CN102214701A - 氮化物半导体元件 - Google Patents

氮化物半导体元件 Download PDF

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Publication number
CN102214701A
CN102214701A CN2011100420786A CN201110042078A CN102214701A CN 102214701 A CN102214701 A CN 102214701A CN 2011100420786 A CN2011100420786 A CN 2011100420786A CN 201110042078 A CN201110042078 A CN 201110042078A CN 102214701 A CN102214701 A CN 102214701A
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CN
China
Prior art keywords
layer
nitride semiconductor
substrate
lattice constant
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011100420786A
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English (en)
Chinese (zh)
Inventor
清水顺
好田慎一
山田康博
胁田尚英
石田昌宏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of CN102214701A publication Critical patent/CN102214701A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3251—Layer structure consisting of three or more layers
    • H10P14/3252—Alternating layers, e.g. superlattice
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Junction Field-Effect Transistors (AREA)
CN2011100420786A 2010-04-08 2011-02-17 氮化物半导体元件 Pending CN102214701A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010089842A JP5689245B2 (ja) 2010-04-08 2010-04-08 窒化物半導体素子
JP2010-089842 2010-04-08

Publications (1)

Publication Number Publication Date
CN102214701A true CN102214701A (zh) 2011-10-12

Family

ID=44745926

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011100420786A Pending CN102214701A (zh) 2010-04-08 2011-02-17 氮化物半导体元件

Country Status (3)

Country Link
US (1) US8405067B2 (https=)
JP (1) JP5689245B2 (https=)
CN (1) CN102214701A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110024083A (zh) * 2016-11-30 2019-07-16 住友化学株式会社 半导体衬底
CN115084293A (zh) * 2022-05-11 2022-09-20 中山大学 一种异质结光电探测器

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2011135963A1 (ja) * 2010-04-28 2013-07-18 日本碍子株式会社 エピタキシャル基板およびエピタキシャル基板の製造方法
KR20120027988A (ko) * 2010-09-14 2012-03-22 삼성엘이디 주식회사 질화갈륨계 반도체소자 및 그 제조방법
US9312436B2 (en) * 2011-05-16 2016-04-12 Kabushiki Kaisha Toshiba Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer
JP5228122B1 (ja) 2012-03-08 2013-07-03 株式会社東芝 窒化物半導体素子及び窒化物半導体ウェーハ
JP6165884B2 (ja) 2013-01-31 2017-07-19 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ 半導体積層体および半導体積層体の製造方法
JP2015192004A (ja) * 2014-03-28 2015-11-02 国立大学法人 名古屋工業大学 ドレイン電流密度・相互コンダクタンスを大幅に改善したリセス構造のｍｉｓ型ノーマリオフｈｅｍｔ素子

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005158846A (ja) * 2003-11-21 2005-06-16 Sanken Electric Co Ltd 半導体素子形成用板状基体及びその製造方法
JP2006135241A (ja) * 2004-11-09 2006-05-25 Sanken Electric Co Ltd 半導体装置
JP2007088426A (ja) * 2005-08-25 2007-04-05 Furukawa Electric Co Ltd:The 半導体電子デバイス
JP2007250721A (ja) * 2006-03-15 2007-09-27 Matsushita Electric Ind Co Ltd 窒化物半導体電界効果トランジスタ構造
JP2009158804A (ja) * 2007-12-27 2009-07-16 Dowa Electronics Materials Co Ltd 半導体材料、半導体材料の製造方法及び半導体素子

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3778765B2 (ja) 2000-03-24 2006-05-24 三洋電機株式会社 窒化物系半導体素子およびその製造方法
JP4554803B2 (ja) * 2000-12-04 2010-09-29 独立行政法人理化学研究所 低転位バッファーおよびその製造方法ならびに低転位バッファーを備えた素子
US7115896B2 (en) 2002-12-04 2006-10-03 Emcore Corporation Semiconductor structures for gallium nitride-based devices
JP4897956B2 (ja) * 2006-12-20 2012-03-14 古河電気工業株式会社 半導体電子デバイス
JP5224311B2 (ja) * 2007-01-05 2013-07-03 古河電気工業株式会社 半導体電子デバイス
JP5309452B2 (ja) 2007-02-28 2013-10-09 サンケン電気株式会社 半導体ウエーハ及び半導体素子及び製造方法
JP2009010142A (ja) * 2007-06-27 2009-01-15 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体で構成されたｈｆｅｔおよびその製造方法
US8067787B2 (en) 2008-02-07 2011-11-29 The Furukawa Electric Co., Ltd Semiconductor electronic device
JP5053220B2 (ja) * 2008-09-30 2012-10-17 古河電気工業株式会社 半導体電子デバイスおよび半導体電子デバイスの製造方法
EP2498282A4 (en) * 2009-11-04 2014-06-25 Dowa Electronics Materials Co Ltd EPITACTIC COATED GROUP III NITRIDE SUBSTRATE

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005158846A (ja) * 2003-11-21 2005-06-16 Sanken Electric Co Ltd 半導体素子形成用板状基体及びその製造方法
JP2006135241A (ja) * 2004-11-09 2006-05-25 Sanken Electric Co Ltd 半導体装置
JP2007088426A (ja) * 2005-08-25 2007-04-05 Furukawa Electric Co Ltd:The 半導体電子デバイス
JP2007250721A (ja) * 2006-03-15 2007-09-27 Matsushita Electric Ind Co Ltd 窒化物半導体電界効果トランジスタ構造
JP2009158804A (ja) * 2007-12-27 2009-07-16 Dowa Electronics Materials Co Ltd 半導体材料、半導体材料の製造方法及び半導体素子

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110024083A (zh) * 2016-11-30 2019-07-16 住友化学株式会社 半导体衬底
CN115084293A (zh) * 2022-05-11 2022-09-20 中山大学 一种异质结光电探测器

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US8405067B2 (en) 2013-03-26
JP2011222722A (ja) 2011-11-04
US20110248241A1 (en) 2011-10-13
JP5689245B2 (ja) 2015-03-25

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Application publication date: 20111012