 60 covers the first metal recessed region 201 and at the same time covers the gate insulating layer 30
  • the second metal layer 40 corresponds to the side wall of the second metal recessed area 401 and the second metal transition area 90, so that the depth of the transition area 202 is deepened, and the applied sealant can avoid overflowing the transition area 202 and improve Display quality.
  • the common lines of the first metal layer 20 and the first substrate are formed by the same process and are electrically connected to each other.
  • the first substrate is an array substrate, and the common line of the first metal layer 20 and the array substrate is formed by the same process, and it is not necessary to connect the electrodes by drilling, which reduces the process.
  • the common line of the second metal layer 40 and the first substrate is formed by the same process and is electrically connected to each other.
  • the first substrate is an array substrate
  • the common line of the second metal layer 40 and the array substrate is formed by the same process, and there is no need to connect the electrodes by drilling, which reduces the process.
  • the common line of the first substrate and the first metal layer 20 or the second metal layer 40 are made through the same mask, and the first metal layer 20 and the second metal layer 40 pass through Hole electrical connection.
  • the first substrate is an array substrate, and the first metal layer 20 and the second metal layer 40 are electrically connected through vias, which reduces the possibility of disconnection caused by wire breakage; the first common electrode of the array substrate and the first metal When the layers 20 are in the same layer and electrically connected, the second metal layer 40 and the second metal layer 40 of the display area 100 are insulated; when the first common electrode of the array substrate and the second metal layer 40 are in the same layer and electrically connected, the first metal layer 20 and the first metal layer 20 of the display area 100 are insulated to prevent crosstalk.
  • a display panel 2 including:
  • the second substrate 80 is opposite to the first substrate
  • the first substrate includes a common line, and the second substrate 80 includes a common electrode;
  • the gold ball 70 is provided in the non-display area 200 of the display panel 2 to conduct the common line of the first substrate and the common electrode of the second substrate 80, and the gold ball 70 is provided at the transition area 202;
  • the first substrate includes:
  • the first metal layer 20 is provided on the substrate;
  • the gate insulating layer 30 is disposed on the first surface of the first metal layer 20, and corresponding to the transition region 202 is hollowed out to form a gate insulating recessed region 301;
  • the second metal layer 40 is disposed on the first surface of the gate insulating layer 30, and the second metal layer 40 is hollowed out corresponding to the gate insulating recessed area 301 to form a second metal recessed area 401;
  • a passivation layer 50 is provided on the first surface of the second metal layer 40, and the passivation layer 50 is hollowed out corresponding to the gate insulating depression 301 to form a passivation depression 501.
  • the passivation depression 501 The width is greater than the width of the recessed region of the second metal layer 40, and the exposed surface of the second metal layer 40 is the second metal transfer region 90;
  • the transparent electrode layer 60 covers the second metal transition region 90, and the transparent electrode layer 60 communicates with the common line of the first substrate;
  • the gold ball 70 is disposed at a position of the transparent electrode layer 60 corresponding to the second metal recessed area 401, and connects the transparent electrode layer 60 of the first substrate and the common electrode of the second substrate 80.
  • VA Vertical Alignment
  • the liquid crystal is rotated by the vertical electric field loaded between the first substrate and the second substrate 80, so that the liquid crystal forms a different deflection angle, so that the upper polarizer can transmit Light of different intensities.
  • a conductive transition area 202 is provided in the sealant of the first substrate so that the gold ball 70 contacts the upper and lower substrates ; Without setting the position of the golden ball 70, the transfer area 202 may not be provided.
  • a transparent electrode layer 60 communicating with the common line is laid; and where the transfer area 202 is not provided, the common line can be hollowed out in a grid to cure the sealant by light,
  • the gold ball 70 and the sealant are applied after the box is applied, if the gold ball 70 is squeezed out of the transition area 202, it will cause poor conduction between the upper and lower substrates, or the box thickness is abnormal, resulting in abnormal display .
  • the transparent electrode layer 60 covers the second metal transfer region 90, and the transparent electrode layer 60 communicates with the common line through the second metal transfer region 90, and a gold ball 70 is provided on the first surface of the transparent electrode layer 60 So that the gold ball 70 communicates with the transparent electrode layer 60 of the first substrate and the common electrode of the second substrate 80, and finally the common line of the first substrate and the common electrode of the second substrate 80 are electrically connected to each other.
  • the second metal transition region 90 widens the overall width of the transition region 202, the applied sealant can avoid overflowing the transition region 202 and improve the display quality.
  • the transparent electrode layer 60 covers the second metal transfer region 90 and covers the surface of the first metal layer 20, the gate insulating layer 30 and the second metal
  • the layer 40 corresponds to the side wall of the second metal recessed area 401.
  • the transparent electrode layer 60 is formed to cover the surface of the first surface of the first metal layer 20 corresponding to the transition area 202, the transparent electrode layer 60 directly contacts the first metal layer 20, and the conductivity is better.
  • the first metal recessed area 201 is located at the hollowed-out portion of the first metal layer 20 corresponding to the transition area 202; the transparent electrode layer 60 covers the first metal recessed area 201, and the gate insulating layer 30 and the second metal layer 40 correspond to the side wall of the second metal recessed region 401 and the second metal transfer region 90.
  • a part of the first metal layer 20 corresponding to the transition region 202 is partially etched to form a first metal recessed region 201, and the formed transparent electrode layer 60 covers the first metal recessed region 201 and at the same time covers the gate insulating layer 30
  • the second metal layer 40 corresponds to the side wall of the second metal recessed area 401 and the second metal transition area 90, so that the depth of the transition area 202 is deepened, and the applied sealant can avoid overflowing the transition area 202 and improve Display quality.
  • the thickness of the first metal layer 20 is generally 1500-8000 or
  • the width of the second metal transfer region 90 near the first connection region 201 is X1, generally the range of X1 is 5 ⁇ m ⁇ X1 ⁇ 500 ⁇ m or 10 ⁇ m ⁇ X1 ⁇ 500 ⁇ m; the second metal transfer region near the second connection region 203 The width of the region 90 is X2, and generally the range of X2 is 5 ⁇ m ⁇ X2 ⁇ 500 ⁇ m or 10 ⁇ m ⁇ X1 ⁇ 500 ⁇ m.
  • a display panel 2 includes:
  • a color film substrate, the array substrate and the color film substrate are oppositely arranged;
  • the array substrate includes a common line, and the color filter substrate includes a common electrode;
  • the gold ball 70 is provided in the non-display area 200 of the display panel 2 to conduct the common line of the array substrate and the common electrode of the color filter substrate.
  • the position of the gold ball 70 is the transition area 202;
  • the array substrate includes:
  • a first metal layer 20 is provided on the substrate, and the first metal layer 20 is hollowed out corresponding to the transition area 202 to form a first metal recessed area 201;
  • the gate insulating layer 30 is disposed on the first surface of the first metal layer 20 and is hollowed out corresponding to the first metal recessed area 201 to form a gate insulating recessed area 301.
  • the width of the gate insulating recessed area 301 is greater than the first The width of a metal recessed area 201, and the exposed surface of the first metal layer is the first metal transition area 91;
  • the second metal layer 40 is disposed on the first surface of the gate insulating layer 30, and the second metal layer 40 is hollowed out corresponding to the gate insulating recessed area 301 to form a second metal recessed area 401;
  • a passivation layer 50 is provided on the first surface of the second metal layer 40, and the passivation layer 50 is hollowed out corresponding to the second metal depression 401 to form a passivation depression 501;
  • the transparent electrode layer 60 covers the first metal recessed area 201 and the first metal transition area 91, and the transparent electrode layer 60 communicates with the common line of the array substrate;
  • the gold ball 70 is disposed at a position of the transparent electrode layer 60 corresponding to the first metal recessed area 201, and connects the transparent electrode layer 60 of the first substrate and the common electrode of the second substrate 80.
  • a metal material layer is covered on the substrate, and the metal material layer is partially etched away corresponding to the transition region 202 to form a first metal recessed region 201, and the first metal recessed region 201
  • a transparent electrode layer 60 is formed on the first surface, and the transparent electrode layer 60 is electrically connected to the common line, and then a gold ball 70 is provided on the first surface of the transparent electrode layer 60.
  • the gold ball 70 connects the common line of the array substrate and the color filter substrate.
  • the common electrode and the first metal recessed area 201 increase the depth of the transfer area 202, which can prevent the coated gold ball 70 and the sealant from overflowing the transfer area 202, thereby improving the display quality.
  • a display device 1 including the above-mentioned display panel 2.
  • the panel of this application may be a TN panel (full name Twisted Nematic), an IPS panel (In-Plane Switching), a VA panel (Multi-domain Vertical Alignment, multi-quadrant vertical alignment technology), , Can also be other types of panels, just apply.
  • TN panel full name Twisted Nematic
  • IPS panel In-Plane Switching
  • VA panel Multi-domain Vertical Alignment, multi-quadrant vertical alignment technology

Abstract

一种显示面板的制程和显示面板。制程包括形成公共线、公共电极，以及透明电极层（60），透明电极层（60）与公共线连通；透明电极层（60）上设置金球（70），并使金球（70）连通透明电极层（60）和公共电极。

Description

显示面板的制程和显示面板
本申请要求于2018年10月10日提交中国专利局、申请号为CN201811179579.7、发明名称为“一种显示面板的制程和显示面板”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及显示技术领域，尤其涉及一种显示面板的制程和显示面板。
背景技术
这里的陈述仅提供与本申请有关的背景信息，而不必然地构成现有技术。
液晶显示器具有机身薄、省电、无辐射等众多优点，得到了广泛的应用。市场上的液晶显示器大部分为背光型液晶显示器，其包括液晶面板及背光模组(Backlight Module)。液晶面板的工作原理是在两片平行的基板当中放置液晶分子，并在两片玻璃基板上施加驱动电压来控制液晶分子的旋转方向，以将背光模组的光线折射出来产生画面。
在VA(Vertical Alignment)技术的LCD(Liquid Crystal Display，液晶显示器)中，液晶由加载在彩膜基板和阵列基板之间形成的垂直电场使之转动，从而使液晶形成不同的偏转角度，从而使得上偏光片能透过不同强度的光。在电场加载过程中，彩膜基板上的电场由Transfer Pad(转接区)将信号从阵列基板导入至彩膜基板。通常在面板周边设置一圈第一金属层和第二金属层的网状公共电极走线，在合适的位置设计Transfer Pad(转接区)。Transfer Pad(转接区)位置在第一金属层或者第一金属层和第二金属层上铺上透明电极层即形成Transfer Pad(转接区)，面板实际工作过程中，由第一金属层传输的公共电极信号在Transfer Pad区域通过第一金属层经过金球最后传到彩膜基板的公共电极，从阵列基板传输至彩膜基板。
其中，在阵列基板侧AA区(可视区)外的框胶(sealant)区域内制作转接区(transfer pad)，然后在液晶盒制程阶段进行金球(Auball)撒布，以形成像素电极与共用电极之间的电气连接。但是，在框胶和金球涂布的时候，会造成显示异常。
技术解决方案
本申请的目的在于提供一种显示面板的制程和显示面板，以解决显示面板的显示异常。
为实现上述目的，本申请提供了一种显示面板的制程，包括步骤：
在衬底上覆盖一层金属材料层，形成位于非显示区的第一金属层和位于显示区的公共线；
在第一金属层的第一表面形成栅极绝缘层，并把所述栅极绝缘层对应转接区的部位蚀刻掉形成栅极绝缘凹陷区；
在所述栅极绝缘层的第一表面形成第二金属层，并把所述第二金属层对应所述栅极绝缘凹陷区的部位蚀刻掉形成第二金属凹陷区；
在所述第二金属层的第一表面形成钝化层，并把所述钝化层对应转接区的部位蚀刻掉形成钝化凹陷区，所述钝化凹陷区的宽度宽于第二金属凹陷区的宽度，第二金属层露出的表面为第二金属转接区；
在所述第二金属层的第一表面形成透明电极层，使得所述透明电极层覆盖所述第二金属转接区，所述透明电极层通过所述第二金属转接区与所述公共线连通，以形成第一基板；
形成设有公共电极的第二基板；
在所述透明电极层的第一表面设置金球，并使所述金球连通所述第一基板的透明电极层和所述第二基板的公共电极。
可选的，在所述第二金属层的第一表面形成透明电极层，使得所述透明电极层覆盖所述第二金属转接区，所述透明电极层通过所述第二金属转接区与所述公共线连通的步骤包括：
形成的透明电极层覆盖在所述第一金属层对应所述转接区的第一表面的表面，以及栅极绝缘层、第二金属层对应第二金属凹陷区的侧壁和第二金属转接区处。
可选的，在所述第二金属层的第一表面形成透明电极层，使得所述透明电极层覆盖所述第二金属转接区，所述透明电极层通过所述第二金属转接区与所述公共线连通的步骤包括：
把第一金属层对应转接区的部位部分蚀刻掉形成第一金属凹陷区；
形成的透明电极层覆盖在第一金属凹陷区，以及栅极绝缘层、第二金属层对应第二金属凹陷区的侧壁和第二金属转接区处。
可选的，所述第一金属层和所述第一基板的公共线通过同一道制程形成，且相互电连接。
可选的，所述第二金属层和所述第一基板的公共线通过同一道制程形成，且相互电连接。
可选的，所述第一基板的公共线与所述第一金属层或第二金属层通过同一道光罩制成，所述第一金属层和第二金属层通过过孔电连接。
本申请还公开了一种显示面板，包括：
第一基板；
第二基板，和所述第一基板对置；
所述第一基板包括公共线，所述第二基板包括公共电极；
金球，设置在所述显示面板的非显示区，导通所述第一基板的公共线和第二基板的公共电极，所述金球设置的位置为转接区；
其中，所述第一基板包括：
衬底；
第一金属层，设置在所述衬底上；
栅极绝缘层，设置在所述第一金属层第一表面，对应转接区镂空，形成栅极绝缘凹陷区；
第二金属层，设置在所述栅极绝缘层第一表面，所述第二金属层对应栅极绝缘凹陷区的部位镂空，形成第二金属凹陷区；
钝化层，设置在所述第二金属层第一表面，所述钝化层对应栅极绝缘凹陷区的部位镂空，形成钝化凹陷区，所述钝化凹陷区的宽度大于第二金属层凹陷区的宽度，第二金属层露出的表面为第二金属转接区；
透明电极层，覆盖第二金属转接区，所述透明电极层与所述第一基板的公共线连通；
所述金球设置在所述透明电极层对应所述第二金属凹陷区的位置，连通所述第一基板的透明电极层和所述第二基板的公共电极。
可选的，所述透明电极层覆盖所述第二金属转接区，同时覆盖在所述第一金属层表面、栅极绝缘层以及第二金属层对应第二金属凹陷区一侧的侧壁。
可选的，第一金属凹陷区，位于所述第一金属层对应所述转接区的镂空处；所述透明电极层覆盖第一金属凹陷区，以及栅极绝缘层、第二金属层对应第二金属凹陷区一侧 的侧壁和第二金属转接区处。
本申请还公开了一种显示装置，包括上述的显示面板。
在VA(Vertical Alignment)技术的LCD中，液晶由加载在第一基板和第二基板之间形成的垂直电场使之转动，从而使液晶形成不同的偏转角度，从而使得上偏光片能透过不同强度的光。在电场加载过程中，为了使第一基板上的公共线和第二基板的公共电极相互导通，第一基板的密封胶内要设置导电的转接区，以便金球接触上下基板；而不设置金球的位置，则可不设置转接区。在第一基板的转接区，铺设与公共线连通的透明电极层；而在不设置转接区的位置处，则可对公共线镂空成网格状以便对密封胶照光固化，这种方案，在对盒后，金球和密封胶涂布时，金球若被挤压突出转接区，就会造成上下基板导通不好，或盒厚异常，造成显示异常。而本方案中，透明电极层覆盖第二金属转接区，并且透明电极层通过第二金属转接区与公共线连通，而在透明电极层的第一表面设置金球，使得所述金球连通所述第一基板的透明电极层和第二基板的公共电极，最后实现第一基板的公共线和第二基板的公共电极相互导通。这样由于第二金属转接区加宽了转接区的整体宽度，使得涂布的密封胶避免溢出转接区，提高显示质量。
附图说明
所包括的附图用来提供对本申请实施例的进一步的理解，其构成了说明书的一部分，用于例示本申请的实施方式，并与文字描述一起来阐释本申请的原理。显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。在附图中：
图1是本申请一实施例一种显示面板基本结构的示意图；
图2是图1中A-A’区域放大的示意图；
图3是图1中A-A’区域剖面图的示意图；
图4是本申请一实施例一种显示面板的制作流程的示意图；
图5是本申请一实施例一种显示面板的结构的示意图(1)；
图6是本申请一实施例一种显示面板的结构的示意图(2)；
图7为本申请一实施例一种显示面板的结构的示意图(3)；
图8为本申请一实施例一种显示装置的结构示意图。
本申请的实施方式
这里所公开的具体结构和功能细节仅仅是代表性的，并且是用于描述本申请的示例性实施例的目的。但是本申请可以通过许多替换形式来具体实现，并且不应当被解释成仅仅受限于这里所阐述的实施例。
在本申请的描述中，需要理解的是，术语“中心”、“横向”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本申请的描述中，除非另有说明，“多个”的含义是两个或两个以上。另外，术语“包括”及其任何变形，意图在于覆盖不排他的包含。
在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本申请中的具体含义。
这里所使用的术语仅仅是为了描述具体实施例而不意图限制示例性实施例。除非上下文明确地另有所指，否则这里所使用的单数形式“一个”、“一项”还意图包括复数。还应当理解的是，这里所使用的术语“包括”和/或“包含”规定所陈述的特征、整数、步骤、操作、单元和/或组件的存在，而不排除存在或添加一个或更多其他特征、整数、步骤、操作、单元、组件和/或其组合。
其中，第一表面对应如上表面。
下面结合附图和可选的实施例对本申请作进一步说明。
如图1至图8所示，在一实施例中，本申请公开了一种显示面板的制程，包括步骤：
在衬底10上覆盖一层金属材料层，形成位于非显示区200的第一金属层20和位于显示区100的公共线；
在第一金属层20的第一表面形成栅极绝缘层30，并把所述栅极绝缘层30对应转接区202的部位蚀刻掉形成栅极绝缘凹陷区301；
在所述栅极绝缘层30的第一表面形成第二金属层40，并把所述第二金属层40对应所述栅极绝缘凹陷区301的部位蚀刻掉形成第二金属凹陷区401；
在所述第二金属层40的第一表面形成钝化层50，并把所述钝化层50对应转接区202的部位蚀刻掉形成钝化凹陷区501，所述钝化凹陷区501的宽度宽于第二金属凹陷区401的宽度，第二金属层40露出的表面为第二金属转接区90；
在所述第二金属层40的第一表面形成透明电极层60，使得所述透明电极层60覆盖所述第二金属转接区90，所述透明电极层60通过所述第二金属转接区90与所述公共线连通，以形成第一基板；
形成设有公共电极的第二基板80；
在所述透明电极层60的第一表面设置金球70，并使所述金球70连通所述第一基板的透明电极层60和所述第二基板80的公共电极。
其中，所述第一基板为阵列基板，所述第二基板80为彩膜基板。
在VA(Vertical Alignment)技术的LCD中，液晶由加载在阵列基板和彩膜基板之间形成的垂直电场使之转动，从而使液晶形成不同的偏转角度，从而使得上偏光片能透过不同强度的光。在电场加载过程中，为了使阵列基板上的公共线和彩膜基板的公共电极相互导通，阵列基板的密封胶内要设置导电的转接区202，以便金球70接触上下基板；而不设置金球70的位置，则可不设置转接区202。在阵列基板的转接区202，铺设与公共线连通的透明电极层60；而在不设置转接区202的位置处，则可对公共线镂空成网格状以便对密封胶照光固化，这种方案，在对盒后，金球70和密封胶涂布时，金球70若被挤压突出转接区202，就会造成上下基板导通不好，或盒厚异常，造成显示异常。而本方案中，透明电极层60覆盖第二金属转接区90，并且透明电极层60通过第二金属转接区90与公共线连通，而在透明电极层60的第一表面设置金球70，使得所述金球70连通所述阵列基板的透明电极层60和彩膜基板的公共电极，最后实现阵列基板的公共线和彩膜基板的公共电极相互导通。这样由于第二金属转接区90加宽了转接区202的整体宽度，可以使得涂布的密封胶避免溢出转接区202，提高显示质量。
其中，衬底10可以为玻璃基板。
在一实施例中，在所述第二金属层40的第一表面形成透明电极层60，使得所述透 明电极层60覆盖所述第二金属转接区90，所述透明电极层60通过所述第二金属转接区90与所述公共线连通的步骤包括：
形成的透明电极层60覆盖在所述第一金属层20对应所述转接区202的第一表面的表面，以及栅极绝缘层30、第二金属层40对应第二金属凹陷区401的侧壁和第二金属转接区90处。
本方案中，形成的透明电极层60覆盖在第一金属层20对应转接区202的第一表面的表面，透明电极层60直接和第一金属层20接触，导电性更好。
作为本申请的一实施例，参考图4所示，公开了一种显示面板2的制程，包括步骤：
S41：在衬底10上覆盖一层金属材料层，形成位于非显示区200的第一金属层20和位于显示区100的公共线，把第一金属层20对应转接区202的部位部分蚀刻掉形成第一金属凹陷区201；
S42：在第一金属层20的第一表面形成栅极绝缘层30，并把所述栅极绝缘层30对应转接区202的部位蚀刻掉形成栅极绝缘凹陷区301；
S43：在所述栅极绝缘层30的第一表面形成第二金属层40，并把所述第二金属层40对应所述栅极绝缘凹陷区301的部位蚀刻掉形成第二金属凹陷区401；
S44：在所述第二金属层40的第一表面形成钝化层50，并把所述钝化层50对应转接区202的部位蚀刻掉形成钝化凹陷区501，所述钝化凹陷区501的宽度宽于第二金属凹陷区401的宽度，第二金属层40露出的表面为第二金属转接区90；
S45：在所述第二金属层40的第一表面形成透明电极层60，形成的所述透明电极层60覆盖在第一金属凹陷区201，以及栅极绝缘层30、第二金属层40对应第二金属凹陷区401的侧壁和第二金属转接区90处；
S46：所述透明电极层60通过所述第二金属转接区90与所述公共线连通，以形成第一基板；
S47：形成设有公共电极的第二基板80；
S48：在所述透明电极层60的第一表面设置金球70，并使所述金球70连通所述第一基板的透明电极层60和所述第二基板80的公共电极。
本方案中，把第一金属层20对应转接区202的部位部分蚀刻形成第一金属凹陷区201，形成的透明电极层60覆盖在第一金属凹陷区201，同时覆盖在栅极绝缘层30、第二金属层40对应第二金属凹陷区401的侧壁以及第二金属转接区90处，使得转接区 202的深度加深，可以使得涂布的密封胶避免溢出转接区202，提高显示质量。
在一实施例中，所述第一金属层20和所述第一基板的公共线通过同一道制程形成，且相互电连接。
本方案中，第一基板为阵列基板，第一金属层20和阵列基板的公共线通过同一道制程形成，不需要通过打孔将电极进行连接，减少了制程。
在一实施例中，所述第二金属层40和所述第一基板的公共线通过同一道制程形成，且相互电连接。
本方案中，第一基板为阵列基板，第二金属层40和阵列基板的公共线通过同一道制程形成，不需要通过打孔将电极进行连接，减少了制程。
在一实施例中，所述第一基板的公共线与所述第一金属层20或第二金属层40通过同一道光罩制成，所述第一金属层20和第二金属层40通过过孔电连接。
本方案中，第一基板为阵列基板，第一金属层20和第二金属层40通过过孔电连接，减少了断线带来的断路的可能；阵列基板的第一公共电极与第一金属层20同层且电连接时，第二金属层40和显示区100的第二金属层40绝缘；阵列基板的第一公共电极与第二金属层40同层且电连接时，第一金属层20和显示区100的第一金属层20绝缘，防止串扰。
作为本申请的另一实施例，参考图5和图6所示，公开了一种显示面板2，包括：
第一基板；
第二基板80，和所述第一基板对置；
所述第一基板包括公共线，所述第二基板80包括公共电极；
金球70，设置在所述显示面板2的非显示区200，导通所述第一基板的公共线和第二基板80的公共电极，所述金球70设置的位置为转接区202；
所述第一基板包括：
衬底10；
第一金属层20，设置在所述衬底上；
栅极绝缘层30，设置在所述第一金属层20第一表面，对应转接区202镂空，形成栅极绝缘凹陷区301；
第二金属层40，设置在所述栅极绝缘层30第一表面，所述第二金属层40对应栅极绝缘凹陷区301的部位镂空，形成第二金属凹陷区401；
钝化层50，设置在所述第二金属层40第一表面，所述钝化层50对应栅极绝缘凹陷区301的部位镂空，形成钝化凹陷区501，所述钝化凹陷区501的宽度大于第二金属层40凹陷区的宽度，第二金属层40露出的表面为第二金属转接区90；
透明电极层60，覆盖第二金属转接区90，所述透明电极层60与所述第一基板的公共线连通；
所述金球70设置在所述透明电极层60对应所述第二金属凹陷区401的位置，连通所述第一基板的透明电极层60和所述第二基板80的公共电极。
在VA(Vertical Alignment)技术的LCD中，液晶由加载在第一基板和第二基板80之间形成的垂直电场使之转动，从而使液晶形成不同的偏转角度，从而使得上偏光片能透过不同强度的光。在电场加载过程中，为了使第一基板上的公共线和第二基板80的公共电极相互导通，第一基板的密封胶内要设置导电的转接区202，以便金球70接触上下基板；而不设置金球70的位置，则可不设置转接区202。在第一基板的转接区202，铺设与公共线连通的透明电极层60；而在不设置转接区202的位置处，则可对公共线镂空成网格状以便对密封胶照光固化，这种方案，在对盒后，金球70和密封胶涂布时，金球70若被挤压突出转接区202，就会造成上下基板导通不好，或盒厚异常，造成显示异常。而本方案中，透明电极层60覆盖第二金属转接区90，并且透明电极层60通过第二金属转接区90与公共线连通，而在透明电极层60的第一表面设置金球70，使得所述金球70连通所述第一基板的透明电极层60和第二基板80的公共电极，最后实现第一基板的公共线和第二基板80的公共电极相互导通。这样由于第二金属转接区90加宽了转接区202的整体宽度，可以使得涂布的密封胶避免溢出转接区202，提高显示质量。
在一实施例中，参考图5所示，所述透明电极层60覆盖所述第二金属转接区90，同时覆盖在所述第一金属层20表面、栅极绝缘层30以及第二金属层40对应第二金属凹陷区401一侧的侧壁。
本方案中，形成的透明电极层60覆盖在第一金属层20对应转接区202的第一表面的表面，透明电极层60直接和第一金属层20接触，导电性更好。
在一实施例中，参考图6所示，第一金属凹陷区201，位于所述第一金属层20对应所述转接区202的镂空处；所述透明电极层60覆盖第一金属凹陷区201，以及栅极绝缘层30、第二金属层40对应第二金属凹陷区401一侧的侧壁和第二金属转接区90 处。
本方案中，把第一金属层20对应转接区202的部位部分蚀刻形成第一金属凹陷区201，形成的透明电极层60覆盖在第一金属凹陷区201，同时覆盖在栅极绝缘层30、第二金属层40对应第二金属凹陷区401的侧壁以及第二金属转接区90处，使得转接区202的深度加深，可以使得涂布的密封胶避免溢出转接区202，提高显示质量。
其中，第一金属层20的厚度一般在1500-8000埃米
Figure PCTCN2018115208-appb-000001
或
Figure PCTCN2018115208-appb-000002
其中，靠近第一连接区201的第二金属转接区90的宽度为X1，一般X1的范围为5μm≤X1≤500μm或10μm≤X1≤500μm；靠近第二连接区203的第二金属转接区90的宽度为X2，一般X2的范围为5μm≤X2≤500μm或10μm≤X1≤500μm。
作为本申请的一实施例，参考图7所示，公开了一种显示面板2包括：
阵列基板；
彩膜基板，所述阵列基板和所述彩膜基板相对设置；
所述阵列基板包括公共线，所述彩膜基板包括公共电极；
金球70，设置在所述显示面板2的非显示区200，导通所述阵列基板的公共线和彩膜基板的公共电极，所述金球70设置的位置为转接区202；
所述阵列基板包括：
衬底10；
第一金属层20，设置在所述衬底上，所述第一金属层20对应所述转接区202镂空，形成第一金属凹陷区201；
栅极绝缘层30，设置在所述第一金属层20第一表面，对应第一金属凹陷区201镂空，形成栅极绝缘凹陷区301，所述栅极绝缘凹陷区301的宽度大于所述第一金属凹陷区201的宽度，所述第一金属层露出的表面为第一金属转接区91；
第二金属层40，设置在所述栅极绝缘层30第一表面，所述第二金属层40对应栅极绝缘凹陷区301的部位镂空，形成第二金属凹陷区401；
钝化层50，设置在所述第二金属层40第一表面，所述钝化层50对应所述第二金属凹陷区401的部位镂空，形成钝化凹陷区501；
透明电极层60，覆盖第一金属凹陷区201和第一金属转接区91，所述透明电极层60与所述阵列基板的公共线连通；
所述金球70设置在所述透明电极层60对应所述第一金属凹陷区201的位置，连通 所述第一基板的透明电极层60和所述第二基板80的公共电极。
本方案中，在制作阵列基板时，在基板上覆盖一层金属材料层，将金属材料层对应转接区202的位置部分蚀刻掉，形成第一金属凹陷区201，在第一金属凹陷区201第一表面形成透明电极层60，并将透明电极层60与公共线电连接，再在透明电极层60的第一表面设置金球70，金球70连通阵列基板的公共线和彩膜基板的公共电极，第一金属凹陷区201增加了转接区202的深度，可以使得涂布的金球70和密封胶避免溢出转接区202，提高显示质量。
作为本申请的另一实施例，参考图8所示，公开了一种显示装置1，包括上述的显示面板2。
本申请的面板可以是TN面板(全称为Twisted Nematic，即扭曲向列型面板)、IPS面板(In-PlaneSwitching，平面转换)、VA面板(Multi-domain Vertical Alignment，多象限垂直配向技术)，当然，也可以是其他类型的面板，适用即可。
以上内容是结合具体的可选实施方式对本申请所作的进一步详细说明，不能认定本申请的具体实施只局限于这些说明。对于本申请所属技术领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干简单推演或替换，都应当视为属于本申请的保护范围。

Claims (19)

  1. 一种显示面板的制程，包括步骤：
    在衬底上覆盖一层金属材料层，形成位于非显示区的第一金属层和位于显示区的公共线；
    在第一金属层的第一表面形成栅极绝缘层，并把所述栅极绝缘层对应转接区的部位蚀刻掉形成栅极绝缘凹陷区；
    在所述栅极绝缘层的第一表面形成第二金属层，并把所述第二金属层对应所述栅极绝缘凹陷区的部位蚀刻掉形成第二金属凹陷区；
    在所述第二金属层的第一表面形成钝化层，并把所述钝化层对应转接区的部位蚀刻掉形成钝化凹陷区，所述钝化凹陷区的宽度宽于第二金属凹陷区的宽度，第二金属层露出的表面为第二金属转接区；
    在所述第二金属层的第一表面形成透明电极层，使得所述透明电极层覆盖所述第二金属转接区，所述透明电极层通过所述第二金属转接区与所述公共线连通，以形成第一基板；
    形成设有公共电极的第二基板；
    在所述透明电极层的第一表面设置金球，并使所述金球连通所述第一基板的透明电极层和所述第二基板的公共电极。
  2. 如权利要求1所述的一种显示面板的制程，其中，在所述第二金属层的第一表面形成透明电极层，使得所述透明电极层覆盖所述第二金属转接区，所述透明电极层通过所述第二金属转接区与所述公共线连通的步骤包括：
    形成的透明电极层覆盖在所述第一金属层对应所述转接区的第一表面的表面，以及栅极绝缘层、第二金属层对应第二金属凹陷区的侧壁和第二金属转接区处。
  3. 如权利要求1所述的一种显示面板的制程，其中，在所述第二金属层的第一表面形成透明电极层，使得所述透明电极层覆盖所述第二金属转接区，所述透明电极层通过所述第二金属转接区与所述公共线连通的步骤包括：
    把第一金属层对应转接区的部位部分蚀刻掉形成第一金属凹陷区；
    形成的透明电极层覆盖在第一金属凹陷区，以及栅极绝缘层、第二金属层对应第二 金属凹陷区的侧壁和第二金属转接区处。
  4. 如权利要求1所述的一种显示面板的制程，其中，所述第一金属层和所述第一基板的公共线通过同一道制程形成，且相互电连接。
  5. 如权利要求1所述的一种显示面板的制程，其中，所述第二金属层和所述第一基板的公共线通过同一道制程形成，且相互电连接。
  6. 如权利要求1所述的一种显示面板的制程，其中，所述第一基板的公共线与所述第一金属层或第二金属层通过同一道光罩制成，所述第一金属层和第二金属层通过过孔电连接。
  7. 一种显示面板，包括：
    第一基板；
    第二基板，和所述第一基板对置；
    所述第一基板包括公共线，所述第二基板包括公共电极；以及
    金球，设置在所述显示面板的非显示区，导通所述第一基板的公共线和第二基板的公共电极，所述金球设置的位置为转接区；
    所述第一基板包括：
    衬底；
    第一金属层，设置在所述基板上；
    栅极绝缘层，设置在所述第一金属层第一表面，对应转接区镂空，形成栅极绝缘凹陷区；
    第二金属层，设置在所述栅极绝缘层第一表面，所述第二金属层对应栅极绝缘凹陷区的部位镂空，形成第二金属凹陷区；
    钝化层，设置在所述第二金属层第一表面，所述钝化层对应栅极绝缘凹陷区的部位镂空，形成钝化凹陷区，所述钝化凹陷区的宽度大于第二金属层凹陷区的宽度，第二金属层露出的表面为第二金属转接区；以及
    透明电极层，覆盖第二金属转接区，所述透明电极层与所述第一基板的公共线连通；
    所述金球设置在所述透明电极层对应所述第二金属凹陷区的位置，连通所述第一基板的透明电极层和所述第二基板的公共电极。
  8. 如权利要求7所述的一种显示面板，其中，所述透明电极层覆盖所述第二金属转接区，同时覆盖在所述第一金属层表面、栅极绝缘层以及第二金属层对应第二金属凹 陷区一侧的侧壁。
  9. 如权利要求7所述的一种显示面板，其中，
    第一金属凹陷区，位于所述第一金属层对应所述转接区的镂空处；所述透明电极层覆盖第一金属凹陷区，以及栅极绝缘层、第二金属层对应第二金属凹陷区一侧的侧壁和第二金属转接区处。
  10. 如权利要求7所述的一种显示面板，其中，所述第一金属层和所述第一基板的公共线通过同一道制程形成，且相互电连接。
  11. 如权利要求7所述的一种显示面板，其中，所述第二金属层和所述第一基板的公共线通过同一道制程形成，且相互电连接。
  12. 如权利要求7所述的一种显示面板，其中，所述第一基板的公共线与所述第一金属层或第二金属层通过同一道光罩制成，所述第一金属层和第二金属层通过过孔电连接。
  13. 如权利要求7所述的一种显示面板，其中，所述第一基板为阵列基板，所述第二基板为彩膜基板。
  14. 一种显示装置，所述显示装置包括显示面板，
    所述显示面板包括第一基板；
    第二基板，和所述第一基板对置；
    所述第一基板包括公共线，所述第二基板包括公共电极；
    金球，设置在所述显示面板的非显示区，导通所述第一基板的公共线和第二基板的公共电极，所述金球设置的位置为转接区；
    所述第一基板包括：
    衬底；
    第一金属层，设置在所述衬底上；
    栅极绝缘层，设置在所述第一金属层第一表面，对应转接区镂空，形成栅极绝缘凹陷区；
    第二金属层，设置在所述栅极绝缘层第一表面，所述第二金属层对应栅极绝缘凹陷区的部位镂空，形成第二金属凹陷区；
    钝化层，设置在所述第二金属层第一表面，所述钝化层对应栅极绝缘凹陷区的部位镂空，形成钝化凹陷区，所述钝化凹陷区的宽度大于第二金属层凹陷区的宽度，第二金 属层露出的表面为第二金属转接区；以及
    透明电极层，覆盖第二金属转接区，所述透明电极层与所述第一基板的公共线连通；
    所述金球设置在所述透明电极层对应所述第二金属凹陷区的位置，连通所述第一基板的透明电极层和所述第二基板的公共电极。
  15. 如权利要求14所述的一种显示装置，其中，所述透明电极层覆盖所述第二金属转接区，同时覆盖在所述第一金属层表面、栅极绝缘层以及第二金属层对应第二金属凹陷区一侧的侧壁。
  16. 如权利要求14所述的一种显示装置，其中，第一金属凹陷区，位于所述第一金属层对应所述转接区的镂空处；所述透明电极层覆盖第一金属凹陷区，以及栅极绝缘层、第二金属层对应第二金属凹陷区一侧的侧壁和第二金属转接区处。
  17. 如权利要求14所述的一种显示装置，其中，所述第一金属层和所述第一基板的公共线通过同一道制程形成，且相互电连接。
  18. 如权利要求14所述的一种显示装置，其中，所述第二金属层和所述第一基板的公共线通过同一道制程形成，且相互电连接。
  19. 如权利要求14所述的一种显示装置，其中，所述第一基板的公共线与所述第一金属层或第二金属层通过同一道光罩制成，所述第一金属层和第二金属层通过过孔电连接。
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