CN102403256A - 赝埋层及制造方法、深孔接触及三极管 - Google Patents

赝埋层及制造方法、深孔接触及三极管 Download PDF

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CN102403256A
CN102403256A CN2010102755328A CN201010275532A CN102403256A CN 102403256 A CN102403256 A CN 102403256A CN 2010102755328 A CN2010102755328 A CN 2010102755328A CN 201010275532 A CN201010275532 A CN 201010275532A CN 102403256 A CN102403256 A CN 102403256A
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刘冬华
钱文生
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Shanghai Huahong Grace Semiconductor Manufacturing Corp
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Abstract

本发明公开了一种赝埋层的制造方法，包括如下步骤：在硅衬底上刻蚀形成有源区和浅沟槽；在浅沟槽底部表面进行磷离子注入形成磷杂质区；在所述浅沟槽底部表面进行砷离子注入形成砷杂质区；进行热退火。本发明还公开了一种赝埋层。本发明还公开一种深孔接触；本发明还公开一种三极管。本发明方法的赝埋层注入通过采用具有快速热扩散特性的磷注入和具有慢速热扩散特性的砷注入，能提高赝埋层表面的杂质浓度、能减少赝埋层的方块电阻、能使赝埋层和深孔接触形成良好的欧姆接触并减少接触电阻，还能提高三极管器件的频率特性和电流输出能力。

Description

赝埋层及制造方法、深孔接触及三极管
技术领域
本发明涉及半导体集成电路制造领域，特别是涉及一种锗硅双极CMOS工艺中的赝埋层的制造方法；本发明还涉及一种赝埋层；本发明还涉及一种深孔接触；本发明还涉及一种三极管。
背景技术
在锗硅双极CMOS(SiGe BiCMOS)工艺中采用深孔接触工艺和赝埋层(Pseudo Buried Layer)，能使得器件具有面积小、成本低等特点。如图1所示，为现有N型赝埋层的结构示意图。在硅衬底上形成有浅沟槽隔离(STI)和有源区，所述浅沟槽隔离也即为浅沟槽场氧是通过在硅衬底上刻蚀出浅沟槽并填入氧化硅形成；现有N型赝埋层由形成于所述浅沟槽隔离的底部硅衬底中磷杂质区组成，所述磷杂质区通过在所述浅沟槽底部进行磷离子注入并进行热退火形成。通过热退火，所述磷杂质区横向和纵向扩散进入所述有源区和远离所述浅沟槽底部表面的硅衬底中。
现有深孔接触是通过在现有赝埋层顶部的浅沟槽场氧即所述浅沟槽隔离中开一深孔并在所述深孔中淀积钛/氮化钛阻挡金属层后、再填入钨形成。现有深孔接触的特点的金属是直接与所述浅沟槽底部的硅即赝埋层接触，无法引入金属硅化物工艺。同时现有锗硅双极CMOS(SiGe BiCMOS)工艺中，为了满足异质结双极晶体管(HBT，hetero junction bipolartransistor)的性能需求，现有N型赝埋层必须要具有一定量的横向和纵向扩散，因此现有N型赝埋层的注入杂质必须使用具有快速横向扩散特性的磷。由于现有N型赝埋层的注入发生在工艺流程的开始阶段，基本上承受了所有的热过程，这样虽然达到了现有N型赝埋层的横向扩散的要求，但也造成了现有N型赝埋层表面的杂质浓度过低，从而使得现有N型赝埋层与深接触孔的接触电阻过大，某些情况下甚至无法形成有效的欧姆接触；浓度的降低也会造成现有N型赝埋层本身的方块电阻增加。
发明内容
本发明所要解决的技术问题是提供一种赝埋层的制造方法，能提高赝埋层表面的杂质浓度、能减少赝埋层的方块电阻、能使赝埋层和深孔接触形成良好的欧姆接触并减少接触电阻；为此，本发明还提供一种赝埋层；本发明还提供一种深孔接触；本发明还提供一种三极管，能提高器件的频率特性和电流输出能力。
为解决上述技术问题，本发明提供的赝埋层的制造方法包括如下步骤：
步骤一、在硅衬底上刻蚀形成有源区和浅沟槽。
步骤二、在所述浅沟槽底部表面进行磷离子注入形成磷杂质区。所述磷离子注入的注入剂量为1e14cm-2～1e16cm-2、注入能量为3keV～30keV。
步骤三、在所述浅沟槽底部表面进行砷离子注入形成砷杂质区。所述砷离子注入的注入剂量为1e15cm-2～1e16cm-2、注入能量为5keV～30keV。
步骤四、对所述磷杂质区和砷杂质区进行热退火。由于磷离子具有快速热扩散特性，而砷离子具有慢速热扩散特性，热退火过程中所述磷离子扩散速率会远大于所述砷离子的扩散速率，热退火后，所述磷杂质区的区域范围大于所述砷杂质区的区域范围，所述砷杂质区保留在所述浅沟槽底部表面处，所述磷杂质区横向和纵向扩散进入所述有源区和远离所述浅沟槽底部表面的硅衬底中，且所述砷杂质区的浓度大于所述磷杂区的浓度。
为解决上述技术问题，本发明提供一种赝埋层，所述赝埋层形成于浅沟槽底部的硅衬底中，包括一磷杂质区和一砷杂质区。所述磷杂质区的区域范围大于所述砷杂质区的区域范围，所述砷杂质区处于所述浅沟槽底部表面处，所述磷杂质区横向和纵向扩散进入所述有源区和远离所述浅沟槽底部表面的硅衬底中，且所述砷杂质区的浓度大于所述磷杂区的浓度。所述磷杂质区通过在所述浅沟槽底部进行磷离子注入并进行热退火形成，所述砷杂质区通过在所述浅沟槽底部进行砷离子注入并进行热退火形成。所述磷杂质离子注入的注入剂量为1e14cm-2～1e16cm-2、注入能量为3keV～30keV；所述砷杂质离子注入的注入剂量为1e15cm-2～1e16cm-2、注入能量为5keV～30keV。
为解决上述技术问题，本发明提供一种深孔接触，所述深孔接触由形成于赝埋层顶部的浅沟槽场氧的深孔中并和所述赝埋层相接触的金属组成，所述深孔接触的金属包括形成于所述深孔内壁和底部的钛/氮化钛阻挡金属层、以及形成于所述钛/氮化钛阻挡金属层上并填满所述深孔的钨。所述赝埋层形成于浅沟槽底部的硅衬底中，所述赝埋层包括一磷杂质区和一砷杂质区；所述磷杂质区的区域范围大于所述砷杂质区的区域范围，所述砷杂质区处于所述浅沟槽底部表面处，所述磷杂质区横向和纵向扩散进入所述有源区和远离所述浅沟槽底部表面的硅衬底中，且所述砷杂质区的浓度大于所述磷杂区的浓度；所述深孔接触的金属和所述砷杂质区形成欧姆接触。所述磷杂质区通过在所述浅沟槽底部进行磷离子注入并进行热退火形成，所述砷杂质区通过在所述浅沟槽底部进行砷离子注入并进行热退火形成。所述磷杂质离子注入的注入剂量为1e14cm-2～1e16cm-2、注入能量为3keV～30keV；所述砷杂质离子注入的注入剂量为1e15cm-2～1e16cm-2、注入能量为5keV～30keV。
为解决上述技术问题，本发明提供一种三极管，所述三极管的N型区形成于硅衬底上的有源区中，所述N型区和一赝埋层相连并通过一深孔接触引出。所述赝埋层形成于和所述有源区相邻的浅沟槽底部的硅衬底中，所述赝埋层包括一磷杂质区和一砷杂质区。所述磷杂质区的区域范围大于所述砷杂质区的区域范围，所述砷杂质区处于所述浅沟槽底部表面处，所述磷杂质区横向和纵向扩散进入所述有源区和远离所述浅沟槽底部表面的硅衬底中，且所述砷杂质区的浓度大于所述磷杂区的浓度。所述N型区和所述磷杂质区相连接。所述深孔接触由形成于所述赝埋层顶部的浅沟槽场氧的深孔中并和所述赝埋层相接触的金属组成；所述深孔接触的金属和所述砷杂质区形成欧姆接触。所述磷杂质区通过在所述浅沟槽底部进行磷离子注入并进行热退火形成，所述砷杂质区通过在所述浅沟槽底部进行砷离子注入并进行热退火形成。所述磷杂质离子注入的注入剂量为1e14cm-2～1e16cm-2、注入能量为3keV～30keV；所述砷杂质离子注入的注入剂量为1e15cm-2～1e16cm-2、注入能量为5keV～30keV。
其中，所述三极管能为锗硅NPN异质结三极管，所述NPN锗硅异质结三极管的集电区为所述N型区。或者，所述三极管为锗硅工艺中的寄生PNP三极管，所述锗硅工艺中的寄生PNP三极管的基区为所述N型区。
本发明赝埋层的制造方法能提高赝埋层表面的杂质浓度、能减少赝埋层的方块电阻、能使赝埋层和深孔接触形成良好的欧姆接触并减少接触电阻。本发明三极管能保证在器件的电流增益系数不受影响的条件下，提高器件的频率特性和改善器件的电流输出能力，也能提高器件的功率增益。
附图说明
下面结合附图和具体实施方式对本发明作进一步详细的说明：
图1是现有N型赝埋层的结构示意图；
图2-图4是本发明实施例赝埋层的制造方法中的器件结构示意图；
图5是本发明实施例三极管的器件结构示意图；
图6是现有N型赝埋层和本发明赝埋层的杂质分布图。
具体实施方式
如图2至图4所示，是本发明实施例赝埋层的制造方法中的器件结构示意图。本发明实施例赝埋层的制造方法包括如下步骤：
步骤一、如图2所示，在硅衬底101上刻蚀形成有源区和浅沟槽。在所述有源区表面形成第一层氧化硅层102、第二层氮化硅层103、第三层氧化硅层104；同时在所述浅沟槽侧壁和底部分布形成侧壁氧化硅层105和底部氧化硅层106。各氧化硅层和氮化硅层用以在后续的浅沟槽底部的离子注入时作为所述有源区的保护层，防止离子注入到所述有源区中。
步骤二、如图2所示，在所述浅沟槽底部表面进行磷离子注入形成磷杂质区301。所述磷离子注入的注入剂量为1e14cm-2～1e16cm-2、注入能量为3keV～30keV。
步骤三、如图3所示，在所述浅沟槽底部表面进行砷离子注入形成砷杂质区302。所述砷离子注入的注入剂量为1e15cm-2～1e16cm-2、注入能量为5keV～30keV。如图4所示，去除所述有源区表面的第一层氧化硅层102、第二层氮化硅层103、第三层氧化硅层104和所述浅沟槽表面的侧壁氧化硅层105和底部氧化硅层106。
步骤四、如图4所示，在所述浅沟槽中填入氧化硅形成浅沟槽场氧也即浅沟槽隔离303。对所述磷杂质区301和砷杂质区302进行热退火。所述热退火可以单独进行，也可以利用后续工艺中本身的热过程进行。由于磷离子具有快速热扩散特性，而砷离子具有慢速热扩散特性，热退火过程中所述磷离子扩散速率会远大于所述砷离子的扩散速率，热退火后，所述磷杂质区301的区域范围大于所述砷杂质区302的区域范围，所述砷杂质区302保留在所述浅沟槽底部表面处，所述磷杂质区301横向和纵向扩散进入所述有源区和远离所述浅沟槽底部表面的硅衬底101中，且所述砷杂质区301的浓度大于所述磷杂区302的浓度。
经过上述步骤后最后形成本发明实施例赝埋层。
如图5所示，是本发明实施例三极管的器件结构示意图。本发明实施例三极管为为锗硅NPN异质结三极管。在上述四个步骤的基础上，采用现有的锗硅双极CMOS工艺流程能够形成如图5所示的锗硅NPN异质结三极管。本发明实施例三极管的集电区401形成于所述有源区中，所述集电区401和扩散进入所述有源区中的所述磷杂质区302形成接触连接。所述集电区401通过和所述赝埋层相连接的深孔接触408引出。所述深孔接触408由形成于所述赝埋层顶部的浅沟槽场氧即所述浅沟槽隔离303的深孔中并和所述赝埋层相接触的金属组成。所述深孔接触408的金属和所述砷杂质区302形成欧姆接触。所述深孔接触408的金属包括形成于所述深孔内壁和底部的钛/氮化钛阻挡金属层、以及形成于所述钛/氮化钛阻挡金属层上并填满所述深孔的钨。
如图5所示，本发明实施例三极管还包括一基区403和一发射区406。所述基区403由形成于所述有源区上的P型外延层组成，所述基区403和所述集电区401形成接触。所述基区403还和外基区404相连，通过金属接触409和所述外基区404相连引出所述基区403，所述外基区404和所述浅沟槽隔离303间隔有基区隔离场氧402。所述发射区406由形成在所述基区403上的N型多晶硅组成。所述发射区406和所述基区403形成接触。所述发射区406的上部区域往外延伸，所述发射区406的延伸部分和所述基区403间通过所述发射极多晶硅隔离氧化物405进行隔离。所述发射区406通过金属接触409引出。各金属接触409、深孔接触408最后和金属连线410相连实现器件的互连。
如图6所示，是现有N型赝埋层和本发明赝埋层的杂质分布图。图6中的横坐标表示所述赝埋层的纵向深度坐标，即从所述浅沟槽隔离底部表面处开始向所述硅衬底底面方向的纵向深度坐标，其中0.35微米表示所述浅沟槽隔离底部表面处的深度坐标。图6中的纵坐标为杂质浓度，所述杂质浓度表示所述赝埋层的各位置处的杂质浓度。如图6可知，本发明赝埋层的在处于所述浅沟槽隔离底部表面位置处的浓度得到了大幅度的提高。这个高浓度对于减小赝埋层本身的方块电阻和使其与深接触孔形成良好的欧姆接触提供良好的工艺保证。
以上通过具体实施例对本发明进行了详细的说明，但这些并非构成对本发明的限制。在不脱离本发明原理的情况下，本领域的技术人员还可做出许多变形和改进，这些也应视为本发明的保护范围。

Claims (15)

1.一种赝埋层的制造方法，其特征在于，包括如下步骤：
步骤一、在硅衬底上刻蚀形成有源区和浅沟槽；
步骤二、在所述浅沟槽底部表面进行磷离子注入形成磷杂质区；
步骤三、在所述浅沟槽底部表面进行砷离子注入形成砷杂质区；
步骤四、对所述磷杂质区和砷杂质区进行热退火。
2.如权利要求1所述的方法，其特征在于：步骤二中所述磷离子注入的注入剂量为1e14cm-2～1e16cm-2、注入能量为3keV～30keV；步骤三中所述砷离子注入的注入剂量为1e15cm-2～1e16cm-2、注入能量为5keV～30keV。
3.如权利要求1所述的方法，其特征在于：步骤四的热退火过程中所述磷离子扩散速率大于所述砷离子的扩散速率，热退火后，所述磷杂质区的区域范围大于所述砷杂质区的区域范围，所述砷杂质区保留在所述浅沟槽底部表面处，所述磷杂质区横向和纵向扩散进入所述有源区和远离所述浅沟槽底部表面的硅衬底中，且所述砷杂质区的浓度大于所述磷杂区的浓度。
4.一种赝埋层，其特征在于：形成于浅沟槽底部的硅衬底中，所述赝埋层包括一磷杂质区和一砷杂质区；所述磷杂质区的区域范围大于所述砷杂质区的区域范围，所述砷杂质区处于所述浅沟槽底部表面处，所述磷杂质区横向和纵向扩散进入所述有源区和远离所述浅沟槽底部表面的硅衬底中，且所述砷杂质区的浓度大于所述磷杂区的浓度。
5.如权利要求4所述的赝埋层，其特征在于：所述磷杂质区通过在所述浅沟槽底部进行磷离子注入并进行热退火形成，所述砷杂质区通过在所述浅沟槽底部进行砷离子注入并进行热退火形成。
6.如权利要求5所述的赝埋层，其特征在于：所述磷杂质离子注入的注入剂量为1e14cm-2～1e16cm-2、注入能量为3keV～30keV；所述砷杂质离子注入的注入剂量为1e15cm-2～1e16cm-2、注入能量为5keV～30keV。
7.一种深孔接触，其特征在于：所述深孔接触由形成于赝埋层顶部的浅沟槽场氧的深孔中并和所述赝埋层相接触的金属组成；所述赝埋层形成于浅沟槽底部的硅衬底中，所述赝埋层包括一磷杂质区和一砷杂质区；所述磷杂质区的区域范围大于所述砷杂质区的区域范围，所述砷杂质区处于所述浅沟槽底部表面处，所述磷杂质区横向和纵向扩散进入所述有源区和远离所述浅沟槽底部表面的硅衬底中，且所述砷杂质区的浓度大于所述磷杂区的浓度；所述深孔接触的金属和所述砷杂质区形成欧姆接触。
8.如权利要求7所述的赝埋层，其特征在于：所述磷杂质区通过在所述浅沟槽底部进行磷离子注入并进行热退火形成，所述砷杂质区通过在所述浅沟槽底部进行砷离子注入并进行热退火形成。
9.如权利要求8所述的赝埋层，其特征在于：所述磷杂质离子注入的注入剂量为1e14cm-2～1e16cm-2、注入能量为3keV～30keV；所述砷杂质离子注入的注入剂量为1e15cm-2～1e16cm-2、注入能量为5keV～30keV。
10.如权利要求7所述的赝埋层，其特征在于：所述深孔接触的金属包括形成于所述深孔内壁和底部的钛/氮化钛阻挡金属层、以及形成于所述钛/氮化钛阻挡金属层上并填满所述深孔的钨。
11.一种三极管，其特征在于：所述三极管的N型区形成于硅衬底上的有源区中，所述N型区和一赝埋层相连并通过一深孔接触引出；所述赝埋层形成于和所述有源区相邻的浅沟槽底部的硅衬底中，所述赝埋层包括一磷杂质区和一砷杂质区；所述磷杂质区的区域范围大于所述砷杂质区的区域范围，所述砷杂质区处于所述浅沟槽底部表面处，所述磷杂质区横向和纵向扩散进入所述有源区和远离所述浅沟槽底部表面的硅衬底中，且所述砷杂质区的浓度大于所述磷杂区的浓度；所述N型区和所述磷杂质区相连接；所述深孔接触由形成于所述赝埋层顶部的浅沟槽场氧的深孔中并和所述赝埋层相接触的金属组成；所述深孔接触的金属和所述砷杂质区形成欧姆接触。
12.如权利要求11所述的赝埋层，其特征在于：所述磷杂质区通过在所述浅沟槽底部进行磷离子注入并进行热退火形成，所述砷杂质区通过在所述浅沟槽底部进行砷离子注入并进行热退火形成。
13.如权利要求12所述的赝埋层，其特征在于：所述磷杂质离子注入的注入剂量为1e14cm-2～1e16cm-2、注入能量为3keV～30keV；所述砷杂质离子注入的注入剂量为1e15cm-2～1e16cm-2、注入能量为5keV～30keV。
14.如权利要求11所述的三极管，其特征在于：所述三极管为锗硅NPN异质结三极管，所述NPN锗硅异质结三极管的集电区为所述N型区。
15.如权利要求11所述的三极管，其特征在于：所述三极管为锗硅工艺中的寄生PNP三极管，所述寄生PNP三极管的基区为所述N型区。
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