WO2020073446A1 - 显示面板和显示装置 - Google Patents

显示面板和显示装置 Download PDF

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Publication number
WO2020073446A1
WO2020073446A1 PCT/CN2018/117657 CN2018117657W WO2020073446A1 WO 2020073446 A1 WO2020073446 A1 WO 2020073446A1 CN 2018117657 W CN2018117657 W CN 2018117657W WO 2020073446 A1 WO2020073446 A1 WO 2020073446A1
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WO
WIPO (PCT)
Prior art keywords
metal
substrate
layer
gate insulating
metal layer
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Application number
PCT/CN2018/117657
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English (en)
French (fr)
Inventor
吴川
Original Assignee
惠科股份有限公司
重庆惠科金渝光电科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 惠科股份有限公司, 重庆惠科金渝光电科技有限公司 filed Critical 惠科股份有限公司
Priority to US16/340,142 priority Critical patent/US11150528B1/en
Publication of WO2020073446A1 publication Critical patent/WO2020073446A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate

Definitions

  • the present application relates to the field of display technology, in particular to a display panel and a display device.
  • the liquid crystal display has many advantages such as thin body, power saving, no radiation, etc., and has been widely used.
  • Most of the liquid crystal displays known by the applicant are backlight type liquid crystal displays, which include a liquid crystal panel and a backlight module (Backlight Module).
  • the working principle of the liquid crystal panel is to place liquid crystal molecules in two parallel substrates, and apply a driving voltage to the two glass substrates to control the rotation direction of the liquid crystal molecules, so as to refract the light of the backlight module to generate a picture.
  • the liquid crystal is rotated by a vertical electric field formed between the CF (Color Filter) and the array substrate (array), so that The liquid crystal forms different deflection angles, so that the upper polarizer can transmit light of different intensities.
  • the electric field on the color filter substrate is transferred from the array substrate to the color filter substrate by the transfer area (Transfer Pad).
  • the transfer area usually a circle of Vcom (common voltage) traces of the first metal layer and the second metal layer is arranged around the panel, and the Transfer Pad is designed at a suitable position.
  • the location of the Transfer Pad is a transparent electrode layer on the first metal layer or the first metal layer and the second metal layer to form the Transfer Pad.
  • the Vcom signal transmitted by the first metal layer passes through the Transfer Pad area
  • the first metal layer is finally transferred to the transparent electrode layer of the color filter substrate through the gold ball, and then transferred from the array substrate to the color filter substrate.
  • the transfer area is made in the sealant area outside the AA (Active Area) of the array substrate side, and then the Auball is spread at the stage of the liquid crystal cell process to form pixels
  • AA Active Area
  • the sealant and gold ball are applied, it will cause abnormal display.
  • the present application provides a display panel and a display device to improve display quality.
  • the present application provides a display panel, including: a first substrate, a second substrate opposite to the first substrate, and a gold ball; the first substrate includes a common line, and the second substrate includes a common electrode; The gold ball is disposed in a non-display area of the display panel, conducting the common line of the first substrate and the common electrode of the second substrate, and the gold ball is disposed at a transition area; the first substrate includes : Substrate, first metal layer, gate insulating layer, second metal layer, passivation layer and transparent electrode layer, the first metal layer is provided on the substrate, the first metal layer corresponds to the The transition area is hollowed out to form a first metal recessed area; the gate insulating layer is disposed on the first metal layer, and corresponding to the first metal recessed area is hollowed out to form a gate insulating recessed area; the second metal layer Disposed on the gate insulating layer, the second metal layer is hollowed out corresponding to the gate insulating recessed area to form a second metal recessed
  • the width of the gate insulating recessed region is greater than the width of the first metal recessed region; the exposed surface of the first metal layer is the first metal transition region, and the first metal transition region is covered with The transparent electrode layer.
  • the width of the first metal transfer region is greater than or equal to 5 microns and less than or equal to 500 microns.
  • the common line of the first metal layer and the first substrate is formed by the same layer, and the common line of the first metal layer and the first substrate is electrically connected to each other.
  • the width of the gate insulating recessed region is equal to the width of the second metal recessed region, and the width of the gate insulating recessed region is equal to the width of the passivation recessed region.
  • the common line is provided in the first metal layer, and the transparent electrode layer is in communication with the first metal layer.
  • the common line is provided in a second metal layer, and the transparent electrode layer and the second metal layer are in communication.
  • the width of the passivation recessed region is greater than the width of the recessed region of the second metal layer, the exposed surface of the second metal layer is the second metal transition region, and the transparent electrode layer covers the gate insulating layer and the second The metal layer corresponds to the side wall of the second metal recessed area and the second metal transition area.
  • the common line of the second metal layer and the first substrate is formed by the same layer, and the common line of the second metal layer and the first substrate is electrically connected to each other.
  • the width of the second metal recessed area is greater than the width of the gate insulating recessed area, and the width of the gate insulating recessed area is greater than the width of the first metal recessed area.
  • the first substrate is an array substrate
  • the second substrate is a color filter substrate
  • the substrate is a glass substrate.
  • the application also discloses a manufacturing process of a display panel, including the steps of:
  • a gold ball is provided on the transparent electrode layer, and the gold ball is connected to the transparent electrode layer of the first substrate and the common electrode of the second substrate.
  • the gate insulating recess In the step of forming a gate insulating layer on the first metal layer and etching away the portion of the gate insulating layer corresponding to the transition region to form a gate insulating recessed region, the gate insulating recess The width of the region is greater than the width of the first metal recessed region.
  • the exposed surface of the first metal layer is the first metal transition region, and the formed transparent electrode layer covers the first metal transition region.
  • the common line of the first metal layer and the first substrate is formed by the same layer, and the common line of the first metal layer and the first substrate is electrically connected to each other.
  • the present application also discloses a display device including the above-mentioned display panel.
  • the display device is one of a twisted nematic display device, a plane switching display device, and a multi-quadrant vertical alignment display device.
  • the liquid crystal is rotated by the vertical electric field applied between the first substrate and the second substrate, so that the liquid crystal forms different deflection angles, so that the upper polarizer can transmit light of different intensities.
  • a conductive transition area should be provided in the sealant of the first substrate so that the gold ball contacts the upper and lower substrates; Set the location of the golden ball, you can not set the transfer area.
  • the common line can be hollowed out in a grid to cure the sealant by light,
  • the gold ball and the sealant are applied after the box, if the gold ball is squeezed to protrude from the transfer area, it will cause poor conduction between the upper and lower substrates, or the box thickness is abnormal, resulting in abnormal display.
  • a metal material layer is covered on the substrate, and the position of the metal material layer corresponding to the transition area is etched away to form a first metal recessed area above the first metal recessed area
  • a transparent electrode layer is formed, and the transparent electrode layer is electrically connected to the common line, and then a gold ball is provided above the transparent electrode layer, the gold ball connects the common line of the first substrate and the common electrode of the second substrate, and the first metal recessed area increases
  • the depth of the transfer area can prevent the coated gold balls and sealant from overflowing the transfer area and improve the display quality.
  • FIG. 1 is a schematic diagram of a basic structure of a display panel according to an embodiment of the present application.
  • Fig. 2 is an enlarged schematic view of the area A-A 'in Fig. 1;
  • FIG. 3 is a schematic diagram of a cross-sectional view of the area A-A 'in FIG. 1;
  • FIG. 4 is a schematic diagram of a structure of a display panel according to an embodiment of the application.
  • FIG. 5 is a schematic diagram of another display panel structure according to an embodiment of the present application.
  • FIG. 6 is a schematic flowchart of another display panel according to an embodiment of the present application.
  • FIG. 7 is a schematic structural diagram of a display device according to an embodiment of the application.
  • the features defined as “first” and “second” may explicitly or implicitly include one or more of the features.
  • the meaning of “plurality” is two or more.
  • the term “including” and any variations thereof are intended to cover non-exclusive inclusions.
  • connection should be understood in a broad sense, for example, it can be fixed or detachable Connected, or connected integrally; either mechanically or electrically; directly connected, or indirectly connected through an intermediary, or internally connected between two components.
  • installation should be understood in a broad sense, for example, it can be fixed or detachable Connected, or connected integrally; either mechanically or electrically; directly connected, or indirectly connected through an intermediary, or internally connected between two components.
  • a display panel including:
  • the first substrate 3 includes a substrate 10, a first metal layer 20, a gate insulating layer 30, a second metal layer 40, a passivation layer 50, and a transparent electrode layer 60.
  • the first metal layer 20 is provided in On the substrate 10, the first metal layer 20 is hollowed out corresponding to the transition region 202 to form a first metal recessed region 21; the gate insulating layer 30 is disposed on the first metal layer 20, corresponding to The first metal recessed area 21 is hollowed out to form a gate insulating recessed area 31; the second metal layer 40 is disposed on the gate insulating layer 30, and the second metal layer 40 corresponds to a portion of the gate insulating recessed area 31 Hollow out to form a second metal recessed area 41; the passivation layer 50 is disposed on the second metal layer 40, and the passivation layer 50 is hollowed out corresponding to the second metal recessed area 41 to form a passivated recess Area 51; the transparent electrode layer 60 covers the first metal recessed area 21, the transparent electrode layer 60 communicate
  • the liquid crystal is rotated by the vertical electric field applied between the first substrate 3 and the second substrate 80, so that the liquid crystal forms a different deflection angle, so that the upper polarizer can transmit light of different intensities.
  • a conductive transition area 202 is provided in the sealant of the first substrate 3 so that the gold ball 70 contacts The upper and lower substrates; without the position of the golden ball 70, the transfer area 202 may not be provided.
  • a conductive layer first metal layer 20 connected to the common line is laid; and where the transfer area 202 is not provided, the common line can be hollowed out to form a grid for sealing
  • the glue is cured by light irradiation.
  • the first substrate 3 when manufacturing the first substrate 3, a metal material layer is covered on the substrate, and the position of the metal material layer corresponding to the transition region 202 is partially etched away to form a first metal recessed region 21, which is formed on the first metal
  • a transparent electrode layer 60 is formed above the recessed area 21, and the transparent electrode layer 60 is electrically connected to the common line, and then a gold ball 70 is provided above the transparent electrode layer 60, and the gold ball 70 connects the common line of the first substrate 3 and the second substrate
  • the common electrode of 80, the first metal recessed area 21 increases the depth of the transition area 202, so that the coated gold ball 70 and the sealant can avoid overflowing the transition area 202, and improve the display quality.
  • the first substrate 3 is an array substrate
  • the second substrate 80 is a color filter substrate.
  • the width of the gate insulating recessed area 31 is greater than the width of the first metal recessed area 21; the exposed surface of the first metal layer 20 is the first metal transition area 90 The first metal transition region 90 is covered with the transparent electrode layer 60.
  • the width of the gate insulating recessed region 31 is greater than the width of the first metal recessed region 21, and both the first metal recessed region 21 and the first metal transition region 90 are covered with the transparent electrode layer 60, and the transparent electrode layer 60 and The first metal layer 20 has sufficient contact area, so that the transparent electrode layer 60 and the common line have better connectivity, better conductivity, and more stability.
  • the common line of the first metal layer 20 and the first substrate 3 is formed by the same layer, and the common line of the first metal layer 20 and the first substrate 3 is electrically connected to each other.
  • the first substrate 3 is an array substrate, and the common line of the first metal layer 20 and the array substrate is formed by the same layer, and there is no need to connect the electrodes by drilling, which reduces the manufacturing process.
  • the width of the gate insulating depression 31 is equal to the width of the second metal depression 41, and the width of the gate insulating depression 31 is equal to the width of the passivation depression 51 .
  • the width of the gate insulating recessed area 31, the width of the second metal recessed area 41, and the width of the passivated recessed area 51 are equal, and the gold ball 70 is disposed at the position of the first metal recessed area 21, due to the The widths are all equal and greater than the width of the first metal recessed area 21, and there is a step difference between them. Even if the gold ball 70 is offset due to the squeezing force, the gold ball 70 will not be offset elsewhere, ensuring the gold The conduction effect of the ball 70.
  • the common line is disposed on the first metal layer 20, and the transparent electrode layer 60 and the first metal layer 20 are in communication.
  • the common line is provided on the first metal layer 20, and the transparent conductive layer covers the first metal transition region 90, and the conduction effect between the transparent conductive layer and the common line is good.
  • the common line is provided in the second metal layer, and the transparent electrode layer and the second metal layer are in communication.
  • the width of the passivation recessed area 51 is greater than the width of the recessed area of the second metal layer 40.
  • the exposed surface of the second metal layer 40 is the second metal transition area 91.
  • the transparent electrode layer 60 covers the sidewalls of the gate insulating layer 30 and the second metal layer 40 corresponding to the second metal recessed area 41 and the second metal transition area 91.
  • the transparent electrode layer 60 covers the side wall of the gate insulating layer 30 and the second metal layer 40 corresponding to the second metal recessed area 41 and the second metal transition area 91, and the transparent electrode layer 60 passes through the second
  • the metal transfer area 91 communicates with the common line
  • a gold ball 70 is provided on the transparent electrode layer 60 so that the gold ball 70 communicates with the transparent electrode layer 60 of the first substrate 3 and the common electrode of the second substrate 80
  • the common line of the first substrate 3 and the common electrode of the second substrate 80 are connected to each other. In this way, since the second metal transfer area 91 widens the overall width of the transfer area 202, the applied sealant can avoid overflowing the transfer area 202 and improve the display quality.
  • the common line of the second metal layer 40 and the first substrate 3 is formed by the same layer, and the common line of the second metal layer 40 and the first substrate 3 is electrically connected to each other.
  • the first substrate 3 is an array substrate, and the common line of the second metal layer 40 and the array substrate is formed by the same process, which reduces the use of photomasks and processes, thereby improving production efficiency.
  • the width of the second metal recessed area 41 is greater than the width of the gate insulating recessed area 31, and the width of the gate insulating recessed area 31 is greater than the width of the first metal recessed area 21.
  • the width of the second metal recessed region 41 is greater than the width of the gate insulating recessed region 31, and the width of the gate insulating recessed region 31 is greater than the width of the first metal recessed region 21.
  • a metal recessed area 21 starts to rise in steps, relatively speaking, it increases the accommodating space of the sealant and improves the display quality.
  • a display panel 2 includes:
  • An array substrate, a color film substrate, and a gold ball, the array substrate and the color film substrate are oppositely arranged; the array substrate includes a common line, the color film substrate includes a common electrode; and the gold ball 70 is disposed on the display
  • the non-display area 200 of the panel 2 is connected to the common line of the array substrate and the common electrode of the color filter substrate, and the gold ball 70 is located at the transition area 202;
  • the array substrate includes: a substrate 10, a first metal layer 20, a gate insulating layer 30, a second metal layer 40, a passivation layer 50, and a transparent electrode layer 60, the first metal layer 20 is disposed on the substrate
  • the first metal layer 20 is hollowed out corresponding to the transition area 202 to form a first metal recessed area 21
  • the gate insulating layer 30 is disposed on the first metal layer 20 and corresponds to the first metal recessed area 21 is hollowed out to form a gate insulating recessed area 31, the width of the gate insulating recessed area 31 is greater than the width of the first metal recessed area 21, and the exposed surface of the first metal layer is the first metal transition area
  • the second metal layer 40 is disposed on the gate insulating layer 30, and the second metal layer 40 is hollowed out corresponding to the gate insulating recessed area 31 to form a second metal recessed area 41;
  • the passivation layer 50 Provided on the second metal layer 40, the passivation layer 50 is hollowed out
  • the liquid crystal is rotated by the vertical electric field applied between the first substrate 3 and the second substrate 80, so that the liquid crystal forms a different deflection angle, so that the upper polarizer can transmit light of different intensities.
  • a conductive transition area 202 is provided in the sealant of the first substrate 3 so that the gold ball 70 contacts The upper and lower substrates; without the position of the golden ball 70, the transfer area 202 may not be provided.
  • a conductive layer first metal layer 20 connected to the common line is laid; and where the transfer area 202 is not provided, the common line can be hollowed out to form a grid for sealing
  • the glue is cured by light irradiation.
  • a metal material layer is covered on the substrate, and the metal material layer is partially etched away at the position corresponding to the transition region 202 to form the first metal recessed region 21, and the first metal A transparent electrode layer 60 is formed on the recessed area 21, and the transparent electrode layer 60 is electrically connected to the common line, and then a gold ball 70 is provided on the transparent electrode layer 60, and the gold ball 70 communicates the common line of the first substrate 3 and the second substrate
  • the common electrode of 80, the first metal recessed area 21 increases the depth of the transition area 202, so that the coated gold ball 70 and the sealant can avoid overflowing the transition area 202, and improve the display quality.
  • the thickness of the first metal layer 20 is generally The thickness of the second metal layer 40 is generally between The thickness of the transparent electrode layer 60 is generally Wherein, the width of the first metal transition region 90 near the first connection region 201 is X1, generally the range of X1 is 5 ⁇ m ⁇ X1 ⁇ 500 ⁇ m; the width of the first metal transition region 90 near the second connection region 203 is X2 In general, the range of X2 is 5 ⁇ m ⁇ X2 ⁇ 500 ⁇ m.
  • the present application also discloses a manufacturing process of the display panel 2, including the steps of:
  • S61 Covering a layer of metal material on the substrate, etching away the middle of the metal material layer corresponding to the position of the transition area, forming the first metal layer and the first metal recessed area in the non-display area and the common line in the display area ;
  • S62 forming a gate insulating layer on the first metal layer, and etching away the portion of the gate insulating layer corresponding to the transition area to form a gate insulating recessed area, the width of the gate insulating recessed area is greater than that The width of the first metal recessed area, the exposed surface of the first metal layer is the first metal transition area;
  • a transparent electrode layer is formed on the first metal recessed area, the formed transparent electrode layer covers the first metal recessed area and the first metal transition area, and the transparent electrode layer communicates with the common line Forming a first substrate;
  • S67 Set a gold ball on the transparent electrode layer, and connect the gold ball to the transparent electrode layer of the first substrate and the second common electrode.
  • the gate in the step of forming a gate insulating layer on the first metal layer and etching away the portion of the gate insulating layer corresponding to the transition region to form a gate insulating recessed region, the gate The width of the insulating recessed area is greater than the width of the first metal recessed area.
  • the exposed surface of the first metal layer is the first metal transit area, and the formed transparent electrode layer covers the first metal transit area.
  • the width of the gate insulating recessed region is greater than the width of the first metal recessed region, and the first metal recessed region and the first metal transition region are covered with a transparent electrode layer, and the transparent electrode layer and the first metal layer have sufficient
  • the contact area makes the transparent electrode layer and the common line have better connectivity, better conductivity and more stability.
  • the common line of the first metal layer and the first substrate is formed by the same layer, and the common line of the first metal layer and the first substrate is electrically connected to each other.
  • the common line is provided in the first metal layer, and the transparent conductive layer covers the first metal transition area, and the conduction effect of the transparent conductive layer and the common line is good.
  • the present application also discloses a display device 1 including the above-mentioned display panel 2.
  • the panel of this application may be a TN panel (full name Twisted Nematic), an IPS panel (In-Plane Switching), a VA panel (Multi-domain Vertical Alignment, multi-quadrant vertical alignment technology), , Can also be other types of panels, just apply.
  • TN panel full name Twisted Nematic
  • IPS panel In-Plane Switching
  • VA panel Multi-domain Vertical Alignment, multi-quadrant vertical alignment technology

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  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
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Abstract

一种显示面板(2)和显示装置(1)。显示面板(2)包括：第一基板(3)、第二基板(80)和金球(70)，金球(70)导通第一基板(3)和第二基板(80)，金球(70)设置的位置为转接区(202)；第一基板(3)包括：衬底(10)、第一金属层(20)和透明电极层(60)，第一金属层(20)对应的转接区(202)镂空，形成第一金属凹陷区(21)；透明电极层(60)与第一基板(3)的公共线连通；金球(70)设置在第一金属凹陷区(21)的位置，连通第一基板(3)的透明电极层(60)和第二基板(80)的公共电极。

Description

显示面板和显示装置
本申请要求于2018年10月10日提交中国专利局，申请号为CN201821647908.1，申请名称为“一种显示面板和显示装置”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及显示技术领域，尤其涉及一种显示面板和显示装置。
背景技术
这里的陈述仅提供与本申请有关的背景信息，而不必然地构成现有技术。
液晶显示器具有机身薄、省电、无辐射等众多优点，得到了广泛的应用。申请人知晓的的液晶显示器大部分为背光型液晶显示器，其包括液晶面板及背光模组(Backlight Module)。液晶面板的工作原理是在两片平行的基板当中放置液晶分子，并在两片玻璃基板上施加驱动电压来控制液晶分子的旋转方向，以将背光模组的光线折射出来产生画面。
在VA(Vertical Alignment)技术的LCD(Liquid Crystal Display，液晶显示器)中，液晶由加载在CF(Color Filter，彩膜基板)和阵列基板(array)之间形成的垂直电场使之转动，从而使液晶形成不同的偏转角度，从而使得上偏光片能透过不同强度的光。在电场加载过程中，彩膜基板上的电场由转接区(Transfer Pad)将信号从阵列基板导入至彩膜基板。通常在面板周边设置一圈第一金属层和第二金属层的网状Vcom(公共电压)走线，在合适的位置设计Transfer Pad。Transfer Pad位置在第一金属层或者第一金属层和第二金属层之上铺上透明电极层即形成Transfer Pad，面板实际工作过程中，由第一金属层传输的Vcom信号在Transfer Pad区域通过第一金属层经过金球最后传到彩膜基板的透明电极层，从阵列基板传输至彩膜基板。
其中，在阵列基板侧AA(Active Area，可视区)外的密封胶(sealant)区域内制作转接区(transfer pad)，然后在液晶盒制程阶段进行金球(Auball)撒布，以形成像素电极与共用电极之间的电气连接。但是，在密封胶和金球涂布的时候，会造成显示异常。
技术解决方案
本申请提供一种显示面板和显示装置，以提升显示质量。
本申请提供了一种显示面板，包括：第一基板、和所述第一基板对置的第二基板以及金球；所述第一基板包括公共线，所述第二基板包括公共电极；所述金球设置在所述显示面板 的非显示区，导通所述第一基板的公共线和第二基板的公共电极，所述金球设置的位置为转接区；所述第一基板包括：衬底、第一金属层、栅极绝缘层、第二金属层、钝化层以及透明电极层，所述第一金属层设置在所述衬底上，所述第一金属层对应所述转接区镂空，形成第一金属凹陷区；所述栅极绝缘层设置在所述第一金属层上，且对应第一金属凹陷区镂空，形成栅极绝缘凹陷区；所述第二金属层设置在所述栅极绝缘层上，所述第二金属层对应栅极绝缘凹陷区的部位镂空，形成第二金属凹陷区；所述钝化层设置在所述第二金属层上，所述钝化层对应所述第二金属凹陷区的部位镂空，形成钝化凹陷区；所述透明电极层，覆盖第一金属凹陷区，所述透明电极层与所述第一基板的公共线连通；所述金球设置在所述透明电极层对应所述第一金属凹陷区的位置，连通所述第一基板的透明电极层和所述第二基板的公共电极。
可选的，所述栅极绝缘凹陷区的宽度大于所述第一金属凹陷区的宽度；第一金属层露出的表面为第一金属转接区，所述第一金属转接区覆盖有所述透明电极层。
可选的，所述第一金属转接区的宽度大于或等于5微米，且小于或等于500微米。
可选的，所述第一金属层和所述第一基板的公共线通过同层形成，所述第一金属层和所述第一基板的公共线相互电连接。
可选的，所述栅极绝缘凹陷区的宽度等于第二金属凹陷区的宽度，所述栅极绝缘凹陷区的宽度等于钝化凹陷区的宽度。
可选的，所述公共线设置在第一金属层，所述透明电极层和所述第一金属层连通。
可选的，所述公共线设置在第二金属层，所述透明电极层和所述第二金属层连通。
可选的，所述钝化凹陷区的宽度大于第二金属层凹陷区的宽度，第二金属层露出的表面为第二金属转接区，所述透明电极层覆盖栅极绝缘层、第二金属层对应第二金属凹陷区一侧的侧壁和第二金属转接区处。
可选的，所述第二金属层和所述第一基板的公共线通过同层形成，所述第二金属层和所述第一基板的公共线相互电连接。
可选的，所述第二金属凹陷区的宽度大于所述栅极绝缘凹陷区的宽度，所述栅极绝缘凹陷区的宽度大于所述第一金属凹陷区的宽度。
可选的，所述第一基板为阵列基板，所述第二基板为彩膜基板。
可选的，所述衬底为玻璃基板。
本申请还公开了一种显示面板的制程，包括步骤：
在衬底上覆盖一层金属材料层，将金属材料层对应转接区位置的中部蚀刻掉，形成位于非显示区的第一金属层和第一金属凹陷区以及位于显示区的公共线；
在所述第一金属层上形成栅极绝缘层，并把所述栅极绝缘层对应转接区的部位蚀刻掉形 成栅极绝缘凹陷区；
在所述栅极绝缘层上形成第二金属层，并把所述第二金属层对应所述栅极绝缘凹陷区的部位蚀刻掉；
在所述第二金属层上形成钝化层，并把所述钝化层对应所述栅极绝缘凹陷区的部位蚀刻掉；
在所述第一金属凹陷区上形成透明电极层，所述透明电极层与所述公共线连通形成第一基板；
形成设有公共电极的第二基板；
在所述透明电极层上设置金球，并使所述金球连通所述第一基板的透明电极层和第二基板的公共电极。
可选的，在所述第一金属层上形成栅极绝缘层，并把所述栅极绝缘层对应转接区的部位蚀刻掉形成栅极绝缘凹陷区的步骤中，所述栅极绝缘凹陷区的宽度大于所述第一金属凹陷区的宽度，第一金属层露出的表面为第一金属转接区，形成的透明电极层覆盖所述第一金属转接区。
可选的，所述第一金属层和所述第一基板的公共线通过同层形成，所述第一金属层和所述第一基板的公共线相互电连接。
本申请还公开了一种显示装置，包括上述的显示面板。
可选的，所述显示装置为扭曲向列型显示装置、平面转换显示装置和多象限垂直配向显示装置中的一种。
液晶由加载在第一基板和第二基板之间形成的垂直电场使之转动，从而使液晶形成不同的偏转角度，从而使得上偏光片能透过不同强度的光。在电场加载过程中，为了使第一基板上的公共线和第二基板的公共电极相互导通，第一基板的密封胶内要设置导电的转接区，以便金球接触上下基板；而不设置金球的位置，则可不设置转接区。在第一基板的转接区，铺设与公共线连通的导电层第一金属层；而在不设置转接区的位置处，则可对公共线镂空成网格状以便对密封胶照光固化，这种方案，在对盒后，金球和密封胶涂布时，金球若被挤压突出转接区，就会造成上下基板导通不好，或盒厚异常，造成显示异常。而本方案中，在制作第一基板时，在基板上覆盖一层金属材料层，将金属材料层对应转接区的位置部分蚀刻掉，形成第一金属凹陷区，在第一金属凹陷区上方形成透明电极层，并将透明电极层与公共线电连接，再在透明电极层的上方设置金球，金球连通第一基板的公共线和第二基板的公共电极，第一金属凹陷区增加了转接区的深度，可以使得涂布的金球和密封胶避免溢出转接区，提高显示质量。
附图说明
所包括的附图用来提供对本申请实施例的进一步的理解，其构成了说明书的一部分，用于例示本申请的实施方式，并与文字描述一起来阐释本申请的原理。显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。在附图中：
图1是本申请一实施例一种显示面板基本结构的示意图；
图2是图1中A-A’区域放大的示意图；
图3是图1中A-A’区域剖面图的示意图；
图4是本申请一实施例一种显示面板的结构的示意图；
图5是本申请一实施例另一种显示面板的结构的示意图；
图6是本申请一实施例另一种显示面板的流程示意图；
图7是本申请一实施例一种显示装置的结构示意图。
具体实施方式
这里所公开的具体结构和功能细节仅仅是代表性的，并且是描述本申请的示例性实施例的目的。但是本申请可以通过许多替换形式来具体实现，并且不应当被解释成仅仅受限于这里所阐述的实施例。
在本申请的描述中，需要理解的是，术语“中心”、“横向”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本申请的描述中，除非另有说明，“多个”的含义是两个或两个以上。另外，术语“包括”及其任何变形，意图在于覆盖不排他的包含。
在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本申请中的具体含义。
这里所使用的术语仅仅是为了描述具体实施例而不意图限制示例性实施例。除非上下文 明确地另有所指，否则这里所使用的单数形式“一个”、“一项”还意图包括复数。还应当理解的是，这里所使用的术语“包括”和/或“包含”规定所陈述的特征、整数、步骤、操作、单元和/或组件的存在，而不排除存在或添加一个或更多其他特征、整数、步骤、操作、单元、组件和/或其组合。
下面结合附图和可选的实施例对本申请作说明。
如图1至图6所示，本申请公开了一种显示面板，包括：
第一基板3、和所述第一基板3对置的第二基板80以及金球70，所述第一基板3包括公共线，所述第二基板80包括公共电极；所述金球70设置在所述显示面板2的非显示区200，导通所述第一基板3的公共线和第二基板80的公共电极，所述金球70设置的位置为转接区202；
所述第一基板3包括：衬底10、第一金属层20、栅极绝缘层30、第二金属层40、钝化层50以及透明电极层60，所述第一金属层20，设置在所述衬底10上，所述第一金属层20对应所述转接区202镂空，形成第一金属凹陷区21；所述栅极绝缘层30设置在所述第一金属层20上，对应第一金属凹陷区21镂空，形成栅极绝缘凹陷区31；所述第二金属层40设置在所述栅极绝缘层30上，所述第二金属层40对应栅极绝缘凹陷区31的部位镂空，形成第二金属凹陷区41；所述钝化层50设置在所述第二金属层40上，所述钝化层50对应所述第二金属凹陷区41的部位镂空，形成钝化凹陷区51；所述透明电极层60覆盖第一金属凹陷区21，所述透明电极层60与所述第一基板3的公共线连通；所述金球70设置在所述透明电极层60对应所述第一金属凹陷区21的位置，连通所述第一基板3的透明电极层60和所述第二基板80的公共电极。其中，衬底可以为玻璃基板。
液晶由加载在第一基板3和第二基板80之间形成的垂直电场使之转动，从而使液晶形成不同的偏转角度，从而使得上偏光片能透过不同强度的光。在电场加载过程中，为了使第一基板3上的公共线和第二基板80的公共电极相互导通，第一基板3的密封胶内要设置导电的转接区202，以便金球70接触上下基板；而不设置金球70的位置，则可不设置转接区202。在第一基板3的转接区202，铺设与公共线连通的导电层第一金属层20；而在不设置转接区202的位置处，则可对公共线镂空成网格状以便对密封胶照光固化，这种方案，在对盒后，金球70和密封胶涂布时，金球70若被挤压突出转接区202，就会造成上下基板导通不好，或盒厚异常，造成显示异常。而本方案中，在制作第一基板3时，在基板上覆盖一层金属材料层，将金属材料层对应转接区202的位置部分蚀刻掉，形成第一金属凹陷区21，在第一金属凹陷区21上方形成透明电极层60，并将透明电极层60与公共线电连接，再在透明电极层60的上方设置金球70，金球70连通第一基板3的公共线和第二基板80的公共电极，第一金属凹陷区21增加了转接区202的深度，可以使得涂布的金球70和密封胶避免 溢出转接区202，提高显示质量。其中，第一基板3为阵列基板，第二基板80为彩膜基板。
在一实施例中，参考图4所示，所述栅极绝缘凹陷区31的宽度大于所述第一金属凹陷区21的宽度；第一金属层20露出的表面为第一金属转接区90，所述第一金属转接区90覆盖有所述透明电极层60。本方案中，栅极绝缘凹陷区31的宽度大于第一金属凹陷区21的宽度，且第一金属凹陷区21和第一金属转接区90都覆盖有透明电极层60，透明电极层60和第一金属层20有充足的接触面积，使得透明电极层60和公共线的连通性更好，导电性更好，更稳定。
在一实施例中，所述第一金属层20和所述第一基板3的公共线通过同层形成，所述第一金属层20和所述第一基板3的公共线相互电连接。本方案中，第一基板3为阵列基板，第一金属层20和阵列基板的公共线通过同层形成，不需要通过打孔将电极进行连接，减少了制程。
在一实施例中，参考图4所示，所述栅极绝缘凹陷区31的宽度等于第二金属凹陷区41的宽度，所述栅极绝缘凹陷区31的宽度等于钝化凹陷区51的宽度。本方案中，栅极绝缘凹陷区31的宽度、第二金属凹陷区41的宽度以及钝化凹陷区51的宽度相等，金球70设置在第一金属凹陷区21的位置，由于其他凹陷区的宽度都相等且都大于第一金属凹陷区21的宽度，它们之间形成段差，金球70即使因受挤压力而发生偏移，金球70也不会往其他地方偏移，保证了金球70的导通效果。
在一实施例中，所述公共线设置在第一金属层20，所述透明电极层60和所述第一金属层20连通。本方案中，公共线设置在第一金属层20，而透明导电层覆盖在第一金属转接区90，透明导电层和公共线的导通效果好。当然所述公共线设置在所述第二金属层也是可以的，所述透明电极层和所述第二金属层连通。
在一实施例中，参考图5所示，所述钝化凹陷区51的宽度大于第二金属层40凹陷区的宽度，第二金属层40露出的表面为第二金属转接区91，所述透明电极层60覆盖栅极绝缘层30、第二金属层40对应第二金属凹陷区41一侧的侧壁和第二金属转接区91处。
本方案中，透明电极层60覆盖栅极绝缘层30、第二金属层40对应第二金属凹陷区41一侧的侧壁和第二金属转接区91处，并且透明电极层60通过第二金属转接区91与公共线连通，而在透明电极层60的上设置金球70，使得所述金球70连通所述第一基板3的透明电极层60和第二基板80的公共电极，最后实现第一基板3的公共线和第二基板80的公共电极相互导通。这样由于第二金属转接区91加宽了转接区202的整体宽度，可以使得涂布的密封胶避免溢出转接区202，提高显示质量。
在一实施例中，所述第二金属层40和所述第一基板3的公共线通过同层形成，所述第二金属层40和所述第一基板3的公共线相互电连接。本方案中，第一基板3为阵列基板， 第二金属层40和阵列基板的公共线通过同一道制程形成，减少光罩的使用，减少制程，从而提高生产效率。
在一实施例中，所述第二金属凹陷区41的宽度大于所述栅极绝缘凹陷区31的宽度，所述栅极绝缘凹陷区31的宽度大于所述第一金属凹陷区21的宽度。本方案中，所述第二金属凹陷区41的宽度大于所述栅极绝缘凹陷区31的宽度，所述栅极绝缘凹陷区31的宽度大于所述第一金属凹陷区21的宽度，从第一金属凹陷区21开始呈台阶状上升，相对来说，增大了密封胶的可容纳空间，提升显示质量。
作为本申请的另一实施例，参考图4所示，一种显示面板2，包括：
阵列基板、彩膜基板以及金球，所述阵列基板和所述彩膜基板相对设置；所述阵列基板包括公共线，所述彩膜基板包括公共电极；所述金球70设置在所述显示面板2的非显示区200，导通所述阵列基板的公共线和彩膜基板的公共电极，所述金球70设置的位置为转接区202；
所述阵列基板包括：衬底10、第一金属层20、栅极绝缘层30、第二金属层40、钝化层50以及透明电极层60，所述第一金属层20设置在所述基板上，所述第一金属层20对应所述转接区202镂空，形成第一金属凹陷区21；所述栅极绝缘层30设置在所述第一金属层20上，对应第一金属凹陷区21镂空，形成栅极绝缘凹陷区31，所述栅极绝缘凹陷区31的宽度大于所述第一金属凹陷区21的宽度，所述第一金属层露出的表面为第一金属转接区；所述第二金属层40设置在所述栅极绝缘层30上，所述第二金属层40对应栅极绝缘凹陷区31的部位镂空，形成第二金属凹陷区41；所述钝化层50设置在所述第二金属层40上，所述钝化层50对应所述第二金属凹陷区41的部位镂空，形成钝化凹陷区51；所述透明电极层60覆盖第一金属凹陷区21和第一金属转接区，所述透明电极层60与所述阵列基板的公共线连通；所述金球70设置在所述透明电极层60对应所述第一金属凹陷区21的位置，连通所述阵列基板的透明电极层60和所述彩膜基板的公共电极。
液晶由加载在第一基板3和第二基板80之间形成的垂直电场使之转动，从而使液晶形成不同的偏转角度，从而使得上偏光片能透过不同强度的光。在电场加载过程中，为了使第一基板3上的公共线和第二基板80的公共电极相互导通，第一基板3的密封胶内要设置导电的转接区202，以便金球70接触上下基板；而不设置金球70的位置，则可不设置转接区202。在第一基板3的转接区202，铺设与公共线连通的导电层第一金属层20；而在不设置转接区202的位置处，则可对公共线镂空成网格状以便对密封胶照光固化，这种方案，在对盒后，金球70和密封胶涂布时，金球70若被挤压突出转接区202，就会造成上下基板导通不好，或盒厚异常，造成显示异常。而本方案中，在制作第一基板3时，在基板上覆盖一层金属材料层，将金属材料层对应转接区202的位置部分蚀刻掉，形成第一金属凹陷区21， 在第一金属凹陷区21上形成透明电极层60，并将透明电极层60与公共线电连接，再在透明电极层60的上设置金球70，金球70连通第一基板3的公共线和第二基板80的公共电极，第一金属凹陷区21增加了转接区202的深度，可以使得涂布的金球70和密封胶避免溢出转接区202，提高显示质量。
其中，第一金属层20的厚度一般在
Figure PCTCN2018117657-appb-000001
第二金属层40的厚度一般在
Figure PCTCN2018117657-appb-000002
透明电极层60的厚度一般在
Figure PCTCN2018117657-appb-000003
其中，靠近第一连接区201的第一金属转接区90的宽度为X1，一般X1的范围为5μm≤X1≤500μm；靠近第二连接区203的第一金属转接区90的宽度为X2，一般X2的范围为5μm≤X2≤500μm。
作为本申请的另一实施例，参考图6，本申请还公开了一种显示面板2的制程，包括步骤：
S61：在衬底上覆盖一层金属材料层，将金属材料层对应转接区位置的中部蚀刻掉，形成位于非显示区的第一金属层和第一金属凹陷区以及位于显示区的公共线；
S62：在所述第一金属层上形成栅极绝缘层，并把所述栅极绝缘层对应转接区的部位蚀刻掉形成栅极绝缘凹陷区，所述栅极绝缘凹陷区的宽度大于所述第一金属凹陷区的宽度，第一金属层露出的表面为第一金属转接区；
S63：在所述栅极绝缘层上形成第二金属层，并把所述第二金属层对应所述栅极绝缘凹陷区的部位蚀刻掉；
S64：在所述第二金属层上形成钝化层，并把所述钝化层对应所述栅极绝缘凹陷区的部位蚀刻掉；
S65：在所述第一金属凹陷区上形成透明电极层，形成的所述透明电极层覆盖在第一金属凹陷区和第一金属转接区处，所述透明电极层与所述公共线连通形成第一基板；
S66：形成设有公共电极的第二基板；
S67：在所述透明电极层上设置金球，并使所述金球连通所述第一基板的透明电极层和第二的公共电极。
在一实施例中，在所述第一金属层上形成栅极绝缘层，并把所述栅极绝缘层对应转接区的部位蚀刻掉形成栅极绝缘凹陷区的步骤中，所述栅极绝缘凹陷区的宽度大于所述第一金属凹陷区的宽度，第一金属层露出的表面为第一金属转接区，形成的透明电极层覆盖所述第一金属转接区。本方案中，栅极绝缘凹陷区的宽度大于第一金属凹陷区的宽度，且第一金属凹陷区和第一金属转接区都覆盖有透明电极层，透明电极层和第一金属层有充足的接触面积，使得透明电极层和公共线的连通性更好，导电性更好，更稳定。
在一实施例中，所述第一金属层和所述第一基板的公共线通过同层形成，所述第一金属层和所述第一基板的公共线相互电连接。本方案中，公共线设置在第一金属层，而透明导电 层覆盖在第一金属转接区，透明导电层和公共线的导通效果好。
作为本申请的另一实施例，参考图7所示，本申请还公开了一种显示装置1，包括上述的显示面板2。
要说明的是，本方案中涉及到的各步骤的限定，在不影响具体方案实施的前提下，并不认定为对步骤先后顺序做出限定，写在前面的步骤可以是在先执行的，也可以是在后执行的，甚至也可以是同时执行的，只要能实施本方案，都应当视为属于本申请的保护范围。
本申请的面板可以是TN面板(全称为Twisted Nematic，即扭曲向列型面板)、IPS面板(In-PlaneSwitching，平面转换)、VA面板(Multi-domain Vertical Alignment，多象限垂直配向技术)，当然，也可以是其他类型的面板，适用即可。
以上内容是结合具体的可选实施方式对本申请所作的详细说明，不能认定本申请的具体实施只局限于这些说明。对于本申请所属技术领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干简单推演或替换，都应当视为属于本申请的保护范围。

Claims (17)

  1. 一种显示面板，包括：
    第一基板；
    第二基板，和所述第一基板对置；
    所述第一基板包括公共线，所述第二基板包括公共电极；
    金球，设置在所述显示面板的非显示区，导通所述第一基板的公共线和第二基板的公共电极，所述金球设置的位置为转接区；
    所述第一基板包括：
    衬底；
    第一金属层，设置在所述衬底上，所述第一金属层对应所述转接区镂空，形成第一金属凹陷区；
    栅极绝缘层，设置在所述第一金属层上，对应第一金属凹陷区镂空，形成栅极绝缘凹陷区；
    第二金属层，设置在所述栅极绝缘层上，所述第二金属层对应栅极绝缘凹陷区的部位镂空，形成第二金属凹陷区；
    钝化层，设置在所述第二金属层上，所述钝化层对应所述第二金属凹陷区的部位镂空，形成钝化凹陷区；以及
    透明电极层，覆盖第一金属凹陷区，所述透明电极层与所述第一基板的公共线连通；
    所述金球设置在所述透明电极层对应所述第一金属凹陷区的位置，连通所述第一基板的透明电极层和所述第二基板的公共电极。
  2. 如权利要求1所述的一种显示面板，其中，所述栅极绝缘凹陷区的宽度大于所述第一金属凹陷区的宽度；
    第一金属层露出的表面为第一金属转接区，所述第一金属转接区覆盖有所述透明电极层。
  3. 如权利要求2所述的一种显示面板，其中，所述第一金属转接区的宽度大于或等于5微米，且小于或等于500微米。
  4. 如权利要求1所述的一种显示面板，其中，所述第一金属层和所述第一基板的公共线通过同层形成，所述第一金属层和所述第一基板的公共线相互电连接。
  5. 如权利要求2所述的一种显示面板，其中，所述栅极绝缘凹陷区的宽度等于第二金属凹陷区的宽度，所述栅极绝缘凹陷区的宽度等于钝化凹陷区的宽度。
  6. 如权利要求2所述的一种显示面板，其中，所述公共线设置在第一金属层，所述透 明电极层和所述第一金属层连通。
  7. 如权利要求2所述的一种显示面板，其中，所述公共线设置在第二金属层，所述透明电极层和所述第二金属层连通。
  8. 如权利要求1所述的一种显示面板，其中，所述钝化凹陷区的宽度大于第二金属层凹陷区的宽度，第二金属层露出的表面为第二金属转接区，所述透明电极层覆盖栅极绝缘层、第二金属层对应第二金属凹陷区一侧的侧壁和第二金属转接区处。
  9. 如权利要求1所述的一种显示面板，其中，所述第二金属层和所述第一基板的公共线通过同层形成，所述第二金属层和所述第一基板的公共线相互电连接。
  10. 如权利要求8所述的一种显示面板，其中，所述第二金属凹陷区的宽度大于所述栅极绝缘凹陷区的宽度，所述栅极绝缘凹陷区的宽度大于所述第一金属凹陷区的宽度。
  11. 如权利要求1所述的一种显示面板，其中，所述第一基板为阵列基板，所述第二基板为彩膜基板。
  12. 如权利要求1所述的一种显示面板，其中，所述衬底为玻璃基板。
  13. 一种显示面板的制程，包括步骤：
    在衬底上覆盖一层金属材料层，将金属材料层对应转接区位置的中部蚀刻掉，形成位于非显示区的第一金属层和第一金属凹陷区以及位于显示区的公共线；
    在所述第一金属层上形成栅极绝缘层，并把所述栅极绝缘层对应转接区的部位蚀刻掉形成栅极绝缘凹陷区；
    在所述栅极绝缘层上形成第二金属层，并把所述第二金属层对应所述栅极绝缘凹陷区的部位蚀刻掉；
    在所述第二金属层上形成钝化层，并把所述钝化层对应所述栅极绝缘凹陷区的部位蚀刻掉；
    在所述第一金属凹陷区上形成透明电极层，所述透明电极层与所述公共线连通形成第一基板；
    形成设有公共电极的第二基板；以及
    在所述透明电极层上设置金球，并使所述金球连通所述第一基板的透明电极层和第二基板的公共电极。
  14. 如权利要求13所述的一种显示面板的制程，其中，在所述第一金属层上形成栅极绝缘层，并把所述栅极绝缘层对应转接区的部位蚀刻掉形成栅极绝缘凹陷区的步骤中，
    所述栅极绝缘凹陷区的宽度大于所述第一金属凹陷区的宽度，第一金属层露出的表面为第一金属转接区，形成的透明电极层覆盖所述第一金属转接区。
  15. 如权利要求13所述的一种显示面板的制程，其中，所述第一金属层和所述第一基 板的公共线通过同层形成，所述第一金属层和所述第一基板的公共线相互电连接。
  16. 一种显示装置，包括显示面板，所述显示面板包括：
    第一基板；
    第二基板，和所述第一基板对置；
    所述第一基板包括公共线，所述第二基板包括公共电极；
    金球，设置在所述显示面板的非显示区，导通所述第一基板的公共线和第二基板的公共电极，所述金球设置的位置为转接区；
    所述第一基板包括：
    衬底；
    第一金属层，设置在所述衬底上，所述第一金属层对应所述转接区镂空，形成第一金属凹陷区；
    栅极绝缘层，设置在所述第一金属层上，对应第一金属凹陷区镂空，形成栅极绝缘凹陷区；
    第二金属层，设置在所述栅极绝缘层上，所述第二金属层对应栅极绝缘凹陷区的部位镂空，形成第二金属凹陷区；
    钝化层，设置在所述第二金属层上，所述钝化层对应所述第二金属凹陷区的部位镂空，形成钝化凹陷区；以及
    透明电极层，覆盖第一金属凹陷区，所述透明电极层与所述第一基板的公共线连通；
    所述金球设置在所述透明电极层对应所述第一金属凹陷区的位置，连通所述第一基板的透明电极层和所述第二基板的公共电极。
  17. 如权利要求16所述的一种显示装置，其中，所述显示装置为扭曲向列型显示装置、平面转换显示装置和多象限垂直配向显示装置中的一种。
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