DE10260613B8 - Verfahren zum Herstellen eines Feldeffekttransistors - Google Patents

Verfahren zum Herstellen eines Feldeffekttransistors Download PDF

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Publication number
DE10260613B8
DE10260613B8 DE10260613A DE10260613A DE10260613B8 DE 10260613 B8 DE10260613 B8 DE 10260613B8 DE 10260613 A DE10260613 A DE 10260613A DE 10260613 A DE10260613 A DE 10260613A DE 10260613 B8 DE10260613 B8 DE 10260613B8
Authority
DE
Germany
Prior art keywords
producing
field effect
effect transistor
transistor
field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE10260613A
Other languages
English (en)
Other versions
DE10260613A1 (de
DE10260613B4 (de
Inventor
Karsten Wieczorek
Manfred Horstmann
Thomas Feudel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Priority to DE10260613A priority Critical patent/DE10260613B8/de
Priority to US10/462,893 priority patent/US6806153B2/en
Publication of DE10260613A1 publication Critical patent/DE10260613A1/de
Publication of DE10260613B4 publication Critical patent/DE10260613B4/de
Application granted granted Critical
Publication of DE10260613B8 publication Critical patent/DE10260613B8/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02634—Homoepitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
DE10260613A 2002-12-23 2002-12-23 Verfahren zum Herstellen eines Feldeffekttransistors Expired - Lifetime DE10260613B8 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE10260613A DE10260613B8 (de) 2002-12-23 2002-12-23 Verfahren zum Herstellen eines Feldeffekttransistors
US10/462,893 US6806153B2 (en) 2002-12-23 2003-06-17 Method of manufacturing a field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10260613A DE10260613B8 (de) 2002-12-23 2002-12-23 Verfahren zum Herstellen eines Feldeffekttransistors

Publications (3)

Publication Number Publication Date
DE10260613A1 DE10260613A1 (de) 2004-07-15
DE10260613B4 DE10260613B4 (de) 2009-11-26
DE10260613B8 true DE10260613B8 (de) 2010-03-04

Family

ID=32519310

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10260613A Expired - Lifetime DE10260613B8 (de) 2002-12-23 2002-12-23 Verfahren zum Herstellen eines Feldeffekttransistors

Country Status (2)

Country Link
US (1) US6806153B2 (de)
DE (1) DE10260613B8 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2847383B1 (fr) * 2002-11-14 2005-04-15 St Microelectronics Sa Procede de fabrication d'un transistor mos de longueur de grille reduite, et circuit integre comportant un tel transistor
JP2005033098A (ja) * 2003-03-05 2005-02-03 Nec Electronics Corp 半導体装置及びその製造方法
US6893909B2 (en) * 2003-10-07 2005-05-17 United Microelectronics Corp. Method of manufacturing metal-oxide-semiconductor transistor
EP1524684B1 (de) * 2003-10-17 2010-01-13 Imec Verfahren zur Herstellung eines Halbleitersubstrats mit einer Schichtstruktur von aktivierten Dotierungsstoffen
DE102005043913B4 (de) * 2004-09-22 2011-06-30 Infineon Technologies AG, 81669 Verfahren zur Herstellung einer dotierten Zone in einem Halbleiterkörper
DE102005057074B4 (de) * 2005-11-30 2009-07-23 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Reduzieren von Kristalldefekten in verformten Transistoren durch eine geneigte Voramorphisierung
DE102006009272B4 (de) * 2006-02-28 2013-01-03 Globalfoundries Inc. Verfahren zur Herstellung eines verspannten Transistors durch eine späte Amorphisierung und durch zu entfernende Abstandshalter
DE102007020261B4 (de) * 2007-04-30 2009-07-16 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Erhöhung der Dotierstoffaktivierung unter Anwendung mehrerer sequenzieller fortschrittlicher Laser/Blitzlicht-Ausheizprozesse
DE102007025326B4 (de) * 2007-05-31 2011-01-20 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Ausbilden einer Halbleiterstruktur, das eine Implantation von Ionen in eine zu ätzende Materialschicht umfasst
CN102403256B (zh) * 2010-09-08 2014-02-26 上海华虹宏力半导体制造有限公司 赝埋层及制造方法、深孔接触及三极管
DE102016104327B4 (de) * 2016-03-09 2023-12-28 Infineon Technologies Austria Ag Verfahren zum Herstellen einer Halbleitervorrichtung

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0201585B1 (de) * 1984-11-26 1990-01-10 Hughes Aircraft Company Halbleiter mit flachen, hyperabrupt dotierten gebieten und verfahren zu ihrer herstellung unter verwendung ionenimplantierter störstoffe
JPH03157941A (ja) * 1989-11-16 1991-07-05 Sony Corp Ｍｉｓ型半導体装置の製法
DE4035842A1 (de) * 1990-11-10 1992-05-14 Telefunken Electronic Gmbh Verfahren zur rekristallisierung voramorphisierter halbleiteroberflaechenzonen
US5885886A (en) * 1996-12-26 1999-03-23 Lg Semicon Co., Ltd. Method for manufacturing semiconductor device
WO2001080300A1 (en) * 2000-04-12 2001-10-25 Ultratech Stepper, Inc. High-speed semiconductor transistor and selective absorption process for forming same
US6362063B1 (en) * 1999-01-06 2002-03-26 Advanced Micro Devices, Inc. Formation of low thermal budget shallow abrupt junctions for semiconductor devices

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4177084A (en) * 1978-06-09 1979-12-04 Hewlett-Packard Company Method for producing a low defect layer of silicon-on-sapphire wafer
EP0812009A3 (de) * 1996-06-03 1998-01-07 Texas Instruments Incorporated Verbesserungen in der oder in Bezug auf die Halbleiterherstellung

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0201585B1 (de) * 1984-11-26 1990-01-10 Hughes Aircraft Company Halbleiter mit flachen, hyperabrupt dotierten gebieten und verfahren zu ihrer herstellung unter verwendung ionenimplantierter störstoffe
JPH03157941A (ja) * 1989-11-16 1991-07-05 Sony Corp Ｍｉｓ型半導体装置の製法
DE4035842A1 (de) * 1990-11-10 1992-05-14 Telefunken Electronic Gmbh Verfahren zur rekristallisierung voramorphisierter halbleiteroberflaechenzonen
US5885886A (en) * 1996-12-26 1999-03-23 Lg Semicon Co., Ltd. Method for manufacturing semiconductor device
US6362063B1 (en) * 1999-01-06 2002-03-26 Advanced Micro Devices, Inc. Formation of low thermal budget shallow abrupt junctions for semiconductor devices
WO2001080300A1 (en) * 2000-04-12 2001-10-25 Ultratech Stepper, Inc. High-speed semiconductor transistor and selective absorption process for forming same

Also Published As

Publication number Publication date
DE10260613A1 (de) 2004-07-15
US20040121565A1 (en) 2004-06-24
DE10260613B4 (de) 2009-11-26
US6806153B2 (en) 2004-10-19

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