JP5661052B2 - パワー半導体モジュールおよびその製造方法 - Google Patents

パワー半導体モジュールおよびその製造方法 Download PDF

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JP5661052B2
JP5661052B2 JP2012008083A JP2012008083A JP5661052B2 JP 5661052 B2 JP5661052 B2 JP 5661052B2 JP 2012008083 A JP2012008083 A JP 2012008083A JP 2012008083 A JP2012008083 A JP 2012008083A JP 5661052 B2 JP5661052 B2 JP 5661052B2
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electrodes
power semiconductor
semiconductor module
electrode
chip
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JP2013149730A5 (https=
JP2013149730A (ja
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修 碓井
修 碓井
吉松　直樹
直樹 吉松
菊池　正雄
正雄 菊池
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2012008083A priority Critical patent/JP5661052B2/ja
Priority to US13/617,048 priority patent/US9059334B2/en
Priority to CN201210385725.8A priority patent/CN103219301B/zh
Priority to DE102012222879.9A priority patent/DE102012222879B4/de
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    • H10W90/766—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
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JP2012008083A 2012-01-18 2012-01-18 パワー半導体モジュールおよびその製造方法 Active JP5661052B2 (ja)

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JP2012008083A JP5661052B2 (ja) 2012-01-18 2012-01-18 パワー半導体モジュールおよびその製造方法
US13/617,048 US9059334B2 (en) 2012-01-18 2012-09-14 Power semiconductor module and method of manufacturing the same
CN201210385725.8A CN103219301B (zh) 2012-01-18 2012-10-12 功率半导体模块及其制造方法
DE102012222879.9A DE102012222879B4 (de) 2012-01-18 2012-12-12 Leistungshalbleitermodul und Verfahren zu seiner Herstellung

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JP2012008083A JP5661052B2 (ja) 2012-01-18 2012-01-18 パワー半導体モジュールおよびその製造方法

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JP2013149730A JP2013149730A (ja) 2013-08-01
JP2013149730A5 JP2013149730A5 (https=) 2014-07-03
JP5661052B2 true JP5661052B2 (ja) 2015-01-28

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DE (1) DE102012222879B4 (https=)

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