WO2020073383A1 - 一种显示面板和显示面板的制程 - Google Patents

一种显示面板和显示面板的制程 Download PDF

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Publication number
WO2020073383A1
WO2020073383A1 PCT/CN2018/113322 CN2018113322W WO2020073383A1 WO 2020073383 A1 WO2020073383 A1 WO 2020073383A1 CN 2018113322 W CN2018113322 W CN 2018113322W WO 2020073383 A1 WO2020073383 A1 WO 2020073383A1
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WO
WIPO (PCT)
Prior art keywords
substrate
metal layer
layer
display panel
gate insulating
Prior art date
Application number
PCT/CN2018/113322
Other languages
English (en)
French (fr)
Inventor
吴川
Original Assignee
惠科股份有限公司
重庆惠科金渝光电科技有限公司
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Application filed by 惠科股份有限公司, 重庆惠科金渝光电科技有限公司 filed Critical 惠科股份有限公司
Priority to US16/319,484 priority Critical patent/US20210364875A1/en
Publication of WO2020073383A1 publication Critical patent/WO2020073383A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

Definitions

  • the present application relates to the field of display technology, and more specifically, to a display panel and a manufacturing process of the display panel.
  • the display panel Due to the superior characteristics of high image quality, good space utilization efficiency, low power consumption, and no radiation, the display panel has gradually become the mainstream of the market.
  • the liquid crystal is rotated by the vertical electric field loaded between the color filter substrate and the array substrate, so that the liquid crystal forms a different deflection angle, thereby making The upper polarizer can transmit light of different intensities.
  • the electric field on the color filter substrate is transferred from the array substrate to the color filter substrate by the Transfer Pad.
  • a circle of mesh common electrode traces of the first metal layer and the second metal layer is arranged around the panel, and the Transfer Pad is designed at a suitable position.
  • the application provides a display panel and a manufacturing process of the display panel, so as to avoid the edge of the display area being raised, so as to improve the production yield of the panel.
  • a display panel including:
  • a second substrate opposite to the first substrate
  • the first substrate includes a common line, and the second substrate includes a common electrode;
  • the gold ball is provided in the non-display area of the display panel, and connects the common line of the first substrate and the common electrode of the second substrate, and the position of the gold ball is the transition area;
  • a first connection area connected to the transition area and close to the display area of the display panel
  • the second connection area is located at the periphery of the transition area
  • the first substrate includes:
  • a gate insulating layer is provided on the first surface of the first metal layer, and the gate insulating layer is hollowed out corresponding to the transition area to form a gate insulating recessed area;
  • a second metal layer provided only on the first surface of the gate insulating layer of the second connection region
  • the passivation layer which is provided on the first surface of the gate insulating layer in the first connection region and the first surface of the second metal layer in the second connection region, is hollowed out corresponding to the gate insulation depression region;
  • the transparent electrode layer is disposed at the position corresponding to the transition region of the first metal layer, and covers at least the side wall of the passivation layer corresponding to the transition region in the first connection region, and the gate insulating layer and the second of the second connection region Side walls of metal layer and passivation layer;
  • the gold ball is disposed on the first surface of the transparent electrode layer, and connects the common line of the first substrate and the common electrode of the second substrate.
  • This application discloses a display panel, including:
  • a color film substrate, the array substrate and the color film substrate are oppositely arranged;
  • the array substrate includes a common line, and the color filter substrate includes a common electrode;
  • the gold ball is arranged in the non-display area of the display panel, and connects the common line of the array substrate and the common electrode of the color filter substrate, and the position of the gold ball is the transition area;
  • a first connection area connected to the transition area and close to the display area of the display panel
  • the second connection area is located at the periphery of the transition area
  • the array substrate includes:
  • a gate insulating layer is provided on the first surface of the first metal layer, and the gate insulating layer is hollowed out corresponding to the transition area to form a gate insulating recessed area;
  • a second metal layer provided only on the first surface of the gate insulating layer of the second connection region
  • the passivation layer which is provided on the first surface of the gate insulating layer in the first connection region and the first surface of the second metal layer in the second connection region, is hollowed out corresponding to the gate insulation depression region;
  • the transparent electrode layer is disposed at the position corresponding to the transition region of the first metal layer, and covers at least the side wall of the passivation layer corresponding to the transition region in the first connection region, and the gate insulating layer and the second of the second connection region Side walls of metal layer and passivation layer;
  • the gold ball is disposed on the first surface of the transparent electrode layer, and connects the common line of the array substrate and the common electrode of the color filter substrate.
  • the common line of the first metal layer and the array substrate is made of the same mask, and is electrically connected.
  • This application also discloses a manufacturing process of a display panel, including:
  • a transparent electrode layer is formed on the first surface of the first metal layer corresponding to the transition region, and the transparent electrode layer simultaneously covers the passivation layer of the first connection region, the gate insulation layer corresponds to the side wall of the transition region, and The passivation layer, the second metal layer and the gate insulating layer of the connection region correspond to the side walls of the transition region, and the transparent electrode layer communicates with the common line to form a first substrate;
  • a gold ball is provided on the first surface of the transparent electrode layer, and the gold ball is connected to the common line of the first substrate and the common electrode of the second substrate.
  • VA Vertical Alignment
  • the liquid crystal is rotated by the vertical electric field loaded between the color filter substrate and the array substrate, so that the liquid crystal forms a different deflection angle, so that the upper polarizer passes through different strengths Light.
  • the electric field on the color filter substrate leads the signal from the array substrate to the color filter substrate from the transfer area.
  • a circle of VCOM (common voltage) traces of the first metal layer and the second metal layer is arranged around the panel, and the transition area is designed at an appropriate position.
  • the second metal layer is not provided at the location of the transition area.
  • a transparent electrode layer is laid on the first surface of the first metal layer to form the transition area.
  • the VCOM signal transmitted by the first metal layer is in the transition area
  • the area passes through the first metal layer to the transparent electrode layer, then passes through the gold ball to the CF (Color Filter) transparent electrode layer, and is transferred from the array substrate to the CF substrate.
  • CF Color Filter
  • the position of the gold ball formation is often shifted from the position of the designed transfer area, so that the gold ball is shifted to the first connection area, Even the first surface of the first metal layer and the second metal layer formed in the first connection area, such that the transition area is closer to the display area, the cell thickness at the edge of the display area will be raised and Mura will appear;
  • the second metal layer is provided only on the first surface of the gate insulating layer of the second connection region, and the second metal layer of the first connection region is etched away, so that the total film thickness of the region of the first connection region Reduce, so even if part of the gold ball is offset to the position of the first connection area, there can be enough space to accommodate the gold ball, thereby reducing the height of the gold ball to the edge of the display area, to avoid the edge of the display area from being raised by the Mura It is helpful to improve the display effect of the display panel and the production yield of the display panel, especially
  • FIG. 1 is a schematic diagram of a basic structure of a display panel according to one embodiment of the present application.
  • FIG. 2 is an enlarged schematic view of the area A-A 'in FIG. 1 according to one embodiment of the present application;
  • FIG. 3 is a schematic diagram of a cross-sectional view of the area A-A 'in FIG. 1;
  • FIG. 4 is a schematic diagram of a structure of a display panel according to an embodiment of the present application.
  • FIG. 5 is a schematic diagram of a structure of a display panel according to yet another embodiment of the present application.
  • FIG. 6 is a flowchart of a method for displaying a panel according to an embodiment of the present application.
  • the features defined as “first” and “second” may explicitly or implicitly include one or more of the features.
  • the meaning of “plurality” is two or more.
  • the term “including” and any variations thereof are intended to cover non-exclusive inclusions.
  • connection should be understood in a broad sense, for example, it can be fixed or detachable Connected, or connected integrally; either mechanically or electrically; directly connected, or indirectly connected through an intermediary, or internally connected between two components.
  • installation should be understood in a broad sense, for example, it can be fixed or detachable Connected, or connected integrally; either mechanically or electrically; directly connected, or indirectly connected through an intermediary, or internally connected between two components.
  • the first surface corresponds to the upper surface.
  • an embodiment of the present application discloses a display panel, including:
  • a gold ball is provided in the non-display area of the display panel, conducting the common line of the first substrate 2 and the common electrode of the second substrate 80, and the position of the gold ball is the transition area;
  • the first connection area 201 is connected to the transition area and is close to the display area 100 of the display panel;
  • the second connection area 203 is located at the periphery of the transition area 202;
  • the first substrate 2 includes:
  • the first metal layer 20 covers the first surface of the substrate 10;
  • the gate insulating layer 30 is disposed on the first surface of the first metal layer 20, and the gate insulating layer 30 is hollowed out corresponding to the transition region 202 to form a gate insulating recessed region 301;
  • the second metal layer 40 is provided only on the first surface of the gate insulating layer 30 of the second connection region 203; the passivation layer 50 is provided on the first surface of the gate insulating layer 30 of the first connection region 201
  • the surface and the first surface of the second metal layer 40 of the second connection region 203 are hollowed out corresponding to the gate insulating recessed region 301;
  • the transparent electrode layer 60 is disposed at the position of the first metal layer 20 corresponding to the transition region 202 and covers at least the side wall of the passivation layer 50 corresponding to the transition region 202 of the first connection region 201 and the side of the second connection region 203 The sidewalls of the gate insulating layer 30, the second metal layer 40, and the passivation layer 50;
  • the array substrate includes a common line, and the color filter substrate includes a common electrode;
  • the gold ball 70 is disposed on the first surface of the transparent electrode layer 60, and connects the common line of the first substrate 2 and the common electrode of the second substrate 80.
  • the first substrate 2 is an array substrate, and the second substrate 80 is a color filter substrate.
  • VA Vertical Alignment
  • the liquid crystal is rotated by the vertical electric field formed between the color filter substrate and the array substrate, so that the liquid crystal forms a different deflection angle, so that the upper polarizer can transmit different strengths Light.
  • the electric field of the second substrate 80 is guided from the array substrate to the second substrate 80 by the transition region 202.
  • a circle of mesh VCOM traces of the first metal layer 20 and the second metal layer 40 is arranged around the panel, and the transition area 202 is designed at a suitable position.
  • the second metal layer 40 is not provided at the position of the transition area 202.
  • a transparent electrode layer 60 is laid on the first surface of the first metal layer 20 to form the transition area 202.
  • the first metal layer 20 transmits The VCOM signal passes through the first metal layer 20 to the transparent electrode layer 60, then passes through the gold ball 70 to the CF transparent electrode layer 60 in the area of the transfer area 202, and is transmitted from the array substrate to the color filter substrate.
  • the position of the gold ball 70 (dot formation) is often shifted from the position of the designed transition area 202, so that the gold ball 70 is shifted to the first connection At the area 201, even formed on the first surface of the area of the first metal layer 20 and the second metal layer 40 of the first connection area 201, such that the transition area 202 is closer to the display area 100, which will cause the edge of the display area 100
  • the thickness of the box is raised by the height and Mura appears; in this solution, the second metal layer 40 is provided only on the first surface of the gate insulating layer 30 of the second connection region 203, the second of the first connection region 201
  • the metal layer 40 is etched away, so that the total film thickness of the first connection region 201 is reduced.
  • the golden ball 70 can be used to raise the edge of the display area 100 to avoid the Mura caused by the edge of the display area 100 being advanced, which is beneficial to improve the display effect of the display panel 1 and improve the display panel 1, especially the narrow border display panel 1 rate.
  • the common line is the COM electrode of the non-display area 200 of the array substrate, and the common electrode is the CF electrode of the color filter substrate.
  • the second metal layer 40 is arranged only at the transition area 202 corresponding to the gold ball 70.
  • the first metal layer 20 is hollowed out corresponding to the first connection area 201.
  • the portion of the first metal layer 20 located at the first connection region 201 is etched away to prevent the gold ball 70 from being lifted up, the box formation is not uniform, and light leakage may occur.
  • the common line of the first metal layer 20 and the non-display area 200 of the array substrate is made of the same photomask and is electrically connected.
  • the common line of the first metal layer 20 and the array substrate is formed by the same process, and the electrodes are not connected by drilling, which reduces the process.
  • the second metal layer 40 and the common line of the non-display area 200 of the array substrate are made of the same photomask and are electrically connected.
  • the second metal layer 40 and the COM electrode of the non-display area 200 of the array substrate are formed by the same process, and the electrodes are not connected by drilling, which reduces the process.
  • the common line of the array substrate and the first metal layer 20 or the second metal layer 40 are made through the same photomask, and the first metal layer 20 and the second metal layer 40 are electrically connected through vias .
  • a display panel including:
  • the gold ball 70 is provided in the non-display area 200 of the display panel, and connects the common line of the array substrate and the common electrode of the color filter substrate, and the position of the gold ball is the transition area;
  • the first connection area 201 is connected to the transition area 202 and is close to the display area 100 of the display panel;
  • the second connection area 203 is located at the periphery of the transition area 202;
  • the array substrate includes:
  • the first metal layer 20 covers the first surface of the substrate 10;
  • the gate insulating layer 30 is disposed on the first surface of the first metal layer 20, and the gate insulating layer 30 is hollowed out corresponding to the transition region 202 to form a gate insulating recessed region 301;
  • the second metal layer 40 is provided only on the first surface of the gate insulating layer 30 of the second connection region 203;
  • the passivation layer 50 is provided on the first surface of the gate insulating layer 30 of the first connection region 201 and the first surface of the second metal layer 40 of the second connection region 203, corresponding to hollowing at the gate insulating recessed region 301;
  • the transparent electrode layer 60 is disposed at the position of the first metal layer 20 corresponding to the transition region 202 and covers at least the side wall of the passivation layer 50 corresponding to the transition region 202 of the first connection region 201 and the second connection region 203 The sidewalls of the gate insulating layer 30, the second metal layer 40, and the passivation layer 50;
  • the gold ball 70 is provided on the first surface of the transparent electrode layer 60, and connects the common line of the array substrate and the common electrode of the color filter substrate;
  • the common line of the first metal layer 20 and the array substrate is made of the same photomask and is electrically connected.
  • a manufacturing process of the display panel 1 including:
  • S61 covering the substrate 10 with a metal material layer, and etching the metal material layer to form the first metal layer 20 and the common line;
  • a transparent electrode layer 60 is formed on the first surface of the first metal layer 20 corresponding to the transfer region 202, and the transparent electrode layer 60 covers the passivation layer 50 and the gate insulating layer 30 of the first connection region 201 at the same time.
  • the side wall of the contact area 202, and the passivation layer 50, the second metal layer 40, and the gate insulating layer 30 of the second connection area 203 correspond to the side wall of the transition area 202, and the transparent electrode layer communicates with the common line Forming an array substrate;
  • S66 Form a gold ball 70 on the first surface of the transparent electrode layer 60, and connect the gold ball 70 to the common line of the array substrate and the common electrode of the second substrate 80.
  • VA Vertical Alignment
  • the liquid crystal is rotated by the vertical electric field formed between the color filter substrate and the array substrate, so that the liquid crystal forms a different deflection angle, so that the upper polarizer can transmit different strengths Light.
  • the electric field on the second substrate 80 is guided from the array substrate to the second substrate 80 by the transition region 202.
  • a circle of mesh VCOM traces of the first metal layer 20 and the second metal layer 40 is arranged around the panel, and the transition area 202 is designed at a suitable position.
  • the second metal layer 40 is not provided at the location of the transition area 202.
  • a transparent electrode layer 60 is laid on the first metal layer 20 to form the transition area 202.
  • the common voltage transmitted by the first metal layer 20 The signal passes through the first metal layer 20 to the transparent electrode layer 60 and then passes through the gold ball 70 to the CF transparent electrode layer 60 in the area of the transfer area 202, and then is transmitted from the array substrate to the color filter substrate.
  • the position of the gold ball 70 (dot formation) is often shifted from the position of the designed transition area 202, so that the gold ball 70 is shifted to the first connection At the area 201, even formed on the first surface of the area of the first metal layer 20 and the second metal layer 40 of the first connection area 201, so that the transition area 202 is closer to the display area 100, which will cause the edge of the display area 100
  • the thickness of the box is raised by the height and Mura appears; in this solution, the second metal layer 40 is provided only on the first surface of the gate insulating layer 30 of the second connection region 203, the second of the first connection region 201
  • the metal layer 40 is etched away, so that the total film thickness of the first connection region 201 is reduced.
  • the golden ball 70 can be used to raise the edge of the display area 100 to avoid the Mura caused by the edge of the display area 100 being advanced, which is beneficial to improve the display effect of the display panel 1 and improve the display panel 1, especially the narrow border display panel 1 rate.
  • the step of forming the first metal layer 20 on the metal material layer further includes: etching away the portion of the first metal layer 20 corresponding to the first connection region 201.
  • the portion of the first metal layer 20 located at the first connection region 201 is etched away to prevent the gold ball 70 from being lifted up, the box formation is not uniform, and light leakage may occur.
  • the transparent electrode layer 60 does not cover the sidewall of the gate insulating layer 30 corresponding to the transition region 202; if the gate insulating layer 30 Is greater than the thickness of the first metal layer 20, the transparent electrode layer 60 covers the upper portion of the sidewall of the gate insulating layer 30 corresponding to the transition region 202.
  • the common lines of the first metal layer 20 and the array substrate are formed by the same process and are electrically connected to each other.
  • the common line of the first metal layer 20 and the array substrate is formed by the same process, and the electrodes are not connected by drilling, which reduces the process.
  • the second metal layer 40 and the common line of the array substrate are formed by the same process and are electrically connected to each other.
  • the common line of the second metal layer 40 and the array substrate is formed by the same process, and the electrodes are not connected by drilling, which reduces the process.
  • the common line of the array substrate and the first metal layer 20 or the second metal layer 40 are made through the same mask, and the first metal layer 20 and the second metal layer 40 pass through the via Electrical connection.
  • the first metal layer 20 and the second metal layer 40 are electrically connected through vias, which reduces the possibility of disconnection caused by disconnection; when the common line of the array substrate is on the same layer as the first metal layer 20 and is electrically connected, the second The metal layer 40 is insulated from the second metal layer 40 of the display area 100; when the common line and the second metal layer 40 are in the same layer and electrically connected, the first metal layer 20 and the first metal layer 20 of the display area 100 are insulated to prevent Crosstalk.
  • the panel of this application may be a TN panel (full name Twisted Nematic), an IPS panel (In-Plane Switching), a VA panel (Multi-domain Vertical Alignment, multi-quadrant vertical alignment technology), , Can also be other types of panels, just apply.
  • TN panel full name Twisted Nematic
  • IPS panel In-Plane Switching
  • VA panel Multi-domain Vertical Alignment, multi-quadrant vertical alignment technology

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Abstract

本申请公开了一种显示面板和显示面板的制程。显示面板包括：第一基板和第二基板；金球，导通第一基板的公共线和第二基板的公共电极。

Description

一种显示面板和显示面板的制程
本申请要求于2018年10月10日提交中国专利局、申请号为201811178085.7、发明名称为“一种显示面板和显示面板的制程”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及显示技术领域，更具体的说，涉及一种显示面板和显示面板的制程。
背景技术
这里的陈述仅提供与本申请有关的背景信息，而不必然地构成现有技术。
由于显示面板具有高画质、空间利用效率佳、低消耗功率、无辐射等优越特性，目前已逐渐成为市场的主流。
在VA(Vertical Alignment)技术的LCD(Liquid Crystal Display，液晶显示器)中，液晶由加载在彩膜基板和阵列基板之间形成的垂直电场使之转动，从而使液晶形成不同的偏转角度，从而使得上偏光片能透过不同强度的光。在电场加载过程中，彩膜基板上的电场由Transfer Pad(转接区)将信号从阵列基板导入至彩膜基板。通常在面板周边设置一圈第一金属层和第二金属层的网状公共电极走线，在合适的位置设计Transfer Pad(转接区)。Transfer Pad(转接区)位置在第一金属层或者第一金属层和第二金属层的上表面铺上透明导电层即形成Transfer Pad(转接区)，面板实际工作过程中，由第一金属层传输的公共电极信号在转接区通过第一金属层经过金球最后传到彩膜基板的公共电极，从阵列基板传输至彩膜基板。
但是，在窄边框(Narrow Border)产品中，由于制程所限，经常会使得金球(打点形成)位置偏移设计的Transfer Pad(转接区)位置，会产生Mura(斑点)。
技术解决方案
本申请是提供一种显示面板和显示面板的制程，避免显示区边缘被垫高，以提升面板生产良率的。
为实现上述目的，本申请提供了一种显示面板，包括：
第一基板；
第二基板，和所述第一基板对置；
所述第一基板包括公共线，所述第二基板包括公共电极；
金球，设置在所述显示面板的非显示区，导通所述第一基板的公共线和第二基板的公共电极，所述金球设置的位置为转接区；
第一连接区，与所述转接区连接且靠近所述显示面板的显示区；
第二连接区，位于所述转接区的外围；
所述第一基板包括：
衬底；
第一金属层，覆盖在所述衬底的第一表面；
栅极绝缘层，设置在所述第一金属层的第一表面，所述栅极绝缘层对应转接区镂空，形成栅极绝缘凹陷区；
第二金属层，设置且仅设置在所述第二连接区的栅极绝缘层的第一表面；
钝化层，设置在第一连接区的栅极绝缘层的第一表面，以及第二连接区 的第二金属层的第一表面，对应栅极绝缘凹陷区处镂空；
透明电极层，设置在第一金属层对应转接区的位置，并至少覆盖在第一连接区的钝化层对应转接区的侧壁，以及第二连接区的栅极绝缘层、第二金属层和钝化层的侧壁；
所述金球设置在所述透明电极层的第一表面，连通所述第一基板的公共线和所述第二基板的公共电极。
本申请公开了一种显示面板，包括：
阵列基板；
彩膜基板，所述阵列基板和所述彩膜基板相对设置；
所述阵列基板包括公共线，所述彩膜基板包括公共电极；
金球，设置在所述显示面板的非显示区，导通所述阵列基板的公共线和彩膜基板的公共电极，所述金球设置的位置为转接区；
第一连接区，与所述转接区连接且靠近所述显示面板的显示区；
第二连接区，位于所述转接区的外围；
所述阵列基板包括：
衬底；
第一金属层，覆盖在所述衬底的第一表面；
栅极绝缘层，设置在所述第一金属层的第一表面，所述栅极绝缘层对应转接区镂空，形成栅极绝缘凹陷区；
第二金属层，设置且仅设置在所述第二连接区的栅极绝缘层的第一表面；
钝化层，设置在第一连接区的栅极绝缘层的第一表面，以及第二连接区 的第二金属层的第一表面，对应栅极绝缘凹陷区处镂空；
透明电极层，设置在第一金属层对应转接区的位置，并至少覆盖在第一连接区的钝化层对应转接区的侧壁，以及第二连接区的栅极绝缘层、第二金属层和钝化层的侧壁；
所述金球设置在所述透明电极层的第一表面，连通所述阵列基板的公共线和所述彩膜基板的公共电极。
所述第一金属层和阵列基板的公共线通过同一道光罩制成，且电连接。
本申请还公开了一种显示面板的制程，包括：
在衬底的上表面覆盖一层金属材料层，并蚀刻金属材料层形成第一金属层；
在第一金属层的第一表面形成栅极绝缘层，并把栅极绝缘层对应转接区的部位部分蚀刻掉形成栅极绝缘凹陷区；
在栅极绝缘层的第一表面形成第二金属层，并把第一连接区和转接区的第二金属层蚀刻掉；
在第一连接区的栅极绝缘层的第一表面以及第二连接区的第二金属层的第一表面形成钝化层，并把栅极绝缘层对应转接区的部分蚀刻掉；
在第一金属层对应转接区的第一表面形成透明电极层，并使得透明电极层同时覆盖在第一连接区的钝化层、栅极绝缘层对应转接区的侧壁，以及第二连接区的钝化层、第二金属层和栅极绝缘层对应转接区的侧壁，所述透明电极层与所述公共线连通形成第一基板；
形成设有公共电极的第二基板；
在透明电极层的第一表面设置金球，并使金球连通第一基板的公共线和第二基板的公共电极。
在VA(Vertical Alignment)技术的LCD中，液晶由加载在彩膜基板和阵列基板之间形成的垂直电场使之转动，从而使液晶形成不同的偏转角度，从而使得上偏光片透过不同强度的光。在电场加载过程中，彩膜基板上的电场由转接区将信号从阵列基板导入至彩膜基板。通常在面板周边设置一圈第一金属层和第二金属层的网状VCOM(公共电压)走线，在合适的位置设计转接区。转接区位置不设置第二金属层，在第一金属层的第一表面铺上透明电极层即形成转接区，面板实际工作过程中，由第一金属层传输的VCOM信号在转接区区域通过第一金属层到透明电极层再通过金球最后传到CF(Color Filter，彩膜基板)透明电极层，从阵列基板传输至CF基板。但是，在窄边框(Narrow Border)产品中，由于制程所限，经常会使得金球形成(打点形成)位置偏移设计的转接区位置，使得金球偏移至该第一连接区处，甚至形成在该第一连接区的第一金属层和第二金属层的区域的第一表面，如此转接区离显示区较近，会使得显示区边缘的盒厚被垫高而出现Mura；本方案中，第二金属层设置且仅设置在第二连接区的栅极绝缘层的第一表面，第一连接区的第二金属层蚀刻掉，使得该第一连接区的区域总膜厚降低，如此，即使部分金球偏移到该第一连接区位置，也可以有足够的空间容纳该金球，而从而减少金球垫高显示区边缘，避免显示区边缘被垫高引起的Mura，有利于提升显示面板的显示效果，提高显示面板，特别是窄边框显示面板的生产良率。
附图说明
所包括的附图用来提供对本申请实施例的进一步的理解，其构成了说明 书的一部分，用于例示本申请的实施方式，并与文字描述一起来阐释本申请的原理。显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。在附图中：
图1是本申请其中一个实施例一种显示面板基本结构的示意图；
图2是本申请其中一个实施例图1中A-A’区域放大的示意图；
图3是图1中A-A’区域剖面图的示意图；
图4是本申请其中一个实施例一种显示面板的结构的示意图；
图5是本申请又一实施例一种显示面板的结构的示意图；
图6是本申请其中一个实施例一种显示面板的方法流程图。
本申请的实施方式
这里所公开的具体结构和功能细节仅仅是代表性的，并且是用于描述本申请的示例性实施例的目的。但是本申请可以通过许多替换形式来具体实现，并且不应当被解释成仅仅受限于这里所阐述的实施例。
在本申请的描述中，需要理解的是，术语“中心”、“横向”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。 在本申请的描述中，除非另有说明，“多个”的含义是两个或两个以上。另外，术语“包括”及其任何变形，意图在于覆盖不排他的包含。
在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本申请中的具体含义。
这里所使用的术语仅仅是为了描述具体实施例而不意图限制示例性实施例。除非上下文明确地另有所指，否则这里所使用的单数形式“一个”、“一项”还意图包括复数。还应当理解的是，这里所使用的术语“包括”和/或“包含”规定所陈述的特征、整数、步骤、操作、单元和/或组件的存在，而不排除存在或添加一个或更多其他特征、整数、步骤、操作、单元、组件和/或其组合。
其中，第一表面对应如上表面。
下面结合附图和可选的实施例对本申请作进一步说明。
如图1至图5所示，本申请一实施例公开了一种显示面板，包括：
第一基板2，和所述第一基板2对置的第二基板80；所述第一基板2包括公共线，所述第二基板80包括公共电极；
金球，设置在所述显示面板的非显示区，导通所述第一基板2的公共线和第二基板80的公共电极，所述金球设置的位置为转接区；
第一连接区201，与所述转接区连接且靠近所述显示面板的显示区100；
第二连接区203，位于所述转接区202的外围；
所述第一基板2包括：
衬底10：
第一金属层20，覆盖在所述衬底10的第一表面；
栅极绝缘层30，设置在所述第一金属层20的第一表面，所述栅极绝缘层30对应转接区202镂空，形成栅极绝缘凹陷区301；
第二金属层40，设置且仅设置在所述第二连接区203的栅极绝缘层30的第一表面；钝化层50，设置在第一连接区201的栅极绝缘层30的第一表面，以及第二连接区203的第二金属层40的第一表面，对应栅极绝缘凹陷区301处镂空；
透明电极层60，设置在第一金属层20对应转接区202的位置，并至少覆盖在第一连接区201的钝化层50对应转接区202的侧壁，以及第二连接区203的栅极绝缘层30、第二金属层40和钝化层50的侧壁；
所述阵列基板包括公共线，所述彩膜基板包括公共电极；
所述金球70设置在所述透明电极层60的第一表面，连通所述第一基板2的公共线和所述第二基板80的公共电极。
其中，第一基板2为阵列基板，第二基板80为彩膜基板。
在VA(Vertical Alignment)技术的LCD中，液晶由加载在彩膜基板和阵列基板之间形成的垂直电场使之转动，从而使液晶形成不同的偏转角度，从而使得上偏光片能透过不同强度的光。在电场加载过程中，第二基板80的电场由转接区202将信号从阵列基板导入至第二基板80。通常在面板周边设置一圈第一金属层20和第二金属层40的网状VCOM走线，在合适的位置设计转接区202。转接区202位置不设置第二金属层40，在第一金属层20的第一表面铺上透明电极层60即 形成转接区202，面板实际工作过程中，由第一金属层20传输的VCOM信号在转接区202区域通过第一金属层20到透明电极层60再通过金球70最后传到CF透明电极层60，从阵列基板传输至彩膜基板。但是，在窄边框(Narrow Border)产品中，由于制程所限，经常会使得金球70形成(打点形成)位置偏移设计的转接区202位置，使得金球70偏移至该第一连接区201处，甚至形成在该第一连接区201的第一金属层20和第二金属层40的区域的第一表面，如此转接区202离显示区100较近，会使得显示区100边缘的盒厚被垫高而出现Mura；本方案中，第二金属层40设置且仅设置在所述第二连接区203的栅极绝缘层30的第一表面，第一连接区201的第二金属层40蚀刻掉，使得该第一连接区201的区域总膜厚降低，如此，即使部分金球70偏移到该第一连接区201位置，也可以有足够的空间容纳该金球70，而从而减少金球70垫高显示区100边缘，避免显示区100边缘被垫高引起的Mura，有利于提升显示面板1的显示效果，提高显示面板1，特别是窄边框显示面板1的生产良率。
其中，公共线为阵列基板的非显示区200的COM电极，公共电极为彩膜基板的CF电极。
特别说明的是，该第二金属层40的设置只是在对应设置在金球70的转接区202处才这样。
本申请一实施例，所述第一金属层20对应所述第一连接区201处镂空。
第一金属层20位于第一连接区201处的部位蚀刻掉了，防止金球70被顶高，成盒不均匀，可能出现漏光。
本申请一实施例，所述第一金属层20和阵列基板的非显示区200的公 共线通过同一道光罩制成，且电连接。
第一金属层20和阵列基板的公共线通过同一道制程形成，不用通过打孔将电极进行连接，减少了制程。
本申请一实施例，所述第二金属层40和阵列基板的非显示区200的公共线通过同一道光罩制成，且电连接。
第二金属层40和阵列基板的非显示区200的COM电极通过同一道制程形成，不用通过打孔将电极进行连接，减少了制程。
本申请一实施例，所述阵列基板的公共线与所述第一金属层20或第二金属层40通过同一道光罩制成，第一金属层20和第二金属层40通过过孔电连接。
作为本申请的另一实施例，参考图4所示，公开了一种显示面板，包括：
阵列基板，和阵列基板相对设置的彩膜基板；所述阵列基板包括公共线，所述彩膜基板包括公共电极；
金球70，设置在所述显示面板的非显示区200，导通所述阵列基板的公共线和彩膜基板的公共电极，所述金球设置的位置为转接区；
第一连接区201，与所述转接区202连接且靠近所述显示面板的显示区100；
第二连接区203，位于所述转接区202的外围；
所述阵列基板包括：
衬底10；
第一金属层20，覆盖在所述衬底10的第一表面；
栅极绝缘层30，设置在所述第一金属层20的第一表面，所述栅极绝缘 层30对应转接区202镂空，形成栅极绝缘凹陷区301；
第二金属层40，设置且仅设置在所述第二连接区203的栅极绝缘层30的第一表面；
钝化层50，设置在第一连接区201的栅极绝缘层30的第一表面，以及第二连接区203的第二金属层40的第一表面，对应栅极绝缘凹陷区301处镂空；
透明电极层60，设置在第一金属层20对应转接区202的位置，并至少覆盖在第一连接区201的钝化层50对应转接区202的侧壁，以及第二连接区203的栅极绝缘层30、第二金属层40和钝化层50的侧壁；
金球70设置在所述透明电极层60的第一表面，连通所述阵列基板的公共线和所述彩膜基板的公共电极；
所述第一金属层20和阵列基板的公共线通过同一道光罩制成，且电连接。
作为本申请的另一实施例，参考图6所示，公开了一种显示面板1的制程，包括：
S61：在衬底10覆盖一层金属材料层，并蚀刻金属材料层形成第一金属层20和公共线；
S62：在第一金属层20的第一表面形成栅极绝缘层30，并把栅极绝缘层30对应转接区202的部位部分蚀刻掉形成栅极绝缘凹陷区301；
S63：在栅极绝缘层30的第一表面形成第二金属层40，并把第一连接区201和转接区202的第二金属层40蚀刻掉；
S64：在第一连接区201的栅极绝缘层30的第一表面以及第二连接区 203的第二金属层40的第一表面形成钝化层50，并把栅极绝缘层30对应转接区202的部分蚀刻掉；
S65：在第一金属层20对应转接区202的第一表面形成透明电极层60，并使得透明电极层60同时覆盖在第一连接区201的钝化层50、栅极绝缘层30对应转接区202的侧壁，以及第二连接区203的钝化层50、第二金属层40和栅极绝缘层30对应转接区202的侧壁，所述透明电极层与所述公共线连通形成阵列基板；
形成设有公共电极的彩膜基板；
S66：在透明电极层60的第一表面形成金球70，并使金球70连通阵列基板的公共线和第二基板80的公共电极。
在VA(Vertical Alignment)技术的LCD中，液晶由加载在彩膜基板和阵列基板之间形成的垂直电场使之转动，从而使液晶形成不同的偏转角度，从而使得上偏光片能透过不同强度的光。在电场加载过程中，第二基板80上的电场由转接区202将信号从阵列基板导入至第二基板80。通常在面板周边设置一圈第一金属层20和第二金属层40的网状VCOM走线，在合适的位置设计转接区202。转接区202位置不设置第二金属层40，在第一金属层20之上铺上透明电极层60即形成转接区202，面板实际工作过程中，由第一金属层20传输的公共电压信号在转接区202区域通过第一金属层20到透明电极层60再通过金球70最后传到CF透明电极层60，从阵列基板传输至彩膜基板。但是，在窄边框(Narrow Border)产品中，由于制程所限，经常会使得金球70形成(打点形成)位置偏移设计的转接区202位置，使得金球70偏移至该第一连接区201处，甚至形成在该第一连接区201的第一金属层20和第二金属层40的区域的第一表面，如此转接区202离显示区100 较近，会使得显示区100边缘的盒厚被垫高而出现Mura；本方案中，第二金属层40设置且仅设置在所述第二连接区203的栅极绝缘层30的第一表面，第一连接区201的第二金属层40蚀刻掉，使得该第一连接区201的区域总膜厚降低，如此，即使部分金球70偏移到该第一连接区201位置，也可以有足够的空间容纳该金球70，而从而减少金球70垫高显示区100边缘，避免显示区100边缘被垫高引起的Mura，有利于提升显示面板1的显示效果，提高显示面板1，特别是窄边框显示面板1的生产良率。
本申请一实施例，所述在金属材料层形成第一金属层20的步骤还包括：把第一金属层20对应第一连接区201的部位蚀刻掉。
第一金属层20位于第一连接区201处的部位蚀刻掉了，防止金球70被顶高，成盒不均匀，可能出现漏光。
其中，如果栅极绝缘层30的厚度小于等于该第一金属层20的厚度，则该透明电极层60不覆盖在栅极绝缘层30对应转接区202的侧壁；若棚极绝缘层30的厚度大于该第一金属层20的厚度，则透明电极层60覆盖在栅极绝缘层30对应转接区202的侧壁的上部。
本申请一实施例，所述第一金属层20和阵列基板的公共线通过同一道制程形成，且相互电连接。
第一金属层20和阵列基板的公共线通过同一道制程形成，不用通过打孔将电极进行连接，减少了制程。
本申请一实施例，所述第二金属层40和阵列基板的公共线通过同一道制程形成，且相互电连接。
第二金属层40和阵列基板的公共线通过同一道制程形成，不用通过打孔将电极进行连接，减少了制程。
本申请一实施例，所述阵列基板的公共线与所述第一金属层20或第二金属层40通过同一道光罩制成，所述第一金属层20和第二金属层40通过过孔电连接。
第一金属层20和第二金属层40通过过孔电连接，减少了断线带来的断路的可能；阵列基板的公共线与所述第一金属层20同层且电连接时，第二金属层40和显示区100的第二金属层40绝缘；公共线与所述第二金属层40同层且电连接时，第一金属层20和显示区100的第一金属层20绝缘，防止串扰。
本申请的面板可以是TN面板(全称为Twisted Nematic，即扭曲向列型面板)、IPS面板(In-PlaneSwitching，平面转换)、VA面板(Multi-domain Vertical Alignment，多象限垂直配向技术)，当然，也可以是其他类型的面板，适用即可。
以上内容是结合具体的可选的实施方式对本申请所作的进一步详细说明，不能认定本申请的具体实施只局限于这些说明。对于本申请所属技术领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干简单推演或替换，都应当视为属于本申请的保护范围。

Claims (17)

  1. 一种显示面板，包括：
    第一基板；
    第二基板，和所述第一基板对置；
    所述第一基板包括公共线，所述第二基板包括公共电极；
    金球，设置在所述显示面板的非显示区，导通所述第一基板的公共线和第二基板的公共电极，所述金球设置的位置为转接区；
    第一连接区，与所述转接区连接且靠近所述显示面板的显示区；
    第二连接区，位于所述转接区的外围；
    所述第一基板包括：
    衬底；
    第一金属层，覆盖在所述衬底的第一表面；
    栅极绝缘层，设置在所述第一金属层的第一表面，所述栅极绝缘层对应转接区镂空，形成栅极绝缘凹陷区；
    第二金属层，设置且仅设置在所述第二连接区的栅极绝缘层的第一表面；
    钝化层，设置在第一连接区的栅极绝缘层的第一表面，以及第二连接区的第二金属层第一表面，对应栅极绝缘凹陷区处镂空；
    透明电极层，设置在第一金属层对应转接区的位置，并至少覆盖在第一连接区的钝化层对应转接区的侧壁，以及第二连接区的栅极绝缘层、第二金属层和钝化层的侧壁；
    所述金球设置在所述透明电极层第一表面，连通所述第一基板的公共线和所述第二基板的公共电极。
  2. 如权利要求1所述的一种显示面板，其中，所述第一金属层对应所述第一连接区处镂空。
  3. 如权利要求1所述的一种显示面板，其中，所述第一金属层和第一基板的公共线通过同一道光罩制成，且电连接。
  4. 如权利要求1所述的一种显示面板，其中，所述第二金属层和第一基板的公共线通过同一道光罩制成，且电连接。
  5. 如权利要求1所述的一种显示面板，其中，所述第一基板的公共线与所述第一金属层或第二金属层通过同一道光罩制成。
  6. 如权利要求5所述的一种显示面板，其中，所述第一金属层和所述第二金属层通过过孔电连接。
  7. 如权利要求1所述的一种显示面板，其中，所述第一基板为阵列基板，所述第二基板为彩膜基板。
  8. 一种显示面板，包括：
    阵列基板；以及
    彩膜基板，所述阵列基板和所述彩膜基板相对设置；
    所述阵列基板包括公共线，所述彩膜基板包括公共电极；
    金球，设置在所述显示面板的非显示区，导通所述阵列基板的公共线和彩膜基板的公共电极，所述金球设置的位置为转接区；
    第一连接区，与所述转接区连接且靠近所述显示面板的显示区；
    第二连接区，位于所述转接区的外围；
    所述阵列基板包括：
    衬底；
    第一金属层，覆盖在所述衬底的第一表面；
    栅极绝缘层，设置在所述第一金属层的第一表面，所述栅极绝缘层对应转接区镂空，形成栅极绝缘凹陷区；
    第二金属层，设置且仅设置在所述第二连接区的栅极绝缘层的第一表面；
    钝化层，设置在第一连接区的栅极绝缘层的第一表面，以及第二连接区的第二金属层的第一表面，对应栅极绝缘凹陷区处镂空；
    透明电极层，设置在第一金属层对应转接区的位置，并至少覆盖在第一连接区的钝化层对应转接区的侧壁，以及第二连接区的栅极绝缘层、第二金属层和钝化层的侧壁；
    所述金球设置在所述透明电极层的第一表面，连通所述阵列基板的公共线和所述彩膜基板的公共电极。
  9. 一种显示面板的制程，包括：
    形成设有公共线的第一基板；以及
    形成设有公共电极的第二基板；
    在所述第一基板和第二基板之间设置金球，所述金球连通第一基板的公共线和第二基板的公共电极。
  10. 如权利要求9所述的一种显示面板的制程，其中，所述形成设有公共线的第一基板的步骤包括：
    在衬底覆盖一层金属材料层，并蚀刻金属材料层形成第一金属层和公共线；
    在第一金属层的第一表面形成栅极绝缘层，并把栅极绝缘层对应转接区的部位部分蚀刻掉形成栅极绝缘凹陷区；
    在栅极绝缘层的第一表面形成第二金属层，并把第一连接区和转接区的第二金属层蚀刻掉；
    在第一连接区的栅极绝缘层的第一表面以及第二连接区的第二金属层的第一表面形成钝化层，并把栅极绝缘层对应转接区的部分蚀刻掉；
    在第一金属层对应转接区的第一表面形成透明电极层，并使得透明电极层同时覆盖在第一连接区的钝化层、栅极绝缘层对应转接区的侧壁，以及第二连接区的钝化层、第二金属层和栅极绝缘层对应转接区的侧壁，所述透明电极层与公共线连通形成第一基板。
  11. 如权利要求10所述的一种显示面板的制程，其中，在所述第一基板和第二基板之间设置金球，所述金球连通第一基板的公共线和第二基板的公共电极的步骤中，所述金球设置在所述透明电极层的第一表面。
  12. 如权利要求9所述的一种显示面板的制程，其中，所述第一基板为阵列基板，所述第二基板为彩膜基板。
  13. 如权利要求10所述的一种显示面板的制程，其中，在衬底覆盖一层金属材料层，并蚀刻金属材料层形成第一金属层和公共线的步骤还包括：把第一金属层对应第一连接区的部位蚀刻掉。
  14. 如权利要求10所述的一种显示面板的制程，其中，第一金属层和第一基板的公共线通过同一道制程形成，且相互电连接。
  15. 如权利要求10所述的一种显示面板的制程，其中，第二金属层和第一基板的公共线通过同一道制程形成，且相互电连接。
  16. 如权利要求10所述的一种显示面板的制程，其中，第一基板的公共线与第一金属层或第二金属层通过同一道光罩制成。
  17. 如权利要求16所述的一种显示面板的制程，其中，所述第一金属层和第二金属层通过过孔电连接。
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