CN102337587A - SiC单晶的生长方法和由该方法生长的SiC单晶 - Google Patents

SiC单晶的生长方法和由该方法生长的SiC单晶 Download PDF

Info

Publication number
CN102337587A
CN102337587A CN2011102726762A CN201110272676A CN102337587A CN 102337587 A CN102337587 A CN 102337587A CN 2011102726762 A CN2011102726762 A CN 2011102726762A CN 201110272676 A CN201110272676 A CN 201110272676A CN 102337587 A CN102337587 A CN 102337587A
Authority
CN
China
Prior art keywords
single crystal
sic single
growth
plane
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011102726762A
Other languages
English (en)
Chinese (zh)
Inventor
木本恒畅
盐见弘
齐藤广明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Toyota Motor Corp
Original Assignee
Sumitomo Electric Industries Ltd
Toyota Motor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd, Toyota Motor Corp filed Critical Sumitomo Electric Industries Ltd
Publication of CN102337587A publication Critical patent/CN102337587A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)
CN2011102726762A 2004-05-14 2005-05-13 SiC单晶的生长方法和由该方法生长的SiC单晶 Pending CN102337587A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004-145179 2004-05-14
JP2004145179A JP4694144B2 (ja) 2004-05-14 2004-05-14 ＳｉＣ単結晶の成長方法およびそれにより成長したＳｉＣ単結晶

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNA2005800150544A Division CN1950548A (zh) 2004-05-14 2005-05-13 SiC单晶的生长方法和由该方法生长的SiC单晶

Publications (1)

Publication Number Publication Date
CN102337587A true CN102337587A (zh) 2012-02-01

Family

ID=34968350

Family Applications (2)

Application Number Title Priority Date Filing Date
CN2011102726762A Pending CN102337587A (zh) 2004-05-14 2005-05-13 SiC单晶的生长方法和由该方法生长的SiC单晶
CNA2005800150544A Pending CN1950548A (zh) 2004-05-14 2005-05-13 SiC单晶的生长方法和由该方法生长的SiC单晶

Family Applications After (1)

Application Number Title Priority Date Filing Date
CNA2005800150544A Pending CN1950548A (zh) 2004-05-14 2005-05-13 SiC单晶的生长方法和由该方法生长的SiC单晶

Country Status (6)

Country Link
US (1) US20070221119A1 (https=)
EP (1) EP1751329B1 (https=)
JP (1) JP4694144B2 (https=)
CN (2) CN102337587A (https=)
DE (1) DE602005004280T2 (https=)
WO (1) WO2005111277A1 (https=)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006030565A1 (ja) * 2004-09-17 2006-03-23 Nippon Mining & Metals Co., Ltd. エピタキシャル結晶の成長方法
US8980445B2 (en) * 2006-07-06 2015-03-17 Cree, Inc. One hundred millimeter SiC crystal grown on off-axis seed
CN100514562C (zh) * 2006-09-18 2009-07-15 中国科学院半导体研究所 用于MEMS器件的大面积3C-SiC薄膜的制备方法
WO2009033076A1 (en) * 2007-09-05 2009-03-12 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Transparent nanocrystalline diamond contacts to wide bandgap semiconductor devices
JP4978637B2 (ja) 2009-02-12 2012-07-18 株式会社デンソー 炭化珪素単結晶の製造方法
DE102009033302B4 (de) * 2009-07-15 2012-01-26 Infineon Technologies Ag Herstellungsverfahren für ein unipolares Halbleiter-Bauelement und Halbleitervorrichtung
JP4959763B2 (ja) * 2009-08-28 2012-06-27 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びその製造方法
CA2759074A1 (en) 2010-02-05 2011-08-11 Taro Nishiguchi Method for manufacturing silicon carbide substrate
EP2610912A4 (en) * 2010-08-27 2014-10-22 Nat Univ Corp Nara Inst SIC SEMICONDUCTOR ELEMENT
JP2012109348A (ja) * 2010-11-16 2012-06-07 Sumitomo Electric Ind Ltd 炭化珪素半導体装置
WO2012090572A1 (ja) * 2010-12-27 2012-07-05 住友電気工業株式会社 炭化珪素基板、半導体装置、炭化珪素基板の製造方法、および半導体装置の製造方法
JP2014013850A (ja) * 2012-07-05 2014-01-23 Sumitomo Electric Ind Ltd 炭化珪素基板および半導体装置の製造方法、ならびに炭化珪素基板および半導体装置
US8860040B2 (en) 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
US9018639B2 (en) 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
US9017804B2 (en) 2013-02-05 2015-04-28 Dow Corning Corporation Method to reduce dislocations in SiC crystal growth
US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
CN105008598B (zh) * 2013-07-09 2018-01-19 富士电机株式会社 碳化硅半导体装置的制造方法以及碳化硅半导体装置
JP5854013B2 (ja) * 2013-09-13 2016-02-09 トヨタ自動車株式会社 ＳｉＣ単結晶の製造方法
JP5884804B2 (ja) * 2013-09-26 2016-03-15 株式会社デンソー 炭化珪素単結晶基板および炭化珪素単結晶エピタキシャルウェハ
WO2015129867A1 (ja) * 2014-02-28 2015-09-03 新日鐵住金株式会社 エピタキシャル炭化珪素ウエハの製造方法
JP6195426B2 (ja) 2014-04-18 2017-09-13 国立研究開発法人産業技術総合研究所 炭化珪素エピタキシャルウエハおよびその製造方法
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
JP6816710B2 (ja) 2015-10-13 2021-01-20 住友電気工業株式会社 半導体積層体
JP7002932B2 (ja) * 2017-12-22 2022-01-20 昭和電工株式会社 ＳｉＣインゴットの製造方法
JP2018067736A (ja) * 2018-01-16 2018-04-26 三菱電機株式会社 炭化珪素半導体装置及びその製造方法
JP7167881B2 (ja) * 2019-08-27 2022-11-09 株式会社デンソー 半導体装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1249521A1 (en) * 1999-12-22 2002-10-16 Sixon Inc. SiC SINGLE CRYSTAL AND METHOD FOR GROWING THE SAME

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5958132A (en) * 1991-04-18 1999-09-28 Nippon Steel Corporation SiC single crystal and method for growth thereof
JPH1017399A (ja) 1996-07-04 1998-01-20 Nippon Steel Corp ６Ｈ−ＳｉＣ単結晶の成長方法
DE60033829T2 (de) * 1999-09-07 2007-10-11 Sixon Inc. SiC-HALBLEITERSCHEIBE, SiC-HALBLEITERBAUELEMENT SOWIE HERSTELLUNGSVERFAHREN FÜR EINE SiC-HALBLEITERSCHEIBE
JP3750622B2 (ja) * 2002-03-22 2006-03-01 株式会社デンソー エピタキシャル膜付きＳｉＣウエハ及びその製造方法並びにＳｉＣ電子デバイス
EP1306890A2 (en) 2001-10-25 2003-05-02 Matsushita Electric Industrial Co., Ltd. Semiconductor substrate and device comprising SiC and method for fabricating the same
JP4160770B2 (ja) 2002-04-04 2008-10-08 新日本製鐵株式会社 ４ｈ型炭化珪素単結晶エピタキシャル基板
JP4157326B2 (ja) 2002-05-27 2008-10-01 新日本製鐵株式会社 ４ｈ型炭化珪素単結晶インゴット及びウエハ
JP4160769B2 (ja) 2002-04-04 2008-10-08 新日本製鐵株式会社 炭化珪素単結晶インゴット及びウエハ
KR100773624B1 (ko) 2002-04-04 2007-11-05 신닛뽄세이테쯔 카부시키카이샤 탄화 규소 단결정으로 이루어지는 종결정 및 그를 이용한잉곳의 제조 방법
JP2004099340A (ja) * 2002-09-05 2004-04-02 Nippon Steel Corp 炭化珪素単結晶育成用種結晶と炭化珪素単結晶インゴット及びその製造方法
JP2005029459A (ja) * 2003-06-16 2005-02-03 Showa Denko Kk 炭化珪素単結晶の成長方法、炭化珪素種結晶および炭化珪素単結晶

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1249521A1 (en) * 1999-12-22 2002-10-16 Sixon Inc. SiC SINGLE CRYSTAL AND METHOD FOR GROWING THE SAME

Also Published As

Publication number Publication date
DE602005004280T2 (de) 2009-01-29
JP2005324994A (ja) 2005-11-24
WO2005111277A1 (en) 2005-11-24
EP1751329B1 (en) 2008-01-09
CN1950548A (zh) 2007-04-18
US20070221119A1 (en) 2007-09-27
JP4694144B2 (ja) 2011-06-08
DE602005004280D1 (de) 2008-02-21
EP1751329A1 (en) 2007-02-14

Similar Documents

Publication Publication Date Title
CN102337587A (zh) SiC单晶的生长方法和由该方法生长的SiC单晶
CN102301043B (zh) 外延碳化硅单晶基板及其制造方法
CN100472002C (zh) 减少碳化硅外延中的胡萝卜缺陷
KR100984261B1 (ko) SiC 결정의 제조 방법 및 SiC 결정
JP4646752B2 (ja) 高配向ダイヤモンド膜及びその製造方法並びに高配向ダイヤモンド膜を備えた電子デバイス
Kong et al. Growth rate, surface morphology, and defect microstructures of β–SiC films chemically vapor deposited on 6H–SiC substrates
US8591651B2 (en) Epitaxial growth on low degree off-axis silicon carbide substrates and semiconductor devices made thereby
KR102201924B1 (ko) 도펀트 활성화 기술을 이용한 전력반도체용 갈륨옥사이드 박막 제조 방법
CN104704150B (zh) 碳化硅单晶基板及其制法
TW201202490A (en) Method for producing single crystal 3C-SiC substrate and single crystal 3C-SiC substrate produced by the same
CN103562149A (zh) 用于金属-非金属化合物的表面活性剂晶体生长的方法
JP3750622B2 (ja) エピタキシャル膜付きＳｉＣウエハ及びその製造方法並びにＳｉＣ電子デバイス
JP3776374B2 (ja) ＳｉＣ単結晶の製造方法，並びにエピタキシャル膜付きＳｉＣウエハの製造方法
JP2009543946A (ja) ワイドバンドギャップ半導体材料
JP4733882B2 (ja) 炭化珪素単結晶及びその製造方法並びに炭化珪素単結晶育成用炭化珪素結晶原料
JP4664464B2 (ja) モザイク性の小さな炭化珪素単結晶ウエハ
KR20200103578A (ko) 도펀트 활성화 기술을 이용한 전력반도체용 갈륨옥사이드 박막 제조 방법
JP4954593B2 (ja) エピタキシャル炭化珪素単結晶基板の製造方法、及び得られたエピタキシャル炭化珪素単結晶基板を用いてなるデバイス
CN117940621A (zh) 异质外延晶圆的制造方法
TWI404122B (zh) 增進半-極性（Ａｌ，Ｉｎ，Ｇａ，Ｂ）Ｎ藉由金屬有機化學氣相沈積生長之方法
JP3628079B2 (ja) 炭化珪素薄膜製造方法並びに炭化珪素薄膜および積層基板
JP2002255692A (ja) 炭化珪素エピタキシャル基板およびその製造方法
JP4160770B2 (ja) ４ｈ型炭化珪素単結晶エピタキシャル基板
JP5152293B2 (ja) モザイク性の小さな炭化珪素単結晶ウエハの製造方法
JP2011520742A (ja) 高純度６Ｈ−ＳｉＣ単結晶の成長のための方法および装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20120201