CN102365713A - 增强光和/或激光烧结的缓冲层 - Google Patents

增强光和/或激光烧结的缓冲层 Download PDF

Info

Publication number
CN102365713A
CN102365713A CN2010800158424A CN201080015842A CN102365713A CN 102365713 A CN102365713 A CN 102365713A CN 2010800158424 A CN2010800158424 A CN 2010800158424A CN 201080015842 A CN201080015842 A CN 201080015842A CN 102365713 A CN102365713 A CN 102365713A
Authority
CN
China
Prior art keywords
thermal conductivity
sintering
substrate
material layer
polyimides
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN2010800158424A
Other languages
English (en)
Other versions
CN102365713B (zh
Inventor
Z·雅尼弗
M·杨
P·B·莱克斯顿
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ishihara Chemical Co Ltd
Original Assignee
Applied Nanotech Holdings Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Nanotech Holdings Inc filed Critical Applied Nanotech Holdings Inc
Publication of CN102365713A publication Critical patent/CN102365713A/zh
Application granted granted Critical
Publication of CN102365713B publication Critical patent/CN102365713B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/10—Sintering only
    • B22F3/105—Sintering only by using electric current other than for infrared radiant energy, laser radiation or plasma ; by ultrasonic bonding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
    • B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/20—Bonding
    • B23K26/32—Bonding taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/34—Laser welding for purposes other than joining
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4867—Applying pastes or inks, e.g. screen printing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092—Dispersed materials, e.g. conductive pastes or inks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H05K3/1241—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing
    • H05K3/125—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing by ink-jet printing
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H05K3/1283—After-treatment of the printed patterns, e.g. sintering or curing methods
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4664—Adding a circuit layer by thick film methods, e.g. printing techniques or by other techniques for making conductive patterns by using pastes, inks or powders
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/52—Ceramics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/06—Thermal details
    • H05K2201/062—Means for thermal insulation, e.g. for protection of parts
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
    • H05K2203/107—Using laser light
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base
    • Y10T29/49156—Manufacturing circuit on or in base with selective destruction of conductive paths

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Ceramic Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Laminated Bodies (AREA)

Abstract

在基板上沉积导线以产生用于在电子元件之间导电的迹线。在基板上形成图案化金属层，并且随后在图案化金属层和基板上涂敷具有低热导率的材料层。穿过具有低热导率的材料层形成通孔，由此露出图案化金属层的多个部分。导电墨膜随后被涂敷在具有低热导率的材料层上并进入通孔以由此涂敷图案化金属层的多个部分，并且随后被烧结。涂敷在图案化金属层的部分上的导电墨膜从烧结吸收的能量不如涂敷在具有低热导率的材料层上的导电墨膜所吸收的多。具有低热导率的材料层可以是聚合物，诸如聚酰亚胺。

Description

增强光和/或激光烧结的缓冲层
本申请要求美国临时专利申请S/N.61/174,758和61/163,894的优先权。
背景信息
微电子和半导体封装行业已经开始变换到可印刷电子行业。电子电路包括彼此电连接的各种组件。不同组件之间的这些电连接可由能用导电墨印刷在基板上的导电金属迹线制成迹线。墨在基板上沉积之后进行处理并烧结以变得导电。热烧结使用高温(例如，≥250℃)来熔合墨中的纳米颗粒。光子(光)和激光烧结利用极高强度的灯/激光用低温在极短的时间段(例如，微秒)内熔合纳米颗粒而不损坏下面的基板。然而，光/激光烧结工艺具有基板需要低热导率材料的限制，以使纳米颗粒有效地吸收能量并且在热能消散到基板中之前烧结。换言之，可用于这些应用的基板将仅限于低热导率材料。
另一方面，低热导率基板可用于柔性可印刷电子技术。诸如聚乙烯(PE)、聚酯(PET)等低温熔点材料可防止纳米颗粒墨正确地烧结，并且可损坏基板，其结果是电阻率将很高。
附图简述
图1是示出光烧结在四个硅晶片上的铜墨的数字照片。
图2是示出光烧结之前的铜墨的数字照片。
图3是示出光烧结之后的铜墨的数字照片。
图4是示出Kapton基板上的激光烧结线的数字照片。
图5是示出图4的激光烧结线的放大数字照片。
图6示出了显示通过激光来烧结的铜墨的电阻率不仅与激光功率成反比、而且与由聚酰亚胺制成的缓冲层的厚度成反比的曲线图。
图7示出了显示在各个自旋速度下所测量的经固化聚酰亚胺的厚度的曲线图。
图8示出了显示经烧结铜膜的电阻率与聚酰亚胺的厚度成反比的曲线图。
图9示出了显示铜墨膜对聚酰亚胺的粘合性与聚酰亚胺的厚度成正比的曲线图。
图10示出了显示激光写入线宽度与激光功率密度成正比的曲线图。
图11A-11F示出了根据本发明的实施例的工艺。
详细描述
本发明的实施例公开了一种光烧结工艺，用以有效地在聚酰亚胺基板上烧结金属纳米颗粒，由此使膜在体材料附近是极为导电的。另一方面，不能很好地对涂敷在拥有高热导率的基板(诸如，陶瓷和硅晶片)上的纳米颗粒墨执行光烧结工艺。表1示出了各种材料的热导率。
表1
Figure BPA00001445975300021
诸如聚酰亚胺之类的低电导率材料可用作其他高热导率基板(诸如，陶瓷和硅晶片)上的涂敷材料，从而在光烧结工艺期间使散热与纳米颗粒隔离以便更有效地熔合纳米颗粒。散热多快取决于低热导率材料(例如，聚酰亚胺膜)的厚度。
为了示出本发明如何工作进行以下实验。三个晶片分别用1、1.5和2.3微米厚的DuPont PI-2610聚酰亚胺来自旋涂敷，并且在350℃的温度下进行热固化达30分钟。一个裸硅晶片用作基准(晶片#1)。所有四个晶片使用引伸(drawdown)工艺用铜墨来涂敷。在100℃的温度下执行60分钟的干燥工艺之后，每个晶片分成三个区，这三个区分别用三个不同的能级来烧结。用电压表来测量每个区和每个晶片的电阻，其结果在表2中示出，表2示出了在硅晶片上有各种涂敷厚度的聚酰亚胺的情况下光烧结之后的铜膜的电阻。
表2
Figure BPA00001445975300031
其中 能级1＝850/1050V、1000μsec的三个烧结射击
能级2＝850/1150V、1000μsec的四个烧结射击
能级3＝850/1250V、2000μsec的五个烧结射击
除晶片4的区3之外，四个晶片的所有区在光烧结之后电阻不再改变。晶片4的区3在最高能级改变了其金属颜色，如图1所示。这个区域被剧烈吹除。周围区域有留下的铜碎片，这些铜碎片导电。这清楚地证明了聚酰亚胺材料可用作热绝缘体。聚酰亚胺的厚度可大于3微米。聚酰亚胺和硅的热导率分别为0.12和148W/m.K。因为没有聚酰亚胺材料，所以热很快地消散到硅基板(晶片#1)中以至于不能烧结铜纳米颗粒。
晶片1、2和3都有高电阻(大于20兆欧姆)。如图1所示在中心区具有20欧姆电阻的晶片4显现出铜纳米颗粒膜开始熔合、烧结并变成铜色。由此，更厚的低热导率材料可用作不错的热绝缘体。
除以上公开的液态聚酰亚胺之外，还可利用干聚酰亚胺膜。在50微米的聚酰亚胺膜(Kapton)上涂敷铜墨。在硅晶片和carbAL高热导率的散热片上放置样本，如图2所示。硅脂被涂敷在Kapton和硅晶片和carbAL之间以确保良好的热接触。同时在单个射击中光烧结样本。铜被烧结地很好并变成有光泽的铜色，如图3所示。Kapton驻留在什么材料上是没有关系的。至少50微米厚的聚酰亚胺对于光烧结工艺的隔离热能和防止散热而言是足够厚的，尽管小于50微米的厚度可用于导电迹线需要更小电导率的实施例。
另外，通过如上所述的相同设置在硅晶片上利用激光烧结。激光器是波长为830nm和功率为800mW的固态二极管。聚焦光束尺寸是直径为15微米并且由准直仪和物镜控制，如图4和5所示。
该激光器有足够的功率来烧结和熔合纳米颗粒并使铜墨变成导电。存在分别用各个厚度为1、1.5、2和3的聚酰亚胺来涂敷的四个硅晶片，以及作为基准的裸硅晶片。在图6中绘制了每个晶片的电阻率以及激光功率，图6示出铜膜电导率与聚酰亚胺的厚度成正比，并且激光所产生的热被传送到基板，具有聚酰亚胺的基板的热比没有聚酰亚胺的裸硅晶片的热少。这清楚地证明了任何具有低热导率的材料(诸如，聚酰亚胺材料)可用作热绝缘体并且可增强光和激光烧结工艺。
此外，各个厚度的聚酰亚胺被涂敷在硅晶片上并且在350℃温度下被固化一小时。随后标准铜墨通过引伸来涂敷，在烤箱中干燥，并且被光/激光烧结。电测量被执行并且表征为铜墨样本。
由DuPont制造的三种类型的聚酰亚胺材料用于以1000、2000、3000、4000和5000rpm自旋涂敷在硅晶片上。图7示出了显示在各个自旋速度下所测量的经固化聚酰亚胺的厚度的曲线图。对于每个晶片范围分别为1到20微米。
在准备好样本之后，对铜墨执行光和激光烧结两者。不同类型的烧结就电阻率和粘合性以及用于激光烧结的线宽进行比较。表3示出了在各个厚度的聚酰亚胺的情况下在相同能级下光烧结的样本。表4示出了在各个厚度的聚酰亚胺的情况下在固定能级激光烧结的样本。
表3
Figure BPA00001445975300041
表4
Figure BPA00001445975300051
图8示出了显示经烧结铜膜的电阻率与聚酰亚胺厚度成反比的曲线图。电阻率的饱和点针对光烧结大约在10微米处，而针对激光烧结大约在5微米处。光烧结的功率密度比激光烧结的功率密度小很多，这提供了为什么其电阻率更高的原因。
图9示出了显示铜墨膜对聚酰亚胺的粘合性与聚酰亚胺厚度成正比的曲线图。存在一些噪声点，但是从曲线图来看趋势很清楚。聚酰亚胺越厚，粘合性越好。再次，针对良好粘合性的聚酰亚胺厚度的临界点对于光烧结大约在10微米处，而对于激光烧结大约在5微米处。
图10示出了显示激光写入线宽度与激光功率密度成正比的曲线图。通过给定的激光功率，激光写入线宽也与聚酰亚胺膜厚度成正比，这更加证明了对于这些工艺聚酰亚胺是不错的热绝缘体。沉积在铜墨表面的激光能量和热不能垂直散布到任意深度，但可以在聚酰亚胺厚度增加时横向散布。
参考图11A-11F，示出了用于执行本发明的实施例的工艺。设置在其上要安装电子电路的基板1101。在图11B中，使用公知的制造工艺，在基板1101上以所需图案沉积金属材料1102的迹线。在图11C中，在金属迹线1102和基板1101上涂敷低热导率材料层1103，诸如，聚酰亚胺。为了创建要沉积的导电迹线的其他图案，穿过材料1103形成通孔1104，从而露出金属迹线1102的多个部分。在图11E中，喷墨装置1106在材料1103和通过通孔1104露出的金属迹线1102上沉积导电墨1105，诸如，铜纳米颗粒。在图11F中，对所沉积的导电墨纳米颗粒1105执行光或激光烧结工艺以将它们烧结到导电迹线1107中，如此处所述。在美国专利公开No.2008/0286488 A1中描述了导电墨的沉积和烧结工艺，该专利公开通过引用结合于此。
概述
1.光烧结工艺的有效性不仅取决于金属纳米颗粒的尺寸，而且取决于物质的类型。
2.有效的光烧结通过300nm以下的纳米颗粒来实现。
3.物质的热导率可影响金属墨光烧结。物质的热导率越低，纳米颗粒膜的电导率越好。
4.高热导率物质可通过涂敷诸如聚酰亚胺或聚合物之类的低热导率材料来针对有效的光烧结工艺进行调整和隔离。
5.隔离散热所需的聚酰亚胺的涂敷厚度约为1-50微米。
6.通过激光和光烧结两者，在诸如硅晶片之类的高热导率材料上展示变成导电膜的铜墨。
7.通过涂敷在晶片上的各个厚度的聚酰亚胺来示出高热导率硅晶片上的散热。低热导率材料可用作缓冲层以放慢散热且增强光或激光烧结。
8.铜墨可通过涂敷在硅晶片上的聚酰亚胺来很好地烧结，其电阻率通过光烧结为1x10-5欧姆-cm而通过激光烧结为4x10-6欧姆-cm。
9.聚酰亚胺材料不仅可用作高热导率基板上的热绝缘体并增强铜墨光和激光烧结的有效性，而且可应用于低熔温基板作为用以在烧结工艺期间保护其免受热损坏的热绝缘体。
10.聚酰亚胺层和金属迹线层可被重复若干次作为多层电路。
11.聚酰亚胺层可用作电介质材料并且作为电容器而引入。
12.纳米铜墨可在顶层导体处用作为二维和三维芯片封装应用中的触点金属。

Claims (25)

1.一种用于在基板上沉积导线的方法，包括：
在所述基板上以图案沉积金属层；
在图案化金属层和所述基板上涂敷具有低热导率的材料层；
在具有所述低热导率的材料层上沉积导电墨膜；以及
烧结所述导电墨膜。
2.如权利要求1所述的方法，其特征在于，还包括：
穿过具有所述低热导率的材料层形成通孔，由此露出所述图案化金属层的一部分，其中沉积所述导电墨膜包括将所述导电墨膜沉积到所述通孔中以由此用所述导电墨膜来涂敷所述图案化金属层的部分，其中涂敷所述图案化金属层的部分的导电墨膜还被烧结。
3.如权利要求2所述的方法，其特征在于，涂敷在所述图案化金属层的部分上的导电墨膜从烧结耗散的能量不如涂敷在具有所述低热导率的材料层上的导电墨膜多。
4.如权利要求3所述的方法，其特征在于，具有所述低热导率的材料层包括聚合物。
5.如权利要求3所述的方法，其特征在于，具有所述低热导率的材料层包括聚酰亚胺。
6.如权利要求5所述的方法，其特征在于，所述聚酰亚胺的厚度为至少50微米。
7.如权利要求5所述的方法，其特征在于，所述烧结用光烧结装置来执行。
8.如权利要求5所述的方法，其特征在于，所述烧结用激光烧结装置来执行。
9.如权利要求8所述的方法，其特征在于，所述激光烧结装置包括波长为830nm和功率为800mW的固态二极管。
10.如权利要求9所述的方法，其特征在于，所述固态二极管的聚焦光束尺寸是直径为15微米。
11.如权利要求5所述的方法，其特征在于，所述聚酰亚胺的厚度为至少5微米。
12.如权利要求5所述的方法，其特征在于，所述聚酰亚胺的厚度为至少2.3微米。
13.如权利要求5所述的方法，其特征在于，所述基板包括硅。
14.如权利要求5所述的方法，其特征在于，所述基板包括陶瓷。
15.如权利要求1所述的方法，其特征在于，所述基板的热导率大于具有所述低热导率的材料层的热导率。
16.如权利要求5所述的方法，其特征在于，所述导电墨膜包括铜纳米颗粒。
17.一种电子电路，包括：
基板；
沉积在所述基板上的金属迹线图案；
涂敷在所述基板和金属迹线图案上的低热导率材料层，所述金属迹线图案沉积在所述基板上，其中穿过所述低热导率材料层在所述金属迹线图案的部分上形成通孔；以及
涂敷在所述低热导率材料层上的经烧结导电墨膜，所述低热导率材料层涂敷在所述基板上，其中在所述金属迹线图案的部分上、在穿过所述低热导率材料层形成的通孔内涂敷所述经烧结导电墨膜。
18.如权利要求17所述的电子电路，其特征在于，所述基板的热导率大于具有所述低热导率的材料层的热导率。
19.如权利要求18所述的电子电路，其特征在于，所述低热导率材料层包括聚酰亚胺。
20.如权利要求19所述的电子电路，其特征在于，所述聚酰亚胺的厚度为至少50微米。
21.如权利要求19所述的电子电路，其特征在于，所述经烧结导电墨包括用光烧结装置来烧结的经烧结铜纳米颗粒。
22.如权利要求19所述的电子电路，其特征在于，所述经烧结导电墨包括用激光烧结装置来烧结的经烧结铜纳米颗粒。
23.如权利要求19所述的电子电路，其特征在于，所述聚酰亚胺的厚度为至少5微米。
24.如权利要求19所述的电子电路，其特征在于，所述聚酰亚胺的厚度为至少2.3微米。
25.如权利要求19所述的电子电路，其特征在于，所述基板包括硅。
CN201080015842.4A 2009-03-27 2010-03-26 增强光和/或激光烧结的缓冲层 Expired - Fee Related CN102365713B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US16389409P 2009-03-27 2009-03-27
US61/163,894 2009-03-27
US17475809P 2009-05-01 2009-05-01
US61/174,758 2009-05-01
PCT/US2010/028811 WO2010111581A1 (en) 2009-03-27 2010-03-26 Buffer layer to enhance photo and/or laser sintering

Publications (2)

Publication Number Publication Date
CN102365713A true CN102365713A (zh) 2012-02-29
CN102365713B CN102365713B (zh) 2015-11-25

Family

ID=42781539

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080015842.4A Expired - Fee Related CN102365713B (zh) 2009-03-27 2010-03-26 增强光和/或激光烧结的缓冲层

Country Status (7)

Country Link
US (2) US8647979B2 (zh)
EP (1) EP2412007B1 (zh)
JP (1) JP5740389B2 (zh)
KR (1) KR101735710B1 (zh)
CN (1) CN102365713B (zh)
TW (1) TWI492303B (zh)
WO (1) WO2010111581A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110421839A (zh) * 2019-07-26 2019-11-08 成都职业技术学院 基于3d打印的二极管及其打印方法
CN110536800A (zh) * 2017-04-20 2019-12-03 汉阳大学校产学协力团 光烧结粒子制备方法、光烧结靶制备方法及光烧结方法

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10231344B2 (en) * 2007-05-18 2019-03-12 Applied Nanotech Holdings, Inc. Metallic ink
US9730333B2 (en) 2008-05-15 2017-08-08 Applied Nanotech Holdings, Inc. Photo-curing process for metallic inks
JP5740389B2 (ja) * 2009-03-27 2015-06-24 アプライド・ナノテック・ホールディングス・インコーポレーテッド 光焼結及び／またはレーザー焼結を強化するためのバッファ層
KR20120051991A (ko) * 2010-11-15 2012-05-23 삼성전기주식회사 인쇄회로기판 및 그 제조 방법
US9779874B2 (en) 2011-07-08 2017-10-03 Kemet Electronics Corporation Sintering of high temperature conductive and resistive pastes onto temperature sensitive and atmospheric sensitive materials
KR101357179B1 (ko) * 2011-10-31 2014-02-12 한국과학기술원 나노와이어 제조방법, 나노와이어 패턴 형성방법 및 그 방법에 의해 제조된 나노와이어
JP5489305B2 (ja) * 2012-06-27 2014-05-14 石原ケミカル株式会社 回路基板及び導電膜形成方法
TW201419315A (zh) 2012-07-09 2014-05-16 Applied Nanotech Holdings Inc 微米尺寸銅粒子的光燒結法
US8940627B2 (en) 2012-11-19 2015-01-27 Nthdegree Technologies Worldwide Inc. Conductive ink for filling vias
JP2014194070A (ja) * 2013-02-28 2014-10-09 Jsr Corp 金属膜形成方法および前記方法に用いる導電性インク
US20150201504A1 (en) * 2014-01-15 2015-07-16 Applied Nanotech, Inc. Copper particle composition
US9999137B2 (en) 2014-11-04 2018-06-12 Intrinsiq Materials, Inc. Method for forming vias on printed circuit boards
US11185918B2 (en) * 2015-07-03 2021-11-30 National Research Council Of Canada Self-aligning metal patterning based on photonic sintering of metal nanoparticles
FR3038534A1 (fr) * 2015-07-10 2017-01-13 Commissariat Energie Atomique Assemblage d'un element avec un substrat isole electriquement et a faible resistance thermique notamment pour des applications haute temperature, ensemble comprenant ledit assemblage et un drain thermique et procede de fabrication
WO2017160288A1 (en) * 2016-03-16 2017-09-21 Ncc Nano, Llc Method for depositing a functional material on a substrate
US9935079B1 (en) 2016-12-08 2018-04-03 Nxp Usa, Inc. Laser sintered interconnections between die
US9865527B1 (en) 2016-12-22 2018-01-09 Texas Instruments Incorporated Packaged semiconductor device having nanoparticle adhesion layer patterned into zones of electrical conductance and insulation
US9941194B1 (en) 2017-02-21 2018-04-10 Texas Instruments Incorporated Packaged semiconductor device having patterned conductance dual-material nanoparticle adhesion layer
US11557565B2 (en) 2020-10-06 2023-01-17 Nxp Usa, Inc. Semiconductor device assembly and method therefor
US11502054B2 (en) 2020-11-11 2022-11-15 Nxp Usa, Inc. Semiconductor device assembly and method therefor
WO2023215125A1 (en) * 2022-05-02 2023-11-09 Corning Incorporated Electronic devices and methods of forming an electrically conductive trace

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5724727A (en) * 1996-08-12 1998-03-10 Motorola, Inc. Method of forming electronic component
US20040147113A1 (en) * 2003-01-17 2004-07-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing conductive layer and semiconductor device
US20060163744A1 (en) * 2005-01-14 2006-07-27 Cabot Corporation Printable electrical conductors
JP2007042725A (ja) * 2005-08-01 2007-02-15 Konica Minolta Holdings Inc 金属パターンの形成方法
US7384862B2 (en) * 2003-06-30 2008-06-10 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating semiconductor device and display device
US20080164557A1 (en) * 2007-01-08 2008-07-10 Samsung Electronics Co., Ltd. Semiconductor device and method of forming the same

Family Cites Families (226)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3239597A (en) 1963-09-16 1966-03-08 Honeywell Inc Self-repair circuit apparatus
US3580731A (en) 1967-09-26 1971-05-25 Gen Technologies Corp Method of treating the surface of a filament
GB1198900A (en) 1967-10-25 1970-07-15 Hitachi Ltd Planar Transistor and Method of Making the Same
CA962933A (en) 1969-12-05 1975-02-18 Yutaka Hori Metal foil-plastic laminated film and method of producing the same
US4151008A (en) 1974-11-15 1979-04-24 Spire Corporation Method involving pulsed light processing of semiconductor devices
US4093466A (en) 1975-05-06 1978-06-06 Amp Incorporated Electroless tin and tin-lead alloy plating baths
US4194913A (en) 1975-05-06 1980-03-25 Amp Incorporated Electroless tin and tin-lead alloy plating baths
USRE30434E (en) 1978-12-21 1980-11-11 Amp Incorporated Electroless tin and tin-lead alloy plating baths
US4234631A (en) 1979-07-20 1980-11-18 Amp Incorporated Method for immersion deposition of tin and tin-lead alloys
US4331518A (en) 1981-01-09 1982-05-25 Vulcan Materials Company Bismuth composition, method of electroplating a tin-bismuth alloy and electroplating bath therefor
US4591951A (en) 1984-07-24 1986-05-27 Matsushita Electric Industrial Co., Ltd. Mounting arrangement for electronic components
US4640746A (en) 1984-10-11 1987-02-03 Learonal, Inc. Bath and process for plating tin/lead alloys on composite substrates
US4749626A (en) 1985-08-05 1988-06-07 Olin Corporation Whisker resistant tin coatings and baths and methods for making such coatings
US4681670A (en) 1985-09-11 1987-07-21 Learonal, Inc. Bath and process for plating tin-lead alloys
JPH0241112Y2 (zh) 1986-01-30 1990-11-01
US4756791A (en) 1986-08-25 1988-07-12 Gte Laboratories Incorporated Chemical vapor deposition process for producing metal carbide or nitride whiskers
JPS642330A (en) 1987-06-25 1989-01-06 Nippon Mining Co Ltd Film carrier and manufacture thereof
US4959278A (en) 1988-06-16 1990-09-25 Nippon Mining Co., Ltd. Tin whisker-free tin or tin alloy plated article and coating technique thereof
US5008997A (en) 1988-09-16 1991-04-23 National Semiconductor Gold/tin eutectic bonding for tape automated bonding process
US4922322A (en) 1989-02-09 1990-05-01 National Semiconductor Corporation Bump structure for reflow bonding of IC devices
JPH02307551A (ja) 1989-05-20 1990-12-20 Abisare:Kk 静電吸着シート
US5039576A (en) 1989-05-22 1991-08-13 Atochem North America, Inc. Electrodeposited eutectic tin-bismuth alloy on a conductive substrate
US5160422A (en) 1989-05-29 1992-11-03 Shimizu Co., Ltd. Bath for immersion plating tin-lead alloys
US4997722A (en) 1989-07-10 1991-03-05 Edward Adler Composition and method for improving adherence of copper foil to resinous substrates
US4997516A (en) 1989-07-10 1991-03-05 Edward Adler Method for improving adherence of copper foil to resinous substrates
US5320737A (en) 1989-08-10 1994-06-14 Olin Corporation Treatment to reduce solder plating whisker formation
US5049718A (en) 1989-09-08 1991-09-17 Microelectronics And Computer Technology Corporation Method of laser bonding for gold, gold coated and gold alloy coated electrical members
US5260849A (en) 1990-03-06 1993-11-09 Abisare Co., Ltd. Electrostatic attracting sheet
US5130275A (en) 1990-07-02 1992-07-14 Digital Equipment Corp. Post fabrication processing of semiconductor chips
JPH0484449A (ja) 1990-07-27 1992-03-17 Shinko Electric Ind Co Ltd Ｔａｂテープ
JPH04130049A (ja) 1990-09-18 1992-05-01 Mitsubishi Materials Corp セラミックス複合材料及びその製造方法
JP2536685B2 (ja) 1990-10-22 1996-09-18 日本鋼管株式会社 Ａｇメッキ性に優れたリ―ドフレ―ム素材用Ｆｅ―Ｎｉ合金およびその製造方法
US5393573A (en) 1991-07-16 1995-02-28 Microelectronics And Computer Technology Corporation Method of inhibiting tin whisker growth
US5861076A (en) 1991-07-19 1999-01-19 Park Electrochemical Corporation Method for making multi-layer circuit boards
JP3364968B2 (ja) 1992-09-01 2003-01-08 株式会社デンソー 電 池
US5698087A (en) 1992-03-11 1997-12-16 Mcgean-Rohco, Inc. Plating bath and method for electroplating tin and/or lead
US5439639A (en) 1994-01-05 1995-08-08 Sandia Corporation Tin-silver-bismuth solders for electronics assembly
US5492595A (en) 1994-04-11 1996-02-20 Electrochemicals, Inc. Method for treating an oxidized copper film
US5798286A (en) 1995-09-22 1998-08-25 Tessera, Inc. Connecting multiple microelectronic elements with lead deformation
CA2143606C (en) 1995-02-24 1999-07-20 Peter Arrowsmith Method of making electronic housings more reliable by preventing formation of metallic whiskers on the sheets used to fabricate them
US5576074A (en) * 1995-08-23 1996-11-19 Minnesota Mining And Manufacturing Company Laser write process for making a conductive metal circuit
EP0857348A4 (en) 1995-10-07 2000-07-05 Bemis Co Inc WITH A COMPONENT FOR ELECTRICAL CIRCUITS PRODUCED ON A SUBSTRATE PRINTED ON A SUBSTRATE
DE69716332T2 (de) 1996-04-15 2003-02-20 Teijin Seiki Co Ltd Verwendung einer photohärtbaren Harzzusammensetzung zur Herstellung eines Objektes mittels Stereolithographie
TW331698B (en) 1996-06-18 1998-05-11 Hitachi Chemical Co Ltd Multi-layered printed circuit board
JPH106346A (ja) 1996-06-19 1998-01-13 Takemoto Oil & Fat Co Ltd プラスチック成形型の製造方法及びプラスチック成形型
US5750017A (en) 1996-08-21 1998-05-12 Lucent Technologies Inc. Tin electroplating process
US5889083A (en) 1996-09-06 1999-03-30 Videojet Systems International, Inc. Aqueous jet ink compositions
US5990197A (en) 1996-10-28 1999-11-23 Eastman Chemical Company Organic solvent based ink for invisible marking/identification
US6099713A (en) 1996-11-25 2000-08-08 C. Uyemura & Co., Ltd. Tin-silver alloy electroplating bath and tin-silver alloy electroplating process
US6679937B1 (en) 1997-02-24 2004-01-20 Cabot Corporation Copper powders methods for producing powders and devices fabricated from same
JP3630920B2 (ja) 1997-05-02 2005-03-23 株式会社アルバック 金属ペーストの焼成方法
US6238847B1 (en) 1997-10-16 2001-05-29 Dmc Degussa Metals Catalysts Cerdec Ag Laser marking method and apparatus
US20050097987A1 (en) 1998-02-24 2005-05-12 Cabot Corporation Coated copper-containing powders, methods and apparatus for producing such powders, and copper-containing devices fabricated from same
SG111958A1 (en) 1998-03-18 2005-06-29 Hitachi Cable Semiconductor device
US6139777A (en) 1998-05-08 2000-10-31 Matsushita Electric Industrial Co., Ltd. Conductive paste for filling via-hole, double-sided and multilayer printed circuit boards using the same, and method for producing the same
JPH11319538A (ja) 1998-05-20 1999-11-24 Nippon Paint Co Ltd 貴金属又は銅のコロイドの製造方法
US6277740B1 (en) 1998-08-14 2001-08-21 Avery N. Goldstein Integrated circuit trenched features and method of producing same
US7294366B2 (en) 1998-09-30 2007-11-13 Optomec Design Company Laser processing for heat-sensitive mesoscale deposition
KR100629923B1 (ko) 1998-09-30 2006-09-29 돗빤호무즈가부시기가이샤 도전성페이스트와 도전성페이스트의 경화방법, 및 도전성페이스트를 이용한 비접촉형 데이터송수신체용 안테나의 형성방법과, 비접촉형 데이터송수신체
US6248455B1 (en) 1998-12-22 2001-06-19 International Business Machines Corporation Alloy-plated sheet steel cured with a thin layer of insulating polymer material forming an electrically nonconductive breachable metal substrate
US6306947B1 (en) 1999-05-27 2001-10-23 Nippon Polyurethane Industry Co., Ltd. Printing ink and paint composed of an aqueous emulsion of self-emulsifiable urethane copolymer
US6245849B1 (en) 1999-06-02 2001-06-12 Sandia Corporation Fabrication of ceramic microstructures from polymer compositions containing ceramic nanoparticles
US6361823B1 (en) 1999-12-03 2002-03-26 Atotech Deutschland Gmbh Process for whisker-free aqueous electroless tin plating
US6348125B1 (en) 2000-01-17 2002-02-19 Micron Technology, Inc. Removal of copper oxides from integrated interconnects
US6530944B2 (en) 2000-02-08 2003-03-11 Rice University Optically-active nanoparticles for use in therapeutic and diagnostic methods
JP3568869B2 (ja) * 2000-02-28 2004-09-22 シャープ株式会社 半導体集積回路装置及びその製造方法
US20060110424A1 (en) 2000-03-24 2006-05-25 Lyles Mark B Ceramic and metal compositions
US20050019543A1 (en) 2003-07-24 2005-01-27 Materials Evolution And Development Usa, Inc. Ceramic and metal compositions
US6638847B1 (en) 2000-04-19 2003-10-28 Advanced Interconnect Technology Ltd. Method of forming lead-free bump interconnections
JP2001325831A (ja) 2000-05-12 2001-11-22 Bando Chem Ind Ltd 金属コロイド液、導電性インク、導電性被膜及び導電性被膜形成用基底塗膜
JP3475910B2 (ja) 2000-05-24 2003-12-10 株式会社村田製作所 電子部品、電子部品の製造方法および回路基板
JP3350026B2 (ja) 2000-08-01 2002-11-25 エフシーエム株式会社 電子部品用材料、電子部品用材料の接続方法、ボールグリッドアレイ型電子部品およびボールグリッドアレイ型電子部品の接続方法
US6602653B1 (en) 2000-08-25 2003-08-05 Micron Technology, Inc. Conductive material patterning methods
DE50106133D1 (de) 2000-09-20 2005-06-09 Schloetter Fa Dr Ing Max Elektrolyt und verfahren zur abscheidung von zinn-kupfer-legierungsschichten
JP3417395B2 (ja) 2000-09-21 2003-06-16 松下電器産業株式会社 半導体装置用リードフレーム及びその製造方法及びそれを用いた半導体装置
US20030151030A1 (en) 2000-11-22 2003-08-14 Gurin Michael H. Enhanced conductivity nanocomposites and method of use thereof
US7252699B2 (en) 2000-12-15 2007-08-07 The Arizona Board Of Regents Method for patterning metal using nanoparticle containing precursors
EP1223615A1 (en) 2001-01-10 2002-07-17 Eidgenössische Technische Hochschule Zürich A method for producing a structure using nanoparticles
US6554914B1 (en) 2001-02-02 2003-04-29 Novellus Systems, Inc. Passivation of copper in dual damascene metalization
US7189435B2 (en) 2001-03-14 2007-03-13 University Of Massachusetts Nanofabrication
US20020187364A1 (en) 2001-03-16 2002-12-12 Shipley Company, L.L.C. Tin plating
EP1244168A1 (en) 2001-03-20 2002-09-25 Francois Sugnaux Mesoporous network electrode for electrochemical cell
US20020148386A1 (en) 2001-04-17 2002-10-17 Woosman Nicole M. Ink compositions involving near-infrared absorber dyes and use in ink jet printing devices
WO2002087749A1 (en) 2001-04-30 2002-11-07 Postech Foundation Colloid solution of metal nanoparticles, metal-polymer nanocomposites and methods for preparation thereof
US6651521B2 (en) 2001-05-01 2003-11-25 Hewlett-Packard Development Company, L.P. Method for sampling and testing data centers for metallic particulates
US20020185716A1 (en) 2001-05-11 2002-12-12 Abys Joseph Anthony Metal article coated with multilayer finish inhibiting whisker growth
US20020192492A1 (en) 2001-05-11 2002-12-19 Abys Joseph Anthony Metal article coated with near-surface doped tin or tin alloy
DE60226196T2 (de) 2001-05-24 2009-05-14 Shipley Co., L.L.C., Marlborough Zinn-Plattieren
US20030025182A1 (en) 2001-06-22 2003-02-06 Abys Joseph A. Metal article coated with tin or tin alloy under tensile stress to inhibit whisker growth
KR100438408B1 (ko) 2001-08-16 2004-07-02 한국과학기술원 금속간의 치환 반응을 이용한 코어-쉘 구조 및 혼합된합금 구조의 금속 나노 입자의 제조 방법과 그 응용
US20060001726A1 (en) 2001-10-05 2006-01-05 Cabot Corporation Printable conductive features and processes for making same
US20060159838A1 (en) 2005-01-14 2006-07-20 Cabot Corporation Controlling ink migration during the formation of printable electronic features
US6951666B2 (en) 2001-10-05 2005-10-04 Cabot Corporation Precursor compositions for the deposition of electrically conductive features
EP1468054A1 (en) 2001-11-01 2004-10-20 Yissum Research Development Company of the Hebrew University of Jerusalem Ink-jet inks containing metal nanoparticles
US6682584B2 (en) 2001-12-20 2004-01-27 Cima Nanotech, Inc. Process for manufacture of reacted metal nanoparticles
JP2003288812A (ja) 2001-12-29 2003-10-10 Samsung Electronics Co Ltd 金属ナノ粒子クラスターインクおよびこれを用いた金属パターン形成方法
WO2003061970A2 (en) 2002-01-23 2003-07-31 Contra Vision Ltd. Printing with differential adhesion
US6583500B1 (en) 2002-02-11 2003-06-24 Texas Instruments Incorporated Thin tin preplated semiconductor leadframes
JP4897187B2 (ja) 2002-03-05 2012-03-14 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． スズメッキ方法
JP2003292836A (ja) 2002-04-01 2003-10-15 Canon Inc インク及びインクジェット記録方法
US20040026684A1 (en) 2002-04-02 2004-02-12 Nanosys, Inc. Nanowire heterostructures for encoding information
JP4042497B2 (ja) * 2002-04-15 2008-02-06 セイコーエプソン株式会社 導電膜パターンの形成方法、配線基板、電子デバイス、電子機器、並びに非接触型カード媒体
US6860981B2 (en) 2002-04-30 2005-03-01 Technic, Inc. Minimizing whisker growth in tin electrodeposits
EP2154212A1 (en) 2002-06-13 2010-02-17 Cima Nano Tech Israel Ltd A method for the production of conductive and transparent nano-coatings
AU2003237578A1 (en) 2002-07-03 2004-01-23 Nanopowders Industries Ltd. Low sintering temperatures conductive nano-inks and a method for producing the same
US6664492B1 (en) 2002-07-16 2003-12-16 Hewlett-Packard Development Company Method of eliminating electrically-conductive particles from an airstream
US7695689B2 (en) 2002-07-18 2010-04-13 National Institute Of Advanced Industrial Science And Technology Micro reactor device and method of manufacturing micro reactor device
US20040026256A1 (en) 2002-08-08 2004-02-12 Lindgren Joseph T. Method and apparatus for protecting tooling in a lead-free bath
EP1400613A2 (en) 2002-09-13 2004-03-24 Shipley Co. L.L.C. Tin plating method
JP2004127676A (ja) 2002-10-01 2004-04-22 Seiko Epson Corp 配線パターン用インク、配線パターンの形成方法、導電膜配線、電気光学装置、並びに電子機器
KR101101698B1 (ko) 2002-10-21 2011-12-30 나노잉크, 인크. 나노미터-수준으로 제어된 구조, 이의 제작을 위한 방법 및장치, 및 마스크 복구, 강화, 및 제작에의 적용
GB0224871D0 (en) 2002-10-25 2002-12-04 Plastic Logic Ltd Self-aligned doping of source-drain contacts
JP2004204308A (ja) 2002-12-25 2004-07-22 Nec Semiconductors Kyushu Ltd 鉛フリー錫合金めっき方法
US6881250B2 (en) 2003-01-15 2005-04-19 Xerox Corporation Tailored ink for piston driven electrostatic liquid drop modulator
US6828660B2 (en) 2003-01-17 2004-12-07 Texas Instruments Incorporated Semiconductor device with double nickel-plated leadframe
WO2004108589A2 (en) 2003-01-21 2004-12-16 The Penn State Research Foundation Nanoparticle coated nanostructured surfaces for detection, catalysis and device applications
WO2004075211A1 (en) 2003-02-20 2004-09-02 The Regents Of The University Of California Method of forming conductors at low temperatures using metallic nanocrystals and product
US7244513B2 (en) 2003-02-21 2007-07-17 Nano-Proprietary, Inc. Stain-etched silicon powder
KR100485388B1 (ko) * 2003-02-28 2005-04-27 삼성전자주식회사 트렌치 형성 방법 및 이를 이용한 반도체 장치의 제조 방법
JP2004273592A (ja) 2003-03-06 2004-09-30 Seiko Epson Corp 半導体装置及びその製造方法
US7061570B2 (en) * 2003-03-26 2006-06-13 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
US6773828B1 (en) 2003-04-18 2004-08-10 Ase Electronics (M) Sdn. Bhd. Surface preparation to eliminate whisker growth caused by plating process interruptions
JP4603812B2 (ja) 2003-05-12 2010-12-22 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 改良されたスズめっき方法
US7531267B2 (en) 2003-06-02 2009-05-12 Kh Chemicals Co., Ltd. Process for preparing carbon nanotube electrode comprising sulfur or metal nanoparticles as a binder
US7195702B2 (en) 2003-06-06 2007-03-27 Taskem, Inc. Tin alloy electroplating system
US7682970B2 (en) 2003-07-16 2010-03-23 The Regents Of The University Of California Maskless nanofabrication of electronic components
KR101160701B1 (ko) 2003-09-12 2012-06-28 도꾸리쯔교세이호진 상교기쥬쯔 소고겡뀨죠 기판 및 그 제조방법
US7062848B2 (en) 2003-09-18 2006-06-20 Hewlett-Packard Development Company, L.P. Printable compositions having anisometric nanostructures for use in printed electronics
US7391116B2 (en) 2003-10-14 2008-06-24 Gbc Metals, Llc Fretting and whisker resistant coating system and method
KR100771393B1 (ko) 2003-10-20 2007-10-30 하리마 카세이 가부시키가이샤 건조 분말상의 금속 미립자 및 금속 산화물 미립자와 그용도
US6917098B1 (en) 2003-12-29 2005-07-12 Texas Instruments Incorporated Three-level leadframe for no-lead packages
US7202154B2 (en) 2004-01-05 2007-04-10 International Business Machines Corporation Suspension for filling via holes in silicon and method for making the same
JP4069867B2 (ja) 2004-01-05 2008-04-02 セイコーエプソン株式会社 部材の接合方法
US20050249969A1 (en) 2004-05-04 2005-11-10 Enthone Inc. Preserving solderability and inhibiting whisker growth in tin surfaces of electronic components
US20050249968A1 (en) 2004-05-04 2005-11-10 Enthone Inc. Whisker inhibition in tin surfaces of electronic components
US20070163643A1 (en) 2004-02-19 2007-07-19 Nanosolar, Inc. High-throughput printing of chalcogen layer and the use of an inter-metallic material
US20070166453A1 (en) 2004-02-19 2007-07-19 Nanosolar, Inc. High-throughput printing of chalcogen layer
US7605328B2 (en) 2004-02-19 2009-10-20 Nanosolar, Inc. Photovoltaic thin-film cell produced from metallic blend using high-temperature printing
JP4449676B2 (ja) 2004-03-25 2010-04-14 住友金属鉱山株式会社 銅微粒子の製造方法
US20050218398A1 (en) 2004-04-06 2005-10-06 Availableip.Com NANO-electronics
US7019391B2 (en) 2004-04-06 2006-03-28 Bao Tran NANO IC packaging
US7129444B2 (en) 2004-05-17 2006-10-31 Exatec Llc High performance defrosters for transparent panels
US20050274480A1 (en) 2004-05-24 2005-12-15 Barsoum Michel W Reduction of spontaneous metal whisker formation
CN1972779A (zh) 2004-05-28 2007-05-30 P·凯金属公司 焊膏和方法
DE102004030930A1 (de) 2004-06-25 2006-02-23 Ormecon Gmbh Zinnbeschichtete Leiterplatten mit geringer Neigung zur Whiskerbildung
JP4535797B2 (ja) 2004-07-21 2010-09-01 ハリマ化成株式会社 金属微粒子焼結体型の薄膜導電体層の形成方法、該方法を応用した金属配線ならびに金属薄膜の形成方法
JP2006038999A (ja) 2004-07-23 2006-02-09 Sumitomo Electric Ind Ltd レーザ照射を用いた導電性回路形成方法と導電性回路
US7215014B2 (en) 2004-07-29 2007-05-08 Freescale Semiconductor, Inc. Solderable metal finish for integrated circuit package leads and method for forming
JP4292122B2 (ja) 2004-07-30 2009-07-08 タイコエレクトロニクスアンプ株式会社 電気コネクタ
WO2006110163A2 (en) 2004-08-20 2006-10-19 Yale University Epitaxial growth of aligned algainn nanowires by metal-organic chemical vapor deposition
WO2006030286A1 (en) 2004-09-14 2006-03-23 Cima Nano Tech Israel Ltd Ink jet printable compositions
US20080193667A1 (en) * 2004-08-23 2008-08-14 Arkady Garbar Ink Jet Printable Compositions
TW200610122A (en) 2004-09-14 2006-03-16 P Kay Metal Inc Soldering process
US20060068218A1 (en) 2004-09-28 2006-03-30 Hooghan Kultaransingh N Whisker-free lead frames
US20060091121A1 (en) 2004-10-06 2006-05-04 James Zanolli Method for reflowing a metal plating layer of a contact and contact formed thereby
US7242573B2 (en) 2004-10-19 2007-07-10 E. I. Du Pont De Nemours And Company Electroconductive paste composition
US20060096867A1 (en) 2004-11-10 2006-05-11 George Bokisa Tin alloy electroplating system
US7705069B2 (en) 2004-11-22 2010-04-27 Xerox Corporation Ink jet composition
US7820097B2 (en) 2004-11-24 2010-10-26 Ncc Nano, Llc Electrical, plating and catalytic uses of metal nanomaterial compositions
CN101263078B (zh) 2004-11-24 2012-12-26 奈米系统股份有限公司 适用于纳米线薄膜的接触掺杂和退火系统以及工艺
CN100577328C (zh) 2004-11-29 2010-01-06 大日本油墨化学工业株式会社 表面处理的含银粉末的制造方法、以及使用表面处理的含银粉末的银糊剂
US7732349B2 (en) * 2004-11-30 2010-06-08 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of insulating film and semiconductor device
JP4749133B2 (ja) * 2004-11-30 2011-08-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2006169592A (ja) 2004-12-16 2006-06-29 Sumitomo Electric Ind Ltd 金属微粒子分散液とそれを用いた配線およびその形成方法
JP2008527169A (ja) 2005-01-10 2008-07-24 イシウム リサーチ デベロップメント カンパニー オブ ザ ヘブリュー ユニバーシティー オブ イエルサレム 金属ナノ粒子の水系分散物
CN101378985A (zh) 2005-01-12 2009-03-04 纽约大学 利用全息光学镊子处理纳米导线的系统和方法
WO2006076613A2 (en) 2005-01-14 2006-07-20 Cabot Corporation Metal nanoparticle compositions
US7579224B2 (en) 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
JP5094019B2 (ja) 2005-01-21 2012-12-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
US20060183055A1 (en) 2005-02-15 2006-08-17 O'neill Mark L Method for defining a feature on a substrate
WO2006095611A1 (ja) 2005-03-11 2006-09-14 Toyo Ink Mfg. Co., Ltd. 導電性インキ、導電回路、及び非接触型メディア
US7749922B2 (en) 2005-05-05 2010-07-06 The Board Of Trustees Of The University Of Illinois Nanowire structures and electrical devices
JP4844805B2 (ja) 2005-05-20 2011-12-28 住友電気工業株式会社 金属被膜の形成方法
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
KR101423204B1 (ko) 2005-07-01 2014-07-25 내셔널 유니버시티 오브 싱가포르 전기 전도성 복합체
CN101243210A (zh) 2005-07-11 2008-08-13 技术公司 具有最小化锡晶须生长性能或特性的锡电沉积物
JP4978844B2 (ja) 2005-07-25 2012-07-18 住友金属鉱山株式会社 銅微粒子分散液及びその製造方法
KR101333012B1 (ko) 2005-08-12 2013-12-02 캄브리오스 테크놀로지즈 코포레이션 나노와이어 기반의 투명 도전체
JP4716819B2 (ja) * 2005-08-22 2011-07-06 新光電気工業株式会社 インターポーザの製造方法
KR100703014B1 (ko) * 2005-10-26 2007-04-06 삼성전자주식회사 실리콘 산화물 식각액 및 이를 이용한 반도체 소자의 제조 방법
US7637415B2 (en) 2005-10-31 2009-12-29 General Electric Company Methods and apparatus for assembling a printed circuit board
US20070105395A1 (en) 2005-11-04 2007-05-10 Edward Kinzel Laser functionalization and patterning of thick-film inks
US20070117475A1 (en) 2005-11-23 2007-05-24 Regents Of The University Of California Prevention of Sn whisker growth for high reliability electronic devices
US20070144305A1 (en) 2005-12-20 2007-06-28 Jablonski Gregory A Synthesis of Metallic Nanoparticle Dispersions
JP4408432B2 (ja) 2005-12-26 2010-02-03 東京エレクトロン株式会社 ダマシン配線の形成方法
KR100790863B1 (ko) 2005-12-28 2008-01-03 삼성전자주식회사 나노 와이어 제조 방법
JP4956997B2 (ja) 2006-01-05 2012-06-20 住友電気工業株式会社 フラットケーブル
WO2007082112A2 (en) 2006-01-06 2007-07-19 Faraday Technology, Inc. Tin and tin alloy electroplating method with controlled internal stress and grain size of the resulting deposit
CN100363437C (zh) 2006-01-06 2008-01-23 浙江大学 硅钛微粗糙结构亲水薄膜的制备方法
JP2007204632A (ja) 2006-02-02 2007-08-16 Fujifilm Corp インク組成物およびこれを用いる記録方法
JP4868892B2 (ja) 2006-03-02 2012-02-01 富士通株式会社 めっき処理方法
US20070275262A1 (en) 2006-05-23 2007-11-29 Dechao Lin Reducing formation of tin whiskers on a tin plating layer
US20070281136A1 (en) 2006-05-31 2007-12-06 Cabot Corporation Ink jet printed reflective features and processes and inks for making them
JP2007321215A (ja) 2006-06-02 2007-12-13 Nippon Shokubai Co Ltd 金属ナノ粒子分散体および金属被膜
US7745101B2 (en) * 2006-06-02 2010-06-29 Eastman Kodak Company Nanoparticle patterning process
US7604871B2 (en) 2006-06-07 2009-10-20 Honeywell International Inc. Electrical components including abrasive powder coatings for inhibiting tin whisker growth
US20070295530A1 (en) 2006-06-07 2007-12-27 Honeywell International, Inc. Coatings and methods for inhibiting tin whisker growth
US20070287022A1 (en) 2006-06-07 2007-12-13 Honeywell International, Inc. Intumescent paint coatings for inhibiting tin whisker growth and methods of making and using the same
US20070284700A1 (en) 2006-06-07 2007-12-13 Honeywell International, Inc. Coatings and methods for inhibiting tin whisker growth
KR101386215B1 (ko) 2006-06-07 2014-04-17 삼성디스플레이 주식회사 전도성 고분자 조성물 및 이를 채용한 유기 광전 소자
US20070287023A1 (en) 2006-06-07 2007-12-13 Honeywell International, Inc. Multi-phase coatings for inhibiting tin whisker growth and methods of making and using the same
KR100777662B1 (ko) 2006-06-14 2007-11-29 삼성전기주식회사 잉크젯용 전도성 잉크 조성물
JP5062721B2 (ja) 2006-06-27 2012-10-31 国立大学法人京都大学 ナノサイズワイヤーの製造方法
US7262603B1 (en) 2006-06-28 2007-08-28 Lenovo (Singapore) Pte. Ltd System and method for sensing the formation of tin whiskers
DE112007001811T5 (de) 2006-08-07 2009-06-10 Pliant Corporation, Schaumburg Folien, Systeme und Verfahren für einen Nachweis eines Manipulationsereignisses
US7879131B2 (en) 2006-08-15 2011-02-01 Applied Nanotech Holdings, Inc. Metal encapsulation
JP4250651B2 (ja) 2006-09-28 2009-04-08 株式会社東芝 粒子配列方法、及び、発光素子の製造方法
KR101082146B1 (ko) 2006-09-29 2011-11-09 주식회사 엘지화학 잉크젯 프린트용 잉크 및 상기 잉크에 사용되는 금속나노입자의 제조방법
US7622371B2 (en) 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
WO2008046058A2 (en) 2006-10-12 2008-04-17 Cambrios Technologies Corporation Nanowire-based transparent conductors and applications thereof
US7786024B2 (en) 2006-11-29 2010-08-31 Nanosys, Inc. Selective processing of semiconductor nanowires by polarized visible radiation
KR20080088712A (ko) 2007-03-30 2008-10-06 삼성전자주식회사 전도성 잉크 조성물 및 이를 이용한 전도성 패턴의 형성방법
KR101398821B1 (ko) 2007-03-30 2014-05-30 삼성디스플레이 주식회사 금속 나노 입자의 제조방법, 이를 포함하는 전도성 잉크조성물 및 이를 이용한 전도성 패턴의 형성방법
US10231344B2 (en) 2007-05-18 2019-03-12 Applied Nanotech Holdings, Inc. Metallic ink
US8143431B2 (en) 2007-06-05 2012-03-27 Air Products And Chemicals, Inc. Low temperature thermal conductive inks
JP2009016626A (ja) * 2007-07-06 2009-01-22 Panasonic Corp 半導体モジュール装置および半導体モジュール装置の製造方法ならびにフラットパネル型表示装置，プラズマディスプレイパネル
GB0717055D0 (en) * 2007-09-01 2007-10-17 Eastman Kodak Co An electronic device
JP2009097082A (ja) 2007-09-26 2009-05-07 Fujifilm Corp 金属ナノ粒子及びその製造方法、並びに水性分散物、プリント配線・電極の製造方法、及びプリント配線基板・デバイス
EP2045028A1 (en) 2007-09-26 2009-04-08 Fujifilm Corporation Metal nanoparticles, method for producing the same, aqueous dispersion, method for manufacturing printed wiring or electrode, and printed wiring board or device
US7976733B2 (en) 2007-11-30 2011-07-12 Xerox Corporation Air stable copper nanoparticle ink and applications therefor
US8506849B2 (en) 2008-03-05 2013-08-13 Applied Nanotech Holdings, Inc. Additives and modifiers for solvent- and water-based metallic conductive inks
US20090286383A1 (en) 2008-05-15 2009-11-19 Applied Nanotech Holdings, Inc. Treatment of whiskers
US20100000762A1 (en) 2008-07-02 2010-01-07 Applied Nanotech Holdings, Inc. Metallic pastes and inks
JP4983811B2 (ja) * 2009-01-09 2012-07-25 日立電線株式会社 導電性回路形成方法および導電回路装置
JP5740389B2 (ja) * 2009-03-27 2015-06-24 アプライド・ナノテック・ホールディングス・インコーポレーテッド 光焼結及び／またはレーザー焼結を強化するためのバッファ層
US8422197B2 (en) 2009-07-15 2013-04-16 Applied Nanotech Holdings, Inc. Applying optical energy to nanoparticles to produce a specified nanostructure

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5724727A (en) * 1996-08-12 1998-03-10 Motorola, Inc. Method of forming electronic component
US20040147113A1 (en) * 2003-01-17 2004-07-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing conductive layer and semiconductor device
US7384862B2 (en) * 2003-06-30 2008-06-10 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating semiconductor device and display device
US20060163744A1 (en) * 2005-01-14 2006-07-27 Cabot Corporation Printable electrical conductors
JP2007042725A (ja) * 2005-08-01 2007-02-15 Konica Minolta Holdings Inc 金属パターンの形成方法
US20080164557A1 (en) * 2007-01-08 2008-07-10 Samsung Electronics Co., Ltd. Semiconductor device and method of forming the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110536800A (zh) * 2017-04-20 2019-12-03 汉阳大学校产学协力团 光烧结粒子制备方法、光烧结靶制备方法及光烧结方法
CN110536800B (zh) * 2017-04-20 2022-03-15 汉阳大学校产学协力团 光烧结粒子制备方法、光烧结靶制备方法及光烧结方法
CN110421839A (zh) * 2019-07-26 2019-11-08 成都职业技术学院 基于3d打印的二极管及其打印方法
CN110421839B (zh) * 2019-07-26 2021-09-28 成都职业技术学院 基于3d打印的二极管及其打印方法

Also Published As

Publication number Publication date
KR20120013350A (ko) 2012-02-14
US20140057428A1 (en) 2014-02-27
JP5740389B2 (ja) 2015-06-24
CN102365713B (zh) 2015-11-25
US8647979B2 (en) 2014-02-11
WO2010111581A1 (en) 2010-09-30
TWI492303B (zh) 2015-07-11
JP2012522383A (ja) 2012-09-20
EP2412007B1 (en) 2020-07-22
EP2412007A4 (en) 2014-11-12
EP2412007A1 (en) 2012-02-01
KR101735710B1 (ko) 2017-05-15
US9131610B2 (en) 2015-09-08
US20120049384A1 (en) 2012-03-01
TW201106426A (en) 2011-02-16

Similar Documents

Publication Publication Date Title
CN102365713B (zh) 增强光和/或激光烧结的缓冲层
JP5418510B2 (ja) 評価用半導体チップ、評価システム及びそのリペア方法
JP2016530622A (ja) 電子的構成要素とパターン化ナノワイヤ透明伝導体との接合
ES2842213T3 (es) Métodos para transferir materiales eléctricamente conductores
JP2016105521A (ja) 半導体モジュールを製造するための方法およびシステム
WO2020090727A1 (ja) 電磁波シールドフィルム、シールドプリント配線板の製造方法、及び、シールドプリント配線板
US8523071B2 (en) Electronic assemblies and methods of forming electronic assemblies
US20060115927A1 (en) Attachment of flip chips to substrates
KR102187881B1 (ko) 마이크로 led 검사용 프로브 소켓 디바이스 제조 방법
JP2016525792A (ja) 印刷電子装置作製技術に基づいて印刷回路基板アセンブリを製造する方法及び印刷回路基板アセンブリ
US10717236B2 (en) Curing a heat-curable material in an embedded curing zone
US20140101935A1 (en) Method for manufacturing printed circuit board
JP6459565B2 (ja) 積層配線板
JP6997524B2 (ja) 配線パターンシートの製造方法
JP5850080B2 (ja) 落とし込み治具の製造方法、機能材料の高精度塗布乾燥方法、真空蒸着方法、及び高機能化基板の製造方法
Navratil et al. Nanoparticle based ink printed chip interconnections
KR102168698B1 (ko) 입체 형상의 메탈 기판에 다층 회로패턴을 형성하는 방법
KR20180072089A (ko) 도전성패턴 형성방법
TWI496255B (zh) 電子組件及其形成方法
JP2006310880A (ja) 半導体装置及びその製造方法、回路基板並びに電子機器
JP2013062283A (ja) 配線基板およびその製造方法
JP2005252310A (ja) 半導体装置及びその製造方法、回路基板並びに電子機器
JP2018139252A (ja) 配線基板及びその製造方法
TWM529178U (zh) 鏡頭模組的座體結構
JP2007173589A (ja) 導電ペーストの充填方法およびそれを用いた配線基板の製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: ISHIHARA CHEMICAL CO., LTD.

Free format text: FORMER OWNER: APPLIED NANOTECH HOLDINGS INC.

Effective date: 20120531

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20120531

Address after: Hyogo

Applicant after: ISHIHARA CHEMICAL Co.,Ltd.

Address before: Texas, USA

Applicant before: APPLIED NANOTECH HOLDINGS, Inc.

ASS Succession or assignment of patent right

Owner name: ISHIHARA CHEMICAL CO., LTD.

Effective date: 20120705

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20120705

Address after: Texas

Applicant after: APPLIED NANOTECH HOLDINGS, Inc.

Co-applicant after: ISHIHARA CHEMICAL Co.,Ltd.

Address before: Texas

Applicant before: APPLIED NANOTECH HOLDINGS, Inc.

C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20190221

Address after: Hyogo

Patentee after: ISHIHARA CHEMICAL Co.,Ltd.

Address before: Texas

Co-patentee before: ISHIHARA CHEMICAL Co.,Ltd.

Patentee before: APPLIED NANOTECH HOLDINGS, Inc.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20151125