CN103219301B - 功率半导体模块及其制造方法 - Google Patents

功率半导体模块及其制造方法 Download PDF

Info

Publication number
CN103219301B
CN103219301B CN201210385725.8A CN201210385725A CN103219301B CN 103219301 B CN103219301 B CN 103219301B CN 201210385725 A CN201210385725 A CN 201210385725A CN 103219301 B CN103219301 B CN 103219301B
Authority
CN
China
Prior art keywords
electrode
power semiconductor
chip
electrodes
conductive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201210385725.8A
Other languages
English (en)
Chinese (zh)
Other versions
CN103219301A (zh
Inventor
碓井修
吉松直树
菊池正雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN103219301A publication Critical patent/CN103219301A/zh
Application granted granted Critical
Publication of CN103219301B publication Critical patent/CN103219301B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/77—Auxiliary members characterised by their shape
    • H10W40/778—Auxiliary members characterised by their shape in encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/811—Multiple chips on leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07336—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07351—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
    • H10W72/07354—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/076—Connecting or disconnecting of strap connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/076—Connecting or disconnecting of strap connectors
    • H10W72/07631—Techniques
    • H10W72/07636—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/341—Dispositions of die-attach connectors, e.g. layouts
    • H10W72/347—Dispositions of multiple die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H10W72/631—Shapes of strap connectors
    • H10W72/635—Shapes of strap connectors of outermost layers of multilayered strap connectors, e.g. coating not being conformal on a core
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/853—On the same surface
    • H10W72/865—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/853—On the same surface
    • H10W72/868—Die-attach connectors and strap connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/853—On the same surface
    • H10W72/871—Bond wires and strap connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/944—Dispositions of multiple bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/014—Manufacture or treatment using batch processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/761—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors
    • H10W90/763—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors between laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/761—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors
    • H10W90/766—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Inverter Devices (AREA)
CN201210385725.8A 2012-01-18 2012-10-12 功率半导体模块及其制造方法 Active CN103219301B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012008083A JP5661052B2 (ja) 2012-01-18 2012-01-18 パワー半導体モジュールおよびその製造方法
JP2012-008083 2012-01-18

Publications (2)

Publication Number Publication Date
CN103219301A CN103219301A (zh) 2013-07-24
CN103219301B true CN103219301B (zh) 2016-01-20

Family

ID=48693298

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210385725.8A Active CN103219301B (zh) 2012-01-18 2012-10-12 功率半导体模块及其制造方法

Country Status (4)

Country Link
US (1) US9059334B2 (https=)
JP (1) JP5661052B2 (https=)
CN (1) CN103219301B (https=)
DE (1) DE102012222879B4 (https=)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5542765B2 (ja) * 2011-09-26 2014-07-09 日立オートモティブシステムズ株式会社 パワーモジュール
DE102012101666B3 (de) * 2012-02-29 2013-05-16 Infineon Technologies Ag Leistungshalbleitermodulsystem mit Hinterschneidungsverbindung
JP2013232495A (ja) * 2012-04-27 2013-11-14 Mitsubishi Electric Corp 半導体装置
JP6094592B2 (ja) * 2012-10-01 2017-03-15 富士電機株式会社 半導体装置とその製造方法
JP5801339B2 (ja) * 2013-03-22 2015-10-28 株式会社東芝 半導体装置
JP5799974B2 (ja) * 2013-05-23 2015-10-28 株式会社デンソー 電子装置
JP6303623B2 (ja) * 2014-03-07 2018-04-04 富士電機株式会社 半導体装置、半導体装置の製造方法、位置決め治具
JP6407756B2 (ja) * 2014-03-31 2018-10-17 株式会社東芝 半導体モジュールの製造方法
DE102014106686B4 (de) * 2014-05-12 2022-12-01 Infineon Technologies Austria Ag Elektronisches modul, elektronisches system und verfahren zum herstellen desselben
CN106663676B (zh) * 2014-08-29 2019-05-28 三菱电机株式会社 半导体装置以及多相用半导体装置
CN106716815B (zh) * 2014-09-25 2019-03-15 日立汽车系统株式会社 电力变换装置
JP6293030B2 (ja) * 2014-10-09 2018-03-14 三菱電機株式会社 電力用半導体装置
JP6345265B2 (ja) * 2014-10-29 2018-06-20 日立オートモティブシステムズ株式会社 電子機器及び電子機器の製造方法
US10559538B2 (en) * 2015-02-25 2020-02-11 Mitsubishi Electric Corporation Power module
JP6590952B2 (ja) 2016-01-29 2019-10-16 三菱電機株式会社 半導体装置
KR101786343B1 (ko) * 2016-05-04 2017-10-18 현대자동차주식회사 양면냉각형 파워모듈
DE102016120778B4 (de) * 2016-10-31 2024-01-25 Infineon Technologies Ag Baugruppe mit vertikal beabstandeten, teilweise verkapselten Kontaktstrukturen
US10074590B1 (en) * 2017-07-02 2018-09-11 Infineon Technologies Ag Molded package with chip carrier comprising brazed electrically conductive layers
JP2019057576A (ja) 2017-09-20 2019-04-11 ルネサスエレクトロニクス株式会社 半導体装置
US10453777B2 (en) * 2018-01-30 2019-10-22 Toyota Motor Engineering & Manufacturing North America, Inc. Power electronics assemblies with cio bonding layers and double sided cooling, and vehicles incorporating the same
CN112236856A (zh) * 2018-05-29 2021-01-15 Apex微电子科技有限公司 导热电子封装
JP7010167B2 (ja) * 2018-07-25 2022-01-26 株式会社デンソー 半導体装置
WO2020100899A1 (ja) * 2018-11-14 2020-05-22 株式会社村田製作所 電子部品及びそれを備える電子部品モジュール
JP7155990B2 (ja) * 2018-12-17 2022-10-19 株式会社デンソー 半導体モジュール
US11682606B2 (en) * 2019-02-07 2023-06-20 Ford Global Technologies, Llc Semiconductor with integrated electrically conductive cooling channels
JP7059970B2 (ja) * 2019-03-11 2022-04-26 株式会社デンソー 半導体装置
JP7195208B2 (ja) * 2019-04-12 2022-12-23 三菱電機株式会社 半導体装置および半導体装置の製造方法
CN110335864B (zh) * 2019-06-22 2025-04-04 深圳市奕通功率电子有限公司 一种功率模组
EP3790047B1 (en) * 2019-09-05 2022-03-02 Infineon Technologies AG Multi-chip-package
JP2021057534A (ja) * 2019-10-01 2021-04-08 株式会社デンソー 半導体装置
US20220415763A1 (en) * 2019-11-29 2022-12-29 Ampleon Netherlands B.V. Lead Frame Based Molded Radio Frequency Package
EP3869923B1 (en) * 2020-02-20 2025-01-08 AT & S Austria Technologie & Systemtechnik Aktiengesellschaft Cooling profile integration for embedded power systems
US11721617B2 (en) 2020-04-07 2023-08-08 Wolfspeed, Inc. Power module
US11735488B2 (en) * 2020-04-07 2023-08-22 Wolfspeed, Inc. Power module
US11373941B2 (en) * 2020-10-12 2022-06-28 Renesas Electronics Corporation Sense MOSFET electrically connected to a source pad via a plurality of source extraction ports
JP7563295B2 (ja) * 2021-05-27 2024-10-08 株式会社デンソー 半導体装置
JP7552503B2 (ja) * 2021-05-27 2024-09-18 株式会社デンソー 半導体装置
WO2023047881A1 (ja) * 2021-09-21 2023-03-30 株式会社デンソー 半導体装置およびその製造方法
JP7638193B2 (ja) * 2021-10-26 2025-03-03 三菱電機株式会社 半導体装置および電力変換装置
EP4231345A1 (en) * 2022-02-22 2023-08-23 Infineon Technologies Austria AG Power semiconductor device
DE102022207270A1 (de) * 2022-07-18 2024-01-18 Zf Friedrichshafen Ag Verfahren und Vorrichtung zum Herstellen einer Anschlussvorrichtung zum Anschließen zumindest eines elektrischen oder elektronischen Bauteils für ein elektrisches oder elektronisches Modul
DE102022207269A1 (de) * 2022-07-18 2024-01-18 Zf Friedrichshafen Ag Verfahren und Vorrichtung zum Herstellen einer Anschlussvorrichtung zum Anschließen zumindest eines elektrischen oder elektronischen Bauteils für ein elektrisches oder elektronisches Modul
JP7784974B2 (ja) * 2022-09-08 2025-12-12 三菱電機株式会社 半導体装置の製造方法
JP7838443B2 (ja) * 2022-10-12 2026-04-01 株式会社デンソー 半導体装置
KR20240149253A (ko) * 2023-04-05 2024-10-14 주식회사 엘엑스세미콘 전력반도체 모듈과 이를 포함하는 전력변환 장치 및 전력반도체 모듈의 제조방법

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6448645B1 (en) * 1998-10-16 2002-09-10 Denso Corporation Semiconductor device
US6703707B1 (en) * 1999-11-24 2004-03-09 Denso Corporation Semiconductor device having radiation structure
CN1790692A (zh) * 2004-11-01 2006-06-21 三菱电机株式会社 半导体装置及其制造方法
CN1992259A (zh) * 2005-12-26 2007-07-04 株式会社电装 具有半导体元件、绝缘基板和金属电极的半导体器件
CN101136396A (zh) * 2006-08-30 2008-03-05 株式会社电装 包括两片带有多个半导体芯片和电子元件的衬底的功率电子封装件
CN102270615A (zh) * 2010-06-01 2011-12-07 三菱电机株式会社 功率半导体装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3879150B2 (ja) * 1996-08-12 2007-02-07 株式会社デンソー 半導体装置
US6693350B2 (en) * 1999-11-24 2004-02-17 Denso Corporation Semiconductor device having radiation structure and method for manufacturing semiconductor device having radiation structure
JP4044265B2 (ja) * 2000-05-16 2008-02-06 三菱電機株式会社 パワーモジュール
JP2007184525A (ja) * 2005-12-07 2007-07-19 Mitsubishi Electric Corp 電子機器装置
JP2007251076A (ja) * 2006-03-20 2007-09-27 Hitachi Ltd パワー半導体モジュール
JP2007311518A (ja) * 2006-05-18 2007-11-29 Mitsubishi Electric Corp 半導体装置の製造方法及び半導体装置
JP2008041752A (ja) 2006-08-02 2008-02-21 Hitachi Metals Ltd 半導体モジュールおよび半導体モジュール用放熱板
US7999369B2 (en) * 2006-08-29 2011-08-16 Denso Corporation Power electronic package having two substrates with multiple semiconductor chips and electronic components
JP5076440B2 (ja) 2006-10-16 2012-11-21 富士電機株式会社 半導体装置及び半導体装置の製造方法
JP4748173B2 (ja) * 2008-03-04 2011-08-17 株式会社デンソー 半導体モジュール及びその製造方法
JP2009224560A (ja) 2008-03-17 2009-10-01 Denso Corp 半導体装置およびその製造方法
JP2010239033A (ja) 2009-03-31 2010-10-21 Honda Motor Co Ltd 半導体装置及びその製造方法
JP2011216564A (ja) * 2010-03-31 2011-10-27 Mitsubishi Electric Corp パワーモジュール及びその製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6448645B1 (en) * 1998-10-16 2002-09-10 Denso Corporation Semiconductor device
US6703707B1 (en) * 1999-11-24 2004-03-09 Denso Corporation Semiconductor device having radiation structure
CN1790692A (zh) * 2004-11-01 2006-06-21 三菱电机株式会社 半导体装置及其制造方法
CN1992259A (zh) * 2005-12-26 2007-07-04 株式会社电装 具有半导体元件、绝缘基板和金属电极的半导体器件
CN101136396A (zh) * 2006-08-30 2008-03-05 株式会社电装 包括两片带有多个半导体芯片和电子元件的衬底的功率电子封装件
CN102270615A (zh) * 2010-06-01 2011-12-07 三菱电机株式会社 功率半导体装置

Also Published As

Publication number Publication date
US9059334B2 (en) 2015-06-16
DE102012222879A1 (de) 2013-07-18
CN103219301A (zh) 2013-07-24
JP2013149730A (ja) 2013-08-01
DE102012222879B4 (de) 2023-05-04
JP5661052B2 (ja) 2015-01-28
US20130181228A1 (en) 2013-07-18

Similar Documents

Publication Publication Date Title
CN103219301B (zh) 功率半导体模块及其制造方法
JP6338937B2 (ja) パワーモジュールおよびその製造方法
CN107112294B (zh) 半导体装置以及功率模块
CN105518841B (zh) 具有共同围绕焊料黏结物以防止焊料散布的凹槽的半导体装置
JP5232367B2 (ja) 半導体装置
US9312211B2 (en) Semiconductor device and manufacturing method thereof
US11251112B2 (en) Dual side cooling power module and manufacturing method of the same
JP6097013B2 (ja) パワーモジュール半導体装置
US11728251B2 (en) Semiconductor power module with temperature sensors and shaped top plate to equalize current paths
CN110783283B (zh) 具有对称布置的功率连接端的半导体封装及其制造方法
EP3522213B1 (en) Semiconductor device
CN107924893A (zh) 功率模块、功率模块的散热构造、以及功率模块的接合方法
US10903138B2 (en) Semiconductor device and method of manufacturing the same
JP2019046899A (ja) 電子装置
WO2020241472A1 (ja) 半導体装置、および半導体装置の製造方法
JP3245176U (ja) パワーモジュールおよびパワーモジュールの製造方法
US10566295B2 (en) Semiconductor device
US20240096730A1 (en) Semiconductor Module Having Double Sided Heat Dissipation Structure and Method for Fabricating the Same
JP2017054842A (ja) 配線基板、半導体装置、及び半導体パッケージ
JP2013062282A (ja) 半導体装置
WO2018047485A1 (ja) パワーモジュールおよびインバータ装置
US20250112143A1 (en) Semiconductor device, semiconductor module and manufacturing method
US11276627B2 (en) Semiconductor device
JP7070070B2 (ja) 半導体装置
CN120239302A (zh) 半导体器件以及半导体器件的制造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant